JP2001044115A - Device and method for manufacturing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device which can form a resist pattern with high accuracy, as compared with the conventional developing methods by reducing the dimension fluctuation of a resist by suppressing the occurrence of micro-bubbles by reducing the impact to a wafer, and then making the quantity of a developing solution per unit area of the wafer uniform. SOLUTION: A semiconductor manufacturing device is composed of a turntable 2, on which a semiconductor substrate 1 is placed and a plurality of discharge nozzles 4 which are provided above the turntable 2 and apply at least a resist developing solution 3 to the substrate 1 and forms a film of the developing solution on the substrate 1. The device is constituted, in such a way that the rotational direction 5 of the turntable 2 is made equal to the discharging direction 6 of the solution 3, and in addition, the intervals a1, a2, a3, etc., among the nozzles 4 are made different from each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for manufacturing a semiconductor, and more particularly to a method of forming a resist developer liquid film on a semiconductor substrate, which suppresses the generation of microbubbles and the formation of a substrate. The present invention relates to an apparatus and a method for manufacturing a semiconductor in which the amount of a developer per unit area is made uniform.

[0002]

2. Description of the Related Art An excimer lithography process using KrF light or ArF light as a light source is considered promising for manufacturing a device having a design dimension of 0.15 μm level, and research and development are proceeding. It is difficult to form a pattern finer than the exposure wavelength.
Establishing a process is extremely difficult. In particular,
In the development process, there are problems such as dimensional accuracy and development defects, and the effect on the yield is very large. Various development methods have been proposed so far, but the current resist has a very high hydrophobicity for improving resolution,
There is a risk of repelling when the developer is filled. Further, when the resist and the developing solution come into contact with each other, fine bubbles (microbubbles) are generated, and a difference in the developing solution concentration within the wafer surface causes problems such as dimensional variations of the resist. is there.

[0003]

SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned drawbacks of the prior art, and in particular, to reduce the impact on the wafer and suppress the generation of microbubbles as compared with the conventional developing method. A novel semiconductor manufacturing apparatus and a manufacturing method thereof, in which the amount of a developing solution per unit area of a wafer is made uniform, thereby eliminating dimensional variations of a resist and enabling formation of a highly accurate resist pattern. It is.

[0004]

SUMMARY OF THE INVENTION The present invention basically employs the following technical configuration to achieve the above object.

That is, a first aspect of the semiconductor manufacturing apparatus according to the present invention is a rotatable table on which a semiconductor substrate is mounted, and a rotatable table provided above the table, wherein at least a resist developing solution is applied to the semiconductor substrate. In a semiconductor manufacturing apparatus comprising a plurality of discharge nozzles to form a liquid film of the resist developing solution on the semiconductor substrate, the rotation direction of the table and the discharging direction of the resist developing solution are set to be the same direction. , Characterized in that the plurality of discharge nozzles are configured to have different intervals.
A second mode is characterized in that the interval between the plurality of discharge nozzles is large on the substrate central portion side and small on the substrate outer peripheral portion side, and the third mode is for mounting a semiconductor substrate. A semiconductor, comprising a rotatable table and a plurality of discharge nozzles provided above the table and applying at least a resist developing solution onto the semiconductor substrate, and forming a liquid film of the resist developing solution on the semiconductor substrate In the manufacturing apparatus, the direction of rotation of the table and the direction of discharge of the resist developer are set to be the same direction, and the flow rate of the developer at each of the plurality of discharge nozzles is reduced at the substrate central portion side, and In a fourth aspect, the flow rate of the developing solution of the discharge nozzle is constant, and the diameter of the plurality of discharge nozzles is set at the center of the substrate. In the fifth aspect, the diameter of the plurality of discharge nozzles is constant, and the flow rate of the developing solution of the discharge nozzle is In the sixth aspect, a rotatable table on which a semiconductor substrate is mounted and a rotatable table on which the semiconductor substrate is mounted are provided above the table. A plurality of discharge nozzles for applying at least a resist developing solution on the semiconductor substrate, a semiconductor manufacturing apparatus for forming a liquid film of the resist developing solution on the semiconductor substrate,
The direction of rotation of the table and the direction of discharge of the resist developer are the same, and the plurality of discharge nozzles are arranged at equal intervals, and at the start of discharge of the resist developer, from the substrate outer peripheral side. It is characterized in that discharge is performed with a time lag in order toward the center of the substrate.

According to another aspect of the present invention, there is provided a semiconductor manufacturing method comprising: a rotatable table on which a semiconductor substrate is placed; and a plurality of tables provided above the table, for applying at least a resist developing solution onto the semiconductor substrate. In the semiconductor manufacturing method of forming a liquid film of the resist developing solution on the semiconductor substrate, the rotation direction of the table and the discharging direction of the resist developing solution are made the same direction, By reducing the flow rate of the developing solution at the plurality of discharge nozzles at the central portion of the substrate and increasing the flow rate at the outer peripheral portion of the substrate, the application amount of the developing solution per unit area of the substrate at the time of liquid filling is uniform. It is characterized by having made it.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor manufacturing apparatus and a semiconductor manufacturing method according to the present invention are characterized in that, in a developing step, in order to reduce development defects, particularly microbubbles, the discharge port of a developing nozzle is set in the same direction as the wafer rotation direction. The impact on the developer on the wafer is reduced.

Further, as shown in FIG. 1, the distance between the discharge ports of the developer is changed, as shown in FIG. 2, the diameter of the discharge ports is changed, or as shown in FIG. By controlling the order in which the liquids are discharged, the amount of the developer applied per unit area within the wafer surface is made uniform, thereby improving the dimensional accuracy of the resist pattern.

Further, in addition to these, by adjusting the number of rotations of the wafer, the flow rate of the developing solution, the angle and height of the nozzle, it is possible to optimize the liquid filling condition.

According to this developing method, defects due to development can be reduced, and the yield can be improved.

[0011]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a semiconductor manufacturing apparatus according to an embodiment of the present invention;

FIG. 1 is a view showing a first embodiment of a semiconductor manufacturing apparatus according to the present invention. In these figures, a rotatable semiconductor substrate 1 is mounted. A table, and a plurality of discharge nozzles 4 provided above the table 2 for applying at least the resist developing solution 3 onto the semiconductor substrate 1; and forming a liquid film of the resist developing solution 3 on the semiconductor substrate 1. In the semiconductor manufacturing apparatus to be formed, the rotation direction 5 of the table 2 and the discharge direction 6 of the resist developer 3 are set to be the same direction, and the intervals a1, a2, a3,. A semiconductor manufacturing apparatus characterized in that the intervals a1, a2, a
3 indicate a semiconductor manufacturing apparatus characterized in that the interval a1 on the substrate center side 4B is large and the interval a3 on the substrate outer peripheral side 4A is small.

Therefore, a1> a2> a3.

Hereinafter, the first specific example will be described in more detail.

An antireflection film (trade name SWK) is formed on a Si substrate 1.
-EX1, manufactured by Tokyo Ohka Kogyo Co., Ltd.), and sequentially applied as a resist (trade name: TDUR-P009, manufactured by Tokyo Oka Kogyo),
Exposure was performed using a KrF excimer stepper. The developing was performed using the developing nozzle shown in FIG.
As the developing condition at this time, the rotational speed of the wafer was set to 300 rpm.
m, the flow rate of the developing solution is set to 0.8 liter / min, the height of the nozzle is set to 1.0 mm, and the angle formed by the nozzle with respect to the wafer surface is set to 0 degree. The discharge amount of the developer is a constant flow rate. By developing with this developing method, 0.22 μm
The dimensional accuracy of the m device was 12 nm, and the number of development defects was 3 pieces.

(Second Specific Example) FIG. 2 is a view showing a structure of a second specific example of the semiconductor manufacturing apparatus according to the present invention. A possible table, and a plurality of discharge nozzles 4 provided above the table 2 for applying at least the resist developing solution 3 on the semiconductor substrate 1. In the semiconductor manufacturing apparatus for forming a film, the rotation direction 5 of the table 2 and the discharge direction 6 of the resist developer 3 are made to be the same direction, the flow rate of the developer of the discharge nozzle is constant, and The diameter of the plurality of discharge nozzles is such that the diameter d1 of the nozzle at the center 4B of the substrate is small and the diameter d3 of the nozzle at the side 4A of the substrate is large.

Therefore, d1 <d2 <d3.

Hereinafter, the second example will be described in more detail.

An antireflection film (trade name SWK) is formed on the Si substrate 1.
-EX2, manufactured by Tokyo Ohka Kogyo Co., Ltd., resist (trade name: TDU)
R-PEX5, manufactured by Tokyo Ohka Kogyo Co., Ltd.)
Was exposed using an excimer stepper. The development conditions at this time were as follows: the number of rotations of the wafer was 1000 rpm, the flow rate of the developer was 1.2 liter / min, and the height of the nozzle was 1.5 m.
m, the angle formed by the nozzle with respect to the wafer surface is set to 5 degrees. The flow rate of the developer is a constant flow rate, and thus, the flow rate of the developer per unit area of the wafer can be made constant. By developing with this developing method, the dimensional accuracy of the 0.15 μm device was 8 nm, and the number of development defects was two.

The same effect can be obtained even if the diameters of the plurality of discharge nozzles are fixed and the flow rate of the developer is small at the central portion 4B of the substrate and large at the peripheral portion 4A of the substrate.

As described above, in the second embodiment, a rotatable table on which a semiconductor substrate is mounted, and a plurality of discharge nozzles provided above the table and adapted to apply at least a resist developing solution onto the semiconductor substrate In a semiconductor manufacturing apparatus for forming a liquid film of the resist developing solution on the semiconductor substrate, while the rotation direction of the table and the discharge direction of the resist developing solution are the same direction,
The flow rate of the developing solution at each of the plurality of discharge nozzles is small at a central portion of the substrate and large at a peripheral portion of the substrate.

(Third Specific Example) FIG. 3 is a view showing the structure of a third specific example of the semiconductor manufacturing apparatus according to the present invention. The third specific example will be described below in more detail. .

An antireflection film (trade name: DUV4) on a Si substrate
2, Brewer Science Co., Ltd.) and a resist (trade name: UV6, Shiley Far East Co., Ltd.) were sequentially applied, and exposed using a KrF excimer stepper. The development conditions at this time were as follows: the number of rotations of the wafer was 1500 rpm, and the flow rate of the developer was 1.5 liter / mi.
n, the height of the nozzle is set to 2.5 mm, and the angle formed by the nozzle with respect to the wafer surface is set to 15 degrees. The discharge of the developer is
4-1, 4-2, 4-3,..., 4-
The nozzles are configured to discharge the developer in the order of No. 15. Therefore, the time at which the discharge is started is delayed as approaching the substrate center side 4B. By developing with this developing method, the dimensional accuracy of the 0.15 μm device is 8
nm and two development defects.

As described above, in the third specific example, a rotatable table on which the semiconductor substrate 1 is mounted, and at least a resist developer 3 provided above the table 2 are applied onto the semiconductor substrate 1. In a semiconductor manufacturing apparatus comprising a plurality of discharge nozzles 4 and forming a liquid film of the resist developing solution 3 on the semiconductor substrate 1, the table 2
And the discharge direction 6 of the resist developing solution 3 is set to the same direction, and the plurality of discharge nozzles 4-1 to 4-1.
4-15 are arranged at equal intervals, and when the discharge of the resist developing solution 3 is started, the resist developer 3 is sequentially discharged from the nozzle 4-1 on the substrate outer peripheral side 4A to the substrate central part 4B sequentially with a time lag. It is characterized by the following.

[0025]

As described above, the semiconductor manufacturing apparatus and the manufacturing method according to the present invention are configured as described above, so that the impact on the wafer is reduced and the generation of microbubbles is suppressed as compared with the conventional developing method. I was able to do it.

Further, since the amount of the developing solution per unit area of the wafer becomes uniform, the dimensional accuracy of the resist pattern can be improved.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a first specific example of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a diagram showing a configuration of a second specific example of the present invention.

FIG. 3 is a diagram showing a configuration of a third specific example of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer 2 Rotary table 3 Developing solution 4 Nozzle 5 Wafer rotating direction 6 Developing solution discharging direction a1 to a3 Nozzle spacing d1 to d3 Nozzle diameter 4-1 First developing solution discharging nozzle 4-15 Last developing Nozzle for discharging liquid 4A Substrate outer peripheral side 4B Substrate central part side

Claims (7)

[Claims] 1. A rotatable table on which a semiconductor substrate is mounted, and a plurality of discharge nozzles provided above the table and adapted to apply at least a resist developing solution onto the semiconductor substrate. In the semiconductor manufacturing apparatus for forming a liquid film of the resist developing solution, the rotation direction of the table and the discharging direction of the resist developing solution are set to be the same direction, and an interval between the plurality of discharge nozzles is different. A semiconductor manufacturing apparatus characterized by the above-mentioned. 2. The semiconductor manufacturing apparatus according to claim 1, wherein an interval between the plurality of discharge nozzles is large at a central portion of the substrate and small at a peripheral portion of the substrate. 3. A rotatable table on which a semiconductor substrate is mounted, and a plurality of discharge nozzles provided above the table and adapted to apply at least a resist developer onto the semiconductor substrate. In a semiconductor manufacturing apparatus for forming a liquid film of the resist developing solution, the rotation direction of the table and the discharging direction of the resist developing solution are set to be the same direction, and the flow rate of the developing solution at each of the plurality of discharge nozzles. Is reduced on the substrate center side and increased on the substrate outer peripheral side. 4. The method according to claim 1, wherein the flow rate of the developing solution of the discharge nozzle is constant, and the diameters of the plurality of discharge nozzles are small on the central part of the substrate and large on the peripheral part of the substrate. 4. The semiconductor manufacturing apparatus according to 3. 5. The method according to claim 1, wherein the diameters of the plurality of discharge nozzles are constant, and the flow rate of the developing solution of the discharge nozzles is small at a central portion of the substrate and large at a peripheral portion of the substrate. Item 4. An apparatus for manufacturing a semiconductor according to Item 3. 6. A rotatable table on which a semiconductor substrate is mounted, and a plurality of discharge nozzles provided above the table and adapted to apply at least a resist developing solution onto the semiconductor substrate. In a semiconductor manufacturing apparatus for forming a liquid film of the resist developing solution, the rotation direction of the table and the discharging direction of the resist developing solution are made the same direction, and the plurality of discharge nozzles are arranged at equal intervals, and Wherein the resist developing solution is discharged from the substrate outer peripheral side toward the substrate central part with a time lag in order at the start of discharge of the resist developing solution. 7. A rotatable table on which a semiconductor substrate is mounted, and a plurality of discharge nozzles provided above the table and for applying at least a resist developing solution onto the semiconductor substrate. In the method of manufacturing a semiconductor for forming a liquid film of the resist developing solution, the rotating direction of the table and the discharging direction of the resist developing solution are set to the same direction, and the flow rate of the developing solution at the plurality of discharge nozzles is reduced. A method of manufacturing the semiconductor, wherein the amount of the developing solution applied per unit area of the substrate at the time of liquid filling is made uniform by decreasing the size at the center portion of the substrate and increasing the size at the peripheral portion of the substrate.