JP2001053301A - Manufacture of optoelectric transducer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively prevent the generation of peeling among semiconductor layers and rear electrodes by previously removing the division scheduled regions of the rear electrodes corresponding to the peripheral sections of discrete optoelectric transducer after division, after the formation of the rear electrodes, sealing the rear electrode sides with a resin and conducting a division to discrete transducer. SOLUTION: Transparent electrodes 14, semiconductor layers 16 and rear electrodes 18 are formed successively on a large-sized transparent insulating substrate 12, and the division scheduled region 24 of the rear electrodes 18 is removed into prescribed width. The division predetermined region 24 of the rear electrodes 18 is positioned a division line A. A sealing resin film 22, composed of a thermoplastic resin or a thermosetting resin having superior sealing properties, is formed so as to cover integrated thin-film solar cells 20 on the transparent insulating substrate 12. Accordingly, the removed section of the rear electrodes 18 are buried by the sealing resin film 22. A solar cell module in which the thin-film solar cells are modularized is divided along the division predetermined line A, and a plurality of the solar cell modules 10, 30 having a fixed shape are obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a photoelectric conversion device, and more particularly to a method for manufacturing a solar cell module.

[0002]

2. Description of the Related Art In an amorphous solar cell using an amorphous semiconductor layer as a photoelectric conversion layer, a transparent electrode layer, an amorphous semiconductor layer, and a back electrode layer are sequentially laminated on a glass substrate. A plurality of solar cells are formed by scribing for each film formation, and these solar cells are integrated to form a solar cell module.

The back electrode is generally made of a metal thin film, and is easily corroded by moisture or the like. Therefore, the back electrode of the solar cell module is sealed with resin. As a material of the sealing resin, generally, an ethylene-vinyl acetate copolymer (EVA) having excellent sealing properties for moisture and the like is used.

[0004] When solar cell modules having such a structure are desired to have various shapes, usually, after forming each film on a single large substrate as described above, the solar cell module is divided into a plurality of desired shapes. Then, each of the divided modules was sealed with a resin.

[0005]

However, in such conventional methods for manufacturing solar cell modules of various shapes,
When dividing into individual modules, there is a problem that the back electrode is separated from the semiconductor layer in the vicinity of the cut surface, particularly since the adhesion between the semiconductor layer and the back electrode is poor.

When a solar cell module having various shapes, for example, a triangle, is desired, performing various treatments on a structure having such a special shape after division has many problems in terms of transportation and the like. .

[0007] The present invention has been made under such circumstances,
Provided is a method for manufacturing a photoelectric conversion device, which can divide a photoelectric conversion device formed over a large substrate into a plurality of individual devices without causing separation between a semiconductor layer and a back electrode. The purpose is to do.

Another object of the present invention is to divide a photoelectric conversion device formed on a large substrate into a plurality of individual devices.
It is an object of the present invention to provide a method of manufacturing a photoelectric conversion device that allows individual photoelectric conversion devices of various shapes to be easily divided without any trouble.

[0009]

Means for Solving the Problems The inventors of the present invention have made intensive studies to solve the above-mentioned problems, and as a result, after forming the back electrode, they correspond to the peripheral portions of the individual photoelectric conversion devices after division. The area to be divided of the back electrode is removed in advance, and separation into individual devices is performed after sealing the back electrode side with a resin, so that separation between the semiconductor layer and the back electrode is effectively prevented. It has been found that it can be prevented. The present invention is based on such findings.

That is, according to the present invention, a step of sequentially laminating a first electrode layer, a semiconductor layer, and a second electrode layer on a substrate is performed, and the second electrode layer is divided into a plurality of modules. Removing the predetermined region to a predetermined width, dividing the second electrode layer into a plurality of units for each module, and covering the whole of the plurality of divided second electrode layers with a sealing resin, Forming a plurality of photoelectric conversion device modules by cutting the structure covered with the sealing resin along a region where the second electrode layer is removed and which is to be divided into the plurality of modules; The present invention provides a method for manufacturing a photoelectric conversion device, comprising:

According to the method of manufacturing a photoelectric conversion device of the present invention having the above-described structure, the region to be divided of the second electrode layer is removed in advance, and the second electrode layer is divided into individual modules after sealing with resin. Is performed, the second electrode layer is not exposed in the divided cross section. Therefore, the division into a plurality of modules includes the substrate, the first electrode layer, the semiconductor layer, and the sealing resin layer. This is performed on the stacked body, and thus, at the time of division, peeling of the second electrode layer from the semiconductor layer in the peripheral portion of each module is effectively prevented.

In the method of manufacturing a photoelectric conversion device according to the present invention, not only the second electrode layer but also a region to be divided of the semiconductor layer may be removed in advance. In this case, division into a plurality of modules is performed on a laminate including the substrate, the first electrode layer, and the sealing resin layer.

Further, not only the second electrode layer and the semiconductor layer, but also a region to be divided of the first electrode layer may be removed in advance. In this case, division into a plurality of modules is performed on a laminate including a substrate and a sealing resin layer.

In the above-described method, the removal of the scheduled division region, which is performed in advance, can be performed by the following method.

(1) This is performed by laser scribe. As the laser, one that scribes a transparent conductive layer, a semiconductor layer, a metal layer, or the like of a thin-film solar cell is preferably used. For example, a fundamental wave or a second harmonic of a YAG laser may be used.

(2) Using a grindstone or sandpaper. The material and particle size of the abrasive used in these are not particularly limited as long as the purpose is achieved. Examples of the material include alumina, carborundum, glass beads, metal powder, and synthetic resin. As the diameter,
10 to 1000 μm is preferred. Regarding the grinding method, either a dry method or a wet method may be used.

(3) Sandblasting is performed. The material and particle size of the particles used are not particularly limited as long as the purpose is achieved.Examples of the material include alumina, carborundum, glass beads, metal powder, and synthetic resin. Is 10 to 1000 μm
Is preferred.

(4) Etching is performed using a predetermined mask. Etching can be performed by either wet etching or dry etching, but it is necessary to use an etchant suitable for the material to be removed.

The width of the second electrode layer and the like removed by the above method depends on the shape of the solar cell module required, but is generally preferably 2 to 20 mm.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a cross-sectional view for explaining a method for manufacturing a solar cell module according to one embodiment of the present invention.

The solar cell module according to the present embodiment comprises:
It is produced as follows. That is, as shown in FIG.
A thin-film solar cell 20 as a photoelectric conversion element is formed by sequentially forming a transparent electrode 14, a semiconductor layer 16, and a back electrode 18 in a predetermined pattern on the transparent insulating substrate 12 in a usual manner. You. And
By electrically connecting the patterned transparent electrode 14 and the back surface electrode 18, a plurality of thin-film solar cells 20 are connected and integrated in series or in parallel, and are configured to obtain predetermined output characteristics. A solar cell module is obtained.

In this case, a plurality of solar cell modules of various shapes are formed on the large transparent insulating substrate 12. In the figure, they are indicated by reference numerals 10 and 30. These solar cell modules 10 and 30 are divided by division lines A as described later.

As the transparent insulating substrate 12, a glass substrate is preferably used from the viewpoint of weather resistance and strength, and a transparent resin substrate made of a transparent acrylic resin or the like and having an insulating property is used. Further, the transparent insulating substrate 12 is not limited to a rigid one, and may be a flexible one, and is not particularly limited.

The transparent electrode 14 has conductivity and light transmission.
For example, ITO or SnO ₂ Or IT
O / SnO₂ Are used.

The semiconductor layer 16 for performing photoelectric conversion includes amorphous silicon, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, amorphous silicon nitride, etc., as well as silicon and carbon, germanium. The amorphous or microcrystal of an amorphous silicon-based semiconductor composed of an alloy with another element such as tin, tin, etc.
An amorphous semiconductor layer having an n-type, MIS type, heterojunction type, homojunction type, Schottky barrier type, or a combination thereof is used.

In addition, the semiconductor layer 16 is made of CdTe
A compound semiconductor layer of a system, CdS, GaAs, InP, or the like is used. According to the method of the present invention, after the transparent electrode 14, the semiconductor layer 16, and the back electrode 18 are sequentially formed on the large-sized transparent insulating substrate 12, the area to be divided 24 of the back electrode 18 is removed to a predetermined width. The planned division region 24 of the back electrode 18 is located along the division line A.

As described above, the removal of the region to be divided 24 of the back electrode 18 can be performed by laser scribing, a method using a grindstone or sandpaper, sandblasting, etching using a predetermined mask, or the like. . Note that chromium, nickel, aluminum, or the like is used for the back surface electrode 18.

Next, a sealing resin film 22 made of a thermoplastic resin or a thermosetting resin having excellent sealing properties is formed so as to cover the integrated thin film solar cells 20 on the transparent insulating substrate 12. . As a result, the removed portion of the back electrode 18 is filled with the sealing resin film 22. Usually, a back cover made of a resin film having excellent weather resistance is further coated on the sealing resin film 22.

The solar cell module in which the thin-film solar cells configured as described above are modularized is divided along the division line A, and as a result, a plurality of solar cell modules 10 and 30 having a predetermined shape are formed. can get.

The portion of the solar cell module along the division line A forms a peripheral portion of the divided solar cell module, and the end face thereof is removed in advance by a predetermined width, so that the back electrode 18 is not present. Instead, the semiconductor layer 16 is directly covered with the sealing resin film 22. Therefore, the back electrode 18 does not peel off from the semiconductor layer 16 during the division.

The division into a plurality of solar cell modules along the dividing line A can be usually performed by using one or more kinds of devices capable of cutting the glass substrate, the sealing resin film and the back cover. As a method of cutting the glass substrate, there is a method in which the surface of the glass is scratched with a diamond cutter or the like, and thereafter, a stress is applied to the glass substrate.

As a method of cutting the sealing resin film and the back cover, a method of making a cut with a cutter knife may be used. When these methods are performed separately, either one may be performed first.

Further, in order to adjust the appearance of the solar cell module after cutting, the cross section after cutting and the vicinity thereof can be cut using the above-mentioned tool or another tool.

The case where the portion of the back electrode 18 along the division line A is removed with a predetermined width in advance has been described. However, the present invention is not limited to this, and as shown in FIG.
Not only the back electrode 18 but also the back electrode 18 and the semiconductor layer 16
Are removed with a predetermined width in advance along the separation line A (indicated by reference numeral 26 in the figure), and as shown in FIG. 3, the back surface electrode 18, the semiconductor layer 16, and the transparent electrode The same can be applied to the case where 14 is removed with a predetermined width in advance along the separation line A (indicated by reference numeral 28 in the figure).

Although the photoelectric conversion device according to the present invention has been described using an amorphous solar cell module as an example, the present invention is not limited to this, and crystalline and compound solar cells which have been widely used until now. The same applies to modules.

The connection method for integrating solar cells such as thin-film solar cells formed on a transparent insulating substrate is not particularly limited, and any connection method may be used. good.

As described above, the present invention can be embodied in various modified, modified, and modified forms based on the knowledge of those skilled in the art without departing from the spirit of the present invention.

Next, the manufacturing method and structure of the amorphous solar cell module to which the present invention is applied will be specifically described below with reference to the drawings.

[0039]

EXAMPLE 1 As shown in FIG. 2, a transparent conductive film layer 14 was formed on a glass substrate 12 by a thermal CVD method, and a YA having a wavelength of 1.06 μm was formed.
Using a fundamental wave of a G laser, a transparent conductive film layer 1 is formed in a strip shape.
4 was electrically separated to form a transparent electrode 14.

Next, after performing ultrasonic cleaning with pure water, the surface on which the transparent electrode 14 is formed is made of monosilane, methane and diborane at a substrate temperature of 200 ° C. and a reaction pressure of 0.5 to 1.0 Torr. By decomposing a mixed gas, a mixed gas composed of monosilane and hydrogen, a mixed gas composed of monosilane, hydrogen and phosphine in this order in a capacitively coupled glow discharge decomposition apparatus, P-type, I-type and N-type amorphous Quality semiconductor layers 16 were sequentially formed.

Next, at a position slightly deviated from the scribe line by the laser described above, the transparent electrode 14 is separated using a second harmonic of a YAG laser having a wavelength of 0.53 μm so as not to damage the transparent electrode 14. The semiconductor layer 16 was formed. Subsequently, aluminum was formed as the metal layer 18 on the semiconductor layer 16 to a thickness of 300 nm by a sputtering method.

Further, using the second harmonic of the YAG laser having a wavelength of 0.53 μm, the metal layer 18 is disposed at a position slightly shifted from the scribe line by the laser so as not to damage the transparent electrode 14. And the semiconductor layer 16 were separated to form the back electrode 18.

Thereafter, the back electrode 18 and the semiconductor layer 16
Is removed over a width of 10 mm along the module division line A using # 400 sandpaper, and the integrated amorphous silicon solar cell 10 divided for each module is removed.
Was prepared. In this case, a plurality of solar cell modules 10 and 30 to be divided later are formed on the glass substrate 12.

On the back electrode 18 side of the plurality of integrated amorphous silicon solar cell modules 10 and 30 manufactured as described above, a 600 μm thick EVA (copolymer of ethylene and vinyl acetate) film is sealed. The resin film 22 was covered over the whole surface, and was heated and fused by a vacuum laminating method, and a polyvinyl fluoride resin (trade name: Dedler) (not shown) having a thickness of 38 μm was covered.

Then, a cut line is made from the glass substrate side of the separation line A with a diamond cutter, and a cut is made from the back cover side of the separation line A with a cutter knife until the cutting edge reaches the glass substrate. The substrate was divided by applying stress to obtain a plurality of individual amorphous silicon solar cell modules 10 and 30.

At the time of this division, since the portion of the back electrode 18 along the separation line A has been removed in advance with a predetermined width, the back electrode 18 does not exist on the cut surface. The back electrode 18 was not peeled off from the semiconductor layer 16 at the end of.

The solar cell module 10 manufactured as described above was placed in a high-temperature, high-humidity test tank (85 ° C./90% R.C.).
H. ) Was left for 2,000 hours, but no decrease in electrical characteristics was observed.

Comparative Example A plurality of solar cell modules were formed on the same substrate in the same manner as in Example 1 except that the portions of the back electrode 18 and the semiconductor layer 16 along the separation line A were not removed in advance. It was fabricated and divided along a dividing line to obtain individual solar cell modules.

As a result, the back electrode 18 was exposed on the cut surface of the solar cell module, and peeling was observed between the back electrode 18 and the semiconductor layer 16.

When this solar cell module was left in a high-temperature and high-humidity test tank (85 ° C./90% RH) for 2000 hours, a decrease in electric characteristics was observed.

Embodiment 2 As shown in FIG. 3, not only the back electrode 18 and the semiconductor layer 16 but also the back electrode 18, the semiconductor layer 16 and the transparent electrode 14
A plurality of solar cell modules were fabricated on the same substrate in the same manner as in Example 1 except that the solar cell modules were removed along the separation line A in the same manner as in Example 1 (indicated by reference numeral 28 in the figure). Then, the solar cell module was divided along the division line A to obtain individual solar cell modules.

As a result, the same excellent results as in Example 1 were obtained.

[0053]

As described in detail above, according to the present invention, the area to be divided of the second electrode layer is removed in advance, and the module is divided into individual modules after sealing with resin. In the division, the second electrode layer is effectively prevented from peeling from the semiconductor layer in the peripheral portion of each module. As a result, a plurality of photoelectric conversion device modules having a desired shape can be obtained with high reliability.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a solar cell module according to one embodiment of the present invention.

FIG. 2 is a sectional view showing a solar cell module according to another embodiment of the present invention.

FIG. 3 is a sectional view showing a solar cell module according to still another embodiment of the present invention.

[Explanation of symbols]

 10, 30 ... solar cell module 12 ... transparent insulating substrate 14 ... transparent electrode 16 ... semiconductor layer 18 ... back surface electrode 20 ... thin film solar cell 22 ... sealing resin film 24, 26, 28 ... removal part

Claims (5)

[Claims] A step of sequentially laminating a first electrode layer, a semiconductor layer, and a second electrode layer on a substrate; and determining a predetermined area of the second electrode layer to be divided into a plurality of modules. Removing the second electrode layer into a plurality of sections for each module; covering the whole of the plurality of divided second electrode layers with a sealing resin; Forming a plurality of photoelectric conversion device modules by cutting the structure coated with the second electrode layer along an area to be divided into the plurality of modules, from which the second electrode layer has been removed. A method for manufacturing a photoelectric conversion device, comprising: 2. In the step of dividing the second electrode layer into a plurality of units for each module, not only the second electrode layer but also a region of the semiconductor layer which is to be divided into a plurality of modules has a predetermined width. 2. The method according to claim 1, wherein the second electrode layer and the semiconductor layer are divided into a plurality of units for each module. 3. 3. In the step of dividing the second electrode layer into a plurality of modules for each module, the second electrode layer will be divided into a plurality of modules of the semiconductor layer and the first electrode as well as the second electrode layer. The method according to claim 1, wherein the region is also removed to a predetermined width, and the second electrode layer, the semiconductor layer, and the first electrode are divided into a plurality of units for each module. . 4. A method of removing a predetermined width of an area to be divided into a plurality of modules, the method including a step of using a laser scribe, a method using a grindstone / sandpaper, a sandblasting process, and an etching using a predetermined mask. 4. The method according to claim 1, wherein the step is performed by one selected one.
The method for manufacturing a photoelectric conversion device according to any one of the above items. 5. The method according to claim 1, wherein said predetermined width is 2 to 20 mm.