JP2001093145A - Bombardment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bombardment device in which a bombardment processing condition to a film forming body can be easily and finely adjusted. SOLUTION: This bombardment device 30 of a multiple structure is provided with an electrode cover 31 and an exterior cover 32 for covering the electrode cover 31 from the outside. The exterior cover 32 is provided with a pair of traveling holes 33a and 34a and traveling flanges 33 and 34 around them, both of the electrode cover 31 and the exterior cover 32 are communicated by a gas supply pipe 35. A magnet electrode 36 is arranged inside the electrode cover 31, the magnet electrode and the electrode cover are electrically connected and an AC voltage is applied. A slit 37 having a prescribed width is provided on the position facing the gas supply pipe 35 of the electrode cover 31 and the film forming body 13 made to travel between the pair of the traveling holes 33a and 34a is bombardment-processed through the slit 37.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bombard apparatus.

[0002]

2. Description of the Related Art In the field of video tape recorders and the like, there is a strong demand for higher density magnetic materials in order to achieve higher image quality. On the other hand, metal or C
A magnetic material made of an alloy such as oNi is directly deposited on a magnetic support such as a polyethylene terephthalate film by various vacuum thin film forming techniques such as a vacuum evaporation method, a sputtering method, and an ion plating method to form a magnetic layer. A so-called metal magnetic thin film type magnetic recording medium to be formed is widely applied.

[0003] Such a metal magnetic thin film type magnetic recording medium is not only excellent in coercive force, squareness ratio, and electromagnetic conversion characteristics in a short wavelength region, but also enables the magnetic layer to be thinned and is filled with a magnetic material. It has many advantages, such as higher density. Further, in order to improve the electromagnetic conversion characteristics of such a metal magnetic thin film type magnetic recording medium and to obtain a larger output, when forming the magnetic layer, the magnetic layer is obliquely deposited. A so-called oblique deposition method has been put to practical use.

For example, a vapor-deposited tape on which a magnetic layer is formed by such a vacuum vapor-deposition method has already been manufactured using a high-eight 8 mm cassette (Hi) due to high production efficiency and stable magnetic characteristics.
8ME) and digital microtape (NT tape).

In order to further increase the recording density in the future, the surface of the metal magnetic thin film type magnetic recording medium tends to be smoothed for the purpose of reducing the spacing loss. However, the smoothing of the surface of such a metal magnetic thin film type magnetic recording medium increases the frictional force between the magnetic head and the magnetic recording medium, and increases the shear stress applied to the magnetic recording medium. In general, a protective film is formed on the surface of the magnetic layer in order to improve dynamic durability.

As such a protective film formed on the surface of the magnetic layer, a carbon, quartz (SiO ₂ ) film, a zirconia film (ZrO ₂ ) film or the like is applied. Especially recently,
As a carbon protective film, a diamond-like carbon (DLC) film, which is a film having higher hardness, has also been put into practical use. This diamond-like carbon (DL
C) The film can be formed by a chemical vapor deposition (CVD) method or a physical vapor deposition (PVD) method such as a sputtering method.

In the sputtering method, first, an inert gas such as an Ar gas is ionized (plasmaized) using an electric field or a magnetic field, and further, the ionized Ar ions are accelerated, and their kinetic energy is increased. The target atoms are repelled by the above, and the repelled atoms are deposited on the facing film forming body to form a target film. The formation rate of the diamond-like carbon film by this sputtering method is generally slow, and the productivity is inferior from an industrial point of view.

On the other hand, the chemical vapor deposition (CV)
The method D) is a method of forming a film by causing a chemical reaction such as decomposition or synthesis of a raw material gas by using energy of plasma generated by using an electric or magnetic field. By the method described above, the durability against sliding is significantly improved by forming the carbon protective film formed on the magnetic layer.

Hereinafter, as an example of forming a film on a film forming body, an example of an apparatus for forming a magnetic layer on a non-magnetic support will be described together with its film forming process.

FIG. 12 is a schematic diagram showing an example of a conventional metal magnetic thin film type magnetic recording medium vapor deposition apparatus 111. A deposition apparatus 111 shown in FIG. 12 includes a supply roll 114 for supplying a long film-formed body, in this case, a nonmagnetic support 113 such as polyethylene terephthalate, and a winding roll 115, It comprises a cooling can 116 for supporting and guiding the support 113, an evaporation source 117 for supplying a metal magnetic material 119, and the like.

The non-magnetic support 113 includes a supply roll 114
And is guided and transported along a cooling can 116 to be taken up by a take-up roll 115. At this time, the nonmagnetic support 113 supplied from the supply roll 114 is bombarded by the bombarding device 123 and runs in close contact with the surface of the cooling can 116.

[0012] The vapor deposition source 117 has a metallic magnetic material 119, for example, a cobalt lump disposed in a crucible 118.
The metal magnetic material 119 is heated and melted by the electron beam 121 from the electron gun 120 to be deposited.
122 is an oxygen gas introduction pipe for introducing oxygen gas, 1
24 is a guide roll.

As described above, on the non-magnetic support 113,
When forming a vapor-deposited film, or even when forming a protective film such as a diamond-like carbon film on this vapor-deposited film, in order to prevent damage to the film-formed body due to heat,
The film is formed in a state where the film forming body is brought into close contact with the cooling can and allowed to run.

[0014]

However, FIG.
When the cooling can 116 for guiding and transporting the non-magnetic support 113 as shown in (1) and the non-magnetic support 113 have poor adhesion, when the magnetic layer is formed on the non-magnetic support 113, the cooling effect is sufficient. Therefore, unevenness such as heat loss occurs as in the case of the magnetic tape 213 shown in FIG. 14, resulting in a shape defect (shape deformation), deterioration of the surface property of the magnetic tape, deterioration of the quality, Yield may be reduced.

On the other hand, if the adhesion between the film-forming member such as the non-magnetic support 113 and the cooling can 116 is too strong, the balance of the guide roll 124 and the surface shape of the cooling can 116 are not changed. As shown in FIG. 15, wrinkles are generated on the surface of the magnetic tape as reflected on the surface of the film forming body such as the body 113. This is the cooling can 116
Is not strictly flat, but is caused by a slight deformation due to cooling.

In the example shown in FIG. 12, the case where a magnetic film is formed on the non-magnetic support 113 has been described. However, after the magnetic film is formed, a protective film such as diamond-like carbon is formed on the magnetic film. The same can be said for. That is, during the film formation of the film-formed body, heat loss occurs due to insufficient adhesion with the cooling can, resulting in unevenness on the surface, or wrinkles on the surface due to too strong adhesion with the cooling can 116. Or occur.

The surface of the cooling can 116 shown in FIG. 12 is subjected to a surface treatment with metal, plastic, ceramic, or the like, depending on the application. When forming a magnetic film, a protective film, or the like, it is necessary to bring the film forming body into close contact with the cooling can 116 with an appropriate strength.

The surface properties of the cooling can 116, the conditions of tension applied to the film-formed body, the shape accuracy of the cooling can 116, and the like are factors that affect the adhesion to the film-formed body. Formed body and cooling can 116
In order to improve running adhesion during film formation with
A method of bombarding the film formed body in advance is used.

That is, as shown in FIG. 12, a bombardment device 123 is installed in the middle of the supply roll 114 and the cooling can 116, and the film forming body is forcibly charged by adjusting the gas flow rate and the current value. On the other hand, the amount of charge of the film forming body such as the non-magnetic support 113 was made uniform by reducing the amount of charge, thereby adjusting the adhesion to the cooling can 116.

FIG. 16 is a schematic structural view of a conventional bombardment device 123. The bombard device 123 has a magnet electrode 236 disposed inside an exterior cover 232. In the exterior cover 232, a pair of traveling holes 233 and 234 for allowing the film forming body, for example, the non-magnetic support body 113 to penetrate the exterior cover 232 and travel, are opposed to each other at left and right positions of the exterior cover. Position. The pair of traveling holes 233 and 234 are arranged at positions corresponding to the entrance and exit of the nonmagnetic support 113.

In the bombarding apparatus 123 shown in FIG. 16, a gas supply pipe 235 for supplying a bombard gas such as Ar, for example, is provided through the outer cover 232, and the bombard gas is supplied from the gas supply pipe 235. For example, 50 [cc / mi]
n].

Further, as described above, in the bombardment device 123 of FIG. 16, the magnet electrode 236 is disposed inside the outer cover 232. This magnet electrode 23
6 has one or more pipe shapes made of, for example, SUS, and has a configuration in which a ring-shaped magnet is embedded in the pipe internal space.

The magnet electrode 236 and the outer cover 232 are electrically connected to each other, and an AC voltage of a predetermined frequency is applied by an AC power supply (not shown). In this space, a discharge region is formed. In particular, a strong discharge region is formed in a region surrounded by a broken line around the magnet electrode 236 in FIG. It is assumed that the set current of the magnet electrode 236 is about 0.3 [A].

The bombardment device 12 having the above-described configuration
3, the nonmagnetic support 113 is caused to travel in the direction of the arrow between the travel holes in FIG. Thereby, the adhesion between the nonmagnetic support 113 and the cooling can is improved.

Further, in the example described with reference to FIGS. 12 and 16, the case where the nonmagnetic support 113 is subjected to the bombardment treatment in the film forming step of forming the magnetic layer on the nonmagnetic support has been described. Conventionally, the present invention is not limited to this example, and is similarly applied to a case where a magnetic layer is formed on a non-magnetic support and then a protective film such as diamond-like carbon is formed on the magnetic layer. You.

However, recently, the production conditions of the film-formed body have been diversified, and it is necessary to precisely and appropriately adjust the adhesion to the cooling can in each case by performing a bombarding treatment according to various conditions. It is becoming.

That is, the material of the non-magnetic support also varies depending on the use of each product, for example, polyethylene terephthalate, polyimide, polyamide, etc., so that in each case, appropriate adhesion to the cooling can is ensured. The optimal charge state changes. In order to properly adjust the adhesion with the cooling can in accordance with the respective conditions, there is a problem that the conventional bombarding apparatus cannot sufficiently cope with the problem. It is becoming difficult to completely avoid wrinkles and unevenness. That is, in a bombardment apparatus, more precise control of a gas flow rate and a current value and adjustment according to individual cases are required.

In addition, the optimum conditions for bombarding the film-formed body differ depending on the apparatus configuration and the like of the vapor deposition apparatus, the sputtering apparatus, and the CVD apparatus. Precise control for optimizing is required.

In view of the above, the present invention provides a bombarding apparatus which can be applied to various kinds of film forming bodies and all kinds of film forming apparatuses and which can easily and precisely control the conditions of bombarding.

[0030]

The bombard apparatus of the present invention is a multi-layer bombard apparatus having an electrode cover and an outer cover for covering the electrode cover from the outside. In the exterior cover, the coating formed body is penetrated through the exterior cover, and a traveling brim is provided in a pair of traveling holes for traveling,
Also, by communicating both the electrode cover and the exterior cover,
A gas supply pipe for supplying a bombard gas is provided in the electrode cover. It is assumed that a magnet electrode is arranged in the electrode cover. It is assumed that the magnet electrode and the electrode cover are electrically connected to each other, a predetermined AC voltage is applied thereto, and the current value is set to a desired value. A discharge region is formed between the magnet electrode and the electrode cover. In particular, a discharge region that is stronger around the magnet electrode is formed as compared to the periphery. In the electrode cover, a slit having a predetermined width is formed at a position facing the gas supply pipe, and through this slit, the film forming body traveling between the pair of traveling holes is bombarded. ing.

According to the bombarding apparatus of the present invention, the conditions of the bombarding process can be easily and precisely controlled corresponding to various film forming bodies and all kinds of film forming apparatuses.

[0032]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a bombarding apparatus for performing a bombarding process on a film-formed body in a state where the film-formed body has been transferred. The bombardment device of the present invention has a multi-layer structure including an electrode cover and an exterior cover that covers the electrode cover from the outside. The exterior cover is provided with a pair of traveling holes through which the film-formed body penetrates and travels in the exterior cover, and a traveling collar is formed around the traveling holes. A gas supply pipe is provided for communicating both the electrode cover and the exterior cover and supplying a bombard gas such as Ar into the electrode cover. Further, a magnet electrode is disposed in the electrode cover, and a discharge region is formed in a space between the magnet electrode and the electrode cover. The electrode cover has a predetermined width at a position facing the bombard gas supply pipe, and a slit that can change the width is formed. A bombarding process is performed on a film forming body traveling in a bombarding apparatus.

Hereinafter, the bombard apparatus of the present invention will be described.
Although an example will be described, the present invention is not limited to the example described below, and may be configured in combination with any conventionally known configuration.

In the following, as an example of the case of forming a film on the film forming body, for example, in the case of forming a magnetic layer on a long non-magnetic support, together with the vapor deposition apparatus and the film forming process, An example of the bombarding apparatus of the present invention for bombarding a film-formed body will be described. However, the bombarding apparatus of the present invention is not limited to a vapor deposition apparatus shown in the following examples, and may be any conventionally known film forming apparatus such as sputtering or CVD. Can also be handled.

FIG. 1 is a schematic view showing an example of a metal magnetic thin film type magnetic recording medium vapor deposition apparatus 11 in which a bombard apparatus 30 of the present invention is arranged.

The vapor deposition apparatus 11 shown in FIG. 1 supports and guides a long non-magnetic support 13, for example, a supply roll 14 for supplying a polyethylene terephthalate film, a take-up roll 15, and a non-magnetic support 13 into a vapor deposition chamber 12. And a vapor deposition source 17 and the like.

The non-magnetic support 13 is sent out from the supply roll 14 and guided and transferred along a cooling can 16 cooled to, for example, about -20 ° C.
It is made to be wound up.

A bombarding device 30 of the present invention for bombarding the non-magnetic support 13 is provided between the supply roll 14 and the cooling can 16. The non-magnetic support 13 supplied from the supply roll 14 is
The bombarding process is performed to bring the cooling can 16 into close contact with the surface of the cooling can 16.

The vapor deposition source 17 has a configuration in which a metallic magnetic material 19, for example, a cobalt lump, is disposed in a crucible 18. The metallic magnetic material 19 is heated and melted by an electron beam 21 from an electron gun 20 to vapor-deposit. It has been made like that. 22 is
An oxygen gas introduction pipe for introducing oxygen gas to the surface of the nonmagnetic support 13, and 24 is a guide roll.

The bombarding apparatus 30 of the present invention for bombarding the nonmagnetic support 13 shown in FIG. 1 will be described below with reference to the drawings.

FIG. 2 shows a schematic side view of an example of the bombarding apparatus 30 of the present invention, and FIG. 3 shows a schematic plan view of the bombarding apparatus 30 of the present invention. Bombard device 3 of the present invention
Reference numeral 0 denotes a multi-layered bombardment device having an electrode cover 31 and an exterior cover 32 that covers the electrode cover 31 from the outside.

The exterior cover 32 has a pair of traveling holes 33a and 34a for allowing the film forming body to be bombarded, in this example, the nonmagnetic support 13 to pass through the exterior cover 32 and travel. It is provided in the position where it does. It is assumed that traveling flanges 33 and 34 are provided around the traveling holes 33a and 34a, respectively. The traveling holes 33a and 34a are arranged at positions corresponding to the entrance and exit of the exterior cover 32 of the bombardment device through which the nonmagnetic support 13 penetrates. The traveling collars 33 and 34 provided in the traveling holes 33a and 34a, respectively.
Has a predetermined width d.
The width d from the surface of the main body 2 to the tip of the traveling collars 33, 34 can be set to 10 to 30 [mm].

The outer cover 3 of the traveling collars 33, 34
The width d from the surface of No. 2 to its tip is particularly 10 [m
m] or more, it is possible to effectively prevent the gas in the bombard device 30 from leaking to the outside.
In particular, when the thickness is set to 30 [mm] or less, it is possible to avoid making it difficult to insert the nonmagnetic support 13 into the traveling collars 33 and 34.

The upper and lower opening distances h of the traveling collars 33 and 34 shown in FIG. 2 are so small that they do not come into contact with the non-magnetic support 13, that is, do not deteriorate the running performance of the non-magnetic support 13. It is desirable to form it in such a size that gas leakage inside is prevented.
[Mm].

As described above, the width d of the running collars 33 and 34 and the distance h between the upper and lower openings are determined so that the stable running of the nonmagnetic support 13 is maintained and gas leakage inside the apparatus can be avoided. 2 can avoid a decrease in the degree of vacuum inside the bombardment device 30 shown in FIG. 2, can effectively prevent the occurrence of abnormal discharge, and can provide a finally obtained magnetic recording medium. Quality can be improved.

Further, as shown in a schematic plan view of the bombarding apparatus shown in FIG.
The width W of 7 is set to a length corresponding to the lateral width of the film forming body, that is, the non-magnetic support 13, whereby the non-magnetic support 13 is evenly bombarded over the entire width.

Further, the bombard apparatus 30 of the present invention communicates both the electrode cover 31 and the outer cover 32 with each other.
A gas supply pipe 35 for supplying a predetermined amount of a bombard gas, such as Ar, is provided in the electrode cover 31. The gas supply amount from the gas supply pipe 35 is controlled such that the gas amount supplied from the slit 37 provided in the electrode cover 31 is, for example, about 30 [cc / min].

The bombard apparatus 30 of the present invention shown in FIG.
Has a double structure of the exterior cover 32 and the electrode cover 31, so that the bombard gas can be prevented from being diffused widely inside the exterior cover as in the conventional device, and the supply amount of the bombard gas can be reduced. As compared with the conventional bombard apparatus, a sufficient effect can be obtained with a small amount.

As shown in FIG. 2, the bombardment device 30 of the present invention has a magnet electrode 36 disposed inside an electrode cover 31. The magnet electrode 36 has one or more pipe-like shapes made of, for example, SUS, and a ring-shaped magnet is embedded in the internal space of the pipe. The magnetic field of the magnet electrode 36 can be, for example, 1500 to 3500 [GAUSS].

The magnet electrode 36 and the electrode cover 3
1 is electrically connected as shown in the schematic plan view of the bombardment apparatus of the present invention in FIG. 3, and an AC voltage of, for example, 3.5 [MHz] is applied by an AC power supply 40 to the magnet electrode. A discharge region is formed in a space between the electrode 36 and the electrode cover 31. A particularly strong discharge region is formed in a region surrounded by a broken line around the magnet electrode 35 in FIGS. 2 and 3.

The magnet electrode 36 shown in FIG. 2 can be moved up and down together with the electrode cover 31 or separately from the electrode cover 31, whereby the distance between the magnet electrode 36 and the nonmagnetic support 13 can be increased. Can be freely adjusted and controlled. in this way,
By allowing the distance between the magnet electrode 36 and the non-magnetic support 13 to be freely adjusted, the amount of charge of the non-magnetic support 13 can be reduced to the intended use of the magnetic recording medium, It can be precisely controlled according to different conditions in various cases such as the material and state of the nonmagnetic support.

Further, in the bombarding apparatus 30 of the present invention, the bottom of the electrode cover 31, that is, the gas supply pipe 35.
A slit 37 having a predetermined width w is formed at a position opposite to the forming side, and through this slit 37,
Although the non-magnetic support 13 traveling below is bombarded, the opening width w of the slit 37 can be adjusted and changed as appropriate, whereby the optimum bombard condition can be controlled.

As described above, the bombard device of the present invention has a double structure having the electrode cover 31 and the outer cover 32, so that the bombard gas can be prevented from diffusing inside the device. A high bombard effect can be obtained with a small amount of bombard gas compared to a bombard device having a conventional structure.

In the bombarding apparatus of the present invention, a running collar is provided in a running hole for running a film forming body, for example, a non-magnetic support, and has a width d and a vertical opening interval h.
Can be adjusted or specified numerically, thereby effectively preventing gas leakage inside the apparatus while maintaining stable running performance of the film-formed body.

Further, since the slit 37 is provided on the electrode cover on the side facing the film forming body and the opening width w can be adjusted to be wide and narrow, the influence of the discharge on the film forming body is reduced. Fine adjustment could be made easily and reliably.

Next, the structure of another example of the bombarding apparatus of the present invention will be described with reference to the drawings.

In the example shown in FIG.
Although the case where one magnet electrode 36 is arranged in 1 is shown, the bombardment device of the present invention is not limited to this example, and may have a configuration in which a plurality of magnet electrodes are arranged. In FIG. 4, in the electrode cover 31,
For example, a schematic diagram of a bombard device in which two magnet electrodes 41 and 42 are arranged is shown.

In the bombard apparatus shown in FIG.
A first magnet electrode 41 and a second magnet electrode 4
Two magnet electrodes 2 are arranged in the electrode cover 31.

In the bombardment apparatus shown in FIG. 4, two magnet electrodes 41 are provided inside the electrode cover 31.
Although there is a configuration in which 42 is arranged, the other configuration is common to the bombardment device 30 shown in FIG. 2 and redundant description is omitted.

The first magnet electrode 41 and the second magnet electrode 42 shown in FIG. 4 are electrically connected to each other so that an AC power supply 40 can apply an AC voltage having a frequency of, for example, 3.5 [MHz]. I have. As a result, a strong discharge region is formed in a region surrounded by a broken line around the first and second magnet electrodes 41 and 42.
In the bombard apparatus shown in FIG.
The surface of the non-magnetic support body 13 that runs through between Nos.
Bombard processing is performed through the slit 37 of the electrode cover 31.

In the above example, the non-magnetic support is
In the film forming step of forming the magnetic layer, the case where bombarding is performed has been described, but the bombarding device of the present invention is not limited to this example, and a protective film of, for example, diamond-like carbon is formed on the magnetic layer. The same can be applied to the case of performing. Hereinafter, this example will be described with reference to the drawings.

FIG. 5 is a schematic configuration diagram of a main part of a plasma CVD (chemical vapor deposition) continuous film forming apparatus used for forming a diamond-like carbon protective film after forming a magnetic layer. As shown in FIG. 5, in this apparatus, a feed roll 53 and a take-up roll 54 are provided in a vacuum chamber 61 which is evacuated from an exhaust system 50 and the inside of which is in a vacuum state. Rolls of a metal magnetic thin film adhered to a tape-shaped non-magnetic support under an oxygen gas atmosphere (hereinafter referred to as
(Former film-formed body) are sequentially driven.

While the film forming body 51 travels from the feed roll 53 to the take-up roll 54, a cylindrical rotatable counter electrode 59 is provided. In addition, feed roll 5
The bombardment device 30 of the present invention shown in FIGS. 2 and 4 is arranged in the middle of the counter electrode 3 and the counter electrode 59.
The bombardment treatment of the film forming body 51 is performed.

The film forming body 51 is sequentially sent out from the feeding roll 53, passes through the peripheral surface of the counter electrode 59, and is wound up by the winding roll 54. Guide rolls 52 are arranged between the feed roll 53 and the counter electrode 59 and between the counter electrode 59 and the take-up roll 54, respectively. 51 is designed to run smoothly.

Further, a reaction tube 55 is provided in the vacuum chamber 61, and an electrode 56 is incorporated in the reaction tube 55. In addition, a DC power supply 57 applies a voltage to this electrode 56.
A potential of + 500-2000 V is applied.

A gas containing a hydrocarbon-based gas as a main component is introduced into the reaction tube 55 from a discharge gas inlet 58. The film forming body 51 is sent out from the feed roll 53, passes through the peripheral surface of the counter electrode 59, and in the reaction tube 55, a protective film of diamond-like carbon is formed on the surface thereof to a predetermined thickness.

Next, using the CVD apparatus shown in FIG.
When a diamond-like carbon film is formed as a protective film on the surface of the magnetic layer, the film forming body 51 is bombarded by the bombarding apparatus 30 shown in FIG. 2 [Examples 1 to 11], When the bombarding process is performed by the bombarding apparatus shown in FIG. 16 (Comparative Example), the bombarding conditions include the opening width w of the slit 37, the distance between the magnet electrode 36 and the film forming body 13, and the width d of the running collars 33 and 34. When the upper and lower opening distances h, the minimum current value, and the argon gas flow rate of the running collars 33 and 34 are changed, the wrinkle defect rate [%], the unevenness occurrence status (yes, no ), The number of abnormal discharges [number / 1000 m] were measured and compared. In this case, the wrinkle defect rate is obtained by dividing the entire area of the tape by B
Assuming that the area of the wrinkled portion is A, (A /
B) It was determined by × 100. The results are shown below (Table 1).

[0068]

[Table 1]

As is clear from Table 1, like the bombardment apparatus of the present invention shown in FIG. 2 applied in [Embodiment 1] to [Embodiment 11], it is constituted by the outer cover 32 and the electrode cover 31. In the multi-layered bombardment apparatus, a slit is provided in the electrode cover 31 and the bombardment process is performed through the slit. Therefore, a conventional bombardment apparatus having a so-called single-layer structure without a slit is used (Table 1). In comparison with the comparative example, the diffusion of argon gas in the apparatus can be effectively avoided, so that abnormal discharge can be effectively avoided, thereby reducing the flow rate of argon gas used. It became clear that we could do it.

The slit width w of the electrode cover 31 is
By making it larger than 1 [mm], the bombarding treatment can be effectively performed, so that it is possible to prevent heat loss of the film-formed body (tape) and to avoid the occurrence of unevenness of the magnetic tape. .

Further, a running collar is provided in a pair of running holes for running the film-formed body, and the width d is set to 10 to 30 [mm].
By setting the distance h between the upper and lower openings of the running brim to 2 to 5 [mm], it is possible to realize appropriate adhesion between the tape and the cooling can, and it is apparent that the wrinkle defect rate is good. became. In particular, the number of abnormal discharges can be remarkably reduced by reducing the distance h between the top and bottom of the running brim, and it is important to specify this numerically in order to improve the quality of the tape. Was revealed.

Next, in the bombard apparatus 30 of the present invention shown in FIG.
[Mm] and the wrinkle defect rate [%] of the magnetic tape (indicated by a circle in the figure), and the wrinkle defect rate when the conventional bombarding apparatus shown in FIG. 16 is applied (□ in the figure).
Mark) is shown in FIG. As shown in FIG. 6, by controlling the slit width w to be narrow, the wrinkle defect rate can be improved. Further, it has been clarified that the wrinkle defect rate of the magnetic tape is remarkably improved according to the bombard apparatus of the present invention, as compared with the bombard apparatus having the conventional structure.

Next, in the bombardment apparatus 30 of the present invention shown in FIG. 2, the distance between the magnet electrode 36 and the film forming body 13, that is, the tape, is 65 [mm], 80 [mm],
FIG. 7 shows the relationship with the wrinkle defect rate when the value was set to 120 [mm] (in the figure, marked with a circle). In the case where the conventional bombarding apparatus shown in FIG. 16 is applied, the distance between the magnet electrode 36 and the film forming body 13, that is, the tape is set to 80.
The relationship with the wrinkle defect rate when [mm] is set is shown (indicated by □ in the figure). As shown in FIG. 7, when the bombarding process is performed using the bombarding apparatus of the present invention, the wrinkle defect rate can be set to a low value in any case. This has revealed that the degree of freedom in controlling the bombarding conditions by adjusting the distance between the magnet electrode and the tape to various values is remarkably improved.

Next, in FIG. 8, in the bombardment apparatus 30 of the present invention shown in FIG. 2, when the width d of the traveling collars 33, 34 is changed between 0 and 30 [mm], When the opening distance h is 3 [mm]
The relationship between the number of arcs (number of arcs / 1000 m) when 6 mm was used (indicated by Δ in the figure) and 6 mm was shown. According to FIG. 8, the vertical interval h of the traveling brim is 5 mm
In the following, it was clarified that the number of arcs could be reduced because the leakage of bombard gas could be avoided.
The width d of the traveling collars 33 and 34 is 10 to 30 [m
m], the number of arcs can be suppressed to a low value.

Next, FIG. 9 shows the relationship between the bombardment current [A] and the wrinkle occurrence rate [%] of the tape.
At this time, the bombard current was controlled by adjusting the slit width w in the bombard apparatus 30 of the present invention shown in FIG. According to FIG. 9, when the bombardment current value is reduced, the adhesion between the film forming body 13 and the cooling can is weakened, so that the wrinkle generation rate can be suppressed to be low. That is, according to the bombarding apparatus 30 of the present invention, the bombarding current value can be controlled by adjusting the slit width w, whereby the wrinkle generation rate can be controlled.

Next, FIG. 10 shows the Ar gas flow rate [c] when bombarding is performed by the bombarding apparatus 30 of the present invention.
c / min] and a bombardment current value [A]. At this time, the Ar gas flow rate was controlled by adjusting the slit width w. As shown in FIG.
The gas flow rate and the bombardment current value have a correlation. That is, when the gas flow rate increases, a stable discharge cannot be obtained unless the current value is increased. Since the bombard device 30 of the present invention has a so-called multiplex structure, A
The diffusion of r gas can be effectively avoided, a stable discharge can be obtained, and the control of the set bombardment current value can be simplified.

FIG. 11 shows the relationship between the slit width w of the bombardment apparatus 30 of the present invention and the flow rate of Ar gas [cc / min]. As shown in FIG. 11, if the slit width w is increased, the Ar gas flow rate also needs to be increased. Thus, if the slit width w is set to a certain value, the optimal Ar gas flow rate can be determined, and stable discharge control is simplified.

[0078]

According to the bombardment apparatus of the present invention, it is possible to easily and precisely adjust the charge amount for a non-magnetic support or a film forming body such as a vapor deposition tape. As a result, cooling can and film formation such as unevenness due to heat loss of the film formed body and generation of wrinkles, which are problems common to various winding type vacuum thin film forming apparatuses such as a vacuum evaporation apparatus, CVD, sputtering, etc. Shape defects due to adhesion to the body could be effectively prevented.

Further, the bombardment device of the present invention can adjust the distance between the magnet electrode and the film-forming body in a distance, so that the influence of the discharge on the film-forming body can be controlled simply and precisely. Was completed.

In the bombarding apparatus of the present invention, the double structure having the electrode cover 31 and the exterior cover 32 can effectively prevent the bombard gas from diffusing, thereby effectively preventing abnormal discharge. Thus, a high bombard effect can be obtained with a small amount of bombard gas as compared with a conventional bombard device.

Further, in the bombarding apparatus of the present invention, a running brim for running a film-forming body, for example, a non-magnetic support, is provided, and the width d, the upper and lower opening intervals h, or both of them are numerically determined. By maintaining the stable running property of the film forming body, it is possible to effectively avoid gas leakage inside the device, obtain a stable discharge, and improve the quality of the magnetic tape. Was completed.

Further, the bombardment apparatus of the present invention has a configuration in which a slit 37 is provided on the side of the electrode cover 31 facing the film forming body 13, and the opening width of the slit 37 can be adjusted to be wide and narrow. As a result, the influence of the discharge on the film forming body 13 can be easily and precisely controlled.

According to the bombarding apparatus of the present invention, the fine adjustment of the influence of the discharge on the film forming body 13 can be easily performed. Irregularities due to heat loss and generation of wrinkles can be effectively avoided, the product yield can be improved by about 27%, and the productivity can be improved.

[0084]

[Brief description of the drawings]

FIG. 1 shows a schematic configuration diagram of a vapor deposition apparatus.

FIG. 2 shows a schematic configuration diagram of an example of a bombardment device of the present invention.

FIG. 3 shows a schematic plan view of an example of a bombardment device of the present invention.

FIG. 4 is a schematic configuration diagram of another example of the bombardment device of the present invention.

FIG. 5 shows a schematic configuration diagram of a CVD apparatus.

FIG. 6 shows a relationship diagram between a slit width w of the electrode cover and a wrinkle defect rate.

FIG. 7 is a diagram showing a relationship between a distance between a magnet electrode and a tape and a wrinkle defect rate.

FIG. 8 is a diagram showing the relationship between the width d of the running brim and the number of arcs generated.

FIG. 9 shows a relationship diagram between a bombardment current and a wrinkle generation rate.

FIG. 10 shows a relationship diagram between the Ar gas flow rate and the bombardment current.

FIG. 11 shows a relationship diagram between a slit width W and an optimum Ar gas flow rate.

FIG. 12 shows a schematic configuration diagram of an example of a conventional vapor deposition apparatus.

FIG. 13 shows a schematic view of a long non-magnetic support.

FIG. 14 is a schematic perspective view of a main part of a conventional vapor deposition apparatus.

FIG. 15 is a schematic perspective view of a main part of a conventional vapor deposition apparatus.

FIG. 16 shows a schematic configuration diagram of an example of a conventional bombard device.

[Explanation of symbols]

11 evaporation apparatus, 12 evaporation chamber, 13 non-magnetic support,
Reference Signs List 14 supply roll, 15 take-up roll, 16 cooling can, 17 evaporation source, 18 crucible, 19 metal magnetic material, 20 electron gun, 21 electron beam, 22 oxygen gas introduction tube, 24 guide roll, 30 bombard device, 31
Electrode cover, 32 Exterior cover, 33, 34 Running collar, 33a, 34a Running hole, 35 Gas supply pipe, 36
Magnet electrode, 37 slit, 40 power supply, 41
A first magnet electrode, 42 a second magnet electrode,
Reference Signs List 50 exhaust system, 51 film forming body, 52 guide roll, 53 feed roll, 54 take-up roll, 55
Reaction tube, 56 electrodes, 57 power supply, 58 discharge gas inlet, 59 counter electrode, 61 vacuum chamber, 111 vapor deposition device, 112 vapor deposition chamber, 113 non-magnetic support, 114
Supply roll, 115 take-up roll, 116 cooling can, 117 evaporation source, 118 crucible, 119 metal magnetic material, 120 electron gun, 121 electron beam, 122 oxygen gas inlet tube, 123 bombard device, 213 magnetic tape, 232 exterior cover, 233 running hole, 234
Running hole, 235 gas supply pipe, 236 magnet electrode

Claims (6)

[Claims] 1. A bombarding apparatus for performing a bombarding process on a film-formed body in a state where the film-formed body has been transferred, comprising: an electrode cover; An outer cover having a space therein, wherein the outer cover has a running brim formed around a pair of running holes for allowing the film forming body to pass through the outer cover and run. An electrode cover communicates with both of the exterior cover, and has a gas supply pipe for supplying a bombard gas in the electrode cover. In the electrode cover, a magnet electrode is disposed, A discharge region is formed in a space between the electrode and the electrode cover, and a slit capable of changing an opening width is formed at a position of the electrode cover facing the gas supply pipe. Is to become, through the slit, bombardment apparatus characterized by being adapted to bombardment treatment to the film forming body which travels between the running hole of the pair. 2. The bombardment apparatus according to claim 1, wherein a distance between the magnet electrode and the film forming body can be adjusted. 3. The magnetic field of the magnet electrode is 1500
The bombard apparatus according to claim 1, wherein the pressure is from 3 to 3500 Gauss. 4. The bombard apparatus according to claim 1, wherein two or more magnet electrodes are arranged. 5. The bombard apparatus according to claim 1, wherein the width of the traveling collar is 10 to 30 mm. 6. An interval between upper and lower openings of the traveling collar is 2 to 5.
The bombard apparatus according to claim 1, wherein the diameter is set to mm.