JP2001143603A - Field emission cold cathode element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of fabricating a field emission cold cathode operating in high voltage with high reliability without damaging the gate and anode. SOLUTION: A conditioning electrode 15 is so arranged on a gate 7 as to make its openings 15a not superpose with the gate vacancy 7a of the gate during conditioning. After completing conditioning, the conditioning electrode 15 is moved by a handle 16 relative to the gate 7 so as to make the openings 15a coincide wit the gate vacancy 7a. This protects the openings 7a and the emitter 4 from being damaged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission cold cathode device used for a power switching element or a switch.

[0002]

2. Description of the Related Art In recent years, application of a field emission type cold cathode device (vacuum micro device) as a power switching device is being studied. It controls the current by using electron emission in a high electric field, and has various aspects such as high-speed traveling of electrons in vacuum, high dielectric strength, temperature resistance and radiation resistance, etc. Also have exceptional properties. Therefore, applications in a very wide field such as an ultra-high-speed microwave device, a power switching device, and an electron beam device flat panel display are expected.

FIG. 11 shows the basic structure of a field emission cold cathode device. This field emission type cold cathode device is formed by insulatingly closing an insulating cylinder 1 by an emitter side flange 2 and an anode side flange 3 and keeping the inside thereof at a high vacuum. In this vacuum vessel, an emitter 4 having minute projections on the order of microns and having a sharp tip.
Are densely integrated on the substrate 5 to form an emitter array.

A gate 7 is electrically isolated from the emitter 4 by an insulating layer 6 at a slight distance, and a small gate space is provided in the gate 7 at a portion facing the tip of the emitter 4. A hole 7a is provided. An emitter-side energizing shaft 8 is joined to the substrate 5 on which the emitter 4 is integrated, and a gate lead 9 is joined to the gate 7, and passes through the vacuum vessel in an airtight manner. However, when a metal material is used for the flange, the gate lead is electrically insulated by the insulating plug 10.

Here, between the gate 7 and the emitter 4,
When the gate voltage Vg is applied with the gate 7 at a high potential, the tip of the emitter 4 has a high electric field, and electrons are emitted by the tunnel effect. The emitted electrons pass through the gate holes 7a, reach the opposed anode 11, and are led out of the vacuum vessel via the anode-side conducting shaft 12 joined to the anode 11. The current per one of the emitters 4 is very small and at most several hundred μA,
Even if the emitters are arranged at intervals of 5 μm, a current of as much as 400 A per cm ² can be passed. The magnitude of this current is determined by the gate voltage Vg
The electron emission from the emitter 4 is eliminated when the gate voltage Vg is set to zero or a negative polarity. By controlling the gate voltage in this manner, a switching operation can be performed.

The fine emitter / gate structure as described above is manufactured by using a fine processing technique by vapor deposition or etching developed for manufacturing a semiconductor. As the material, molybdenum or diamond is used for the emitter 4 and silicon is mainly used for the gate 7.

In order to prevent the anode 11 from partially melting and evaporating due to the electron flow and adhering to the inner surface of the insulating cylinder 1 to reduce the creeping insulation performance, the shield 13 is used.
May be provided.

In general, the insulation performance of an electrode in a vacuum depends not only on the material and electric field strength of the electrode, but also on the surface condition of the electrode. That is, the insulation performance changes due to the influence of the microscopic projections and fine particles existing on the electrode surface, or the presence of the oxide film or the foreign matter. When microscopic protrusions are present on the electrode surface, the electric field strength at the tip increases, and electrons are emitted by the electric field radiation. Is melted.

In the case where fine particles loosely adhere to the surface of the electrode, they float by electrostatic force, accelerate and fly toward the opposite electrode, and change the kinetic energy to thermal energy at the moment of collision, thereby causing the fine particles themselves and the collision. Some of the electrodes melt and evaporate to become a plasma source, which may cause destruction. Further, when there is an oxide film or a foreign substance, electrons may be easily emitted due to a change in work function.
Therefore, in vacuum equipment used at high voltage, it is necessary to remove such causes of destruction in advance.

Therefore, a conditioning process is performed after assembling the equipment. The conditioning treatment is a treatment in which an overvoltage is applied to an electrode to cause dielectric breakdown, and a discharge is used to melt and remove minute projections, fine particles, oxide films, and foreign substances on the surface. By repeating the discharge, the breakdown voltage gradually increases.

[0011]

However, in order to improve the insulation performance between the gate 7 and the anode 11 of the field emission cold cathode device as described above, this conditioning process cannot be applied. This is because the gate hole 7a and the emitter 4 immediately below the gate hole 7a are damaged by repeated dielectric breakdown. For this reason, it is required to improve the insulation performance without causing a discharge between the gate 7 and the anode 11.

An object of the present invention is to provide a field emission type cold cathode device which can achieve a high voltage without damage to a gate and an anode and has excellent reliability.

[0013]

According to a first aspect of the present invention, there is provided a field emission type cold cathode device, comprising: an emitter array in which an emitter for emitting electric field is arranged in a vacuum vessel; and an electric field emission from the emitter. In a field emission cold cathode device including a gate to be formed and an anode into which a field emission current from the emitter is injected, wherein a conditioning hole is provided at substantially the same position as a gate hole provided in the gate. A flat conditioning electrode for generating a discharge between the anode at the time of the conditioning process, and the gate hole and the electrode hole do not overlap each other during the conditioning process, and after the conditioning process is completed, An electrode operating rod for moving the conditioning electrode to a position where the gate hole and the electrode hole coincide with each other. The features.

In the field emission cold cathode device according to the first aspect of the present invention, during the conditioning process, the position of the gate hole provided in the gate and the electrode hole provided in the conditioning electrode do not overlap with each other. After the completion of the process, the conditioning electrode is moved by the electrode operation rod to a position where the gate hole and the electrode hole coincide. As a result, the conditioning process is performed while protecting the gate hole, so that the gate hole and the emitter are not damaged.

According to a second aspect of the present invention, there is provided a field emission type cold cathode device, comprising: an emitter array in which an emitter for emitting electric field is arranged in a vacuum vessel; a gate for controlling electric field emission from the emitter; In the field emission cold cathode device having an anode into which a field emission current is injected from, the electrode has an electrode opening extending over a plurality of gate holes provided in the gate; A conditioning electrode having a flat plate shape for generating a discharge between the plurality of gate holes and the electrode openings during the conditioning process does not overlap with the plurality of gate holes and the electrode openings after the completion of the conditioning process. An electrode operating rod for moving the conditioning electrode to a position where the electrode opening overlaps the electrode opening. To.

In the field emission cold cathode device according to the second aspect of the present invention, during the conditioning process, the plurality of gate holes provided in the gate and the electrode opening provided in the conditioning electrode do not overlap. After the completion of the conditioning process, the conditioning electrode is moved by the electrode operating rod to a position where the plurality of gate holes and the electrode openings overlap.

According to a third aspect of the present invention, there is provided a field emission type cold cathode device, comprising: an emitter array in which emitters for emitting electric field in a vacuum are arranged; a gate for controlling field emission from the emitter; A field-emission cold cathode device having an anode into which a field emission current is injected, and a flat plate-shaped element for covering a part of the upper surface of the gate and generating a discharge between the anode and the anode during a conditioning process. It is characterized by comprising a scanning electrode and an electrode operating rod for moving the scanning electrode over the entire surface of the anode during the conditioning process.

In the field emission cold cathode device according to the third aspect of the present invention, at the time of the conditioning process, a discharge is generated between the scan electrode and the anode while partially covering the gate, and the discharge electrode extends over the entire surface of the anode. To move with the electrode operating rod.

According to a fourth aspect of the present invention, in the field emission cold cathode device according to the third aspect of the present invention, the distance between the anode and the central portion is greater in the central portion than in the peripheral portion instead of the flat scan electrode. A short convex scanning electrode is provided.

In the field emission cold cathode device according to the fourth aspect of the present invention, in addition to the function of the third aspect of the invention, a convex scanning electrode is used in which the distance from the anode is shorter at the center than at the periphery. Perform conditioning processing.

According to a fifth aspect of the present invention, in the field emission cold cathode device according to the third or fourth aspect, the scanning electrode or the convex scanning electrode is provided on the gate side of the scanning electrode or the convex scanning electrode. A large insulating plate is attached.

In the field emission cold cathode device according to the fifth aspect of the present invention, in addition to the function of the third or fourth aspect, the conditioning process is performed by an insulating plate provided on the gate side of the scanning electrode or the convex scanning electrode. It catches metal vapor and molten droplets generated at the time.

According to a sixth aspect of the present invention, in the field emission cold cathode device according to any one of the third to fifth aspects, the anode is connected to the scan electrode or the convex after completion of the conditioning process. A notch is provided on the facing surface where the scan electrodes are located.

According to a sixth aspect of the present invention, in addition to the function of the third aspect of the present invention, the field emission cold cathode device is provided on the anode on the opposite surface where the convex scanning electrode is located. The cut-out portion suppresses a decrease in insulation performance of the scanning electrode portion when the element is used.

According to a seventh aspect of the present invention, in the field emission cold cathode device according to the first or second aspect, the electrode operating rod for operating the conditioning electrode is:
It is characterized by being operated by a diaphragm connected while keeping the vacuum container airtight.

In the field emission cold cathode device according to the seventh aspect of the present invention, in addition to the function of the first or second aspect, the electrode operation rod is operated by a diaphragm connected while maintaining the airtightness of the vacuum vessel. Then, the conditioning electrode is operated.

According to an eighth aspect of the invention, in the field emission cold cathode device according to any one of the first to sixth aspects, the conditioning electrode, the scanning electrode or the convex scanning electrode is operated. The electrode operating rod is operated by a bellows connected while maintaining the airtightness of the vacuum vessel.

In the field emission cold cathode device according to the eighth aspect of the present invention, in addition to the function of any one of the first to sixth aspects, the bellows connected while maintaining the airtightness of the vacuum vessel are provided. By operating the electrode operation rod, the conditioning electrode, the scanning electrode or the convex scanning electrode is operated.

According to a ninth aspect of the present invention, there is provided a field emission type cold cathode device, comprising: an emitter array in which an emitter for emitting electric field is arranged in a vacuum vessel; a gate for controlling electric field emission from the emitter; In the field emission cold cathode device having an anode into which a field emission current is injected from, the electrode has an electrode opening extending over a plurality of gate holes provided in the gate; A disk-shaped conditioning electrode for generating a discharge between the electrodes, and a plurality of gate holes and the electrode opening are provided at the center of the disk-shaped conditioning electrode so as not to overlap with each other during the conditioning process. After the completion of the conditioning process, the conditioning is performed at a position where a plurality of gate holes overlap with the electrode openings. Characterized by comprising an electrode operating rod for rotating the ring electrode.

In the field emission cold cathode device according to the ninth aspect of the present invention, at the time of the conditioning process, the electrode operating rod provided at the center of the disc-shaped conditioning electrode is operated to be provided at the gate. The conditioning electrode is rotated to a position where the plurality of gate holes and the electrode openings overlap each other after the conditioning process is completed.

According to a tenth aspect of the present invention, there is provided a field emission type cold cathode device, comprising: an emitter array in which emitters for emitting electric field in a vacuum are arranged; a gate for controlling field emission from the emitter; A field-emission cold-cathode device having an anode into which a field emission current is injected, and a fan-shaped scan for generating a discharge between the anode and the anode during a conditioning process by covering a part of the upper surface of the gate. An electrode, and an electrode operating rod provided at a main position of the fan-shaped scanning electrode and rotating the fan-shaped scanning electrode over the entire surface of the anode in a conditioning process.

In the field emission cold cathode device according to the tenth aspect of the present invention, at the time of conditioning processing, an electrode operating rod provided at a key position of the fan-shaped scan electrode is operated to connect the fan-shaped scan electrode to the anode. Rotate over the entire surface.

The field emission type cold cathode device according to the eleventh aspect of the present invention is the invention according to any one of the first to tenth aspects, wherein after the conditioning process, the conditioning electrode, the scan electrode, At least one of the convex scanning electrode or the electrode operating rod is brought into contact with the gate, and an operating voltage is applied to the electrode operating rod.

In the field emission cold cathode device according to the eleventh aspect of the present invention, in addition to the operation of any one of the first to tenth aspects, after performing the conditioning process, the conditioning electrode, the scan electrode, At least one of the convex scanning electrode or the electrode operating rod is brought into contact with the gate, and an operating voltage is applied to the electrode operating rod.

[0035]

Embodiments of the present invention will be described below. First, the present inventors conducted an experiment in which silicon and high-purity oxygen-free copper were used as a gate material and an anode material, respectively, in order to investigate the basic insulating characteristics of a field emission cold cathode device.

In the experiment, a flat oxygen-free copper electrode or silicon electrode and a rod electrode made of oxygen-free copper having a hemispherical tip were opposed to each other in a vacuum chamber, and a voltage was applied to investigate the change in dielectric breakdown voltage. . As a result, regardless of whether the flat electrode was oxygen-free copper or silicon, the breakdown voltage had an initial value of Vi, but showed a conditioning effect of eventually increasing to Vf by repeating dielectric breakdown. The relationship between Vi and Vf varied, and Vi = (0.2-0.4) × Vf.

Next, the rod electrode is moved in the horizontal direction, and a voltage is applied in such a manner as to oppose the oxygen-free copper flat plate surface and the silicon flat plate surface that have not been subjected to dielectric breakdown. It was measured. As a result, when the flat electrode is made of oxygen-free copper, the initial discharge value decreases, and Via = (0.3 to 0.5) × Vf
Met. On the other hand, when the plate electrode is made of silicon, the initial discharge value hardly decreases, and Via = (0.95-1.0) × V
f.

That is, when the surface condition of the oxygen-free copper bar electrode is improved by conditioning, high insulation performance can be obtained regardless of the position of the silicon flat plate electrode. It is considered that this is because the silicon surface is in a state where the factors causing the decrease in insulation performance as described above are extremely small. Therefore, when silicon is used for the gate and a metal material such as oxygen-free copper is used for the anode, only the anode surface needs to be conditioned.

In order to achieve the object of increasing the voltage and increasing the reliability of the field emission cold cathode device as described above, the present invention is to condition the anode surface without damaging the gate. .

FIG. 1 is a sectional view of a main part showing a structure of a field emission type cold cathode device according to a first embodiment of the present invention. FIG. 1 shows the emitter array and the anode 11 in a vacuum vessel.

In FIG. 1, a flat conditioning electrode 15 is provided on the gate 7, and a hole 15a is provided in the conditioning electrode 15 at a position substantially coincident with the gate hole 7a. The conditioning electrode 15 can be operated by an electrode operation rod 16.

After manufacturing the field emission type cold cathode device having the above structure, when performing a conditioning process of applying a high voltage to improve the insulation performance, as shown in FIG. , Gate hole 7a and electrode hole 15
a should not overlap. In this state, a discharge is generated between the anode 11 and the conditioning electrode 15. Even if a discharge occurs due to this conditioning process, the gate hole 7a and the emitter 4 are protected by the conditioning electrode 15, so that the gate hole 7a
And the emitter 4 is not damaged.

Next, the conditioning process is completed,
After the predetermined insulation performance has been obtained, when used as an element, the conditioning electrode 15
To make the gate hole 7a substantially coincide with the electrode hole 15a as shown in FIG. 1 (b).

Since silicon, which is a gate material, has excellent insulating properties as described above, the electrode holes 15a are made somewhat larger than the gate holes 7a to make the surface of the gate 7 a conditioning electrode due to manufacturing technology. There is no problem even if the portion not covered by 15 increases.

According to the first embodiment, since the conditioning process is performed by protecting the gate hole 7a at the electrode hole 15a of the conditioning electrode 15, the damage to the gate hole 7a and the emitter 4 is prevented. And a field emission type cold cathode device having high insulation performance can be obtained.

Next, a second embodiment of the present invention will be described. FIG. 2 is a schematic view of a main part showing a structure of a field emission cold cathode device according to a second embodiment of the present invention. FIG.
(A) is a plan view of the conditioning electrode 15, FIG.
(B) is a sectional view of an emitter array portion. This second
In the third embodiment, an electrode opening 20 extending over a plurality of gate holes 7a of the gate 7 is provided in place of the electrode holes 15a of the conditioning electrode 15 in the first embodiment shown in FIG. Things.

In FIG. 2, the provision of the plate-like conditioning electrode 15 on the gate 7 is the same as in the first embodiment. In the second embodiment,
As shown in FIG. 2A, the conditioning electrode 15
Are provided with a plurality of openings 20a, and the conditioning electrode 15 is operable by an electrode operating rod (not shown).

FIG. 2B shows a state during the conditioning process. The gate hole 7a and the emitter 4 are covered by the non-opening portion of the conditioning electrode 15, and are not damaged by the discharge. When used as an element, the conditioning electrode 15 is operated by an electrode operating rod (not shown), and the gate hole 7 a and the emitter 4 are located in the electrode opening 20.

In the first embodiment, it may be difficult to match the gate hole 7a with the electrode hole 15a. However, according to the second embodiment, the positioning of the conditioning electrode 15 is performed. Is relatively easy. In the second embodiment, although the integration density of the emitter 4 is reduced to about half, there is no practical problem since a large current density can be obtained as described above.

According to the second embodiment, the conditioning process is performed by protecting the gate hole 7a in the portion other than the electrode opening 20 of the conditioning electrode 15, so that the gate hole 7a and the emitter 4 are protected. A field emission cold cathode device having high insulation performance without causing damage is obtained.

Next, a third embodiment of the present invention will be described. FIG. 3 is a sectional view of a main part showing a structure of a field emission type cold cathode device according to a third embodiment of the present invention. In FIG. 3, a scan electrode 30 in the form of a flat plate covering a part of the upper surface of the gate 7 is provided.

A high voltage is applied between the scanning electrode 30 and the anode 11 via the electrode operation rod 16. Then,
The portion of the anode surface 11a facing the scan electrode 30 is conditioned, and the insulation performance is improved. Then, the scanning electrode 30 is moved by the electrode operating rod 16 so as to face different portions of the anode surface 11a, and a high voltage is applied to discharge. By repeating this, the entire surface of the anode 11 is conditioned, and desired insulation performance is obtained. As described above, since the silicon surface serving as the gate 7 has excellent insulating performance, only the anode 11 needs to be conditioned using the scan electrode 30.

According to the third embodiment, the surface of the anode 11a is conditioned by the scanning electrode 30 to remove factors that lower the insulation performance such as fine particles, projections, oxide films and foreign substances present on the surface 11a. So
High insulation performance between the gate 7 and the silicon can be obtained.

Next, a fourth embodiment of the present invention will be described. FIG. 4 is a sectional view of a main part showing a structure of a field emission type cold cathode device according to a fourth embodiment of the present invention. The fourth embodiment is different from the third embodiment shown in FIG. 3 in that the distance from the anode 11 to the central part is shorter than that from the peripheral part, instead of the plate-like scanning electrode 30. Scan electrode 40
Is provided.

In FIG. 4, there is provided a convex scanning electrode 40 which covers a part of the upper surface of the gate 7 and whose distance from the anode 11 is shorter in the central part than in the peripheral part. In the third embodiment, when a discharge occurs between the flat scan electrode 30 and the anode 11, the discharge tends to concentrate on the end of the scan electrode 30. In particular, when an excessive voltage is applied to enhance the conditioning efficiency, or when the discharge current is increased by reducing the limiting resistance, a metal vapor or a molten droplet is generated from an end portion of the scan electrode 30, and the metal vapor or the molten droplet is generated. Droplets may block the gate holes 7a.

Therefore, as shown in FIG.
The discharge is concentrated in the central portion by making the convex scanning electrode 40 whose distance from the central portion is shorter in the central portion than in the peripheral portion. Thereby, an efficient conditioning process can be performed while suppressing scattering of metal vapor and molten droplets.

In the fourth embodiment, the discharge at the end of the convex scanning electrode 40 can be suppressed, so that the metal vapor or the molten droplet generated at the time of the conditioning is reduced to the gate hole 17.
The electron emission characteristics are not degraded by blocking a or adhering to the tip of the emitter 4.

Next, a fifth embodiment of the present invention will be described. FIG. 5 is a sectional view showing a main part of a structure of a field emission cold cathode device according to a fifth embodiment of the present invention. The fifth embodiment is different from the third embodiment shown in FIG. 3 in that an insulating plate 50 larger than the scanning electrode 30 is attached to the gate 7 side of the scanning electrode 30.

In FIG. 5, a scanning electrode 30 covering a part of the gate 7 is provided, and an insulating plate 50 larger than the scanning electrode 30 is provided on the gate 7 side of the scanning electrode 30. It is stuck. The insulating plate 50 is provided to receive a metal vapor or a molten droplet generated when a discharge occurs between the scan electrode 30 and the anode 11.

FIG. 5 shows the third embodiment in which the plate-like scanning electrode 30 is provided with the insulating plate 50.
Needless to say, the insulating plate 50 may be provided on the convex scanning electrode 40 according to the above embodiment.

According to the fifth embodiment, metal vapor and molten droplets generated when a discharge occurs between the scanning electrode 30 and the anode 11 are received by the insulating plate 50.
Blocking the gate hole 7a is suppressed.

Next, a sixth embodiment of the present invention will be described. FIG. 6 is a sectional view of a main part showing a structure of a field emission type cold cathode device according to a sixth embodiment of the present invention. The sixth embodiment is different from the third embodiment shown in FIG. 3 in that the anode 11 has a cutout 11b on the facing surface where the scanning electrode 30 is located after the completion of the conditioning process. .

In FIG. 6, a scanning electrode 30 covering a part of the gate 7 is provided on the gate 7 and the anode 1
A cutout 11b is provided in a part of the part 1 at a part facing the position of the scanning electrode 30 during operation of the element. The notch 11b is provided to prevent the electric field of the scan electrode 30 from being higher than the surface of the gate 7 during operation of the device after the completion of the conditioning process.

FIG. 6 shows the anode 1 according to the third embodiment.
Although the cutout 11b is shown in FIG. 1, it goes without saying that the cutout 11b may be formed in the anode 11 of the fourth or fifth embodiment.

According to the sixth embodiment, during operation of the element, the scanning electrode 3 which is higher than the surface of the gate 7
Since an increase in the electric field of 0 can be suppressed, and a decrease in the insulation performance of the scanning electrode 30 during use of the element can be suppressed, a field emission type cold cathode element with high breakdown voltage and high reliability can be obtained.

Next, a seventh embodiment of the present invention will be described. FIG. 7 is a sectional view of a main part showing a structure of a field emission type cold cathode device according to a seventh embodiment of the present invention. The seventh embodiment differs from the first embodiment shown in FIG. 1 in that the electrode operation rod 16 for operating the conditioning electrode 15 is operated by a diaphragm 71 connected while maintaining the airtightness of the vacuum vessel. It is made to be done.

In FIG. 7, an electrode operating rod 16 connected to a plate-like conditioning electrode 15 provided on the upper surface of a gate 7 has a shield opening 13 a of a shield 13.
In addition, it penetrates through the insulating cylinder opening 1a of the insulating cylinder 1 and has one end joined to a diaphragm 71 hermetically joined to the other end of the introduction fitting hermetically joined to the insulating cylinder opening 1a. That is, the electrode operation rod 16 can be operated while the vacuum of the vacuum container formed by the emitter-side flange 2, the anode-side flange 3, and the insulating cylinder 1 is maintained. Since the moving distance of the conditioning electrode 15 is small, a diaphragm that allows the electrode operation rod 16 to slightly move can be used, and a low-cost and compact configuration can be achieved.

When the gate holes 7a and the electrode holes 15a are made substantially coincident with each other after the conditioning process to perform the operation of the device, the conditioning electrode 15 is brought into contact with the gate 7 to perform the operation. Set to the potential. Thereby, the conditioning electrode 1
The electron emission amount can be controlled by applying a voltage between the electrode operation rod 16 and the emitter 4. That is, the gate lead 9 connected to the gate 7 in the conventional example of FIG. 11 becomes unnecessary.

In the seventh embodiment, since the conditioning electrode 15 can be operated while maintaining the airtightness of the vacuum vessel, an inexpensive and compact field emission cold cathode device can be obtained. Further, since the gate lead 9 becomes unnecessary, the structure can be simplified and a highly reliable field emission cold cathode device can be obtained.

Next, an eighth embodiment of the present invention will be described. FIG. 8 is a sectional view showing a main part of a structure of a field emission cold cathode device according to an eighth embodiment of the present invention. The eighth embodiment is different from the first embodiment shown in FIG. 1 in that the electrode operation rod 16 for operating the scanning electrode 30 is operated by a bellows 80 connected while maintaining the airtightness of the vacuum vessel. It is made to be done.

In FIG. 8, the electrode operation rod 16 connected to the scanning electrode 30 provided on a part of the upper surface of the gate 7 passes through the shield opening 13a of the shield 13 and the insulating cylinder opening 1a of the insulating cylinder 1. In addition, one end is joined to a bellows 80 hermetically joined to the other end of the introduction fitting hermetically joined to the insulating cylinder opening 1a. That is, the electrode operation rod 16 can be operated while the vacuum of the vacuum container formed by the emitter-side flange 2, the anode-side flange 3, and the insulating cylinder 1 is maintained. In this case, the bellows 80 is used because the moving distance of the scanning electrode 30 is relatively large and the scanning electrode 30 needs to move back and forth and left and right.

FIG. 8 shows a case in which the electrode operating rod 16 connected to the scanning electrode 30 is operated by the bellows 80.
The electrode operating rod 16 connected to the convex scanning electrode 40 or the conditioning electrode 15 may be operated by the bellows 80.

After performing the conditioning process, the scanning electrode 30 or the electrode operating rod 16 is brought into contact with a part of the gate 7 so as to have the same potential. Thus, the amount of electron emission can be controlled by applying a voltage between the electrode operation rod 16 and the emitter 4. That is, the gate lead 9 connected to the gate 7 in the conventional example of FIG. 11 becomes unnecessary.

In the eighth embodiment, the conditioning electrode 15, the scan electrode 30, or the convex scan electrode 40
Can be operated while keeping the airtightness of the vacuum container, so that an inexpensive and compact field emission cold cathode device can be obtained. Further, since the gate lead 9 becomes unnecessary, the structure can be simplified and a highly reliable field emission cold cathode device can be obtained.

Next, a ninth embodiment of the present invention will be described. FIG. 9 is a schematic view of a main part showing a structure of a field emission cold cathode device according to a ninth embodiment of the present invention. FIG.
(A) is a plan view of the conditioning electrode 15, and FIG.
(B) is a sectional view of an emitter array portion. This ninth
This embodiment is different from the second embodiment shown in FIG. 2 in that a disk-shaped conditioning electrode 15 is used in place of a plate-shaped conditioning electrode, and an electrode operation rod 16 is used for the disk-shaped conditioning electrode 15. It is provided at the center.

As shown in FIG. 9A, the conditioning electrode 15 is formed in a disk shape, and is provided with a plurality of slit-shaped electrode openings 20 in the radial direction. This disk-shaped conditioning electrode 15 is disposed on the upper surface of the gate 7 as shown in FIG. An electrode operating rod 20 is provided at the center of the conditioning electrode 15, and by rotating the electrode operating rod 20, the conditioning electrode 15 can be rotated.

FIG. 9 (b) shows a magnetic coupling type rotation introducing device for rotating the conditioning electrode 15 and the electrode operation rod 16 while maintaining the airtightness of the vacuum vessel. That is, a magnetic body 92 is connected to the other end of the electrode operation rod 16 and the magnetic body 92 is rotated by a magnet 93 from outside the vacuum vessel.
Thereby, at the time of the conditioning process, the plurality of gate holes 7a and the electrode openings 20 are set at positions where they do not overlap,
After the completion of the conditioning process, a plurality of gate holes 7
The conditioning electrode 15 is rotated to a position where the “a” and the electrode opening 20 overlap.

According to the ninth embodiment, the electrode operating rod 1
Since the electrode opening 16 of the conditioning electrode 15 can be moved only by rotating the electrode 6, there is no need to provide an opening in the shield or the insulating cylinder. Therefore, a field emission type cold cathode device having excellent reliability can be obtained.

Next, a tenth embodiment of the present invention will be described. FIG. 10 is a schematic view of a main part showing a structure of a field emission cold cathode device according to a tenth embodiment of the present invention.
FIG. 10A is a plan view of the scanning electrode 30, and FIG. 10B is a cross-sectional view of the emitter array. This tenth embodiment is different from the ninth embodiment shown in FIG. 9 in that a sector-shaped scanning electrode 30 is used instead of the disk-shaped conditioning electrode, and the electrode operating rod 16 is a sector-shaped scanning electrode 30. It is provided at a key position of.

As shown in FIG. 10A, the scanning electrode 30
Are formed in a fan shape, and the fan-shaped scanning electrode 30 is
As shown in (b), it is arranged so as to cover a part of the upper surface of the gate 7. The electrode operating rod 16 is located at the required position of the sector electrode 30.
The scanning electrode 30 can be rotated by rotating the electrode operation rod 16.

In FIG. 10B, as in the ninth embodiment, the scan electrodes 30 are maintained while maintaining the airtightness of the vacuum container.
In addition, a magnetic coupling type rotation introducing device for rotating the electrode operation rod 16 is shown. That is, a magnetic body 92 is connected to the other end of the electrode operation rod 16 and the magnetic body 92 is rotated by a magnet 93 from outside the vacuum vessel.

The scanning electrode 30 is rotated via the electrode operating rod 16, and the surface of the anode facing the scanning electrode 30 is sequentially subjected to conditioning processing. As a result, the entire surface of the anode 11 is conditioned, and the desired insulation performance is obtained.

According to the tenth embodiment, similarly to the ninth embodiment, the electrode opening 16 of the conditioning electrode 15 can be moved only by rotating the electrode operation rod 16, so that the shield There is no need to provide an opening in the insulating cylinder. Therefore, a field emission type cold cathode device having excellent reliability can be obtained.

Here, the field emission type cold cathode device of the present invention can be used for a power switching device and a power switch. In other words, the field emission type cold cathode device with high insulation performance is used as a power switching device or power switch device, so it is significantly smaller and has a higher voltage than conventional semiconductor switching devices and switches / breakers. It is possible to provide a device that uses a power switching element with low loss and high reliability, as well as high efficiency.

[0085]

As described above, according to the first aspect of the present invention,
According to the present invention described in claim 2 and in the portion other than the electrode holes or electrode openings of the conditioning electrode,
Since the conditioning process is performed while protecting the gate hole, the field emission cold cathode device having high insulation performance without damaging the gate hole and the emitter can be obtained.

Further, in the present invention according to claims 3 to 5, conditioning of the anode surface by the scanning electrode is performed to remove factors that lower the insulation performance such as fine particles, protrusions, oxide films and foreign substances present on the surface, It is possible to have a high insulation performance between the silicon gate and the silicon gate, which is essentially reduced in these insulation performance reduction factors. In particular, by suppressing discharge at the end of the scan electrode, or by providing an insulating plate on the back of the scan electrode, metal vapor or molten droplets generated during conditioning block the gate hole or adhere to the tip of the emitter. Conditioning can be performed efficiently without deteriorating the electron emission characteristics
A field emission cold cathode device having excellent productivity and high reliability can be obtained.

Further, according to the invention of claim 6, since the deterioration of the insulation performance of the scanning electrode portion during use of the element can be suppressed, a field emission type cold cathode element having high withstand voltage and high reliability can be obtained.

According to the present invention, since the conditioning electrode and the scanning electrode can be operated while maintaining the airtightness of the vacuum vessel, an inexpensive and compact field emission cold cathode device can be obtained. it can.

According to the ninth and tenth aspects of the present invention, it is not necessary to provide an opening in the shield or the insulating cylinder to move the conditioning electrode and the scanning electrode, and therefore, the field emission type cold cathode having excellent reliability is provided. It can be an element.

According to the eleventh aspect of the present invention, since a gate lead is not required, the structure can be simplified and a highly reliable field emission cold cathode device can be obtained.

[Brief description of the drawings]

FIG. 1 is an essential part cross-sectional view showing a structure of a field emission type cold cathode device according to a first embodiment of the present invention.

FIG. 2 is a main part schematic diagram showing the structure of a field emission type cold cathode device according to a second embodiment of the present invention.

FIG. 3 is an essential part cross-sectional view showing a structure of a field emission cold cathode device according to a third embodiment of the present invention.

FIG. 4 is an essential part cross-sectional view showing a structure of a field emission type cold cathode device according to a fourth embodiment of the present invention.

FIG. 5 is an essential part cross-sectional view showing the structure of a field emission cold cathode device according to a fifth embodiment of the present invention.

FIG. 6 is an essential part cross-sectional view showing a structure of a field emission cold cathode device according to a sixth embodiment of the present invention.

FIG. 7 is an essential part cross-sectional view showing the structure of a field emission cold cathode device according to a seventh embodiment of the present invention.

FIG. 8 is an essential part cross-sectional view showing a structure of a field emission cold cathode device according to an eighth embodiment of the present invention.

FIG. 9 is a main part schematic diagram showing the structure of a field emission cold cathode device according to a ninth embodiment of the present invention.

FIG. 10 is a main part schematic diagram showing the structure of a field emission type cold cathode device according to a tenth embodiment of the present invention.

FIG. 11 is a sectional view showing the basic structure of a conventional field emission cold cathode device.

[Explanation of symbols]

4 Emitter 7 Gate 7a Gate hole 11
Anode 11b Notch 15 Conditioning electrode 15a Electrode hole 16 Electrode operating rod 16
Electrode opening 30 Scanning electrode 40 Convex scanning electrode 5
0 Insulating plate 71 Diaphragm 80 Bellows

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Tadashi Sakai 1-term, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa F-term in Toshiba R & D Center (reference) 5C012 VV01 VV10

Claims (11)

[Claims] An emitter array in which an emitter for emitting electric field is arranged in a vacuum vessel, a gate for controlling electric field emission from the emitter, and an anode to which a field emission current from the emitter is injected. In the field emission type cold cathode device, a plate-shaped conditioning for generating a discharge between the anode and the anode during conditioning processing, having an electrode hole substantially at the same position as the gate hole provided in the gate. The electrode and the conditioning hole are moved to a position where the gate hole and the electrode hole do not overlap during the conditioning process, and the conditioning electrode is moved to a position where the gate hole and the electrode hole match after the completion of the conditioning process. A field operation type cold cathode device comprising: 2. An emitter array in which emitters for emitting electric field are arranged in a vacuum vessel, a gate for controlling electric field emission from the emitter, and an anode into which electric field emission current from the emitter is injected. In the field emission cold cathode device, a flat conditioning electrode having an electrode opening extending over a plurality of gate holes provided in the gate and generating a discharge with the anode during conditioning processing. And moving the conditioning electrode to a position where a plurality of gate holes do not overlap with the electrode opening during the conditioning process and a position where the plurality of gate holes overlap with the electrode opening after completing the conditioning process. A field operation type cold cathode device comprising: 3. An emitter array in which emitters for emitting electric field in a vacuum are arranged, a gate for controlling electric field emission from the emitter, and an anode into which electric field emission current from the emitter is injected. In the field emission cold cathode device, a flat scan electrode for covering a part of the upper surface of the gate and generating a discharge between the anode during the conditioning process and the scan electrode during the conditioning process. An electrode operating rod for moving the entire surface of the anode. 4. The electric field according to claim 3, wherein a convex scanning electrode whose distance from the anode is shorter at a central portion than at a peripheral portion is provided in place of the plate-like scanning electrode. Emission type cold cathode device. 5. The scanning electrode or the convex scanning electrode, wherein an insulating plate larger than the scanning electrode or the convex scanning electrode is attached to a gate side of the scanning electrode or the convex scanning electrode.
3. The field emission cold cathode device according to item 1. 6. The anode according to claim 3, wherein the anode has a cutout on an opposing surface where the scan electrode or the convex scan electrode is located after the conditioning process is completed. Item 2. A field emission cold cathode device according to item 1. 7. The field emission device according to claim 1, wherein the electrode operation rod for operating the conditioning electrode is operated by a diaphragm connected while maintaining the airtightness of the vacuum vessel. Type cold cathode device. 8. An electrode operating rod for operating the conditioning electrode, the scan electrode or the convex scan electrode is operated by a bellows connected to the vacuum vessel while keeping the vacuum vessel airtight. The field emission cold cathode device according to claim 1. 9. An emitter array having an emitter for emitting electric field in a vacuum vessel, a gate for controlling electric field emission from the emitter, and an anode to which a field emission current from the emitter is injected. A field-emission cold cathode device, comprising: an electrode opening extending over a plurality of gate holes provided in the gate; and a disk-shaped conditioning for generating a discharge between the anode and the anode during a conditioning process. An electrode, provided at the center of the disc-shaped conditioning electrode, is a position where a plurality of gate holes and the electrode opening do not overlap during the conditioning process, and a plurality of gate holes after the completion of the conditioning process. An electrode operating rod for rotating the conditioning electrode at a position where the electrode opening overlaps the electrode opening; A field emission cold cathode device characterized by the above-mentioned. 10. An emitter array in which emitters for emitting electric field in a vacuum are arranged, a gate for controlling electric field emission from the emitter, and an anode to which electric field emission current from the emitter is injected. In the field emission type cold cathode device, a fan-shaped scanning electrode for covering a part of the upper surface of the gate and generating a discharge between the anode and the anode during a conditioning process, and provided at a key position of the fan-shaped scanning electrode. An electrode operating rod for rotating the fan-shaped scanning electrode over the entire surface of the anode during the conditioning process. 11. After performing the conditioning process, the conditioning electrode, the scan electrode,
The operating voltage is applied to the electrode operation rod by bringing at least one of the convex scanning electrode or the electrode operation rod into contact with the gate, and the operating voltage is applied to the electrode operation rod. Field emission cold cathode device.