JP2001101617A - Thin film magnetic head, its manufacturing method and magnetic disk device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film magnetic head capable of ensuring precise dimensions of an upper writing pole by properly selecting the material of a conductive substrate film of plating and a contact film. SOLUTION: This manufacturing method of a thin film magnetic head comprises a stage (1) of forming the contact film 2 having tight adhesiveness to the conductive substrate film of plating and a photoresist on the conductive substrate film 1 of plating, a stage (2) of forming a photoresist frame 3 on the contact film, a stage (3) of removing the contact film corresponding to a part on which a plating film is formed, a stage (4) of forming the plating film 6 on the part after removing the contact film, a stage (5) of removing the resist frame and a stage (6) of, thereafter, removing the unnecessary contact film, the unnecessary conductive substrate film of plating and the unnecessary plated film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film magnetic head, and more particularly, to at least one of an upper write pole, a lower shield, an upper shield, a coil, an electrode terminal, and the like. The present invention relates to a method of manufacturing a thin film magnetic head in which two portions are formed by plating. The present invention also relates to a thin-film magnetic head manufactured by the method for manufacturing a thin-film magnetic head. Further, the present invention relates to a magnetic disk drive using the thin-film magnetic head.

[0002]

2. Description of the Related Art The capacity and size of magnetic disk drives are rapidly increasing year by year, and it is essential to develop a technology for increasing the recording density. In response to the increase in recording density, development of a recording / reproducing separation type head using a reproducing head as an MR element or a GMR element and using a recording head as an inductive element is progressing.

Accordingly, regarding the recording head element,
Improvements in recording / reproducing output, narrowing of the track width of the upper write port, and higher precision are required.

Conventionally, a permalloy material has been used for the upper write pole.
Conversion to FeNi-based materials or CoNiFe-based materials having a higher saturation magnetic flux density than that of Malloy was required. Here, since the upper write port is formed by electroplating, it has been found that the use of a material having a high saturation magnetic flux density for the plating conductive underlayer also has an effect on the recording / reproducing characteristics. Was. The plating conductive base film functions as a cathode during electroplating and forms a part of a magnetic pole.

[0005] However, when a material having a high saturation magnetic flux density is selected for the plating conductive underlayer, the resist frame pattern is peeled off during the pretreatment of the plating or during the deposition of the plating, resulting in an abnormal plating shape. This phenomenon is due to the permalloy (typically 80NiF
e) As a result, the adhesion between the resist frame forming the plating pattern and the plating conductive underlying film is lower than that of the underlying film. In order to prevent this phenomenon and stabilize the plating shape, application of a conventional permalloy material as a plating conductive underlayer was studied. However, when a permalloy underlayer is used, the upper write port is lower than the upper write port.
It has been found that the saturation magnetic flux density is reduced near the gap between the gaps, so that there is a problem that the gap width is increased magnetically and the recording performance is reduced.

On the other hand, in order to narrow the track width and increase the precision of the upper write pole, the precision of the formation of the resist frame for forming the plating pattern cannot meet the required precision of the track width. Is coming. Track width 2μ
m or less, and the thickness of the pole is 3 to 5 μm, the thickness of the resist frame at the zero-throat level (the end of the insulating film surrounding the coil on the gap side) is the thickness of the resist on the coil and the insulating film. In order to ensure a thickness of not less than the plating film thickness, 10 to 15 μm is required from the throwing power of the applied resist (film thickness distribution), and the aspect ratio (resist film thickness / track width) of the resist frame at the zero slot level is 5 or more. Becomes

That is, since the resist film thickness at the zero throat level is a sloped section in which the thickness of the insulating film changes greatly, the film thickness is larger than that of the flat portion of the insulating film in the portion corresponding to the coil. Is done. Therefore, the ratio of the resist film thickness to the track width becomes large at the zero throat level. To give a specific example, the resist film thickness is usually 6 μm to form a plating film thickness of 3 to 5 μm to be a write pole.
A thickness of about m is required, but if this relationship is satisfied in the flat portion above the coil, the resist film thickness is 10 to 15 μm at the zero throat level, and the aspect ratio is too large. . This is approaching the limit of the conventional photolithography technology, and the development of high-precision photolithography and plating technology is required.

In the thin-film magnetic head, regardless of the upper write port, when the lower shield, upper shield, coil, electrode terminal, and the like are formed by plating, the plating conductive base film is formed by sputtering. Has formed. For the plating film to be formed, sufficient adhesion is required between the plating conductive base film and the plating film to be grown thereon. In some cases, problems such as formation of an oxide film on the surface or corrosion may occur.

FIG. 3 illustrates a problem with the prior art. FIG. 4A shows an example in which plating is deposited from the redeposition film on the side of the resist frame, and FIG. 4B shows a case where the resist frame in FIG. 4A is removed. It shows a plating shape. FIG. 5 is a cross-sectional view of the tip of the thin-film magnetic head.

Since the upper write port 10 is formed from the gap GAP 11 to the insulating film 13 including the coil 12 as shown in FIG. 5, the resist film thickness on the insulating film 13 is more than the plating film thickness. When the track width is 1 .mu.m and the pole film thickness is 5 .mu.m, the thickness of the resist frame at the zero throat level becomes as large as 10 to 15 .mu.m due to the spread of the applied resist. Therefore, the aspect ratio of the resist frame at the zero slot level is 5 or more. It is required to increase the track width for such dimensional specifications.

In the general prior art, both the write pole and the plating underlayer are made of permalloy (typically 80N).
iFe), but from the viewpoint of writing characteristics, 80NiFe
Since the influence of 46NiFe on the write characteristics is larger because the Fe component is larger and the base film is closer to the gap, the idea of using 46NiFe for the pole and the base film instead of 80NiFe has been considered. Proposed.

However, in this technique, as shown in FIG. 3, the plating conductive base film 1 is formed as a NiFe film having an Fe content of 30 wt% or more, for example, 46NiFe (46NiFe).
When the (-54Fe) material is used, there is a problem that the adhesion to the resist frame 3 is relatively weak. For example,
The acid solution of the plating pretreatment may seep into the lower part of the resist frame (see reference numeral 8 in FIG. 3), or the plating pattern stress during plating or abnormal frame pattern shape due to the force applied from hydrogen gas generated during plating deposition. Caused a problem. As a result, the plating shape becomes different from the initially intended shape, so that the plating shape becomes abnormal, and it is difficult to produce a highly accurate upper write pole.

[0013]

SUMMARY OF THE INVENTION An object of the present invention is to select a material composition of a plating base film suitable for manufacturing by using an electroplating method, and to control an upper writing port having a strictly controlled width, thickness and material. An object of the present invention is to provide a method of manufacturing a thin-film magnetic head including a shield, a lower shield, an upper shield, a coil, and an electrode terminal.

Another object of the present invention is to realize a thin-film magnetic head manufactured by the method for manufacturing a thin-film magnetic head and a high-performance magnetic disk drive using the thin-film magnetic head.

[0015]

In order to solve the above problems, the present invention mainly employs the following configuration.

A step of forming an adhesion film having good adhesion to the plating conduction base film and the photoresist on the surface of the plating conduction base film; a step of forming a photoresist frame on the adhesion film; Removing the adhesion film corresponding to the part where the adhesion film is formed, forming a plating film on the part where the adhesion film is removed, removing the photoresist frame, and removing the unnecessary adhesion film and unnecessary plating conduction. Removing a base film and an unnecessary plating film.

A step of forming an adhesion film having good adhesion to the plating conduction base film and the photoresist on the surface of the plating conduction base film; and a step of forming a photoresist frame on the adhesion film. A step of removing a footing portion formed under the photoresist frame by dry etching or ion milling, and removing the adhesion film corresponding to a portion where a plating film is to be formed; A step of removing a re-adhesion film formed by the adhesion film that has been removed by milling and adhered to the side surface of the resist frame; a step of forming a plating film on a portion where the adhesion film and the re-adhesion film have been removed; After removing the frame, the unnecessary adhesion film, unnecessary plating conductive base film and unnecessary plating film are removed. Method of manufacturing a thin film magnetic head having a that step.

In the method for manufacturing a thin film magnetic head, the plating conductive base film may have an Fe content of 30 watts.
A method of manufacturing a thin-film magnetic head using an FeNi alloy of at least t% and using an FeNi alloy having an Fe content of 10 to 30 wt% as the adhesion film.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a thin film magnetic head according to an embodiment of the present invention will be described below with reference to FIG. FIG. 1 shows O for removing the tailing of the resist frame.
It is a figure which shows the plating formation process without ₂ RIE processing.

The basic idea in the embodiment of the present invention is that the material of both the plating base film and the plating film is changed to the conventional 80%.
From NiFe, 46NiF from the viewpoint of improving writing characteristics
The purpose of the present invention is to provide a devised remedy in order to solve the problem that occurs when changing to e.

FIG. 1 shows a series of plating processes in forming the upper write port 10, and as shown in FIG. 1A, the plating conductive base film 1 is made of 46NiFe having the same film composition as the upper write port 10. It is formed by a 0.1 μm sputtering method.

Further, permalloy of the adhesion layer 2 is continuously formed as a protective film on the surface thereof by a sputtering method of 2 to 5 nm. The permalloy adhesion layer has good adhesion to the resist frame and the underlying film, and this formation process is one of the features of the present embodiment. It is desirable that the adhesive film be thin in order to be removed in a later step. However, the thickness is not limited to 2 to 5 nm and may be thicker. Here, permalloy is a FeNi alloy having an Fe content of 10 to 30 wt%, and desirably, an Fe alloy having an Fe content of about 20 wt%.
It is a Ni alloy (80Ni-20Fe alloy).

Subsequently, as shown in FIG. 1B, a photoresist frame 3 is formed, and a track width dimension is defined. Next, as shown in FIG. 1 (3), the permalloy adhesion layer 2 on the plating conductive base film in the portion not covered with the photoresist frame is wet-etched by acid cleaning in the pre-plating process or reactive ion etching. It is removed by dry etching by ion milling. That is, the acid cleaning is a pretreatment for plating, and has a function of removing the natural oxide film and also removing the adhesion layer.

Next, as shown in FIG. 1D, plating films 6 and 7 are formed by electroplating on a portion of the plating conductive base film where the adhesion layer of Permalloy has been removed. At this time, since the adhesion layer 2 remains under the photoresist frame 3, the adhesion layer prevents the plating solution from seeping into the interface between the plating base film 1 and the photoresist frame 3 during plating. Thus, the defective shape of the plating film below the photoresist frame 3 can be prevented. It was confirmed this time that the plating solution soaked into 46NiFe as shown in FIG. 3, but did not soak into 80NiFe.

Next, as shown in FIG. 1 (5), after the photoresist frame is removed, an adhesion film of an unnecessary portion, a plating conductive base film of the unnecessary portion, and a plating conductive base film are removed by an ion milling method or a wet etching method. Unnecessary portions of the plating film are removed, and FIG.
As shown in (6), a predetermined upper write port (46N
iFi base film and plating film).

By forming the adhesion layer as a protective film on the plating conductive underlayer in this manner, the plating film has poor shape caused by seepage of the plating solution into the interface between the plating conductive underlayer and the photoresist frame. Can be prevented.

As the plating conductive base film, an adhesion film can be formed below the plating conductive base film in order to prevent the plating conductive base film from peeling off from the interface on the substrate side. As the adhesion film, a metal film that is in close contact with both the plating conductive base film and the lower surface on the substrate side can be used.
A metal film of i, Ta, Cr, NiCr or the like is used.
However, in this embodiment, the adhesion layer below the plating conductive base film is not shown.

Next, another embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. FIG. 2 is a diagram showing a plating forming process with O ₂ RIE processing for removing the tailing of the resist frame. When the track width of the thin-film magnetic head is to be reduced, footing occurs at the bottom of the photoresist frame (see reference numeral 4 in FIG. 2) due to optical properties or photoresist properties, and the track width accuracy is reduced. May deteriorate. Therefore, a method of forming a high-accuracy track width in the case where a footing occurs at the bottom of the photoresist frame will be described.

First, as shown in FIG. 2A, the plating conductive base film 1 is made of 46N having the same film composition as that of the upper write port 10.
An iFe material is formed by a 0.1 μm sputtering method, and permalloy is formed on its surface as an adhesion layer 2 by 2 to 5 nm.
It is formed continuously by a sputtering method.

Subsequently, as shown in FIG. 2B, when the resist frame 3 is formed, the lower portion of the resist frame is skirted due to a high aspect ratio at the zero slot level of the upper write port 10. Becomes In other words, if the distance between the resist frames, that is, the track width is small, the footing becomes a problem in defining the track width dimension (the footing can occur at the time of forming the resist frame. Will not be seen). Therefore, after the formation of the resist frame 3, dry etching such as reactive ion etching (RIE) or ion milling is performed to remove a footing portion and define a track width dimension. By using oxygen or a gas having a composition in which oxygen is mixed with an inert gas, such as argon, the thinned photoresist can be removed.

However, the O ₂ RIE (O ₂ Re)
As shown in FIG. 2 (3), the adhesive layer 2 is formed by active ion etching: a process of removing the footing of the resist frame shown in FIG. 2) or an ion milling process.
There is a problem that the metal is scraped and re-adhered to the side face of the resist frame. Resist deflection of the insulating film slope portion the shape of the insulating film 13 - thickest redeposited film 5 of arm side, by O ₂ RIE or ion milling, and plating pretreatment conditions,
In some cases, the redeposition film cannot be completely removed. If the redeposition film cannot be removed, this film is a conductor film, and as shown in FIG. 4A, plating is deposited from the redeposition film 5 during plating, resulting in an abnormal plating shape. As an example of this shape abnormality, FIG. 4 (2) shows the result of removing the resist frame 3 of FIG. 4 (1), and shows a defective plating shape.

Therefore, when performing O ₂ RIE or ion milling treatment, it is necessary to increase the resistance value of the redeposition layer to improve the process stability. No plating growth occurs), and 46N of the plating conductive base film 1 as the adhesion layer 2
Materials Cr and T having higher sheet resistance than the iFe material
It is better to use i, Ta, NiCr, Si, Al ₂ O ₃ or the like.

Further, depending on the conditions of O ₂ RIE or ion milling, the adhesion layer 2 may be left in a thickness of 2 to 3 nm at a portion of the plating conductive base film where the plating is deposited, as shown in FIG. Then, by performing acid cleaning as a pre-plating treatment, the oxide film on the surface of the base film for plating and the redeposition film 5 on the side surface of the resist frame are removed at the same time as 2-3 nm.
The remaining adhesion layer 2 can be completely removed.

Even if the adhesion layer 2 remains, if a permalloy film is adopted as a protective film, the permalloy film thickness is as thin as 2 to 3 nm or less. Since the magnetic heads are magnetically connected, there is no problem as a magnetic head. Therefore, in this case, a good point is to use a magnetic film such as permalloy as the protective film.

A pre-plating process is performed, and the plated product is shown in FIG. 2 (5).
FIG. 2 (6) shows the result of the removal.

Finally, the underlying plating film 1 and the adhesion layer 2 under the resist frame and the unnecessary plating portion 7 are removed by ion milling or wet etching to form a predetermined upper write port 10 as shown in FIG. It is shown in 7).

As described above, by forming the adhesion layer on the plating conductive base film, the adhesion between the resist frame and the plating conductive base film is improved, and a thin film magnetic head having a track width of 2 μm or less is provided. be able to.

In the embodiment described above, a FeNi alloy having a high saturation magnetic flux density and an Fe composition of 30 wt% or more has been described as a material of the magnetic film used for the upper write pole. There is no problem even with a magnetic film of

For example, a CoNiFe film is known as a magnetic material having a high saturation magnetic flux density like the FeNi alloy. If the CoNiFe composition is selected, the magnetostriction constant is set to 0.
It is known that it can be controlled near. When a CoNiFe film is used as the magnetic material of the upper write pole, it is desirable to use a CoNiFe film as the plating conductive base film.

Therefore, CoNi is used as a plating conductive underlayer.
Using the Fe film, a CoNiFe film was plated using the photoresist frame pattern as a mask in the same manner as in the above embodiment. However, as in the above-described embodiment, the plating solution soaked into the lower part of the photoresist frame, resulting in an abnormal shape due to the soaking of the plating film. In order to prevent this, a permalloy, which is a magnetic film, is formed as an adhesion film on the CoNiFe film as a plating conductive base film, and a photoresist frame pattern is formed thereon.
An oNiFe film was plated. At this time, it can be seen that the phenomenon that the plating solution seeps into the lower part of the photoresist frame can be prevented, and the defective shape of the plating film can be prevented, so that a highly accurate pattern can be formed.

When O ₂ RIE or ion milling is performed in the photoresist frame forming step, the adhesion layer 2 is formed as an adhesive layer 2 under the conductive condition of the plating in order to increase the resistance value of the re-adhesion layer and improve the process stability. Geofilm 1 of 4
Cr, Ti, Ta, NiCr, Si, Al ₂ , which have higher sheet resistance than 6NiFe or CoNiFe material
O ₃ or the like is preferably used. Further, as the adhesion film, Cr, Ti, Ta, NiCr, Si or Al ₂ O ₃ ,
, Cr, Ti, Ta, NiCr, Si or Al ₂
Alloy film (metal) mainly composed of O ₃ material or C
r, Ti, Ta, NiCr, Si or Al ₂ O ₃ , a non-metallic composite film (for example, (Al ₂ O ₃ +
Si)) may be used.

Of course, it is also possible to use the above-mentioned magnetic film, permalloy. If the resistance value of the re-adhesion layer to the photoresist is high, plating does not grow from the re-adhesion layer, and plating occurs only from the underlayer, which is advantageous.

In the above description, 46NiFe having good writing characteristics was used as the plating conductive base film. However, the present invention is not limited to this. The Fe content of the base film is 10 to 30 wt%. Using a certain FeNi alloy,
Cr, Ti, Ta, NiCr, Si
Or Al ₂ O ₃ , or Cr, Ti, Ta, NiCr,
An alloy film mainly composed of Si or Al ₂ O ₃ material, or a non-metallic composite film mainly composed of Cr, Ti, Ta, NiCr, Si or Al ₂ O ₃ material (for example, (Al ₂ O ₃
+ Si)) can secure the above-mentioned adhesion.

Next, as still another embodiment of the present invention,
The plating process for coils and electrode terminals will be described. The coil 12 and the electrode terminals are made of Cu or A
Although it is formed of a material having a small specific resistance such as u, a photoresist frame pattern or a photoresist pattern is formed on the plating conductive base film, and a treatment such as pickling is performed as in the case of plating the magnetic film described above. Thereafter, electroplating is performed in a solution.

At this time, the plating solution may soak into the interface between the photoresist frame and the plating conductive base film, and the plating film may grow to the lower part of the photoresist pattern. As a method for preventing this, permalloy or Cr, T serving as an adhesion layer as a protective film on the plating conductive underlying film is used.
Forming a film of i, Ta, NiCr, Si, Al ₂ O _3, etc. in the same manner can prevent the defective shape of the plating film.

Although the coil 12 and the electrode terminals are formed of Cu or Au including the plating conductive base film, the resist frame or the resist pattern may be recreated in the mass production process. If Cu of the plating conductive base film is oxidized (surface oxidized) or etched at the time of this regeneration, it causes variations in film thickness and plating defects. Therefore, Cr, Ti, Ta, Ni are used as a protective film for protecting the surface of the plating conductive film from being oxidized or etched.
By forming Cr, Si, and Al ₂ O ₃ to a thickness of about 2 nm, Cu in the plating conductive base film is not oxidized or etched during storage in the air or during reproduction of the photoresist pattern, so that a predetermined coil can be formed. And an electrode terminal can be formed. The adhesion layer at the plating deposition part is removed by wet etching, RIE or ion milling as a plating pretreatment.

As for the lower shield and the upper shield, it is possible to adopt a method of using a photoresist frame in the same manner as the above-described method of forming the upper write pole. However, there is a method in which a plating film is formed on the entire surface of the substrate without using a photoresist frame, and then a pattern is formed by an etching method. In this case, the NiFe-based material used as the plating conductive base film has a property of easily forming a surface oxide film.
u or Cr, Ti, Ta, NiCr, Si, Al ₂
By forming O ₃ at 2 nm or more, formation of a surface oxide film is prevented, and long-term storage in the atmosphere is possible. A method in which O ₂ RIE, ion milling, or wet etching is performed as a pre-plating process to remove these protective films, and then plating is performed is effective in a mass production process.

As described above, in the thin-film magnetic head, the upper write port 10 and the lower shield 14,
When the upper shield 15, the coil 12, and the electrode terminals are manufactured by electroplating, Au,
By forming an alloy film mainly composed of Cr, Ti, Ta, NiCr, Si, Al ₂ O ₃ and this material, it is possible to optimize the material of the plating conductive underlayer film and to have a highly precise dimensional accuracy, It becomes possible to form a plating film having an appropriate material and adhesion.

By using the thin-film magnetic head thus manufactured, it is possible to configure a magnetic disk drive having a high recording density.

As described above, the embodiments of the present invention include those having the following configurations, functions and functions.

A plating conductive base film having a thickness of a suitable material for forming the upper write pole is formed, and Permalloy or Au, Cr, Ti, Ta is formed on the surface thereof as an adhesion layer with the resist frame. , NiCr, NiFe, Si,
Al ₂ O ₃ or an alloy film mainly composed of this material, or a nonmetallic composite film mainly composed of this material (for example, (Al
By forming ₂ O ₃ + Si)), plating can be formed without causing a frame pattern defect during plating pretreatment or plating deposition.

When a plating conductive base film used for forming an upper write pole is formed and then a resist frame is formed and then dry etching such as O ₂ RIE is performed, an FeNi-based material is used as the plating conductive base film. Formed on the surface of permalloy or Au, Cr, Ti,
Ta, NiCr, NiFe, Si, Al ₂ O _3, or an alloy film mainly composed of this material, or a nonmetallic composite film composed mainly of this material (for example, (Al ₂ O ₃ + Si)) is converted to O _2.
In an acid cleaning time of the RIE process or the pre-plating process, a film having a thickness that can be removed is formed. Thus, plating can be formed without causing a frame pattern defect during plating pretreatment or plating deposition.

Further, a material and a film thickness suitable for forming each of the upper write pole, the lower shield, the upper shield, the coil, and the electrode terminal are formed as a plating conductive base film.
The surface is continuously sputtered, and a permalloy or A is used as a protective film for preventing the oxidation of the underlayer.
u, Cr, Ti, Ta, NiCr, NiFe, Si, A
l ₂ O ₃ or an alloy film mainly composed of this material, or a composite film mainly composed of this material is formed. As a result, it is possible to prevent oxidation and corrosion of the plating conductive base film, and to form a plated film having a uniform shape, a film composition, and a sufficient adhesion to a subsequent process.

Therefore, as the adhesion film formed on the plating conductive underlayer film, various materials such as metal films, insulating films, and semiconductor films other than the materials shown here, as long as they are materials that adhere to the plating conductive underlying film and the resist frame. Materials can be used.

[0055]

According to the present invention, a material for a plating base film suitable for production by using an electroplating method is selected, and an upper write port and a lower seal having strictly controlled width, thickness and material are selected. The present invention can provide a method of manufacturing a thin-film magnetic head including a shield, an upper shield, a coil, and an electrode terminal.

[Brief description of the drawings]

FIG. 1 O ₂ R for removing the tail of a resist frame
It is a figure showing a plating formation process without IE processing.

FIG. 2 O ₂ R for removing footing of resist frame
It is a figure showing the plating formation process with IE processing.

FIG. 3 is a view showing a state in which plating is formed on a substrate according to a conventional technique.

FIG. 4 is a view showing a shape in which plating is deposited from a redeposition film on a side surface of a resist frame and a plating shape in which the resist frame is removed.

FIG. 5 is a cross-sectional view of the tip of the thin-film magnetic head.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 plating conductive base film 2 adhesion layer 3 resist frame 4 bottom of resist frame 5 redeposition film 6 plating film serving as upper write port 7 unnecessary plating film 8 plating and soaking of acid solution 10 top Writing pole 11 Gap (GAP) 12 Coil 13 Insulating film 14 Lower shield 15 Upper shield 16 MR sensor part 17 Hard bias layer and electrode layer 18 Substrate

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Makoto Morishiri 2880 Kozu, Kozuhara-shi, Kanagawa Prefecture, Ltd.Storage Systems Division, Hitachi, Ltd. In System Division (72) Inventor Hiromi Shiina 3-10-2 Bentencho, Hitachi City, Ibaraki Prefecture Hitachi Kyowa Engineering Co., Ltd. F-term (reference) 5D033 BA07 DA02 DA04 DA08 DA31

Claims (8)

[Claims] A step of forming an adhesion film having good adhesion to the plating conduction base film and the photoresist on a surface of the plating conduction base film; and a step of forming a photoresist frame on the adhesion film. Removing the adhesion film corresponding to the portion where the plating film is to be formed; forming a plating film in the portion where the adhesion film has been removed; and removing the unnecessary adhesion film and unnecessary portions after removing the photoresist frame. A method for manufacturing a thin-film magnetic head, comprising: a step of removing a plating conductive base film and an unnecessary plating film. 2. A step of forming an adhesion film having good adhesion to the plating conduction base film and the photoresist on a surface of the plating conduction base film; and a step of forming a photoresist frame on the adhesion film. Removing a footing portion formed under the photoresist frame by dry etching or ion milling; removing the adhesion film corresponding to a portion where a plating film is to be formed; and performing the dry etching or ion etching. A step of removing a re-adhesion film due to the adhesion film that has been removed by milling and adhered to the side surface of the resist frame; a step of forming a plating film on a portion where the adhesion film and the re-adhesion film have been removed; After removing the frame, remove the unnecessary adhesion film, unnecessary plating conductive base film and unnecessary plating film. Method of manufacturing a thin film magnetic head characterized by having a step. 3. The method of manufacturing a thin-film magnetic head according to claim 1, wherein an FeNi alloy having an Fe content of 30 wt% or more is used as the plating conductive base film, and Fe is used as the adhesion film. A method for manufacturing a thin-film magnetic head, comprising using an FeNi alloy having a content of 10 to 30 wt%. 4. The method of manufacturing a thin-film magnetic head according to claim 1, wherein an FeNi alloy having an Fe content of 30 wt% or more is used as the plating conductive underlayer, and Cr is used as the adhesion film. , Ti, Ta, NiCr, Si
Or Al ₂ O ₃ , or Cr, Ti, Ta, NiCr,
Si or an alloy film mainly containing materials Al ₂ O _3, or be Cr, Ti, Ta, NiCr, characterized by the use of composite membranes of nonmetal mainly composed of Si or Al ₂ O _3, of the material A method for manufacturing a thin film magnetic head. 5. The method for manufacturing a thin-film magnetic head according to claim 1, wherein the plating conductive base film has an Fe content of 10 to 30 watts.
using a FeNi alloy which is at least 0.1% by weight, and forming Cr, Ti, Ta, NiCr, Si
Or Al ₂ O ₃ , or Cr, Ti, Ta, NiCr,
Si or an alloy film mainly containing materials Al ₂ O _3, or be Cr, Ti, Ta, NiCr, characterized by the use of composite membranes of nonmetal mainly composed of Si or Al ₂ O _3, of the material A method for manufacturing a thin film magnetic head. 6. The method for manufacturing a thin-film magnetic head according to claim 1, wherein a CoNiFe alloy is used as the plating conductive base film, and an Fe content of the adhesion film is 10 to 30 wt%. FeNi alloy or Cr, Ti, Ta, NiC
r, Si or Al ₂ O ₃ , or Cr, Ti, Ta, N
an alloy film mainly composed of iCr, Si or Al ₂ O ₃ material,
Or Cr, Ti, Ta, NiCr, Si or Al ₂
A method for manufacturing a thin-film magnetic head, comprising using a non-metallic composite film mainly composed of O ₃ . 7. A thin-film magnetic head manufactured by using the method for manufacturing a thin-film magnetic head according to claim 1. 8. A magnetic disk drive using the thin-film magnetic head according to claim 7.