JP2001093836A5 - - Google Patents

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Publication number
JP2001093836A5
JP2001093836A5 JP1999264699A JP26469999A JP2001093836A5 JP 2001093836 A5 JP2001093836 A5 JP 2001093836A5 JP 1999264699 A JP1999264699 A JP 1999264699A JP 26469999 A JP26469999 A JP 26469999A JP 2001093836 A5 JP2001093836 A5 JP 2001093836A5
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JP
Japan
Prior art keywords
reference plane
crystal film
semiconductor crystal
substrate
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999264699A
Other languages
English (en)
Japanese (ja)
Other versions
JP4350227B2 (ja
JP2001093836A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP26469999A priority Critical patent/JP4350227B2/ja
Priority claimed from JP26469999A external-priority patent/JP4350227B2/ja
Publication of JP2001093836A publication Critical patent/JP2001093836A/ja
Publication of JP2001093836A5 publication Critical patent/JP2001093836A5/ja
Application granted granted Critical
Publication of JP4350227B2 publication Critical patent/JP4350227B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP26469999A 1999-09-20 1999-09-20 半導体結晶成長方法 Expired - Fee Related JP4350227B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26469999A JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26469999A JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

Publications (3)

Publication Number Publication Date
JP2001093836A JP2001093836A (ja) 2001-04-06
JP2001093836A5 true JP2001093836A5 (enrdf_load_stackoverflow) 2006-11-02
JP4350227B2 JP4350227B2 (ja) 2009-10-21

Family

ID=17406967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26469999A Expired - Fee Related JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

Country Status (1)

Country Link
JP (1) JP4350227B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3875047B2 (ja) 2001-06-22 2007-01-31 シャープ株式会社 半導体基板の面方位依存性評価方法及びそれを用いた半導体装置
WO2003025263A1 (en) * 2001-09-13 2003-03-27 Japan Science And Technology Agency Nitride semiconductor substrate, its manufacturing method, and semiconductor optical device using the same
WO2015083553A1 (ja) * 2013-12-05 2015-06-11 日本ピラー工業株式会社 流体機器
JP7640273B2 (ja) * 2021-02-04 2025-03-05 古河電気工業株式会社 光半導体装置および光半導体装置の製造方法

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