JP2001074569A - Planar capacitance type twist strain sensor - Google Patents

Planar capacitance type twist strain sensor

Info

Publication number
JP2001074569A
JP2001074569A JP24851699A JP24851699A JP2001074569A JP 2001074569 A JP2001074569 A JP 2001074569A JP 24851699 A JP24851699 A JP 24851699A JP 24851699 A JP24851699 A JP 24851699A JP 2001074569 A JP2001074569 A JP 2001074569A
Authority
JP
Japan
Prior art keywords
strain
strain sensor
torsional
detected
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP24851699A
Other languages
Japanese (ja)
Inventor
Tetsuo Yoshida
哲男 吉田
Toru Ueno
亨 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP24851699A priority Critical patent/JP2001074569A/en
Priority to PCT/JP2000/004538 priority patent/WO2001004593A1/en
Priority to CNB008018863A priority patent/CN1157594C/en
Priority to KR10-2001-7002948A priority patent/KR100421304B1/en
Priority to TW089113557A priority patent/TW432198B/en
Priority to EP00944327A priority patent/EP1113252A4/en
Priority to US09/786,944 priority patent/US6532824B1/en
Publication of JP2001074569A publication Critical patent/JP2001074569A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To simplify bonding onto a detected structure and handling, and to convert the level of twist strain from a change in the capacitance into a change in the frequency to facilitate signal processing. SOLUTION: In this sensor, a dielectric film layer 2 of which a dielectric constant changes by a strain is formed on one main face of a flexible rectangular plate type insulative sheet 1 using an insulative plastic to make its thickness substantially uniform, and a pair of electrode patterns are formed to have plural oblique line-like electrodes 3a, 4a extended in parallel to get alternately into each other while inclined by about 45' with respect to one direction where a detected structure is extended respectively from a pair of linear common electrodes 3, 4 opposed to a surface of the dielectric film layer 2, so as to provide capacitance. Capacitor terminals are connected to the common electrodes 3, 4, and the paired electrode patterns acts as a capacitor.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、主として被検出用
構造体に加わる捩り歪みを検出する捩り歪みセンサであ
って、詳しくは歪みにより誘電率が変化する誘電体膜層
の表面に形成した一対の電極パターンによるコンデンサ
静電容量の変化に基づいて被検出用構造体の弾性変形に
伴う捩り歪みの大きさを検出する平板型静電容量式捩り
歪みセンサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a torsional strain sensor mainly for detecting torsional strain applied to a structure to be detected, and more particularly, to a torsional strain sensor formed on a surface of a dielectric film layer whose dielectric constant changes due to strain. The present invention relates to a flat-plate capacitive torsional strain sensor for detecting the magnitude of torsional distortion accompanying elastic deformation of a structure to be detected based on a change in capacitance of a capacitor due to an electrode pattern.

【0002】[0002]

【従来の技術】従来、この種の捩り歪みセンサとして
は、平面又は曲面状の外面を有する板状又は柱状の一軸
方向に延在する被検出用構造体に加わる捩り歪みを検出
可能であって、歪みにより抵抗値が変化する所謂歪みゲ
ージが良く知られている。
2. Description of the Related Art Conventionally, this type of torsional strain sensor is capable of detecting a torsional strain applied to a plate-like or column-shaped structure to be detected extending in a uniaxial direction having a flat or curved outer surface. A so-called strain gauge whose resistance changes due to strain is well known.

【0003】図5は、従来の捩り歪みセンサ及びその適
用例を説明したもので、同図(a)は捩り歪みセンサと
して歪みゲージ23を被検出用構造体に接着した様子を
示した斜視図に関するもの,同図(a)は歪みゲージ2
3を拡大して示した斜視図に関するものである。
FIG. 5 illustrates a conventional torsional strain sensor and its application example. FIG. 5A is a perspective view showing a state in which a strain gauge 23 is bonded to a structure to be detected as a torsional strain sensor. (A) shows strain gauge 2
3 relates to an enlarged perspective view of FIG.

【0004】ここでは、図5(b)に示されるようなF
e−Ni系合金による薄膜パターンで形成された歪みゲ
ージ23を被検出用構造体として図5(a)に示される
ような一端が台座24に固定された円柱21の外周面2
2にその歪み検出軸が円柱21の延在する一軸(中心
軸)方向に対して45度傾いた方向に合致されるように
接着することにより、円柱21の捩り歪みを検出できる
ことを示している。
[0004] Here, as shown in FIG.
As shown in FIG. 5A, an outer peripheral surface 2 of a cylinder 21 having one end fixed to a pedestal 24 as a structure to be detected using a strain gauge 23 formed by a thin film pattern of an e-Ni-based alloy.
FIG. 2 shows that the torsion strain of the cylinder 21 can be detected by bonding such that the strain detection axis is aligned with a direction inclined by 45 degrees with respect to the direction of one axis (center axis) in which the cylinder 21 extends. .

【0005】こうした状態で歪みゲージ23により円柱
21の捩り歪みを検出する場合、円柱21に捩りモーメ
ントが加わって円柱21に捩り歪みが発生すると、歪み
ゲージ23が接着された部分に円柱21の中心軸方向に
対して45度傾いた方向の伸び歪みとこれと直角な方向
の圧縮歪みが発生するので、これらの伸び歪み及び圧縮
歪みに応じた抵抗値の変化を検出することで円柱21の
捩り歪みを検出することができる。
When the torsion of the cylinder 21 is detected by the strain gauge 23 in such a state, when a torsional moment is applied to the cylinder 21 to generate a torsional strain in the cylinder 21, the center of the cylinder 21 is attached to the portion where the strain gauge 23 is bonded. An elongational strain in a direction inclined by 45 degrees with respect to the axial direction and a compressive strain in a direction perpendicular thereto are generated. By detecting a change in resistance value according to the elongational strain and the compressive strain, the torsion of the cylinder 21 is detected. Distortion can be detected.

【0006】[0006]

【発明が解決しようとする課題】上述した捩り歪みセン
サとしての歪みゲージの場合、被検出用構造体に接着す
るときに歪み検出軸を被検出用構造体の延在する一軸方
向に対して45度傾いた方向に合致させる必要があるた
め、接着に高い精度が要求されて取り扱いが煩雑である
という問題がある他、原理的に伸び歪み及び圧縮歪みの
変化に応じて抵抗値が変化するものであるため、マイコ
ン等を用いて信号処理を行う場合にアナログ−ディジタ
ル変換回路が必要になる等、信号処理回路が複雑になっ
てしまうという欠点もある。
In the case of the above-described strain gauge as a torsional strain sensor, when the strain gauge is bonded to the structure to be detected, the strain detection axis is set at 45 with respect to one axial direction in which the structure to be detected extends. In addition to the problem that high precision is required for adhesion and handling is complicated because it is necessary to match the direction of inclination, the resistance value changes in principle according to the change in elongation strain and compression strain. Therefore, there is also a disadvantage that the signal processing circuit becomes complicated, for example, an analog-digital conversion circuit is required when performing signal processing using a microcomputer or the like.

【0007】本発明は、このような問題点を解決すべく
なされたもので、その技術的課題は、被検出用構造体へ
の接着並びに取り扱いが簡単であると共に、捩り歪みの
大きさを静電容量の変化から周波数の変化に変換して容
易に信号処理できる平板型静電容量式捩り歪みセンサを
提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and its technical problem is that it is easy to adhere to and handle a structure to be detected and to reduce the magnitude of torsional distortion. An object of the present invention is to provide a flat-plate capacitive torsional strain sensor capable of converting a change in capacitance into a change in frequency and easily performing signal processing.

【0008】[0008]

【課題を解決するための手段】本発明によれば、一軸方
向に延在する被検出用構造体に加わる捩り歪みを検出す
る捩り歪みセンサにおいて、可撓性を有する平板型絶縁
シートの一方の主面に厚さがほぼ一様となるように形成
された歪みにより誘電率が変化する誘電体膜層の表面に
対して、対向する一対の線状共通電極からそれぞれ一軸
方向に対して約45度傾いて互い違いに入り込むように
平行して延在する複数の斜線状電極を有するように一対
の電極パターンを形成して静電容量を具備した平板型静
電容量式捩り歪みセンサが得られる。
According to the present invention, there is provided a torsional strain sensor for detecting a torsional strain applied to a structure to be detected extending in a uniaxial direction. The surface of the dielectric film layer whose dielectric constant changes due to strain formed to have a substantially uniform thickness on the main surface is applied to the surface of the dielectric film layer by a pair of linear common electrodes facing each other by about 45 in the uniaxial direction. By forming a pair of electrode patterns so as to have a plurality of oblique lines extending in parallel so as to be staggered and staggered, a flat-plate type capacitance type torsional strain sensor having capacitance is obtained.

【0009】又、本発明によれば、上記平板型静電容量
式捩り歪みセンサにおいて、平板型絶縁シートの材質と
して、絶縁性のプラスチック又はセラミックスを用いた
平板型静電容量式捩り歪みセンサが得られる。
Further, according to the present invention, there is provided the above-mentioned flat capacitive torsion strain sensor, wherein the flat insulating sheet is made of an insulating plastic or ceramics. can get.

【0010】[0010]

【発明の実施の形態】以下に実施例を挙げ、本発明の平
板型静電容量式捩り歪みセンサについて、図面を参照し
て詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The flat-type capacitive torsional strain sensor of the present invention will be described below in detail with reference to the drawings.

【0011】図1は、本発明の一実施例に係る平板型静
電容量式捩り歪みセンサの基本構成を示したもので、同
図(a)は平面図に関するもの,同図(b)は側面図に
関するものである。
FIG. 1 shows the basic structure of a flat-plate type capacitive torsional strain sensor according to one embodiment of the present invention. FIG. 1 (a) relates to a plan view, and FIG. It relates to a side view.

【0012】この平板型静電容量式捩り歪みセンサは、
絶縁性のプラスチック(或いはセラミックスでも良い)
を用いた可撓性を有する矩形平板型絶縁シート1の一方
の主面上に厚さがほぼ一様となるように歪みにより誘電
率が変化する誘電体膜層2を厚膜として形成するか、或
いは薄膜状に形成し、この誘電体膜層2の表面に対して
対向する一対の線状共通電極3,4からそれぞれ被検出
用構造体の延在する一軸方向に対して約45度傾いて互
い違いに入り込むように平行して延在する複数の斜線状
電極3a,4aを有するように一対の電極パターンを形
成して静電容量を具備して成っている。
This flat-plate capacitive torsional strain sensor is:
Insulating plastic (or ceramics)
Is formed on one main surface of a flexible rectangular flat-type insulating sheet 1 using a dielectric film layer 2 whose dielectric constant changes due to strain so that the thickness becomes substantially uniform. Alternatively, it is formed in a thin film shape and is inclined by about 45 degrees from the pair of linear common electrodes 3 and 4 facing the surface of the dielectric film layer 2 with respect to the uniaxial direction in which the structure to be detected extends. A pair of electrode patterns are formed so as to have a plurality of diagonal electrodes 3a and 4a extending in parallel so as to alternately enter each other and have a capacitance.

【0013】ここでの線状共通電極3,4にはコンデン
サ端子が接続され、線状共通電極3及び斜線状電極3a
と線状共通電極4及び斜線状電極4aとによる一対の電
極パターンは静電容量を有するコンデンサとして働く。
更に、ここでの電極パターンの場合、線状共通電極3,
4が絶縁シート1の一つの対向する辺に沿って配備さ
れ、斜線状電極3a,4aがこれらの線状共通電極3,
4の延在方向に対してほぼ45度傾いて交差指状電極と
して形成されている。
Here, a capacitor terminal is connected to the linear common electrodes 3 and 4, and the linear common electrode 3 and the oblique line electrode 3a are connected.
And a pair of electrode patterns formed by the linear common electrode 4 and the oblique line electrode 4a function as a capacitor having a capacitance.
Further, in the case of the electrode pattern here, the linear common electrode 3,
4 are provided along one opposite side of the insulating sheet 1, and the oblique electrodes 3a, 4a
The electrode is formed as an interdigital electrode inclined at an angle of about 45 degrees with respect to the extension direction of the reference numeral 4.

【0014】このような平板型静電容量式捩り歪みセン
サでは、被検出用構造体に接着するときに絶縁シート1
の一つの対向する辺の方向を回転軸として捩り歪みを検
出することができるため、被検出用構造体への接着並び
に取り扱いが簡単であり、しかも被検出用構造体の弾性
変形に伴う捩り歪みの大きさを静電容量の変化から周波
数の変化に変換することが可能であるため、容易に信号
処理を行うことができる。
In such a flat plate type capacitance type torsional strain sensor, the insulating sheet 1 is bonded to the structure to be detected.
Since the torsional distortion can be detected using the direction of one of the opposite sides as the axis of rotation, it is easy to adhere to and handle the structure to be detected, and torsional distortion due to the elastic deformation of the structure to be detected. Can be converted from a change in capacitance to a change in frequency, so that signal processing can be easily performed.

【0015】図2は、こうした交差指状電極を含む平板
型静電容量式捩り歪みセンサによる歪み検出の原理を説
明するために示した電極パターンの平面図である。
FIG. 2 is a plan view of an electrode pattern shown for explaining the principle of strain detection by a flat-plate capacitive torsional strain sensor including such interdigital electrodes.

【0016】ここでの電極パターンは、長方形平板型絶
縁シート1′の対向する長辺の一方側に配置されると共
に、一端側にコンデンサ端子5が接続された線状共通電
極3′からその延在方向に対して垂直な方向に複数の線
状電極3a′が延在し、同様に絶縁シート1′の対向す
る長辺の他方側に配置されると共に、一端側にコンデン
サ端子6が接続された線状共通電極4′からその延在方
向に対して垂直な方向に複数の線状電極4a′が延在
し、これらの線状電極3a′,4a′が互い違いに入り
込むように平行して交差指状電極として形成されてい
る。
The electrode pattern here is disposed on one of the long sides of the rectangular flat insulating sheet 1 'opposite to each other, and extends from the linear common electrode 3' to which the capacitor terminal 5 is connected to one end. A plurality of linear electrodes 3a 'extend in a direction perpendicular to the existing direction. Similarly, the linear electrodes 3a' are arranged on the other long side of the insulating sheet 1 'opposite to each other, and a capacitor terminal 6 is connected to one end. A plurality of linear electrodes 4a 'extend in a direction perpendicular to the extending direction from the linear common electrode 4', and the linear electrodes 3a ', 4a' are arranged in parallel so as to alternately enter. It is formed as an interdigital electrode.

【0017】ここでは、長方形平板型絶縁シート1′と
して比較的可撓性に優れているジルコニア磁器製のもの
を用い、その表面上にセラミックコンデンサに使用され
ている鉛系の高誘電率の誘電体膜層2を形成し、更にそ
の上に線状共通電極3及び線状電極3a′と線状共通電
極4及び線状電極4a′とによる一対の電極パターンを
線状電極3a′,4a′の延在方向が長方形平板型絶縁
シート1′の短辺に平行となるように形成して静電容量
を有する1つのコンデンサを具備した平板型静電容量式
捩り歪みセンサを構成している。
Here, a rectangular flat insulating sheet 1 'made of zirconia porcelain having relatively excellent flexibility is used, and a lead-based high dielectric constant dielectric material used for a ceramic capacitor is provided on the surface thereof. A body film layer 2 is formed, and a pair of electrode patterns including a linear common electrode 3 and a linear electrode 3a 'and a linear common electrode 4 and a linear electrode 4a' are further formed on the linear electrodes 3a 'and 4a'. Is formed so that the extending direction is parallel to the short side of the rectangular flat type insulating sheet 1 ′ to constitute a flat type capacitive torsion strain sensor having one capacitor having a capacitance.

【0018】このような平板型静電容量式捩り歪みセン
サにおいて、長方形平板型絶縁シート1′を線状電極3
a′,4a′の延在方向と直角な方向に屈曲させると、
互いに隣り合う線状電極3a′,4a′間の相互の間隔
が変化するに伴い、電極面が凸状に変形する場合には誘
電体膜層2に伸び歪みが発生し、電極面が凹状に変形す
る場合には誘電体膜層2に圧縮歪みが発生する。
In such a flat plate type capacitive torsional strain sensor, the rectangular flat plate type insulating sheet 1 'is
When bent in a direction perpendicular to the extending direction of a 'and 4a',
When the electrode surface is deformed in a convex shape as the distance between the linear electrodes 3a 'and 4a' adjacent to each other changes, the dielectric film layer 2 undergoes elongation strain, and the electrode surface becomes concave. When deformed, compressive strain occurs in the dielectric film layer 2.

【0019】そこで、この平板型静電容量式捩り歪みセ
ンサを図3に示されるような加圧装置を用い、長方形平
板型絶縁シート1′を適当な長さに切断して長辺側の両
端部を支持した状態でその中央部をナイフエッジ状の加
圧板7で短辺方向に平行に加圧し、加圧力(g)−静電
容量変化率(%)特性を測定したところ、図4に示すよ
うな結果となった。但し、図4中における□印の特性は
電極面裏側を加圧した場合の測定値であり、△印の特性
は電極面を加圧した場合の測定値である。
Then, this flat plate type capacitive torsional strain sensor is cut into an appropriate length using a pressurizing device as shown in FIG. In the state where the portion is supported, the central portion is pressed in parallel with the short side direction by a knife-edge-shaped pressing plate 7 to measure the force (g) -capacitance change rate (%) characteristics. The results were as shown. In FIG. 4, the characteristics indicated by □ are measured values when the back side of the electrode surface is pressed, and the characteristics indicated by Δ are measured values when the electrode surface is pressed.

【0020】図4からは、電極面裏側を加圧した□印の
特性の場合には、電極間隔が大きくなるような変形であ
るにも拘らず、加圧力を大きくするに伴って静電容量の
値が大きくなっているが、反対に電極面を加圧した△印
の特性の場合には、電極間隔が小さくなるような変形で
あるにも拘らず、加圧力を大きくするに伴って静電容量
の値が小さくなっており、誘電体膜層2が歪みが印加さ
れた場合にその方向の誘電率が大きくなる所謂「正歪み
−誘電率特性」を有していることが判る。
From FIG. 4, it can be seen that in the case of the characteristics indicated by □ where the back side of the electrode surface is pressurized, the capacitance increases as the pressing force increases, despite the deformation that the electrode spacing increases. On the contrary, in the case of the characteristics indicated by the symbol △ where the electrode surface is pressed, the static It can be seen that the capacitance value is small and the dielectric film layer 2 has a so-called "positive strain-dielectric constant characteristic" in which the dielectric constant in that direction increases when a strain is applied.

【0021】従って、誘電体膜層2の材質として「歪み
−誘電率特性」の大きな材料を使用した場合には、コン
デンサ端子5,6間の静電容量の変化が単に電極間隔の
変化による静電容量の変化よりも大きくなる。
Therefore, when a material having a large "strain-permittivity characteristic" is used as the material of the dielectric film layer 2, a change in the capacitance between the capacitor terminals 5 and 6 is caused simply by a change in the electrode interval. It is larger than the change in capacitance.

【0022】ところで、捩り歪みは、捩り軸方向に対し
て+45度の方向の伸び歪みと−45度の方向の圧縮歪
みに分解することができるため、図1で説明した一実施
例の平板型静電容量式捩り歪みセンサの場合、捩り歪み
が正か負か(捩りの向き)により、斜線状電極3a,4
aの対向する方向の誘電率が変化し、コンデンサ端子間
の静電容量の値が変化し、この変化から発生している捩
り歪みの大きさを検出することができる。
Incidentally, the torsional strain can be decomposed into an elongation strain in the direction of +45 degrees and a compressive strain in the direction of -45 degrees with respect to the torsional axis direction. In the case of the capacitance type torsional strain sensor, the oblique lines 3a, 4 are determined depending on whether the torsional strain is positive or negative (the direction of the torsion).
The dielectric constant in the opposite direction of a changes, the value of the capacitance between the capacitor terminals changes, and the magnitude of the torsional distortion generated from this change can be detected.

【0023】尚、図1に示した一実施例の平板型静電容
量式捩り歪みセンサでは、1個のものを被検出用構造体
に用いて捩り歪みを検出する場合について説明したが、
同じセンサをもう1個用い、2つのセンサを互いに90
度の角度を成すように配置し、これらのセンサの検出出
力の差を検出する構成とすれば、検出感度をほぼ2倍に
でき、しかも、それぞれのセンサに共通に発生する不要
信号(例えば周囲温度変化に依存する特性変動等の成
分)をキャンセルすることができる。又、一実施例の平
板型静電容量式捩り歪みセンサでは、歪み−誘電率変化
特性を有する誘電体膜層2を形成するために絶縁シート
1を使用する場合について説明したが、シートの材質と
しては導電性を有する金属を用いた場合でも、誘電率の
低い絶縁体を介して誘電体膜層2を形成すれば同じ効果
が得られる。
In the meantime, in the embodiment of the flat type capacitive torsion strain sensor shown in FIG. 1, a case has been described in which one is used as a structure to be detected to detect torsional strain.
One more sensor is used and the two sensors are
If the sensors are arranged so as to form an angle of degrees and the difference between the detection outputs of these sensors is detected, the detection sensitivity can be almost doubled, and unnecessary signals (for example, surrounding signals) commonly generated in each sensor can be obtained. (A component such as a characteristic variation depending on a temperature change) can be canceled. In addition, in the flat-plate type capacitive torsional strain sensor according to the embodiment, the case where the insulating sheet 1 is used to form the dielectric film layer 2 having the strain-dielectric constant change characteristic has been described. Even if a conductive metal is used, the same effect can be obtained by forming the dielectric film layer 2 via an insulator having a low dielectric constant.

【0024】[0024]

【発明の効果】以上に示したように、本発明の平板型静
電容量式捩り歪みセンサによれば、可撓性を有する絶縁
シートを使用し、絶縁シート表面に歪みにより誘電率が
変化する誘電体膜層を形成し、更に誘電体膜層の表面に
一対の電極パターンを形成して静電容量を具備している
ため、被検出用構造体に接着するときに絶縁シートの一
つの対向する辺の方向を回転軸として柔軟に捩り歪みを
検出することができるため、被検出用構造体への接着並
びに取り扱いが簡単となり、しかも被検出用構造体の弾
性変形に伴う捩り歪みの大きさを静電容量の変化から周
波数の変化に変換することが可能となって容易に信号処
理を行うことができるようになる。結果として、被検出
用構造体の形状が平板状や棒状に限定されず、曲面状の
場合でも容易に接着並びに捩り歪みの検出が可能とな
り、構造が簡単で信号処理回路を簡単なLC発振回路で
構成することが可能となる。
As described above, according to the flat-plate-type capacitive torsional strain sensor of the present invention, a flexible insulating sheet is used, and the dielectric constant changes due to distortion on the surface of the insulating sheet. Since a dielectric film layer is formed, and a pair of electrode patterns are formed on the surface of the dielectric film layer to provide a capacitance, one of the insulating sheets is bonded to the structure to be detected. Since the torsional strain can be detected flexibly using the direction of the side to be rotated as the axis of rotation, it is easy to adhere to and handle the structure to be detected, and the magnitude of the torsional strain due to the elastic deformation of the structure to be detected. Can be converted from a change in capacitance to a change in frequency, and signal processing can be easily performed. As a result, the shape of the structure to be detected is not limited to a flat plate or a bar, but even if it is a curved surface, adhesion and torsional distortion can be easily detected, and the LC oscillation circuit has a simple structure and a simple signal processing circuit. Can be configured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例に係る平板型静電容量式捩り
歪みセンサの基本構成を示したもので、(a)は平面図
に関するもの,(b)は側面図に関するものである。
FIGS. 1A and 1B show a basic configuration of a flat-plate capacitive torsional strain sensor according to an embodiment of the present invention, wherein FIG. 1A is related to a plan view and FIG. 1B is related to a side view.

【図2】交差指状電極を含む平板型静電容量式捩り歪み
センサによる歪み検出の原理を説明するために示した電
極パターンの平面図である。
FIG. 2 is a plan view of an electrode pattern shown for explaining the principle of strain detection by a flat-plate capacitive torsional strain sensor including interdigital electrodes.

【図3】図2に示す平板型静電容量式捩り歪みセンサを
加圧する加圧装置を簡略的に示した側面図である。
FIG. 3 is a side view schematically showing a pressing device that presses the flat-plate-type capacitive torsional strain sensor shown in FIG. 2;

【図4】図3に示す加圧装置により加圧した状態で平板
型静電容量式捩り歪みセンサにおける加圧力−静電容量
変化率特性を測定した結果を示したものである。
FIG. 4 is a graph showing a result of measurement of a pressing force-capacitance change rate characteristic in a flat-plate capacitive torsional strain sensor in a state where the pressure is applied by the pressing device shown in FIG. 3;

【図5】従来の捩り歪みセンサ及びその適用例を説明し
たもので、(a)は捩り歪みセンサとして歪みゲージを
被検出用構造体に接着した様子を示した斜視図に関する
もの,(b)は歪みゲージを拡大して示した斜視図に関
するものである。
5A and 5B illustrate a conventional torsional strain sensor and an application example thereof, wherein FIG. 5A is a perspective view showing a state in which a strain gauge is bonded to a structure to be detected as a torsional strain sensor, and FIG. Is related to an enlarged perspective view of a strain gauge.

【符号の説明】[Explanation of symbols]

1,1′ 絶縁シート 2 誘電体膜層 3,4,3′,4′ 線状共通電極 3a,4a 斜線状電極 3a′,4a′ 線状電極 5,6 コンデンサ端子 7 加圧板 21 円柱 22 外周面 23 歪みゲージ 24 台座 DESCRIPTION OF SYMBOLS 1, 1 'Insulating sheet 2 Dielectric film layer 3, 4, 3', 4 'Linear common electrode 3a, 4a Diagonal electrode 3a', 4a 'Linear electrode 5, 6 Capacitor terminal 7 Pressure plate 21 Column 22 Outer periphery Surface 23 strain gauge 24 pedestal

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 一軸方向に延在する被検出用構造体に加
わる捩り歪みを検出する捩り歪みセンサにおいて、可撓
性を有する平板型絶縁シートの一方の主面に厚さがほぼ
一様となるように形成された歪みにより誘電率が変化す
る誘電体膜層の表面に対して、対向する一対の線状共通
電極からそれぞれ前記一軸方向に対して約45度傾いて
互い違いに入り込むように平行して延在する複数の斜線
状電極を有するように一対の電極パターンを形成して静
電容量を具備したことを特徴とする平板型静電容量式捩
り歪みセンサ。
1. A torsional strain sensor for detecting torsional strain applied to a structure to be detected extending in a uniaxial direction, wherein a thickness of the flexible flat insulating sheet is substantially uniform on one main surface thereof. With respect to the surface of the dielectric film layer in which the dielectric constant changes due to the strain formed so as to be inclined from the pair of linear common electrodes facing each other at about 45 degrees with respect to the uniaxial direction so as to enter alternately. A pair of electrode patterns are formed so as to have a plurality of obliquely extending electrodes extending in a direction, and a capacitance is provided.
【請求項2】 請求項1記載の平板型静電容量式捩り歪
みセンサにおいて、前記平板型絶縁シートの材質とし
て、絶縁性のプラスチック又はセラミックスを用いたこ
とを特徴とする平板型静電容量式捩り歪みセンサ。
2. The flat capacitive torsional strain sensor according to claim 1, wherein an insulating plastic or ceramic is used as a material of the flat insulating sheet. Torsional strain sensor.
JP24851699A 1999-07-09 1999-09-02 Planar capacitance type twist strain sensor Withdrawn JP2001074569A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP24851699A JP2001074569A (en) 1999-09-02 1999-09-02 Planar capacitance type twist strain sensor
PCT/JP2000/004538 WO2001004593A1 (en) 1999-07-09 2000-07-07 Capacitive strain sensor and method for using the same
CNB008018863A CN1157594C (en) 1999-07-09 2000-07-07 Capacitive strain sensor and method for using same
KR10-2001-7002948A KR100421304B1 (en) 1999-07-09 2000-07-07 Capacitive strain sensor and method for using the same
TW089113557A TW432198B (en) 1999-07-09 2000-07-07 The static capacitor type strain detector with the used same
EP00944327A EP1113252A4 (en) 1999-07-09 2000-07-07 Capacitive strain sensor and method for using the same
US09/786,944 US6532824B1 (en) 1999-07-09 2000-07-07 Capacitive strain sensor and method for using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24851699A JP2001074569A (en) 1999-09-02 1999-09-02 Planar capacitance type twist strain sensor

Publications (1)

Publication Number Publication Date
JP2001074569A true JP2001074569A (en) 2001-03-23

Family

ID=17179359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24851699A Withdrawn JP2001074569A (en) 1999-07-09 1999-09-02 Planar capacitance type twist strain sensor

Country Status (1)

Country Link
JP (1) JP2001074569A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003019104A1 (en) * 2001-08-24 2003-03-06 The Circle For The Promotion Of Science And Engineering Strain detector
GB2423822A (en) * 2005-03-02 2006-09-06 Automotive Electronics Ltd Ab Capacitive proximity sensor with reduced sensitivity to water trickles
JP2006330082A (en) * 2005-05-23 2006-12-07 Fujifilm Holdings Corp Curvature-detecting apparatus and flexible apparatus
JP2009109337A (en) * 2007-10-30 2009-05-21 Minebea Co Ltd Bend sensor
KR100902503B1 (en) * 2002-08-12 2009-06-15 삼성전자주식회사 High capacitance capacitor having multi vertical structure
KR101813230B1 (en) * 2016-07-21 2017-12-29 건국대학교 산학협력단 Pressure sensor and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003019104A1 (en) * 2001-08-24 2003-03-06 The Circle For The Promotion Of Science And Engineering Strain detector
KR100902503B1 (en) * 2002-08-12 2009-06-15 삼성전자주식회사 High capacitance capacitor having multi vertical structure
GB2423822A (en) * 2005-03-02 2006-09-06 Automotive Electronics Ltd Ab Capacitive proximity sensor with reduced sensitivity to water trickles
JP2006330082A (en) * 2005-05-23 2006-12-07 Fujifilm Holdings Corp Curvature-detecting apparatus and flexible apparatus
JP2009109337A (en) * 2007-10-30 2009-05-21 Minebea Co Ltd Bend sensor
KR101813230B1 (en) * 2016-07-21 2017-12-29 건국대학교 산학협력단 Pressure sensor and method of manufacturing the same

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