JP2001098379A - Vapor phase epitaxial growth device - Google Patents

Vapor phase epitaxial growth device

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Publication number
JP2001098379A
JP2001098379A JP27504399A JP27504399A JP2001098379A JP 2001098379 A JP2001098379 A JP 2001098379A JP 27504399 A JP27504399 A JP 27504399A JP 27504399 A JP27504399 A JP 27504399A JP 2001098379 A JP2001098379 A JP 2001098379A
Authority
JP
Japan
Prior art keywords
substrate holding
holding member
fitting
cylindrical member
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27504399A
Other languages
Japanese (ja)
Other versions
JP4260307B2 (en
Inventor
Hirotsugu Takizawa
澤 洋 次 瀧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP27504399A priority Critical patent/JP4260307B2/en
Publication of JP2001098379A publication Critical patent/JP2001098379A/en
Application granted granted Critical
Publication of JP4260307B2 publication Critical patent/JP4260307B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To improve the positioning accuracy of the center of a substrate holding member with respect to a rotating cylindrical member, and to prevent both members from being fixed to each other by a film forming material. SOLUTION: The vapor phase epitaxial growth device comprises a substrate holding member 2 having a circular recessed part 5 to receive a substrate to be treated on an upper surface and a circular opening part 6 smaller in diameter than the substrate formed on a bottom surface of the circular recessed part 5, and a rotating cylindrical member 3 with the substrate holding member 2 mounted thereon in an attachable/detachable manner. A plurality of fitting projecting parts 7 are provided on a circumferential edge part of the bottom surface of the substrate holding member 2 toward the rotating cylindrical member 3 side and a plurality of fitting recessed parts 8 with a plurality of fitting projecting parts fitted thereto as densely as possible are formed on a circumferential edge part of an end face of the rotating cylindrical member 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、被処理基板の表面
に成膜ガスを供給し、熱反応を利用した気相成長により
成膜処理する気相成長装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus for supplying a film forming gas to the surface of a substrate to be processed and performing a film forming process by vapor phase growth utilizing a thermal reaction.

【0002】[0002]

【従来の技術】図4(a)、(b)は、従来の気相成長
装置の基板保持装置を示しており、この従来の基板保持
装置40は、基板保持部材41と、この基板保持部材4
1が上端に填め込まれた回転可能な回転円筒部材42と
を備えている。回転円筒部材42の周囲には筒状遮蔽部
材43が配置されている。
2. Description of the Related Art FIGS. 4 (a) and 4 (b) show a substrate holding device of a conventional vapor phase growth apparatus. This conventional substrate holding device 40 comprises a substrate holding member 41 and a substrate holding member 41. 4
1 has a rotatable rotary cylindrical member 42 fitted at the upper end. A cylindrical shielding member 43 is arranged around the rotating cylindrical member 42.

【0003】基板保持部材41の上面には被処理基板を
受け入れる円形凹部44が形成されており、円形凹部4
4の底面には、被処理基板よりも小径な円形開口部45
が形成されている。基板保持部材41の底面周縁部に
は、回転円筒部材42の上端の縮径部46に可及的密に
嵌合された環状片47が垂下形成されている。
A circular recess 44 for receiving a substrate to be processed is formed on the upper surface of the substrate holding member 41.
4 has a circular opening 45 smaller in diameter than the substrate to be processed.
Are formed. An annular piece 47 which is fitted as closely as possible to the reduced diameter portion 46 at the upper end of the rotary cylindrical member 42 is formed at the periphery of the bottom surface of the substrate holding member 41.

【0004】[0004]

【発明が解決しようとする課題】前記の如く従来の気相
成長装置の基板保持装置40においては、基板保持部材
41の底面周縁部に形成した環状片47を回転円筒部材
42の上端の縮径部46に嵌合するようにしているの
で、回転円筒部材42に対する基板保持部材41の中心
位置の位置合わせの精度が、環状片47及び縮径部46
における円筒形状加工の精度に左右される。
As described above, in the conventional substrate holding apparatus 40 of the vapor phase growth apparatus, the annular piece 47 formed on the peripheral edge of the bottom surface of the substrate holding member 41 is reduced in diameter at the upper end of the rotary cylindrical member 42. Since the fitting is made to the portion 46, the accuracy of the alignment of the center position of the substrate holding member 41 with respect to the rotary cylindrical member 42 is improved by the annular piece 47 and the reduced diameter portion 46.
Depends on the accuracy of the cylindrical processing.

【0005】ところが、一般に円筒形状加工を精度よく
行うことは困難であり、その結果、回転円筒部材42に
対する基板保持部材41の位置合わせの精度が悪くなっ
てしまう。
[0005] However, it is generally difficult to accurately process the cylindrical shape, and as a result, the accuracy of the positioning of the substrate holding member 41 with respect to the rotating cylindrical member 42 deteriorates.

【0006】また、被処理基板に対して成膜処理を施す
際に、基板保持部材41と筒状遮蔽部材43との間の隙
間を介して成膜材料が回り込み、基板保持部材41と回
転円筒部材42との連結部分に成膜材料が付着して両者
を固着してしまう場合がある。
Further, when performing a film forming process on a substrate to be processed, a film forming material flows around through a gap between the substrate holding member 41 and the cylindrical shielding member 43, and the substrate holding member 41 and the rotating cylinder are rotated. There is a case where the film-forming material adheres to the connection portion with the member 42 to fix them together.

【0007】本発明は、上述した事情に鑑みてなされた
ものであって、回転円筒部材に対する基板保持部材の中
心位置の位置合わせの精度を向上できると共に、成膜材
料による両部材の固着を防止することができる気相成長
装置を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and can improve the accuracy of positioning the center position of a substrate holding member with respect to a rotating cylindrical member, and prevent the two members from sticking to each other by a film forming material. It is an object of the present invention to provide a vapor phase growth apparatus capable of performing the above.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
に、本発明による気相成長装置は、被処理基板を受け入
れる円形凹部が上面に形成され、前記円形凹部の底面に
前記被処理基板よりも小径な円形開口部が形成された基
板保持部材と、前記基板保持部材が着脱自在に取り付け
られる回転可能な回転円筒部材と、を備え、前記基板保
持部材の底面周縁部には複数の嵌合凸部が前記回転円筒
部材側に向けて突設されており、前記回転円筒部材の端
面周縁部には前記複数の嵌合凸部が可及的密に嵌合され
る複数の嵌合凹部が形成されていることを特徴とする。
In order to solve the above-mentioned problems, in the vapor phase growth apparatus according to the present invention, a circular concave portion for receiving a substrate to be processed is formed on an upper surface, and a circular concave portion is formed on a bottom surface of the circular concave portion. A substrate holding member formed with a circular opening having a small diameter, and a rotatable rotating cylindrical member to which the substrate holding member is detachably attached. A plurality of projections are provided protruding toward the rotary cylindrical member, and a plurality of fitting recesses into which the plurality of fitting projections are fitted as closely as possible are provided at the peripheral edge of the rotating cylindrical member. It is characterized by being formed.

【0009】また、好ましくは、前記複数の嵌合凸部及
び前記複数の嵌合凹部は、それぞれ、等角度間隔にて配
設されている。
Preferably, the plurality of fitting protrusions and the plurality of fitting recesses are respectively arranged at equal angular intervals.

【0010】また、好ましくは、前記回転円筒部材の周
囲に配置された筒状遮蔽部材をさらに有し、前記基板保
持部材の側周面に、前記筒状遮蔽部材の先端部を超えて
延びる環状張出し片を突設する。
Preferably, the apparatus further comprises a cylindrical shielding member disposed around the rotary cylindrical member, and an annular shape extending on a side peripheral surface of the substrate holding member beyond a tip end of the cylindrical shielding member. An overhanging piece is provided.

【0011】また、好ましくは、前記環状張出し片の周
縁部から前記筒状遮蔽部材側に向けて環状折曲片を形成
する。
Preferably, an annular bent piece is formed from a peripheral portion of the annular projecting piece toward the cylindrical shielding member.

【0012】[0012]

【発明の実施の形態】以下、本発明の一実施形態による
気相成長装置について図面を参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a vapor phase growth apparatus according to an embodiment of the present invention will be described with reference to the drawings.

【0013】図1(a)、(b)は、本実施形態による
気相成長装置において被処理基板を保持するための基板
保持装置を示しており、この基板保持装置1は、基板保
持部材2と、この基板保持部材2が着脱自在に上端に取
り付けられた回転可能な回転円筒部材3とを備えてい
る。回転円筒部材3の周囲には筒状遮蔽部材4が配置さ
れている。基板保持部材2の上面には被処理基板を受け
入れる円形凹部5が形成されており、この円形凹部5の
底面には被処理基板よりも小径な円形開口部6が形成さ
れている。
FIGS. 1A and 1B show a substrate holding device for holding a substrate to be processed in the vapor phase growth apparatus according to the present embodiment. The substrate holding device 1 includes a substrate holding member 2. And a rotatable rotary cylindrical member 3 to which the substrate holding member 2 is detachably attached at the upper end. A cylindrical shielding member 4 is arranged around the rotating cylindrical member 3. A circular recess 5 for receiving the substrate to be processed is formed on the upper surface of the substrate holding member 2, and a circular opening 6 having a smaller diameter than the substrate to be processed is formed on the bottom of the circular recess 5.

【0014】基板保持部材2の底面周縁部には複数の嵌
合凸部7が下方に向けて突設されている。一方、回転円
筒部材3の上端面周縁部には複数の嵌合凹部8が形成さ
れている。嵌合凸部7は、回転円筒部材3の回転軸心の
方向に延びる互いに平行な一対の側面と、回転軸心に直
交する方向に延びる底面とから構成されており、嵌合凹
部8もまた、回転軸心方向に延びる互いに平行な一対の
側面と、回転軸心に直交する方向に延びる底面とから構
成されている。
A plurality of fitting projections 7 project downward from the peripheral edge of the bottom surface of the substrate holding member 2. On the other hand, a plurality of fitting recesses 8 are formed in the peripheral edge of the upper end surface of the rotating cylindrical member 3. The fitting protrusion 7 is composed of a pair of parallel side surfaces extending in the direction of the rotation axis of the rotary cylindrical member 3 and a bottom surface extending in a direction perpendicular to the rotation axis. , A pair of parallel side surfaces extending in the direction of the rotation axis, and a bottom surface extending in a direction perpendicular to the rotation axis.

【0015】複数の嵌合凸部7及び複数の嵌合凹部8
は、それぞれ、等角度間隔にて配設されており、具体的
には45度間隔でそれぞれ8個づつ形成されている。各
嵌合凸部7は各嵌合凹部8に対して可及的密に嵌合さ
れ、これにより、基板保持部材2が回転円筒部材3の上
端に着脱自在に取り付けられている。
A plurality of fitting projections 7 and a plurality of fitting recesses 8
Are arranged at equal angular intervals, and specifically, eight are formed at 45-degree intervals. Each fitting projection 7 is fitted as closely as possible to each fitting recess 8, whereby the substrate holding member 2 is detachably attached to the upper end of the rotary cylindrical member 3.

【0016】なお、複数の嵌合凸部7及び複数の嵌合凹
部8の配置は等角度間隔に限られるものではなく、不等
角度間隔にて配置することもできる。
The arrangement of the plurality of fitting projections 7 and the plurality of fitting recesses 8 is not limited to equiangular intervals, but may be arranged at unequal angular intervals.

【0017】前記の如く嵌合凸部7と嵌合凹部8とのは
め合いにより基板保持部材2を回転円筒部材3に取り付
ける場合には、嵌合凸部7及び嵌合凹部8の加工精度に
よって両部材2、3間の位置合わせ精度が決まる。そし
て、嵌合凸部7及び嵌合凹部8は平面加工により形成す
ることができるので、加工が容易であり且つ高精度の加
工が可能となり、回転円筒部材3に対する基板保持部材
2の中心位置の位置合わせ精度を向上させることができ
る。
When the substrate holding member 2 is attached to the rotary cylindrical member 3 by fitting the fitting projection 7 and the fitting recess 8 as described above, the processing accuracy of the fitting projection 7 and the fitting recess 8 depends on the processing accuracy. The positioning accuracy between the two members 2 and 3 is determined. Since the fitting projection 7 and the fitting recess 8 can be formed by planar processing, the processing is easy and high-precision processing is possible, and the center position of the substrate holding member 2 with respect to the rotary cylindrical member 3 can be adjusted. Positioning accuracy can be improved.

【0018】以上述べたように本実施形態による気相成
長装置によれば、基板保持部材2と回転円筒部材3との
連結を、嵌合凸部7と嵌合凹部8とのはめ合いにより達
成するようにしたので、回転円筒部材3に対する基板保
持部材2の中心位置の位置合わせ精度を向上させること
ができる。
As described above, according to the vapor phase growth apparatus of the present embodiment, the connection between the substrate holding member 2 and the rotating cylindrical member 3 is achieved by the fitting of the fitting projection 7 and the fitting recess 8. As a result, the positioning accuracy of the center position of the substrate holding member 2 with respect to the rotating cylindrical member 3 can be improved.

【0019】また、本実施形態の第1の変形例として
は、図2に示したように基板保持部材2の側周面に、筒
状遮蔽部材4の上端を超えて延びる環状張出し片9を突
設することもできる。
As a first modification of the present embodiment, as shown in FIG. 2, an annular projecting piece 9 extending beyond the upper end of the cylindrical shielding member 4 is provided on the side peripheral surface of the substrate holding member 2. It can be protruded.

【0020】このように基板保持部材2に環状張出し片
9を設けることによって、被処理基板に対して成膜処理
を施す際に成膜材料が筒状遮蔽部材4の内側に回り込む
ことを防止することが可能であり、これにより、成膜材
料の付着による基板保持部材2と回転円筒部材3との固
着を防止することができる。
The provision of the annular projecting piece 9 on the substrate holding member 2 prevents the film-forming material from going inside the cylindrical shielding member 4 when performing the film-forming process on the substrate to be processed. This makes it possible to prevent the substrate holding member 2 and the rotating cylindrical member 3 from sticking to each other due to the adhesion of the film forming material.

【0021】また、本実施形態の第2の変形例として
は、図3に示したように、環状張出し片9の周縁部から
下方に向けて環状折曲片10を形成することもできる。
As a second modification of the present embodiment, as shown in FIG. 3, an annular bent piece 10 can be formed downward from the peripheral edge of the annular projecting piece 9.

【0022】このようにすれば、前記第1の変形例より
もさらに確実に成膜材料の回り込みを防止することがで
きる。
This makes it possible to more reliably prevent the film-forming material from wrapping around than in the first modification.

【0023】[0023]

【発明の効果】以上述べたように本発明による気相成長
装置によれば、基板保持部材と回転円筒部材との連結
を、嵌合凸部と嵌合凹部とのはめ合いにより達成するよ
うにしたので、回転円筒部材に対する基板保持部材の中
心位置の位置合わせ精度を向上させることができる。
As described above, according to the vapor phase growth apparatus of the present invention, the connection between the substrate holding member and the rotary cylindrical member is achieved by the fitting between the fitting projection and the fitting recess. Therefore, the alignment accuracy of the center position of the substrate holding member with respect to the rotating cylindrical member can be improved.

【0024】また、本発明による気相成長装置によれ
ば、基板保持部材の側周面に環状張出し片を突設したの
で、成膜材料の回り込みによる基板保持部材と回転円筒
部材との固着を防止することができる。
Further, according to the vapor phase growth apparatus of the present invention, since the annular projecting piece protrudes from the side peripheral surface of the substrate holding member, it is possible to prevent the substrate holding member and the rotating cylindrical member from sticking to each other due to the wraparound of the film forming material. Can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明の一実施形態による気相成長装
置の基板保持装置を示した平面図、(b)は(a)に筒
状遮蔽部材を加えた側面図であって一部を断面で示した
図。
FIG. 1A is a plan view showing a substrate holding device of a vapor phase growth apparatus according to an embodiment of the present invention, and FIG. 1B is a side view in which a cylindrical shielding member is added to FIG. FIG.

【図2】図1に示した実施形態の第1の変形例を示した
側面図であって一部を断面で示した図。
FIG. 2 is a side view showing a first modified example of the embodiment shown in FIG. 1, and is a partly sectional view.

【図3】図1に示した実施形態の第2の変形例を示した
側面図であって一部を断面で示した図。
1. FIG. 3 is a side view showing a second modification of the embodiment shown in FIG.

【図4】(a)は従来の気相成長装置の基板保持装置を
示した平面図、(b)は(a)に筒状遮蔽部材を加えた
側面図であって一部を断面で示した図。
FIG. 4A is a plan view showing a substrate holding device of a conventional vapor phase growth apparatus, and FIG. 4B is a side view showing a state in which a cylindrical shielding member is added to FIG. Figure.

【符号の説明】[Explanation of symbols]

1 基板保持装置 2 基板保持部材 3 回転円筒部材 4 筒状遮蔽部材 5 円形凹部 6 円形開口部 7 嵌合凸部 8 嵌合凹部 9 環状張出し片 10 環状折曲片 DESCRIPTION OF SYMBOLS 1 Substrate holding device 2 Substrate holding member 3 Rotating cylindrical member 4 Cylindrical shielding member 5 Circular concave part 6 Circular opening part 7 Fitting convex part 8 Fitting concave part 9 Annular protruding piece 10 Annular bent piece

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】被処理基板を受け入れる円形凹部が上面に
形成され、前記円形凹部の底面に前記被処理基板よりも
小径な円形開口部が形成された基板保持部材と、前記基
板保持部材が着脱自在に取り付けられる回転可能な回転
円筒部材と、を備え、前記基板保持部材の底面周縁部に
は複数の嵌合凸部が前記回転円筒部材側に向けて突設さ
れており、前記回転円筒部材の端面周縁部には前記複数
の嵌合凸部が可及的密に嵌合される複数の嵌合凹部が形
成されていることを特徴とする気相成長装置。
1. A substrate holding member having a circular concave portion formed on an upper surface for receiving a substrate to be processed and a circular opening smaller in diameter than the substrate to be processed formed on a bottom surface of the circular concave portion. A freely rotating rotatable cylindrical member, wherein a plurality of fitting projections are provided on a peripheral edge of a bottom surface of the substrate holding member so as to project toward the rotary cylindrical member, and the rotary cylindrical member is provided. A plurality of fitting recesses into which the plurality of fitting protrusions are fitted as closely as possible at an end surface peripheral portion.
【請求項2】前記複数の嵌合凸部及び前記複数の嵌合凹
部は、それぞれ、等角度間隔にて配設されていることを
特徴とする請求項1記載の気相成長装置。
2. The vapor phase growth apparatus according to claim 1, wherein said plurality of fitting projections and said plurality of fitting recesses are respectively arranged at equal angular intervals.
【請求項3】前記回転円筒部材の周囲に配置された筒状
遮蔽部材をさらに有し、前記基板保持部材の側周面に、
前記筒状遮蔽部材の先端部を超えて延びる環状張出し片
を突設したことを特徴とする請求項1又は2に記載の気
相成長装置。
3. The apparatus according to claim 1, further comprising: a cylindrical shielding member disposed around the rotary cylindrical member, wherein a side peripheral surface of the substrate holding member is provided.
The vapor phase growth apparatus according to claim 1, wherein an annular projecting piece extending beyond a distal end portion of the cylindrical shielding member is protruded.
【請求項4】前記環状張出し片の周縁部から前記筒状遮
蔽部材側に向けて環状折曲片を形成したことを特徴とす
る請求項3記載の気相成長装置。
4. The vapor phase growth apparatus according to claim 3, wherein an annular bent piece is formed from a peripheral edge of said annular projecting piece toward said cylindrical shielding member.
JP27504399A 1999-09-28 1999-09-28 Vapor growth equipment Expired - Fee Related JP4260307B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27504399A JP4260307B2 (en) 1999-09-28 1999-09-28 Vapor growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27504399A JP4260307B2 (en) 1999-09-28 1999-09-28 Vapor growth equipment

Publications (2)

Publication Number Publication Date
JP2001098379A true JP2001098379A (en) 2001-04-10
JP4260307B2 JP4260307B2 (en) 2009-04-30

Family

ID=17550073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27504399A Expired - Fee Related JP4260307B2 (en) 1999-09-28 1999-09-28 Vapor growth equipment

Country Status (1)

Country Link
JP (1) JP4260307B2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465819A (en) * 1990-07-06 1992-03-02 Nissin Electric Co Ltd Vapor growth device
JPH0925195A (en) * 1995-06-07 1997-01-28 Saint Gobain Norton Ind Ceramics Corp Method and apparatus for building up substance
JPH1027757A (en) * 1996-07-09 1998-01-27 Shibaura Eng Works Co Ltd Vacuum processing device
JP2001203163A (en) * 1999-09-01 2001-07-27 Applied Materials Inc Method and apparatus for preventing deposition on edge

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465819A (en) * 1990-07-06 1992-03-02 Nissin Electric Co Ltd Vapor growth device
JPH0925195A (en) * 1995-06-07 1997-01-28 Saint Gobain Norton Ind Ceramics Corp Method and apparatus for building up substance
JPH1027757A (en) * 1996-07-09 1998-01-27 Shibaura Eng Works Co Ltd Vacuum processing device
JP2001203163A (en) * 1999-09-01 2001-07-27 Applied Materials Inc Method and apparatus for preventing deposition on edge

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