JP2001081138A - Acid sensitive resin, resin composition for active energy ray comprising the acid sensitive resin and method for forming pattern using the same - Google Patents

Acid sensitive resin, resin composition for active energy ray comprising the acid sensitive resin and method for forming pattern using the same

Info

Publication number
JP2001081138A
JP2001081138A JP26394399A JP26394399A JP2001081138A JP 2001081138 A JP2001081138 A JP 2001081138A JP 26394399 A JP26394399 A JP 26394399A JP 26394399 A JP26394399 A JP 26394399A JP 2001081138 A JP2001081138 A JP 2001081138A
Authority
JP
Japan
Prior art keywords
acid
active energy
resin
sensitive resin
energy ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26394399A
Other languages
Japanese (ja)
Other versions
JP2001081138A5 (en
Inventor
Kunihiro Ichimura
國宏 市村
Koji Arimitsu
晃二 有光
Sanuku Paku
サンウク パク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Organic Chemical Industry Co Ltd
Original Assignee
Osaka Organic Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Organic Chemical Industry Co Ltd filed Critical Osaka Organic Chemical Industry Co Ltd
Priority to JP26394399A priority Critical patent/JP2001081138A/en
Publication of JP2001081138A publication Critical patent/JP2001081138A/en
Publication of JP2001081138A5 publication Critical patent/JP2001081138A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an acid sensitive vinyl resin useful as a material for high performance photoresists of a chemical amplification type by bringing a monomer to contain a hydroxybicycloalkanesulfonate residue having acid propagating function for generating acids by the action of the acid in its side chain. SOLUTION: A monomer is brought to contain a 2-hydroxybicycloalkane-1- sulfonate residue having an acid propagating function to generate acids by the action of the acid and expressed by formula I (R1 and R2 are each H or methyl; m+n is 2 and m is 1 or 2) in its side chain. The objective acid sensitive resin is obtained by radically (co)polymerizing the acid propagating monomer expressed by formula II (R3 is nothing or a divalent residue; R4 is H or methyl), (e.g. a monomer expressed by formula III or the like). This resin composition sensitive to active energy rays is obtained by adding an acid generating agent for generating a strong acid by active energy rays and further an acid propagating agent for generating new acids by the action of the acid to the aforesaid resin.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、酸感受性樹脂、酸
感受性樹脂からなる活性エネルギー線用樹脂組成物およ
びそれを用いるパターン形成法に関するものであり、さ
らに詳しくは、酸の作用によって酸を発生する分子団
(以下、酸増殖基と呼ぶ)を結合してなる酸感受性樹脂
およびその製法、ならびに、活性線の作用によって酸を
発生する物質(以下、酸発生剤と呼ぶ)とからなる感活
性エネルギー線樹脂組成物およびそれを用いるパターン
形成法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an acid-sensitive resin, a resin composition for active energy rays comprising the acid-sensitive resin, and a pattern forming method using the same. More specifically, the present invention relates to the generation of an acid by the action of an acid. -Sensitive resin obtained by bonding a molecular group (hereinafter, referred to as an acid-proliferating group) and a process for producing the same, and an activity comprising a substance that generates an acid by the action of an actinic ray (hereinafter, referred to as an acid generator) The present invention relates to an energy ray resin composition and a pattern forming method using the same.

【0002】[0002]

【従来の技術】光、赤外線、電子線、あるいはX線など
の活性エネルギー線に感じる樹脂あるいはその組成物
は、パターン形成材料として用いたり、光や電子線の照
射で引き起こされるモノマーやプレポリマーの硬化を表
面被覆処理に用いるなど、多方面に実用化されている。
活性線のうち、もっとも広く用いられているものが光で
あり、以下、活性線を光に特定し説明するが、本発明の
酸感受性樹脂あるいはその酸感受性樹脂からなる感活性
エネルギー線樹脂組成物は光に限定されるものではな
い。
2. Description of the Related Art A resin or its composition which is sensitive to active energy rays such as light, infrared rays, electron beams or X-rays can be used as a pattern forming material, or a monomer or prepolymer caused by irradiation with light or electron beams. It has been put to practical use in various fields, such as using curing for surface coating treatment.
Among the actinic rays, light is most widely used, and hereinafter, the actinic rays will be specified and described as light. However, the acid-sensitive resin of the present invention or the active-energy ray resin composition comprising the acid-sensitive resin is described below. Is not limited to light.

【0003】これらの樹脂あるいはその組成物における
感光速度、感光波長領域、解像性は多様であり、目的に
応じて適切なこれらの特性が選択され、それに適した感
光性樹脂あるいは組成物が選ばれる。しかし、それぞれ
以下のような本質的な問題点が存在していた。大量、か
つ高解像性を示す感光性材料として、高分子材料を主成
分とする感光性樹脂が広範囲にわたって用いられるよう
になった(山岡亜夫、永松元太郎編、「フォトポリマー
・テクノロジー」、日刊工業新聞社(1988年)参
照)。高分子系感光性材料は解像性に優れているだけで
なく、光反応の選択によって広範囲の感光波長領域が設
定できるし、また、比較的安価に製造できるなどの多く
の利点を有する。一方で、優れた解像性を保ちながら画
像やパターンを形成するに要する時間を短縮し、生産性
を向上させることが望まれている。このためには、高感
度な感光性材料の開発が望まれている。
The photosensitive speed, photosensitive wavelength range, and resolution of these resins or their compositions are various. Appropriate properties are selected according to the purpose, and a suitable photosensitive resin or composition is selected. It is. However, each had the following essential problems. Large-scale and high-resolution photosensitive materials have been used in a wide range of photosensitive resins mainly composed of high-molecular materials (edited by Ao Yamaoka and Mototaro Nagamatsu, "Photopolymer Technology", Nikkan) Kogyo Shimbun (1988)). The polymer-based photosensitive material has not only excellent resolution but also many advantages such that a wide range of photosensitive wavelength can be set by selecting a photoreaction, and it can be manufactured at relatively low cost. On the other hand, it is desired to shorten the time required to form an image or a pattern while maintaining excellent resolution, and to improve productivity. For this purpose, development of a photosensitive material having high sensitivity is desired.

【0004】これまでに、感光性樹脂材料の感光速度を
向上させるために、さまざまな試みがなされてきた。も
っとも広く開発の対象となってきたのが、光の作用で発
生するラジカル種を開始剤として、多数のビニルモノマ
ーを連鎖的に重合させる光重合系である。また、光の作
用で酸を発生させ、この酸を触媒とするカチオン重合系
も活発な開発の対象である。カチオン重合においては、
ラジカル重合とは異なり酸素による反応の停止効果がな
いので高感度が期待されるが、実際には空気中の水分や
網目構造形成のために、むしろラジカル重合系よりも感
光速度は低いのが現状である。
Until now, various attempts have been made to improve the photosensitive speed of a photosensitive resin material. The most widely developed object is a photopolymerization system that uses a radical species generated by the action of light as an initiator to polymerize many vinyl monomers in a chain. In addition, a cationic polymerization system that generates an acid by the action of light and uses the acid as a catalyst is also actively developed. In cationic polymerization,
Unlike radical polymerization, there is no effect of terminating the reaction by oxygen, so high sensitivity is expected.However, due to moisture in the air and network structure formation, the photosensitivity is actually lower than that of radical polymerization. It is.

【0005】一方、光で発生する酸を触媒として利用す
る酸触媒反応を組み込んだ高分子系感光性材料では、光
で酸を発生させた後に加熱処理を施して、高分子物質そ
のもの、あるいは高分子中に溶解分散した低分子物質の
化学変化を誘起させ、その結果生じる溶解性変化を画像
形成に利用する。多様な酸触媒反応が利用できるから、
この種の化学増幅型フォトレジストと呼ばれる感光性樹
脂組成物は広範囲にわたる。さらに、酸触媒反応を含ん
でいるので高感度化が原理的に可能であるが、実際に
は、固体中での拡散による制約のために格段の高感度化
は達成されていない。
On the other hand, in a polymer photosensitive material incorporating an acid-catalyzed reaction utilizing an acid generated by light as a catalyst, a heat treatment is performed after the acid is generated by light, and the polymer substance itself or a high-molecular-weight material is heated. A chemical change of a low-molecular substance dissolved and dispersed in a molecule is induced, and the resulting change in solubility is used for image formation. Because a variety of acid-catalyzed reactions are available,
This type of photosensitive resin composition called a chemically amplified photoresist is widely used. Furthermore, since the reaction involves an acid-catalyzed reaction, it is possible in principle to increase the sensitivity. However, in practice, no remarkable increase in sensitivity has been achieved due to restrictions due to diffusion in a solid.

【0006】化学増幅型フォトレジストの感光速度が酸
触媒反応を利用しているにもかかわらず、それほど高い
ものとならないのみならず、光照射によって発生する酸
が環境に存在する微量な塩基性物質によって中和される
ために、形成されるレリーフパターンの形状が損なわ
れ、実質的に解像性が低下するという問題が指摘されて
いる。このような事態を解決する方法として、この種の
高分子系感光性材料に次のような特性を有する物質を添
加する方法が提案されている(特開平8−248561
号公報)。すなわち、その特性とは、光反応で生成する
酸の触蝶作用によって、酸をみずから発生して自己触媒
的に酸を増殖するものである。このような酸増殖機能を
有する物質をここでは酸増殖剤と呼ぶことにするが、こ
の反応が連鎖的に起これば、酸の発生はねずみ算的に増
えることになる。このような特性を持つ酸増殖剤を添加
すれば、急激に酸が増えるから、塩基性物質による酸触
媒反応の停止も防止できるし、副反応による酸の消失も
防止でき、さらには酸触媒反応を大幅に加速することが
できる。
[0006] Despite the use of an acid-catalyzed reaction, the photosensitivity of a chemically amplified photoresist not only does not become so high, but also the acid generated by light irradiation contains a trace amount of a basic substance present in the environment. It has been pointed out that since the neutralization is carried out, the shape of the formed relief pattern is impaired, and the resolution is substantially reduced. As a method for solving such a situation, there has been proposed a method of adding a substance having the following characteristics to this kind of polymer photosensitive material (Japanese Patent Laid-Open No. Hei 8-248561).
No.). That is, the characteristic is that the acid generated by the photoreaction generates the acid by itself and multiplies the acid autocatalytically. Such a substance having an acid multiplying function will be referred to as an acid multiplying agent here. If this reaction occurs in a chain, the generation of acid will increase in a mouse. If an acid multiplying agent having such properties is added, the acid rapidly increases, so that the stop of the acid catalyzed reaction by the basic substance can be prevented, the disappearance of the acid by the side reaction can be prevented, and further, the acid catalyzed reaction can be prevented. Can be greatly accelerated.

【0007】[0007]

【発明が解決しようとする課題】たしかに、従来の化学
増幅型フォトレジストに酸増殖剤を添加することによっ
て、感度が向上することが報告されているが、一層の高
性能化、高感度化が望まれていた。本発明はこのような
問題の根本的な解決を目指してなされたものである。本
発明の第1の目的は、高性能で、高感度の化学増幅型フ
ォトレジストに用いられる酸感受性樹脂を提供すること
であり、本発明の第2の目的は、この酸感受性樹脂から
なる高性能、高感度の活性エネルギー線用樹脂組成物を
提供することであり、本発明の第3の目的は、この活性
エネルギー線用樹脂組成物を用いるパターン形成法を提
供することである。
It has been reported that the sensitivity can be improved by adding an acid multiplying agent to a conventional chemically amplified photoresist. However, higher performance and higher sensitivity have been reported. Was desired. The present invention has been made with a view to fundamentally solving such a problem. A first object of the present invention is to provide an acid-sensitive resin used for a chemically amplified photoresist having high performance and high sensitivity. A second object of the present invention is to provide a high-sensitivity resin comprising the acid-sensitive resin. It is an object of the present invention to provide a resin composition for an active energy ray having high performance and high sensitivity, and a third object of the present invention is to provide a pattern forming method using the resin composition for an active energy ray.

【0008】[0008]

【課題を解決するための手段】酸増殖剤に触媒量の酸を
添加した溶液中では、酸増殖反応は効率よく進行して酸
の濃度が酸増殖剤に相当する分だけ増加する(K.Ar
imitsu etal.,J.Am.Chem.So
c.,120,37(1998))。しかしながら、樹
脂固体中で酸増殖反応を行わせると、その反応速度は著
しく減じることが明らかとなった。このために、樹脂固
体中での酸分子の拡散挙動が調べられている。その結
果、樹脂固体中では触媒として機能する酸分子の拡散が
大きく抑制されていることが確認されている。すなわ
ち、酸反応性樹脂中を酸が拡散して酸増殖剤に到達する
過程が律速段階になるため、酸増殖反応が十分に誘起さ
れない。したがって、酸増殖反応を固体樹脂中で効率よ
く起こさせるためには、酸増殖剤の濃度をできるだけ高
めることが考えられる。
In a solution obtained by adding a catalytic amount of an acid to an acid multiplying agent, the acid multiplying reaction proceeds efficiently and the acid concentration increases by an amount corresponding to the acid multiplying agent (K. Ar
imitsu et al. , J. et al. Am. Chem. So
c. , 120, 37 (1998)). However, it was found that when the acid growth reaction was carried out in the resin solid, the reaction rate was significantly reduced. For this reason, the diffusion behavior of acid molecules in a resin solid has been investigated. As a result, it has been confirmed that diffusion of acid molecules functioning as a catalyst in the resin solid is greatly suppressed. That is, the process in which the acid diffuses in the acid-reactive resin and reaches the acid multiplying agent is a rate-determining step, and thus the acid multiplying reaction is not sufficiently induced. Therefore, in order to cause the acid multiplication reaction to occur efficiently in the solid resin, it is conceivable to increase the concentration of the acid multiplication agent as much as possible.

【0009】従来の酸増殖剤は低分子量であり、それ自
体では自己支持性がないために、製膜性を有する酸反応
性樹脂に添加する方法が採用されている(持開平8−2
48561号公報)。この方法では、多量に低分子系酸
増殖剤を添加すると製膜性を有する酸反応性樹脂のガラ
ス転移温度が著しく低下するために、添加量には限界が
あることになる。そこで、酸の作用によって酸を発生す
る酸増幅能を持つ分子団、すなわち、酸増殖基を樹脂そ
のものに結合することによって、酸増殖能を保持し、か
つ、それ自体に製膜性が付与できると考えた。本発明は
このような考察に基づいて鋭意研究を重ねた結果完成さ
れたものである。
[0009] Since the conventional acid proliferating agent has a low molecular weight and does not have a self-supporting property by itself, a method of adding it to an acid-reactive resin having film forming properties has been adopted (Kyohei Hei 8-2).
No. 48561). In this method, the glass transition temperature of the acid-reactive resin having a film-forming property is remarkably reduced when a large amount of the low-molecular acid proliferating agent is added, so that the amount added is limited. Therefore, a molecular group having an acid amplifying ability to generate an acid by the action of an acid, that is, an acid amplifying group is bonded to the resin itself, thereby retaining the acid amplifying ability and imparting a film forming property to itself. I thought. The present invention has been completed as a result of intensive studies based on such considerations.

【0010】前記従来技術の課題を解決するための請求
項1の発明は、酸の作用によって酸を発生する酸増殖能
を有する下記の一般式(1)で表される2−ヒドロキシ
ビシクロアルカン−1−スルホネート残基を側鎖に有す
ることを特徴とするビニル系酸感受性樹脂である。
[0010] In order to solve the above-mentioned problems of the prior art, a first aspect of the present invention is to provide a 2-hydroxybicycloalkane represented by the following general formula (1) having the ability to generate an acid by the action of an acid. A vinyl acid-sensitive resin characterized by having a 1-sulfonate residue in a side chain.

【0011】[0011]

【化3】 Embedded image

【0012】(式中、R1 は水素原子またはメチル基、
2 は水素原子またはメチル基、m+nは2であり、m
は1または2を示す)
(Wherein R 1 is a hydrogen atom or a methyl group,
R 2 is a hydrogen atom or a methyl group, m + n is 2, m
Represents 1 or 2)

【0013】請求項2の発明は、請求項1に記載の酸感
受性樹脂において、下記の一般式(2)で表される2−
ヒドロキシビシクロアルカン−1−スルホネート残基を
有するビニル重合性モノマー単位および酸による脱保護
反応によってカルボキシル基を発生するビニル重合性モ
ノマー単位を含有することを特徴とする。
According to a second aspect of the present invention, there is provided the acid-sensitive resin according to the first aspect, wherein the acid-sensitive resin is represented by the following general formula (2):
It is characterized by containing a vinyl polymerizable monomer unit having a hydroxybicycloalkane-1-sulfonate residue and a vinyl polymerizable monomer unit that generates a carboxyl group by a deprotection reaction with an acid.

【0014】[0014]

【化4】 Embedded image

【0015】(式中、R1 は水素原子またはメチル基、
2 は水素原子またはメチル基、R3は何もないか、あ
るいは2価の残基、m+nは2であり、mは1または2
を示す)
(Wherein R 1 is a hydrogen atom or a methyl group,
R 2 is a hydrogen atom or a methyl group, R 3 is nothing or a divalent residue, m + n is 2, m is 1 or 2
Indicates)

【0016】請求項3の発明は、請求項1あるいは請求
項2に記載の酸感受性樹脂と活性エネルギー線によって
酸を発生する物質とからなることを特徴とする感活性エ
ネルギー線樹脂組成物である。
According to a third aspect of the present invention, there is provided an active energy ray resin composition comprising the acid sensitive resin according to the first or second aspect and a substance which generates an acid by an active energy ray. .

【0017】請求項4の発明は、請求項1あるいは請求
項2に記載の酸感受性樹脂、活性エネルギー線によって
酸を発生する物質及び酸の作用によって酸を発生する酸
増殖能を有する酸増殖剤とからなることを特徴とする感
活性エネルギー線樹脂組成物である。
According to a fourth aspect of the present invention, there is provided an acid-sensitive resin according to the first or second aspect, a substance capable of generating an acid by an active energy ray, and an acid proliferating agent capable of generating an acid by the action of an acid. An active energy ray resin composition comprising:

【0018】請求項5の発明は、請求項3あるいは請求
項4に記載の感活性エネルギー線樹脂組成物を用いるこ
とを特徴とするパターン形成法である。
According to a fifth aspect of the present invention, there is provided a pattern forming method using the active energy ray resin composition according to the third or fourth aspect.

【0019】[0019]

【発明の実施の形態】以下本発明を詳細に説明する。本
発明の請求項1に記載の一般式(1)で示される酸増殖
性残基のモデル化合物である、下記の一般式(3)で表
される2−ヒドロキシビシクロアルカン−1−スルホネ
ート類は、酸の存在下でピナコール型転移反応を起こ
し、スルホン酸(Y−SO2 0H)を発生する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. A 2-hydroxybicycloalkane-1-sulfonate represented by the following general formula (3), which is a model compound of the acid-proliferative residue represented by the general formula (1) according to claim 1 of the present invention, comprises: , cause pinacol type transfer reaction in the presence of an acid to generate an acid (Y-SO 2 0H).

【0020】[0020]

【化5】 Embedded image

【0021】(一般式(3)中、R1 、R2 、m、nは
上記一般式(1)のR1 、R2 、m、nと同じであり、
Yはアルキル基、フェニル基、置換フェニル基を示す)
[0021] (Formula (3) in, R 1, R 2, m, n are the same as R 1, R 2, m, n in the general formula (1),
Y represents an alkyl group, a phenyl group, or a substituted phenyl group)

【0022】このスルホン酸(Y−SO2 0H)自体は
2−ヒドロキシビシクロアルカン−1−スルホネート類
の転移反応を引き起こすのに十分な酸強度を持っている
ために、自己触媒的な反応、すなわち、酸増殖反応を超
こす。p−トルエンスルホン酸の不存在下では反応は全
く起こらないが、その存在下では誘導期間を経てから分
解が起こり、その反応の時間変化はシグモイダル曲線と
なり、自己触媒的な反応であることが確認できる。
[0022] In order to have sufficient acid strength to cause transfer reaction of the acid (Y-SO 2 0H) itself hydroxy bicycloalkane-1-sulfonates, autocatalytic reactions, i.e. Excessive acid growth reaction. In the absence of p-toluenesulfonic acid, no reaction occurs, but in the presence, decomposition occurs after an induction period, and the time change of the reaction becomes a sigmoidal curve, confirming that the reaction is autocatalytic. it can.

【0023】本発明の酸感受性樹脂は、酸触媒反応によ
って樹脂にスルホン酸残基が形成されるので、極性溶媒
やアルカリ水溶液中での溶解性が向上する。また、ビシ
クロアルキル基は、一本鎖アルキル基に比較して耐酸素
プラズマエッチング性に優れているという特徴をも合わ
せ持っている。本発明の酸感受性樹脂は、下記の一般式
(4)で表される酸増殖性モノマーのラジカル重合によ
って製造することができる。
In the acid-sensitive resin of the present invention, a sulfonic acid residue is formed on the resin by an acid-catalyzed reaction, so that the solubility in a polar solvent or an alkaline aqueous solution is improved. Further, the bicycloalkyl group also has a feature that it is superior in oxygen plasma etching resistance as compared with a single-chain alkyl group. The acid-sensitive resin of the present invention can be produced by radical polymerization of an acid-proliferating monomer represented by the following general formula (4).

【0024】[0024]

【化6】 Embedded image

【0025】(一般式(4)中のR1 、R2 、R3
m、nは上記一般式(1)および一般式(2)のR1
2 、R3 、m、nと同じであり、R4 は水素原子また
はメチル基を示す)
(In the general formula (4), R 1 , R 2 , R 3 ,
m and n are R 1 in the general formulas (1) and (2),
The same as R 2 , R 3 , m and n, and R 4 represents a hydrogen atom or a methyl group)

【0026】本発明に好適に用いられる酸増殖性モノマ
ーの例を図1に示すが、本発明に用いられる酸増殖性モ
ノマーはこれらに限定されるものではない。これらは、
対応する1,2−ジオールを選択的にモノスルホネート
化することによって製造することができる。
FIG. 1 shows an example of the acid-proliferating monomer suitably used in the present invention, but the acid-proliferating monomer used in the present invention is not limited to these. They are,
It can be produced by selectively monosulfonating the corresponding 1,2-diol.

【0027】本発明の酸感受性樹脂は、上記一般式
(4)で示される酸増殖性モノマーの単独重合のみなら
ず、他のラジカル重合性モノマーとの共重合によって製
造することができる。
The acid-sensitive resin of the present invention can be produced not only by homopolymerization of the acid-proliferating monomer represented by the above formula (4) but also by copolymerization with another radically polymerizable monomer.

【0028】共重合モノマーとしては、親水性モノマー
として、無水マレイン酸、p−ヒドロキシスチレン、ア
クリル酸、メタクリル酸、2−ヒドロキシエチルアクリ
レートあるいは2−ヒドロキシエチルメタクリレートな
ど、疎水性モノマーとしては、アダマンチルアクリレー
ト、アダマンチルメタクリレート、フェニルアクリレー
ト、フエニルメタクリレートなどを用いることができ
る。
The copolymerizable monomers include hydrophilic monomers such as maleic anhydride, p-hydroxystyrene, acrylic acid, methacrylic acid, 2-hydroxyethyl acrylate and 2-hydroxyethyl methacrylate, and the hydrophobic monomers include adamantyl acrylate. , Adamantyl methacrylate, phenyl acrylate, phenyl methacrylate and the like can be used.

【0029】疎水性の大きなモノマーの場合には、上記
一般式(4)で表される酸増殖性モノマーの共重合比を
少なくとも0.3以上に保つ必要がある。共重合比がこ
れ未満であれば、酸による分解後の樹脂が極性溶媒ある
いはアルカリ水溶液への溶解性が著しく減じるために好
ましくない。
In the case of a monomer having a large hydrophobicity, it is necessary to keep the copolymerization ratio of the acid-proliferating monomer represented by the general formula (4) to at least 0.3 or more. If the copolymerization ratio is less than this, the resin after decomposition with an acid is not preferred because the solubility in a polar solvent or an aqueous alkali solution is significantly reduced.

【0030】本発明の請求項2に記載の酸感受性樹脂
は、上記一般式(1)で示される2−ヒドロキシビシク
ロアルカン−1−スルホネート残基を有するビニル重合
性モノマー単位、および、酸による脱保護反応によって
カルボキシル基を発生するビニル重合性酸反応性モノマ
ー単位からなる。本発明に好適に用いられるビニル重合
性酸反応性モノマーとしては、酸触媒的に脱保護反応を
起こす公知のアクリレート、メタクリレート、さらに
は、ラジカル重合性エチレン基を有する多環脂肪族モノ
マーを用いることができる。
The acid-sensitive resin according to the second aspect of the present invention comprises a vinyl polymerizable monomer unit having a 2-hydroxybicycloalkane-1-sulfonate residue represented by the above general formula (1), and a depolymerization by an acid. It comprises a vinyl polymerizable acid-reactive monomer unit that generates a carboxyl group by a protection reaction. As the vinyl polymerizable acid-reactive monomer suitably used in the present invention, a known acrylate or methacrylate which causes an acid-catalyzed deprotection reaction, and further, a polycyclic aliphatic monomer having a radically polymerizable ethylene group may be used. Can be.

【0031】これらのビニル重合性酸反応性モノマーを
図2に例示する。酸増殖性モノマーおよびビニル重合性
酸反応性モノマーの共重合比は0.05〜0.80およ
び0.3〜0.95、より好ましくは0.10〜0.6
0および0.40〜0.90の範囲である。酸増殖性モ
ノマーの共重合性がこれ未満であれば、感活性エネルギ
ー線樹脂としての感度の向上は認められないし、この範
囲を超える共重合比ではそれ以上の高感度化は認められ
ない。
FIG. 2 illustrates these vinyl-polymerizable acid-reactive monomers. The copolymerization ratio of the acid-proliferating monomer and the vinyl polymerizable acid-reactive monomer is 0.05 to 0.80 and 0.3 to 0.95, more preferably 0.10 to 0.6.
0 and ranges from 0.40 to 0.90. If the copolymerizability of the acid-proliferating monomer is less than this, no improvement in sensitivity as an active energy ray resin is observed, and no further increase in sensitivity is observed at a copolymerization ratio exceeding this range.

【0032】また、これらのモノマー以外に無水マレイ
ン酸、アクリル酸、メタクリル酸、などの親水性モノマ
ーを共重合させることもできる。
Further, in addition to these monomers, hydrophilic monomers such as maleic anhydride, acrylic acid and methacrylic acid can be copolymerized.

【0033】本発明の請求項3に記載の感活性エネルギ
ー線樹脂組成物は、以上に述べた酸感受性樹脂に活性エ
ネルギー線の作用によって強酸を発生する酸発生剤を添
加してなるものである。酸発生剤が多く知られている
が、光の作用によって酸を発生する酸発生剤としては、
化学増幅型フォトレジストや光カチオン重合に利用され
る光酸発生剤が用いられる(有機エレクトロニクス材料
研究界編、「イメージング用有機材料」、ぶんしん出版
(1993年)、187〜192頁参照)。
The active energy ray resin composition according to the third aspect of the present invention is obtained by adding an acid generator which generates a strong acid by the action of active energy rays to the above-mentioned acid-sensitive resin. . Although many acid generators are known, as an acid generator that generates an acid by the action of light,
A photo-acid generator used for chemically amplified photoresist and cationic photopolymerization is used (see “Organic Materials for Imaging”, edited by Research Institute for Organic Electronics Materials, Bunshin Publishing (1993), pp. 187-192).

【0034】本発明に好適な化合物の例を以下に挙げ
る。また、これらの光酸発生剤の感光波長領域を拡大す
るために、適宜光増感剤を共存させることもできる。こ
れらの物質の光分解によって生成する酸は、光反応物質
とともに酸増殖剤に作用して酸の発生を促進する。本発
明に用いられる光酸発生剤を図3に例示する。
Examples of compounds suitable for the present invention are shown below. In order to expand the photosensitive wavelength range of these photoacid generators, a photosensitizer can be appropriately used. The acid generated by the photolysis of these substances acts on the acid multiplying agent together with the photoreactive substance to promote the generation of the acid. FIG. 3 illustrates the photoacid generator used in the present invention.

【0035】これらの酸発生剤は酸感受性樹脂100重
量部に対して1重量部から30重量部の範囲、とくに好
ましくは2重量部から15重量部の範囲で混合される。
1重量部未満であれば実用的な感度が得られないし、3
0重量部を超える添加量であれば、酸発生剤自体が樹脂
の溶解性に大きな影響を与えるために、画像形成が困難
となる。
These acid generators are mixed in an amount of 1 to 30 parts by weight, preferably 2 to 15 parts by weight, based on 100 parts by weight of the acid-sensitive resin.
If the amount is less than 1 part by weight, practical sensitivity cannot be obtained and 3
If the addition amount exceeds 0 parts by weight, image formation becomes difficult because the acid generator itself has a great effect on the solubility of the resin.

【0036】本発明の請求項4に記載の感活性エネルギ
ー線樹脂組成物は、以上に述べた酸感受性樹願と活性エ
ネルギー線の作用によって強酸を発生する酸発生剤に、
さらに酸の作用によって新たな酸を発生する酸増殖剤を
添加してなるものである。酸増殖剤の添加によってさら
に酸増殖反応が高まるので、感度が向上する。
The active energy ray-sensitive resin composition according to claim 4 of the present invention comprises an acid generator which generates a strong acid by the action of the above-described acid-sensitive resin and the active energy ray.
Further, an acid proliferating agent which generates a new acid by the action of an acid is added. The addition of the acid proliferating agent further enhances the acid proliferating reaction, thereby improving the sensitivity.

【0037】本発明に好適に用いられる酸増殖剤を図4
に示す。これらの酸増殖剤の添加量は、酸感受性樹脂1
00重量部に対して、1重量部から30重量部、とく
に、2重量部から20重量部が好ましい。1重量部未満
であれば、酸増殖剤の添加による感度向上は見られない
し、30重量部を超えて添加すると組成物被膜のガラス
転移温度が低下して、画像形成に難が生じる。
FIG. 4 shows an acid multiplying agent suitably used in the present invention.
Shown in The amount of addition of these acid proliferating agents depends on the acid-sensitive resin 1
1 part by weight to 30 parts by weight, particularly preferably 2 parts by weight to 20 parts by weight with respect to 00 parts by weight. If the amount is less than 1 part by weight, no improvement in sensitivity due to the addition of the acid proliferating agent is observed.

【0038】本発明の感活性エネルギー線樹脂組成物に
よるパターン形成は、以下のようにして行う。本発明の
感活性エネルギー線樹脂組成物を溶媒に溶解して均一な
溶液とし、濾過などの適切な方法によって夾雑物を除去
する。ついで、常法にしたがってこの溶液を基板表面に
塗布して薄膜とし、プレベーク加熱処理によって溶媒を
除き、パターン露光を行って酸を発生させる。ついで、
加熱(ポストベーク)処理を行って酸増殖剤の連鎖的な
分解を促す。加熱処理の条件は、露光エネルギー、用い
る酸に活性な酸増殖剤の種類、アルカリ可溶性樹脂の種
類、なとによって変動するが、加熱温度は60℃から1
50℃の範囲、より好ましくは80℃から130℃の範
囲である。加熱時間は10秒から10分、より好ましく
は30秒から5分である。これを露光部と未露光部とで
溶解度に差を生じる溶媒中に浸漬して現像を行ってパタ
ーンを得る。
The pattern formation using the active energy ray resin composition of the present invention is performed as follows. The active energy ray resin composition of the present invention is dissolved in a solvent to form a uniform solution, and impurities are removed by an appropriate method such as filtration. Next, this solution is applied to the substrate surface in a conventional manner to form a thin film, the solvent is removed by a pre-baking heat treatment, and pattern exposure is performed to generate an acid. Then
A heating (post-bake) treatment is performed to promote the chain decomposition of the acid proliferating agent. The conditions of the heat treatment vary depending on the exposure energy, the type of acid proliferating agent active for the acid to be used, the type of the alkali-soluble resin, and the like.
It is in the range of 50 ° C, more preferably in the range of 80 ° C to 130 ° C. The heating time is from 10 seconds to 10 minutes, more preferably from 30 seconds to 5 minutes. This is immersed in a solvent that causes a difference in solubility between the exposed part and the unexposed part and developed to obtain a pattern.

【0039】[0039]

【実施例】次に実施例により本発明をさらに詳細に説明
するが、本発明の主旨を逸脱しない限り本発明はこれら
の実施例に限定されるものではない。 (実施例1)2,3−ピナンジオール22.9g、トリ
エチルアミン16.3gおよび4−ジメチルアミノピリ
ジン4.02gを258mlのジクロロメタンに溶解
し、この溶液に110mlのジクロロメタンに溶解した
p−スチレンスルホニルクロリド30.0gの溶液をゆ
っくりと滴下した。室温で24時間攪拌してから、溶液
を希塩酸で中和して水層を除いた。有機層を飽和重炭酸
ソーダの水溶液で洗浄し、飽和食塩水で洗浄してから無
水硫酸マグネシウムで乾燥した。溶媒を留去して得られ
た油状残査をシリカゲルカラムクロマトにより精製し、
21.1gの2−ヒドロキシ−3−(p−スチレンスル
ホニルオキシ)ピナン(図1のA−1)を得た。こうし
て得た2−ヒドロキシ−3−(p−スチレンスルホニル
オキシ)ピナン1.05gとアゾビスイソブチロニトリ
ル9mgを10.5mlのTHFに溶解し、脱気封管後
67℃で14時間反応させた。重合溶液を石油エーテル
に注いで樹脂を沈殿させ、これをろ過して集めて真空で
乾燥させ、0.69gの本発明のビニル系酸感受性樹脂
(Mw=18,000,Mw/Mn=5.9)を得た。
Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples unless departing from the gist of the present invention. Example 1 22.9 g of 2,3-pinanediol, 16.3 g of triethylamine and 4.02 g of 4-dimethylaminopyridine were dissolved in 258 ml of dichloromethane, and p-styrenesulfonyl chloride 30 dissolved in 110 ml of dichloromethane was added to this solution. 0.0 g of the solution was slowly added dropwise. After stirring at room temperature for 24 hours, the solution was neutralized with dilute hydrochloric acid to remove the aqueous layer. The organic layer was washed with an aqueous solution of saturated sodium bicarbonate, washed with saturated saline, and then dried over anhydrous magnesium sulfate. The oily residue obtained by distilling off the solvent was purified by silica gel column chromatography,
21.1 g of 2-hydroxy-3- (p-styrenesulfonyloxy) pinane (A-1 in FIG. 1) was obtained. 1.05 g of 2-hydroxy-3- (p-styrenesulfonyloxy) pinane thus obtained and 9 mg of azobisisobutyronitrile were dissolved in 10.5 ml of THF, and after degassing and sealing, the mixture was reacted at 67 ° C. for 14 hours. Was. The polymerization solution was poured into petroleum ether to precipitate the resin, which was collected by filtration, dried in vacuo, and 0.69 g of the vinyl acid-sensitive resin of the present invention (Mw = 18,000, Mw / Mn = 5. 9) was obtained.

【0040】(実施例2)実施例1で得た2−ヒドロキ
シ−3−(p−スチレンスルホニルオキシ)ピナン及び
tert−ブチルメタクリレートを50:50のモル比
でTHFに溶解し、実施例1と同様な条件でラジカル重
合反応を行った。重合物を石油エーテル中に沈殿させて
から分離し、真空で乾燥した。得られた本発明のビニル
系酸感受性樹脂のモノマーモル比をNMRスペクトルに
よって調べた結果、42:58であった。得られた本発
明のビニル系酸感受性樹脂をシクロヘキサノンに溶解し
て10wt%の溶液とし、これに光酸発生剤としてジフ
ェニル−(4−フェニルチオフェニル)スルホニウムヘ
キサフルオロアンチモネートを樹脂に対して5wt%添
加した。この溶液をシリコンウェハ上にスピン塗布し、
100℃で1分プリベーク処理を施した。この膜にXe
−Hgランプからの313nmの光を照射し、100℃
で90秒加熱した後に2.5wt%のテトラメチルアン
モニウムヒドロキシド水溶液で現像し、水で20秒洗浄
し、乾燥してから膜厚を測定した。その結果、2.5m
J/cmの露光量で完全に溶解した。
Example 2 The 2-hydroxy-3- (p-styrenesulfonyloxy) pinane and tert-butyl methacrylate obtained in Example 1 were dissolved in THF at a molar ratio of 50:50. A radical polymerization reaction was performed under the same conditions. The polymer was separated by precipitation in petroleum ether and dried in vacuo. The monomer molar ratio of the obtained vinyl acid-sensitive resin of the present invention was determined by NMR spectrum to be 42:58. The obtained vinyl acid-sensitive resin of the present invention is dissolved in cyclohexanone to form a 10 wt% solution, and diphenyl- (4-phenylthiophenyl) sulfonium hexafluoroantimonate as a photoacid generator is added to the resin in an amount of 5 wt%. % Was added. This solution is spin-coated on a silicon wafer,
A pre-bake treatment was performed at 100 ° C. for 1 minute. Xe
Irradiating light of 313 nm from a Hg lamp at 100 ° C.
And then developed with a 2.5 wt% aqueous solution of tetramethylammonium hydroxide, washed with water for 20 seconds, dried, and the film thickness was measured. As a result, 2.5m
It was completely dissolved at an exposure dose of J / cm.

【0041】(実施例3)実施例2と同様に、16:8
4のモル比の2−ヒドロキシ−3−(p−スチレンスル
ホニルオキシ)ピナン及びtert−ブチルメタクリレ
ートをラジカル重合させて、10:90モル比からなる
本発明のビニル系酸感受性樹脂を得た。この樹脂のシク
ロヘキサン溶液に光酸発生剤としてジフェニル−(4−
フェニルチオフェニル)スルホニウムヘキサフルオロア
ンチモネートを樹脂に対して5wt%添加し、実施例2
と同様にして露光処理を施したところ、1.5mJ/c
2 の露光量で完全に2.5wt%のテトラメチルアン
モニウムヒドロキシド水溶液に溶解した。
(Embodiment 3) As in Embodiment 2, 16: 8
By radical polymerization of 2-hydroxy-3- (p-styrenesulfonyloxy) pinane and tert-butyl methacrylate in a molar ratio of 4, a vinyl acid-sensitive resin of the present invention having a molar ratio of 10:90 was obtained. As a photoacid generator, diphenyl- (4-
Example 2 (5% by weight of phenylthiophenyl) sulfonium hexafluoroantimonate was added to the resin.
Exposure was performed in the same manner as described above.
It was completely dissolved in a 2.5 wt% aqueous solution of tetramethylammonium hydroxide at an exposure dose of m 2 .

【0042】(実施例4)実施例2で得た本発明のビニ
ル系酸感受性樹脂のシクロヘキサン溶液に光酸発生剤と
してジフエニル−(4−フェニルチオフェニル)スルホ
ニウムヘキサフルオロアンチモネートを樹脂に対して5
wt%添加し、さらに、酸増殖剤である2−ヒドロキシ
−3−オクタンスルホニルオキシピナンを樹脂に対して
5wt%、10wt%及び20wt%添加した。これら
の溶液をシリコンウェハ上にスピン塗布し、313nm
の光で露光したところ、それぞれ、0.9mJ/cm
2 、0.9mJ/cm2 、0.3mJ/em2 で完全に
溶解した。
Example 4 Diphenyl- (4-phenylthiophenyl) sulfonium hexafluoroantimonate as a photoacid generator was added to the cyclohexane solution of the vinyl acid-sensitive resin of the present invention obtained in Example 2 with respect to the resin. 5
wt%, and 2-hydroxy-3-octanesulfonyloxypinane, which is an acid proliferating agent, was added to the resin at 5 wt%, 10 wt%, and 20 wt%. These solutions are spin-coated on a silicon wafer and 313 nm
When exposed to light of 0.9 mJ / cm, respectively.
2 , and completely dissolved at 0.9 mJ / cm 2 and 0.3 mJ / em 2 .

【0043】(実施例5)実施例3で得た本発明のビニ
ル系酸感受性樹脂のシクロへキサン溶液に光酸発生剤と
してジフェニル−(4−フェニルチオフェニル)スルホ
ニウムヘキサフルオロアンチモネートを樹脂に対して5
wt%添加し、さらに、酸増埴剤である2−ヒドロキシ
−3−オクタンスルホニルオキシピナンを樹脂に対して
5wt%、10wt%及び20wt%添加した。これら
の溶液をシリコンウェハ上にスピン塗布し、313nm
の光で露光したところ、それぞれ、0.5mJ/cm
2 、0.4mJ/cm2 、0.1mJ/cm2 で完全に
溶解した。
(Example 5) Diphenyl- (4-phenylthiophenyl) sulfonium hexafluoroantimonate as a photoacid generator was added to the cyclohexane solution of the vinyl acid-sensitive resin of the present invention obtained in Example 3 using the resin. 5 for
5%, 10% and 20% by weight of 2-hydroxy-3-octanesulfonyloxypinane, which is an acid enriching agent, was added to the resin. These solutions are spin-coated on a silicon wafer and 313 nm
Exposure to 0.5 mJ / cm
2 , completely dissolved at 0.4 mJ / cm 2 and 0.1 mJ / cm 2 .

【0044】(実施例6)実施例5で調製した本発明の
感活性エネルギー線樹脂組成物をシリコンウェハ上にス
ピン塗布してからプリベークし、フォトマスク越しに3
13nmに光を照射した。照射後100℃で1分ポスト
ベーク処理を施し、2.5wt%のテトラメチルアンモ
ニウムヒドロキシド水溶液で現像処理をしたところ、明
瞭なポジ型画像が得られた。
Example 6 The active energy ray-sensitive resin composition of the present invention prepared in Example 5 was spin-coated on a silicon wafer, prebaked, and then dried through a photomask.
Light was irradiated to 13 nm. After the irradiation, post-baking was performed at 100 ° C. for 1 minute, and development was performed with a 2.5 wt% aqueous solution of tetramethylammonium hydroxide. As a result, a clear positive image was obtained.

【0045】[0045]

【発明の効果】本発明の請求項1記載のビニル系酸感受
性樹脂は、酸触媒反応によって樹脂にスルホン酸残基が
形成されるので、極性溶媒やアルカリ水溶液中での溶解
性が向上する。また、ビシクロアルキル基は、一本鎖ア
ルキル基に比較して耐酸素プラズマエッチング性に優れ
ている。化学増幅型感光性材料の感度が向上されるの
で、高感度パターン形成材料に用いることができる。酸
の発生量は酸増殖基によって大幅に増大されるから、環
境に存在する塩基性物質による光発生した酸の中和効果
を軽減できる。このために、良好なレリーフパターンが
形成される。
In the vinyl acid-sensitive resin according to the first aspect of the present invention, since a sulfonic acid residue is formed on the resin by an acid catalyzed reaction, the solubility in a polar solvent or an aqueous alkali solution is improved. Further, a bicycloalkyl group is more excellent in oxygen plasma etching resistance than a single-chain alkyl group. Since the sensitivity of the chemically amplified photosensitive material is improved, it can be used as a high-sensitivity pattern forming material. Since the amount of generated acid is greatly increased by the acid propagating group, the neutralizing effect of the photogenerated acid by the basic substance existing in the environment can be reduced. Therefore, a good relief pattern is formed.

【0046】本発明の請求項2記載のビニル系酸感受性
樹脂は、感度がより大幅に向上される。
The vinyl acid-sensitive resin according to the second aspect of the present invention has much higher sensitivity.

【0047】本発明の請求項3記載の感活性エネルギー
線樹脂組成物は、ビニル系酸感受性樹脂に、活性エネル
ギー線の作用によって強酸を発生する酸発生剤を添加し
てなるものであり、光分解によって生成する酸は、光反
応物質とともに酸増殖剤に作用して酸の発生を促進する
ので、感度が向上する。
The active energy ray resin composition according to the third aspect of the present invention is obtained by adding an acid generator which generates a strong acid by the action of active energy rays to a vinyl acid-sensitive resin. The acid generated by the decomposition acts on the acid multiplying agent together with the photoreactive substance to promote the generation of the acid, thereby improving the sensitivity.

【0048】本発明の請求項4記載の感活性エネルギー
線樹脂組成物は、ビニル系酸感受性樹脂、活性エネルギ
ー線によって酸を発生する物質及び酸の作用によって酸
を発生する酸増殖能を有する酸増殖剤とからなるもので
あり、酸増殖剤の添加により感度がさらに向上する。
The active energy ray-sensitive resin composition according to claim 4 of the present invention is a vinyl acid-sensitive resin, a substance capable of generating an acid by an active energy ray, and an acid capable of generating an acid by the action of an acid and having an acid-proliferating ability. It consists of a proliferating agent, and the sensitivity is further improved by adding an acid proliferating agent.

【0049】本発明の請求項5記載のパターン形成法に
より、基板表面に高感度でパターンを容易に形成でき
る。
According to the pattern forming method of the present invention, a pattern can be easily formed with high sensitivity on the substrate surface.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 (A−1)〜(A−6)は本発明に好適に用
いられる酸増殖性モノマーの例の分子構造を示す説明図
である。
FIG. 1 is an explanatory diagram showing a molecular structure of an example of an acid-proliferating monomer suitably used in the present invention.

【図2】 (B−1)〜(B−20)は本発明に好適に
用いられるビニル重合性酸反応性モノマーの例の分子構
造を示す説明図である。
FIG. 2 (B-1) to (B-20) are explanatory diagrams showing the molecular structures of examples of a vinyl polymerizable acid-reactive monomer suitably used in the present invention.

【図3】 (C−1)〜(C−11)は本発明に好適に
用いられる光酸発生剤の例の分子構造を示す説明図であ
る。
FIGS. 3 (C-1) to (C-11) are explanatory views showing the molecular structures of examples of a photoacid generator suitably used in the present invention.

【図4】 (D−1)〜(D−13)は本発明に好適に
用いられる酸増殖剤の例の分子構造を示す説明図であ
る。
FIG. 4 is an explanatory diagram showing a molecular structure of an example of an acid proliferating agent suitably used in the present invention.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H025 AA01 AA02 AB16 AC01 AD03 BE00 BE10 BG00 CB14 CB41 CB45 FA12 4J100 AB07P AL04Q AL08Q AL19Q BA03P BA11Q BA12Q BA51Q BA55P BC02P BC02Q BC03Q BC04Q BC33Q CA01 CA04 JA38  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H025 AA01 AA02 AB16 AC01 AD03 BE00 BE10 BG00 CB14 CB41 CB45 FA12 4J100 AB07P AL04Q AL08Q AL19Q BA03P BA11Q BA12Q BA51Q BA55P BC02P BC02Q BC03Q BC04Q BC33Q CA01 JA04

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 酸の作用によって酸を発生する酸増殖能
を有する下記の一般式(1)で表される2−ヒドロキシ
ビシクロアルカン−1−スルホネート残基を側鎖に有す
ることを特徴とするビニル系酸感受性樹脂。 【化1】 (式中、R1 は水素原子またはメチル基、R2 は水素原
子またはメチル基、m+nは2であり、mは1または2
を示す)
1. A side chain comprising a 2-hydroxybicycloalkane-1-sulfonate residue represented by the following general formula (1) having an acid-proliferating ability to generate an acid by the action of an acid. Vinyl acid-sensitive resin. Embedded image (Wherein R 1 is a hydrogen atom or a methyl group, R 2 is a hydrogen atom or a methyl group, m + n is 2, m is 1 or 2
Indicates)
【請求項2】 下記の一般式(2)で表される2−ヒド
ロキシビシクロアルカン−1−スルホネート残基を有す
るビニル重合性モノマー単位および酸による脱保護反応
によってカルボキシル基を発生するビニル重合性モノマ
ー単位を含有することを特徴とする請求項1に記載の酸
感受性樹脂。 【化2】 (式中、R1 は水素原子またはメチル基、R2 は水素原
子またはメチル基、R3は何もないか、あるいは2価の
残基、m+nは2であり、mは1または2を示す)
2. A vinyl polymerizable monomer unit having a 2-hydroxybicycloalkane-1-sulfonate residue represented by the following general formula (2), and a vinyl polymerizable monomer which generates a carboxyl group by a deprotection reaction with an acid. 2. The acid-sensitive resin according to claim 1, comprising units. Embedded image (Wherein, R 1 is a hydrogen atom or a methyl group, R 2 is a hydrogen atom or a methyl group, R 3 is nothing or a divalent residue, m + n is 2, and m represents 1 or 2) )
【請求項3】 請求項1あるいは請求項2に記載の酸感
受性樹脂と活性エネルギー線によって酸を発生する物質
とからなることを特徴とする感活性エネルギー線樹脂組
成物。
3. An active energy ray resin composition comprising the acid-sensitive resin according to claim 1 and a substance generating an acid by active energy rays.
【請求項4】 請求項1あるいは請求項2に記載の酸感
受性樹脂、活性エネルギー線によって酸を発生する物質
及び酸の作用によって酸を発生する酸増殖能を有する酸
増殖剤とからなることを特徴とする感活性エネルギー線
樹脂組成物。
4. An acid-sensitive resin according to claim 1 or 2, comprising a substance capable of generating an acid by an active energy ray and an acid proliferating agent capable of generating an acid by the action of an acid. Characteristic active energy ray resin composition.
【請求項5】 請求項3あるいは請求項4に記載の感活
性エネルギー線樹脂組成物を用いることを特徴とするパ
ターン形成法。
5. A method for forming a pattern, comprising using the active energy ray resin composition according to claim 3 or 4.
JP26394399A 1999-09-17 1999-09-17 Acid sensitive resin, resin composition for active energy ray comprising the acid sensitive resin and method for forming pattern using the same Pending JP2001081138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26394399A JP2001081138A (en) 1999-09-17 1999-09-17 Acid sensitive resin, resin composition for active energy ray comprising the acid sensitive resin and method for forming pattern using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26394399A JP2001081138A (en) 1999-09-17 1999-09-17 Acid sensitive resin, resin composition for active energy ray comprising the acid sensitive resin and method for forming pattern using the same

Publications (2)

Publication Number Publication Date
JP2001081138A true JP2001081138A (en) 2001-03-27
JP2001081138A5 JP2001081138A5 (en) 2006-10-19

Family

ID=17396421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26394399A Pending JP2001081138A (en) 1999-09-17 1999-09-17 Acid sensitive resin, resin composition for active energy ray comprising the acid sensitive resin and method for forming pattern using the same

Country Status (1)

Country Link
JP (1) JP2001081138A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100811394B1 (en) * 2001-10-18 2008-03-07 주식회사 하이닉스반도체 Novel negative type photoresist polymer and photoresist composition containing the same
WO2009057484A1 (en) * 2007-10-29 2009-05-07 Jsr Corporation Radiation sensitive resin composition and polymer
JP2011033729A (en) * 2009-07-30 2011-02-17 Fujifilm Corp Actinic ray- or radiation-sensitive resin composition and pattern forming method using the same
JP2011053624A (en) * 2009-09-04 2011-03-17 Fujifilm Corp Actinic ray- or radiation-sensitive resin composition and pattern forming method using the same
JP2011150211A (en) * 2010-01-25 2011-08-04 Fujifilm Corp Actinic ray-sensitive or radiation-sensitive resin composition and method for forming pattern using the same
KR101308695B1 (en) * 2006-07-10 2013-09-13 주식회사 동진쎄미켐 Acid amplifier and photosensitive polymer including the same
WO2015045240A1 (en) 2013-09-24 2015-04-02 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
JP2016071243A (en) * 2014-09-30 2016-05-09 富士フイルム株式会社 Method for forming resin pattern, method for forming pattern, cured film, liquid crystal display device, organic el display device, and touch panel display device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100811394B1 (en) * 2001-10-18 2008-03-07 주식회사 하이닉스반도체 Novel negative type photoresist polymer and photoresist composition containing the same
KR101308695B1 (en) * 2006-07-10 2013-09-13 주식회사 동진쎄미켐 Acid amplifier and photosensitive polymer including the same
WO2009057484A1 (en) * 2007-10-29 2009-05-07 Jsr Corporation Radiation sensitive resin composition and polymer
JP5555914B2 (en) * 2007-10-29 2014-07-23 Jsr株式会社 Radiation sensitive resin composition
JP2011033729A (en) * 2009-07-30 2011-02-17 Fujifilm Corp Actinic ray- or radiation-sensitive resin composition and pattern forming method using the same
JP2011053624A (en) * 2009-09-04 2011-03-17 Fujifilm Corp Actinic ray- or radiation-sensitive resin composition and pattern forming method using the same
JP2011150211A (en) * 2010-01-25 2011-08-04 Fujifilm Corp Actinic ray-sensitive or radiation-sensitive resin composition and method for forming pattern using the same
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
WO2015045240A1 (en) 2013-09-24 2015-04-02 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
KR20160058905A (en) * 2013-09-24 2016-05-25 인터내셔널 비지네스 머신즈 코포레이션 Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
CN105723281A (en) * 2013-09-24 2016-06-29 国际商业机器公司 Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
EP3049868A1 (en) * 2013-09-24 2016-08-03 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
JP2016533532A (en) * 2013-09-24 2016-10-27 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation Polymers containing sulfonate esters for organic solvent-based dual tone photoresists
EP3049868A4 (en) * 2013-09-24 2017-05-10 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
KR102249744B1 (en) * 2013-09-24 2021-05-10 인터내셔널 비지네스 머신즈 코포레이션 Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
JP2016071243A (en) * 2014-09-30 2016-05-09 富士フイルム株式会社 Method for forming resin pattern, method for forming pattern, cured film, liquid crystal display device, organic el display device, and touch panel display device

Similar Documents

Publication Publication Date Title
JP3819531B2 (en) Resist composition and resist pattern forming method
US5665518A (en) Photoresist and monomer and polymer for composing the photoresist
JP5687442B2 (en) Photoacid generator and photoresist containing the same
JP3040998B2 (en) Chemically amplified positive photoresist composition
JP3120077B2 (en) Polymer for producing chemically amplified resist and resist composition containing the same
KR19980069706A (en) Method for the fabrication of devices using energy-sensitive resist materials and energy-sensitive resist materials
JP2907144B2 (en) Acid derivative compound, polymer compound, photosensitive resin composition using the same, and pattern forming method
JPH1112326A (en) Acid-sensitive polymer, resist composition, formation of resist pattern and production of semiconductor device
JP3236073B2 (en) Resist composition and pattern forming method using the same
JP3914363B2 (en) Re-dissolvable acid-crosslinking polymer and photosensitive resin composition combining the polymer and a photoacid generator
JP2002363225A (en) Polymer for chemically amplified resist and chemically amplified resist composition containing the same
JP2000109525A (en) Polymer for producing radiation-sensitive resist and resist composition containing the same
US6312868B1 (en) Photoresist cross-linker and photoresist composition comprising the same
JP4347179B2 (en) Novel polymer and chemically amplified resist containing the same
JP2001106737A (en) Photoresist polymer, production process therefor, photoresist composition, method for forming photoresist pattern and semiconductor element
KR20000047041A (en) Photoresist crosslinking monomer, polymer thereof and photoresist composition using the same
JP2001081138A (en) Acid sensitive resin, resin composition for active energy ray comprising the acid sensitive resin and method for forming pattern using the same
JP4144957B2 (en) Resist composition and method for forming resist pattern
JP3536015B2 (en) Photoresist monomer and method for producing the same, copolymer for photoresist and method for producing the same, photoresist composition, method for forming photoresist pattern, and semiconductor device
JP2955545B2 (en) Polymer for producing chemically amplified positive photoresist and photoresist containing the same
US20030054285A1 (en) Chemically amplified negative photoresist, and photoresist composition
KR100527411B1 (en) Noble Monomers, Polymers and Photoresist Materials with 7,7-Dimethyloxepan-2-one Group and Method for Patterning
JP2000131847A (en) Resist composition and method for forming resist pattern by using the same
JP2968770B2 (en) Polymer for producing positive photoresist and chemically amplified positive photoresist composition containing the same
KR20000034148A (en) Crosslinking agent for photoresist and photoresist composition using the same

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060828

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060828

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081009

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081028

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090310