JP2001102370A - Substrate-treatment method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-treatment apparatus which needs a supply of gas and is equipped with a processing chamber that is lessened in volume, so as to reduce the necessary amount of gas. SOLUTION: A hot plate 22 carries out a heating treatment, while feeding an inert gas, where a groove 42 is provided to a mounting pad 40, and the lower part of a lid 41 can be fitted into the groove 42. The lid 41 is made to descend by two steps by a lid drive device 50. A processing chamber S is formed between the lid 41 and the mounting pad 40 by the first step of the descending motion of the lid 41, and the processing chamber S becomes smaller in volume, when the lower end of the lid 41 is fitted into the groove 42 by the second step of the descending motion of the lid 41.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a substrate processing method and a substrate processing apparatus.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, an interlayer insulating film is formed by a SOD (Spin on Dielectric) system. In this SOD system, a coating film is formed on a semiconductor wafer by a sol-gel method, a silk method, a speed film method, a fox method, and the like, and a chemical treatment or a heat treatment is performed to form an interlayer insulating film. .

In such an SOD system, the sol
When an interlayer insulating film is formed by a gel method, a semiconductor wafer is transferred from a carrier station to a processing unit,
In a coating unit provided in the processing unit, a coating liquid in which a colloid of, for example, TEOS (tetraethoxysilane) is dispersed in an organic solvent is applied to the semiconductor wafer. Thereafter, the semiconductor wafer is transferred to an aging unit and subjected to a gelling process, and then transferred to a solvent exchange unit to replace the solvent. Thereafter, heat treatment is appropriately performed by a hot plate unit. The semiconductor wafer having the completed interlayer insulating film is returned to the carrier station.

In the hot plate unit of this SOD system, after a semiconductor wafer is transferred into a processing chamber and supported by elevating pins, a lid is lowered by a driving mechanism, and a lower end of the lid and an upper surface of a heating plate are heated. Adhere to each other to form a processing chamber having a constant volume. Thereafter, before the heat treatment, a nitrogen gas, which is an inert gas, is supplied to prevent oxidation of the semiconductor wafer, and the processing chamber is replaced with an atmosphere having a low oxygen concentration. Furthermore, nitrogen gas was constantly introduced into the processing chamber and exhausted through an exhaust pipe provided in the lid so that the heat treatment was performed in an atmosphere having a constant low oxygen concentration even during the processing. .

[0005]

However, in the above-mentioned prior art, a large amount of inert gas to be supplied is required constantly, which is not economically preferable. In addition, since the processing may be performed simultaneously in multiple processing chambers, if the amount of inert gas required for one processing unit increases, the entire system including them requires an extremely large amount of gas, which may not be supplied all at once. Comes out. To reduce the volume of the processing chamber, it is conceivable to design the lid to be shallow. However, the semiconductor wafer is heated before the inside of the processing apparatus is replaced with an inert gas, and is separated from the heating plate so as not to be oxidized. Because of the need to keep it, there was a limit to making the lid shallow.

An object of the present invention is to replace the atmosphere in a processing chamber with an inert gas without raising the temperature of a semiconductor wafer, thereby reducing the supply amount of the inert gas while maintaining a low oxygen concentration.

[0007]

According to a first aspect of the present invention, there is provided a mounting table for mounting a substrate, a lid forming a processing chamber together with the mounting table, gas supply means for supplying gas into the processing chamber. A method for processing a substrate on a mounting table using a substrate processing apparatus having an exhaust unit for exhausting an atmosphere in the processing chamber, wherein the lid is lowered with respect to the mounting table. And a step of reducing a volume of the processing chamber.

According to the first aspect of the present invention, the amount of gas supplied into the processing chamber is reduced by lowering the lid in the substrate processing apparatus with respect to the mounting table to reduce the volume of the processing chamber. Can be reduced.

A second aspect of the present invention is a substrate processing method including a step of lowering a mounting table in place of the lid of the first aspect with respect to the lid to reduce the volume of the processing chamber.
The supply amount of gas to be supplied into the processing apparatus can be reduced.

According to a third aspect of the present invention, there is provided a mounting table on which a substrate is mounted, a lid having an opening on a lower surface forming a processing chamber together with the mounting table, gas supply means for supplying gas into the processing chamber, What is claimed is: 1. A substrate mounting apparatus, comprising: an exhaust means for exhausting an atmosphere in a processing chamber, comprising: a driving mechanism for vertically moving the lid and the mounting table relative to each other; Has a shape larger than the lower end of the lid, and the mounting table is provided with a groove into which the lower end of the lid is inserted.

According to the third aspect of the present invention, the lid is lowered by the drive mechanism with respect to the mounting table, or the mounting table is raised with respect to the lid by the driving mechanism. The lower end of the body is inserted into the groove of the mounting table. As a result, the volume of the processing chamber formed by the lid and the mounting table is reduced, and the amount of gas supply necessary to maintain a constant low oxygen concentration can be reduced. Further, since the volume of the processing chamber is reduced, it is easy to keep the gas concentration distribution in the processing chamber constant, and the gas concentration distribution is stabilized, so that the substrate can be uniformly processed.

According to a fourth aspect of the present invention, there is provided a mounting table for mounting a substrate, a lid having an opening on a lower surface forming a processing chamber together with the mounting table, gas supply means for supplying gas into the processing chamber, What is claimed is: 1. A substrate processing apparatus having an exhaust unit for exhausting an atmosphere in a processing chamber, comprising: a drive mechanism for vertically moving the lid and the mounting table relative to each other; Provided is a substrate processing apparatus, wherein the mounting table has a shape larger than the outer circumference.

According to the fourth aspect of the present invention, the lower end of the lid is moved forward with respect to whether the lid is lowered with respect to the mounting table or the mounting table is raised with respect to the lid. Since the mounting table is surrounded, the volume of the processing chamber formed by the lid and the mounting table is reduced, and the supply amount of gas necessary to maintain a constant low oxygen concentration can be reduced. Further, since the processing chamber is narrowed, the gas concentration distribution in the processing chamber is kept constant, and as a result, the substrate can be processed uniformly.

In the invention of claim 3 or 4,
According to a fifth aspect of the present invention, there may be provided an elevating support member capable of supporting the substrate so as to be able to protrude and retract from the upper surface of the mounting table.

As described above, by having the lifting support member, the lid and the mounting table form a processing chamber. For example, the atmosphere in the processing chamber can be reduced while the substrate is supported on the lifting support member. The gas can be replaced by a predetermined gas, and after the replacement, the process of lowering the elevating support member and mounting the substrate on the mounting table can be performed.

According to a sixth aspect of the present invention, there is provided the substrate mounting apparatus according to any one of the third, fourth, and fifth aspects, further comprising a sealing member for hermetically sealing a space between the lid and the mounting table. I do.

According to the present invention, since the sealing member is provided to make the space between the lid and the mounting table airtight, the gas in the processing chamber flows out of the processing chamber other than the gas exhaust means. Can be prevented. Therefore, the supply amount of gas can be reduced correspondingly, and it is easy to keep the gas concentration in the processing chamber constant. Further, since the gas flow is not disturbed, the gas concentration distribution cannot be uneven, so that the substrate can be uniformly processed.

According to a seventh aspect of the present invention, there is provided a stopper member for restricting an approach between the lid and the mounting table, and the seal member comprises:
7. The substrate processing apparatus according to claim 6, wherein the substrate processing apparatus is provided on the stopper member.

According to the seventh aspect of the present invention, when the lid and the mounting table approach each other, the approach of the stopper is restricted by the stopper member. Can be prevented from contacting. Further, since the seal member is provided on the stopper, it is possible to restrict the approach and maintain the airtightness.

According to the eighth aspect of the present invention, there is provided a mounting table for mounting a substrate, a lid forming a processing chamber together with the mounting table,
In a substrate processing method for performing processing on a substrate on a mounting table using a substrate processing apparatus having a gas supply unit for supplying a gas into the processing chamber and an exhaust unit for exhausting an atmosphere in the processing chamber, A substrate processing method is provided, comprising: a step of forming a processing chamber between the mounting table and the lid; and a step of reducing the volume of the formed processing chamber.

As described above, the step of reducing the volume of the processing chamber formed by the lid and the mounting table includes the step of reducing the volume of the gas necessary for maintaining the gas concentration in the processing chamber at a predetermined level. The amount can be reduced.

According to the ninth aspect of the present invention, in the substrate processing apparatus, a mounting table for mounting a substrate, a lid having an opening on a lower surface that forms a processing chamber together with the mounting table, and supplying gas into the processing chamber. Gas supply means, exhaust means for exhausting the atmosphere in the processing chamber, a driving mechanism for moving the lid and the mounting table up and down relatively, and the lid and the mounting table by the driving mechanism. Means for controlling the volume of a processing chamber formed between the mounting table on which the substrate is mounted and the lid by relatively moving the substrate up and down. Is provided.

As described above, the lid and the mounting table relatively move up and down, and the volume of the processing chamber formed by the lid and the mounting table is reduced, so that the processing chamber is kept constant. The supply amount of the gas required to maintain the low oxygen concentration can be reduced. Further, since the volume of the processing chamber is reduced, it is easy to keep the gas concentration distribution in the processing chamber constant, and the gas concentration distribution is stabilized, so that the substrate can be uniformly processed.

According to the ninth aspect of the present invention, in the first aspect,
A seal member for sealing the space between the lid and the mounting table as described above and a cooling mechanism for cooling the seal member may be provided. By providing the seal member in this manner, it is possible to prevent the gas in the processing chamber from flowing out of the processing chamber other than the gas exhaust means. Further, by providing a cooling mechanism for cooling the seal member, the seal member is prevented from being damaged by heat and from losing its function as a seal member.

According to the ninth aspect of the present invention, in the first aspect,
As in 1, a gap may be formed between the mounting table on which the substrate is mounted and the lid. By forming the gap in this manner, for example, the atmosphere in the processing chamber can be exhausted from the gap, and the exhaust of the processing chamber can be suitably performed.

In the eleventh aspect of the present invention, as in the twelfth aspect, an exhaust mechanism for exhausting the processing chamber through the gap may be further provided. As described above, by providing the exhaust mechanism for exhausting the inside of the processing chamber through the gap, the atmosphere in the processing chamber can be positively exhausted from the gap and the gas outside the processing chamber can be prevented from flowing into the processing chamber. . Therefore, the processing chamber is maintained in a predetermined low oxygen atmosphere.

In each of the above-described substrate processing apparatuses, the amount of gas supplied into the processing chamber by the gas supply means is reduced to the volume of the processing chamber. It may further have a means for controlling in response. In this way, by providing a means for controlling the amount of supplied gas in accordance with the volume of the processing chamber, a minimum necessary gas is supplied when the processing chamber is maintained at a predetermined oxygen concentration or less, and excess gas is removed. Supply can be prevented. Therefore, gas consumption can be reduced.

In each of the substrate processing apparatuses according to the third to seventh and ninth to twelfth aspects, as in the fourteenth aspect, a monitoring means for monitoring the oxygen concentration in the processing chamber; Means for controlling the amount of gas supplied into the processing chamber by the gas supply means. As described above, by providing the monitoring means and the means for controlling the supply amount of the gas based on the monitoring result, the oxygen concentration in the processing chamber is monitored, and the gas concentration is measured in accordance with the oxygen concentration measured by the monitor. Can be changed. Therefore, the supply amount of the gas can be more finely controlled, so that the supply of the gas more than the necessary amount can be prevented, and the supply amount of the gas can be reduced as compared with the related art.

In each of the above-described substrate processing apparatuses according to claims 3 to 7, and 9 to 14, the gas supply means supplies the processing chamber into the processing chamber such that the processing chamber has a positive pressure. The apparatus may further include means for controlling the amount of gas and the amount of atmosphere exhausted from the processing chamber by the exhaust means. As described above, by providing the means for controlling the amount of the atmosphere exhausted from the processing chamber so that the processing chamber has a positive pressure, it is possible to prevent gas such as air outside the processing chamber from flowing into the processing chamber. Therefore,
The processing chamber can be maintained in a predetermined low oxygen atmosphere.

In each of the substrate processing apparatuses according to the third to seventh and ninth to fifteenth aspects, the gas supply means is disposed around the processing chamber and temporarily stores the supplied gas. Then, a buffer for distributing the data around the processing chamber may be provided. According to the sixteenth aspect, since the buffer is arranged around the processing chamber, the gas before being supplied into the processing chamber can be preliminarily heated by the heat of the processing chamber. Therefore, even when the gas is supplied into the processing chamber, the temperature inside the processing chamber is prevented from fluctuating due to the temperature of the gas. Further, since the gas can be supplied from the periphery of the processing chamber, the gas spreads to the peripheral part of the processing chamber, and the gas concentration in the processing chamber can be made uniform.

[0031]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a top plan view of an SOD system incorporating the substrate processing apparatus according to the present embodiment, FIG. 2 is a plan view of a lower stage of the SOD system, and FIG. 1 is a side view of the SOD system shown in FIG. 1, and FIG. 4 is a side view of two processing unit groups 16 and 17 mounted in the SOD system shown in FIG.

The SOD system generally has a processing section 1, a side cabinet 2 as a chemical solution section, and a carrier station (CSB) 3.

As shown in FIGS. 1 and 3, the processing section 1 includes a solvent exchange unit (DSE) 11, a coating processing unit (SCT) 12 for high viscosity, Further, as shown in FIGS. 2 and 3, a coating treatment unit (SCT) 13 for low viscosity applied to the sol-gel method and provided with a chemical, etc. It has a built-in chemical chamber 14.

As shown in FIGS. 1 and 2, processing unit groups 16 and 17 each having a plurality of processing units stacked in multiple stages are provided at the center of the processing unit 1. A transfer unit 18 for transferring the wafer W up and down is arranged between the processing unit groups 16 and 17. As shown in FIG. 4, the processing unit group 16 includes a low-temperature hot plate (LHP) 19 and two DCCs in this order from the top.
(Dielectric Cure and Cooling-off) A processing unit 20 and two aging units (DACs) 21 are stacked. In addition, the processing unit group 17 on the right side, in order from the top,
Hot plate (OHP) 22 for high temperature, hot plate (LHP) 23 for low temperature, two cooling plates (CPL) 24, and transfer unit (TRS) 25
And a cooling plate (CPL) 26 are laminated. The transfer section (TRS) 25 can also have a function of a cooling plate.

The side cabinet 2 is provided adjacent to the processing section 1, and a bubbler 27 for supplying a chemical solution to each unit as shown in FIG. A mist and a wrap (TRAP) 28 for separating the mixed flow into gas and liquid and discharging exhaust gas are provided. As shown in FIG. 2, a power supply source 29, a chemical solution chamber 30 for storing a chemical solution such as HMDS and ammonia, and a drain 31 for discharging the waste liquid are provided at the lower stage of the side cabinet 2. I have.

Hereinafter, the configuration of the hot plate (OHP) 22 as the substrate processing apparatus according to the present embodiment will be described in detail.

The hot plate (OHP) 22 is, as shown in FIG. 5 or FIG.
Along with the mounting table 40, a substantially cylindrical lid body 41 having an open lower surface side forming the processing chamber S is provided. Mounting table 4
The outer shape of “0” is larger than the outer shape of the lid 41, and an annular groove 42 is formed in the peripheral portion so that the lower end 41 a of the lid 41 can be inserted. Further, on the bottom surface of the groove 42, a large number of suction holes 42a are provided. The suction device 42b suctions the bottom of the lid 41 through the suction hole 42a. Accordingly, when the lid 41a is lowered to the bottom of the groove 42, the hermeticity in the processing chamber S can be improved.

The mounting table 40 has a built-in heater 43 for heating the wafer W. The heater 43 generates heat when supplied with power from a power supply (not shown) to bring the wafer W on the mounting table 40 to a predetermined temperature. It is designed to be heated. Mounting table 4
At 0, three through holes 45 are formed, and the elevating pins 44 are vertically movable in the through holes 45.
The lifting pin 44 is raised and lowered by a lifting pin driving device 51 and can be stopped at an arbitrary position.

The outer periphery of the through hole 45 and the wafer W
A plurality of outlets 47 are arranged concentrically outside the position where is mounted, so that nitrogen gas or other inert gas supplied from the supply path 46 can be supplied into the processing chamber. I have. The amount of nitrogen gas supplied from the supply path 46 is controlled by a gas supply control unit 46a. The gas supply control means 46a changes the supply amount of the nitrogen gas according to the volume in the processing chamber S, and controls the atmosphere in the processing chamber S so as to have a predetermined oxygen concentration or less. Further, the gas supply control means 46a is configured so that the supply amount of the nitrogen gas can be adjusted so that the atmosphere does not become unnecessarily low in oxygen.

The lid 41 can be freely moved up and down by a lid driving device 50, and can be stopped at an arbitrary position.
An annular stopper 4 is provided on the inner periphery of the side wall of the lid 41.
9 are provided. On the inner peripheral side of the annular groove 42, a groove 48 for a seal member is formed at a position corresponding to the stopper 49, and an O-ring 53 as a seal member is formed.
Is provided.

With the above structure, when the lid 41 is lowered by the lid driving device 50, even after the lower end portion 41a of the lid enters the groove 42, the stopper 49 is kept on the mounting table 40.
When the stopper 49 collides with the surface of the mounting table 40, the stopper 49 and the seal member 53 come into close contact with each other, so that the processing chamber S is kept airtight. Become.

At the center of the upper portion of the lid 41, an exhaust port 54 communicating with an exhaust means (not shown) is formed.
The inside atmosphere is exhausted. In the present embodiment, it is possible to uniformly exhaust the inert gas supplied from the outlet 47 arranged annularly on the outer periphery of the wafer W from the peripheral portion to the central portion along the radial direction. I have.

Next, the operation of the hot plate (OHP) 22 whose main part is constructed as described above will be described with reference to SOD.
A description will be given together with a process of forming an interlayer insulating film performed in the system.

First, the carrier station (CBS) 3
The wafer W taken out from the transfer unit (TRS) 25
, From which it is conveyed to the cooling plates 24 and 26 for which the temperature is controlled by the conveying mechanism 18.
Then, the wafer W is transferred to the low-viscosity coating processing unit (SCT) 13 and the coating liquid is applied to the wafer W. Then, the wafer W to which the coating liquid has been applied is immediately transferred to the aging unit (DAC) 21 and subjected to gelation processing. Then, it is transported to a solvent exchange unit (DSE) 11 for immediate solvent replacement and processed.

Thereafter, the wafer W is transferred to a low-temperature hot plate (LPH) 19 to evaporate the solvent. Then, it is conveyed to a hot plate (OHP) 22 for high temperature in order to evaporate the solvent having a higher boiling point.

Here, a high-temperature hot plate (OHP) 22 which is a substrate processing apparatus according to an embodiment of the present invention.
The function of will be described in detail.

First, the wafer W that has completed the above-described processing steps
The hot plate (OHP) 2 is
2 is transferred. At this time, the lid 41 is moving upward, and the elevating pin 44 is also raised and is waiting at a predetermined position. Then, when the carrier 18 is between the lid 41 and the mounting table 40 and reaches above the mounting table 40, it stops,
As shown in FIG. 8, the wafer W is transferred to the elevating pins 44 which have been waiting in advance there. At this time, triggered by the wafer W being supported on the elevating pins 44, the nitrogen gas is supplied into the processing chamber S from the ejection port 47 via the supply path 46. Thereafter, as shown in FIG. 9, the lid 41 is lowered by the lid driving device 50, the lower end of the lid 41 reaches the surface of the mounting table 40, and the processing chamber S is formed between the lid 41 and the mounting table 40. By the way, stop temporarily. Here, the atmosphere of the processing chamber S is replaced by the continuously supplied nitrogen gas until the oxygen concentration in the processing chamber S becomes equal to or lower than a predetermined numerical value. After the replacement, the gas supply is reduced and supplied. Note that the supplied nitrogen gas is exhausted from an exhaust passage 54 provided in the lid 41.

Next, as shown in FIG. 10, the lid 41 once stopped for a predetermined time is lowered again by the lid driving device 50, and the stopper 49 of the lid 41 is moved to the mounting table 40.
It stops when it comes in contact with. At this time, as described above,
The elevating pin 44 descends in synchronization with the lid 41, and the elevating pin 4
The wafer W supported by 4 is also lowered, and is mounted on the mounting table 40. Thereafter, the wafer W is heated by the mounting table 40 which has been heated to a predetermined temperature in advance.

Next, when the heating is completed, the lid 41 and the elevating pins 44 are raised again, and the elevating pins 44 stop at a position where the wafer W can be transferred to the carrier 18. After that, when the wafer W is delivered to the carrier 18, the process waits as it is and waits for the delivery of the wafer W to be processed next.

As described above, the hot plate (OHP) 22, which is the substrate processing apparatus according to the present invention, has the lower end portion 41a of the lid entering the mounting table 40 during processing.
The volume of the processing chamber S can be reduced. as a result,
The amount of nitrogen gas supplied to suppress the oxygen concentration in the processing chamber to a predetermined value or less can be reduced as compared with the conventional case. In addition, since the volume of the processing chamber is reduced during the heat treatment, the bias of the oxygen concentration distribution in the processing chamber S is reduced, and the wafer W can be uniformly processed.

After the above heat treatment is completed, the wafer W
Is returned to the carrier station (CSB) 3 to form a predetermined series of interlayer insulating films.

In the above-described embodiment, the lid 41 is lowered to reduce the volume of the processing chamber S. Alternatively, a drive device for vertically moving the mounting table 40 may be attached to the mounting table 40. Then, the mounting table 40 is raised and the processing chamber S
May be reduced. In this case, after the lid 41 forms the processing chamber S together with the mounting table 40 and the atmosphere in the processing chamber S is replaced with nitrogen gas, the lid 41 does not need to be lowered again. Is lowered, and the wafer W is mounted on the mounting table 40. Thereafter, the drive unit mounted on the mounting table 40 moves upward to reduce the volume of the processing chamber.

Next, as a second embodiment, a hot plate of a type in which the outer shape of the lid is formed to be larger than the outer shape of the mounting table, and when the lid is lowered, surrounds the mounting table ( OHP) 60 will be described.

As shown in FIG. 11, a hot plate (O
The HP) 60 is formed such that the inner periphery of the lid 62 is larger than the outer periphery of the mounting table 61. A stopper 49 is provided in the cover 62 in a ring shape similarly to the cover 22 of the first embodiment, and a groove 63 for a seal member is dug in a lower surface of the stopper 49 in a ring shape. I have. Other configurations of the exhaust pipe 54 of the lid 62, the lid driving device 50, the gas supply port 46 of the mounting table 40, the elevating pins 44, and the like are the same as those of the hot plate (OHP) 22 of the first embodiment. It is.

In the same manner as in the first embodiment described above, when the wafer W is supported by the elevating pins 44 and the supply of nitrogen gas is started, the lid 62 is lowered by the lid driving device 50 and the lid 62 is lowered. The lower end of the body 62 reaches the surface of the mounting table, and stops when the processing chamber S is formed between the body 62 and the mounting table 61.
In this state, the supply of the nitrogen gas is continued, and the supply amount of the supply gas is reduced when the atmosphere in the processing chamber S decreases to a predetermined oxygen concentration. Thereafter, the lid 62 starts to lower again, and in synchronization with that, the wafer W also lowers. The wafer W is placed on the mounting table 6
1 and the stopper 49 of the lid 62 is
The descent stops when it stops at. At this time, the mounting table 61
And the O-ring 53 are in close contact with each other, so that the processing chamber S is airtight.

After that, the wafer W is heated by the heater 43 built in the mounting table 61 and subjected to a heating process. When the heating process is completed, the lid 62 and the wafer W are lifted and delivered to the carrier 18 in the same manner as in the first embodiment described above.

According to the second embodiment, the lid 62
Since the volume of the processing chamber can be reduced by lowering the nitrogen gas supply amount, the supply amount of the nitrogen gas is reduced, and the processing is performed at low cost. In addition, the reduction in the volume of the processing chamber stabilizes the flow of the nitrogen gas and makes the oxygen concentration distribution in the processing chamber S constant, so that the wafer W can be uniformly processed.

In the hot plate 60 described above, the lid 62
Lowers to reduce the volume of the processing chamber S.
May be raised to decrease the volume of the processing chamber S. In this case, since the mounting table 61 is raised, the function of a drive mechanism for lowering the lid 62 and the elevating pins 44 in synchronization with each other may not be provided.

Next, still another embodiment of the present invention will be described. FIG. 12 is a sectional view showing a configuration of the hot plate according to the present embodiment. As shown in FIG. 12, in the hot plate 71, a plurality of, for example, 36 or 72 jet ports 72 for supplying nitrogen gas into the processing chamber S are provided along the inner peripheral portion 74 of the lid 73. ing. In the center of the upper part of the lid 73, a shower-like exhaust port 75 communicating with an exhaust means (not shown) is provided. By providing the ejection port 72 and the exhaust port 75 having such a configuration, the flow of the airflow in the processing chamber S becomes uniform, and the temperature distribution in the processing chamber S becomes uniform.

The processing chamber S is provided inside the side wall of the lid 73.
A buffer 76 for temporarily accumulating the nitrogen gas ejected from the ejection port 72 and distributing it around the processing chamber S is provided so as to surround the periphery of the processing chamber S. A guide member 77 is provided in the buffer 76 for circumventing the nitrogen gas in a meandering flow, and the nitrogen gas supplied in the buffer 76 flows in a meandering manner in the buffer 76 along a passage. The gas is ejected from the ejection port 72 provided on the inner peripheral portion 74 of the lid 73. Thus, the nitrogen gas can be uniformly supplied from the periphery of the processing chamber S into the processing chamber S, and the nitrogen gas can be preheated uniformly by using the heat of the processing chamber S.

An O-ring 79 for maintaining the hermeticity of the processing chamber S is disposed at a contact portion of the outer periphery of the lid 73 with the mounting table 78. On the other hand, the O-ring 7 of the mounting table 78
A cooling mechanism 80 for cooling the O-ring 79 is provided at a position where the cooling mechanism 80 contacts the O-ring 79. This cooling mechanism 80
For example, it can be configured by piping a cooling pipe through which cooling water circulates.

Note that, instead of sealing the contact portion between the lid 73 and the mounting table 78 as described above, as shown in FIG.
A gap 81 may be provided between the mounting table 78 and the lid 73. By controlling the supply and exhaust of the nitrogen gas to make the processing chamber S a positive pressure, it is possible to prevent air from entering the processing chamber S. In that case, the gap 81
By providing the exhaust mechanism 82 for exhausting the inside of the processing chamber S through the, the air can be more effectively prevented from entering the processing chamber S.

In the above embodiment, the supply amount of nitrogen gas is controlled according to the volume of the processing chamber S. However, as shown in FIG. May be provided, and the control unit 86 may control the amount of gas supplied into the processing chamber S according to the monitored oxygen concentration. This makes it possible to more finely control the supply amount of the nitrogen gas.

As shown in FIG. 15, hot plates (OHP) may be arranged in multiple stages in a box 91 having a closed structure. The box 91 in FIG. 15 is provided with a gas supply port 92 for supplying an inert gas, for example, nitrogen gas, and an exhaust port 93 for exhausting the atmosphere in the box 91. An oxygen state, for example, a nitrogen gas atmosphere can be set. With this configuration, each hot plate (OH
The oxidation of the wafer W in the processing chamber S of P) can be more effectively prevented.

The hot plate (OHP) housed in the box 91 may be the substrate processing apparatus 22 according to the present embodiment, in which the volume of the processing chamber S can be changed, or a part thereof may be changed. The substrate processing apparatus 22 according to the present embodiment is used, and another part is, for example, a low-temperature hot plate (L).
(HP) 19, the processing chamber may have a constant volume. In either case, box 9
A partition may be provided for each stage in 1 and the surroundings of the OHP and LHP may be in an inert gas atmosphere. Further, without providing such a partition, a nozzle for discharging an inert gas is provided around each processing device (OHP or LHP) for each stage, and the periphery of the processing device at each stage is blown out from the nozzle. An inert gas atmosphere may be used.

Although the substrate processing apparatus described above is related to a high-temperature hot plate (OHP) in an SOD system, a substrate processing apparatus requiring a gas supply in an SOD system, or a developing and coating apparatus for performing lithography processing. The present invention can be applied to a substrate processing apparatus that requires gas supply in a processing system. Also, the present invention can be applied not only to a disc-shaped substrate such as a wafer but also to a rectangular substrate such as an LCD substrate.

[0068]

According to the present invention, the substrate can be processed by reducing the volume of the processing chamber. Therefore, the supply amount of gas can be reduced, so that the cost of gas can be reduced. In addition, since the amount of gas required for one processing apparatus is small, it is possible to supply gas to more processing apparatuses in the system at the same time. In addition, since the gas flow is stable and the atmosphere in the processing chamber has no unevenness, the substrate is uniformly processed, and the yield is improved.

According to the fifth aspect of the present invention, after the atmosphere in the processing chamber is sufficiently replaced with the inert gas, the substrate can be mounted on the mounting table by the lifting support member. Therefore, the processing of the substrate is started only after the inert atmosphere is reached, and the yield does not increase because the substrate does not react excessively.

According to the sixth aspect of the present invention, since the sealing member is provided between the lid and the mounting table, gas does not leak from the contact portion between the lid and the mounting table. Gas flow is kept undisturbed. As a result, the substrate is uniformly processed in a stable atmosphere, and the yield is improved.

In the seventh aspect, the stopper member is provided on the lid, so that the lower end of the lid and the groove bottom of the mounting table or the lid and the substrate are prevented from colliding with each other. Also,
Since the stopper member is provided with the sealing member, when the stopper member comes into contact with the mounting table, the sealing member also comes into contact with the mounting table and the processing chamber becomes airtight, so that the gas flow in the processing chamber is disturbed. Kept without. As a result, the substrate is uniformly processed in a stable atmosphere, and the yield is improved.

According to the fourteenth aspect, since the oxygen concentration in the processing chamber is monitored and the gas supply amount is controlled in accordance with the monitored oxygen concentration, the gas supply amount can be more finely adjusted. The processing chamber can be maintained at a low oxygen concentration with a minimum necessary amount of gas. Therefore,
Gas consumption is reduced, and costs are reduced.

According to the fifteenth aspect, since the processing chamber can be maintained at a positive pressure, the inflow of oxygen and the like from outside the processing chamber can be suppressed, and the processing chamber can be maintained in a low oxygen atmosphere more effectively. .

[Brief description of the drawings]

FIG. 1 is a plan view of an upper stage of an SOD system according to an embodiment of the present invention.

FIG. 2 is a plan view of a lower stage of the SOD system according to the embodiment of the present invention.

FIG. 3 is a side view of the SOD system shown in FIG.

FIG. 4 is a perspective view of the SOD system shown in FIG.
FIG. 4 is a side view illustrating two processing unit groups formed by stacking a plurality of processing units in multiple stages.

FIG. 5 is an explanatory view of a vertical section of a high-temperature hot plate which is the substrate processing apparatus according to the first embodiment.

FIG. 6 is a plan view of a mounting table provided on the hot plate of FIG. 5;

FIG. 7 is an enlarged view around a seal member provided on the hot plate of FIG. 5;

FIG. 8 is a view showing a state in which a substrate is supported by elevating pins of the hot plate of FIG. 5;

FIG. 9 is a view showing a state where a processing chamber is formed by a lid and a mounting table of the hot plate of FIG. 5;

FIG. 10 is a state diagram when the lid of the hot plate of FIG. 5 is closed and the substrate is mounted on the mounting table.

FIG. 11 is an explanatory view of a vertical section of a hot plate which is a substrate processing apparatus according to a second embodiment.

FIG. 12 is an explanatory view of a vertical section of a hot plate according to another embodiment of the present invention.

FIG. 13 is an enlarged view of a gap portion when a gap is provided between the mounting table and the lid.

FIG. 14 is an explanatory view of a longitudinal section of a hot plate according to still another embodiment of the present invention.

FIG. 15 is an explanatory view of a vertical section of a box in which a plurality of hot plates are stored.

[Explanation of symbols]

 Reference Signs List 1 processing unit 2 side cabinet 3 carrier station 22 hot plate 40, 61 mounting table 41, 62 lid 41a lid lower end part 42 groove 44 elevating pin 47 spout 49 stopper 50 lid driving device 51 elevating pin driving device W wafer S Processing room

Claims (16)

[Claims] 1. A mounting table on which a substrate is mounted, a lid forming a processing chamber together with the mounting table, gas supply means for supplying gas into the processing chamber, and a gas supply means for exhausting an atmosphere in the processing chamber. A method for performing processing on a substrate on a mounting table using a substrate processing apparatus having an exhaust unit, wherein the step of lowering the lid with respect to the mounting table to reduce the volume of the processing chamber. A substrate processing method, comprising: 2. A mounting table for mounting a substrate, a lid forming a processing chamber together with the mounting table, gas supply means for supplying a gas into the processing chamber, and a gas supply means for exhausting an atmosphere in the processing chamber. A method for performing processing on a substrate of a mounting table using a substrate processing apparatus having an exhaust unit, the method including a step of lowering the volume of the processing chamber by raising the mounting table with respect to a lid. A method of processing a substrate, comprising: 3. A mounting table on which a substrate is mounted, a lid that forms a processing chamber together with the mounting table and has an open lower surface, gas supply means for supplying gas into the processing chamber, and an atmosphere in the processing chamber. What is claimed is: 1. A substrate processing apparatus comprising: an exhaust means for exhausting, comprising a driving mechanism for vertically moving said lid and said mounting table relative to each other; A substrate processing apparatus, wherein the mounting table has a shape larger than a part, and the mounting table is formed with a groove into which a lower end of the lid is inserted. 4. A mounting table on which a substrate is mounted, a lid that forms a processing chamber together with the mounting table and has an open lower surface, gas supply means for supplying gas into the processing chamber, and an atmosphere in the processing chamber. A substrate processing apparatus having exhaust means for exhausting, comprising: a driving mechanism for vertically moving the lid and the mounting table relative to each other, wherein the inner periphery of the lid is more than the outer periphery of the mounting table. A substrate processing apparatus characterized by having a large size. 5. The substrate processing apparatus according to claim 3, further comprising an elevating support member capable of supporting the substrate so as to be able to protrude and retract from the upper surface of the mounting table. 6. The substrate processing apparatus according to claim 3, further comprising a sealing member for hermetically sealing a space between the lid and the mounting table. 7. The substrate processing apparatus according to claim 6, further comprising a stopper member for restricting an approach between the lid and the mounting table, wherein the seal member is provided on the stopper member. . 8. A mounting table for mounting a substrate, a lid forming a processing chamber together with the mounting table, gas supply means for supplying gas into the processing chamber, and a gas supply means for exhausting an atmosphere in the processing chamber. In a substrate processing method for performing processing on a substrate on a mounting table using a substrate processing apparatus having an exhaust unit,
A substrate processing method, comprising: forming a processing chamber between the mounting table and the lid; and reducing the volume of the formed processing chamber. 9. A substrate processing apparatus, comprising: a mounting table on which a substrate is mounted; a lid having an open lower surface forming a processing chamber together with the mounting table; gas supply means for supplying gas into the processing chamber; Exhaust means for exhausting the atmosphere in the processing chamber, a driving mechanism for moving the lid and the mounting table relatively up and down, and moving the lid and the mounting table relatively up and down by the driving mechanism Means for controlling a volume of a processing chamber formed between the mounting table on which the substrate is mounted and the lid. 10. The substrate processing apparatus according to claim 9, further comprising: a sealing member for hermetically sealing a space between the lid and the mounting table; and a cooling mechanism for cooling the sealing member. 11. The substrate processing apparatus according to claim 9, wherein a gap is formed between the mounting table on which the substrate is mounted and the lid. 12. The apparatus according to claim 1, further comprising an exhaust mechanism for exhausting the inside of the processing chamber through the gap.
2. The substrate processing apparatus according to 1. 13. The apparatus according to claim 3, further comprising means for controlling an amount of gas supplied into said processing chamber by said gas supply means in accordance with a volume of said processing chamber.
The substrate processing apparatus according to any one of 4, 5, 6, 7, 9, 10, 11, and 12. 14. A monitoring unit for monitoring an oxygen concentration in the processing chamber, and a unit for controlling an amount of gas supplied into the processing chamber by the gas supply unit according to the monitored oxygen concentration. Characterized by:
The substrate processing apparatus according to claim 3, 4, 5, 6, 7, 7, 9, 10, 11, or 12. 15. A means for controlling the amount of gas supplied into the processing chamber by the gas supply means and the amount of atmosphere exhausted from the processing chamber by the exhaust means so that the processing chamber has a positive pressure. 3. The method according to claim 3, further comprising:
15. The substrate processing apparatus according to any one of 2, 13, and 14. 16. The gas supply means according to claim 3, further comprising a buffer disposed around the processing chamber, for temporarily storing the gas to be supplied and distributing the gas around the processing chamber. , 4,5,6,7,9,10,1
The substrate processing apparatus according to any one of 1, 12, 13, 14 and 15.