JP2001127357A5

JP2001127357A5 -

Info

Publication number: JP2001127357A5
Application number: JP1999303953A
Authority: JP
Filing date: 1999-10-26
Publication date: 2005-10-27

Claims

The insulating substrate (91) has a laminated structure in which a first strain imparting layer (61) , a first phase transformation layer (71) , and a second strain imparting layer (62) are provided on the uppermost layer, and an electrode The thickness of the first phase transformation layer between the first and second strain-imparting layers is such that when there is no weak magnetic field such as a magnetic medium, the tunnel phenomenon has a larger electrical resistance value, but due to the action of a weak external magnetic field. The thickness is such that the phase transformation of the insulator → metal occurs and the electric resistance value is greatly reduced. The first and second strain imparting layers are suitable for the first phase transformation layer in the vicinity of the device operating temperature. A tunnel phase transformation magnetoresistive (TPMR) element based on the principle of tunnel effect and magnetically induced phase transformation effect, characterized in that it is a metal and an alloy capable of imparting strain.

On the insulating substrate (91) , the second strain imparting layer (62) , the first phase transformation layer (71) , the first strain imparting layer (61) , the second phase transformation layer (72) , and the uppermost layer Thickness of the first and second phase transformation layers between the first and third strain imparting layers having the laminated structure and having the laminated structure provided with the third strain imparting layer (63) , and the first and third strain imparting layers. When there is no weak magnetic field such as a magnetic medium, the tunnel phenomenon has a larger electrical resistance value, but when an external magnetic field is present, the weak magnetic field causes an insulator to metal phase transformation, The thickness of the first, second and third strain imparting layers can impart appropriate strain to the first and second phase transformation layers in the vicinity of the operating temperature of the device. The tunnel effect according to claim 1, wherein the tunnel effect And a tunnel phase transformation magnetoresistive (TPMR) element having two tunnel circuits based on the principle of the magnetically induced phase transformation effect.

On the insulating substrate (91), the first strain imparting layer (61), the first phase transformation electrode layer (76) , and the second strain imparting layer (62) provided on the uppermost layer have a laminated structure, The thickness of the first phase transformation electrode layer is such that when a weak magnetic field such as a magnetic medium does not exist, the first phase transformation electrode layer is an insulator and thus has a large electric resistance value. When it acts, the thickness of the insulator → metal phase transformation is generated and the electric resistance value is greatly reduced, and the first and second strain imparting layers are formed on the first phase transformation electrode layer in the vicinity of the device operating temperature, A first phase based on the principle of a magnetically induced phase transformation effect, characterized in that it is a metal and alloy that imparts an appropriate strain and adjusts the transformation temperature, the others having the form of claim 1 A phase transformation magnetoresistive (PMR) element that causes a change in electrical resistance value in the transformation layer electrode itself.

On the insulating substrate (91) , the second strain imparting layer (62) , the first phase transformation electrode layer (76) , the first strain imparting layer (61) , the second phase transformation electrode layer (77) , and the outermost When the upper layer is provided with a third strain imparting layer (63) and has a laminated structure, and the thickness of the first and second phase transformation electrode layers (76, 77) is such that a weak magnetic field such as a magnetic medium does not exist, Since the first and second phase transformation electrode layers are insulators, they have a large electric resistance value. However, when a weak external magnetic field acts, a phase transformation of insulator → metal occurs, and the electric resistance value greatly decreases. The first, second, and third strain imparting layers are metals and alloys that can impart an appropriate strain to the first and second phase transformation electrode layers in the vicinity of the device operating temperature. The electrical resistance of the first and second phase change layer electrodes themselves , characterized in that it has the form of claim 2. A form of phase transformation magnetoresistive (PMR) element having two circuits based on the principle of a magnetically induced phase transformation effect with variable values.

As the J component constituting the first and second strain imparting layers (61, 62), nonmagnetic material, Cu, which is a good conductor, Al and other metals and alloys, doped semiconductors, and L _1-x1-x Q _xx MnO _3Three , 0 20225 ≦ x ≦ 1 (Wherein L is a rare earth metal such as Gd, La, Nd and Pr, and there is Ca, Sr, Ba, etc. as Q replacing the L site), a manganite having a perovskite structure, and Bi, which is a semimetal, and alloys thereof, SiO _3Three , PrNiO _3Three As a B component constituting the insulating substrate (91), alumina having a nonmagnetic characteristic (Al ₂₂ O _3Three ) Or SiO ₂₂ , As the H component constituting the first phase transformation layer (71), _1-x1-x Q _xx MnO _3Three , 0 ≦ x ≦ 1 (Where L is a rare earth metal such as Gd, La, Nd, or Pr, and there is a metal such as Ca, Sr, or Ba as Q for substituting the L site). perovskite 2) The tunnel phase transformation according to claim 1, characterized in that it uses manganite having a structure, Bi, which is a semimetal, or an alloy thereof, and is based on a spin-dependent tunnel effect and a magnetically induced phase transformation effect. Magnetism Air resistance (TPMR) element.

As J component constituting the first, second and third strain imparting layers (61, 62, 63), nonmagnetic material, Cu as a good conductor, Al and other metals and alloys, doped semiconductor, and L _1-x1-x Q _xx MnO _3Three , 0 ≦ x ≦ 1 (Wherein L is a rare earth metal such as Gd, La, Nd and Pr, and there is Ca, Sr, Ba, etc. as Q replacing the L site), a manganite having a perovskite structure, and Bi, which is a semimetal, and alloys thereof, SiO _3Three , PrNiO _3Three As a B component constituting the insulating substrate (91), alumina having a nonmagnetic characteristic (Al ₂₂ O _3Three ) Or SiO ₂₂ , Etc. are used as H components constituting the first and second phase change layers (71, 72), respectively. _1-x1-x Q _xx MnO _3Three , 0 ≦ x ≦ 1 (Where L is a rare earth metal such as Gd, La, Nd, or Pr, and there is a metal such as Ca, Sr, or Ba as Q for substituting the L site). perovskite 3) The tunnel phase transformation according to claim 2, characterized by using Bi or its alloy which is a manganite or semimetal having a structure and based on the principle of spin-dependent tunnel effect and magnetically induced phase transformation effect. Magnetoresistive (TPMR) element.

As the J component constituting the first and second strain imparting layers (61, 62), nonmagnetic material, Cu, which is a good conductor, Al and other metals and alloys, doped semiconductors, and L _1-x1-x Q _xx MnO _3Three , 0 ≦ x ≦ 1 (Wherein L is a rare earth metal such as Gd, La, Nd and Pr, and there is Ca, Sr, Ba, etc. as Q replacing the L site), a manganite having a perovskite structure, and Bi, which is a semimetal, and alloys thereof, SiO _3Three , PrNiO _3Three As a B component constituting the insulating substrate (91), alumina having a nonmagnetic characteristic (Al ₂₂ O _3Three ) Or SiO ₂₂ , Are used as the H component constituting the first phase transformation electrode layer (76). _1-x1-x Q _xx MnO _3Three , 0 ≦ x ≦ 1 (Where L is a rare earth metal such as Gd, La, Nd, or Pr, and there is a metal such as Ca, Sr, or Ba as Q for substituting the L site). perovskite ) Using manganite having a structure, Bi, which is a metalloid, or an alloy thereof, which is based on a magnetically induced phase transformation effect in which the electric resistance value of the first phase transformation layer electrode itself changes. The phase change magnetoresistive (PMR) element according to claim 3.

As J component constituting the first, second and third strain imparting layers (61, 62, 63), nonmagnetic material, Cu as a good conductor, Al and other metals and alloys, doped semiconductor, and L _1-x1-x Q _xx MnO _3Three , 0 ≦ x ≦ 1 (Wherein L is a rare earth metal such as Gd, La, Nd and Pr, and there is Ca, Sr, Ba, etc. as Q replacing the L site), a manganite having a perovskite structure, and Bi, which is a semimetal, and alloys thereof, SiO _3Three , PrNiO _3Three As a B component constituting the insulating substrate (91), alumina having a nonmagnetic characteristic (Al ₂₂ O _3Three ) Or SiO ₂₂ , Are used as the H component constituting the first and second phase transformation electrode layers (76, 77), respectively. _1-x1-x Q _xx MnO _3Three , 0 ≦ x ≦ 1 (Where L is a rare earth metal such as Gd, La, Nd, or Pr, and there is a metal such as Ca, Sr, or Ba as Q for substituting the L site). perovskite ) Bi- or its alloy, which is a manganite or metalloid having a structure, is used, and a magnetically induced phase transformation effect in which the electrical resistance values of the first and second phase transformation layer electrodes themselves are changed. The phase change magnetoresistive (PMR) element according to claim 4, which is a principle.

As the D component constituting the shielding layer 101, FeSi alloy, amorphous alloy (FeNiMoSiB, FeCoSiB, CoMnB, CoHfB, FeCoNbSiB, FeNiPB, etc.), cubic spinel ferrite (MeFe) ₂₂ O _4Four Where Me is Mn, Fe, Co, Ni, Cu, Zn, Mg and Cd, or a combination of these metals, such as MnZn, NiZn, LiZn, MgZn, MnMg, MnCu and LiNi alloys) 3. The tunnel phase transformation magnetoresistive (TPMR) element according to claim 1, wherein NiCuCoMnAl ferrite and yttrium / iron / garnet mixed oxide are used.

As a D component constituting the shielding layer 101, FeSi alloy, amorphous alloy (FeNiMoSiB, FeCoSiB, CoMnB, CoHfB, FeCoNbSiB) And FeNiPB, etc.), cubic spinel ferrite (MeFe) ₂₂ O _4Four Where Me is Mn, Fe, Co, Ni, Cu, Zn, Mg and Cd, or a combination of these metals, such as MnZn, NiZn, LiZn, MgZn, MnMg, MnCu and LiNi alloys) 5. The phase change magnetoresistive (PMR) element according to claim 3, wherein NiCuCoMnAl ferrite and yttrium / iron / garnet mixed oxide are used.