JP2001058898A - Uniform transportation reaction tube of raw material gas for semiconductor wafer vapor-phase growth - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a uniform transportation reaction tube of raw material gas for semiconductor wafer vapor-phase growth, capable of uniformly supplying a raw material gas to the surface of a semiconductor wafer in a vapor-phase growth process of semiconductor wafer. SOLUTION: This reaction tube is equipped with plural reaction chambers 1a and 1b which are formed in hollow shapes, store wafer substrates 5a and 5b in the interiors, open raw material inlets 3a and 3b, to which raw material gases 2a and 2b are supplied, at one end of each chamber and an outlet 9 for discharging the raw material gases 2a and 2b at the other end and are mutually connected at the adjacently arranged side and with plural sets of a pair of separators 6a1to 6b2 which are laid in the interiors of the plural reaction chambers 1a and 1b, in parallel with the flows of the raw material gases 2a and 2b and at both the sides with laying the wafer substrates 5a and 5b between.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer, and more particularly to a uniform reaction gas source for vapor-phase growth of a semiconductor wafer for vapor-phase growth of semiconductor crystals on the surface of a wafer substrate. It relates to a transport reaction tube.

[0002]

2. Description of the Related Art One of the manufacturing processes of a semiconductor wafer is a vapor growth process for vapor-growing a semiconductor crystal on a wafer substrate. In order to manufacture a semiconductor having good characteristics, it is necessary to grow crystals uniformly over the entire wafer surface in this vapor phase growth step.

[0003] That is, it is an important issue to uniformly supply a source gas for forming a crystal over the entire surface of a wafer substrate. In particular, when a plurality of wafer substrates are simultaneously grown in vapor phase, it is necessary to minimize the variation in the supply amount of the source gas among the plurality of wafer substrates.

[0004] In order to realize this problem, a source gas transport reaction tube for vapor phase growth of a semiconductor wafer has conventionally been provided.

Japanese Unexamined Patent Publication (Kokai) No. 6-295862 discloses a semiconductor manufacturing apparatus for simultaneously growing a plurality of semiconductor wafers in a vapor phase, and the technique described in the publication will be described as a conventional example.

FIG. 10 is a front sectional view of a conventional semiconductor manufacturing apparatus. In the reaction tube 103 shown in FIG. 10, the raw material gas supplied from the gas supply ports 106a to 106c passes through the mesh 128 to make the flow rate uniform, and
The wafer is supplied onto a plurality of wafers 102a and 102b placed on the wafer 1 and vapor-deposited from the exhaust port 108 after a semiconductor crystal is vapor-phase grown on the surfaces of the wafers 102a and 102b.

As described above, in the conventional example, a plurality of wafers 10
2a and 102b are housed side by side inside one reaction tube 103, and the source gas is supplied to the plurality of wafers 102a and 102b from the plurality of gas supply ports 106a to 106c.

[0008]

However, the conventional example has the following problems.

First, each wafer 102a, 102
b had the problem that the source gas could not be supplied uniformly over the entire surface.

FIG. 11 is a flow velocity distribution diagram along the line XX 'in the conventional semiconductor manufacturing apparatus of FIG. FIG.
As shown in (1), the flow velocity distribution of the source gas along the line XX 'is not uniform over the entire region where the wafers 102a and 102b exist.

The first reason is that, as shown in FIG. 10, adjacent gas supply ports 106a to 106a inside the reaction tube 103.
When a plurality of source gases supplied from 6c merge, the respective flow rates are slightly different, so that a discontinuous surface of the source gas flow rate is formed. Since the position and the state of occurrence of the discontinuous surface are unstable, the reaction tube 10 is placed around the discontinuous surface.
Turbulence generation regions 107ab and 107bc, which are regions in which the flow of the source gas inside 3 is turbulent, expand toward the downstream. If the turbulence generation regions 107ab and 107bc reach the wafers 102a and 102b, the source gas cannot be uniformly supplied to the surfaces of the wafers 102a and 102b.

The second reason is that the raw material gas and the reaction tube 10
Due to the viscous friction with the third wall surfaces 103a, 103b, the flow velocity boundary surfaces 104a, 104b, which are the boundary surfaces of the flow velocity of the raw material gas, spread from the wall surfaces 103a, 103b toward the downstream. The flow velocity boundary surfaces 104a and 104b correspond to the wafer 1
This is because the source gas cannot be uniformly supplied to the surfaces of the wafers 102a and 102b if the gas flows on the wafers 102a and 102b.

Second, as long as the flow rate and the flow rate of the source gas are kept constant, the source gas is transferred to the wafers 102a and 102a.
Although it can be supplied uniformly to the surface of the wafer 2b to some extent, when the flow rate and the flow velocity are changed, the flow of the raw material gas changes drastically, and there is a problem that it is not possible to supply the wafers 102a and 102b uniformly. there were.

The reason is that the rate of vapor phase growth of semiconductor crystals on the wafers 102a and 102b is controlled by the flow rate and flow rate of the raw material gas. This is because the vortex distribution and the vorticity distribution are greatly changed, and the generation regions of the flow velocity boundary surfaces 104a and 104b and the turbulence generation regions 107ab and 107bc cannot be estimated at all.

Here, the present invention provides a source gas uniform transport reaction tube for semiconductor wafer vapor phase growth, which can uniformly supply a source gas to the surface of the semiconductor wafer in a semiconductor wafer vapor phase growth step.

[0016]

In order to solve the above-mentioned problems, the present invention employs the following novel characteristic methods and means.

A first feature of the reaction tube for uniformly transporting source gas for semiconductor wafer vapor phase growth of the present invention is that it is formed in a hollow shape and accommodates wafer substrates (5a and 5b in FIG. 1) therein.
Opened at one end is a raw material inlet (3a, 3b) to which the raw material gas (2a, 2b) is supplied, and at the other end is a raw material gas (2a, 2b).
a plurality of reaction chambers (1a, 1b), which are provided with an exhaust port (9) for exhausting b) and are arranged adjacent to each other and communicate with each other on the side surface;
b), a plurality of sets of a pair of separators (6a1 to 6b) arranged in parallel with the flow of the source gases (2a, 2b) and on both sides of the wafer substrate (5a, 5b).
2).

A second feature of the reaction tube for uniformly transporting source gas for semiconductor wafer vapor phase growth of the present invention is that it is formed in a hollow shape, accommodates a wafer substrate (5a) inside, and has a source gas (2a) at one end. A reaction chamber (1a) having an opening at a raw material inlet (3a) through which the raw material gas is supplied, and an exhaust port (9) at the other end for discharging a raw material gas (2a);
In (a), a pair of separators (6a1, 6a2) arranged parallel to the flow of the source gas (2a) and on both sides of the wafer substrate (5a) is provided.

By adopting such means, the source gas uniform transport reaction tube for semiconductor wafer vapor phase growth of the present invention is arranged parallel to the flow of the source gas, and is arranged so as to sandwich the wafer substrate from both sides. By providing the separator, the source gas can be uniformly supplied over the entire surface of each wafer substrate without being affected by the turbulent flow generation region or the flow velocity boundary surface.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1 is a right side sectional view of a source gas uniform transport reaction tube for vapor phase growth of a semiconductor wafer according to a first embodiment of the present invention, and FIG. 1 is a front sectional view taken along line II ′ of a reaction tube for uniformly transporting source gas for semiconductor wafer vapor phase growth according to one embodiment.

The reaction tube 1 shown in FIGS. 1 and 2 includes a reaction chamber 1a, 1b, a junction 1e, and raw material inlets 3a, 3a.
b, separators 6a1-6b2, and an exhaust port 9.

The reaction tube 1 accommodates the wafers 5a and 5b in the reaction chambers 1a and 1b, respectively, and supplies the source gases 2a and 2b to the wafers 5a and 5b.
Is a device for growing a semiconductor crystal on the surface of a semiconductor device.

The reaction chambers 1a and 1b are each formed in a hollow cylindrical shape as shown in FIGS. 1 and 2 and communicate with each other on the side surfaces, and accommodate the wafers 5a and 5b for growing a semiconductor crystal in vapor phase, respectively. are doing.

The merging portion 1e is a connecting portion of the reaction chambers 1a and 1b extending from the raw material inlets 3a and 3b, and merges the raw material gases 2a and 2b inside the reaction chambers 1a and 1b.

The raw material inlets 3a, 3b are connected to the wafers 5a, 5b
Gas 2a, 2 for vapor-phase growing semiconductor crystals on the surface of
b is an opening formed to introduce b into each of the reaction chambers 1a and 1b.

The separators 6a1 and 6a2 are members provided so as to sandwich the wafer 5a housed in the reaction chamber 1a from both sides and in parallel with the flow of the source gas 2a.

The separators 6b1 and 6b2 are members provided so as to sandwich the wafer 5b housed in the reaction chamber 1b from both sides and in parallel with the flow of the source gas 2b.

These separators 6a1 to 6b2 are made of a material on the surface of which semiconductor crystals can be grown in a vapor phase, like the wafers 5a and 5b. The reason is that if the separators 6a1 to 6b2 are formed of a material that cannot be vapor-phase grown on the surface thereof, the chemical reaction of the raw materials will also occur on the surfaces of the separators 6a1 to 6b2 heated with the heating inside the reaction tube 1. Occurs, and the product is separated by the separator 6a1
6b2 without adhering to the source gases 2a and 2b and adhering as impurities on the wafers 5a and 5b, preventing the gas phase growth reaction of the wafers 5a and 5b,
This is because this impurity is mixed with b and a problem such as a decrease in yield occurs. Therefore, this separator 6a1
6b2 may be formed from the same material as the wafers 5a and 5b. Specifically, it is desirable that the semiconductor material be formed of silicon or gallium = arsenic compound or the like.

The exhaust port 9 is an opening for exhausting the raw material gas 2a, 2b that has passed through the inside of the reaction tube 1, and has an opening at an end opposite to the raw material inlets 3a, 3b of the reaction tube 1. Have been.

Next, the flow of the source gases 2a and 2b will be described.

As shown in FIG. 1, the source gases 2a, 2b
Are introduced from the raw material inlets 3a and 3b, respectively, merge after passing through the merging portion 1e, flow inside the reaction chambers 1a and 1b rightward in FIG.

As described above, when the plurality of source gases 2a and 2b merge after passing the junction 1e, each of the source gases 2b and 2b
Are slightly different from each other, so that the raw material gas 2a,
2b, these source gases 2a, 2b
It is inevitable that a turbulent flow will occur at the boundary surface of b. In addition, a turbulence generation region 7ab where this turbulence occurs
Spreads toward the downstream side.

Further, the inner wall 1a1 of the reaction tube 1 and the raw material gas 2
flow velocity boundary surface 4 from inner wall 1a1 due to viscous friction with
a1 spreads downstream. Similarly, the viscous friction between the inner wall 1b2 of the reaction tube 1 and the raw material gas 2b causes the inner wall 1b
From b2, the flow velocity boundary surface 4b2 spreads downstream.

Therefore, in the present embodiment, the source gases 2a,
By installing the plate-shaped separators 6a1 to 6b2 parallel to 2b and on both sides of the wafers 5a and 5b, the turbulence generation region 7ab and the flow velocity boundary surfaces 4a1 and 4b2 do not overlap the wafers 5a and 5b. In isolation.

FIG. 3 is a flow rate distribution diagram along the II ′ line in the reaction tube for uniformly transporting source gas for vapor phase growth of a semiconductor wafer according to the embodiment of FIG.

By adopting such a configuration,
As shown in FIG. 3, the flow rates of the source gases 2a and 2b can be maintained uniform over the entire region where the wafers 5a and 5b are present.

Incidentally, these separators 6a1-6
b2, these separators-6a1
The flow velocity boundary surfaces 4a1a to 4b2b also spread downstream from the separator 6a1.
The spread width of each of the flow velocity boundary surfaces 4a1a to 4b2b with respect to the respective distances from the leading edge of the flow velocity boundary to the flow velocity boundary layer thickness can be estimated by a formula for calculating the flow velocity boundary layer thickness.

Therefore, these separators 6a1-6b
The separators 6a1 to 6b2 may be arranged at a certain interval from the wafers 5a and 5b so as not to cover the flow velocity boundary surfaces 4a1a to 4b2b expanding from 2.

Also, by limiting the length of the separators 6a1-6b2 to the necessary minimum, the raw material gases 2a, 2b
Friction between the gas and the separators 6a1 to 6b2 can be suppressed to a minimum, and the source gases 2a and 2b can be discharged smoothly. (Second Embodiment) FIG. 4 is a right side sectional view of a reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer according to a second embodiment of the present invention. 1a to 1d are reaction chambers, 2a
To 2d are source gases, 3a to 3d are source inlets, 4a1, 4
d2 is a flow velocity boundary surface, 5a to 5d are wafers, 6a1 to 6d
2 is a separator, 7ab to 7cd are turbulence generation regions, 9
Is an exhaust port.

In the reaction tube 1 of the present embodiment shown in FIG.
The four reaction chambers 1a to 1d are arranged adjacent to each other, and the adjacent side surfaces are opened to communicate with each other, so that the four wafers 5a to 5d can be housed therein.

In this embodiment, four wafers 5a to 5a
The source gases 2a to 2d can be uniformly supplied to the entire surface of each of the d. (Third Embodiment) FIG. 5 is a right side sectional view of a reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to a third embodiment of the present invention, and FIG. 6 is a semiconductor according to the third embodiment of the present invention. FIG. 4 is a partially enlarged right cross-sectional view of tapered separators 10a1 to 10b2 in a raw material gas uniform transport reaction tube for wafer vapor phase growth.

In the reaction tube 1 of the present embodiment shown in FIGS. 5 and 6, the raw material inlet of the reaction tube 1 is replaced with the plate-like separators 6a1 to 6b2 used in the first and second embodiments. Tapered separators 10a1 to 10b2 formed in a tapered shape toward the 3a and 3b sides are used.

FIG. 7 shows VV 'in the reaction tube for uniformly transporting source gas for vapor phase growth of semiconductor wafers according to the embodiment of FIG.
It is a flow velocity distribution diagram along a line, V ''-V '''line.

Tapered separators 10a1-10
At the inlet of b2, the flow rates of the source gases 2a and 2b are as shown by the solid lines in FIG.

Here, when the plate-like separators 6a1 to 6b2 of the first embodiment are used, the raw material gas 2
Due to viscous friction between the surfaces of the separators 6a1 to 6b2 and the raw material gases 2a,
As the flow velocity of 2b decreases, the flow of source gases 2a and 2b becomes unstable, and turbulence tends to occur.

Therefore, in the present embodiment, by employing the tapered separators 10a1 to 10b2,
Source gas 2a introduced between the tapered separators 10a1 and 10a2, source gas 2b introduced between the tapered separators 10b1 and 10b2
Are increased, and the respective flow rates are increased as shown by the broken lines in FIG.

Since the flow rates of the source gases 2a and 2b increase as described above, the width of the flow velocity boundary surfaces 4a1b, 4a2a, 4b1b and 4b2b can be reduced as compared with the first embodiment. The gas 2a, 2b can be more stably supplied to the entire surface of the wafers 5a, 5b. (Fourth Embodiment) FIG. 8 is a front sectional view of a reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to a fourth embodiment of the present invention.

The reaction tube for uniformly transporting source gas for semiconductor wafer vapor phase growth of the present embodiment shown in FIG. 8 is different from the reaction tube 1 of the first embodiment of the present invention shown in FIG. Is a configuration in which the cross-sectional shape is changed from a hollow circular shape to a hollow rectangular shape. Further, these reaction chambers 1a, 1b
Can be arbitrarily selected.

Thus, the reaction tube 1, the reaction chamber 1
The cross-sectional shapes of a to 1d can be arbitrarily selected. (Fifth Embodiment) FIG. 9 is a right side sectional view of a reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to a fifth embodiment of the present invention.

The reaction tube for uniformly transporting source gas for semiconductor wafer vapor phase growth of the present embodiment shown in FIG. 9 is limited to only one reaction chamber 1a in the reaction tube 1 of the embodiment of FIG. Corresponding to one set of separators 6a1,
6a2, and the other components are limited to one each.

As shown in FIG. 9, since only one reaction chamber 1a is used in this configuration, the source gas 2a does not merge and no turbulence generation region occurs, but the flow velocity spreading from the inner walls 1a1 and 1a2 of the chamber 1a is increased. Boundary surfaces 4a1, 4a
2 can be isolated from the wafer 5a, so that the flow velocity can be maintained uniformly over the entire surface of the wafer 5a.

The above embodiments may be arbitrarily combined.

The number of the reaction chambers 1a to 1d is arbitrary.

[0054]

By adopting the above means, the reaction tube for uniformly transporting source gas for vapor phase growth of semiconductor wafers of the present invention exhibits the following effects.

First, there is an advantage that the source gas can be supplied uniformly and symmetrically over the entire surface of the wafer.

The reason is that the use of the separator allows the wafer to be isolated from the turbulent flow generation region and the flow velocity boundary surface, and that the distribution of the flow velocity of the raw material gas is symmetric with respect to the flow direction of the raw material gas.

Second, even when a plurality of source gases are supplied, there is an advantage that turbulence does not occur and the source gases can be supplied uniformly over the entire surface of a plurality of wafers.

The reason is that the use of the separator allows the wafer to be isolated from the turbulence generation region generated when a plurality of source gases merge.

Third, there is an advantage that the source gas can be uniformly supplied to the entire surface of a plurality of wafers even when the flow rate and the flow rate of the source gas are changed.

The reason is that even if the flow rate and flow rate of the source gas are changed to change the flow of the source gas inside the reaction tube, the use of the separator allows the wafer to be removed from the turbulent flow generation region and the flow velocity boundary surface. Because they can always be isolated.

[Brief description of the drawings]

FIG. 1 is a right side sectional view of a reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to a first embodiment of the present invention.

FIG. 2 is a sectional front view taken along line II ′ of the reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to the embodiment of FIG. 1;

FIG. 3 is a flow velocity distribution diagram along a line II ′ in a reaction tube for uniformly transporting source gas for semiconductor wafer vapor phase growth according to the embodiment of FIG. 1;

FIG. 4 is a right side sectional view of a reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to a second embodiment of the present invention.

FIG. 5 is a right side sectional view of a reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to a third embodiment of the present invention.

6 is a partially enlarged right cross-sectional view of the tapered separators 10a1 to 10b2 in the reaction tube for uniformly transporting source gas for semiconductor wafer vapor phase growth of the embodiment of FIG.

FIG. 7 is a line VV ′, V ″-in the reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to the embodiment of FIG. 5;
It is a flow velocity distribution diagram along a V '''line.

FIG. 8 is a front sectional view of a source gas uniform transport reaction tube for vapor-phase growth of a semiconductor wafer according to a fourth embodiment of the present invention.

FIG. 9 is a right side sectional view of a reaction tube for uniformly transporting source gas for vapor phase growth of a semiconductor wafer according to a fifth embodiment of the present invention.

FIG. 10 is a front sectional view of a conventional semiconductor manufacturing apparatus.

FIG. 11 is a cross-sectional view of the conventional semiconductor manufacturing apparatus shown in FIG.
It is a flow velocity distribution diagram along the -X 'line.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Reaction tube 1a-1d Reaction chamber 1a1, 1a2, 1b1 Inner wall 1e Merging part 2a-2d Source gas 3a-3d Source inlet 4a1, 4a2, 4b2, 4d2, 4a1a-4b2b
Velocity boundary surface 5a-5d Wafer 6a1-6d2 Separator 7ab-7cd Turbulence generation region 9 Exhaust port 10a1-10b2 Tapered separator 101 Support base 102a, 102b Wafer 103 Reaction tube 103a, 103b Inner wall 104a, 104b Flow boundary surface 106a- 106c Gas supply port 107ab, 107bc Turbulence generation area 108 Exhaust port 128 mesh

Claims (25)

[Claims] 1. A raw material inlet which is formed in a hollow shape, accommodates a wafer substrate therein, is supplied with a raw material gas at one end, and has an exhaust port which exhausts the raw material gas at the other end.
A plurality of reaction chambers which are arranged adjacent to each other and communicate with each other on the side surface; and a plurality of pairs of a plurality of sets arranged inside the plurality of reaction chambers, which are arranged in parallel with the flow of the source gas and on both sides of the wafer substrate. A raw material gas uniform transport reaction tube for semiconductor wafer vapor phase growth, comprising a separator. 2. The reaction tube according to claim 1, wherein said reaction chamber has a hollow circular cross section from said one end to said other end. . 3. The reaction tube according to claim 1, wherein the reaction chamber has a hollow rectangular cross section from the one end to the other end. . 4. The reaction tube according to claim 1, wherein the pair of separators are formed in a flat plate shape. 5. The raw material gas uniform for vapor-phase growth of a semiconductor wafer according to claim 1, wherein said pair of separators are formed in a tapered shape toward said one end. Transport reaction tubes. 6. The method according to claim 1, wherein the pair of separators are arranged at positions where the pair of separators shield the wafer substrate from a flow velocity boundary surface of the source gas spreading from an inner wall of the reaction chamber. 12. A reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer according to any one of the above. 7. The pair of separators, for each of the reaction chambers, a turbulent boundary between the source gas flowing through the reaction chamber and the source gas flowing through the reaction chamber adjacent to the reaction chamber. 7. The reaction tube according to claim 1, wherein the reaction tube is disposed at a position where the wafer substrate is shielded from a flow generation region. 8. The pair of separators are arranged at positions where the wafer substrate does not hang on the flow velocity boundary of the source gas spreading from the surfaces of the pair of separators with respect to each of the reaction chambers. The reaction tube for uniformly transporting source gas for vapor-phase growth of a semiconductor wafer according to any one of claims 1 to 7, characterized in that: 9. The source gas for vapor-phase growth of a semiconductor wafer according to claim 1, wherein the pair of separators are formed of a material capable of growing the source gas. Uniform transport reaction tube. 10. The raw material gas uniform transport reaction for vapor-phase growth of a semiconductor wafer according to claim 1, wherein the pair of separators are formed of the same material as the wafer substrate. tube. 11. The method according to claim 1, wherein the pair of separators is formed of a semiconductor material.
12. A reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer according to any one of the above. 12. The reaction tube according to claim 1, wherein the pair of separators is formed of silicon. 13. The reaction tube according to claim 1, wherein the pair of separators is formed of a gallium-arsenic compound. 14. A reaction chamber formed in a hollow shape, accommodating a wafer substrate therein, having an opening at one end to which a raw material gas is supplied, and an opening at the other end to exhaust the raw material gas. And a pair of separators disposed inside the reaction chamber and parallel to the flow of the source gas and disposed on both sides of the wafer substrate. Uniform transport reaction tube. 15. The reaction tube according to claim 14, wherein the reaction chamber has a hollow circular cross section from one end to the other end. . 16. The reaction tube according to claim 14, wherein the reaction chamber has a hollow rectangular cross section from the one end to the other end. . 17. The reaction tube according to claim 14, wherein the pair of separators are formed in a flat plate shape. 18. The raw material gas for semiconductor wafer vapor phase growth according to claim 14, wherein the pair of separators are formed in a tapered shape toward the one end. Transport reaction tubes. 19. The apparatus according to claim 14, wherein the pair of separators are arranged at positions where the pair of separators shield the wafer substrate from a flow velocity boundary surface of the source gas spreading from an inner wall of the reaction chamber. 12. A reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer according to any one of the above. 20. The pair of separators are arranged at a position where the wafer substrate does not hang on a flow velocity boundary surface of the raw material gas spreading from the surfaces of the pair of separators with respect to the reaction chamber. 20. The reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer according to any one of claims 14 to 19. 21. A source gas for semiconductor wafer vapor phase growth according to claim 14, wherein said pair of separators are formed of a material capable of growing said source gas. Uniform transport reaction tube. 22. The uniform source gas reaction for vapor-phase growth of a semiconductor wafer according to claim 14, wherein the pair of separators are formed of the same material as the wafer substrate. tube. 23. The pair of separators according to claim 14, wherein the pair of separators is formed of a semiconductor material.
3. The reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer according to any one of 2. 24. The pair of separators are formed of silicon.
12. A reaction tube for uniformly transporting a source gas for vapor-phase growth of a semiconductor wafer according to any one of the above. 25. The reaction tube according to claim 14, wherein the pair of separators is formed of a gallium-arsenic compound.