JP2001168278A - Power semiconductor module and power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor module where the conversion work of a module is facilitated, the inductance of a main circuit is reduced and the temperature rise of a conductor can be suppressed. SOLUTION: In the power semiconductor module, an envelope is constituted of a base 7 and an insulating package 3, a semiconductor chip is stored in the envelope and plural main terminals, a collector terminal 4 or a cathode terminal, an emitter terminal or an anode terminal 5, for example, are installed on the package 3. Both main terminals 4 and 5 are protruded outside the package 3 in a state of being arranged in parallel to the base 7 and through holes 4h and 5h for a conductor fitting bolt 12, which are formed on the main terminals, are positioned outside the envelope.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module in which a switching element such as an insulated gate bipolar transistor (IGBT) and a diode element are housed in an insulating package, and a power converter using the same. .

[0002]

2. Description of the Related Art A power conversion device for converting power with high performance and high efficiency uses a power semiconductor module in which a switching element such as an IGBT capable of high-speed switching is housed in a package. In these power converters, there is a need to increase the capacity and the performance as well as reduce the size and improve the reliability. Therefore, various module configurations, circuit configurations, and conversion device configurations are used. About the configuration of the conventional power semiconductor module and the converter,
This will be described with reference to FIGS.

FIG. 11 shows one phase of a neutral point clamp type three-level inverter circuit. This inverter circuit is configured using four IGBT modules 1a, 1b, 1c, 1d constituting a main circuit and two diode modules 2a, 2b for neutral point clamping. The IGBT module usually has a plurality of IGBT chips built-in, and these IGBT chips are internally connected in parallel to increase the current. At the same time, a plurality of freewheeling diode chips are built in and connected in antiparallel to each IGBT chip. Similarly, the diode module also includes a plurality of diode chips and is internally connected in parallel.

[0004] IGBT chips and diode chips are:
There is a limit to the voltage and current ratings per chip. To configure a large-capacity device, a large number of chips are connected in parallel to form a module with a large current rating, or a chip with a high withstand voltage is used for voltage rating. Or a large module.

FIG. 12 is a view showing the appearance of the IGBT module. An envelope is formed by the base 7 and the insulating package 3, and an IGBT chip and a diode chip are housed therein. The IGBT module is mounted in a state where the base 7 is mounted on an insulating substrate (not shown) by mounting bolts passing through the mounting holes 8. The insulating substrate of each chip is manufactured using a material with high thermal conductivity,
The heat generated from the BT chip and the diode chip is conducted to the base 7. The package 3 has a collector terminal 4
An emitter terminal 5 and a gate terminal 6 are provided;
Wiring members necessary for the circuit configuration can be connected. Here, two collector terminals 4 and two emitter terminals 5 are provided.

Although the diode module is not shown, it has substantially the same configuration as the IGBT module, and the collector terminal 4 of the IGBT chip is used as a cathode terminal and the emitter terminal 5 is used as an anode terminal. Is equivalent to However, the gate terminal 6 does not exist.

FIG. 13 shows a structural example of one phase of a three-level inverter circuit using the IGBT module shown in FIG. 12 and a diode module (not shown). The IGBT modules 1a, 1b, 1c, 1d and the diode modules 2a, 2b are mounted on the cooler 9. As exemplified in the IGBT module 1d, each module is fixed to the cooler 9 by module mounting bolts 11 passed through mounting holes 8 provided in the base 7. Although a predetermined number of screw holes are formed in the cooler 9, they are not shown.

The conductors 10a, 10b, 10c, 10 necessary for forming a three-level inverter circuit are connected to the collector terminal and the emitter terminal of the IGBT module and the cathode terminal and the anode terminal of the diode module.
d, 10e and 10f are connected. Similarly, as illustrated in the portion of the IGBT module 1d, each conductor is mechanically fixed to each terminal by the conductor mounting bolt 12 and is electrically connected. Note that screw holes are also formed in terminal portions of each module. IGBT modules 1a, 1b, 1
A gate circuit board (not shown) is connected to the gate terminals c and 1d via a wiring material such as a covered electric wire, thereby supplying a gate driving signal.

FIG. 14 shows six IGBT modules 1
1 shows a three-phase inverter circuit configured using a, 1b, 1c, 1d, 1e, and 1f. FIG.
1 shows a single-phase inverter circuit configured using IGBT modules 1a, 1b, 1d, and 1e.
FIG. 16 shows the three-phase inverter circuit shown in FIG.
Alternatively, FIG. 16 shows one phase of the single-phase inverter circuit shown in FIG. One phase of the inverter circuit shown here has three phases in each of the positive arm and the negative arm.
IGBT modules 1a, 1b, 1c to 1d,
1e and 1f are connected in parallel. In any case, the neutral point clamping method 3 in FIG.
A circuit configuration similar to that of the level inverter circuit is used.

[0010]

The structure of a conventional power semiconductor module and a conventional power converter will be discussed with reference to FIGS.

(1) In FIG. 13, conductors interconnecting the IGBT modules 1a to 1d and the diode modules 2a and 2b are arranged so as to partially cover the package 3 (FIG. 12). Therefore, when the module needs to be replaced due to a failure or the like, it is necessary to first remove the conductor that covers the module. For example, when replacing IGBTld, conductor 1
It is necessary to remove 0d and 10e. After the replacement of the module, the operation for mounting the conductors 10d and 10e is required. Therefore, it takes a considerable time to replace the module, and it is difficult to perform maintenance work in a short time.

(2) Since some conductors are arranged at positions covering the module mounting bolts 11, it is difficult to retighten the module mounting bolts 11 after connecting the conductors. For this reason, when retightening the module mounting bolts 11, it is necessary to remove some conductors, and similarly, it becomes difficult to perform maintenance work in a short time.

(3) Since each conductor is held by the terminal portion of the module, an external force is applied to the terminal due to its own weight or vibration received from the outside, and a stress is applied to the terminal itself or a joint inside the module. This has an undesirable effect on module reliability.

(4) The temperature rises due to the heat generated from each conductor, and raises the temperature of the insulating package 3 of the module and the snubber circuit capacitor (not shown) disposed in the immediate vicinity of the module. As a result, there is an undesirable effect on the long-term reliability of each member.

(5) Due to the interconnection of a plurality of modules, the length of each conductor becomes longer, and accordingly the wiring inductance of the main circuit increases. As a result, the surge voltage generated in accordance with the inductance increases, and it becomes necessary to derate the surge voltage and supply the current. Conversely, when configuring a device having a predetermined capacity, it is necessary to increase the module rating, so that the device becomes larger.

(6) Since each module is disposed at a position where the conductor partially covers the package, a substrate for supplying a gate signal cannot be disposed immediately adjacent to each module. Therefore, the gate circuit board is arranged at a position distant from each module, and is connected to the gate terminal 6 (FIG. 12) via a wiring material such as a covered electric wire. As a result, the wiring impedance of the gate circuit increases, and high-speed switching becomes difficult.

Accordingly, it is an object of the present invention to facilitate replacement of a module, reduce inductance of a main circuit,
An object of the present invention is to suppress an increase in the temperature of the conductor and reduce the impedance of the gate wiring, thereby achieving an improvement in the maintainability, miniaturization, high performance, and reliability of the device.

[0018]

In order to achieve the above object, the invention according to claim 1 includes a semiconductor chip in an envelope formed by a base and an insulating package disposed thereon. In a power semiconductor module in which a plurality of main terminals are housed and arranged on a package, a plurality of main terminals are respectively arranged in parallel with a base and protrude outside the package, and a conductor mounting formed on each main terminal is provided. The through hole for the bolt is located outside the package when viewed from the axial direction of the bolt.

According to a second aspect of the present invention, in the power semiconductor module according to the first aspect, a control terminal board is disposed on the package.

According to a third aspect of the present invention, in the power semiconductor module according to the first aspect, each of the main terminals is insulated from each other and then led out in a laminated structure.

According to a fourth aspect of the present invention, in the power semiconductor module according to the first aspect, module mounting bolts are incorporated in the package.

According to a fifth aspect of the present invention, in the power semiconductor module according to the first aspect, a conductor mounting bolt is incorporated in each terminal.

According to a sixth aspect of the present invention, in a power conversion device in which a neutral point clamp type three-level inverter circuit is constituted by a plurality of switching modules and a plurality of diode modules, each switching module and each diode module are respectively based. And an insulated package placed on top of the package, and the main terminals placed on the package are placed outside of the package in parallel with the base. Protruding and positioning the through holes for conductor mounting bolts formed in each terminal outside the package when viewed from the axial direction of the bolts,
Each switching module and each diode module are arranged on a common cooler, and the terminals of each module are led out to the side of the cooler through a plurality of conductors stacked via an insulating sheet.

According to a seventh aspect of the present invention, there is provided a power converter in which an inverter circuit is constituted by a plurality of switching modules, wherein each of the switching modules comprises a base and an insulating package disposed thereon. And a plurality of main terminals arranged on the package are projected out of the package in a state where they are arranged in parallel with the base, and through holes for conductor mounting bolts formed in each main terminal Is located outside the package when viewed from the axial direction of the bolts, a plurality of switching modules are arranged on a common cooler, and the terminals of each module are cooled through a plurality of conductors stacked via an insulating sheet. It is characterized by being led out to the side of the vessel.

According to an eighth aspect of the present invention, in the power converter according to the seventh aspect, each switching module constituting one phase of the inverter circuit is disposed on a common cooler.

According to a ninth aspect of the present invention, in the power converter according to the sixth or seventh aspect, the insulating sheet is constituted by a heat conductive insulating sheet.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS <First Embodiment> A first embodiment of the present invention will be described with reference to FIG. In the power semiconductor module shown in FIG. 1, a semiconductor chip is housed in an envelope composed of a base 7 and an insulating package 3 disposed thereon, and a plurality of main terminals are placed on the package 3. That is, with the collector terminal 4 and the emitter terminal 5 being parallel to the base 7 respectively,
And through holes 4h and 5h for conductor mounting bolts formed in the main terminals 4 and 5 are positioned outside the package 3 when viewed from the axial direction of the bolts. Each main terminal 4,
5 is positioned so as not to interfere with the mounting hole 8 provided in the base 7. The main terminals 4 and 5 are provided on the package 3.
A control terminal, that is, a gate terminal 6 is also provided on the opposite side.

According to this embodiment, when replacing a module of a power converter constructed using this module, the module can be replaced without removing the conductor as described later, so that the time required for the operation is reduced. It can be shortened and maintainability can be improved.

<Embodiment 2> Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 2 shows FIG.
The four IGBT modules 1a, 1b, 1c, 1d and two diode modules 2a, 2b constituting one phase in the neutral point clamp type three-level inverter shown in FIG. This is an example of the arrangement. Each IGBT module has the structure shown in FIG. Diodes 2a and 2b are externally similar to the IGBT of FIG. 1, but have a form in which the control terminal, that is, the gate terminal is omitted. Each I
The GBT module and the diode are arranged such that the main terminals 4, 5 of the positive modules 1a, 1b, 2a and the main terminals 4, 5 of the negative modules 1c, 1d, 2b face each other when viewed from the DC power supply side of the inverter. Is done. On the cooler 9, six terminal lead-out conductors 10 for external terminals are provided at opposing portions of the positive module and the negative module where each main terminal is located.
a, 10b, 10c, 10d, 10e, and 10f are respectively fixed in a laminated state via an insulating plate (not shown), the uppermost conductor is short, and the lowermost conductor is fixed so that the terminal portion of each conductor is exposed. It is long and formed in steps. Using these conductors, mutual connection between the modules is also performed. In the case shown, the lowermost conductor 10c is composed of the modules 1b and 1c.
The conductor 10d is similarly used for the interconnection of the modules 1a, 1b, 2a and, if necessary, for the external terminals, and the conductor 10b is used for the modules 1c, 1d, The conductor 10e is used for the DC negative terminal N derived from the module 1d, and the conductor 10a is used for the DC positive terminal P derived from the module 1a. Finally, the conductor 10f is used for interconnection of the modules 2a and 2b and for the neutral terminal C.

As exemplified in the diode module 2b, each module is fixed to the cooler 9 by mounting bolts 11 through mounting holes 8 formed in the respective bases 7, and each terminal of the module is illustrated by a conductor mounting bolt 12. A screw hole (not shown) is screwed into a screw hole of each conductor to form a mechanical connection and an electrical connection. Here, the state where the conductor mounting bolt 12 connects the anode terminal 5 of the diode module 2b and the conductor 10d is shown.

According to such a configuration, each module and each conductor have a positional relationship such that they do not interfere with each other, and the conductor is fixed to the cooler 9. Therefore, when replacing each module, the conductor is not removed. The time required for the replacement operation can be reduced, and the maintainability can be improved. Since each conductor is installed so as not to overlap with the position of the module mounting bolt 11, it is easy to retighten the module mounting bolt 11 even after the conductor is mounted, and the maintainability is similarly improved.

Further, since each conductor is fixed to the cooler 9, no external force is applied to each terminal due to the weight of the conductor, and the influence of vibration is reduced. And the reliability of the device is improved.

Further, the wiring length of each conductor is shortened and the conductors can be arranged close to each other because they are laminated via an insulating plate, so that the wiring inductance of the conductor portion can be reduced. As a result, the surge voltage generated in proportion to the inductance decreases, and when a device having a predetermined capacity is configured, the module rating can be reduced and the device can be downsized.

<Embodiment 3> Next, a third embodiment of the present invention will be described with reference to FIG. FIG.
6 IGBT modules 1a, 1b,
The three-phase inverter circuit shown in FIG. 14 is configured on the cooler 9 using 1c, 1d, 1e, and 1f. In this inverter circuit, as can be seen from FIG. 14, a total of five terminal conductors, that is, two DC terminals P and N
And three AC terminals U, V, W are conductors 10a to 10a, respectively.
10e. Module 1a, 1
The DC positive terminal P is led out by the conductor 10c that commonly connects the collectors of the modules 1d, 1e, and 1f.
A negative DC terminal N is derived by a conductor 10e commonly connecting the emitters of the above, an AC terminal U is derived by a conductor 10b commonly connecting the modules 1a and 1d, and an AC terminal V is derived by a conductor 10a commonly connecting the modules 1b and 1e. The AC terminal W is led out by a conductor 10d that is led out and commonly connects the modules 1c and 1f. Even in such a configuration, the same effect as the embodiment shown in FIG. 2 can be obtained.

<Fourth Embodiment> FIG. 4 shows a fourth embodiment of the present invention. In this embodiment, four IGBT modules 1a, 1b, 1 having the configuration shown in FIG.
The single-phase inverter circuit shown in FIG. 15 is configured on the cooler 9 using d and 1e. In this inverter circuit, as can be seen from FIG. 15, a total of four terminal conductors,
That is, two DC terminals P and N and two AC terminals U and
V is derived by conductors 10a to 10d, respectively.
Conductor 1 for connecting collectors of modules 1a and 1b in common
0a derives the DC positive terminal P, and the module 1
A DC negative terminal N is led out by a conductor 10d commonly connecting the emitters of d and 1e, an AC terminal U is led out by a conductor 10b commonly connecting the modules 1a and 1d, and an AC terminal U is drawn out by a conductor 10c commonly connecting the modules 1b and 1e. Terminal V is derived. Even in such a configuration,
The same effect as the embodiment shown in FIG. 2 can be obtained.

<Fifth Embodiment> FIG. 5 shows a fifth embodiment of the present invention. In this embodiment, six IGBT modules 1a, 1b, 1 having the configuration shown in FIG.
As shown in FIG. 16, one phase of a three-phase inverter circuit or one phase of a single-phase inverter circuit is configured on the cooler 9 using c, 1d, 1e, and 1f. The three modules 1a, 1b, 1c connected in parallel serve as the positive arm, and the three modules 1d, 1e, 1f connected in parallel.
Constitutes the negative arm. Modules 1a, 1b,
A DC positive terminal P is led out by a conductor 10a commonly connecting the collectors of the modules 1d, 1c, and 1c, and a DC negative terminal N is connected by a conductor 10c commonly connecting the emitters of the modules 1d, 1e and 1f.
Are derived, the common connection point of the modules 1a and 1b, the common connection point of the modules 1b and 1e, and the module 1c,
An AC terminal AC is led out by a conductor 10b that connects the common connection points 1f and connects the common connection points to each other. Even in such a configuration, the same effect as the embodiment shown in FIG. 2 can be obtained.

<Sixth Embodiment> FIG. 6 shows a sixth embodiment of the present invention. FIG. 6 is a partial side view of the cooler 9 and the conductors 10a to 10f shown in FIG. In FIG. 6, a cooler 9 and conductors 10a, 10b, 10c, 1
This shows a state in which a heat conductive insulating sheet 13 is interposed between 0d, 10e, and 10f to electrically insulate the phases. According to this configuration, heat generated from each conductor is efficiently transmitted to the cooler 9 via the heat conductive insulating sheet 13 and is cooled together with each module, so that a rise in the temperature of each conductor can be suppressed. . As a result, the temperature rise of the module insulation package 3 and the snubber circuit capacitor (not shown) disposed in the immediate vicinity of the module can be suppressed, so that the long-term reliability of those members can be improved. it can.

<Seventh Embodiment> Next, a seventh embodiment of the present invention will be described with reference to FIG. In the present embodiment, in the power semiconductor module shown in FIG.
Is arranged. The connection terminal 15 provided on the gate circuit board 14 is directly connected to the gate terminal 6 of the module without using a wiring material such as a covered electric wire. According to such a configuration, the gate circuit board 14 can be installed in the immediate vicinity of the package 3 and is connected without the intermediary of the wiring member.
Wiring impedance of the gate circuit can be reduced, and high-speed switching can be performed.

<Eighth Embodiment> FIG. 8 shows an eighth embodiment of the present invention. In this embodiment, the collector terminal 4 and the emitter terminal 5 are laminated and arranged insulated from each other in the power semiconductor module of FIG. The holes 4h and 5h through which the conductor mounting bolts 12 pass are positioned so as not to interfere with the mounting holes 8 of the base 7. According to such a configuration, the inductance of the collector terminal 4 and the emitter terminal 5 can be reduced, and the circuit inductance at the time of configuring the device can be further reduced.

<Ninth Embodiment> Next, a ninth embodiment of the present invention will be described with reference to FIG. In this embodiment, in the power semiconductor module shown in FIG. According to this configuration, since the module mounting bolt 11 is attached to the package 3 when the module mounting bolt 11 is loosened, the module and the module mounting bolt 11 can be handled as one component.
Therefore, the workability of module replacement is improved, and the work time required for maintenance can be further reduced.

<Embodiment 10> FIG. 10 shows a first embodiment of the present invention.
0 shows an embodiment. In this embodiment,
In the power semiconductor module of FIG. 1, conductor mounting bolts 12 are previously incorporated in the collector terminal 4 and the emitter terminal 5, respectively. According to this configuration, even when the conductor mounting bolt 12 is loosened, the conductor mounting bolt 12 does not completely come off from the collector terminal 4 and the emitter terminal 5, and the module and the conductor mounting bolt 12 can be handled as one component. it can. Therefore, the workability of module replacement is improved, and the work time required for maintenance can be further reduced.

[0042]

As described above, according to the present invention,
It facilitates module replacement work, reduces the inductance of the main circuit, and suppresses the temperature rise of the conductor.
As a result, it is possible to improve the maintainability, downsizing, high performance, and reliability of the apparatus.

[Brief description of the drawings]

FIG. 1 is a perspective view of a power semiconductor module according to a first embodiment of the present invention.

FIG. 2 is an exploded perspective view of a power converter according to a second embodiment of the present invention.

FIG. 3 is an exploded perspective view of a power converter according to a third embodiment of the present invention.

FIG. 4 is an exploded perspective view of a power converter according to a fourth embodiment of the present invention.

FIG. 5 is an exploded perspective view of a power converter according to a fifth embodiment of the present invention.

FIG. 6 is a sectional view of a cooler and a terminal connection conductor according to a sixth embodiment of the present invention.

FIG. 7 is an exploded perspective view of a power semiconductor module according to a seventh embodiment of the present invention.

FIG. 8 is a perspective view of a power semiconductor module according to an eighth embodiment of the present invention.

FIG. 9 is a perspective view of a power semiconductor module according to a ninth embodiment of the present invention.

FIG. 10 is a perspective view of a power semiconductor module according to a tenth embodiment of the present invention.

FIG. 11 is a circuit connection diagram of a known neutral point clamp type three-level inverter.

FIG. 12 is a perspective view of a conventional IGBT module.

FIG. 13 is an exploded perspective view for explaining an arrangement state of terminal connection conductors of a conventional three-level inverter.

FIG. 14 is a connection diagram of a known three-phase inverter circuit.

FIG. 15 is a connection diagram of a known single-phase inverter circuit.

FIG. 16 is a connection diagram showing one phase of a known three-phase inverter circuit.

[Explanation of symbols]

 1a to 1f IGBT module 2a, 2b Diode module 3 Package 4 Main terminal (collector terminal or cathode terminal) 5 Main terminal (emitter terminal or anode terminal) 6 Control terminal (gate terminal) 7 Base 8 Mounting hole 9 Cooler 10a -10f Terminal connection conductor 11 Module mounting bolt 12 Conductor mounting bolt 13 Thermal conductive insulating sheet 14 Gate circuit board

Claims (9)

[Claims] 1. A semiconductor chip is housed in an envelope composed of a base and an insulating package disposed thereon.
In a power semiconductor module having a plurality of main terminals disposed on the package, a conductor formed on each of the main terminals is projected out of the package in a state where the plurality of main terminals are respectively arranged in parallel with the base. A power semiconductor module, wherein a through hole for a mounting bolt is located outside the package when viewed from the axial direction of the bolt. 2. The power semiconductor module according to claim 1, wherein a control terminal board is arranged on said package. 3. The power semiconductor module according to claim 1, wherein each of said main terminals is insulated from each other and formed in a laminated structure. 4. The power semiconductor module according to claim 1, wherein module mounting bolts are incorporated in said package. 5. The power semiconductor module according to claim 1, wherein conductor mounting bolts are incorporated in each terminal. 6. In a power converter in which a neutral point clamp type three-level inverter circuit is constituted by a plurality of switching modules and a plurality of diode modules, each switching module and each diode module are respectively arranged on a base and on the base. Individually housed in an envelope constituted by an insulated package, and a plurality of main terminals arranged on the package are projected outside of the package in a state of being arranged in parallel with the base, respectively. A through hole for a conductor mounting bolt formed in each terminal is located outside the package when viewed from the axial direction of the bolt, and each switching module and each diode module are arranged on a common cooler. Was led out to the side of the cooler through a plurality of conductors stacked via an insulating sheet. Power converter according to claim. 7. In a power converter in which an inverter circuit is constituted by a plurality of switching modules, each switching module is individually accommodated in an envelope constituted by a base and an insulating package disposed thereon. Then, a plurality of main terminals provided on the package are projected outside of the package in a state where each of the plurality of main terminals is arranged in parallel with the base, and a through hole for a conductor mounting bolt formed in each main terminal is provided for the bolt. A plurality of switching modules are arranged on a common cooler when viewed from the axial direction and a plurality of switching modules are arranged on a common cooler, and the terminals of each module are connected via a plurality of conductors stacked via an insulating sheet. A power conversion device, wherein the power conversion device is led out to a side of the power conversion device. 8. The power converter according to claim 7,
A power converter, wherein each switching module constituting one phase of the inverter circuit is disposed on a common cooler. 9. The power converter according to claim 6, wherein the insulating sheet is formed of a heat conductive insulating sheet.