JP2001044757A - Voltage controlled oscillator - Google Patents

Voltage controlled oscillator

Info

Publication number
JP2001044757A
JP2001044757A JP11212825A JP21282599A JP2001044757A JP 2001044757 A JP2001044757 A JP 2001044757A JP 11212825 A JP11212825 A JP 11212825A JP 21282599 A JP21282599 A JP 21282599A JP 2001044757 A JP2001044757 A JP 2001044757A
Authority
JP
Japan
Prior art keywords
thermistor
inductor
temperature
frequency
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11212825A
Other languages
Japanese (ja)
Inventor
Naoki Sekine
尚基 関根
Hideo Hashimoto
英雄 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Priority to JP11212825A priority Critical patent/JP2001044757A/en
Publication of JP2001044757A publication Critical patent/JP2001044757A/en
Pending legal-status Critical Current

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an oscillator of which the oscillation frequency to the temperature is stabilized by connecting a thermistor in parallel to an inductor, which widens the frequency variable width, to correct the temperature characteristic of the inductor. SOLUTION: This voltage controlled oscillator comprises an oscillation circuit which has a crystal resonator 1 as the L component and has a circuit side 2 as the capacitance component, and an inductor 4 which increases the frequency variation is connected to the crystal resonator 1 in the oscillation loop, and further, a varactor diode 3 is connected. A thermistor resistor network 6 is connected in parallel to the inductor 4. The thermistor resistor network 6 comprises a thermistor 7 and first and second resistors 8a and 8b, and the thermistor 7 is a negative characteristic thermistor of which the resistance value is reduced according as the temperature rises. The first resistor 8a is connected in parallel to the thermistor 7, and the second resistor 8b is connected in series to it. In this constitution, the temperature resistance characteristic is adjusted by the first and second resistors 8a and 8b to make the temperature characteristic of am equivalent series inductance flat.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、PLL(PHASE L0C
KED L00P)回路等に用いられる電圧制御発振器を産業上
の技術分野とし、特に水晶振動子を用いた電圧制御発振
器に関する。
[0001] The present invention relates to a PLL (PHASE L0C).
The present invention relates to a voltage controlled oscillator used for a KED L00P) circuit or the like as an industrial technical field, and particularly relates to a voltage controlled oscillator using a crystal oscillator.

【0002】[0002]

【従来の技術】(発明の背景)電圧制御発振器は、制御
電圧に応答して発振周波数が変化するものとして知られ
る。このようなものの一つに水晶振動子(水晶発振器)
を用いた電圧制御発振器がある。近年では、動的環境下
での電子機器の利用が多く、温度変化に対する安定な出
力が求められている。
2. Description of the Related Art A voltage controlled oscillator is known to change its oscillation frequency in response to a control voltage. One such device is a crystal oscillator (crystal oscillator).
There is a voltage-controlled oscillator using the same. In recent years, electronic devices are frequently used in a dynamic environment, and stable output with respect to a temperature change is required.

【0003】(従来技術の一例)第3図は従来例を説明
する電圧制御発振器の回路図である。電圧制御発振器
は、水晶振動子1をL成分とし回路側2を容量成分とし
たコルピッツ型の発振回路からなる。そして、発振ルー
プ中の水晶振動子1に電圧可変容量素子例えば可変容量
ダイオード3を接続してなる。なお、図中のR(1、
2、3)は抵抗、C(1、2)は発振用分割コンデン
サ、Trは発振用トランジスタ、Vccは電源、Voは出
力である。
FIG. 3 is a circuit diagram of a voltage controlled oscillator illustrating a conventional example. The voltage-controlled oscillator comprises a Colpitts-type oscillation circuit in which the crystal oscillator 1 is an L component and the circuit side 2 is a capacitance component. A voltage variable capacitance element, for example, a variable capacitance diode 3 is connected to the crystal unit 1 in the oscillation loop. Note that R (1,
2, 3) are resistors, C (1, 2) is an oscillation split capacitor, Tr is an oscillation transistor, Vcc is a power supply, and Vo is an output.

【0004】可変容量ダイオード3には、逆方向電圧
(アノードを一、カソードを十〉とした制御電圧Vcが
印加される。これにより、可変容量ダイオード3の端子
間の容量が変化して、水晶振動子1からみた回路側の全
体の直列等価容量(所謂負荷容量)も変化する。そし
て、この容量変化に追従して水晶振動子1のインダクタ
成分も共振するように変化し、結局発振周波数が制御さ
れる。
A control voltage Vc having a reverse voltage (one anode, one cathode) is applied to the variable capacitance diode 3. As a result, the capacitance between the terminals of the variable capacitance diode 3 changes, and The series equivalent capacitance (so-called load capacitance) of the entire circuit side as viewed from the vibrator 1 also changes, and the inductor component of the crystal oscillator 1 changes so as to resonate following this change in capacitance, and the oscillation frequency eventually increases. Controlled.

【0005】水晶振動子1は、第4図の周波数リアクタ
ンス特性に示したように、共振特性を有する(実線で示
す曲線イ)。すなわち、周波数の上昇に伴い、直列共振
点fr及び並列共振点faを有する。そして、両共振点
間がインダクタ成分となり、この周波数領域でのみ回路
側の容量と共振する。
The crystal resonator 1 has resonance characteristics as shown in the frequency reactance characteristics of FIG. 4 (curve A shown by a solid line). In other words, as the frequency increases, the resonance point has a series resonance point fr and a parallel resonance point fa. The inductor component is between the two resonance points, and resonates with the circuit-side capacitance only in this frequency region.

【0006】したがって、直列と並列共振点間の周波数
領域が広いほど、回路側の容量変化に追従してインダク
タ成分が変化するので、制御電圧Vcに応答して発振周
波数が変化する。このことから、周波数可変量を多くす
る場合には、水晶振動子1にインダクタ4を接続して直
列共振点frを低域側fr’に移行することが行われて
いる(前第4図の点線で示す曲線ロ)。この場合、通常
ではインダクタ4に抵抗5を並列に接続して等価直列イ
ンダクタを可変し、周波数可変幅を調整する。
Accordingly, as the frequency region between the series and parallel resonance points is wider, the inductor component changes following the change in capacitance on the circuit side, so that the oscillation frequency changes in response to the control voltage Vc. For this reason, when increasing the frequency variable amount, the inductor 4 is connected to the crystal unit 1 to shift the series resonance point fr to the lower frequency side fr '(see FIG. 4). Curve b shown by a dotted line). In this case, usually, the resistor 5 is connected in parallel to the inductor 4 to change the equivalent series inductor and adjust the frequency variable width.

【0007】[0007]

【発明が解決しようとする課題】(従来技術の問題点)
しかしながら、上記構成の電圧制御発振器では、周波数
可変量を多くするため、例えば巻線によるインダクタ4
を使用する。しかし、この種のインダクタは温度によっ
てインダクタンス値が変化する温度特性を持つ(第5
図)。このため、制御電圧Vcが一定でも、温度が異な
ると周波数変化量(△f/f)が異なり、発振周波数を
不安定にする問題があった。なお、fは発振周波数、△
fは発振周波数からの変化量である。
[Problems to be Solved by the Invention]
However, in the voltage-controlled oscillator having the above configuration, in order to increase the frequency variable amount, for example, the inductor
Use However, this kind of inductor has a temperature characteristic in which the inductance value changes with temperature (fifth characteristic).
Figure). For this reason, even if the control voltage Vc is constant, if the temperature is different, the amount of frequency change (Δf / f) is different, and there is a problem that the oscillation frequency is unstable. Here, f is the oscillation frequency, △
f is the amount of change from the oscillation frequency.

【0008】このことから、従来では、水晶振動子1の
温度特性を右上がりとして(第6図曲線イ)、インダク
タ4の温度特性によって温度上昇とともに低下する発振
周波数(同図曲線ロ)の変化を相殺していた。しかし、
このような手法では、個々のインダクタ4のそれぞれ異
なる温度特性を相殺するため、複数の温度特性を持った
水晶振動子1を揃える必要があり、生産性を低下させる
問題があった。
For this reason, conventionally, the temperature characteristic of the crystal unit 1 is increased to the right (FIG. 6, curve A), and the change in the oscillation frequency (curve B, FIG. 6) that decreases with the temperature increase due to the temperature characteristic of the inductor 4 Was offset. But,
In such a method, in order to cancel out the different temperature characteristics of the individual inductors 4, it is necessary to arrange the crystal units 1 having a plurality of temperature characteristics, and there is a problem that the productivity is reduced.

【0009】(発明の目的)本発明は、インダクタの温
度特性を補正して温度に対する発振周波数を安定にした
電圧制御発振器を提供することを目的とする。
(Object of the Invention) An object of the present invention is to provide a voltage controlled oscillator in which the temperature characteristic of an inductor is corrected and the oscillation frequency with respect to temperature is stabilized.

【0010】[0010]

【課題を解決するための手段】本発明は、周波数可変幅
を広げるインダクタにサーミスタを並列に接続したこと
を基本的な解決手段とする。
The basic solution of the present invention is to connect a thermistor in parallel to an inductor for increasing the frequency variable width.

【0011】[0011]

【作用】本発明では、インダクタにサーミスタを並列に
接続するので、並列回路の端子間のインダクタンス(等
価直列インダクタンス)が温度上昇とともに減少し、イ
ンダクタの温度特性を補正する。以下、本発明の一実施
例を説明する。
According to the present invention, since the thermistor is connected in parallel to the inductor, the inductance between the terminals of the parallel circuit (equivalent series inductance) decreases as the temperature rises, and the temperature characteristic of the inductor is corrected. Hereinafter, an embodiment of the present invention will be described.

【0012】第1図は本発明の一実施例を説明する電圧
制御発振器の回路図である。なお、前従来例図と同一部
分には同番号を付与してその説明は簡略又は省略する。
電圧制御発振器は、前述のように、水晶振動子1をL成
分として回路側2を容量成分としたコルピッツ型の発振
回路からなる。そして、発振ループ中の水晶振動子1に
周波数可変量を多くするインダクタ4を接続し、さらに
可変容量ダイオード3を接続してなる。
FIG. 1 is a circuit diagram of a voltage controlled oscillator illustrating an embodiment of the present invention. The same parts as those in the prior art are denoted by the same reference numerals, and description thereof will be simplified or omitted.
As described above, the voltage-controlled oscillator is a Colpitts-type oscillation circuit in which the crystal oscillator 1 is an L component and the circuit side 2 is a capacitance component. Then, an inductor 4 for increasing the frequency variable amount is connected to the crystal resonator 1 in the oscillation loop, and a variable capacitance diode 3 is further connected.

【0013】そして、この実施例では、インダクタ4に
サーミスタ抵抗網6を並列に接続してなる。サーミスタ
抵抗網6はサーミスタ7と第1及び第2抵抗8(ab)
からなる。サーミスタ7は温度上昇に対して抵抗値が減
少する(第2図)所謂負特性サーミスタからなる。第1
抵抗8aはサーミスタ7に並列に、第2抵抗8bは直列
に接続する。
In this embodiment, a thermistor resistor network 6 is connected to the inductor 4 in parallel. The thermistor resistor network 6 is composed of a thermistor 7 and first and second resistors 8 (ab).
Consists of The thermistor 7 is a so-called negative characteristic thermistor whose resistance value decreases with increasing temperature (FIG. 2). First
The resistor 8a is connected in parallel with the thermistor 7, and the second resistor 8b is connected in series.

【0014】このような構成のものでは、インダクタ4
とサーミスタ抵抗網6による並列回路の端子間の等価直
列インダクタンスLsは次式(1)となる。但し、Rp
はサーミスタ抵抗網の抵抗値、Lpはインダクタ4のイ
ンダクタンスである。 Ls=Lp・Rp /{Rp+(ωLp)}・・・(1)
In such a configuration, the inductor 4
And the equivalent series inductance Ls between the terminals of the parallel circuit by the thermistor resistor network 6 is given by the following equation (1). Where Rp
Is the resistance value of the thermistor resistor network, and Lp is the inductance of the inductor 4. Ls = Lp · Rp 2 / {Rp 2 + (ωLp) 2 } (1)

【0015】上式から明らかなとおり、温度上昇に伴
い、サーミスタ抵抗網6の抵抗値Rpが減少すると、等
価直列インダクタンスも小さくなる。したがって、サー
ミスタ抵抗網6の、第1及び第2抵抗8(ab)によっ
て温度抵抗特性を調整することにより、等価直列インダ
クタンスの温度特性を平坦にできる。なお、温度に対す
る等価直列インダクタンスは一定なので、サーミスタ及
び第1及び第2抵抗によって周波数可変幅は決定され
る。
As is apparent from the above equation, when the resistance value Rp of the thermistor resistor network 6 decreases with increasing temperature, the equivalent series inductance also decreases. Therefore, the temperature characteristics of the equivalent series inductance can be made flat by adjusting the temperature resistance characteristics of the thermistor resistance network 6 using the first and second resistors 8 (ab). Since the equivalent series inductance with respect to temperature is constant, the frequency variable width is determined by the thermistor and the first and second resistors.

【0016】このようなことから、本実施例では、等価
直列インダクタンスのLsにより、周波数可変幅を大き
くして、しかも温度特性を平坦とするので、温度変化に
拘らず、制御電圧Vcに対する周波数変化量を一定にし
て、発振周波数を安定にする。
From the above, in the present embodiment, the frequency variable width is increased by the equivalent series inductance Ls, and the temperature characteristic is flattened. Therefore, regardless of the temperature change, the frequency change with respect to the control voltage Vc is not affected. The amount is kept constant and the oscillation frequency is stabilized.

【0017】[0017]

【他の事項】なお、上記実施例では、サーミスタ抵抗網
6はサーミスタ7及び第1、第2抵抗8(ab)から形
成したが、サーミスタ7の特牲を選択することによって
第1及び第2抵抗8(ab)を省略できる。また、これ
とは逆に、サーミスタ抵抗網6にさらに図示しない抵抗
を並列あるいは直列に接続してもよく、任意に選択でき
る。そして、インダクタは巻線型としたが、チップイン
ダクタでも同様である。
In the above embodiment, the thermistor resistor network 6 is formed by the thermistor 7 and the first and second resistors 8 (ab). However, the first and second thermistors 7 are selected by selecting the characteristics of the thermistor 7. The resistor 8 (ab) can be omitted. Conversely, a resistor (not shown) may be further connected to the thermistor resistor network 6 in parallel or in series, and can be arbitrarily selected. Although the inductor is a wire wound type, the same applies to a chip inductor.

【0018】[0018]

【発明の効果】本発明は、周波数可変幅を広げるインダ
クタにサーミスタを並列に接続したので、インダクタの
温度特性を補正して温度に対する発振周波数を安定にし
た電圧制御発振器を提供できる。
According to the present invention, since the thermistor is connected in parallel to the inductor for increasing the frequency variable width, it is possible to provide a voltage controlled oscillator in which the temperature characteristic of the inductor is corrected and the oscillation frequency with respect to the temperature is stabilized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本実施例の一実施例を説明する電圧制御発振器
の回路図である。
FIG. 1 is a circuit diagram of a voltage-controlled oscillator illustrating one embodiment of the present embodiment.

【図2】本実施例の一実施例に適用するサーミスタの温
度抵抗特性図である。
FIG. 2 is a temperature resistance characteristic diagram of a thermistor applied to one embodiment of the present embodiment.

【図3】従来例を説明する電圧制御発振器の回路図であ
る。
FIG. 3 is a circuit diagram of a voltage controlled oscillator illustrating a conventional example.

【図4】従来例を説明する水晶振動子のリアクタンス特
性図である。
FIG. 4 is a diagram illustrating a reactance characteristic of a quartz oscillator for explaining a conventional example.

【図5】従来例を説明するインダクタの温度特性図であ
る。
FIG. 5 is a temperature characteristic diagram of an inductor for explaining a conventional example.

【図6】従来例を説明する周波数温度特性図である。FIG. 6 is a frequency temperature characteristic diagram illustrating a conventional example.

【符号の説明】[Explanation of symbols]

1 水晶振動子、2 発振回路側、3 可変容量ダイオ
ード、4 インダクタ、5、8 抵抗、6 サーミスタ
抵抗網、7 サーミスタ.
1 crystal oscillator, 2 oscillation circuit side, 3 variable capacitance diode, 4 inductor, 5 and 8 resistor, 6 thermistor resistor network, 7 thermistor.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5J079 AA04 BA02 BA17 CB02 DA22 FA13 FA14 FA21 FA24 FA26 GA02 KA08 5J081 AA01 BB10 CC17 DD03 DD26 EE02 EE04 EE05 EE18 FF21 FF23 GG01 KK02 KK09 KK14 KK22 LL01 MM01 MM04  ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】周波数可変幅を広げるインダクタを直列に
接続した水晶振動子に電圧可変容量素子を接続してなる
電圧制御発振器において、前記インダクタにサーミスタ
を並列に接続したことを特徴とする電圧制御発振器。
1. A voltage controlled oscillator comprising a voltage-variable capacitive element connected to a crystal unit in which an inductor for increasing a frequency variable width is connected in series, wherein a thermistor is connected in parallel to said inductor. Oscillator.
JP11212825A 1999-07-27 1999-07-27 Voltage controlled oscillator Pending JP2001044757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11212825A JP2001044757A (en) 1999-07-27 1999-07-27 Voltage controlled oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11212825A JP2001044757A (en) 1999-07-27 1999-07-27 Voltage controlled oscillator

Publications (1)

Publication Number Publication Date
JP2001044757A true JP2001044757A (en) 2001-02-16

Family

ID=16628993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11212825A Pending JP2001044757A (en) 1999-07-27 1999-07-27 Voltage controlled oscillator

Country Status (1)

Country Link
JP (1) JP2001044757A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032328A1 (en) * 2008-09-22 2010-03-25 パイオニア株式会社 Pll circuit and film thickness measuring instrument using the same
CN104579172A (en) * 2014-11-28 2015-04-29 上海华虹宏力半导体制造有限公司 Resistor circuit with temperature coefficient compensation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032328A1 (en) * 2008-09-22 2010-03-25 パイオニア株式会社 Pll circuit and film thickness measuring instrument using the same
JP4773581B2 (en) * 2008-09-22 2011-09-14 パイオニア株式会社 Film thickness measuring instrument using PLL circuit
US8432151B2 (en) 2008-09-22 2013-04-30 Pioneer Corporation Film-thickness measuring device using PLL circuit
CN104579172A (en) * 2014-11-28 2015-04-29 上海华虹宏力半导体制造有限公司 Resistor circuit with temperature coefficient compensation
CN104579172B (en) * 2014-11-28 2017-06-06 上海华虹宏力半导体制造有限公司 Resistance circuit with tc compensation

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