JP2001077025A - Manufacture of semiconductor film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a conductive type at high conductivity using a sputtering method which is productive for film forming at a low temperature by setting the temperature of a substrate to a specified value or below at sputtering. SOLUTION: A semiconductor film of a conductive type, P-type or N-type, is manufactured by a sputtering film-formation which uses a single crystal or polycrystal semiconductor target where III value or IV value element for providing a conductive type, P-type or N-type, is added by, preferably, 1×1017 cm-3 or more, in an atmosphere where the partial pressure ratio of hydrogen in an inactive atmosphere is 30% or more such as argon which comprises hydrogen. The formed N-type semiconductor film may be annealed at 700 deg.C or below. As crystallinity degrades when the film-formation temperature at a substrate is 200 deg.C or above, it should be 200 deg.C or below, 100 deg.C or below is preferred, at sputtering.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for obtaining an N-type or P-type semiconductor, that is, a semiconductor film having one conductivity type, by a low-temperature process.

[0002]

2. Description of the Related Art Known methods for obtaining a semiconductor having one conductivity type by a low-temperature process include a method using an ion implantation method and a method using a sputtering method.

[0003] However, the ion implantation method is
There is a problem in productivity, and the sputtering method has a feature that it can be performed at a low temperature of 200 ° C. or less and has excellent productivity, but the electrical characteristics of the formed semiconductor film are low (for example, by sputtering). (The electrical characteristics of devices made using the obtained semiconductor films are low.)

Conventional methods for obtaining a P-type or N-type semiconductor film by a sputtering method include, for example, a target obtained by adding an impurity imparting one conductivity type to single crystal silicon to obtain a one conductivity type silicon film. Using a single-crystal silicon target to which an impurity imparting P-type or N-type is not added, or a reaction gas containing an element imparting one conductivity type ( It is considered that a known method is to perform sputtering in an argon atmosphere to which phosphine is added. However, in the conventional method, 10 ^-5
A P-type or N-type semiconductor film having a conductivity of (Ωcm) ⁻¹ or more could not be obtained. This is because impurities imparting P-type or N-type conductivity do not substitute in the semiconductor and become donors or acceptors.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor film having a high conductivity and one conductivity type by using a sputtering method which can be formed at a low temperature and is excellent in productivity. I do.

[0006]

SUMMARY OF THE INVENTION The present invention is directed to a method for reducing the partial pressure ratio of hydrogen in an inert atmosphere such as argon containing hydrogen to 30.
% Or more, a P-type or N-type element imparting one conductivity type is added to a single crystal or polycrystal of preferably 1 × 10 ¹⁷ cm ⁻³ or more. This is a method for manufacturing a semiconductor, including forming a P-type or N-type semiconductor film having one conductivity type by performing film formation by sputtering using a semiconductor target.

A feature of the present invention is that at a film forming temperature (substrate temperature) of 300 ° C. or less, a single crystal or polycrystalline silicon target has a conductivity of 100 (Ωcm) ^{−1 to} 0.1 (Ωcm) ⁻¹ . A film is formed by sputtering in an atmosphere containing hydrogen by using a target to which an element having a valence of III or IV, which is an impurity imparting one conductivity type, is added, and the conductivity of the film obtained by the sputtering is obtained. Is N-type or P having a conductivity of 1/100 to 1/3 of the target conductivity, that is, 0.1 (Ωcm) ⁻¹ or more.
To obtain a semiconductor of the type.

In the structure of the present invention, the substrate may be grounded (earthed). However, in order to reduce the influence of ion sputtering on the substrate, a substrate (generally, a glass substrate, a silicon substrate, or the like) is used. Used) may be electrically floating, that is, insulated from the surroundings.

In an atmosphere in which the partial pressure ratio of hydrogen is 30% or more, sputtering is performed when the hydrogen partial pressure is 30%.
This is based on the experimental fact that the conductivity of a semiconductor having one conductivity type obtained by sputtering in an atmosphere as described above can be obtained at 10 ⁻² (Ωcm) ⁻¹ or more.

[0010] If the target used for the sputtering film formation is a silicon semiconductor film, an impurity imparting N conductivity type is phosphorus (P), arsenic (As), antimony (Sb),
A single crystal or polycrystalline silicon target to which boron (B), aluminum (Al), or the like is added can be used as long as the impurity imparts a P-type conductor. As a single-crystal or polycrystalline semiconductor target, not only silicon, that is, silicon, but also a semiconductor film formed by Ge, Ge,
Se or a compound semiconductor such as gallium arsenide or gallium antimony may be used.

In the structure of the present invention, the semiconductor film having one conductivity type after film formation may be subjected to thermal annealing at a temperature of 700 ° C. or less.

However, by adopting the structure of the present invention, a conductivity of 10 ⁻² (Ωcm) ⁻¹ or more, which has conventionally been obtained by thermally annealing a semiconductor film having one conductivity type obtained by sputtering or CVD. It is a great feature that the rate can be obtained by sputtering at a low temperature (150 ° C. or lower). This is due to the fact that the N 2 obtained by the method of the present invention immediately after film formation without annealing as shown in FIG.
It is clear from the Raman spectrum of the type semiconductor film.
Referring to FIG. 3, the Raman spectrum of the N-type semiconductor film obtained by sputtering in an atmosphere where the partial pressure of hydrogen is 50% is 521 cm ⁻¹ which is a peak of single crystal silicon (c-Si).
It can be seen that a peak indicating crystallinity appears at a lower wave number.

[0013] It goes without saying that the configuration of the present invention can be applied not only to a silicon semiconductor but also to other semiconductors. For example, a Si _x Ge _1-x semiconductor film having one conductivity type is obtained by simultaneously using silicon (silicon) and germanium targets to which impurities (for example, boron and phosphorus) imparting one conductivity type are added. Can be. In this case, another characteristic is that the composition ratio of the semiconductor film can be changed by changing the area of each target. According to this concept, a semiconductor film having a more complicated composition ratio can be obtained by using a plurality of targets at the same time.

[0014]

[Embodiment 1] In this embodiment, a magnetron type RF shown in FIG.
This is for producing an N-type silicon semiconductor film using a sputter device. Hereinafter, the magnetron type RF sputtering apparatus shown in FIG. 1 will be described. Hereinafter, an outline of the magnetron type RF sputtering apparatus of FIG. 1 will be described.

In FIG. 1, (12) is a substrate, (13) is a holder that can be rotated as required, (14) is a heater for heating a substrate, (15) is a gas introduction system, and (17) is a gas introduction system. A gas introduction system valve (18) is a gas supply system, for example, a cylinder filled with hydrogen. Although only one type of gas supply system is shown in FIG. 1, a gas supply system of argon, phosphine, diborane, nitrogen, etc. may be provided if necessary.
At this time, a plurality of gas introduction systems may be provided so that gas can be introduced into the reaction chamber at the same time. Further, (19) is a high-frequency power supply (13.56 MHz), (20) is a high-frequency matching device, and (21) is a magnetron part provided with a rotating permanent magnet (22) on a circle as required. .

Further, (23) is a shutter for preventing sputter particles (sputtered atoms, clusters, ions, etc.) from reaching the substrate. The shutter (23) prevents impurities from becoming sputtered particles and reaching the substrate immediately after the start of sputtering. However, the shutter (23) can be used as necessary so that the sputtered particles do not reach the surface to be formed. (24) is the target. The target can form a thin film doped with an impurity by mixing an impurity element such as phosphorus, boron, or fluorine as needed. (25) is a gas exhaust system, (26) is a turbo molecular pump, and (27) is an oil rotary pump. (28), (2
9) is an exhaust valve. Further, (34) is provided with an evacuation system (34) including a cryopump (31) and a rotary pump (33) in order to evacuate higher vacuum conditions and specific impurities. Reference numerals (30) and (33) denote valves of the exhaust system (34).

[0017] Among them, the exhaust system (3
4) is mainly used for high vacuum evacuation before film formation, and 10
^The reaction chamber can be evacuated to about ^-10 Torr, and gases and molecules adsorbed in the reaction chamber can be evacuated. In particular, high vacuum evacuation before film formation is effective for reducing the amount of oxygen, carbon, and nitrogen impurities contained in the film. In this embodiment, the heating of the substrate (12) is performed by the heater (14), but it may be performed by an infrared lamp.

In this embodiment, the target has a resistivity ρ = to which antimony which is an impurity imparting one conductivity type is added.
Although a molten silicon target of 0.60 Ωcm was used, another impurity imparting one conductivity type, for example, N-type
It goes without saying that B can be used for As, Sb and P types. It is also effective to increase the conductivity of the target as much as possible by a method such as thermal annealing. The film formation conditions were as follows: in a mixed atmosphere of hydrogen and argon, the partial pressure of hydrogen was used as a parameter, the film formation temperature was
a, A film was formed to a thickness of 2000 ° at an RF power of 400 W.

FIG. 2 shows the relationship between the conductivity σ (Ωcm) ^{−1 of} the N-type semiconductor film obtained according to the present embodiment and the volume percentage of hydrogen in the atmosphere at the time of film formation. Referring to FIG. 2, when the hydrogen partial pressure during sputtering is 30% or more, σ = 10 ⁻² (Ωc
m) It can be seen that a value of ^-1 or more was obtained.

FIG. 3 shows a Raman spectrum obtained in this embodiment. It can be seen that a sharp peak at a hydrogen partial pressure P _H where less than 521 cm ^-1 is a peak of greatly when single crystalline silicon with respect to P _T is the total pressure, as shown in FIG occur.

In general, if a value of σ = 10 ⁻¹ (Ωcm) ⁻¹ or more can be obtained, it becomes sufficiently practical as a source / drain region of an insulated gate field effect transistor. Considering this, a silicon film having one conductivity type (in this case, an N-type silicon film) obtained by sputtering in an inert atmosphere to which hydrogen is added according to the present invention can be formed over a large area. Therefore, it can be said that it is a semiconductor film having one conductivity type which is more economical and more excellent in electrical characteristics than conventional impurity ion doping or the like.

In the configuration of the present invention, these methods are used.
The film formed by oxygen was 7 × 10¹⁹cm^-3Less preferred
Or 1 × 10¹⁹cm^-3The following concentrations are preferred.
For example, impurities in SIMS (secondary ion mass spectrometry)
And oxygen is 8 × 10¹⁸cm ^-3, Carbon 3 × 10¹⁶cm^-3Get
Was. Hydrogen is 4 × 10²⁰cm^-3And silicon 4 × 10^{twenty two}
cm^-3Was 1 atomic%.

In this embodiment, specific impurities such as oxygen, carbon and nitrogen are selected by using a cryopump provided in an exhaust system (34) shown in the magnetron type RF sputtering apparatus shown in FIG. Exhausting is
There is a great effect for improving the quality of a semiconductor film formed by sputtering. For example, in a P-type or N-type semiconductor film to which an impurity imparting one conductivity type is added, oxygen, carbon,
The presence of nitrogen impurities adversely affects the performance of the device when the device is manufactured using the semiconductor film. For example, when an oxygen element is mixed in a semiconductor layer included in a solar cell, conversion efficiency and durability may be deteriorated. Therefore, by evacuating these impurities such as oxygen, carbon, and nitrogen efficiently, an adverse effect on the semiconductor film can be prevented.

The embodiment shown in FIG.
Cryopon, which is an adsorption pump provided in
Impurities such as oxygen, carbon, nitrogen, etc.
Such molecules can be efficiently exhausted. For example a book
In an embodiment, a pump equipped with a turbo-molecular pump is provided.
When the film is formed using only the gas system (25), the formed film
The concentration of oxygen contained in the solution is determined by SIMS (Secondary Ion Mass Spectrometry)
According to 3 × 10¹⁹cm^-3But the same deposition pressure
Exhaust system equipped with a cryopump (34)
The concentration of oxygen contained in the film formed by the
× 10¹⁸cm ^-3And could be. Also formed coating
The carbon concentration in the inside is 3 × 10¹⁶cm^-3Can get the hydrogen
Is 4 × 10²⁰cm^-3And silicon 4 × 10^{twenty two}cm^-3As ratio
By comparison, it was 1 atomic%.

In the structure of the present invention, it has been obtained as data that a relatively high film formation pressure of about 2.5 pa is good, so that film formation in an ultra-high vacuum state is inappropriate.
Therefore, as described above, the use of a cryopump capable of exhausting oxygen, carbon, and nitrogen as adsorbed molecules has a remarkable effect. Furthermore, in the present invention, since a film is formed by sputtering in a mixed atmosphere of an inert gas such as argon and hydrogen, oxygen, which is the most problematic impurity, is combined with hydrogen to form a molecule and exists in the reaction space. I do. Therefore, as described above, the use of the cryopump makes it possible to efficiently exhaust the molecules composed of oxygen and hydrogen. Further, as in the configuration of the present invention, P-type or N-type
In the case of forming a semiconductor film which must contain impurities (for example, phosphorus and antimony) contributing to the conductivity type of the mold, in a vapor phase growth method such as a CVD method using a reaction gas, a conductive type is formed in a gas phase. Since a contributing impurity must be added, there is a problem that an unnecessary impurity is inevitably mixed. As a method of solving such a problem, there is a method of using a special reaction furnace using an extremely high-purity reaction gas. However, there is a problem of cost and poor productivity.

As described above, as in the present embodiment, a semiconductor film, particularly one conductivity type, is imparted by sputtering in an inert atmosphere containing hydrogen without using a reaction gas by using a turbo molecular pump and a cryopump together. III value, V
The method for manufacturing a semiconductor film containing a valence element can efficiently exhaust oxygen, carbon, and nitrogen, which are unnecessary impurities in a semiconductor film to be formed, and at the same time, has excellent productivity at low cost. It can be said that the method.

[0027] In the structure of the present invention, the N-type semiconductor film after film formation may be subjected to thermal annealing at a temperature of 700 ° C or less.
However, when the film forming temperature is 200 ° C. or higher, the crystallinity is deteriorated.
The temperature is preferably 100 ° C. or less. This is clear from FIG. FIG. 4 shows the relationship between the XRD intensity and the film formation temperature of a film that was subjected to thermal annealing at 600 ° C. for 72 hours after film formation under the condition of a hydrogen partial pressure of 50% in this example. This figure shows that the film formed at a temperature around 200 ° C. has almost no crystallinity.

The tendency shown in FIG. 4 can be explained by the following model. Since the silicon film obtained by sputtering in this embodiment is sputtered in an atmosphere in which a large amount of hydrogen is present at the time of sputtering, the elements constituting the target are clusters of tens to hundreds of thousands of atoms. While the cluster jumps out of the target and flies in the hydrogen plasma, dangling bonds of the cluster are neutralized by hydrogen, and the cluster reaches the substrate. At this time, since the impurity imparting the P-type or N-type conductivity in the target acts as an acceptor or a donor, the impurity also serves as an acceptor or a donor in the cluster flying toward the substrate. . Therefore, when the cluster reaches the substrate and forms a silicon film, the impurity imparting the P-type or N-type conductivity has a characteristic that it acts in a film formed by sputtering as an acceptor or a donor. When the temperature at the time of film formation is high when the cluster whose dangling bonds are neutralized by hydrogen reaches the substrate from the target, the hydrogen neutralizing the dangling bonds of the silicon clusters separates away from the substrate. In, the clusters cannot be connected to each other and cannot form an order. Therefore, when a silicon film formed in an atmosphere at a temperature of 200 ° C. or more is thermally annealed, the silicon film cannot be brought into a more ordered state, and as a result, the XRD intensity is not high. On the other hand, when the temperature at the time of film formation is low, the clusters of silicon, which are the sputtered particles, are bonded via hydrogen on the substrate. As a result, a relatively high order state is achieved. By thermally annealing this film at a temperature of 450 to 700 degrees, the silicon clusters bonded via hydrogen become bonds between silicon atoms, shift to a higher order state, and bond with each other due to existing silicon. , Silicon comrades pull each other. When the crystal is measured by laser Raman spectroscopy, a peak shifted to a lower frequency side than a peak of 521 cm ^-1 of single crystal silicon is observed. The peak shifted to the lower frequency side than 521 cm ^-1 indicates a crystalline state having a weak lattice distortion. Also, the apparent particle size is calculated to be 50 to 500 ° like a microcrystal when calculated from the half-value width. However, in actuality, there are a large number of regions having high crystallinity and a cluster structure. It is possible to form a film having a semi-amorphous structure in which silicon bonds with each other (anchoring). Therefore, a silicon film obtained by sputtering at a low film forming temperature (atmosphere of 150 ° C. or less) is further enhanced by thermal annealing while a film formed at a high substrate temperature. As described above, even if thermal annealing is carried out without order from the beginning, a film having a semi-amorphous structure in which the clusters are bonded to each other by silicon (anchoring) cannot be formed, and the peak of XRD is also low. Mostly not.

In the present invention, a single crystal as a target,
A polycrystalline semiconductor target is used, and a III- or V-valent impurity which imparts a P-type or N-type conductivity type in the target is 100% ionized, ie, a completely III- or V-valent impurity. Is replaced as an acceptor or donor, and this target is sputtered in an atmosphere containing hydrogen, whereby the clusters in which the impurities are replaced as acceptors or donors fly toward the substrate, and the uncoupled bond is generated by hydrogen plasma. Reaches the substrate while neutralizing, the III- or IV-valent impurities in the semiconductor film formed by sputtering have a high ionization rate, these impurities are substituted as acceptors or donors, and the ionization rate is reduced. Could be enhanced.

The structure of the present invention is not limited to silicon semiconductors,
It goes without saying that it can be applied to the body. For example, one conductive
Silicon (silicon) doped with an impurity for imparting a mold
By simultaneously using the rumanium target,
Si with one conductivity type_xGe _1-xSemiconductor film can be obtained
Wear. In this case, change the area of each target
Thus, the composition ratio of the semiconductor film can be changed. this
According to the idea, more than one target is used simultaneously
It is possible to obtain a semiconductor film with a more complicated composition ratio
it can.

At the time of sputtering, a halogen element is added to the atmosphere, and NF ₃ or the like is added in an amount of 0.1 to ₃₀ to neutralize dangling bonds of clusters of sputtered atoms in the same manner as hydrogen.
You may add about 10%.

[0032]

Embodiment 2 In this embodiment, the magnetron type RF shown in FIG.
P-type Si doped with boron (B) using a sputtering device
_x Ge _1-x semiconductor film was obtained. In this embodiment, the pressure is set to 2. using a magnetron type RF sputtering apparatus.
N-type Si _x Ge ₁₋ sputtered at 5 pa, RF power 200 W, substrate temperature 100 ° C., in a mixed atmosphere of hydrogen and argon with a hydrogen partial pressure ratio of 80%, and then heat-annealed at 600 ° C. for 72 hours. _x semiconductor film. The single crystal target of silicon and germanium is phosphorus
An N-type Si _x Ge _1-x formed on a substrate by disposing a plurality of molten substrates containing at least × 10 ¹⁷ cm ^-3 in the same area and dispersing them, and further rotating the substrate side by planetary rotation.
The uniformity of the semiconductor film was improved.

Also in this embodiment, since the phosphorus in the silicon and germanium single crystal target is replaced as a donor, the target has a conductivity of 1/100 to 1/3 of the conductivity of the target which is a feature of the present invention. A P-type semiconductor can be manufactured.

The reason why the reaction pressure was increased to 2.5pa was that of the present inventor.
This is based on the results of the experiment shown in FIG. FIG.
N-type with thermal annealing at 600 ° C for 72 hours after film formation
Pressure and XRD intensity (ITENSIT
Y). When the data in Fig. 5 is obtained
The film formation conditions are monocrystalline or polycrystalline silicon target.
When the target has a resistivity of 2-3 KΩcm
The film was deposited at a temperature of 150 ° C and RF
Power is 400W, atmosphere is hydrogen partial pressure ratio (P _T/ P_T) Is 3
It is in a mixed atmosphere of 0% hydrogen and argon. And mature
After the film, heat at 600 ° C for 72 hours in an inert atmosphere.
This is what Neil did. According to FIG. 5, the reaction pressure was 2.5
It turns out that pa is good.

The reason why the RF power was set to 200 W is based on the experimental results shown in FIG. The data shown in FIG. 6 is obtained under the same conditions as the manufacturing conditions shown in FIG.
This graph shows the relationship between the input power during film formation and the XRD intensity (ITENSITY) when the film formation pressure is 0.5 pa. From FIG. 5, the input power at the time of sputtering is 2
It is understood that a relatively low value of about 00 W is preferable.

In this embodiment, the reason why the substrate temperature is set to 100 ° C. is based on the experimental results shown in FIG. The data shown in FIG. 4 shows the relationship between the substrate temperature and the XRD intensity of the obtained film under the same manufacturing conditions as those shown in FIG. Referring to FIG. 4, when the film formation temperature (in this case, the substrate temperature) is 100 ° C. or higher, the crystallinity of the film after the thermal annealing becomes low. It can be seen that the film after annealing has high crystallinity. This is because, as described above, when a film is formed at a low temperature, the sputtered silicon clusters are bonded by hydrogen in the atmosphere, and the silicon clusters are bonded by thermal annealing. Is to be preserved and promoted.

Also in this embodiment, the conductivity of the sputtered film can be increased by increasing the conductivity of the target. This is because, as described above, the impurities that have become acceptors or donors in the target are present at a high ionization rate in the film formed by sputtering in an atmosphere containing hydrogen and are substituted as the acceptors or donors. , 1/1 of target conductivity
This is because a P or N-type semiconductor film having a high conductivity of 00 to 1/3 can be obtained.

[0038]

[Embodiment 3] In this embodiment, an N-type semiconductor film in which phosphorus of Si _x C _1-X (0 ≦ X ≦ 1) is mixed under the same conditions as in Embodiment 2 is obtained. In this embodiment, the stoichiometric ratio can be changed by arranging silicon and carbon targets in a finely dispersed manner and changing the amounts thereof. In this case, the target or the substrate was rotated in order to increase the uniformity of the formed film.

In the examples in this specification, a target to which phosphorus, boron or the like, which is an element imparting one conductivity type to a semiconductor, is used, but Si or Ge to which these impurities are not added is used. , Si _x Ge _1-X , Si _x C _1-X , (0
≤ X ≤ 1), Si, Ge, Si _x Ge
_{1-X, Si x C 1} -X, (0 ≦ X ≦ 1) may of course also be made of a semiconductor film such.

[0040]

According to the present invention, sputtering is performed using a semiconductor target to which an impurity having one conductivity type is added, in an atmosphere containing 30% or more of hydrogen in an inert atmosphere containing hydrogen. As a result, a semiconductor film having high conductivity and one conductivity type was obtained.

[Brief description of the drawings]

FIG. 1 shows an example of a sputtering apparatus used for realizing the method of the present invention.

FIG. 2 shows an example of the relationship between the conductivity of an N-type silicon semiconductor film obtained by the method of the present invention and the hydrogen partial pressure during film formation.

FIG. 3 shows an example of a Raman spectrum of an N-type silicon semiconductor film obtained by the method of the present invention.

FIG. 4 shows an example of a relationship between a film forming temperature of an N-type silicon semiconductor film obtained by the method of the present invention and XRD intensity.

FIG. 5 shows an example of the relationship between the film formation pressure and the XRD intensity of an N-type silicon semiconductor film obtained by the method of the present invention.

FIG. 6 shows an example of the relationship between input RF power and XRD intensity when forming an N-type silicon semiconductor film obtained by the method of the present invention.

Claims (6)

[Claims] 1. A semiconductor which sputters using a semiconductor target in an atmosphere containing hydrogen, forms a semiconductor film on a substrate, and anneals the semiconductor film obtained by the sputtering to promote crystallinity of the semiconductor film. A method for forming a film, wherein the temperature of the substrate is set to 200 ° C. or lower when performing the sputtering. 2. Sputtering is performed by using a semiconductor target in an atmosphere containing hydrogen and the oxygen concentration is 7 ×.
A semiconductor film manufacturing method for manufacturing a semiconductor film of 10 ¹⁹ cm ^-3 or less on a substrate, annealing the semiconductor film obtained by the sputtering to promote the crystallinity of the semiconductor film, and performing the sputtering. The temperature of the substrate is 2
A method for manufacturing a semiconductor film, which is performed at a temperature of 00 ° C. or lower. 3. A semiconductor in which sputtering is performed using a semiconductor target in an atmosphere containing hydrogen, a semiconductor film is formed over a substrate, and the semiconductor film obtained by the sputtering is annealed to promote crystallinity of the semiconductor film. A method for forming a film, wherein the substrate is set to a floating state when the sputtering is performed, and the temperature of the substrate is set to 200 ° C. or lower. 4. The method according to claim 1, wherein
A method for manufacturing a semiconductor film, wherein a partial pressure of the hydrogen is 30% or more of a total pressure of an atmosphere containing the hydrogen. 5. The method according to claim 1, wherein:
A method for manufacturing a semiconductor film, wherein a semiconductor target to which an element imparting one conductivity type is added is used as the semiconductor target. 6. The method according to claim 1, wherein
As the semiconductor target, single crystal or polycrystalline S
i, Ge, Si _x Ge _1-X (0 ≦ X ≦ 1) or Si _x C _{1 -X} (0
≦ X ≦ 1).