JP2001158672A - Anode joining method - Google Patents
Anode joining methodInfo
- Publication number
- JP2001158672A JP2001158672A JP34145499A JP34145499A JP2001158672A JP 2001158672 A JP2001158672 A JP 2001158672A JP 34145499 A JP34145499 A JP 34145499A JP 34145499 A JP34145499 A JP 34145499A JP 2001158672 A JP2001158672 A JP 2001158672A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- plate
- glass substrate
- substrate
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Ceramic Products (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体圧力センサ
や半導体加速度センサ等のマイクロ加工センサ、また、
マイクロアクチュエータの等の製造において、半導体
（シリコン）基板とガラス基板とを接合する陽極接合に
関するものである。The present invention relates to a microfabricated sensor such as a semiconductor pressure sensor and a semiconductor acceleration sensor,
The present invention relates to anodic bonding for bonding a semiconductor (silicon) substrate and a glass substrate in manufacturing a microactuator or the like.
【０００２】[0002]
【従来の技術】従来のシリコン基板とガラス基板との陽
極接合方法について図６を用いて説明する。ここでは、
半導体圧力センサが形成されたシリコン基板１を例にあ
げる。シリコン基板１には複数の圧力センサチップが形
成され、圧力センサチップ個々には、圧力により変位す
る肉薄構造のダイヤフラム３及び、ダイヤフラムの変位
を抵抗値変化として検出するピエゾ抵抗４が形成されて
いる。この圧力センサチップの高精度化を図るためにシ
リコン基板１にガラス基板（パイレックスガラス）２を
陽極接合し、その後チップサイズで、個々にダイシング
することにより、ガラス台座付半導体圧力センサを製造
している。尚、半導体圧力センサの場合、ガラス基板２
には、外部の圧力を半導体圧力センサのダイヤフラム２
に導くための圧力導入孔５が設けられている。2. Description of the Related Art A conventional anodic bonding method between a silicon substrate and a glass substrate will be described with reference to FIG. here,
A silicon substrate 1 on which a semiconductor pressure sensor is formed will be described as an example. A plurality of pressure sensor chips are formed on the silicon substrate 1, and each of the pressure sensor chips is formed with a diaphragm 3 having a thin structure that is displaced by pressure and a piezo resistor 4 that detects displacement of the diaphragm as a change in resistance value. . In order to increase the accuracy of the pressure sensor chip, a glass substrate (Pyrex glass) 2 is anodically bonded to a silicon substrate 1 and then individually diced in a chip size to produce a semiconductor pressure sensor with a glass pedestal. I have. In the case of a semiconductor pressure sensor, the glass substrate 2
The external pressure is applied to the diaphragm 2 of the semiconductor pressure sensor.
Is provided with a pressure introducing hole 5 for guiding the pressure.
【０００３】陽極接合は、ヒータ電極８と電極ピン１４
により、ガラス基板２側を０Ｖ、シリコン基板１側に約
４００〜約１０００Ｖの直流電圧を印加し、さらに、約
３００〜約５００℃の高温とし、数百グラムの荷重を印
加して行う。また、陽極接合を行うチャンバー（小室，
図示せず）内は真空又は窒素雰囲気である。The anodic bonding is performed by using a heater electrode 8 and an electrode pin 14.
Thus, a DC voltage of about 400 V to about 1000 V is applied to the glass substrate 2 side and about 400 to about 1000 V to the silicon substrate 1, and a high temperature of about 300 to about 500 ° C. is applied under a load of several hundred grams. In addition, the chamber (small chamber,
(Not shown) is a vacuum or nitrogen atmosphere.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、陽極接
合後、ガラス基板２中に含まれているアルカリ金属（ナ
トリウムＮａ，カリウムＫ等）が、ガラス基板２表面に
偏析してくる。このアルカリ金属はヒータ電極８へ熱拡
散するとともに、チャンバー内に飛散し、シリコン基板
１表面に付着する。また、陽極接合したシリコン基板１
を大気中に取り出すと、ガラス基板２表面偏析したアル
カリ金属（特にナトリウム）が二酸化炭素及び酸素と反
応し、水に可溶の白色結晶の炭酸ナトリウムや、水に不
溶な黒茶色の酸化ナトリウムが析出する。ヒータ電極８
に拡散したアルカリ金属は、真空中で再過熱すると、そ
の蒸気圧が低いのでチャンバー内に飛散し、チャンバー
内部を汚染する。シリコン基板１表面に付着したアルカ
リ金属は、半導体チップを構成しているピエゾ抵抗４等
や、このピエゾ抵抗４形成部のＰＮジャンクションへ拡
散し、リーク電流の増加や耐圧低下を引き起こす。ま
た、半導体チップがＩＣ等のＭＯＳトランジスタの場
合、そのしきい値変動等を引き起こす。However, after the anodic bonding, alkali metals (sodium Na, potassium K, etc.) contained in the glass substrate 2 segregate on the surface of the glass substrate 2. The alkali metal thermally diffuses into the heater electrode 8, scatters into the chamber, and adheres to the surface of the silicon substrate 1. In addition, the anodic bonding silicon substrate 1
Is taken out into the atmosphere, the alkali metal (especially sodium) segregated on the surface of the glass substrate 2 reacts with carbon dioxide and oxygen, and water-soluble white crystalline sodium carbonate and water-insoluble black-brown sodium oxide are formed. Precipitates. Heater electrode 8
When reheated in vacuum, the alkali metal that has diffused into the chamber scatters in the chamber because of its low vapor pressure, and contaminates the inside of the chamber. The alkali metal adhering to the surface of the silicon substrate 1 diffuses into the piezoresistor 4 and the like constituting the semiconductor chip and the PN junction of the piezoresistor 4 forming portion, causing an increase in leak current and a decrease in withstand voltage. In addition, when the semiconductor chip is a MOS transistor such as an IC, the threshold value of the semiconductor chip varies.
【０００５】このように従来の陽極接合方法では、ガラ
ス基板２から偏析したアルカリ金属によりシリコン基板
１に形成された半導体チップの特性に悪影響を及ぼすと
ともに、チャンバー内部がアルカリ金属で汚染され、チ
ャンバー内部やヒータ電極８の清掃が必要となる。この
清掃作業は手間がかかり、大きな作業ロスとなる。As described above, in the conventional anodic bonding method, the alkali metal segregated from the glass substrate 2 adversely affects the characteristics of the semiconductor chip formed on the silicon substrate 1, and the inside of the chamber is contaminated with the alkali metal, and the inside of the chamber is contaminated. And cleaning of the heater electrode 8 is required. This cleaning work is troublesome and results in a large work loss.
【０００６】本発明は、上記事由に鑑みてなしたもの
で、その目的とするところは、ガラス基板から偏析する
アルカリ金属による悪影響を低減することのできる陽極
接合方法を提供することにある。[0006] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an anodic bonding method capable of reducing an adverse effect of an alkali metal segregated from a glass substrate.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、請求項１記載の発明は、シリコン基板とガラス基板
とを重ね合せ、電圧を印加して前記シリコン基板と前記
ガラス基板とを接合する陽極接合方法において、前記シ
リコン基板の接合面ではない主表面に第１の導電体を密
着させ、該第１の導電体を介して正の電圧を印加し、前
記ガラス基板の接合面ではない主表面に負の電圧を印加
することを特徴とするものである。In order to achieve the above object, according to the first aspect of the present invention, a silicon substrate and a glass substrate are overlapped, and a voltage is applied to join the silicon substrate and the glass substrate. In the anodic bonding method, the first conductor is brought into close contact with the main surface of the silicon substrate, which is not the bonding surface, and a positive voltage is applied through the first conductor, so that the first substrate is not the bonding surface of the glass substrate. It is characterized in that a negative voltage is applied to the main surface.
【０００８】請求項２記載の発明は、請求項１記載の陽
極接合方法において、前記ガラス基板の接合面ではない
主表面に第２の導電体を密着させ、該第２の導電体を介
して負の電圧を印加することを特徴とするものである。According to a second aspect of the present invention, in the anodic bonding method according to the first aspect, a second conductor is brought into close contact with a main surface of the glass substrate which is not a bonding surface, and the second conductor is interposed through the second conductor. It is characterized by applying a negative voltage.
【０００９】請求項３記載の発明は、請求項１又は請求
項２記載の陽極接合方法において、前記第１の導電体が
シリコン板であることを特徴とするものである。According to a third aspect of the present invention, in the anodic bonding method according to the first or second aspect, the first conductor is a silicon plate.
【００１０】請求項４記載の発明は、請求項１乃至請求
項３のいずれかに記載の陽極接合方法において、前記第
１の導電体の密着面を粗面化したことを特徴とするもの
である。According to a fourth aspect of the present invention, in the anodic bonding method according to any one of the first to third aspects, the contact surface of the first conductor is roughened. is there.
【００１１】請求項５記載の発明は、請求項２記載の陽
極接合方法において、前記第２の導電体がシリコン板で
あることを特徴とするものである。According to a fifth aspect of the present invention, in the anodic bonding method according to the second aspect, the second conductor is a silicon plate.
【００１２】請求項６記載の発明は、請求項２記載の陽
極接合方法において、前記第２の導電体が、一方の主表
面に金属層が形成され、かつ導電性を有するガラス板で
あり、該ガラス板の他方の主表面を、前記ガラス基板の
接合面ではない主表面に密着させ、かつ前記ガラス板の
金属層側の主表面に負の電圧を印加することを特徴とす
るものである。According to a sixth aspect of the present invention, in the anodic bonding method according to the second aspect, the second conductor is a glass plate having a metal layer formed on one main surface and having conductivity, The other main surface of the glass plate is brought into close contact with a main surface that is not the bonding surface of the glass substrate, and a negative voltage is applied to the main surface of the glass plate on the metal layer side. .
【００１３】請求項７記載の発明は、請求項２記載の陽
極接合方法において、前記第２の導電体が、カーボン板
であることを特徴とするものである。According to a seventh aspect of the present invention, in the anodic bonding method according to the second aspect, the second conductor is a carbon plate.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態に係る
陽極接合方法について図１乃至図５にもとづき説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An anodic bonding method according to an embodiment of the present invention will be described below with reference to FIGS.
【００１５】図１は本発明の第１の実施の形態の陽極接
合方法を示すための、シリコン基板１とガラス基板２の
断面図である。従来例と同様に、シリコン基板１に半導
体圧力センサチップが形成されたものを例にあげる。シ
リコン基板１には複数の半導体圧力センサチップが形成
され、半導体圧力センサチップ個々には、圧力により変
位する肉薄構造のダイヤフラム３及び、ダイヤフラムの
変位を抵抗値変化として検出するピエゾ抵抗４が形成さ
れている。この圧力センサチップの高精度化を図るため
にシリコン基板１にガラス基板（パイレックスガラス）
２を陽極接合し、その後チップサイズで、個々にダイシ
ングすることにより、ガラス台座付圧力センサを製造し
ている。尚、半導体圧力センサの場合ガラス基板２に
は、外部の圧力を半導体圧力センサのダイヤフラム２に
導くための圧力導入孔５が設けられている。FIG. 1 is a sectional view of a silicon substrate 1 and a glass substrate 2 for illustrating the anodic bonding method according to the first embodiment of the present invention. Similar to the conventional example, an example in which a semiconductor pressure sensor chip is formed on a silicon substrate 1 will be described. A plurality of semiconductor pressure sensor chips are formed on the silicon substrate 1, and each of the semiconductor pressure sensor chips is formed with a diaphragm 3 having a thin structure that is displaced by pressure and a piezo resistor 4 that detects displacement of the diaphragm as a change in resistance value. ing. In order to improve the accuracy of this pressure sensor chip, a glass substrate (pyrex glass) is used for the silicon substrate 1.
2 are anodically bonded and then individually diced in a chip size to produce a pressure sensor with a glass pedestal. In the case of a semiconductor pressure sensor, the glass substrate 2 is provided with a pressure introducing hole 5 for guiding external pressure to the diaphragm 2 of the semiconductor pressure sensor.
【００１６】ここで、シリコン基板１において、ガラス
基板２との接合面ではない主表面（図中シリコン基板１
の上面）に、導電体であるシリコン板６を密着させる。
このシリコン板６の厚さ及びシート抵抗は、例えば厚さ
は約０．３〜０．５ｍｍで、シート抵抗は０．１〜約６
Ωｃｍである。また、ガラス基板２において、シリコン
基板１との接合面ではない主表面（図中ガラス基板２の
下面）に板状の導電体である導電板７を密着させる。そ
して、シリコン板６に電極ピン１４を接触させて正の電
圧を印加し、導電板７にヒータ電極８を接触させて負の
電圧を印加する。つまり、シリコン基板１と電極ピン１
４間にシリコン板６を介在させ、そして、ガラス基板２
とヒータ電極８間に導電板７を介在させて、正の電圧及
び負の電圧を印加する。Here, the main surface of the silicon substrate 1 which is not the bonding surface with the glass substrate 2 (the silicon substrate 1 in the drawing)
A silicon plate 6 which is a conductor.
The thickness and sheet resistance of the silicon plate 6 are, for example, about 0.3 to 0.5 mm, and the sheet resistance is 0.1 to about 6 mm.
Ωcm. In the glass substrate 2, a conductive plate 7, which is a plate-like conductor, is adhered to a main surface (the lower surface of the glass substrate 2 in the figure) which is not a bonding surface with the silicon substrate 1. Then, a positive voltage is applied by bringing the electrode pins 14 into contact with the silicon plate 6, and a negative voltage is applied by bringing the heater electrode 8 into contact with the conductive plate 7. That is, the silicon substrate 1 and the electrode pins 1
4 and a glass plate 2
A positive voltage and a negative voltage are applied with the conductive plate 7 interposed between the heater and the heater electrode 8.
【００１７】陽極接合で電圧を電極ピン１４及びヒータ
電極８で電圧を印加すると、ガラス基板２（パイレック
スガラス）に含まれているアルカリ金属（イオン）は、
ヒータ電極８に印加された負の電圧によりガラス基板２
に密着された導電板７側に移動し、導電板７に付着す
る。よって、ヒータ電極８へのアルカリ金属の付着を防
止することができるとともに、チャンバー内へのアルカ
リ金属の飛散も大部分防止することができる。また、こ
れ以外に一部ガラス基板２から偏析したアルカリ金属
は、チャンバー内に飛散するが、シリコン基板１表面に
シリコン板６を密着させてカバーしているので、シリコ
ン基板１の表面への付着を防止することができる。When a voltage is applied by the electrode pin 14 and the heater electrode 8 by anodic bonding, the alkali metal (ion) contained in the glass substrate 2 (pyrex glass) becomes
The negative voltage applied to the heater electrode 8 causes the glass substrate 2
Move to the side of the conductive plate 7 that is in close contact with the conductive plate 7 and adhere to the conductive plate 7. Therefore, the adhesion of the alkali metal to the heater electrode 8 can be prevented, and the scattering of the alkali metal into the chamber can be largely prevented. In addition, the alkali metal partially segregated from the glass substrate 2 scatters into the chamber, but adheres to the surface of the silicon substrate 1 because the silicon plate 6 is adhered to the surface of the silicon substrate 1 to cover the surface. Can be prevented.
【００１８】このように、シリコン基板１の接合面では
ない主表面にシリコン板６を密着させ、シリコン板６を
介して正の電圧を印加し、ガラス基板２の接合面ではな
い主表面に導電板７を密着させ、導電板７を介して負の
電圧を印加するようにしたので、ガラス基板２から偏析
したアルカリ金属の大部分を導電板７に付着させてヒー
タ電極８への付着を防止するとともに、一部飛散したア
ルカリ金属のシリコン基板１表面への付着をシリコン板
６で防止することができるという効果を奏する。As described above, the silicon plate 6 is brought into close contact with the main surface of the silicon substrate 1 which is not the bonding surface, a positive voltage is applied through the silicon plate 6, and the conductive surface is applied to the main surface of the glass substrate 2 which is not the bonding surface. Since the plate 7 is brought into close contact and a negative voltage is applied via the conductive plate 7, most of the alkali metal segregated from the glass substrate 2 is attached to the conductive plate 7 to prevent the alkali metal from being attached to the heater electrode 8. At the same time, there is an effect that adhesion of the partially scattered alkali metal to the surface of the silicon substrate 1 can be prevented by the silicon plate 6.
【００１９】図２は本発明の第２の実施の形態の陽極接
合方法を示すための、シリコン基板１とガラス基板２の
断面図である。基本構成は第１の実施の形態と同様であ
るが、ガラス基板２に密着させる材料が、導電体である
シリコン板９である点が異なる。つまり本実施の形態で
は、シリコン基板１において、ガラス基板２との接合面
ではない主表面（図中シリコン基板１の上面）に導電体
であるシリコン板６を密着させるとともに、ガラス基板
２において、シリコン基板１との接合面ではない主表面
（図中ガラス基板２の下面）にシリコン板（シリコンウ
ェハ等）９を密着させる。そして、シリコン板６に電極
ピン１４を接触させて正の電圧を印加し、シリコン板９
にヒータ電極８を接触させて負の電圧を印加する。FIG. 2 is a sectional view of a silicon substrate 1 and a glass substrate 2 for illustrating an anodic bonding method according to a second embodiment of the present invention. The basic configuration is the same as that of the first embodiment, except that the material to be brought into close contact with the glass substrate 2 is a silicon plate 9 which is a conductor. That is, in the present embodiment, in the silicon substrate 1, the silicon plate 6, which is a conductor, is brought into close contact with the main surface (the upper surface of the silicon substrate 1 in the figure) which is not the bonding surface with the glass substrate 2. A silicon plate (silicon wafer or the like) 9 is adhered to a main surface (the lower surface of the glass substrate 2 in the figure) which is not a bonding surface with the silicon substrate 1. Then, the electrode pins 14 are brought into contact with the silicon plate 6 to apply a positive voltage to the silicon plate 9.
To the heater electrode 8 to apply a negative voltage.
【００２０】陽極接合で電圧を電極ピン１４及びヒータ
電極８で電圧を印加すると、ガラス基板２（パイレック
スガラス）に含まれているアルカリ金属（イオン）は、
ヒータ電極８に印加された負の電圧によりガラス基板２
に密着されたシリコン板９側に移動し、シリコン板９に
付着する。よって、ヒータ電極８へのアルカリ金属の付
着を防止することができるとともに、チャンバー内への
アルカリ金属の飛散も大部分防止することができる。ま
た、これ以外に一部ガラス基板２から偏析したアルカリ
金属は、チャンバー内に飛散するが、シリコン基板１表
面にシリコン板６を密着させてカバーしているので、シ
リコン基板１の表面への付着を防止することができる。When a voltage is applied by the anode pin 14 and the heater electrode 8 by anodic bonding, the alkali metal (ion) contained in the glass substrate 2 (pyrex glass) becomes
The negative voltage applied to the heater electrode 8 causes the glass substrate 2
It moves to the side of the silicon plate 9 that is in close contact with, and adheres to the silicon plate 9. Therefore, the adhesion of the alkali metal to the heater electrode 8 can be prevented, and the scattering of the alkali metal into the chamber can be largely prevented. In addition, the alkali metal partially segregated from the glass substrate 2 scatters into the chamber, but adheres to the surface of the silicon substrate 1 because the silicon plate 6 is adhered to the surface of the silicon substrate 1 to cover the surface. Can be prevented.
【００２１】このように、シリコン基板１の接合面では
ない主表面にシリコン板６を密着させ、シリコン板６を
介して正の電圧を印加し、ガラス基板２の接合面ではな
い主表面にシリコン板９を密着させ、シリコン板９を介
して負の電圧を印加するようにしたので、ガラス基板２
から偏析したアルカリ金属の大部分をシリコン板９に付
着させてヒータ電極８への付着を防止するとともに、一
部飛散したアルカリ金属のシリコン基板１表面への付着
をシリコン板６で防止することができるという効果を奏
する。また、アルカリ金属付着防止材料をシリコン板に
統一でき、さらにこのシリコン板６，９にシリコンウェ
ハを使用することで、本発明の構成を容易に実現するこ
とができるという効果を奏する。As described above, the silicon plate 6 is brought into close contact with the main surface of the silicon substrate 1 which is not the bonding surface, a positive voltage is applied through the silicon plate 6, and the silicon surface is formed on the main surface of the glass substrate 2 which is not the bonding surface. Since the plate 9 is adhered and a negative voltage is applied through the silicon plate 9, the glass substrate 2
Most of the alkali metal segregated from the substrate is adhered to the silicon plate 9 to prevent the alkali metal from adhering to the heater electrode 8, and at the same time, the silicon plate 6 prevents the partially scattered alkali metal from adhering to the surface of the silicon substrate 1. It has the effect of being able to. In addition, the alkali metal adhesion preventing material can be unified to a silicon plate, and furthermore, by using a silicon wafer for the silicon plates 6 and 9, the configuration of the present invention can be easily realized.
【００２２】図３は本発明の第３の実施の形態の陽極接
合方法を示すための、シリコン基板１とガラス基板２の
断面図である。基本構成は第１及び第２の実施の形態と
同様であるが、ガラス基板２に密着させる材料が、一方
の主表面に金属層（バリヤメタル）１１が形成され、か
つ導電性を有するガラス（パイレックスガラス）板１０
である点が異なる。つまり本実施の形態では、シリコン
基板１において、ガラス基板２との接合面ではない主表
面（図中シリコン基板１の上面）に導電体であるシリコ
ン板６を密着させるとともに、ガラス基板２において、
シリコン基板１との接合面ではない主表面（図中ガラス
基板２の下面）にガラス板１０の金属層１１を形成して
いない主表面を密着させる。そして、シリコン板６に電
極ピン１４を接触させて正の電圧を印加し、ガラス板１
０の金属層１１を形成している主表面にヒータ電極８を
接触させて負の電圧を印加する。FIG. 3 is a sectional view of a silicon substrate 1 and a glass substrate 2 for illustrating an anodic bonding method according to a third embodiment of the present invention. The basic configuration is the same as in the first and second embodiments, but the material to be adhered to the glass substrate 2 is glass (Pyrex) having a metal layer (barrier metal) 11 formed on one main surface and having conductivity. Glass) plate 10
Is different. That is, in the present embodiment, in the silicon substrate 1, the silicon plate 6, which is a conductor, is brought into close contact with the main surface (the upper surface of the silicon substrate 1 in the figure) which is not the bonding surface with the glass substrate 2.
The main surface of the glass plate 10 on which the metal layer 11 is not formed is brought into close contact with the main surface (the lower surface of the glass substrate 2 in the figure) which is not the bonding surface with the silicon substrate 1. Then, the electrode pin 14 is brought into contact with the silicon plate 6 to apply a positive voltage to the glass plate 1.
A negative voltage is applied by bringing the heater electrode 8 into contact with the main surface on which the zero metal layer 11 is formed.
【００２３】陽極接合で電圧を電極ピン１４及びヒータ
電極８で電圧を印加すると、ガラス基板２（パイレック
スガラス）に含まれているアルカリ金属（イオン）は、
ヒータ電極８に印加された負の電圧によりガラス基板２
に密着されたガラス板１０側に移動し、さらにガラス板
１０内に拡散し、金属層１１に移動する。ここで、金属
層１１は、例えばＴｉ／Ｎｉ／Ａｕ，Ｔｉ／Ｐｔ／Ａ
ｕ，Ｔｉ／Ｐｔ／Ｎｉ／Ａｕ等数層以上のスパッタリン
グにより積層し、緻密な構成にしているため、アルカリ
金属はこの金属層１１に滞留し、金属層１１表面側への
偏析はほとんどない。よって、ヒータ電極８へのアルカ
リ金属の付着を防止することができるとともに、チャン
バー内へのアルカリ金属の飛散も大部分防止することが
できる。また、これ以外に一部ガラス基板２から偏析し
たアルカリ金属は、チャンバー内に飛散するが、シリコ
ン基板１表面にシリコン板６を密着させてカバーしてい
るので、シリコン基板１の表面への付着を防止すること
ができる。When a voltage is applied by the anode pin 14 and the heater electrode 8 by anodic bonding, the alkali metal (ion) contained in the glass substrate 2 (pyrex glass) becomes
The negative voltage applied to the heater electrode 8 causes the glass substrate 2
Moves to the side of the glass plate 10 that is in close contact with the substrate, further diffuses into the glass plate 10, and moves to the metal layer 11. Here, the metal layer 11 is made of, for example, Ti / Ni / Au, Ti / Pt / A
Since a plurality of layers such as u, Ti / Pt / Ni / Au, etc. are stacked by sputtering to form a dense structure, the alkali metal stays in the metal layer 11 and hardly segregates on the surface of the metal layer 11. Therefore, the adhesion of the alkali metal to the heater electrode 8 can be prevented, and the scattering of the alkali metal into the chamber can be largely prevented. In addition, the alkali metal partially segregated from the glass substrate 2 scatters into the chamber, but adheres to the surface of the silicon substrate 1 because the silicon plate 6 is adhered to the surface of the silicon substrate 1 to cover the surface. Can be prevented.
【００２４】このように、シリコン基板１の接合面では
ない主表面にシリコン板６を密着させ、シリコン板６を
介して正の電圧を印加し、ガラス基板２の接合面ではな
い主表面に、一方の主表面に金属層１１が形成され、か
つ導電性を有するガラス板１０を密着させ、ガラス板１
０の金属層側の主表面に負の電圧を印加するようにした
ので、ガラス基板２から偏析したアルカリ金属の大部分
をガラス板１０内の金属層１１に滞留させてヒータ電極
８への付着をより効果的に防止するとともに、一部飛散
したアルカリ金属のシリコン基板１表面への付着をシリ
コン板６で防止することができるという効果を奏する。As described above, the silicon plate 6 is brought into close contact with the main surface of the silicon substrate 1 which is not the bonding surface, and a positive voltage is applied through the silicon plate 6 to apply the positive voltage to the main surface of the glass substrate 2 which is not the bonding surface. A glass plate 10 having a metal layer 11 formed on one main surface and having conductivity is brought into close contact with the glass
Since a negative voltage is applied to the main surface on the side of the metal layer 0, most of the alkali metal segregated from the glass substrate 2 stays in the metal layer 11 in the glass plate 10 and adheres to the heater electrode 8. Is more effectively prevented, and the adhesion of the partially scattered alkali metal to the surface of the silicon substrate 1 can be prevented by the silicon plate 6.
【００２５】図４本発明の第４実施の形態の陽極接合方
法を示すための、シリコン基板１とガラス基板２の断面
図である。基本構成は第１の実施の形態と同様である
が、ガラス基板２に密着させる材料が、導電体であるカ
ーボン板１２である点が異なる。つまり本実施の形態で
は、シリコン基板１において、ガラス基板２との接合面
ではない主表面（図中シリコン基板１の上面）に導電体
であるシリコン板６を密着させるとともに、ガラス基板
２において、シリコン基板１との接合面ではない主表面
（図中ガラス基板２の下面）にカーボン板１２を密着さ
せる。そして、シリコン板６に電極ピン１４を接触させ
て正の電圧を印加し、カーボン板１２にヒータ電極８を
接触させて負の電圧を印加する。ここで、カーボン板１
２の抵抗は約０．１〜約０．８Ωｃｍ位がよい 陽極接合で電圧を電極ピン１４及びヒータ電極８で電圧
を印加すると、ガラス基板２（パイレックスガラス）に
含まれているアルカリ金属（イオン）は、ヒータ電極８
に印加された負の電圧によりガラス基板２に密着された
カーボン板１２側に移動し、カーボン板１２に付着す
る。よって、ヒータ電極８へのアルカリ金属の付着を防
止することができるとともに、チャンバー内へのアルカ
リ金属の飛散も大部分防止することができる。また、こ
れ以外に一部ガラス基板２から偏析したアルカリ金属
は、チャンバー内に飛散するが、シリコン基板１表面に
シリコン板６を密着させてカバーしているので、シリコ
ン基板１の表面への付着を防止することができる。FIG. 4 is a sectional view of a silicon substrate 1 and a glass substrate 2 for illustrating an anodic bonding method according to a fourth embodiment of the present invention. The basic configuration is the same as that of the first embodiment, except that the material to be brought into close contact with the glass substrate 2 is a carbon plate 12 which is a conductor. That is, in the present embodiment, in the silicon substrate 1, the silicon plate 6, which is a conductor, is brought into close contact with the main surface (the upper surface of the silicon substrate 1 in the figure) which is not the bonding surface with the glass substrate 2. The carbon plate 12 is adhered to the main surface (the lower surface of the glass substrate 2 in the figure) which is not the bonding surface with the silicon substrate 1. Then, a positive voltage is applied by bringing the electrode pins 14 into contact with the silicon plate 6, and a negative voltage is applied by bringing the heater electrodes 8 into contact with the carbon plate 12. Here, carbon plate 1
2 is preferably about 0.1 to about 0.8 Ωcm. When a voltage is applied by the anodic bonding with the electrode pins 14 and the heater electrode 8, the alkali metal (ion) contained in the glass substrate 2 (pyrex glass) is applied. ) Is the heater electrode 8
Is moved to the side of the carbon plate 12 adhered to the glass substrate 2 by the negative voltage applied to the glass substrate 2, and adheres to the carbon plate 12. Therefore, the adhesion of the alkali metal to the heater electrode 8 can be prevented, and the scattering of the alkali metal into the chamber can be largely prevented. In addition, the alkali metal partially segregated from the glass substrate 2 scatters into the chamber, but adheres to the surface of the silicon substrate 1 because the silicon plate 6 is adhered to the surface of the silicon substrate 1 to cover the surface. Can be prevented.
【００２６】このように、シリコン基板１の接合面では
ない主表面にシリコン板６を密着させ、シリコン板６を
介して正の電圧を印加し、ガラス基板２の接合面ではな
い主表面にカーボン板１２を密着させ、カーボン板１２
を介して負の電圧を印加するようにしたので、ガラス基
板２から偏析したアルカリ金属の大部分をカーボン板１
２に付着させてヒータ電極８への付着を防止するととも
に、一部飛散したアルカリ金属のシリコン基板１表面へ
の付着をシリコン板６で防止することができるという効
果を奏する。As described above, the silicon plate 6 is brought into close contact with the main surface of the silicon substrate 1 which is not the bonding surface, a positive voltage is applied through the silicon plate 6, and the carbon surface is applied to the main surface of the glass substrate 2 which is not the bonding surface. The plate 12 is brought into close contact with the carbon plate 12
The negative voltage is applied through the substrate, so that most of the alkali metal segregated from the glass substrate 2 is removed from the carbon plate 1.
2 prevents the adhesion to the heater electrode 8 and prevents the partially scattered alkali metal from adhering to the surface of the silicon substrate 1 with the silicon plate 6.
【００２７】図５は本発明の第５の実施の形態の陽極接
合方法を示すための、シリコン基板１とガラス基板２の
断面図である。基本構成は第１の実施の形態と同様であ
るが、シリコン基板１に密着させるシリコン板６の密着
面を粗面化している。それ以外の構成及びアルカリ金属
に対する作用は第１の実施の形態と同様であるので、粗
面化の作用について述べる。FIG. 5 is a sectional view of a silicon substrate 1 and a glass substrate 2 for illustrating an anodic bonding method according to a fifth embodiment of the present invention. The basic configuration is the same as that of the first embodiment, but the contact surface of the silicon plate 6 to be in close contact with the silicon substrate 1 is roughened. The other configuration and the action on the alkali metal are the same as those in the first embodiment, and thus the action of the surface roughening will be described.
【００２８】シリコン基板１の表面には、半導体チップ
として、ピエゾ抵抗４等の素子が形成されるが、素子間
の配線は一般にアルミ等で形成される。特に、シリコン
基板１へのアルカリ金属付着防止のために密着させた導
電体がシリコン板６で、その密着面の表面が境面であれ
ば、陽極接合時にアルミ配線（図示せず）がシリコン板
６に貼付く恐れがある。ここで、シリコン板６のシリコ
ン基板１への密着面を粗面化することによりアルミ配線
の付着を防止することができる。この面粗度は＃８００
〜１５００位がよい。On the surface of the silicon substrate 1, elements such as piezoresistors 4 are formed as semiconductor chips, and wiring between the elements is generally formed of aluminum or the like. In particular, if the conductor adhered to prevent adhesion of alkali metal to silicon substrate 1 is silicon plate 6 and the surface of the adhered surface is a boundary surface, aluminum wiring (not shown) is used during the anodic bonding. 6 may be stuck. Here, adhesion of aluminum wiring can be prevented by roughening the contact surface of the silicon plate 6 to the silicon substrate 1. This surface roughness is # 800
~ 1500 is better.
【００２９】このように、シリコン基板１の接合面では
ない主表面に密着させたシリコン板６の密着面を粗面化
したことにより、第１の実施の形態の効果に加え、シリ
コン基板１に形成されたアルミ配線等のシリコン板６へ
の貼付きを防止することができるという効果を奏する。As described above, by roughening the contact surface of the silicon plate 6 adhered to the main surface other than the joint surface of the silicon substrate 1, in addition to the effect of the first embodiment, This has an effect that sticking of the formed aluminum wiring or the like to the silicon plate 6 can be prevented.
【００３０】以上、本発明の実施の形態を示した。アル
カリ金属付着防止に使用したシリコン板６，９やガラス
板１０やカーボン板１２は、陽極接合の都度、純水等で
洗浄すれば良く、チャンバー内部の清掃は従来より汚染
レベルが低いため、例えば、数十〜百バッチ毎に行う頻
度でよく、管理が容易である。The embodiment of the present invention has been described above. The silicon plates 6, 9 and the glass plate 10 and the carbon plate 12 used for preventing the adhesion of the alkali metal may be washed with pure water or the like each time the anode is joined, and the inside of the chamber is cleaned at a lower contamination level than before. It can be performed every tens to hundreds of batches, and is easy to manage.
【００３１】尚、シリコン基板に半導体圧力センサチッ
プが形成されたものを例にあげたが、これに限定される
ものではない。Although a semiconductor pressure sensor chip formed on a silicon substrate has been described as an example, the present invention is not limited to this.
【００３２】[0032]
【発明の効果】上述の如く、本発明の請求項１記載の発
明によれば、シリコン基板とガラス基板とを重ね合せ、
電圧を印加して前記シリコン基板と前記ガラス基板とを
接合する陽極接合方法において、前記シリコン基板の接
合面ではない主表面に第１の導電体を密着させ、該第１
の導電体を介して正の電圧を印加し、前記ガラス基板の
接合面ではない主表面に負の電圧を印加するようにした
ので、ガラス基板から偏析するアルカリ金属のシリコン
基板表面への付着を防止し、アルカリ金属による悪影響
を低減することのできる陽極接合方法を提供することが
できた。As described above, according to the first aspect of the present invention, a silicon substrate and a glass substrate are overlapped,
In the anodic bonding method of applying a voltage and bonding the silicon substrate and the glass substrate, a first conductor is brought into close contact with a main surface of the silicon substrate which is not a bonding surface, and
A positive voltage is applied through the conductor, and a negative voltage is applied to the main surface of the glass substrate that is not the bonding surface, so that the alkali metal segregating from the glass substrate adheres to the silicon substrate surface. Thus, an anodic bonding method capable of preventing and reducing the adverse effect of an alkali metal can be provided.
【００３３】請求項２記載の発明においては、前記シリ
コン基板の接合面ではない主表面に第１の導電体を密着
させ、該第１の導電体を介して正の電圧を印加し、前記
ガラス基板の接合面ではない主表面に負の電圧を印加す
るようにしたので、ガラス基板から偏析したアルカリ金
属の大部分を第２の導電体に付着させて、周囲への付着
を防止するとともに、一部飛散したアルカリ金属のシリ
コン基板表面への付着を第１の導体板で防止して、ガラ
ス基板から偏析するアルカリ金属による悪影響を低減す
ることができるという効果を奏する。In the invention according to claim 2, a first conductor is brought into close contact with a main surface of the silicon substrate which is not a bonding surface, and a positive voltage is applied through the first conductor to form the glass substrate. Since a negative voltage was applied to the main surface other than the bonding surface of the substrate, most of the alkali metal segregated from the glass substrate was attached to the second conductor to prevent adhesion to the surroundings, The first conductor plate prevents the partially scattered alkali metal from adhering to the surface of the silicon substrate, thereby reducing the adverse effect of the alkali metal segregated from the glass substrate.
【００３４】請求項３記載の発明においては、前記第１
の導電体をシリコン板としたので、容易にアルカリ金属
のシリコン基板への付着を防止することができるいう効
果を奏する。According to the third aspect of the present invention, the first
Since the conductor is a silicon plate, the effect of easily preventing the alkali metal from adhering to the silicon substrate can be obtained.
【００３５】請求項４記載の発明においては、前記第１
の導電体の密着面を粗面化したので、シリコン基板に形
成された配線等が、前記第１の導電体への貼付くことを
防止することができるいう効果を奏する。According to a fourth aspect of the present invention, the first
Since the contact surface of the conductor is roughened, it is possible to prevent wiring or the like formed on the silicon substrate from being attached to the first conductor.
【００３６】請求項５記載の発明においては、前記第２
の導電体をシリコン板としたので、容易にアルカリ金属
の周囲への付着を防止することができるいう効果を奏す
る。In the fifth aspect of the present invention, the second
Since the conductor is made of a silicon plate, it is possible to easily prevent the adhesion of the alkali metal to the surroundings.
【００３７】請求項６記載の発明においては、前記第２
の導電体が、一方の主表面に金属層が形成され、かつ導
電性を有するガラス板であり、該ガラス板の他方の主表
面を、前記ガラス基板の接合面ではない主表面に密着さ
せ、かつ前記ガラス板の金属層側の主表面に負の電圧を
印加するようにしたので、ガラス基板から偏析したアル
カリ金属の大部分をガラス板内の金属層に滞留させて、
周囲への付着をさらに低減させることができるという効
果を奏する。[0037] In the invention according to claim 6, in the above-mentioned second aspect,
The conductor is a glass plate having a metal layer formed on one main surface and having conductivity, and the other main surface of the glass plate is brought into close contact with a main surface that is not a bonding surface of the glass substrate, And since the negative voltage was applied to the main surface of the glass plate on the metal layer side, most of the alkali metal segregated from the glass substrate was retained in the metal layer in the glass plate,
There is an effect that adhesion to the surroundings can be further reduced.
【００３８】請求項７記載の発明においては、前記第２
の導電体をカーボン板としたので、容易かつ安価にアル
カリ金属の周囲への付着を防止することができるいう効
果を奏する。In the seventh aspect of the present invention, the second
Since the conductor is made of a carbon plate, it is possible to easily and inexpensively prevent the adhesion of the alkali metal to the surroundings.
【図１】本発明の第１の実施の形態を示す図である。FIG. 1 is a diagram showing a first embodiment of the present invention.
【図２】本発明の第２の実施の形態を示す図である。FIG. 2 is a diagram showing a second embodiment of the present invention.
【図３】本発明の第３の実施の形態を示す図である。FIG. 3 is a diagram showing a third embodiment of the present invention.
【図４】本発明の第４の実施の形態を示す図である。FIG. 4 is a diagram showing a fourth embodiment of the present invention.
【図５】本発明の第５の実施の形態を示す図である。FIG. 5 is a diagram showing a fifth embodiment of the present invention.
【図６】従来例を示す図である。FIG. 6 is a diagram showing a conventional example.
１ シリコン基板 ２ ガラス基板 ６ シリコン板 ７ 導電板 ８ ヒータ電極 ９ シリコン板 １０ ガラス板 １１ 金属層 １２ カーボン板 １３ 粗面 １４ 電極ピン REFERENCE SIGNS LIST 1 silicon substrate 2 glass substrate 6 silicon plate 7 conductive plate 8 heater electrode 9 silicon plate 10 glass plate 11 metal layer 12 carbon plate 13 rough surface 14 electrode pin
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2F055 AA40 BB20 CC02 DD05 DD07 EE13 FF43 GG01 GG12 4G026 BA12 BA13 BB33 BC01 BF57 BG12 BH06 4G061 BA05 CA01 DA07 DA10 DA24 DA32 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2F055 AA40 BB20 CC02 DD05 DD07 EE13 FF43 GG01 GG12 4G026 BA12 BA13 BB33 BC01 BF57 BG12 BH06 4G061 BA05 CA01 DA07 DA10 DA24 DA32
Claims (7)
せ、電圧を印加して前記シリコン基板と前記ガラス基板
とを接合する陽極接合方法において、前記シリコン基板
の接合面ではない主表面に第１の導電体を密着させ、該
第１の導電体を介して正の電圧を印加し、前記ガラス基
板の接合面ではない主表面に負の電圧を印加することを
特徴とする陽極接合方法。In an anodic bonding method in which a silicon substrate and a glass substrate are overlapped and a voltage is applied to bond the silicon substrate and the glass substrate, a first surface is formed on a main surface other than a bonding surface of the silicon substrate. An anodic bonding method, comprising: bringing a conductor into close contact with each other, applying a positive voltage through the first conductor, and applying a negative voltage to a main surface other than the bonding surface of the glass substrate.
に第２の導電体を密着させ、該第２の導電体を介して負
の電圧を印加することを特徴とする請求項１記載の陽極
接合方法。2. The method according to claim 1, wherein a second conductor is brought into close contact with a main surface of the glass substrate which is not a bonding surface, and a negative voltage is applied through the second conductor. Anodic bonding method.
とを特徴とする請求項１又は請求項２記載の陽極接合方
法。3. The anodic bonding method according to claim 1, wherein the first conductor is a silicon plate.
ことを特徴とする請求項１乃至請求項３のいずれかに記
載の陽極接合方法。4. The anodic bonding method according to claim 1, wherein the contact surface of the first conductor is roughened.
とを特徴とする請求項２記載の陽極接合方法。5. The anodic bonding method according to claim 2, wherein said second conductor is a silicon plate.
属層が形成され、かつ導電性を有するガラス板であり、
該ガラス板の他方の主表面を、前記ガラス基板の接合面
ではない主表面に密着させ、かつ前記ガラス板の金属層
側の主表面に負の電圧を印加することを特徴とする請求
項２記載の陽極接合方法。6. The second conductor is a glass plate having a metal layer formed on one main surface and having conductivity,
3. The method according to claim 2, wherein the other main surface of the glass plate is brought into close contact with a main surface other than the bonding surface of the glass substrate, and a negative voltage is applied to the main surface of the glass plate on the metal layer side. The anodic bonding method described.
ことを特徴とする請求項２記載の陽極接合方法。7. The anodic bonding method according to claim 2, wherein said second conductor is a carbon plate.
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| JP34145499A JP3804371B2 (en) | 1999-11-30 | 1999-11-30 | Anodic bonding method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34145499A JP3804371B2 (en) | 1999-11-30 | 1999-11-30 | Anodic bonding method |
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| Publication Number | Publication Date |
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| JP3804371B2 JP3804371B2 (en) | 2006-08-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216882A (en) * | 2005-02-07 | 2006-08-17 | Seiko Instruments Inc | Dynamic volume sensor, manufacturing method thereof and electronic apparatus |
| JP2007078378A (en) * | 2005-09-12 | 2007-03-29 | Seiko Instruments Inc | Dynamic quantity sensor, electronic equipment, and manufacturing method for dynamic quantity sensor |
| WO2007116905A1 (en) * | 2006-04-04 | 2007-10-18 | Hitachi, Ltd. | Electronic component union, electronic circuit module utilizing the same, and process for manufacturing the same |
| US8133338B2 (en) | 2004-03-23 | 2012-03-13 | Casio Computer Co., Ltd. | Stack structure and method of manufacturing the same |
| JP2014215158A (en) * | 2013-04-25 | 2014-11-17 | ミツミ電機株式会社 | Physical quantity detection element and physical quantity detection device |
| JP2017041520A (en) * | 2015-08-19 | 2017-02-23 | セイコーエプソン株式会社 | Electronic device manufacturing method |
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1999
- 1999-11-30 JP JP34145499A patent/JP3804371B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8133338B2 (en) | 2004-03-23 | 2012-03-13 | Casio Computer Co., Ltd. | Stack structure and method of manufacturing the same |
| JP2006216882A (en) * | 2005-02-07 | 2006-08-17 | Seiko Instruments Inc | Dynamic volume sensor, manufacturing method thereof and electronic apparatus |
| JP4502125B2 (en) * | 2005-02-07 | 2010-07-14 | セイコーインスツル株式会社 | Mechanical quantity sensor, electronic device, and manufacturing method of mechanical quantity sensor |
| JP2007078378A (en) * | 2005-09-12 | 2007-03-29 | Seiko Instruments Inc | Dynamic quantity sensor, electronic equipment, and manufacturing method for dynamic quantity sensor |
| WO2007116905A1 (en) * | 2006-04-04 | 2007-10-18 | Hitachi, Ltd. | Electronic component union, electronic circuit module utilizing the same, and process for manufacturing the same |
| JP2014215158A (en) * | 2013-04-25 | 2014-11-17 | ミツミ電機株式会社 | Physical quantity detection element and physical quantity detection device |
| JP2017041520A (en) * | 2015-08-19 | 2017-02-23 | セイコーエプソン株式会社 | Electronic device manufacturing method |
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| Publication number | Publication date |
|---|---|
| JP3804371B2 (en) | 2006-08-02 |
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