JP2001147447A5 - - Google Patents

Description

Patent application title: Electro-optical device, method of manufacturing the same, and projector

[0006]
[Means for Solving the Problems]
In order to solve the above problems, a first electro-optical device according to the present invention includes a plurality of scanning lines and a plurality of data lines, and thin film transistors provided corresponding to intersections of the scanning lines and the data lines on a substrate. A first storage capacitor electrode comprising a part of a semiconductor layer extended from the drain region; and a first storage capacitor electrode, and a pixel electrode electrically connected by relaying a conductive layer to the drain region. A third storage capacitor, which is disposed opposite to the second storage capacitor electrode on the capacitor electrode via the first dielectric film, to construct one storage capacitor, and which comprises the second storage capacitor electrode and a part of the conductive layer. The other storage capacitor is constructed by facing the electrode through the second dielectric film to construct another storage capacitor, which includes the one and other storage capacitors cut in a direction intersecting the extension direction of the second storage capacitor electrode. In the cross section, the first storage capacitor electrode is It is formed wider than the second storage capacitance electrode.

[0008]
Furthermore, the third storage capacitor electrode formed of a part of the conductive layer is disposed opposite to the second storage capacitor electrode , whereby the second storage capacitor electrode is disposed opposite to the first storage capacitor electrode formed of a part of the semiconductor layer. In addition to the storage capacity of one built, another storage capacity is additionally built. Therefore, by using the conductive layer, the storage capacity can be increased by effectively utilizing the non-aperture area of a limited pixel (that is, the area in which light contributing to display in each pixel is not transmitted). As a result, the voltage holding time of the image signal in the pixel electrode can be extended, and the contrast ratio can be efficiently enhanced. Further, the first storage capacitor electrode provided in each pixel can be collectively configured by the capacitor line.

[0010]
Then, in the cross section including the first and other storage capacitor taken along the direction crossing the extending direction of the second storage capacitor electrode, the first storage capacitor electrode is formed wider than the second storage capacitor electrode. That is, the inequality relation of the width of the first storage capacitance> the width of the second storage capacitance is established. Therefore, compared with the case where the first storage capacitor electrode is formed to have the same width as the second storage capacitor electrode, the coverage of the second dielectric film formed on the second storage capacitor electrode side surface is far Get better. More specifically, the second storage capacitor electrode is formed on the upper surface of the wide first storage capacitor electrode so that the side surface portion rises from a position receding from the edge of the wide first storage capacitor electrode. The difference in level between the second dielectric film and the second storage film may be approximately equal to the thickness of the second storage capacitor electrode. Then, it is relatively easy to attach the second dielectric film to the side surface portion of the second storage capacitor electrode by the step difference. As a result, a conductive layer is formed on the second storage capacitor electrode via the second dielectric film via the defective portion of the second dielectric film which is not good enough at the side of the second storage capacitor electrode. It is possible to reduce the possibility of shorting or leakage with the third storage capacitor electrode which is a part of

[0013]
According to this aspect, the width of the first storage capacitor> the width of the second storage capacitor> the width of the third storage capacitor in a cross section including one and the other storage capacitors cut in a direction intersecting the extension direction of the second storage capacitor electrode An inequality relation of width is established. Therefore, temporarily the second dielectric film formed on the second storage capacitor electrode is bad at the side portion of the second storage capacitor electrode, and there is a defect in the second dielectric film at this side portion. Also, the third storage capacitor electrode is not formed on the second dielectric film in the side surface portion. For this reason, there is almost no possibility that the third storage capacitor electrode and the second storage capacitor electrode will be shorted or leak via this defect point.

[0015]
According to this aspect, the width of the first storage capacitance> the width of the second storage capacitance> the width of the second storage capacitance <the third storage capacitance in a cross section including one and other storage capacitances cut in a direction intersecting the extension direction of the second storage capacitance electrode . An inequality relation of width is established. For this reason, although the third storage capacitor electrode is formed on the second dielectric film in the side surface portion of the second storage capacitor electrode, the second dielectric film formed on the second storage capacitor electrode is particularly Since the side surface of the second storage capacitor electrode is also good, the second storage capacitor electrode and the second dielectric film over the second storage capacitor electrode via the defective portion of the second dielectric film which is not smooth in the side surface of the second storage capacitor electrode. It is possible to reduce the possibility of shorting or leakage with the third storage capacitor electrode formed.

[0016]
According to a second electro-optical device of the present invention, in order to solve the above problems, a plurality of scanning lines and a plurality of data lines, thin film transistors provided corresponding to intersections of the scanning lines and the data lines are provided on a substrate. A pixel electrode connected by relaying a conductive layer to the drain region, and a first storage capacitor electrode formed of a part of a semiconductor layer extended from the drain region and the first storage capacitor electrode And a second storage capacitor electrode are arranged opposite to each other via the first dielectric film to construct one storage capacitor, and a third storage capacitor electrode consisting of the second storage capacitor electrode and a part of the conductive layer Are disposed opposite to each other through the second dielectric film to construct another storage capacitance, and in a cross section including the one and the other storage capacitances cut in a direction intersecting the extension direction of the second storage capacitance electrode The second storage capacitor electrode is Storage capacitor electrodes are formed wider than the second dielectric film in the conductive layer and the conductive layer is not formed region is formed an interlayer insulating film.

[0018]
Then, in the cross section including the first and other storage capacitor taken along the direction crossing the extending direction of the second storage capacitor electrode, the inequality relationship second width of the storage capacitor electrode> the width of the third storage capacitor electrode is established. For this reason, even if there is a defective portion of the second dielectric film which is dull at the side portion of the second storage capacitor electrode, the third storage capacitor electrode is formed on the second dielectric film at this side portion. I will not. Moreover, the defective portion in this case is covered with one interlayer insulating film. As a result of these, there is almost no possibility that the third storage capacitor electrode and the second storage capacitor electrode will short or leak via this defect point.

[0021]
According to this aspect, even if the edge of the second storage capacitor electrode is formed with almost no taper, it is assumed that the first storage capacitor electrode is formed to have the same width as the second storage capacitor electrode as described above. Although the second dielectric film is very poorly attached, in this embodiment, since the first storage capacitor electrode is formed wider than the second storage capacitor electrode, it is also formed on the second storage capacitor electrode. The second dielectric film is fine.
Therefore, the possibility of shorting or leakage between the second storage capacitor electrode and the third storage capacitor electrode which is a part of the conductive layer can be reduced via the defective portion of the second dielectric film which is not good enough. . Therefore, it is possible to form the second storage capacitor electrode using highly directional dry etching which is suitable for reducing the incidence of device defects and improving the pattern accuracy in accordance with the miniaturization of the device electrodes and wirings. The scanning line can be formed simultaneously by dry etching from the same film as the capacitance line. This is very advantageous in forming a thin film transistor having excellent transistor characteristics by forming a gate electrode with high pattern accuracy, considering that a part of the scanning line is used as a gate electrode of the thin film transistor.

[0022]
In another aspect of the first or second electro-optical device of the present invention, the drain region and the conductive layer are first contact holes opened in a planar region where the one and the other storage capacitors are not formed. The first storage capacitor electrode is more electrically connected than the second storage capacitor electrode in a cross-section including the first contact hole which is electrically connected via the second storage capacitor electrode and cut in a direction intersecting the extension direction of the second storage capacitor electrode. The third storage capacitor electrode is formed wider than the second storage capacitor electrode.

[0023]
According to this aspect, the first contact hole is opened in the planar area where one and the other storage capacitances are not formed. The drain region of the semiconductor layer and the conductive layer are electrically connected via the first contact hole. Then, in the section including the first contact hole cut in the direction intersecting the extension direction of the second storage capacitor electrode, the inequality: width of first storage capacitor electrode> width of second storage capacitor electrode <width of third storage capacitor electrode A relationship is established. Therefore, in this cross section, the drain region and the conductive layer can be connected so as not to be in electrical contact with the second storage capacitance electrode through the first contact hole. In addition, although the third storage capacitor electrode is formed on the second dielectric film in the side surface portion of the second storage capacitor electrode, the second dielectric film formed on the second storage capacitor electrode is good. Therefore, in the end, between the second storage capacitor electrode and the third storage capacitor electrode via the defective portion of the second dielectric film which is dulled in the side portion of the second storage capacitor electrode around the first contact hole. Can reduce the possibility of shorting or leakage.

[0026]
In another aspect of the first or second electro-optical device of the present invention, the gate insulating film of the thin film transistor is formed of the same film as the first dielectric film, and the gate insulating film of the second storage capacitor electrode is formed of the same film as the second storage capacitor electrode. A scan line is formed.

[0027]
According to this aspect, the first dielectric film for constructing one storage capacitance and the gate insulating film of the thin film transistor are formed of, for example, the same film as the thermal oxide film or the like.
Moreover, the second storage capacitor electrode and the scanning line are formed of, for example, the same film as the polysilicon film or the like. Therefore, it is possible to achieve simplification of the apparatus configuration and manufacturing method as a whole and cost reduction. In particular, in the case where dry etching is performed to pattern the capacitance lines and the scanning lines in order to obtain the pattern accuracy required for the scanning lines constituting the gate electrode, the dry etching does not substantially taper. Even if the second storage capacitor electrode having the side surface portion is formed, the possibility of a short circuit or a leak between the second storage capacitor electrode and the third storage capacitor electrode may not be significantly increased.

Claims (15)

On the board
Multiple scan lines and multiple data lines,
A thin film transistor provided corresponding to the crossing of the scanning line and the data line;
And a pixel electrode electrically connected to the drain region via a conductive layer .
A first storage capacitor electrode formed of a part of the semiconductor layer extended from the drain region and a second storage capacitor electrode on the first storage capacitor electrode are disposed opposite to each other via a first dielectric film. A storage capacitor is constructed, and the second storage capacitor electrode and a third storage capacitor electrode consisting of a part of the conductive layer are disposed opposite to each other via the second dielectric film, and another storage capacitor is constructed. ,
Characterized in that said first storage capacitor electrode is formed wider than the second storage capacitor electrode in a cross section including the first and other storage capacitor taken along the direction crossing the extending direction of the second storage capacitor electrode Electro-optical device. The electro-optical device according to claim 1, wherein the third storage capacitor electrode is formed narrower than the second storage capacitor electrode in the cross section. The electro-optical device according to claim 1, wherein the third storage capacitor electrode is formed wider than the second storage capacitor electrode in the cross section. On the board
Multiple scan lines and multiple data lines,
A thin film transistor provided corresponding to the crossing of the scanning line and the data line;
And a pixel electrode connected by relaying a conductive layer to the drain region,
A first storage capacitor electrode formed of a part of the semiconductor layer extended from the drain region and a second storage capacitor electrode on the first storage capacitor electrode are disposed opposite to each other via the first dielectric film. Storage capacitances are constructed, and the second storage capacitance electrode and the third storage capacitance electrode consisting of a part of the conductive layer are disposed opposite to each other through the second dielectric film to construct another storage capacitance. Yes,
The second storage capacitor electrode in a cross section including the first and other storage capacitor taken along the direction crossing the extending direction of the second storage capacitor electrode is formed wider than the third storage capacitor electrode, wherein the conductive An electro-optical device characterized in that an interlayer insulating film is formed on the layer and on the second dielectric film in a region where the conductive layer is not formed. The electro-optical device according to any one of claims 1 to 4, wherein an edge of the second storage capacitor electrode in the cross section is formed in a substantially non-tapered state. The drain region and the conductive layer are electrically connected via a first contact hole opened in a planar region where the one and the other storage capacitors are not formed, and the second storage capacitor electrode The first storage capacitor electrode is formed wider than the second storage capacitor electrode in a cross section including the first contact hole cut in a direction intersecting the extension direction of the second storage capacitor electrode and the third storage capacitor electrode is the second The electro-optical device according to any one of claims 1 to 5, wherein the electro-optical device is formed wider than the storage capacitance electrode. The conductive layer and the pixel electrode are electrically connected to each other through a second contact hole opened in a planar region in which the one and the other storage capacitances are constructed. 6. The electro-optical device according to any one of 6. 8. The gate insulating film of the thin film transistor is formed of the same film as the first dielectric film, and the scanning line is formed of the same film as the second storage capacitor electrode. The electro-optical device according to any one of the above. The electro-optical device according to any one of claims 1 to 8, wherein the conductive layer contains a refractory metal. The electro-optical device according to any one of claims 1 to 9, wherein the conductive layer is provided on the substrate below the data line. A light according to any one of claims 1 to 10 A projector characterized in that it is used as a valve. Forming on the substrate a semiconductor layer to be a source region, a channel region and a drain region of the thin film transistor and a first storage capacitance electrode of one storage capacitance;
Forming the gate insulating film of the thin film transistor and the first dielectric film of the one storage capacitor from the same insulating thin film on the semiconductor layer;
Forming a plurality of scanning lines and a plurality of capacitance lines on the first gate insulating film and the first dielectric film, respectively;
Forming a second dielectric film on the scan line and the capacitance line;
Opening a first contact hole communicating with the drain region in the first and second dielectric films;
Forming a conductive layer on the second dielectric film so as to be electrically connected to the drain region through the first contact hole;
Forming an interlayer insulating film on the conductive layer;
Forming a plurality of data lines on the one interlayer insulating film;
Forming another interlayer insulating film on the data line;
Opening a second contact hole communicating with the conductive layer in the one and the other interlayer insulating films;
Forming a pixel electrode on the other interlayer insulating film so as to be electrically connected to the conductive layer through the second contact hole;
The one storage capacitor is constructed by opposingly arranging the first storage capacitor electrode and a second storage capacitor electrode formed of a part of the capacitor line via the first dielectric film, and the second storage capacitor Another storage capacitor is constructed by opposingly arranging an electrode and a third storage capacitor electrode made of a part of the conductive layer via the second dielectric film,
An electro-optical device characterized in that the first storage capacitor electrode is formed wider than the second storage capacitor electrode in a cross section including the one and other storage capacitors cut in a direction intersecting the extension direction of the capacitor line. Manufacturing method. The method according to claim 12, wherein the third storage capacitor electrode is formed narrower than the second storage capacitor electrode in the cross section. Forming on the substrate a semiconductor layer to be a source region, a channel region and a drain region of the thin film transistor and a first storage capacitance electrode of one storage capacitance;
Forming the gate insulating film of the thin film transistor and the first dielectric film of the one storage capacitor from the same insulating thin film on the semiconductor layer;
Forming a plurality of scanning lines and a plurality of capacitance lines on the gate insulating film and the first dielectric film, respectively;
Forming a second dielectric film on the scan line and the capacitance line;
Opening a first contact hole communicating with the drain region in the first and second dielectric films;
Forming a conductive layer on the second dielectric film so as to be electrically connected to the drain region through the first contact hole;
Forming an interlayer insulating film on the conductive layer and on the second dielectric film in a region where the conductive layer is not formed;
Forming a plurality of data lines on the one interlayer insulating film;
Forming another interlayer insulating film on the data line;
Opening a second contact hole communicating with the conductive layer in the one and the other interlayer insulating films;
Forming a pixel electrode on the other interlayer insulating film so as to be electrically connected to the conductive layer through the second contact hole;
The one storage capacitor is constructed by opposingly arranging the first storage capacitor electrode and a second storage capacitor electrode formed of a part of the capacitor line via the first dielectric film, and the second storage capacitor Another storage capacitor is constructed by opposingly arranging an electrode and a third storage capacitor electrode made of a part of the conductive layer via the second dielectric film,
An electro-optical device characterized in that the second storage capacitor electrode is formed wider than the third storage capacitor electrode in a cross section including the one and other storage capacitors cut in a direction intersecting the extension direction of the capacitor line. Manufacturing method. The electro-optical device according to any one of claims 12 to 14, wherein the step of forming the scanning line and the capacitive line includes the step of patterning the scanning line and the capacitive line by dry etching. Production method.