JP2001148534A5 - - Google Patents

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Publication number
JP2001148534A5
JP2001148534A5 JP2000270989A JP2000270989A JP2001148534A5 JP 2001148534 A5 JP2001148534 A5 JP 2001148534A5 JP 2000270989 A JP2000270989 A JP 2000270989A JP 2000270989 A JP2000270989 A JP 2000270989A JP 2001148534 A5 JP2001148534 A5 JP 2001148534A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000270989A
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Japanese (ja)
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JP4627850B2 (en
JP2001148534A (en
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Priority to JP2000270989A priority Critical patent/JP4627850B2/en
Priority claimed from JP2000270989A external-priority patent/JP4627850B2/en
Publication of JP2001148534A publication Critical patent/JP2001148534A/en
Publication of JP2001148534A5 publication Critical patent/JP2001148534A5/ja
Application granted granted Critical
Publication of JP4627850B2 publication Critical patent/JP4627850B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000270989A 1999-09-09 2000-09-07 Method for forming electrode of group III nitride semiconductor Expired - Lifetime JP4627850B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000270989A JP4627850B2 (en) 1999-09-09 2000-09-07 Method for forming electrode of group III nitride semiconductor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25526899 1999-09-09
JP11-255268 1999-09-09
JP2000270989A JP4627850B2 (en) 1999-09-09 2000-09-07 Method for forming electrode of group III nitride semiconductor

Publications (3)

Publication Number Publication Date
JP2001148534A JP2001148534A (en) 2001-05-29
JP2001148534A5 true JP2001148534A5 (en) 2007-10-25
JP4627850B2 JP4627850B2 (en) 2011-02-09

Family

ID=26542109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000270989A Expired - Lifetime JP4627850B2 (en) 1999-09-09 2000-09-07 Method for forming electrode of group III nitride semiconductor

Country Status (1)

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JP (1) JP4627850B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0302580D0 (en) * 2003-02-05 2003-03-12 Univ Strathclyde MICRO LEDs
JP4703198B2 (en) * 2005-01-24 2011-06-15 三菱電機株式会社 Semiconductor laser device and manufacturing method thereof
JP2007027164A (en) * 2005-07-12 2007-02-01 Rohm Co Ltd Manufacturing method of semiconductor light emitting device and semiconductor light emitting device
WO2009072526A1 (en) * 2007-12-04 2009-06-11 Rohm Co., Ltd. Light emitting element and method for manufacturing the same
CN101971364B (en) 2008-11-06 2013-05-15 松下电器产业株式会社 Nitride semiconductor element and method for manufacturing the same
WO2011077704A1 (en) 2009-12-25 2011-06-30 パナソニック株式会社 Nitride semiconductor element and method for manufacturing same

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