JP2001152318A - Method of fabrication for substrate structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the breakage of a glass substrate in the stage of fabrication. SOLUTION: In forming a thin film (insulator film) on a specific region of a glass substrate by a high temperature sputtering method, a mask member F shown in a figure is used. In this mask member F, an opening E1 is previously provided to the region where an insulator film is to be formed and also another opening E2 is previously provided to the part corresponding to the region from which the glass substrate is to be removed by cutting. By providing the openings, the glass substrate can be heated nearly uniformly over the whole surface and a difference in temperature between positions can be minimized. As a result, thermal strain occurring in the glass substrate can be minimized, and the breakage of the glass substrate can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a substrate structure, wherein a thin film is formed on a substrate at a high temperature.

[0002]

2. Description of the Related Art Conventionally, a structure in which a thin film such as an electrode or an insulator film is formed on a substrate (hereinafter, referred to as a "substrate structure").
Are used in various electronic devices such as liquid crystal panels.

[0003] Figure 1 is a sectional view showing an electrode substrate used in the liquid crystal panel as an example of such a substrate structure, the electrode substrate A, the electrode 1 on the surface of the glass substrate B ₁ There is formed, the insulator film D ₁ so as to cover these electrodes 1 and 2 are to be constituted by forming.

The insulator film D ₁ has a cell gap of 1
In a liquid crystal panel as small as .about.2 .mu.m (for example, a liquid crystal panel using a ferroelectric liquid crystal), the liquid crystal panel is indispensable for preventing an electric short circuit, and is generally TaO.
_{It is formed from} a material such as _X or SiO ₂ under a vacuum of about 10 ⁻¹ Pa and a high temperature of about 200 ° C. by using a vacuum film forming technique such as a sputtering method.

Meanwhile, the electrodes 1 and 2 described above, since it is necessary to supply an electrical signal connected to the control circuit (not shown), the ends of the electrodes 1 and 2, by an insulator film D ₁ It must be exposed rather than coated. Therefore, as the insulating film D ₁ is formed only in the region C _1, the mask member K having an opening J such as shown in FIG. 6 have been used in forming the insulating film D _1, this Such a mask member is disclosed in JP-A-5-320900.

FIG. 6 shows the glass substrate B ₁ shown in FIG.
A glass substrate B ₀ of larger than, and separated after forming respectively the insulating film D ₁ to the right and left, but showing the manner of forming two electrode substrates at the same time, since the points are less important Detailed description is omitted.

[0007]

[SUMMARY OF THE INVENTION However, when using a mask member K having such opening J at high temperatures, * difference in thermal absorption coefficient and the like between the mask member K and the glass substrate B ₀ Ya When a high frequency is used, the dielectric heating causes a temperature difference between the mask member K and the glass substrate B _0, and the substrate temperature of the portion covered with the mask member K and the mask member is different from the substrate temperature of the portion not covered with K, was sometimes cracked distorted glass substrate B _0. In addition, when mass-producing a large number of substrate structures, there is a problem that the production yield is reduced, and the drive of the film forming apparatus must be temporarily stopped in order to remove a broken substrate. There has been a problem that the operation rate is reduced (that is, the downtime of the apparatus is prolonged).

Accordingly, an object of the present invention is to provide a method of manufacturing a substrate structure which prevents cracking of a substrate.

Another object of the present invention is to provide a method for manufacturing a substrate structure, which prevents a reduction in manufacturing yield and a reduction in the operation rate of the apparatus.

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a method of manufacturing a substrate structure in which a thin film is formed on a substrate at a high temperature. Is performed in a state where mask means having at least a first opening and a second opening is arranged along the substrate, and thereafter, a portion where a thin film is formed through the first opening, The substrate is divided into a portion where the thin film is formed through the opening.

[0011] In this case, the thin film is, TaO _X and SiO
It is preferable to use an insulator film made of ₂ or the like.

Preferably, the thin film is a transparent electrode.

Further, it is preferable that the thin film is formed on the substrate by a sputtering method.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIGS.
An embodiment of the present invention will be described.

First, the structure of a substrate structure manufactured according to the present invention will be described with reference to FIG.

Substrate structure A manufactured according to the present invention
As shown in FIG. 1, the substrate B _1, a thin film D ₁ disposed in a specific area C ₁ of the substrate B _1, it is provided with at least.

[0017] Here, in FIG. 1, TaO as a thin film D _1
Although an insulator film made of _X , SiO ₂ or the like is shown as an example, the invention is not limited to this, and a transparent electrode made of ITO (indium tin oxide) or the like can be used.

A liquid crystal (not shown) may be arranged along the substrate structure A to form a liquid crystal element, and a color filter may be arranged to perform color display.

Next, a method of manufacturing the substrate structure A according to the present invention will be described with reference to FIGS. Here, FIG. 2 is a plan view showing a state in which the substrate structure A is created, and FIG. 3 is a plan view showing a shape of a mask means used for manufacturing the substrate structure. Note that these figures
The case where two substrate structures A are formed on the left and right sides of one substrate will be described. However, the present invention is not limited to this, and one substrate structure A is formed on one substrate. Alternatively, three or more substrate structures may be formed on one substrate.

In manufacturing the substrate structure A, a substrate B ₀ which is larger than the substrate B ₁ as a structural member of the substrate structure A is prepared (see FIG. 2), and the specific structure of the substrate B ₀ is specified. forming a thin film D ₁ at a high temperature in the region C _1. Formation of the thin film D _1, as shown in FIG. 3, is performed in a state arranged along the mask means F on the substrate B _0, in the mask means F, as shown in FIG. 4, the area other forming a first opening E ₁ in the portion corresponding to C _1, the other areas C
_{A second} opening E2 is formed in a portion corresponding to ₂ . Thus, the substrate B ₀ is not in a region C ₁ only thin D ₁ is formed, so that the thin film D ₂ is also formed in a region C _2.

The thin film may be formed by a vacuum film forming method such as a sputtering method.

[0022] Thereafter, to divide a portion of the thin film D ₁ is formed (a portion indicated by reference sign B _1), the substrate B ₀ in a portion where the thin film D ₂ is formed (a portion indicated by reference sign B _2).

Next, effects of the present embodiment will be described.

According to the present embodiment, the mask means F
Since it has also one orifice E other openings E ₂ well _1, when forming a thin film, wherein the second opening not only the substrate temperature in the region C ₁ in which the first corresponding to the opening E ₁ the substrate temperature in the region C ₂ corresponding to the E ₂ also increased, as a result, the temperature difference between the substrate B ₀ and the mask means F is reduced. Therefore, if the difference in heat absorption coefficient between the substrate B ₀ and the mask means F is large, or the temperature of the substrate is increased during film formation by sputtering, especially dielectric heating is performed by RF at a high frequency. also, reducing the temperature difference between the thin film D _1, region C ₁ which forms a D _2, C ₂ and the thin film D _1, areas that do not form D ₂ (reference numeral C _3, C ₄ in FIG. 2) are distortion and cracking of the substrate B ₀ is reduced.

Further, when mass-producing the above-described substrate structure A, it is possible to prevent a reduction in the manufacturing yield.

Further, it is not necessary to temporarily stop the driving of the film forming apparatus for removing the cracked substrate, and it is possible to prevent a decrease in the operation rate of the apparatus.

[0027]

The present invention will be described below in more detail with reference to examples. (Embodiment 1) In this embodiment, two electrode substrates (substrate structures) indicated by reference symbol A in FIG.
Liquid crystals were arranged in the gaps between the substrates to form a liquid crystal panel.

The electrode substrate A, as shown in FIG. 1, a glass substrate B _1, a plurality of transparent electrodes 1 of the strip formed on the glass substrate B ₁ on the surface, was placed along the respective transparent electrodes 1 Auxiliary electrode 2 and an insulator film (thin film) D ₁ arranged to cover these electrodes 1 and 2 to prevent an electrical short circuit
And created by. Note that the insulator film D ₁ is disposed so as to cover the electrodes 1 and 2 only in the image display area C ₁ , and is not disposed at the end of the transparent electrode 1 or the auxiliary electrode 2 (see reference numeral C ₃ ). Part was exposed. The ends of the electrodes 1 and 2 are connected to a control circuit (not shown) to receive an electric signal.

Here, the glass substrate B ₁ has a thickness of 550 mm.
A blue plate glass having dimensions of 450 mm x 1.1 mm was used, and the thickness of the transparent electrode 1 was 0.07 µm. The auxiliary electrode 2 is made of an aluminum alloy having a thickness of 0.19 μm, and the insulator film D ₁ is made of Ta ₂ O having a thickness of 0.09 μm.
₅ was used.

In the present embodiment, two electrode substrates A were formed from one substrate. Hereinafter, the manufacturing method will be described with reference to FIGS.

In manufacturing the electrode substrate A, a glass substrate B ₀ larger than the glass substrate B ₁ shown in FIG. 1 is prepared (see FIG. 2), and the entire surface of the glass substrate B _{0 is} transparent by sputtering. An electrode film was formed and patterned by the photolithography method to form the transparent electrode 1 having the above-described shape.

Next, an aluminum alloy thin film was formed by a sputtering method so as to cover the transparent electrode 1, and was patterned by a photolithography method to form the auxiliary electrode 2 having the above-described shape.

Thereafter, as shown in FIG.
₀ Electrode surface (surface on the side where the above-mentioned electrodes 1 and 2 are formed)
A mask member (mask means) F is arranged so as to cover
Lath substrate B₀ And the mask member F are closed by means (not shown).
I ramped. The mask member F is made of an aluminum alloy.
Then, as shown in FIG.₁ Department corresponding to
Two first openings E on the left and right₁ And a glass substrate B₀ 
Edge and first opening E₁Between the four second openings E_Two 
. The opening E₁ , E_Two Parts other than
Minutes (code area C_Three And C_Four Part corresponding to)
Glass substrate B set₀ 0.2mm gap between
(Refer to FIG. 3) and a part (reference H ₁ See)
Lath substrate B₀ Glass substrate B₀ In the thickness direction
It has a shape that allows positioning. Further, FIG._Two 
The glass substrate B is partially₀Contact each end face of
Glass substrate B₀ For positioning in the surface direction.

Then, the glass substrate B ₀ set on the mask member F is transported to the sputtering device while being vertically erected by the transport device, and the regions C ₁ and C ₂ are insulated at a high temperature by the sputtering device. Body films D ₁ and D ₂ were formed. In addition, as a sputtering apparatus, a vertical conveyance in-line type RF magnetron sputtering apparatus (manufactured by Anelva, ILC
-3900). The pressure is 3.2 × 10 ^-1 P
a, the number of targets was three, the input power was 2.60 kW per target, and the substrate temperature was 200 ° C.

Next, after the glass substrate B ₀ is carried out from the sputtering device, removing the mask member F.

Thereafter, the glass substrate was moved along the broken line shown in FIG.
Board B₀ And the insulating film D₁ Where the is formed (sign
B₁ And the insulator film D_Two Where the mark is formed (mark
Issue B _Two Part) and the former part B₁ Is the electrode base
Used as a board, the latter part B_Two Was discarded. This
Thus, two electrode substrates A were obtained.

The present inventor has prepared a 24 mask member F, the 3000 glass substrate B ₀ at which the insulating film D ₁ began to successively formed by the method and conditions described above, the substrate cracks Not at all. (Embodiment 2) In this embodiment, the above-described electrode substrate A
And an electrode substrate (substrate structure) indicated by reference symbol G in FIG. 5 were prepared and arranged in parallel, and liquid crystal was disposed between the substrates to form a liquid crystal panel.

The electrode substrate G, as shown in FIG. 5, the glass substrate B _1, the color filter 10 formed on the surface of the glass substrate B _1, the color filter 10 and a leveling film 11 disposed to so as to cover , Transparent electrode 1 and auxiliary electrode 2
When an insulating film D _1, was prepared by. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description is omitted.

The transparent electrode 1 was made of ITO (indium tin oxide).

By the way, also in this embodiment, the first embodiment
Similarly, two electrode substrates G were formed from one substrate. Hereinafter, the manufacturing method will be described.

In manufacturing the electrode substrate G, a glass substrate B ₀ larger than the glass substrate B ₁ shown in FIG. 5 is prepared, and a thin film for a color filter is formed on the entire surface of the glass substrate B ₀ . A negative resist material was applied to the entire surface of the thin film by a spin device, unnecessary portions were removed by a fine processing technique, and color filters 10 of three primary colors of red, blue and green were regularly arranged.

Next, a flattening film resin was applied to the entire surface of the glass substrate B ₀ by a spin device to form a flattening film 11.

Thereafter, an ITO film (thin film) was formed on the surface of the flattening film 11 by a sputtering method, and was patterned to form the transparent electrode 1. In addition, in forming this ITO film, a vertical conveyance in-line type DC magnetron sputtering device (ILC-3900, manufactured by Anelva) was used, the pressure was set to 3.6 × 10 ^-1 Pa, the number of targets was set to two, and the input The power was 0.63 kW per target, and the substrate temperature was 200 ° C. Further, in forming the ITO film, the same mask member (made of stainless steel) as used in Example 1 was used to reduce cracks in the glass substrate due to the formation of the ITO film.

Next, the auxiliary electrode 2 and the insulator films D ₁ and D ₂ were formed in the same manner as in Example 1.

Thereafter, as in the first embodiment, the glass substrate B ₀
The divided, it is formed the insulating film D ₁ part (a portion indicated by reference sign B ₁₎ and the insulator film D ₂ is formed partially (code B ₂
Divided into a part) indicated by the former part B ₁ represents use as an electrode substrate, the latter portion B ₂ has been discarded. by this,
Two electrode substrates G were obtained.

According to the present embodiment, no crack was generated in the glass substrate during the formation of the ITO film and the formation of the insulator film.

[0047]

As described above, according to the present invention,
Since the mask means has not only one opening but also a plurality of openings of the first opening and the second opening, when forming the thin film, if only the substrate temperature of the region corresponding to the first opening is obtained. First, the substrate temperature in the region corresponding to the second opening also increases, and as a result, the temperature difference between the substrate and the mask means is reduced. Therefore, even if the difference in heat absorption coefficient between the substrate and the mask means is large, or dielectric heating is performed by high frequency, the difference between the region where the thin film is formed and the region where the thin film is not formed is obtained. Is reduced, and distortion and cracking of the substrate are reduced.

Further, when mass-producing the above-described substrate structure, it is possible to prevent a reduction in manufacturing yield.

Further, it is not necessary to temporarily stop the driving of the film forming apparatus for removing the broken substrate, and it is possible to prevent a reduction in the operating rate of the apparatus.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of the structure of an electrode substrate manufactured by applying the present invention.

FIG. 2 is a plan view showing a state in which an insulator film is formed by applying the present invention.

FIG. 3 is a plan view showing the shape of a mask member used in the present invention.

FIG. 4 is a sectional view showing a state where a mask member is arranged on a glass substrate.

FIG. 5 is a sectional view showing another example of the structure of an electrode substrate manufactured by applying the present invention.

FIG. 6 is a view for explaining a conventional method for manufacturing an electrode substrate.

FIG. 7 is a view for explaining a conventional method for manufacturing an electrode substrate.

[Explanation of symbols]

A electrode substrate (substrate structure) B ₁ glass substrate (substrate) D ₁ insulator film (thin film) E ₁ first opening E ₂ second opening F mask member (mask means)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G09F 9/00 338 G09F 9/00 338 5G435 9/30 9/30 Z310 310 F-term (Reference) 2H089 HA14 JA07 QA06 QA12 TA01 TA02 TA05 2H090 JA06 JA07 2H092 HA01 MA05 NA29 NA30 4K029 AA09 BA43 BA45 BA46 BA47 BA50 BD01 CA05 DC05 DC15 DC39 HA01 HA02 HA03 HA04 5C094 AA33 AA36 AA42 AA43 BA43 BA49 DA13 DA02 EB04 FB04 AA17 BB12 KK05 KK10

Claims (4)

[Claims] 1. A method of manufacturing a substrate structure, wherein a thin film is formed on a substrate at a high temperature, wherein the thin film is formed on the substrate by using a mask means having at least a first opening and a second opening on the substrate. Then, the substrate is divided into a portion where the thin film is formed through the first opening and a portion where the thin film is formed through the second opening. A method for manufacturing a substrate structure, comprising: 2. The method for manufacturing a substrate structure according to claim 1, wherein the thin film is an insulator film made of TaO _X , SiO _2, or the like. 3. The method according to claim 1, wherein the thin film is a transparent electrode. 4. The method according to claim 1, wherein the thin film is formed on the substrate by a sputtering method.