JP2001160648A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JP2001160648A JP2001160648A JP2000287712A JP2000287712A JP2001160648A JP 2001160648 A JP2001160648 A JP 2001160648A JP 2000287712 A JP2000287712 A JP 2000287712A JP 2000287712 A JP2000287712 A JP 2000287712A JP 2001160648 A JP2001160648 A JP 2001160648A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser chip
- base substrate
- laser device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高出力で長期信頼
性の高い半導体レーザ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device having high output and high long-term reliability.
【０００２】[0002]
【従来の技術】半導体レーザ装置を組み立てる途中の一
形態として、外部との電気接続をするための配線をした
り、あるいはハンドリングのために、レーザ光を発振す
る半導体レーザチップをベース基板に搭載することが行
われている。従来の半導体レーザ装置では、半導体レー
ザチップは、窒化アルミニウム（ＡｌＮ）からなるベー
ス基板に搭載されている。搭載のしかたとしては半導体
レーザチップの半導体基板側とベース基板を接着するい
わゆるジャンクションアップが一般的である。2. Description of the Related Art As one mode of assembling a semiconductor laser device, a semiconductor laser chip for oscillating laser light is mounted on a base substrate for wiring for electrical connection with the outside or for handling. That is being done. In a conventional semiconductor laser device, a semiconductor laser chip is mounted on a base substrate made of aluminum nitride (AlN). As a mounting method, a so-called junction-up for bonding a semiconductor substrate side of a semiconductor laser chip and a base substrate is generally used.
【０００３】[0003]
【発明が解決しようとする課題】本発明者の研究による
と、このような従来の構造は、横単一モードで２００ｍ
Ｗ程度までの低いレーザパワーで発振する半導体レーザ
チップでは使用可能であるが、横単一モードで高い出力
が得られる半導体レーザチップに用いると長期信頼性に
問題があることがわかってきた。すなわち耐久テストを
行うと短時間で発振特性が大きく変化するものが多いこ
とがわかった。According to the study of the present inventor, such a conventional structure has a lateral single mode of 200 m.
Although it can be used with a semiconductor laser chip that oscillates at a laser power as low as about W, it has been found that there is a problem in long-term reliability when used in a semiconductor laser chip that can obtain high output in a transverse single mode. In other words, it has been found that in many cases, the durability characteristic greatly changes in a short time after the durability test.
【０００４】本発明は、長期にわたり安定して発振する
横単一モードで高出力の半導体レーザ装置を提供するこ
とを目的とする。An object of the present invention is to provide a high-output semiconductor laser device in a transverse single mode that oscillates stably for a long period of time.
【０００５】[0005]
【課題を解決する手段】本発明者は、横単一モードで発
振する高出力の半導体レーザ装置から長期にわたって安
定な出力が得られるための手段を検討をしたところ、半
導体レーザチップをベース基板に搭載する形態に最適な
形態があることを見出し、本発明に至った。すなわち、
本発明は半導体基板上に化合物半導体薄膜が形成され横
単一モードで発振する最大出力が３００ｍＷ以上の半導
体レーザチップがベース基板に搭載された半導体レーザ
装置であり、半導体レーザチップの半導体レーザチップ
の共振器長が１．５ｍｍ以上で、前記ベース基板がＣｕ
Ｗからなることを特徴とする半導体レーザ装置である。Means for Solving the Problems The present inventor studied means for obtaining a stable output for a long period from a high-output semiconductor laser device oscillating in a transverse single mode, and found that a semiconductor laser chip was mounted on a base substrate. The present inventors have found that there is an optimum form for mounting, and have reached the present invention. That is,
The present invention is a semiconductor laser device in which a compound semiconductor thin film is formed on a semiconductor substrate and a semiconductor laser chip oscillating in a transverse single mode and having a maximum output of 300 mW or more is mounted on a base substrate. The resonator length is 1.5 mm or more, and the base substrate is made of Cu.
A semiconductor laser device comprising W.
【０００６】本発明においては、半導体レーザチップの
共振器長は長ければ、具体的には１．５ｍｍ以上であれ
ば注入電流密度が低減され、さらにベース基板に固着し
たときの放熱面積が大きくなるので、高出力化しやすい
だけでなく長期にわたって連続発振させても出力特性が
安定になることがわかった。共振器長の上限値は素子の
内部損失で制限されるが、共振器長は７ｍｍ以下が望ま
しく、４ｍｍ以下であることがより望ましい。In the present invention, if the cavity length of the semiconductor laser chip is long, specifically, if it is 1.5 mm or more, the injection current density is reduced, and the heat radiation area when the semiconductor laser chip is fixed to the base substrate is increased. Therefore, it was found that the output characteristics were stable not only when the output was easily increased, but also when continuous oscillation was performed for a long period of time. Although the upper limit of the resonator length is limited by the internal loss of the element, the resonator length is preferably 7 mm or less, more preferably 4 mm or less.
【０００７】また半導体レーザチップの出力が高い方が
本発明の効果が顕著となり、具体的には横単一モードで
発振する最大出力は３００ｍＷ以上が好ましく、さらに
は４００ｍＷ以上がより好ましい。横単一モード発振す
る最大出力は、室温（２５℃）で注入電流−光出力特性
を測定したときに、キンクが発生する出力とした。The effect of the present invention becomes more remarkable when the output of the semiconductor laser chip is higher. Specifically, the maximum output oscillating in the transverse single mode is preferably 300 mW or more, and more preferably 400 mW or more. The maximum output for transverse single mode oscillation was an output at which kink was generated when the injection current-light output characteristics were measured at room temperature (25 ° C.).
【０００８】半導体レーザチップのベース基板の搭載方
法としてはジャンクションダウンが好ましい。ここでベ
ース基板に用いるＣｕＷ（銅−タングステン）中のＣｕ
の比率は、１ｗｔ％から２０ｗｔ％の範囲が好ましく、
特に半導体レーザチップにＧａＡｓ基板を用いる場合
は、８ｗｔ％から２０ｗｔ％の範囲が、ＧａＡｓ基板と
熱膨張率の差が小さくなるのでより好ましい。またＣｕ
Ｗの比率は上記の範囲で均一でもよいが、その組成を連
続的にまたは段階的に変化させた傾斜材料を用いること
ができる。この場合、例えばＣｕＷのうち半導体レーザ
チップが実装される部分のみを他の部分よりＣｕが多い
材料を用いれば、よりＣｕに近い熱伝導率、電気伝導率
と、ＣｕＷに近い熱膨張率の両方を享受できる。As a method for mounting the base substrate of the semiconductor laser chip, junction down is preferable. Here, Cu in CuW (copper-tungsten) used for the base substrate
Is preferably in the range of 1 wt% to 20 wt%,
In particular, when a GaAs substrate is used for the semiconductor laser chip, the range of 8 wt% to 20 wt% is more preferable because the difference between the GaAs substrate and the coefficient of thermal expansion is reduced. Cu
The ratio of W may be uniform within the above range, but a gradient material whose composition is changed continuously or stepwise can be used. In this case, for example, if only a portion of the CuW in which the semiconductor laser chip is mounted is made of a material having more Cu than the other portions, both the thermal conductivity and electrical conductivity closer to Cu and the thermal expansion coefficient closer to CuW are obtained. You can enjoy.
【０００９】このような半導体レーザチップは、活性層
と上下の導波層との間にそれぞれキャリアブロック層が
設けられていることが好ましい。このキャリアブロック
層は活性層で発光した光が導波層へもれるだけの薄さ
で、かつ反対側から活性層に注入されたキャリアは導波
層側へあふれないような厚さとエネルギー準位を有して
いる。この構造により導波モードが導波層にまで十分に
広がるので、導波モードの尖頭値をさげて大きなレーザ
出力が得られる。あるいは半導体レーザチップはキャリ
アブロック層が形成されていなくても、活性層がエネル
ギギャップが小さい井戸により形成されていて導波層を
大きくできる構造であることが好ましい。これにより導
波モードの尖頭値をさげて大きなレーザ出力が得られ
る。In such a semiconductor laser chip, a carrier block layer is preferably provided between the active layer and the upper and lower waveguide layers. The carrier block layer is thin enough to allow light emitted from the active layer to leak into the waveguide layer, and the thickness and energy level of the carrier injected into the active layer from the opposite side are such that the carrier does not overflow into the waveguide layer. have. With this structure, the waveguide mode sufficiently spreads to the waveguide layer, so that the peak value of the waveguide mode is reduced and a large laser output is obtained. Alternatively, it is preferable that the semiconductor laser chip has a structure in which the active layer is formed by a well having a small energy gap and the waveguide layer can be enlarged even if the carrier block layer is not formed. Thereby, a large laser output can be obtained by reducing the peak value of the waveguide mode.
【００１０】[0010]
【発明の実施の形態】本発明を実施の形態により説明す
る。図１は本発明の半導体レーザ装置の１例を示す図で
ある。この装置の基本構成は半導体レーザチップ１とベ
ース基板２と配線基板３からなっている。半導体レーザ
チップはGaAs半導体基板上に活性層を含む化合物半導体
結晶層の積層が形成されている。この半導体レーザチッ
プ１は、図１(b)のようにＣｕ10Ｗ90（ｗｔ％）からな
るベース基板２上に、半導体レーザチップの化合物半導
体層が形成された側をベース基板の搭載面に向けたいわ
ゆるジャンクションダウンで半田により固着されてい
る。配線基板３は図１(a)のように、その表面にパター
ニングで区画された複数の導電部４ａ、４ｂ、４ｃを有
している。ＣｕＷからなり半導体レーザチップを搭載し
たベース基板が配線基板の第１の導電部４ａに固着さ
れ、半導体レーザチップの半導体基板と配線基板の第２
の導電部４ｂとは複数のワイヤ５を用いてワイヤボンデ
ィングして電気接続している。さらにこの配線基板上に
半導体レーザチップからの出力モニター用にフォトダイ
オード６を搭載することもできる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to embodiments. FIG. 1 is a view showing one example of a semiconductor laser device of the present invention. The basic configuration of this device includes a semiconductor laser chip 1, a base substrate 2, and a wiring substrate 3. The semiconductor laser chip has a structure in which a compound semiconductor crystal layer including an active layer is laminated on a GaAs semiconductor substrate. As shown in FIG. 1 (b), the semiconductor laser chip 1 has, on a base substrate 2 made of Cu 10 W 90 (wt%), the side on which the compound semiconductor layer of the semiconductor laser chip is formed on the mounting surface of the base substrate. It is fixed by solder at the so-called junction down. As shown in FIG. 1A, the wiring substrate 3 has a plurality of conductive portions 4a, 4b, 4c partitioned on the surface thereof by patterning. A base substrate made of CuW and having a semiconductor laser chip mounted thereon is fixed to the first conductive portion 4a of the wiring substrate, and a semiconductor substrate of the semiconductor laser chip and a second substrate of the wiring substrate
Is electrically connected to the conductive portion 4b by wire bonding using a plurality of wires 5. Further, the photodiode 6 can be mounted on the wiring board for monitoring the output from the semiconductor laser chip.
【００１１】さらにこの配線基板を、図には示してない
が光ファイバーの入力端を固定した別の基板に設置して
半導体レーザ装置とすることもできる。図２に別の半導
体レーザ装置の例を示す。この半導体レーザ装置は、電
子部品で広く用いられる外部との導電リード７を有す丸
型パッケージ８の基台１１に、ＣｕＷからなり半導体レ
ーザチップ９を搭載したベース基板１０を実装してい
る。図２でレーザ光は左方向に出力される。Further, although not shown in the figure, this wiring board may be installed on another board to which the input end of the optical fiber is fixed, to form a semiconductor laser device. FIG. 2 shows another example of a semiconductor laser device. In this semiconductor laser device, a base substrate 10 made of CuW and having a semiconductor laser chip 9 mounted thereon is mounted on a base 11 of a round package 8 having conductive leads 7 to the outside, which is widely used for electronic components. In FIG. 2, the laser light is output to the left.
【００１２】[0012]
【実施例】図２に示した半導体レーザ装置の長期信頼性
テストを行った。テストに用いた半導体レーザチップ
は、ＧａＡｓ基板の上にＩｎＧａＡｓ活性層と上下の導
波層を含む化合物半導体結晶層が形成されており、活性
層と上下の導波層の間にそれぞれキャリアブロック層を
備えている。そしてレーザ光の発振方向の両端面間の距
離である共振器長が１．８ｍｍであり、ストライプ幅が
４μｍで、単一横モード発振するように設計されてい
る。この半導体レーザチップ９を、Ｃｕ10Ｗ90からなる
ベース基板１０に固定した。固定方法は半導体レーザチ
ップの基板側を上にし、化合物半導体層が形成された側
をＣｕＷの搭載面に向けて固着するいわゆるジャンクシ
ョンダウンで行った。ＣｕＷの搭載面には予めＡｕＳｎ
合金が蒸着されており、この面に半導体レーザチップの
ｐ型電極面を接触させ、窒素雰囲気中で２５０℃の温度
で15秒保持した後、室温にもどすことで半導体レーザチ
ップをベース基板に固着した。EXAMPLE A long-term reliability test of the semiconductor laser device shown in FIG. 2 was performed. The semiconductor laser chip used for the test has a compound semiconductor crystal layer including an InGaAs active layer and upper and lower waveguide layers formed on a GaAs substrate, and a carrier block layer between the active layer and the upper and lower waveguide layers. It has. The resonator length, which is the distance between both end faces in the oscillation direction of the laser light, is 1.8 mm, the stripe width is 4 μm, and a single transverse mode oscillation is designed. This semiconductor laser chip 9 was fixed on a base substrate 10 made of Cu 10 W 90 . The fixing was performed by so-called junction-down in which the substrate side of the semiconductor laser chip was turned up and the side on which the compound semiconductor layer was formed was fixed to the mounting surface of CuW. AuSn is mounted on the CuW mounting surface in advance.
The p-type electrode surface of the semiconductor laser chip is brought into contact with the alloy and kept at 250 ° C for 15 seconds in a nitrogen atmosphere, and then returned to room temperature to fix the semiconductor laser chip to the base substrate. did.
【００１３】ここで用いた半導体レーザチップは、図３
のような注入電流−光出力特性を示し、７００ｍＷを越
えたところでキンクが発生し、７００ｍＷまでは横単一
モード発振することが分る。The semiconductor laser chip used here is shown in FIG.
Injection current vs. light output characteristics as shown in FIG. 5 show that a kink occurs when the power exceeds 700 mW, and that a transverse single mode oscillation occurs up to 700 mW.
【００１４】この半導体レーザチップを搭載したベース
基板１０を、図２の丸型パッケージ８に実装した。ベー
ス基板１０を丸型パッケージの銅からなる基台１１に鉛
すず半田で接着したのち、半導体レーザチップに電流を
注入するためのワイヤボンディングを行った。これをテ
ストサンプルとして８個を用意して、恒温層にいれて耐
久テストを行った。テストサンプルはパッケージの蓋は
はずしたままとした。５０℃に保持した恒温層内で、８
個のテストサンプルのそれぞれの出力が３００ｍＷにな
るように電流制御して、その電流値の時間変化を測定し
た。図４に６００時間までの結果を示す。６００時間ま
で連続発振させても、注入電流値の変化は１０％以内で
あった。なおここでは耐久テストの加速のために雰囲気
温度を５０℃、レーザ出力３００ｍＷでおこなったが、
この時にテストサンプルに加わる負荷は、雰囲気温度を
室温とした場合は、レーザ出力として３００ｍＷ以上に
相当する。The base substrate 10 on which the semiconductor laser chip is mounted is mounted on the round package 8 shown in FIG. After bonding the base substrate 10 to the base 11 made of copper in a round package with lead-tin solder, wire bonding for injecting current into the semiconductor laser chip was performed. Eight specimens were prepared as test samples, and placed in a constant temperature layer to perform a durability test. The test sample was left with the package lid removed. In a thermostatic chamber maintained at 50 ° C, 8
The current was controlled so that the output of each of the test samples became 300 mW, and the time change of the current value was measured. FIG. 4 shows the results up to 600 hours. Even when continuous oscillation was performed for up to 600 hours, the change in the injection current value was within 10%. In this case, in order to accelerate the durability test, the ambient temperature was set to 50 ° C. and the laser output was set to 300 mW.
The load applied to the test sample at this time corresponds to a laser output of 300 mW or more when the ambient temperature is room temperature.
【００１５】[0015]
【比較例】ベース基板１０にＡｌＮを用いた以外は実施
例と同じ条件の比較サンプル８個を実施例のテストサン
プルと一緒に恒温層にいれた。その時３００ｍＷのレー
ザ光を出力する電流値の時間変化を図５に示す。早い時
間で注入電流が激増するサンプルがあり、また注入電流
がなだらかに変化するサンプルであっても、いずれも実
施例のテストサンプルに比べて変化の傾きが大きいこと
がわかった。COMPARATIVE EXAMPLE Eight comparative samples under the same conditions as in the example except that AlN was used for the base substrate 10 were placed in a thermostatic layer together with the test sample of the example. FIG. 5 shows a time change of a current value for outputting a laser beam of 300 mW at that time. It was found that there was a sample in which the injection current sharply increased in an early time, and even in the case of the sample in which the injection current changed gradually, the change gradient was larger than that of the test sample of the example.
【００１６】[0016]
【発明の効果】本発明によれば、長期にわたって連続発
振させても横単一モードで特性が安定な高出力の半導体
レーザ装置が得られる。According to the present invention, a high-power semiconductor laser device having stable characteristics in a transverse single mode even when continuous oscillation is performed for a long period of time can be obtained.
【図１】本発明の半導体レーザ装置の一例を示す図。 (a)上から見た図。(b)主要部を横から見た図。FIG. 1 is a diagram showing an example of a semiconductor laser device of the present invention. (a) View seen from above. (b) The figure which looked at the principal part from the side.
【図２】本発明の半導体レーザ装置の別の例を示す図。FIG. 2 is a diagram showing another example of the semiconductor laser device of the present invention.
【図３】実施例に用いた半導体レーザチップの注入電流
−光出力特性。FIG. 3 shows an injection current-optical output characteristic of the semiconductor laser chip used in the example.
【図４】実施例のテストサンプルの注入電流の変化を示
す図。FIG. 4 is a diagram showing a change in injection current of a test sample of an example.
【図５】比較例サンプルの注入電流の変化を示す図。FIG. 5 is a diagram showing a change in injection current of a comparative example sample.
１、９ ・・半導体レーザチップ ２、１０ ・・ベ
ース基板 ３ ・・配線基板 ４ａ，４ｂ、４ｃ ・・
導電部 ５ ・・ワイヤ ６ ・・フォトダイオー
ド ７ ・・導電リード ８ ・・丸型パッケージ １１ ・・基台1, 9 ··· semiconductor laser chip 2, 10 ··· base substrate 3 ··· wiring substrate 4a, 4b, 4c ···
Conductive part 5 ··· Wire 6 ··· Photodiode 7 ··· Conductive lead 8 ··· Round package 11 ··· Base
Claims (3)
れ横単一モードで発振する最大出力が３００ｍＷ以上の
半導体レーザチップをベース基板に搭載した半導体レー
ザ装置であり、前記半導体レーザチップの共振器長が
１．５ｍｍ以上で、前記ベース基板がＣｕＷからなるこ
とを特徴とする半導体レーザ装置。1. A semiconductor laser device comprising: a semiconductor laser chip having a compound semiconductor thin film formed on a semiconductor substrate and oscillating in a transverse single mode and having a maximum output of 300 mW or more mounted on a base substrate; and a resonator of the semiconductor laser chip. A semiconductor laser device having a length of at least 1.5 mm and the base substrate made of CuW.
ンダウンによりベース基板に固着されていることを特徴
とする請求項１に記載の半導体レーザ装置。2. The semiconductor laser device according to claim 1, wherein said semiconductor laser chip is fixed to a base substrate by junction down.
徴とする請求項１または２に記載の半導体レーザ装置。3. The semiconductor laser device according to claim 1, wherein said semiconductor substrate is GaAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000287712A JP2001160648A (en) | 1999-09-24 | 2000-09-21 | Semiconductor laser device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26982899 | 1999-09-24 | ||
| JP11-269828 | 1999-09-24 | ||
| JP2000287712A JP2001160648A (en) | 1999-09-24 | 2000-09-21 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001160648A true JP2001160648A (en) | 2001-06-12 |
Family
ID=26548932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000287712A Pending JP2001160648A (en) | 1999-09-24 | 2000-09-21 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001160648A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179494A (en) * | 2002-11-28 | 2004-06-24 | Mitsubishi Electric Corp | Semiconductor laser apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187991A (en) * | 1988-01-22 | 1989-07-27 | Nec Corp | Semiconductor laser device |
| JPH04120786A (en) * | 1990-09-12 | 1992-04-21 | Furukawa Electric Co Ltd:The | Quantum well semiconductor laser element |
| JPH11103121A (en) * | 1997-09-25 | 1999-04-13 | Yokogawa Electric Corp | Semiconductor laser |
-
2000
- 2000-09-21 JP JP2000287712A patent/JP2001160648A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187991A (en) * | 1988-01-22 | 1989-07-27 | Nec Corp | Semiconductor laser device |
| JPH04120786A (en) * | 1990-09-12 | 1992-04-21 | Furukawa Electric Co Ltd:The | Quantum well semiconductor laser element |
| JPH11103121A (en) * | 1997-09-25 | 1999-04-13 | Yokogawa Electric Corp | Semiconductor laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179494A (en) * | 2002-11-28 | 2004-06-24 | Mitsubishi Electric Corp | Semiconductor laser apparatus |
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