JP2001111105A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP2001111105A JP2001111105A JP28841799A JP28841799A JP2001111105A JP 2001111105 A JP2001111105 A JP 2001111105A JP 28841799 A JP28841799 A JP 28841799A JP 28841799 A JP28841799 A JP 28841799A JP 2001111105 A JP2001111105 A JP 2001111105A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- layer
- emitting diode
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は発光効率が高い発光
ダイオードに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode having high luminous efficiency.
【０００２】[0002]
【従来の技術】発光ダイオード（ＬＥＤ）は各種表示用
光源として広く用いられている。特に屋外ディスプレイ
や交通信号用光源は高出力、低消費電力で、しかも低価
格であることが求められている。2. Description of the Related Art Light emitting diodes (LEDs) are widely used as light sources for various displays. In particular, outdoor displays and light sources for traffic signals are required to have high output, low power consumption, and low cost.
【０００３】そのため、ＡｌＧａＩｎＰ系の可視光ＬＥ
Ｄにおいては、ウインドウ層を十分厚くし、電流分散並
びに光取出効率を大きくして、高出力及び低消費電力を
実現している。For this reason, visible light LE of AlGaInP type is used.
In D, the window layer is made sufficiently thick, the current dispersion and the light extraction efficiency are increased, and high output and low power consumption are realized.
【０００４】このような従来のＬＥＤの一つとして、例
えば、アプライド・フィジックス・レターズ第６１巻ｐ
ｐ．１０４５−１０４７に開示されるように、ウインド
ウ層以外のＬＥＤ構成層を有機金属化合物気相エピタキ
シャル成長法（ＭＯＶＰＥ法）で成長し、ウインドウ層
を水素化物気相成長法（ＨＶＰＥ法）で成長させるよう
にしている。この場合、ＨＶＰＥ法の成膜速度がＭＯＶ
ＰＥ法の成膜速度よりも一桁程度高いことを利用して、
ウインドウ層厚を容易に数十マイクロメートル程度に厚
膜化することができ、これにより、容易に高出力のＬＥ
Ｄを実現している。As one of such conventional LEDs, for example, Applied Physics Letters Vol. 61, p.
p. As disclosed in Patent Documents 1045 to 1047, an LED constituent layer other than a window layer is grown by metalorganic compound vapor phase epitaxy (MOVPE), and the window layer is grown by hydride vapor phase epitaxy (HVPE). I have to. In this case, the film formation rate of the HVPE method is MOV
Utilizing that it is about one digit higher than the deposition rate of the PE method,
The thickness of the window layer can be easily increased to about several tens of micrometers, which makes it easy to obtain a high-output LE.
D is realized.
【０００５】しかしながら、ウインドウ層以外のＬＥＤ
構成層をＭＯＶＰＥ法で成長させ、ウインドウ層をＨＶ
ＰＥ法で成長させるという、二度の成長を行う必要があ
ることから、低価格での製作が難しいという問題があ
る。However, LEDs other than the window layer
The constituent layer is grown by MOVPE, and the window layer is
There is a problem that it is difficult to manufacture at a low price because it is necessary to perform the growth twice, that is, to grow by the PE method.
【０００６】そこで、ジャーナル・オブ・クリスタル・
グロース第１４２巻ｐｐ．１５−２０に開示されている
ように、ウインドウ層を含むすべてのＬＥＤ構成層をＭ
ＯＶＰＥ法で成長することで、低価格での製作が行え
る。Therefore, the Journal of Crystal
Growth Volume 142 pp. 15-20, all LED component layers, including the window layer, are
By growing by the OVPE method, it can be manufactured at low cost.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、ウイン
ドウ層を含むすべてのＬＥＤ構成層をＭＯＶＰＥ法で成
長する場合には、ＨＶＰＥ法と比べてＭＯＶＰＥ法の成
膜速度は一桁程度遅く、成長中の加熱時間が長くなり、
ウインドウ層の厚膜化により、ｐ型の導電性を生じせし
めるためのクラッド層に添加する不純物（ｐ型ドーパン
ト）が、クラッド層から発光部に対し拡散して発光出力
を低下させてしまうため、高出力化が困難であるという
問題がある。However, when all the LED constituent layers including the window layer are grown by the MOVPE method, the film forming rate of the MOVPE method is about one digit slower than that of the HVPE method. The heating time is longer,
As the thickness of the window layer is increased, an impurity (p-type dopant) added to the clad layer for generating p-type conductivity is diffused from the clad layer to the light-emitting portion, thereby lowering the light-emission output. There is a problem that it is difficult to increase the output.
【０００８】本発明の目的は、このような従来のＬＥＤ
の欠点を除去し、光取出効率が高くて発光出力が大き
く、しかも製作が容易で低価格な発光ダイオードを提供
することにある。An object of the present invention is to provide such a conventional LED.
An object of the present invention is to provide a light emitting diode which has a high light extraction efficiency and a large light emitting output, is easy to manufacture, and is inexpensive.
【０００９】[0009]
【課題を解決するための手段】本発明は上記目的を達成
するために、請求項１の発明は、ｎ型導電性のＧａＡｓ
基板上に、有機金属化合物気相成長法によりエピタキシ
ャル成長にてＡｌＧａＩｎＰからなる発光部とその発光
部上にウインドウ層を形成して構成される発光ダイオー
ドにおいて、発光部の発光に対し透明な層を、厚さ１．
５μｍ以上で、かつ、発光部よりもＧａＡｓ基板側に位
置して形成する発光ダイオードである。In order to achieve the above object, the present invention provides an n-type conductive GaAs.
On a substrate, a light emitting portion made of AlGaInP and a window layer formed on the light emitting portion by epitaxial growth by an organometallic compound vapor phase epitaxy method. Thickness 1.
The light emitting diode is formed to be 5 μm or more and located closer to the GaAs substrate than the light emitting unit.
【００１０】請求項２の発明は、発光部の発光に対し透
明な層の一部または全部が、ＡｌＧａＩｎＰまたはＡｌ
ＩｎＰからなる請求項１記載の発光ダイオードである。According to a second aspect of the present invention, a part or all of the layer transparent to light emission of the light emitting portion is made of AlGaInP or AlGaInP.
2. The light emitting diode according to claim 1, comprising InP.
【００１１】請求項３の発明は、発光部の発光に対し透
明な層の一部または全部が、ＡｌＧａＡｓまたはＡｌＡ
ｓからなる請求項１または２記載の発光ダイオードであ
る。According to a third aspect of the present invention, a part or all of the layer transparent to the light emission of the light emitting part is made of AlGaAs or AlA.
3. The light emitting diode according to claim 1, wherein the light emitting diode comprises s.
【００１２】請求項４の発明は、発光部は量子井戸構造
である請求項１〜３いずれかに記載の発光ダイオードで
ある。According to a fourth aspect of the present invention, there is provided the light emitting diode according to any one of the first to third aspects, wherein the light emitting section has a quantum well structure.
【００１３】請求項５の発明は、発光部の発光に対し透
明な層とＧａＡｓ基板との間に、発光部の発光波長が最
大反射率となる分布ブラッグ反射膜を具備する請求項１
〜４いずれかに記載の発光ダイオードである。According to a fifth aspect of the present invention, there is provided a distributed Bragg reflection film in which the emission wavelength of the light emitting portion has a maximum reflectance between the layer transparent to the light emission of the light emitting portion and the GaAs substrate.
5. The light-emitting diode according to any one of items 1 to 4.
【００１４】上記構成によれば、ＡｌＧａＩｎＰの発光
部よりも基板側に位置して層厚１．５μｍ以上の透明な
層を形成することで、発光部から発光される光が、ＬＥ
Ｄチップ内で反射されて最終的に吸収されてしまう割合
が小さくなり、高出力化が図れる。According to the above configuration, by forming a transparent layer having a layer thickness of 1.5 μm or more at a position closer to the substrate than the AlGaInP light emitting portion, light emitted from the light emitting portion can be emitted by the LE.
The ratio of reflection in the D chip and ultimate absorption is reduced, and high output can be achieved.
【００１５】このため、従来ほどウインドウ層の厚膜化
を行うことなく、有機金属化合物気相成長法にてＬＥＤ
を製作できるため、製作が容易でかつ低価格な発光ダイ
オードが実現できる。[0015] Therefore, without increasing the thickness of the window layer as in the prior art, the LED is formed by the metalorganic compound vapor deposition method.
Therefore, a light emitting diode which is easy to manufacture and inexpensive can be realized.
【００１６】[0016]
【発明の実施の形態】以下に、本発明の好適実施の形態
を添付図面にしたがって説明する。Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
【００１７】図１は、本発明の好適実施の形態である発
光ダイオードの拡大横断面図を示したものである。FIG. 1 is an enlarged cross-sectional view of a light emitting diode according to a preferred embodiment of the present invention.
【００１８】図１に示すように、本発明の発光ダイオー
ド１は、ｎ型導電性のＧａＡｓ基板上２に、有機金属化
合物気相成長法（ＭＯＶＰＥ法）により順次エピタキシ
ャル成長され、発光部５とその発光部５上にウインドウ
層７を形成して構成され、さらに、その発光部５をＡｌ
ＧａＩｎＰで形成し、この発光部５の発光に対し透明な
層４を、厚さ１．５μｍ以上で、かつ、発光部５よりも
ＧａＡｓ基板２側に位置して形成して構成される。As shown in FIG. 1, a light emitting diode 1 of the present invention is epitaxially grown on an n-type conductive GaAs substrate 2 by a metal organic compound vapor phase epitaxy (MOVPE) method. A window layer 7 is formed on the light emitting section 5, and the light emitting section 5 is
The light emitting unit 5 is formed of GaInP, and the transparent layer 4 is formed to have a thickness of 1.5 μm or more and to be positioned closer to the GaAs substrate 2 than the light emitting unit 5.
【００１９】次に、本発明の発光ダイオード１の構成を
より具体的に説明する。Next, the structure of the light emitting diode 1 of the present invention will be described more specifically.
【００２０】本発明の発光ダイオード１は、ｎ型導電性
のＧａＡｓ基板上２に、ＭＯＶＰＥ法により順次エピタ
キシャル成長させていく要領でＬＥＤ各構成層を形成し
ていく。In the light emitting diode 1 of the present invention, each constituent layer of the LED is formed on an n-type conductive GaAs substrate 2 in the manner of sequentially growing epitaxially by the MOVPE method.
【００２１】まず、本発明の発光ダイオード１は、ｎ型
導電性のＧａＡｓ基板上２に、Ｓｅが添加されｎ型の導
電性を有するＳｅ−ＧａＡｓバッファ層３を形成し、次
に、ＧａＡｓに格子整合し、間接遷移型のバンド構造
で、Ｓｅが添加されｎ型の導電性を有し、厚さｄ4 が
１．５μｍ以上のＳｅ−ＡｌＧａＩｎＰクラッド層４を
形成し、さらに、ＧａＡｓに格子整合し、直接遷移型の
バンド構造を有し、厚さｄ5 が０．４〜１．０μｍのｕ
ｎ−ＡｌＧａＩｎＰ活性層５を形成する。First, in the light emitting diode 1 of the present invention, a Se-GaAs buffer layer 3 having an n-type conductivity by adding Se is formed on an n-type GaAs substrate 2. A Se-AlGaInP cladding layer 4 is lattice-matched, has an indirect transition type band structure, is doped with Se, has n-type conductivity, and has a thickness d 4 of 1.5 μm or more. aligned, have a direct transition type band structure, the thickness d 5 of 0.4～1.0Myuemu u
An n-AlGaInP active layer 5 is formed.
【００２２】このとき、Ｓｅ−ＡｌＧａＩｎＰクラッド
層４が、発光部５となるＡｌＧａＩｎＰ活性層５からの
発光に対し透明な層４となるようにしている。At this time, the Se—AlGaInP clad layer 4 is made to be a layer 4 that is transparent to light emitted from the AlGaInP active layer 5 serving as the light emitting section 5.
【００２３】なお、発光部５の発光に対し透明な層４の
一部または全部が、ＡｌＧａＩｎＰまたはＡｌＩｎＰで
形成するようにしてもよいし、ＡｌＧａＡｓまたはＡｌ
Ａｓで形成するようにしてもよい。A part or the whole of the layer 4 transparent to the light emission of the light emitting section 5 may be made of AlGaInP or AlInP, or may be made of AlGaAs or AlGaAs.
It may be formed of As.
【００２４】すなわち、発光部の発光に対し透明な層４
は、発光部５から発光した光のＬＥＤ外部への取り出し
効率が上がるように作用するものであれば、いかなるも
のを用いてもよい。That is, the layer 4 that is transparent to the light emitted from the light emitting section
Any material may be used as long as it acts to increase the efficiency of extracting light emitted from the light emitting section 5 to the outside of the LED.
【００２５】また、発光部５は量子井戸構造となるよう
にしている。The light emitting section 5 has a quantum well structure.
【００２６】この後、ＧａＡｓに格子整合し間接遷移型
のバンド構造で、Ｚｎが添加されｐ型の導電性を有する
Ｚｎ−ＡｌＧａＩｎＰクラッド層６を形成し、最後に、
Ｚｎが添加されｐ型の導電性を有し、厚さｄ7 が４〜１
０μｍのＺｎ−ＧａＰウインドウ層７を形成して、本発
明の発光ダイオード１が構成される。Thereafter, a Zn-AlGaInP clad layer 6 which is lattice-matched to GaAs, has an indirect transition type band structure, is doped with Zn, and has p-type conductivity is formed.
Zn is added, has p-type conductivity, and has a thickness d 7 of 4-1.
The light emitting diode 1 of the present invention is formed by forming a Zn-GaP window layer 7 of 0 μm.
【００２７】なお、発光部５の発光に対し透明な層４と
ＧａＡｓ基板２との間に、発光部５の発光波長が最大反
射率となる分布ブラッグ反射膜（ＤＢＲ）を具備するよ
うにするとなおよい。It is to be noted that a distributed Bragg reflection film (DBR) in which the light emission wavelength of the light emitting portion 5 has a maximum reflectance is provided between the GaAs substrate 2 and the transparent layer 4 for light emission of the light emitting portion 5. Better.
【００２８】以上説明してきたように、本発明の発光ダ
イオード１は、上記のようにして得られるＬＥＤエピタ
キシャルウエハであり、このＬＥＤエピタキシャルウエ
ハからＬＥＤチップを作製する。As described above, the light emitting diode 1 of the present invention is an LED epitaxial wafer obtained as described above, and an LED chip is manufactured from this LED epitaxial wafer.
【００２９】チップの大きさは３００μｍ角で、エピタ
キシャルウエハ基板側にあたるチップ下面全体に、Ａｕ
−Ｇｅ−Ｎｉ合金からなる電極を、Ｚｎ−ＧａＰウイン
ドウ層７側にはＡｕ−Ｚｎ−Ｎｉ合金からなる直径１５
０μｍの円形の電極を形成し、このＬＥＤチップをステ
ム上に組み込んで用いる。The size of the chip is 300 μm square, and the entire lower surface of the chip corresponding to the epitaxial wafer substrate side is covered with Au.
An electrode made of a Ge—Ni alloy, and a diameter of 15 mm made of an Au—Zn—Ni alloy on the Zn—GaP window layer 7 side.
A circular electrode of 0 μm is formed, and this LED chip is incorporated on a stem for use.
【００３０】直流電源により本発明の発光ダイオード１
の発光特性を調べた結果、２０ｍＡ通電時の発光出力は
０．８〜１．１ｍＷ、順方向電圧は１．９Ｖであった。The light emitting diode 1 of the present invention is operated by a DC power supply.
As a result of examining the light emission characteristics, the light emission output at the time of applying 20 mA current was 0.8 to 1.1 mW, and the forward voltage was 1.9 V.
【００３１】次に、本発明の発光ダイオード１の作用を
説明する。Next, the operation of the light emitting diode 1 of the present invention will be described.
【００３２】図２は、本発明の発光ダイオード１の発光
部５に対し透明な層４の厚さｄ4 〔μｍ〕を横軸にと
り、発光ダイオード１の発光出力〔ａ．ｕ．〕を縦軸に
とった発光出力測定図を示したものである。FIG. 2 shows the light emitting output [a. Of the light emitting diode 1 of the light emitting diode 1 of the present invention with the thickness d 4 [μm] of the transparent layer 4 taken along the horizontal axis. u. ] On the vertical axis.
【００３３】図２に示されているように、発光部５に対
し透明な層４の厚さｄ4 が厚くなるのに応じて、発光ダ
イオード１の発光出力は増加する。特に、１．５μｍ以
上の厚さになると、急激に発光出力が増加する。As shown in FIG. 2, as the thickness d 4 of the transparent layer 4 with respect to the light emitting section 5 increases, the light emitting output of the light emitting diode 1 increases. In particular, when the thickness becomes 1.5 μm or more, the light emission output sharply increases.
【００３４】半導体結晶中の不純物は結晶の温度が高い
ほど拡散しやすく、ＡｌＧａＩｎＰ中のＳｅと比較して
Ｚｎの拡散速度は数倍〜数十倍程度速く、また拡散量は
加熱時間に概ね比例する。このため、Ｓｅ、Ｚｎを添加
した層を含むＬＥＤでは、発光部近傍へのＺｎの拡散に
より発光出力が低下してしまう原因となっている。Impurities in a semiconductor crystal are more likely to diffuse as the temperature of the crystal is higher, the diffusion rate of Zn is several times to several tens times faster than Se in AlGaInP, and the amount of diffusion is generally proportional to the heating time. I do. For this reason, in an LED including a layer to which Se and Zn are added, the diffusion of Zn in the vicinity of the light emitting portion causes a decrease in the light emission output.
【００３５】本発明においては、Ｓｅが添加された層
は、Ｚｎを含む層よりも先にエピタキシャル成長される
ため長時間成長を行っても発光出力の低下をもたらすこ
とはない。In the present invention, since the layer to which Se is added is epitaxially grown before the layer containing Zn, even if the layer is grown for a long time, the light emission output does not decrease.
【００３６】したがってＳｅ−ＡｌＧａＩｎＰクラッド
層４を１．５μｍ以上厚く成長させることにより、従
来、Ｚｎ−ＧａＰウインドウ層７を厚膜化することで光
取り出し効率を向上させた代わりに、光取り出し効率を
向上させ、しかもＺｎの拡散による発光出力の低下を抑
えることができる。Therefore, by increasing the thickness of the Se—AlGaInP cladding layer 4 by 1.5 μm or more, the light extraction efficiency is improved instead of increasing the thickness of the Zn—GaP window layer 7 conventionally. It is possible to improve the light emission output due to the diffusion of Zn.
【００３７】つまり、本発明による発光ダイオード１
は、ｎ型導電性のＧａＡｓ基板２上に順次エピタキシャ
ル成長され、発光部５がＡｌＧａＩｎＰからなり、発光
部５よりも基板側に位置し、しかも発光部５の発光に対
し透明な層４の層厚を１．５μｍ以上としていること
で、発光部５から発光される光が、ＬＥＤチップ内で反
射されて最終的に吸収されてしまう割合が小さくなる。That is, the light emitting diode 1 according to the present invention
Is a layer thickness of the layer 4 that is sequentially epitaxially grown on an n-type conductive GaAs substrate 2, the light emitting portion 5 is made of AlGaInP, and is located closer to the substrate than the light emitting portion 5, and is transparent to light emission of the light emitting portion 5. Is set to 1.5 μm or more, the ratio of light emitted from the light emitting unit 5 reflected in the LED chip and finally absorbed is reduced.
【００３８】このため、従来ほどウインドウ層７の厚膜
化を行うことなく、光の取り出し効率を上げることがで
き、結果的に、発光出力が高く、しかも、１回のＭＯＶ
ＰＥ成長で、製作が容易で低価格な発光ダイオードが実
現できる。As a result, the light extraction efficiency can be increased without increasing the thickness of the window layer 7 as compared with the related art, and as a result, the light emission output is high and the MOV can be performed once.
By PE growth, a light emitting diode which is easy to manufacture and inexpensive can be realized.
【００３９】発光部５の発光に対し透明な層４は、発光
部５を量子井戸構造としているために、発光部５に注入
された電子及び正孔が発光部５と透明な層４間のエネル
ギー障壁を超えて漏洩しないように、またトンネル電流
により漏洩しないようにするために、通常０．３〜１．
０μｍ程度の膜厚とされているが、透明な層４の膜厚が
１．５μｍ以上になると光取出効率の増加割合が大きく
なる。The layer 4 which is transparent to the light emitted from the light emitting section 5 has a quantum well structure, so that the electrons and holes injected into the light emitting section 5 are filled between the light emitting section 5 and the transparent layer 4. In order not to leak beyond the energy barrier and not to leak due to tunneling current, usually 0.3-1.
Although the thickness is about 0 μm, when the thickness of the transparent layer 4 is 1.5 μm or more, the rate of increase in light extraction efficiency increases.
【００４０】[0040]
【発明の効果】以上説明したことから明らかなように、
本発明によれば次のごとき優れた効果を発揮する。As is apparent from the above description,
According to the present invention, the following excellent effects are exhibited.
【００４１】（１）光取出効率が高い。(1) Light extraction efficiency is high.
【００４２】（２）発光出力が大きい。(2) The light emission output is large.
【００４３】（３）１回のＭＯＶＰＥ成長で、容易に作
製することができる。(3) It can be easily manufactured by one MOVPE growth.
【図１】本発明の好適実施の形態を示す拡大横断面図で
ある。FIG. 1 is an enlarged cross-sectional view showing a preferred embodiment of the present invention.
【図２】図１に示した発光ダイオードの発光部に対し透
明な層の厚さに応じた発光出力測定図である。FIG. 2 is a view showing a light emission output measurement according to a thickness of a layer transparent to a light emitting portion of the light emitting diode shown in FIG.
１ 発光ダイオード ２ ｎ−ＧａＡｓ基板 ３ Ｓｅ−ＧａＡｓバッファ層 ４ Ｓｅ−ＡｌＧａＩｎＰクラッド層 ５ ｕｎ−ＡｌＧａＩｎＰ活性層 ６ Ｚｎ−ＡｌＧａＩｎＰクラッド層 ７ Ｚｎ−ＧａＰウインドウ層 Reference Signs List 1 light emitting diode 2 n-GaAs substrate 3 Se-GaAs buffer layer 4 Se-AlGaInP cladding layer 5 un-AlGaInP active layer 6 Zn-AlGaInP cladding layer 7 Zn-GaP window layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 今野 泰一郎 茨城県土浦市木田余町3550番地 日立電線 株式会社アドバンスリサーチセンタ内 Ｆターム(参考） 5F041 AA04 AA41 CA05 CA34 CA65 CA85 FF01 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Taiichiro Konno 3550 Kida Yomachi, Tsuchiura-shi, Ibaraki F-term in Advanced Research Center, Hitachi Cable, Ltd. F-reference (reference) 5F041 AA04 AA41 CA05 CA34 CA65 CA85 FF01
Claims (5)
属化合物気相成長法によりエピタキシャル成長にてＡｌ
ＧａＩｎＰからなる発光部とその発光部上にウインドウ
層を形成して構成される発光ダイオードにおいて、発光
部の発光に対し透明な層を、厚さ１．５μｍ以上で、か
つ、発光部よりもＧａＡｓ基板側に位置して形成するこ
とを特徴とする発光ダイオード。1. An Al-based GaAs substrate having an n-type conductivity is epitaxially grown on a GaAs substrate by a metalorganic compound vapor deposition method.
In a light emitting diode formed by forming a light emitting portion made of GaInP and a window layer on the light emitting portion, a layer transparent to light emission of the light emitting portion is formed to have a thickness of 1.5 μm or more and to be GaAs than light emitting portion. A light-emitting diode formed on the substrate side.
は全部が、ＡｌＧａＩｎＰまたはＡｌＩｎＰからなる請
求項１記載の発光ダイオード。2. The light emitting diode according to claim 1, wherein a part or all of a layer transparent to light emission of the light emitting unit is made of AlGaInP or AlInP.
は全部が、ＡｌＧａＡｓまたはＡｌＡｓからなる請求項
１または２記載の発光ダイオード。3. The light emitting diode according to claim 1, wherein a part or all of a layer transparent to light emission of the light emitting unit is made of AlGaAs or AlAs.
３いずれかに記載の発光ダイオード。4. The light emitting section has a quantum well structure.
3. The light-emitting diode according to any one of 3.
基板との間に、発光部の発光波長が最大反射率となる分
布ブラッグ反射膜を具備する請求項１〜４いずれかに記
載の発光ダイオード。5. A light-emitting portion comprising a transparent layer and GaAs.
The light emitting diode according to any one of claims 1 to 4, further comprising a distributed Bragg reflection film having a light emission wavelength of a light emitting portion having a maximum reflectance between the substrate and the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28841799A JP2001111105A (en) | 1999-10-08 | 1999-10-08 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28841799A JP2001111105A (en) | 1999-10-08 | 1999-10-08 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001111105A true JP2001111105A (en) | 2001-04-20 |
Family
ID=17729955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28841799A Pending JP2001111105A (en) | 1999-10-08 | 1999-10-08 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001111105A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150664A (en) * | 2003-11-19 | 2005-06-09 | Shin Etsu Handotai Co Ltd | Light-emitting element and its manufacturing method |
| JP2005150645A (en) * | 2003-11-19 | 2005-06-09 | Shin Etsu Handotai Co Ltd | Light-emitting element |
| JP2008227539A (en) * | 2002-07-31 | 2008-09-25 | Shin Etsu Handotai Co Ltd | Method of manufacturing light emitting element |
-
1999
- 1999-10-08 JP JP28841799A patent/JP2001111105A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227539A (en) * | 2002-07-31 | 2008-09-25 | Shin Etsu Handotai Co Ltd | Method of manufacturing light emitting element |
| JP2005150664A (en) * | 2003-11-19 | 2005-06-09 | Shin Etsu Handotai Co Ltd | Light-emitting element and its manufacturing method |
| JP2005150645A (en) * | 2003-11-19 | 2005-06-09 | Shin Etsu Handotai Co Ltd | Light-emitting element |
| JP4569858B2 (en) * | 2003-11-19 | 2010-10-27 | 信越半導体株式会社 | Method for manufacturing light emitting device |
| JP4569859B2 (en) * | 2003-11-19 | 2010-10-27 | 信越半導体株式会社 | Method for manufacturing light emitting device |
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