JP2001068480A5 - - Google Patents
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- JP2001068480A5 JP2001068480A5 JP2000182300A JP2000182300A JP2001068480A5 JP 2001068480 A5 JP2001068480 A5 JP 2001068480A5 JP 2000182300 A JP2000182300 A JP 2000182300A JP 2000182300 A JP2000182300 A JP 2000182300A JP 2001068480 A5 JP2001068480 A5 JP 2001068480A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000182300A JP4611492B2 (en) | 1999-06-23 | 2000-06-13 | Semiconductor device and semiconductor integrated circuit |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-177032 | 1999-06-23 | ||
| JP17703299 | 1999-06-23 | ||
| JP2000182300A JP4611492B2 (en) | 1999-06-23 | 2000-06-13 | Semiconductor device and semiconductor integrated circuit |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001068480A JP2001068480A (en) | 2001-03-16 |
| JP2001068480A5 true JP2001068480A5 (en) | 2007-05-31 |
| JP4611492B2 JP4611492B2 (en) | 2011-01-12 |
Family
ID=26497711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000182300A Expired - Fee Related JP4611492B2 (en) | 1999-06-23 | 2000-06-13 | Semiconductor device and semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4611492B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1265294A3 (en) * | 2001-06-07 | 2004-04-07 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor |
| US7170112B2 (en) * | 2002-10-30 | 2007-01-30 | International Business Machines Corporation | Graded-base-bandgap bipolar transistor having a constant—bandgap in the base |
| JP3959695B2 (en) | 2003-01-14 | 2007-08-15 | 松下電器産業株式会社 | Semiconductor integrated circuit |
| JP4850398B2 (en) * | 2004-08-31 | 2012-01-11 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
| JP4829566B2 (en) * | 2005-08-30 | 2011-12-07 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0666321B2 (en) * | 1987-06-02 | 1994-08-24 | 日本電気株式会社 | Heterojunction bipolar transistor |
| JPH0656853B2 (en) * | 1987-06-24 | 1994-07-27 | 日本電気株式会社 | Heterojunction bipolar transistor |
| JP2600485B2 (en) * | 1990-11-28 | 1997-04-16 | 日本電気株式会社 | Semiconductor device |
| JPH04332132A (en) * | 1991-05-02 | 1992-11-19 | Sumitomo Electric Ind Ltd | Meterojunction bipolar transistor |
| JPH05304165A (en) * | 1992-04-27 | 1993-11-16 | Nippon Telegr & Teleph Corp <Ntt> | Hetero-junction transistor |
| JPH08288300A (en) * | 1995-04-12 | 1996-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Heterojunction bipolar transistor |
| JPH08288298A (en) * | 1995-04-20 | 1996-11-01 | Mitsubishi Electric Corp | Ballast resistance and heterojunction bipolar transistor |
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2000
- 2000-06-13 JP JP2000182300A patent/JP4611492B2/en not_active Expired - Fee Related