JP2001158645A - Method for anode junction - Google Patents
Method for anode junctionInfo
- Publication number
- JP2001158645A JP2001158645A JP34147199A JP34147199A JP2001158645A JP 2001158645 A JP2001158645 A JP 2001158645A JP 34147199 A JP34147199 A JP 34147199A JP 34147199 A JP34147199 A JP 34147199A JP 2001158645 A JP2001158645 A JP 2001158645A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- silicon substrate
- substrate
- silicon
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体圧力センサ
や半導体加速度センサ等のマイクロ加工センサ、また、
マイクロアクチュエータの等の製造において、半導体
（シリコン）基板とガラス基板とを接合する陽極接合に
関するものである。The present invention relates to a microfabricated sensor such as a semiconductor pressure sensor and a semiconductor acceleration sensor,
The present invention relates to anodic bonding for bonding a semiconductor (silicon) substrate and a glass substrate in manufacturing a microactuator or the like.
【０００２】[0002]
【従来の技術】従来のシリコン基板とガラス基板との陽
極接合方法について図２を用いて説明する。ここでは、
半導体圧力センサが形成されたシリコン基板１を例にあ
げる。シリコン基板１には複数の圧力センサチップが形
成され、圧力センサチップ個々には、圧力により変位す
る肉薄構造のダイヤフラム３及び、ダイヤフラムの変位
を抵抗値変化として検出するピエゾ抵抗４が形成されて
いる。この圧力センサチップの高精度化を図るためにシ
リコン基板１にガラス基板（パイレックスガラス）２を
陽極接合し、その後チップサイズで、個々にダイシング
することにより、ガラス台座付半導体圧力センサを製造
している。尚、半導体圧力センサの場合、ガラス基板２
には、外部の圧力を半導体圧力センサのダイヤフラム２
に導くための圧力導入孔５が設けられている。さらにこ
の従来例の場合、メタルパッケージ（図示せず）に半田
付けを行うための金属層（メタライズ層）９がガラス基
板２に形成されている。2. Description of the Related Art A conventional anodic bonding method between a silicon substrate and a glass substrate will be described with reference to FIG. here,
A silicon substrate 1 on which a semiconductor pressure sensor is formed will be described as an example. A plurality of pressure sensor chips are formed on the silicon substrate 1, and each of the pressure sensor chips is formed with a diaphragm 3 having a thin structure that is displaced by pressure and a piezo resistor 4 that detects displacement of the diaphragm as a change in resistance value. . In order to increase the accuracy of the pressure sensor chip, a glass substrate (Pyrex glass) 2 is anodically bonded to a silicon substrate 1 and then individually diced in a chip size to produce a semiconductor pressure sensor with a glass pedestal. I have. In the case of a semiconductor pressure sensor, the glass substrate 2
The external pressure is applied to the diaphragm 2 of the semiconductor pressure sensor.
Is provided with a pressure introducing hole 5 for guiding the pressure. Further, in the case of this conventional example, a metal layer (metallized layer) 9 for soldering to a metal package (not shown) is formed on the glass substrate 2.
【０００３】陽極接合は、ヒータ電極８と電極ピン１０
により、ガラス基板２側を０Ｖ、シリコン基板１側に約
４００〜約１０００Ｖの直流電圧を印加し、さらに、約
３００〜約５００℃の高温とし、数百グラムの荷重を印
加して行う。また、陽極接合を行うチャンバー（小室，
図示せず）内は真空又は窒素雰囲気である。[0003] The anodic bonding is performed by using a heater electrode 8 and an electrode pin 10.
Thus, a DC voltage of about 400 V to about 1000 V is applied to the glass substrate 2 side and about 400 to about 1000 V to the silicon substrate 1, and a high temperature of about 300 to about 500 ° C. is applied under a load of several hundred grams. In addition, the chamber (small chamber,
(Not shown) is a vacuum or nitrogen atmosphere.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、陽極接
合後、ガラス基板２中に含まれているアルカリ金属（ナ
トリウムＮａ，カリウムＫ等）が、ガラス基板２の金属
層９表面に偏析してくる。このアルカリ金属はヒータ電
極８へ熱拡散するとともに、チャンバー内に飛散し、シ
リコン基板１表面に付着する。また、陽極接合したシリ
コン基板１を大気中に取り出すと、ガラス基板２表面偏
析したアルカリ金属（特にナトリウム）が二酸化炭素及
び酸素と反応し、水に可溶の白色結晶の炭酸ナトリウム
や、水に不溶な黒茶色の酸化ナトリウムが析出する。ヒ
ータ電極８に拡散したアルカリ金属は、真空中で再過熱
すると、その蒸気圧が低いのでチャンバー内に飛散し、
チャンバー内部を汚染する。シリコン基板１表面に付着
したアルカリ金属は、半導体チップを構成しているピエ
ゾ抵抗４等や、このピエゾ抵抗４形成部のＰＮジャンク
ションへ拡散し、リーク電流の増加や耐圧低下を引き起
こす。また、半導体チップがＩＣ等のＭＯＳトランジス
タの場合、そのしきい値変動等を引き起こす。However, after anodic bonding, alkali metals (sodium Na, potassium K, etc.) contained in the glass substrate 2 segregate on the surface of the metal layer 9 of the glass substrate 2. The alkali metal thermally diffuses into the heater electrode 8, scatters into the chamber, and adheres to the surface of the silicon substrate 1. When the anodic-bonded silicon substrate 1 is taken out to the atmosphere, the alkali metal (especially sodium) segregated on the surface of the glass substrate 2 reacts with carbon dioxide and oxygen, and is dissolved in water-soluble white crystalline sodium carbonate or water. Insoluble black-brown sodium oxide precipitates. When the alkali metal diffused into the heater electrode 8 is reheated in a vacuum, the alkali metal scatters in the chamber because of its low vapor pressure,
Contaminates the chamber interior. The alkali metal adhering to the surface of the silicon substrate 1 diffuses into the piezoresistor 4 and the like constituting the semiconductor chip and the PN junction of the piezoresistor 4 forming portion, causing an increase in leak current and a decrease in withstand voltage. In addition, when the semiconductor chip is a MOS transistor such as an IC, the threshold value of the semiconductor chip varies.
【０００５】このように、ガラス基板２の金属層９表面
から偏析したアルカリ金属によりシリコン基板１に形成
された半導体チップの特性に悪影響を及ぼすとともに、
チャンバー内部がアルカリ金属で汚染され、チャンバー
内部やヒータ電極８の清掃が必要となる。この清掃作業
は手間がかかり、大きな作業ロスとなる。As described above, the alkali metal segregated from the surface of the metal layer 9 of the glass substrate 2 adversely affects the characteristics of the semiconductor chip formed on the silicon substrate 1, and
The inside of the chamber is contaminated with the alkali metal, and the inside of the chamber and the heater electrode 8 need to be cleaned. This cleaning work is troublesome and results in a large work loss.
【０００６】そこで、これを防止するために、ガラス基
板２の金属層９表面とヒータ電極８との間に導電体であ
るシリコン板１１を挟み、偏析したアルカリ金属をこの
シリコン板１１に付着させ、ヒータ電極８への付着を防
止している。しかし、一部ガラス基板２から偏析したア
ルカリ金属は、チャンバー内に飛散し、シリコン基板１
の表面に付着する。また、メタルパッケージへの半田付
けを行うために形成された金属層９は、ガラス基板２内
部側からＴｉ／Ｎｉ／Ａｕ，Ｔｉ／Ｃｒ／Ａｕ，Ｔｉ／
Ｐｔ／Ａｕ，Ｃｔ／Ｐｔ／Ａｕ等のようにスパッタリン
グにより積層されている。ここで、半田付けの目的から
最表面層がＡｕである必要がある。しかしこのＡｕがシ
リコン板１１とＡｕ−Ｓｉ共晶結合を起こし、ガラス基
板２（金属層９）とシリコン板１１が接合してしまうと
いう問題があった。Therefore, in order to prevent this, a silicon plate 11 which is a conductor is sandwiched between the surface of the metal layer 9 of the glass substrate 2 and the heater electrode 8 and segregated alkali metal is adhered to the silicon plate 11. In addition, adhesion to the heater electrode 8 is prevented. However, the alkali metal partially segregated from the glass substrate 2 scatters into the chamber, and the silicon substrate 1
Adheres to the surface of Further, the metal layer 9 formed for soldering to the metal package is formed of Ti / Ni / Au, Ti / Cr / Au, Ti /
Pt / Au, Ct / Pt / Au, etc. are laminated by sputtering. Here, for the purpose of soldering, the outermost surface layer needs to be Au. However, there is a problem that this Au causes an Au-Si eutectic bond with the silicon plate 11 and the glass substrate 2 (metal layer 9) and the silicon plate 11 are bonded.
【０００７】本発明は、上記事由に鑑みてなしたもの
で、その目的とするところは、ガラス基板から偏析する
アルカリ金属による悪影響を低減することができるとと
もに、アルカリ金属のヒータ電極への付着を防止するた
めに、金属層を有するガラス基板との間に介在させた部
材（導電体）の金属層への付着を防止することができる
陽極接合方法を提供することにある。The present invention has been made in view of the above circumstances, and has as its object to reduce the adverse effect of alkali metal segregated from a glass substrate and to prevent the adhesion of alkali metal to a heater electrode. An object of the present invention is to provide an anodic bonding method capable of preventing a member (conductor) interposed between a glass substrate having a metal layer and a glass substrate having the metal layer from being attached to the metal layer.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、請求項１記載の発明は、シリコン基板と、一主表面
に金属層が形成されたガラス基板とを、該ガラス基板の
もう一方の主表面と前記シリコン基板とを対向させて重
ね合せ、電圧を印加して接合する陽極接合方法におい
て、前記シリコン基板の接合面ではない主表面に導電体
を密着させ、該導電体を介して正の電圧を印加し、前記
ガラス基板の金属層側の主表面にカーボンの板を密着さ
せ、該カーボンの板を介して負の電圧を印加することを
特徴とするものである。In order to achieve the above object, according to the first aspect of the present invention, a silicon substrate and a glass substrate having a metal layer formed on one main surface are provided on the other side of the glass substrate. In the anodic bonding method in which the main surface of the silicon substrate and the silicon substrate are opposed to each other, and a voltage is applied and bonded, a conductor is brought into close contact with a main surface that is not the bonding surface of the silicon substrate, and through the conductor. A positive voltage is applied, a carbon plate is brought into close contact with the main surface of the glass substrate on the metal layer side, and a negative voltage is applied through the carbon plate.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態に係る
陽極接合方法について図１にもとづき説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An anodic bonding method according to an embodiment of the present invention will be described below with reference to FIG.
【００１０】図１は本発明の実施の形態の陽極接合方法
を示すための、シリコン基板１とガラス基板２の断面図
である。従来例と同様に、シリコン基板１に半導体圧力
センサチップが形成されたものを例にあげる。シリコン
基板１には複数の半導体圧力センサチップが形成され、
半導体圧力センサチップ個々には、圧力により変位する
肉薄構造のダイヤフラム３及び、ダイヤフラムの変位を
抵抗値変化として検出するピエゾ抵抗４が形成されてい
る。この圧力センサチップの高精度化を図るためにシリ
コン基板１にガラス基板（パイレックスガラス）２を陽
極接合し、その後チップサイズで、個々にダイシングす
ることにより、ガラス台座付圧力センサを製造してい
る。尚、半導体圧力センサの場合ガラス基板２には、外
部の圧力を半導体圧力センサのダイヤフラム２に導くた
めの圧力導入孔５が設けられている。さらに、メタルパ
ッケージ（図示せず）に半田付けを行うための金属層
（メタライズ層）９がガラス基板２に形成されている。FIG. 1 is a sectional view of a silicon substrate 1 and a glass substrate 2 for illustrating an anodic bonding method according to an embodiment of the present invention. Similar to the conventional example, an example in which a semiconductor pressure sensor chip is formed on a silicon substrate 1 will be described. A plurality of semiconductor pressure sensor chips are formed on the silicon substrate 1,
Each of the semiconductor pressure sensor chips is formed with a diaphragm 3 having a thin structure displaced by pressure and a piezo resistor 4 for detecting displacement of the diaphragm as a change in resistance value. In order to increase the precision of the pressure sensor chip, a glass substrate (Pyrex glass) 2 is anodically bonded to a silicon substrate 1 and then individually diced in a chip size to manufacture a pressure sensor with a glass pedestal. . In the case of a semiconductor pressure sensor, the glass substrate 2 is provided with a pressure introducing hole 5 for guiding external pressure to the diaphragm 2 of the semiconductor pressure sensor. Further, a metal layer (metallized layer) 9 for soldering to a metal package (not shown) is formed on the glass substrate 2.
【００１１】ここで、シリコン基板１において、ガラス
基板２との接合面ではない主表面（図中シリコン基板１
の上面）に導電体であるシリコン板６を密着させる。こ
のシリコン板６の厚さ及びシート抵抗は、例えば厚さは
約０．３〜０．５ｍｍで、シート抵抗は０．１〜約６Ω
ｃｍである。また、ガラス基板２において、シリコン基
板１との接合面ではない主表面（図中ガラス基板２の下
面、金属層９側）に板状の導電体であるカーボン板７を
密着させる。そして、シリコン板６に電極ピン１０を接
触させて正の電圧を印加し、カーボン板７にヒータ電極
８を接触させて負の電圧を印加する。つまり、シリコン
基板１と電極ピン１０間にシリコン板６を介在させ、そ
して、ガラス基板２とヒータ電極８間にカーボン板７を
介在させて、正の電圧及び負の電圧を印加する。Here, the main surface of the silicon substrate 1 which is not the bonding surface with the glass substrate 2 (the silicon substrate 1 in the figure)
A silicon plate 6 as a conductor is brought into close contact with the upper surface of the substrate. The thickness and sheet resistance of the silicon plate 6 are, for example, about 0.3 to 0.5 mm and the sheet resistance is 0.1 to about 6Ω.
cm. In the glass substrate 2, a carbon plate 7, which is a plate-shaped conductor, is adhered to a main surface (the lower surface of the glass substrate 2, the metal layer 9 side in the figure) which is not a bonding surface with the silicon substrate 1. Then, a positive voltage is applied by bringing the electrode pins 10 into contact with the silicon plate 6, and a negative voltage is applied by bringing the heater electrode 8 into contact with the carbon plate 7. That is, a positive voltage and a negative voltage are applied by interposing the silicon plate 6 between the silicon substrate 1 and the electrode pins 10 and interposing the carbon plate 7 between the glass substrate 2 and the heater electrode 8.
【００１２】陽極接合で電圧を電極ピン１０及びヒータ
電極８で電圧を印加すると、ガラス基板２（パイレック
スガラス）に含まれているアルカリ金属（イオン）は、
ヒータ電極８に印加された負の電圧によりガラス基板２
に密着されたカーボン板７側に移動し、カーボン板７に
付着する。よって、ヒータ電極８へのアルカリ金属の付
着を防止することができるとともに、チャンバー内への
アルカリ金属の飛散も大部分防止することができる。ま
た、これ以外に一部ガラス基板２から偏析したアルカリ
金属は、チャンバー内に飛散するが、シリコン基板１表
面にシリコン板６を密着させてカバーしているので、シ
リコン基板１の表面への付着を防止することができる。
また、ガラス基板２に密着させた導電体がシリコン板で
はなく、カーボン板であるので、ガラス基板２の金属層
９の最表面のＡｕによるＡｕ−Ｓｉ共晶接合を起こすこ
とがなく、ガラス基板２（金属層９）と密着させた部材
（導電体）との接合を防止することができる。When a voltage is applied between the electrode pin 10 and the heater electrode 8 by anodic bonding, the alkali metal (ion) contained in the glass substrate 2 (pyrex glass) becomes
The negative voltage applied to the heater electrode 8 causes the glass substrate 2
Move to the side of the carbon plate 7 that is in close contact with the substrate, and adhere to the carbon plate 7. Therefore, the adhesion of the alkali metal to the heater electrode 8 can be prevented, and the scattering of the alkali metal into the chamber can be largely prevented. In addition, the alkali metal partially segregated from the glass substrate 2 scatters into the chamber, but adheres to the surface of the silicon substrate 1 because the silicon plate 6 is adhered to the surface of the silicon substrate 1 to cover the surface. Can be prevented.
In addition, since the conductor adhered to the glass substrate 2 is not a silicon plate but a carbon plate, Au-Si eutectic bonding due to Au on the outermost surface of the metal layer 9 of the glass substrate 2 does not occur, and 2 (metal layer 9) can be prevented from being bonded to a member (conductor) closely adhered thereto.
【００１３】このように、シリコン基板１の接合面では
ない主表面にシリコン板６を密着させ、シリコン板６を
介して正の電圧を印加し、ガラス基板２の接合面ではな
い主表面にカーボン板７を密着させ、カーボン板７を介
して負の電圧を印加するようにしたので、ガラス基板２
から偏析したアルカリ金属の大部分をカーボン板７に付
着させてヒータ電極８への付着を防止するとともに、一
部飛散したアルカリ金属のシリコン基板１表面への付着
をシリコン板６で防止することができるという効果を奏
する。さらに、ガラス基板２に密着させた導電体がカー
ボン板であるので、ガラス基板２の金属層９の最表面の
ＡｕによるＡｕ−Ｓｉ共晶接合を起こすことがなく、ガ
ラス基板（金属層）と介在させた部材（導電体）との接
合を防止することができるという効果を奏する。As described above, the silicon plate 6 is brought into close contact with the main surface of the silicon substrate 1 which is not the bonding surface, a positive voltage is applied through the silicon plate 6, and the carbon surface is applied to the main surface of the glass substrate 2 which is not the bonding surface. Since the plate 7 was brought into close contact and a negative voltage was applied through the carbon plate 7, the glass substrate 2
Most of the alkali metal segregated from the substrate is prevented from adhering to the heater electrode 8 by adhering to the carbon plate 7 and adhesion of the partially scattered alkali metal to the surface of the silicon substrate 1 is prevented by the silicon plate 6. It has the effect of being able to. Furthermore, since the conductor closely adhered to the glass substrate 2 is a carbon plate, Au-Si eutectic bonding due to Au on the outermost surface of the metal layer 9 of the glass substrate 2 does not occur, and the glass substrate (metal layer) This has the effect of preventing joining with the interposed member (conductor).
【００１４】以上、本発明の実施の形態を示した。アル
カリ金属付着防止に使用したシリコン板６，やカーボン
板７は、陽極接合の都度、純水等で洗浄すれば良く、チ
ャンバー内部の清掃は従来より汚染レベルが低いため、
例えば、数十〜百バッチ毎に行う頻度でよく、管理が容
易である。The embodiment of the present invention has been described above. The silicon plate 6 and the carbon plate 7 used for preventing the adhesion of the alkali metal may be washed with pure water or the like each time the anode is joined, and the inside of the chamber is cleaned at a lower contamination level than before.
For example, it may be performed every tens to hundreds of batches, and management is easy.
【００１５】尚、シリコン基板に半導体圧力センサチッ
プが形成されたものを例にあげたが、これに限定される
ものではない。またシリコン基板に密着された導電板も
シリコン板に限定されない。Although an example in which a semiconductor pressure sensor chip is formed on a silicon substrate has been described, the present invention is not limited to this. Further, the conductive plate in close contact with the silicon substrate is not limited to the silicon plate.
【００１６】[0016]
【発明の効果】上述の如く、本発明の請求項１記載の発
明によれば、シリコン基板と、一主表面に金属層が形成
されたガラス基板とを、該ガラス基板のもう一方の主表
面と前記シリコン基板とを対向させて重ね合せ、電圧を
印加して接合する陽極接合方法において、前記シリコン
基板の接合面ではない主表面に導電体を密着させ、該導
電体を介して正の電圧を印加し、前記ガラス基板の金属
層側の主表面にカーボンの板を密着させ、該カーボンの
板を介して負の電圧を印加するようにしたので、アルカ
リ金属による悪影響を低減することのでき、アルカリ金
属のヒータ電極への付着を防止するために、金属層を有
するガラス基板との間に介在させた部材（導電体）の金
属層への付着を防止することができる陽極接合方法を提
供することができた。As described above, according to the first aspect of the present invention, a silicon substrate and a glass substrate having a metal layer formed on one main surface are connected to the other main surface of the glass substrate. In the anodic bonding method in which the silicon substrate is opposed to the silicon substrate, and a voltage is applied thereto, a conductor is brought into close contact with a main surface of the silicon substrate which is not a bonding surface, and a positive voltage is applied through the conductor. Is applied, a carbon plate is brought into close contact with the main surface of the glass substrate on the metal layer side, and a negative voltage is applied through the carbon plate, so that the adverse effect of the alkali metal can be reduced. In order to prevent an alkali metal from adhering to a heater electrode, an anode bonding method capable of preventing a member (conductor) interposed between a glass substrate having a metal layer and the metal layer from adhering to the metal layer is provided. Can .
【図１】本発明の第１の実施の形態を示す図である。FIG. 1 is a diagram showing a first embodiment of the present invention.
【図２】従来例を示す図である。FIG. 2 is a diagram showing a conventional example.
１ シリコン基板 ２ ガラス基板 ６ シリコン板 ７ カーボン板 ８ ヒータ電極 ９ 金属層 １０ 電極ピン １１ シリコン板 Reference Signs List 1 silicon substrate 2 glass substrate 6 silicon plate 7 carbon plate 8 heater electrode 9 metal layer 10 electrode pin 11 silicon plate
Claims (1)
成されたガラス基板とを、該ガラス基板のもう一方の主
表面と前記シリコン基板とを対向させて重ね合せ、電圧
を印加して接合する陽極接合方法において、前記シリコ
ン基板の接合面ではない主表面に導電体を密着させ、該
導電体を介して正の電圧を印加し、前記ガラス基板の金
属層側の主表面にカーボンの板を密着させ、該カーボン
の板を介して負の電圧を印加することを特徴とする陽極
接合方法。1. A silicon substrate and a glass substrate having a metal layer formed on one main surface are overlapped with the other main surface of the glass substrate facing the silicon substrate, and a voltage is applied. In the anodic bonding method for bonding, a conductor is brought into close contact with the main surface of the silicon substrate which is not the bonding surface, a positive voltage is applied through the conductor, and carbon is applied to the main surface of the glass substrate on the metal layer side. An anodic bonding method, wherein the plates are brought into close contact with each other, and a negative voltage is applied through the carbon plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34147199A JP3951529B2 (en) | 1999-11-30 | 1999-11-30 | Anodic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34147199A JP3951529B2 (en) | 1999-11-30 | 1999-11-30 | Anodic bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001158645A true JP2001158645A (en) | 2001-06-12 |
| JP3951529B2 JP3951529B2 (en) | 2007-08-01 |
Family
ID=18346329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34147199A Expired - Fee Related JP3951529B2 (en) | 1999-11-30 | 1999-11-30 | Anodic bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3951529B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216882A (en) * | 2005-02-07 | 2006-08-17 | Seiko Instruments Inc | Dynamic volume sensor, manufacturing method thereof and electronic apparatus |
| US8133338B2 (en) | 2004-03-23 | 2012-03-13 | Casio Computer Co., Ltd. | Stack structure and method of manufacturing the same |
-
1999
- 1999-11-30 JP JP34147199A patent/JP3951529B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8133338B2 (en) | 2004-03-23 | 2012-03-13 | Casio Computer Co., Ltd. | Stack structure and method of manufacturing the same |
| JP2006216882A (en) * | 2005-02-07 | 2006-08-17 | Seiko Instruments Inc | Dynamic volume sensor, manufacturing method thereof and electronic apparatus |
| JP4502125B2 (en) * | 2005-02-07 | 2010-07-14 | セイコーインスツル株式会社 | Mechanical quantity sensor, electronic device, and manufacturing method of mechanical quantity sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3951529B2 (en) | 2007-08-01 |
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