JP2001155992A - System for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a system for processing substrate in which temperature control of processing liquid supply units or cooling units for processing substrates in the vicinity of normal temperature can be performed precisely while saving the space. SOLUTION: The system for processing substrate is sectioned, on the opposite sides of a transfer stage TRS, into first regions 21, 31 for processing an wafer W in the vicinity of normal temperature and second regions 22, 32 for heating the wafer W. Processing units can be disposed entirely on the four sides around first carrying units 14, 24 and additional processing units can be disposed on the three sides around second carrying units 15, 25. The remaining one side can be utilized for delivering the wafer W to the outside.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention belongs to the technical field of, for example, semiconductor device manufacturing.

[0002]

2. Description of the Related Art In a photoresist process in a semiconductor device manufacturing process, for example, a semiconductor wafer (hereinafter, referred to as a semiconductor wafer) is used.
It is called "wafer". ), A resist solution is applied to the surface to form a resist film, and a developing solution is supplied to the wafer after the pattern is exposed to perform development processing. In performing such a series of processing, a coating and developing apparatus has conventionally been used.

The coating and developing apparatus includes a cooling unit for cooling the wafer, a heating unit for heating the wafer, a resist coating unit for coating the wafer with a resist solution, and a developing unit for developing the wafer. Of processing units are provided. In order to make the entire coating and developing apparatus compact, a plurality of heat treatment units and cooling treatment units are mixed to form a heat treatment unit group that is stacked in multiple stages. In this case, a heat treatment unit is arranged above the heat treatment unit group and a cooling treatment unit is arranged below the heat treatment unit group, thereby preventing heat interference in the heat treatment unit group. Further, in such a coating and developing processing apparatus, a heat treatment unit group is arranged near the resist coating unit and the developing processing unit, and the heat processing units are collectively arranged together with the transfer device, thereby achieving further space saving of the coating and developing processing apparatus. .

[0004]

When the diameter of a wafer increases, all the processing units also increase in size. Therefore, in order to save space, it is necessary to further increase the arrangement of the processing units.

[0005] However, when the size of the heat treatment unit is increased, the amount of heat of the heat treatment unit also increases. Therefore, if the heat treatment apparatus is disposed near one of the other processing units as one processing unit in the heat treatment unit group as in the past, another processing unit that performs processing on the wafer near normal temperature, For example, there is a possibility that temperature control in a resist coating device, a cooling processing unit, or the like cannot be performed accurately. Then, when the temperature control is disturbed in these processing units, there arises a problem that the thickness of the resist film changes.

[0006] On the other hand, recently, demands for space saving have been increasing.

The present invention has been made in view of such circumstances, and it is possible to precisely control the temperature in a processing liquid supply unit and a cooling processing unit for performing processing on a substrate at about normal temperature, and further save space. It is an object of the present invention to provide a substrate processing apparatus capable of realizing image processing.

[0008]

In order to solve the above-mentioned problems, a substrate processing apparatus according to the present invention is provided with a transfer table for transferring a substrate, and is arranged so as to sandwich the transfer table from before and after, and transfers the substrate. A first transfer device, a second transfer device, and a cooling processing unit that is disposed to sandwich the first transfer device between the transfer table and cools a substrate; A processing liquid supply unit disposed on a side portion for supplying a processing liquid to the substrate;
And a heat treatment unit disposed on the side of the transfer device for heating the substrate.

According to the present invention, the substrate includes a cooling processing unit and a processing liquid supply unit, a first region for performing processing on the substrate at about normal temperature, and a heating processing unit with the transfer table interposed therebetween. On the other hand, it is divided into a second region for performing a heat treatment, and the first region and the second region can be separated at least by the width of the transfer table. Thus, thermal interference received by the processing liquid supply unit and the cooling processing unit for performing processing on the substrate from the second region including the heating processing unit can be minimized. Therefore, it is possible to precisely control the temperature in the processing liquid supply unit and the cooling processing unit for performing processing on the substrate at around normal temperature. Further, processing units and the like can be arranged on all four sides around the first transfer device, and further, processing units and the like can be arranged on three sides around the second transfer device. Can be used for transferring substrates to and from the outside, so that processing units and the like can be arranged at a high density. Therefore, space saving can be realized.

In the substrate processing apparatus of the present invention, the processing liquid supply units are stacked in multiple stages, and the first transfer device is capable of accessing each of the processing liquid supply units stacked in multiple stages. It is characterized by. Thus, the processing liquid supply units can be arranged at a high density, and space saving can be realized.

[0011] The substrate processing apparatus of the present invention is provided with a transfer unit for transferring a substrate to and from the outside on the side opposite to the first transfer device, which is arranged so as to be stacked with the cooling processing unit. Features. This allows
A special area for transferring the substrate between the first transfer device and the outside is not required, and space can be saved.

[0012] The substrate processing apparatus of the present invention comprises a first clean air supply section for supplying clean air to a first area constituted by the first transfer device, the cooling processing unit and the processing liquid supply unit. , The delivery table, the second
And a second clean air supply unit for supplying clean air to a second region formed by the transfer device and the heat treatment unit, and only the first clean air supply unit supplies clean air to a predetermined area. Characterized in that it has a temperature control device for controlling the temperature to a predetermined temperature.

According to the present invention, since the temperature control device is not required in the second clean air supply unit for supplying clean air to the second area, the cost of the device can be reduced, and the temperature control range can be reduced. Because of the limitation, the temperature management in the first region can be performed more precisely.

[0014] The substrate processing apparatus of the present invention comprises a first region and a transfer table formed by the first transfer device, the cooling processing unit and the processing liquid supply unit, the transfer table, the second transfer device, and the heating device. A first clean air supply unit for supplying clean air to the first region, the first clean air supply unit being divided into a second region configured by a processing unit;
The clean air supply unit is configured to exhaust gas from a lower portion of the first region, circulate the exhausted gas, and blow out a temperature-controlled gas from an upper portion of the first region. It is characterized by having a passage for circulating the gas exhausted from the lower part of the first area to the upper part so as to separate the first area from the second area.

In the present invention, the passage having the above structure functions as a heat insulating means between the first region and the second region. In addition, since the gas is circulated in the passage, which is the heat insulating means, heat does not accumulate in the passage, and functions as an extremely good heat insulating means. Therefore, according to the present invention, the passage having the above configuration prevents thermal interference from the second region to the first region, and performs temperature control in the first region for performing processing on the substrate at around normal temperature. Can be performed very precisely.

The substrate processing apparatus according to the present invention includes a first region and a transfer table formed by the first transfer device, the cooling processing unit and the processing liquid supply unit, the transfer table, the second transfer device, and the heating device. It is characterized in that it is divided into a second region constituted by a processing unit, and a heat insulating wall is provided so as to separate the first region and the second region.

In the present invention, the heat insulating wall is moved from the second area to the first area.
Since the thermal interference to the region is prevented, the temperature control in the first region for processing the substrate at around normal temperature can be performed very precisely.

[0018]

Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 to 5 are views showing a coating and developing treatment system according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 4 is a view as viewed in the direction of the arrow BB in FIG. 1, and FIG. 4 is a view as viewed in the direction of the arrow CC in FIG.

As shown in FIG. 1, the coating and developing system 1 carries, for example, 25 wafers W into and out of the coating and developing system 1 from the outside in cassette units.
A cassette station 2 for loading / unloading wafers W into / from the cassette C;
A first processing station 3 in which various single-wafer processing units for performing predetermined processing are arranged in multiple stages, and a first station 3 disposed adjacent to the first processing station 3 are substantially similar to the first processing station 3. A second processing station 4 having a similar configuration and an interface unit 5 for transferring a wafer W between an exposure apparatus (not shown) disposed adjacent to the second processing station 4 are integrated. Is connected.

At the cassette station 2, a plurality of cassettes C are positioned at the positions of the positioning projections 10 a on the cassette mounting table 10 in the X direction (the vertical direction in FIG. 1) with the entrance of the wafer W toward the processing station 3. It can be placed in a line along the line. The wafer transfer body 11 movable in the arrangement direction of the cassette C (X direction) and the arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction) is movable along the transfer path 12. , Each of the cassettes C can be selectively accessed.

The wafer carrier 11 is also configured to be rotatable in the θ direction, so that it can access an alignment unit in the first processing station 3 described later.

In the first processing station 3, a transfer table (TRS) for transferring the wafer W is provided substantially at the center thereof.
Are arranged in a multi-tiered delivery table group 13,
The wafer W is sandwiched from the front and rear of the transfer table group 13.
Transport device 14 and second transport device 15 for transporting
Is arranged.

In the first processing station 3, cooling processing units (CPL) for cooling the wafer W are stacked in multiple stages so as to sandwich the first transfer device 14 with the transfer table group 13. The cooling processing unit group 16 is disposed. Further, on one side of the first transfer device 14, the wafer W is placed on a spin chuck in a cup to apply an antireflection film, and the wafer W is subjected to an antireflection film coating process. An anti-reflection film coating unit group 17 in which coating units (BCT) are stacked in multiple stages is arranged. On the other side of the first transfer device 14, the wafer W is placed on a spin chuck in a cup and a resist solution is applied. A resist coating unit group 18 in which resist coating units (CT) that apply and perform a resist coating process on the wafer W are stacked in multiple stages is arranged. Then, the first transfer device 14, the cooling processing unit group 16, the antireflection film coating unit group 17, and the resist coating unit group 18 form a first region 21 for performing processing on the wafer W at normal temperature. ing.

On the other hand, on both sides of the second transfer device 15,
Heat processing unit groups 19 and 20 in which heat processing units (HP) for heating the wafer W are stacked in multiple stages are arranged. The second transfer device 15 and the heat processing unit groups 19 and 20 form a second region 22 for performing a heat process on the wafer W.

Similarly, in the second processing station 4,
A transfer table group 23 in which a transfer table (TRS) for transferring the wafer W is stacked in a multi-stage is disposed substantially at the center thereof. A transport device 24 and a second transport device 25 are arranged.

In the second processing station 4, cooling processing units (CPL) for cooling the wafer W are stacked in multiple stages so as to sandwich the first transfer device 24 with the transfer table group 23. The cooling processing unit group 26 is disposed. Further, on both sides of the first transfer device 24, a development processing unit (DEV) for supplying a developing solution by placing the wafer W on a spin chuck in a cup and performing a developing process on the wafer W is provided in multiple stages. Are arranged. The processing unit groups 27 and 28 are stacked. The first transfer device 24, the cooling processing unit group 26, and the developing processing unit groups 27 and 28 form a first region 31 for processing the wafer W at normal temperature.

On the other hand, on both sides of the second transfer device 25,
Heat processing unit groups 29 and 30 in which heat processing units (HP) for heating the wafer W are stacked in multiple stages are arranged. The second transfer device 25 and the heat processing unit groups 29 and 30 form a second region 32 for performing a heat process on the wafer W.

In the interface section 5, a peripheral exposure device 34 is arranged on the back side, and a wafer transfer body 35 which is vertically movable and rotatable in the θ direction is arranged on the front side. ing. The wafer carrier 35 is configured to be able to access an alignment unit, a peripheral exposure device 34, and an exposure device (not shown), which will be described later, in the second processing station 4.

As shown in FIG. 3, in the above-mentioned cooling processing unit group 16 in the first processing station 3, an alignment unit (ALI) for positioning the wafer W is provided.
M) and seven cooling processing units (CPL) are stacked in, for example, eight stages from the bottom. The wafer W can be transferred to and from the alignment unit (ALIM) from both the wafer carrier 11 and the first carrier 14. Thereby, the first transport device 1
A special area for transferring the wafer W between the cassette processing station 4 and the external cassette station 2 as viewed from the first processing station 3 becomes unnecessary, and space saving can be realized. The cooling processing unit group 26 in the second processing station 4 has the same configuration, and the alignment processing unit (ALIM) in the cooling processing unit group 26 has the same configuration as the first processing station 3.
The wafer W can be transferred from both the second transfer device 15 and the first transfer device 24 in the second processing station 4.

As shown in FIG. 4, in the above-described anti-reflection film coating unit group 17 in the first processing station 3, anti-reflection film coating units (BCT) are stacked in three stages. In the above-described resist coating unit group 18 in the processing station 3, the resist coating units (CT) are stacked in three stages. The first transport device 14 can access each unit in the antireflection film coating unit group 17 and the resist coating unit group 18 in addition to each unit in the cooling processing unit group 16. In the development processing unit groups 27 and 28 in the second processing station 4, development processing units (DEVs) are stacked in two stages, and similar access is possible.

As shown in FIG. 5, in the heat processing unit groups 19 and 20 of the first processing station 3, the heat processing units (HP) are stacked in eight stages, and the second transfer device 15 Access to the unit is allowed. Also in the heat processing unit groups 29 and 30 of the second processing station 4, the heat processing units (HP) are stacked in eight stages, respectively, and the second transfer device 25 can access these units. ing.

FIG. 6 shows the first processing station 3 described above.
FIG. 4 is a cross-sectional view illustrating a configuration of a delivery table group 13 in FIG.

In the transfer table group 13, the transfer table (TR
S) are stacked in two stages. Each delivery stand (TR
S) are openings 41 and 42 for transferring the wafer W between the first transfer device 14 and the second transfer device 15.
And a transfer plate 45 provided with about three support pins 44 at substantially the center of the housing 43.
Is arranged. The transfer table group 23 in the second processing station 4 has the same configuration.

FIG. 7 shows the first and second transfer units 14, 15, 2 at the first and second processing stations 3, 4.
It is a perspective view which shows the structure of 4 and 25, It is vertically movable (Z direction) inside the cylindrical support body 53 which consists of the integral wall parts 51 and 52 which are mutually connected by the upper end and the lower part, and which opposes. The wafer transfer means 54 is provided. The cylindrical support 53 is connected to a rotating shaft of a motor 55.
With the rotation driving force of the above, it rotates integrally with the wafer transfer means 54 about the rotation axis. Therefore, the wafer transfer means 54 is rotatable in the θ direction.

On the transfer base 56 of the wafer transfer means 54, a plurality of, for example, two tweezers 57, 58 for holding the wafer W are provided vertically. Each tweezers 5
7 and 58 have basically the same configuration, and have a shape and size that allow them to pass through the side opening between the two walls 51 and 52 of the tubular support 53. In addition, each tweezers 5
Reference numerals 7 and 58 can be freely moved in the front-rear direction by a motor (not shown) built in the transfer base 56.

As shown in FIGS. 1 and 2, the antireflection film coating unit group 17 in the first processing station 3
On the heat treatment unit groups 19, 20, 29, 30 side of the development processing unit groups 27, 28 in the resist coating unit group 18 and the second processing station 4, respectively, a heat insulating wall 61 and first regions 21, 31, which will be described later. 62 for circulating the gas exhausted from the lower part of the upper part to the upper part
Is arranged. That is, the heat insulating wall 61 and the passage 62
First regions 21, 31 and second regions 22, 32, respectively
It is arranged so as to divide between. The development processing unit group 27 in the second processing station 4
A heat insulating wall 61 is also provided on the first processing station 3 side.

At the top of the coating and developing system 1,
A first clean air supply unit 63 for supplying clean air temperature-controlled to the first regions 21 and 31 from above,
And a second clean air supply unit 64 that supplies clean air to the regions 22 and 32 from above.

The first clean air supply section 63 is, for example, F
It has a FU (fan filter unit) and a temperature control device for adjusting the temperature and humidity, etc., and flows in through a passage 62 for circulating gas exhausted from the lower part of the first regions 21 and 31 to the upper part. Clean air from which particles and the like have been removed by adjusting the temperature and humidity from the gas thus obtained is supplied to each unit in the first regions 21 and 32 via the passage 65.

On the other hand, the second clean air supply section 64 includes, for example, an FFU (fan filter unit), etc.
Clean air, which is obtained by removing particles and the like from the gas flowing in through a passage (not shown) for circulating the gas exhausted from the lower part of the second area to the upper part, is supplied to each heat treatment unit (HP). .

In the first regions 21 and 31, it is necessary to control the temperature to room temperature, whereas in the second regions 22 and 32, such a temperature control is unnecessary. Accordingly, the supply of the clean air to the first regions 21 and 31 and the second
The supply of the clean air to the regions 22 and 32 is performed separately, and the temperature of only the clean air to the first regions 21 and 31 is controlled, thereby reducing the cost of the temperature control device. In addition, temperature control for the first regions 21 and 31 can be performed more precisely.

The following mechanism can be used as the temperature control mechanism of the first clean air supply unit 63. That is, in the first clean air supply unit 63, a new gas having a temperature lower than the temperature of the air supplied to each of the coating processing units (BCT, DEV) and the first regions 21, 31
The temperature of the clean air may be adjusted to a desired temperature by mixing the gas exhausted from the lower part of the gas with the gas that has passed through the passage 62.

In the first regions 21 and 31,
The application unit requires humidity management in addition to temperature management, whereas the cooling processing unit does not require humidity management. Therefore, means for supplying clean air to the coating system unit and means for supplying clean air to the cooling processing unit are separately provided, and only the clean air for the coating system unit is controlled in humidity. If
The cost reduction of the temperature control device and the effect of precision temperature control can be further enhanced.

As shown in FIGS. 1, 3 and 4,
On both sides of the first regions 21, 31, that is, on the sides of the antireflection film coating unit group 17, the resist coating unit group 18 in the first processing station 3 and the development processing unit groups 27, 28 in the second processing station 4. Is provided with a container shelf 66 as an area for accommodating a container for storing a processing liquid used in each unit, for example, a resist liquid or an antireflection film liquid. The container shelf 66 has a structure like a door that can be opened and closed on the front side, for example, and the container can be accommodated in this door. This makes it easy to replace the container and perform maintenance and inspection.

Next, the processing steps in the coating and developing system 1 configured as described above will be described.

In the coating and developing system 1, the unprocessed wafer W stored in the cassette C is taken out by the wafer carrier 11 of the cassette station 2,
It is transported into the alignment unit (ALIM) in the cooling processing unit group 16 of the first processing station 3 and alignment is performed.

The wafer W, which has been aligned by the alignment unit (ALIM), is transferred by the first transfer device 14 into the cooling processing unit (CPL) in the cooling processing unit group 16 and subjected to cooling processing.

The wafer W which has been subjected to the cooling process by the cooling unit (CPL) is transferred by the first transfer device 14 into the anti-reflection film coating unit (BCT) in the anti-reflection film coating unit group 17 to prevent reflection. A treatment liquid for the film is applied.

The wafer W coated with the processing solution for the anti-reflection film by the anti-reflection film coating unit (BCT) is transferred to the transfer table (TR) in the first transfer device 14 and the transfer table group 13.
S) and the heat treatment unit (HP) in the heat treatment unit groups 19 and 20 via the second transfer device 15 to carry out the heat treatment.

The wafer W subjected to the heat treatment in the heat treatment unit (HP) is transferred to the second transfer device 15 and the transfer table group 13.
Transfer table (TRS) and the first transfer device 1
The cooling unit is conveyed to the cooling processing unit (CPL) in the cooling processing unit group 16 through the cooling unit 4 and subjected to the cooling process.

The wafer W that has been subjected to the cooling processing by the cooling processing unit (CPL) is transferred by the first transfer device 14 into the resist coating unit (CT) in the resist coating unit group 18 and is coated with a resist liquid. .

The wafer W to which the resist solution has been applied by the resist coating unit (CT) is transferred to the first transfer device 14, the transfer table (TRS) in the transfer table group 13, and the second transfer apparatus.
Heat treatment unit groups 19 and 20 via the transfer device 15
In the heat treatment unit (HP), and heat treatment is performed.

The wafer W heated by the heat processing unit (HP) is supplied to the second transfer device 15, the alignment unit (ALIM) in the cooling processing unit group 26 of the second processing station 4, and the first transfer device 24. Through the cooling processing unit (CPL) in the cooling processing unit group 26 to perform the cooling processing.

The wafer W subjected to the cooling processing by the cooling processing unit (CPL) is transferred to the first transfer device 24, the transfer table (TRS) in the transfer table group 23, the second transfer device 25, and the heat processing unit group 29. Is transported into the peripheral exposure device 34 via the heat processing unit (HP) and the wafer transport body 35, and the peripheral exposure is performed.

The wafer W subjected to the peripheral exposure by the peripheral exposure device 34 is transferred to an exposure device (not shown) by a wafer transfer body 35.

The wafer W that has been subjected to the exposure processing by the exposure device is transferred to the wafer transfer body 35, the heat processing unit (HP) in the heat processing unit group 29, and the second transfer device 2.
5, and is conveyed into one of the heat processing units (HP) in the heat processing unit groups 29 and 30 to perform the heat processing.

The wafer W subjected to the heat treatment in the heat treatment unit (HP) is transferred to the second transfer device 25 and the transfer table group 23.
Table (TRS) and first transfer device 24
Through the cooling processing unit (CPL) in the cooling processing unit group 26 to perform the cooling processing.

The wafer W which has been subjected to the cooling processing by the cooling processing unit (CPL) is transferred to the developing processing units (DEV) in the developing processing unit groups 27 and 28 by the first transfer device 24, where the developing processing is performed. .

The wafer W subjected to the development processing in the development processing unit (DEV) is transferred to the alignment unit (ALI) in the first transfer device 24 and the cooling processing unit group 26.
M) and the second processing unit 15 in the first processing station 3 are transported to the heat processing units (HP) in the heat processing unit groups 19 and 20 to perform the heat processing.

The wafer W subjected to the heat treatment in the heat treatment unit (HP) is transferred to the second transfer device 15 and the transfer table group 13.
Transfer table (TRS) and first transfer device 14
Is transferred to the alignment unit (ALIM) in the cooling processing unit group 16 via the.

The wafer W transferred to the alignment unit (ALIM) is accommodated in the cassette C by the wafer transfer body 11 of the cassette station 2.

According to the coating and developing system 1 according to the present embodiment configured as described above, the transfer table (TR)
With (S) interposed, there are divided into first regions 21 and 31 for performing processing on the wafer W at around normal temperature and second regions 22 and 32 for performing heating processing on the wafer W. ,
Moreover, the first is at least as long as the width of the transfer table (TRS).
Regions 21 and 31 and the second regions 22 and 32 can be separated from each other, so that a unit for performing processing on the wafer W near room temperature in the first regions 21 and 31 is provided in the second region 22. , 32 can be minimized. Therefore, temperature control in a unit for performing processing on the wafer W at around normal temperature can be performed precisely.

Further, according to the coating and developing processing system 1 configured as described above, the processing units and the like (the first transporting device in the first processing station 3) are provided to all four sides around the first transporting devices 14 and 24. In the apparatus 14, the cooling processing unit group 16, the antireflection film coating unit group 17, the resist coating unit group 18 and the transfer table group 13, and the first transfer device 24 in the second processing station 4, the cooling processing unit group 26, The development processing unit groups 27 and 28 and the transfer table group 23) can be arranged, and further, processing units and the like (the second transportation device in the first processing station 3) are provided on three sides around the second transportation devices 15 and 25. 15, the heat treatment unit groups 19 and 20 and the transfer table group 1
3. In the second transfer device 25 in the second processing station 4, the heat processing unit groups 29 and 30 and the transfer table group 2) can be arranged, and the other (the second)
(From the transfer device 15 to the cooling processing unit group 26 in the second processing station 4) can be used to transfer the wafer W to the outside, so that the processing units and the like can be arranged at a high density. Therefore, space saving can be realized.

In the above embodiment, a wafer is described as an example of the substrate, but the present invention can be applied to other substrates such as an LCD substrate. In addition to the resist coating and developing system, another system such as an SOD (Spin on Di) for forming an interlayer insulating film on a substrate.
The present invention can be applied to an electric processing system or the like.

[0064]

As described above, according to the present invention,
Temperature control in the processing liquid supply unit and the cooling processing unit for performing processing on the substrate at around normal temperature can be precisely performed, and further space saving can be realized.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a coating and developing system according to an embodiment of the present invention.

FIG. 2 is a front view of the coating and developing system shown in FIG.

FIG. 3 is a sectional view taken along line AA of the coating and developing treatment system shown in FIG. 1;

4 is a sectional view of the coating and developing system shown in FIG. 1 taken along line BB.

FIG. 5 is a cross-sectional view of the coating and developing system shown in FIG.

FIG. 6 is a cross-sectional view illustrating a configuration of a delivery table group in a first processing station.

FIG. 7 is a perspective view illustrating a configuration of first and second transfer devices illustrated in FIG. 1;

[Explanation of symbols]

 Reference Signs List 1 coating / developing processing system 3 first processing station 4 second processing station 13, 23 transfer table group 14, 24 first transfer device 15, 25 second transfer device 16, 26 cooling processing unit group 17 anti-reflection film Coating unit group 18 Resist coating unit group 19, 20, 29, 30 Heat treatment unit group 21, 31 First region 22, 32 Second region 66 Container shelf 61 Insulating wall 62 Passage 63 First clean air supply unit 64 Second clean air supply unit ALIM Alignment unit TRS Delivery table BCT Anti-reflective coating unit CPL Cooling unit CT Resist coating unit DEV Developing unit HP Heating unit W Wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 562

Claims (7)

[Claims] 1. A transfer table for transferring a substrate, a first transfer device and a second transfer device that are arranged so as to be sandwiched from before and after the transfer table, and transfer the substrate, and between the transfer table and the first transfer device and the second transfer device. A cooling processing unit disposed to sandwich the first transfer device and cooling the substrate, and a processing liquid supply unit disposed on a side of the first transfer device and supplying a processing liquid to the substrate And a heat treatment unit disposed on the side of the second transfer device for heating the substrate. 2. The processing liquid supply unit is stacked in multiple stages, and the first transport device is capable of accessing each of the processing liquid supply units stacked in multiple stages. 2. The substrate processing apparatus according to 1. 3. The apparatus according to claim 1, further comprising a transfer unit arranged to be stacked on the cooling processing unit and for transferring a substrate to and from the outside on a side opposite to the first transfer device. Alternatively, the substrate processing apparatus according to claim 2. 4. A first transfer device configured by the first transfer device, the cooling processing unit, and the processing liquid supply unit.
A first clean air supply unit for supplying clean air to a region, and a second clean for supplying clean air to a second region constituted by the transfer table, the second transfer device, and the heat treatment unit. The air supply section is provided separately, and only the first clean air supply section has a temperature control device for controlling the temperature of the clean air to a predetermined temperature. The substrate processing apparatus according to claim 1. 5. A first transfer device comprising a first transfer device, a cooling processing unit, and a processing liquid supply unit.
And a second area configured by the transfer table, the second transfer device and the heat treatment unit, and a first clean air supply unit that supplies clean air to the first area. The first clean air supply unit comprises:
A gas is exhausted from a lower part of the first area, and the exhausted gas is circulated to blow out a temperature-controlled gas from an upper part of the first area. 5. A passage for circulating gas exhausted from a lower part of the first area to an upper part of the first area so as to divide the area from the second area. 6. A substrate processing apparatus according to claim 1. 6. The first clean air supply unit mixes a gas having a temperature lower than a temperature of the clean air supplied to the first area with the exhausted gas to generate the clean air. The substrate processing apparatus according to claim 5, wherein the processing is performed. 7. A first unit configured by the first transfer device, the cooling processing unit, and the processing liquid supply unit.
Area and a second area configured by the delivery table, the second transfer device, and the heat treatment unit, and a heat insulating wall so as to separate the first area and the second area. 2. The device according to claim 1, wherein
The substrate processing apparatus according to any one of claims 1 to 6.