JP2001094084A - Solid state color imaging device - Google Patents
Solid state color imaging deviceInfo
- Publication number
- JP2001094084A JP2001094084A JP26515399A JP26515399A JP2001094084A JP 2001094084 A JP2001094084 A JP 2001094084A JP 26515399 A JP26515399 A JP 26515399A JP 26515399 A JP26515399 A JP 26515399A JP 2001094084 A JP2001094084 A JP 2001094084A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- imaging device
- light receiving
- convex lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 22
- 239000007787 solid Substances 0.000 title abstract 3
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000009499 grossing Methods 0.000 description 6
- 206010034960 Photophobia Diseases 0.000 description 4
- 208000013469 light sensitivity Diseases 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 210000000349 chromosome Anatomy 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、カラービデオカメ
ラ等に内蔵されるカラー固体撮像素子(電荷結合素子:
CCD)に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color solid-state image pickup device (charge-coupled device:
CCD).
【0002】[0002]
【従来の技術】従来より、カラー固体撮像素子を製造す
る際、カラー色分解フィルタの形成には、個別のチップ
に切断する前の、固体撮像素子の回路を形成したウエハ
ー上にカラーフィルタを形成して、その後、個別のカラ
ー固体撮像素子のチップを切り出し、適宜周辺回路を形
成した部材に埋め込んで電気接続させ、完成品としてい
るものである。カラー色分解フィルタ以外の周辺部材層
もウエハー状の状態で各々形成される。2. Description of the Related Art Conventionally, when a color solid-state image sensor is manufactured, a color filter is formed on a wafer on which a circuit of the solid-state image sensor is formed before cutting into individual chips. Thereafter, chips of the individual color solid-state imaging devices are cut out, embedded in a member on which a peripheral circuit is appropriately formed, and electrically connected to each other to obtain a completed product. Peripheral member layers other than the color separation filters are also formed in a wafer state.
【0003】この種のカラー固体撮像素子としては、図
2に示すように、シリコン等の基体1内に埋設された複
数の受光素子2と、各受光素子2の光入射側に設けられ
た赤、緑、青のカラーフィルタ層7とでその主要部が構
成されるものが知られている。また、透明材料で構成さ
れた下部平滑化層5を、受光素子2の間隙部に対応する
部位に設けられるブラックマトリクス6、およびカラー
フィルタ層7の形成前に形成することで表面を平坦化
し、それらの形状を良くする手法も用いられている。As shown in FIG. 2, a color solid-state imaging device of this type includes a plurality of light-receiving elements 2 embedded in a substrate 1 made of silicon or the like, and a red light-receiving element provided on the light incident side of each light-receiving element 2. , Green and blue color filter layers 7 are known as main components. In addition, the surface is flattened by forming the lower smoothing layer 5 made of a transparent material before forming the black matrix 6 and the color filter layer 7 which are provided at the portions corresponding to the gaps of the light receiving element 2, Techniques for improving their shapes are also used.
【0004】ここでカラー固体撮像素子に要求される品
質上の課題として、光感度の向上とクロストークの防止
がある。このために通常、図3に示すように、カラーフ
ィルタ上に透明樹脂で構成されたオーバーコート層8を
介して凸レンズ状の部材(凸レンズ体9群)を設けて、
外界のイメージ光を固体撮像素子上の受光素子2に集光
して入射させる工夫が為されている。これにより、光感
度の向上が達成される。[0004] Here, quality issues required for the color solid-state imaging device include improvement of light sensitivity and prevention of crosstalk. For this purpose, usually, as shown in FIG. 3, a convex lens-shaped member (group of convex lens bodies 9) is provided on a color filter via an overcoat layer 8 made of a transparent resin.
The image light of the external world is condensed and incident on the light receiving element 2 on the solid-state imaging device. Thereby, the improvement of the light sensitivity is achieved.
【0005】しかしながら、ある種の固体撮像素子の受
光素子には、素子中央面に遮光性の電極層が部分的に存
在しているものがあり、この場合、上記従来の凸レンズ
体をカラーフィルタ上に設けると、該遮光性電極層上に
入射光が集中してしまうため、従来の、カラーフィルタ
と凸レンズ体を組み合わせた形態は採用できなかった。However, some light-receiving elements of solid-state imaging devices have a light-shielding electrode layer partially present on the central surface of the element. In this case, the above-mentioned conventional convex lens body is placed on a color filter. In this case, since incident light concentrates on the light-shielding electrode layer, the conventional configuration in which a color filter and a convex lens body are combined cannot be adopted.
【0006】[0006]
【発明が解決しようとする課題】本発明は上記の問題点
を解決するために為されたものであって、その課題とす
るところは、受光素子中央面に遮光性の電極層が部分的
に存在している種類の固体撮像素子にあっても、カラー
フィルタ上に凸レンズ体を採用しながら、上記不具合を
生ぜず光感度の向上が図れるカラー固体撮像素子を提供
することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a light-receiving element in which a light-shielding electrode layer is partially formed on the central surface. It is an object of the present invention to provide a color solid-state imaging device capable of improving the light sensitivity without causing the above-mentioned problem, while employing a convex lens body on a color filter even in the existing types of solid-state imaging devices.
【0007】[0007]
【課題を解決するための手段】本発明は、固体撮像素子
の受光素子に対して、少なくともカラーフィルタおよび
凸レンズ体を形成したカラー固体撮像素子において、受
光素子の中央部に存する遮光性の電極層への集光を避け
るようにリング状の凸レンズ体を受光素子の上に設けた
ことを特徴とするカラー固体撮像素子である。According to the present invention, there is provided a color solid-state imaging device having at least a color filter and a convex lens body formed on a light-receiving element of a solid-state imaging device. A color solid-state imaging device is characterized in that a ring-shaped convex lens body is provided on a light receiving element so as to prevent light from condensing on the light receiving element.
【0008】[0008]
【発明の実施の形態】本発明の実施の形態を、以下に一
実施例と共に説明する。本発明のカラー固体撮像素子
は、図1(a)および(b)に示すように、少なくと
も、シリコン基体1と、このシリコン基体1内にマトリ
クス状に配設された複数の受光素子2と、該受光素子2
中央部およびそこから画素領域の外部に延在する電極層
3と、上記シリコン基体1上および電極層3上に設けら
れた透明な下部平滑化層5と、この下部平滑化層5上で
かつ各受光素子部の間隙部に対応する部位に設けられ
た、黒色染料で染色された被染色体からなる格子状のブ
ラックマトリクス6と、同じく下部平滑化層5上でかつ
各受光素子部に対応する部位に設けられた赤、緑、青
(R、G、B)のカラーフィルタ層7と、これらブラッ
クマトリクス6とカラーフィルタ層7上に設けられた透
明なオーバーコート層8と、このオーバーコート層8上
に、受光素子の中央部に存する遮光性の電極層への集光
を避けるように設けられたリング状の凸レンズ体9aと
でその主要部が構成されている。なお、図1(a)では
見やすくするためにブラックマトリクス6などを省略し
ている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below together with an embodiment. As shown in FIGS. 1A and 1B, the color solid-state imaging device according to the present invention includes at least a silicon substrate 1 and a plurality of light receiving devices 2 arranged in a matrix in the silicon substrate 1. The light receiving element 2
A central portion and an electrode layer 3 extending from the pixel region to the outside of the pixel region; a transparent lower smoothing layer 5 provided on the silicon substrate 1 and the electrode layer 3; A lattice-like black matrix 6 composed of chromosomes stained with a black dye provided at a portion corresponding to the gap between each light receiving element portion, and also on the lower smoothing layer 5 and corresponding to each light receiving element portion A red, green, blue (R, G, B) color filter layer 7 provided on the portion; a transparent overcoat layer 8 provided on the black matrix 6 and the color filter layer 7; The main part of the light-receiving element 8 is composed of a ring-shaped convex lens body 9a provided so as to prevent light from condensing on the light-shielding electrode layer existing in the central part of the light receiving element. In FIG. 1A, the black matrix 6 and the like are omitted for easy viewing.
【0009】なお、上記構成のうち、下部平滑化層5を
設ける前に、受光素子2が設けられた部位周辺に存在す
るシリコン基体1の凹部を埋めるように、充填層4を設
けることも行われる場合がある。In the above structure, before the lower smoothing layer 5 is provided, the filling layer 4 may be provided so as to fill the concave portion of the silicon substrate 1 around the portion where the light receiving element 2 is provided. May be asked.
【0010】そして、この構成のカラー固体撮像素子の
形成には、以下の手順を以て行われた。シリコン基体1
内にマトリクス状に複数の受光素子2を従来法により例
えば約10μm角ピッチで形成し、形成された受光素子
2中央部から画素領域の外部にまで延在する電極層3を
アルミニウムにて配設した。The formation of the color solid-state image pickup device having this structure was performed according to the following procedure. Silicon substrate 1
A plurality of light receiving elements 2 are formed in a matrix at a pitch of, for example, about 10 μm by a conventional method, and an electrode layer 3 extending from the center of the formed light receiving element 2 to the outside of the pixel area is formed of aluminum. did.
【0011】次いで、シリコン基体1内に受光素子2の
形成されている部位周辺の凹部が埋まるように、充填層
4を、富士薬品(株)製の感光性アクリル樹脂「FVR
−10G」を用いて、20mW/cm2で15秒間のパ
ターン露光を行い、厚さ2.5μmに形成した。Next, the filling layer 4 is filled with a photosensitive acrylic resin "FVR" manufactured by Fuji Pharmaceutical Co., Ltd. so that the concave portion around the portion where the light receiving element 2 is formed in the silicon substrate 1 is filled.
Using “−10 G”, pattern exposure was performed at 20 mW / cm 2 for 15 seconds to form a film having a thickness of 2.5 μm.
【0012】さらに上記充填層4の上から下部平滑化層
5を、上記充填層4と同材料を用い、全面露光で同様の
条件にて厚さ2.0μmに形成した。Further, a lower smoothing layer 5 was formed from above the filling layer 4 using the same material as the above-mentioned filling layer 4 to a thickness of 2.0 μm under the same conditions as in the entire surface exposure.
【0013】次いで、格子状のブラックマトリクス6
を、被染色体をパターニングし黒色染料で染色して形成
した後、カラーフィルタ層7を顔料分散着色感光性レジ
ストにて従来法により厚さ1.0〜1.4μmに、赤、
緑、青の各色を順次繰り返し形成した。その上から、透
明なオーバーコート層8を従来法に従って形成した。な
お、カラーフィルタ層7の形成には、ほかに染色法など
も用いることができる。Next, a lattice-like black matrix 6
Is formed by patterning a chromosome and dyeing it with a black dye, and then forming a color filter layer 7 with a pigment-dispersed colored photosensitive resist to a thickness of 1.0 to 1.4 μm by a conventional method, red,
Each color of green and blue was sequentially and repeatedly formed. On top of that, a transparent overcoat layer 8 was formed according to a conventional method. The color filter layer 7 can be formed by a dyeing method or the like.
【0014】次に、上記オーバーコート層8上に、ジェ
イエスアール(株)製感光性樹脂材料「MFR345」
を用い、各受光素子2の位置に相当する部位の上部に、
且つ受光素子の中央部に存する遮光性の電極層の端部へ
の集光を避けるようなリング状の形態のパターンを形成
するように、パターンマスクを用いて露光時間190m
sec、硬膜焼成は200℃、180secの条件でパ
ターン形成し、リング状の凸レンズ体9aを得た。この
焼成の過程で、パターン化された各リング状形成体の断
面形状がなだらかな山形となり、結果として集光機能を
持ったリング状の凸レンズ体となった。なお、この凸レ
ンズ体9aの頂点までの高さ(膜厚)は約1.5μmで
あった。Next, a photosensitive resin material "MFR345" manufactured by JSR Co., Ltd.
And above the portion corresponding to the position of each light receiving element 2,
An exposure time of 190 m using a pattern mask so as to form a ring-shaped pattern that avoids condensing light at the end of the light-shielding electrode layer located at the center of the light receiving element.
The pattern was formed under the conditions of 200 ° C. and 180 seconds for hardening and baking to obtain a ring-shaped convex lens body 9a. In the course of this baking, the cross-sectional shape of each of the patterned ring-shaped formed bodies became a gentle mountain shape, resulting in a ring-shaped convex lens body having a condensing function. The height (film thickness) up to the apex of the convex lens body 9a was about 1.5 μm.
【0015】[0015]
【発明の効果】受光素子中央面に遮光性の電極層が部分
的に存在している種類の固体撮像素子にあっても、上記
のような形状の凸レンズ体をカラーフィルタ上に持った
固体撮像素子は、入射光が受光素子中央面の遮光性の電
極層に集光することによる不具合を生ずることなく光感
度の向上が図れる。また、入射光の大部分が効率よく該
当画素内の受光素子部に集光され、該当画素以外の部分
への光漏れ(クロストーク)が低減するため、混色が防
止される効果もある。According to the present invention, even in a solid-state imaging device of a type in which a light-shielding electrode layer is partially present on the central surface of a light-receiving device, a solid-state imaging device having a convex lens body having the above-described shape on a color filter is provided. The light sensitivity of the element can be improved without causing a problem due to the incident light being condensed on the light-shielding electrode layer on the central surface of the light receiving element. Further, most of the incident light is efficiently condensed on the light receiving element portion in the corresponding pixel, and light leakage (crosstalk) to a portion other than the corresponding pixel is reduced, so that there is an effect of preventing color mixing.
【0016】[0016]
【図1】(a)は、本発明のカラー固体撮像素子の1画
素分の平面図、(b)は、同断面図である。FIG. 1A is a plan view of one pixel of a color solid-state imaging device of the present invention, and FIG. 1B is a cross-sectional view thereof.
【図2】従来のカラー固体撮像素子の一例を示す断面図
である。FIG. 2 is a cross-sectional view illustrating an example of a conventional color solid-state imaging device.
【図3】従来のカラー固体撮像素子の一例を示す断面図
である。FIG. 3 is a cross-sectional view illustrating an example of a conventional color solid-state imaging device.
1 シリコン基体 2 受光素子 3 電極層 4 充填層 5 下部平滑化層 6 ブラックマトリクス 7 カラーフィルタ層 8 オーバーコート層 9,9a 凸レンズ体 DESCRIPTION OF SYMBOLS 1 Silicon base 2 Light receiving element 3 Electrode layer 4 Filling layer 5 Lower smoothing layer 6 Black matrix 7 Color filter layer 8 Overcoat layer 9, 9a Convex lens body
Claims (1)
ともカラーフィルタおよび凸レンズ体を形成したカラー
固体撮像素子において、受光素子の中央部に存する遮光
性の電極層への集光を避けるようにリング状の凸レンズ
体を受光素子の上に設けたことを特徴とするカラー固体
撮像素子。In a color solid-state imaging device having at least a color filter and a convex lens body formed on a light-receiving device of a solid-state imaging device, light is not focused on a light-shielding electrode layer located at a central portion of the light-receiving device. A color solid-state imaging device, wherein a ring-shaped convex lens body is provided on a light receiving element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26515399A JP2001094084A (en) | 1999-09-20 | 1999-09-20 | Solid state color imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26515399A JP2001094084A (en) | 1999-09-20 | 1999-09-20 | Solid state color imaging device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001094084A true JP2001094084A (en) | 2001-04-06 |
Family
ID=17413375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26515399A Pending JP2001094084A (en) | 1999-09-20 | 1999-09-20 | Solid state color imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001094084A (en) |
-
1999
- 1999-09-20 JP JP26515399A patent/JP2001094084A/en active Pending
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