JP2001042359A - Liquid crystal display panel and its production - Google Patents

Liquid crystal display panel and its production

Info

Publication number
JP2001042359A
JP2001042359A JP21872199A JP21872199A JP2001042359A JP 2001042359 A JP2001042359 A JP 2001042359A JP 21872199 A JP21872199 A JP 21872199A JP 21872199 A JP21872199 A JP 21872199A JP 2001042359 A JP2001042359 A JP 2001042359A
Authority
JP
Japan
Prior art keywords
wiring electrode
pixel
liquid crystal
insulating layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21872199A
Other languages
Japanese (ja)
Other versions
JP3209730B2 (en
Inventor
Hirobumi Wakemoto
博文 分元
Keisuke Tsuda
圭介 津田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21872199A priority Critical patent/JP3209730B2/en
Publication of JP2001042359A publication Critical patent/JP2001042359A/en
Application granted granted Critical
Publication of JP3209730B2 publication Critical patent/JP3209730B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent production of black spots even when defects are present in an insulating layer by forming electrodes in such a manner that only a part of at least one of the electrodes such as a pixel line electrode directly touches a liquid crystal composition or touches through only an alignment layer. SOLUTION: Only a part of at least one electrode of pixel line electrode 14, signal line electrode 12 and common line electrode 13 is directly in contact with a liquid crystal composition or through only an alignment layer. Then an insulating layer 17 is formed on the upper part of a thin film transistor(TFT) 15. The insulating layer 17 formed on the signal line electrode 12 and pixel line electrode 14 also has a sole to suppress changes in the TFT characteristics. By forming the insulating layer 17 on the upper part of the thin film transistor 15, changes in the TFT characteristics can be suppressed. Particle removal of the insulating layer 17 can be easily performed by a photolithographic method or the like. Thereby, even when defects are present in the insulating layer 17, irregular black spots are hardly produced and a panel with high display quality can be easily obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示パネル及
びその製造方法、特に基板面にほぼ平行な電界を加える
ことによって液晶を駆動するIPS方式の液晶表示パネ
ル及びその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display panel and a method for manufacturing the same, and more particularly, to an IPS type liquid crystal display panel for driving liquid crystal by applying a substantially parallel electric field to a substrate surface and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、薄膜トランジスタ(TFT)を用
いたアクティブマトリクス型液晶ディスプレイは、カム
コーダ用のディスプレイやノートパソコン用のディスプ
レイなど種々の分野へ利用されており、大きな市場を形
成してきている。とくに、最近、パソコンやワークステ
ーション用のモニターとしての応用展開が期待されてお
り、対角13〜14インチ以上の画面サイズの要求が高
まっている。TFT液晶ディスプレイの表示モードとし
ては、現状では捻れネマチック(TN)モードが主流と
なっているが、大画面表示用途には、特開平6−160
878号公報等に記載されている、基板面にほぼ平行な
電界を印加し、基板面に平行に液晶分子を動かすインプ
レーンスイッチング(IPS)モードが、その非常に広
い視野角特性により、期待を集めている。
2. Description of the Related Art In recent years, active matrix type liquid crystal displays using thin film transistors (TFTs) have been used in various fields such as displays for camcorders and displays for notebook computers, and have formed a large market. In particular, recently, application development as a monitor for a personal computer or a workstation is expected, and a demand for a screen size of 13 to 14 inches or more on a diagonal is increasing. At present, the twisted nematic (TN) mode is mainly used as the display mode of the TFT liquid crystal display.
The in-plane switching (IPS) mode described in US Pat. No. 878 or the like, which applies an electric field substantially parallel to the substrate surface and moves liquid crystal molecules parallel to the substrate surface, is expected to have an extremely wide viewing angle characteristic. I am collecting.

【0003】しかしながら、このIPSモードのTFT
液晶ディスプレイを連続して使用していると、黒い点状
に見える表示むらが発生する場合がある。この黒点状の
むらは、表示品位を低下させるために非常に問題であ
る。この黒点状の表示むらの対策、解決方法について
は、特開平10−206857号公報に言及されてい
る。それによれば、黒点状のむらは画素配線電極、信号
配線電極の保護膜のクラック部分で電気化学反が起こ
り、イオン性物質が生成することによって液晶層の電圧
保持率が低下して発生するとしている。そして、保護膜
の厚みを電極厚みに比べて厚くする、または有機高分子
の保護膜を形成することで、黒点むらを解消できるとし
ている。
However, this IPS mode TFT
When the liquid crystal display is used continuously, display irregularities appearing as black dots may occur. This black spot-like unevenness is very problematic because it degrades the display quality. The countermeasure and the solution for the black dot display unevenness are described in JP-A-10-206857. According to the report, black spot-like unevenness occurs at a crack portion of a protective film of a pixel wiring electrode and a signal wiring electrode, and the voltage holding ratio of a liquid crystal layer is reduced due to generation of an ionic substance. . By making the thickness of the protective film larger than the thickness of the electrode, or by forming a protective film of an organic polymer, it is possible to eliminate black spot unevenness.

【0004】[0004]

【発明が解決しようとする課題】しかし、黒点むらの発
生原因に関して検討した結果、黒点むらはピンホール等
により走査配線電極が誘電体保護膜(絶縁層)を介さず
に、直接液晶に接した場合にのみ発生することが見出さ
れた。一方、信号配線電極や画素配線電極、共通配線電
極上の誘電体保護膜にピンホール等の欠陥が存在し、液
晶が直接これらの電極に接した場合でも黒点むらは発生
しない。したがって、黒点むらを防ぐためには、走査配
線上の保護膜をピンホールフリーの完全な膜にすれば良
いことは明らかであるが、大面積の液晶ディスプレイに
おいて、ピンホールフリーを実現することは困難であ
る。また、走査配線電極と信号配線電極の交差部分等
で、異物等に起因するショートが発生した場合のレーザ
ー欠陥レスキューによっても走査配線電極上の絶縁層欠
損部は発生する場合があり、この場合への対処も必要と
なる。
However, as a result of examining the cause of black spot unevenness, the black spot unevenness caused the scanning wiring electrode to come into direct contact with the liquid crystal without a dielectric protective film (insulating layer) due to pinholes or the like. It was found to occur only on occasion. On the other hand, defects such as pinholes are present in the dielectric protection film on the signal wiring electrode, the pixel wiring electrode, and the common wiring electrode, and black spots do not occur even when the liquid crystal directly contacts these electrodes. Therefore, in order to prevent black spot unevenness, it is clear that the protective film on the scanning wiring should be a complete pinhole-free film, but it is difficult to realize pinhole-free in a large-area liquid crystal display. It is. In addition, the defect of the insulating layer on the scanning wiring electrode may also occur due to laser defect rescue when a short circuit caused by a foreign substance or the like occurs at the intersection of the scanning wiring electrode and the signal wiring electrode. It is also necessary to take measures.

【0005】本発明は、走査配線上の絶縁層にピンホー
ル等の欠損が存在する場合でも黒点むらが発生しない液
晶表示装置を提供することを目的とする。
It is an object of the present invention to provide a liquid crystal display device in which black spots do not occur even when a defect such as a pinhole is present in an insulating layer on a scanning wiring.

【0006】[0006]

【課題を解決するための手段】本発明においては、走査
配線電極上の絶縁層欠陥部の近傍に、走査配線電極以外
の電極、即ち画素配線電極、信号配線電極、共通配線電
極の少なくとも一部が配向膜のみを介して、または直接
に液晶組成物と接している部分を設けることで、黒点む
らの発生が抑制される。この理由は以下のように考えら
れる。
According to the present invention, at least a part of an electrode other than the scanning wiring electrode, that is, a pixel wiring electrode, a signal wiring electrode, and a common wiring electrode is provided near an insulating layer defective portion on the scanning wiring electrode. By providing a portion in contact with the liquid crystal composition via only the alignment film or directly, the occurrence of black spot unevenness is suppressed. The reason is considered as follows.

【0007】すなわち、黒点むらの発生原因は、ほとん
どの期間は負電位となっている走査配線電極の絶縁層欠
損部から液晶層へ電子注入が起こり、イオン(アニオ
ン)が生成することであると考えられる。走査配線電極
に対して正の電位となっている他の電極が誘電体絶縁層
で覆われている場合には、生成したイオンは中和される
ことがないため欠陥部近傍の液晶中のイオン濃度が高く
なり、電圧保持率が低下して黒く見える。これを模式的
に表したのが図7(a)である。
That is, the cause of black spot unevenness is that electrons are injected into the liquid crystal layer from the insulating layer defect portion of the scanning wiring electrode, which is at a negative potential for most of the period, and ions (anions) are generated. Conceivable. When the other electrode having a positive potential with respect to the scanning wiring electrode is covered with the dielectric insulating layer, the generated ions are not neutralized, so the ions in the liquid crystal near the defective portion are not neutralized. The density increases, the voltage holding ratio decreases, and the image looks black. This is schematically shown in FIG. 7 (a).

【0008】しかし、他の電極が露出している場合に
は、露出部分で再び電子を電極に与えることができるた
め、絶縁層欠陥部近傍のイオン濃度はあまり増大せず、
電圧保持率の低下が小さいため、黒点むらの発生を抑制
できるのである。これを模式的に表したのが図7(b)
である。
However, when the other electrode is exposed, electrons can be supplied to the electrode again at the exposed portion, so that the ion concentration near the insulating layer defect does not increase so much.
Since the decrease in the voltage holding ratio is small, the occurrence of black spot unevenness can be suppressed. This is schematically shown in FIG.
It is.

【0009】したがって、黒点むら課題を解決するため
には、負極性の走査配線電極の絶縁層欠損部近傍に、正
極性となる別の電極の露出部分を形成すればよい。その
ために、本発明では具体的に以下の手段を用いる。
Therefore, in order to solve the black spot unevenness problem, an exposed portion of another positive electrode may be formed in the vicinity of the insulating layer defect portion of the negative scanning wiring electrode. For this purpose, the present invention specifically uses the following means.

【0010】以下に述べる本発明の液晶表示パネル及び
その製造方法は、少なくとも一方が透明な一対の基板
と、該基板間に挟持され配向した誘電率異方性と屈折率
異方性とを有する液晶組成物層と、偏光手段と、基板上
にマトリクス状に配置された複数の画素と、画素配線電
極と、信号配線電極と、走査配線電極と、画素ごとに設
けられ画素配線電極、信号配線電極及び走査配線電極に
接続された薄膜トランジスタ素子と、共通配線電極と、
画素の光透過率または反射率を変化させる信号波形電圧
を印加する手段を備え、信号波形電圧による電界が、画
素配線電極と共通配線電極との間に基板面に略平行に印
加されるように構成された液晶表示パネルを前提とす
る。
A liquid crystal display panel and a method of manufacturing the same according to the present invention described below have at least one pair of transparent substrates and a dielectric anisotropy and a refractive index anisotropy sandwiched and aligned between the substrates. A liquid crystal composition layer, a polarizing means, a plurality of pixels arranged in a matrix on a substrate, a pixel wiring electrode, a signal wiring electrode, a scanning wiring electrode, a pixel wiring electrode provided for each pixel, and a signal wiring. A thin film transistor element connected to the electrode and the scanning wiring electrode, a common wiring electrode,
Means for applying a signal waveform voltage for changing the light transmittance or reflectance of the pixel, so that an electric field due to the signal waveform voltage is applied between the pixel wiring electrode and the common wiring electrode substantially in parallel to the substrate surface. It is assumed that the liquid crystal display panel is configured.

【0011】そして、第1の本発明にかかる液晶表示パ
ネルは、画素配線電極、信号配線電極及び共通配線電極
のうちの少なくともいずれかの電極の少なくとも一部
が、配向膜のみを介して、または直接に液晶組成物と接
していることを特徴とする。画素配線電極、信号配線電
極、共通配線電極の少なくともいずれかの電極の一部を
露出させて、配向膜のみを介してか、または直接に液晶
組成物と接するようにした構成は、信号配線電極や画素
配線電極上に絶縁層を形成しないか、絶縁層を形成した
後、部分的に絶縁層を除去することによって形成可能で
ある。
In the liquid crystal display panel according to the first aspect of the present invention, at least a part of at least one of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode is provided only through the alignment film or It is characterized by being in direct contact with a liquid crystal composition. The pixel wiring electrode, the signal wiring electrode, and a configuration in which at least a part of the electrode of the common wiring electrode is exposed to be in contact with the liquid crystal composition only through the alignment film or directly to the signal wiring electrode Alternatively, it can be formed by not forming an insulating layer on the pixel wiring electrode or by forming the insulating layer and then removing the insulating layer partially.

【0012】第2の本発明にかかる液晶表示パネルは、
画素配線電極、信号配線電極及び共通配線電極のうちの
少なくともいずれかの電極の少なくとも一部が、配向膜
のみを介して、または直接に液晶組成物と接しており、
かつ薄膜トランジスタ部分の上部には絶縁層が存在する
ことを特徴とする。信号配線電極や画素配線電極上に形
成する絶縁層は、TFT特性の変化を抑える役目も持っ
ており、薄膜トランジスタ部分の上部には絶縁層を形成
することにより、TFT特性の変化を抑制することがで
きる。絶縁層の部分除去はフォトリソグラフ法等により
容易に行うことができる。
A liquid crystal display panel according to a second aspect of the present invention comprises:
At least a part of at least one of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode is in contact with the liquid crystal composition directly or only via the alignment film,
In addition, an insulating layer exists above the thin film transistor portion. The insulating layer formed on the signal wiring electrode and the pixel wiring electrode also has a role of suppressing a change in the TFT characteristics. By forming an insulating layer on the thin film transistor portion, the change in the TFT characteristics can be suppressed. it can. Partial removal of the insulating layer can be easily performed by a photolithographic method or the like.

【0013】第3の本発明にかかる液晶表示パネルは、
走査配線電極上に存在する絶縁層欠落部分の近傍に、画
素配線電極、信号配線電極及び共通配線電極のうちの少
なくともいずれかの電極が配向膜のみを介して、または
直接に液晶組成物と接している部分を設けたことを特徴
とする。
A liquid crystal display panel according to a third aspect of the present invention comprises:
At least one of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode is in contact with the liquid crystal composition only through the alignment film or directly in the vicinity of the insulating layer missing portion existing on the scanning wiring electrode. The present invention is characterized in that a portion having

【0014】走査配線電極上の絶縁層欠陥部近傍の画素
配線電極、信号配線電極、共通配線電極の内の少なくと
もいずれかの電極に配向膜のみを介して、または直接に
液晶組成物と接している部分を選択的に設けることは、
電極を露出させたい所定の位置にレーザービームを照射
すること等により可能である。
At least one of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode in the vicinity of the insulating layer defect on the scanning wiring electrode is in contact with the liquid crystal composition directly via the alignment film or directly. Is to selectively provide
This can be achieved by irradiating a predetermined position where the electrode is to be exposed with a laser beam.

【0015】そこで、第4の本発明にかかる液晶表示パ
ネルの製造方法は、走査配線電極上に絶縁層欠落部分が
存在する場合、該絶縁層欠落部分の近傍における、画素
配線電極、信号配線電極及び共通配線電極のうちの少な
くともいずれかの電極に、当該電極が配向膜のみを介し
て、または直接に液晶組成物と接する部分を、レーザー
ビームを照射することにより形成することを特徴とす
る。
Therefore, in a fourth method of manufacturing a liquid crystal display panel according to the present invention, when an insulating layer missing portion exists on a scanning wiring electrode, a pixel wiring electrode and a signal wiring electrode are provided in the vicinity of the insulating layer missing portion. In addition, at least one of the common wiring electrodes is formed by irradiating a laser beam at a portion where the electrode is in direct contact with the liquid crystal composition via only the alignment film or directly.

【0016】[0016]

【発明の実施の形態】(実施の形態1)2画面の対角1
5.2インチ、アスペクト比16:9、解像度が縦76
8X横1364RGBのIPSモードTFT液晶パネル
を以下のようにして作製した。このパネルの画素部のア
レイ形状の平面模式図を図1に、断面模式図を図2に示
す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) A diagonal 1 of two screens
5.2 inches, aspect ratio 16: 9, resolution 76 vertical
An IPS mode TFT liquid crystal panel of 8X horizontal 1364 RGB was manufactured as follows. FIG. 1 is a schematic plan view of an array shape of a pixel portion of this panel, and FIG. 2 is a schematic cross-sectional view thereof.

【0017】図1、図2において、11は走査配線電
極、13は共通配線電極であり、図2に示すように基板
1上に形成されている。走査配線電極11、共通配線電
極13は、アルミニウムを主成分とする金属膜を製膜
し、フォトリソグラフ法で同一平面状にパターン形成し
て作成した。走査配線電極として使用する材料は配線抵
抗の低い金属が望ましいが、とくにアルミニウム系金属
に限定するものではなく、また、単層膜でも多層膜であ
ってもよい。次に、前記走査配線電極11及び共通配線
電極13を構成するアルミニウム膜の陽極酸化層19a
を形成した後、更に、窒化珪素(SiNx)層19bを
形成し、絶縁層19とした。
1 and 2, reference numeral 11 denotes a scanning wiring electrode, and 13 denotes a common wiring electrode, which is formed on the substrate 1 as shown in FIG. The scanning wiring electrode 11 and the common wiring electrode 13 were formed by forming a metal film containing aluminum as a main component and forming a pattern on the same plane by photolithography. The material used for the scanning wiring electrode is preferably a metal having a low wiring resistance, but is not particularly limited to an aluminum-based metal, and may be a single-layer film or a multilayer film. Next, an anodic oxide layer 19a of an aluminum film constituting the scanning wiring electrode 11 and the common wiring electrode 13
After that, a silicon nitride (SiNx) layer 19b was further formed to form an insulating layer 19.

【0018】次に、半導体層10としてアモルファスシ
リコンを堆積した後、走査配線電極11上の陽極酸化層
19aと窒化珪素層19bの一部を取り除いた。さらに
スパッタリング法によりアルミニウム/チタン(Al/
Ti)の2層を堆積させて薄膜トランジスタ(TFT)
15、信号配線電極12、画素配線電極14をフォトリ
ソグラフ法でパターン形成した。これにより、画素配線
電極14と走査配線電極11の間で蓄積容量16が形成
された。
Next, after depositing amorphous silicon as the semiconductor layer 10, a part of the anodic oxide layer 19a and the silicon nitride layer 19b on the scanning wiring electrode 11 was removed. Further, aluminum / titanium (Al /
Thin film transistor (TFT) by depositing two layers of Ti)
The pattern 15, the signal wiring electrode 12, and the pixel wiring electrode 14 were formed by photolithography. As a result, a storage capacitor 16 was formed between the pixel wiring electrode 14 and the scanning wiring electrode 11.

【0019】このアレイ基板とカラーフィルタ基板をギ
ャップ3.5μm間隔で貼り合わせ、液晶を真空注入し
てIPSパネルを形成した。注入した液晶は、p型成分
としてシアノ置換フェニルシクロヘキサンを主成分とす
るp型のネマチック液晶である。液晶は電界無印加時に
は上下基板間で捻れを持たずに配向しており、そのダイ
レクター方向は、走査配線電極11と80度の角度を成
している。偏光板は基板の上下に互いの偏光軸を直交さ
せ、かつ一方の偏光軸を液晶のダイレクター方向と一致
させて貼り付けた。
The array substrate and the color filter substrate were bonded at a gap of 3.5 μm, and liquid crystal was injected under vacuum to form an IPS panel. The injected liquid crystal is a p-type nematic liquid crystal mainly containing cyano-substituted phenylcyclohexane as a p-type component. The liquid crystal is aligned without twist between the upper and lower substrates when no electric field is applied, and its director direction forms an angle of 80 degrees with the scanning wiring electrode 11. The polarizing plate was attached on the upper and lower sides of the substrate so that the respective polarizing axes were orthogonal to each other, and one of the polarizing axes was aligned with the director direction of the liquid crystal.

【0020】走査配線電極11上の絶縁層19の欠損部
分をモデル的に作り込むために、走査配線電極11の一
部分にレーザービームを照射し、走査配線部の絶縁層1
9の一部を除去した。
In order to model a defective portion of the insulating layer 19 on the scanning wiring electrode 11, a part of the scanning wiring electrode 11 is irradiated with a laser beam and the insulating layer 1 of the scanning wiring portion is formed.
Part of 9 was removed.

【0021】このパネルに駆動回路を接続し、60℃の
雰囲気温度中で500時間まで連続駆動させたが、走査
配線電極11上の絶縁層19の欠損部分から黒点むらの
発生は認められなかった。
A driving circuit was connected to this panel, and the panel was continuously driven at an ambient temperature of 60 ° C. for up to 500 hours, but no black spot unevenness was observed from a defective portion of the insulating layer 19 on the scanning wiring electrode 11. .

【0022】本実施の形態では画素配線電極14および
信号配線電極12上に絶縁層が存在せず、電極が露出し
ているため、走査配線電極11上の絶縁層19の欠損部
分があっても黒点むら発生を防止することができる。
In this embodiment, since the insulating layer does not exist on the pixel wiring electrode 14 and the signal wiring electrode 12 and the electrodes are exposed, even if there is a defective portion of the insulating layer 19 on the scanning wiring electrode 11. The occurrence of black spot unevenness can be prevented.

【0023】但し、この構成ではTFT15上にも絶縁
層が存在しないため、60℃の雰囲気温度中の連続動作
によってTFT特性のシフトが発生した。TFT特性シ
フト量は表示に直接影響しない程度に収まったが、信頼
性確保の点からはシフト量の低減が望まれる。
However, in this configuration, since there is no insulating layer on the TFT 15, the TFT characteristics are shifted due to the continuous operation at an ambient temperature of 60 ° C. Although the shift amount of the TFT characteristic is small enough not to directly affect the display, it is desired to reduce the shift amount from the viewpoint of ensuring reliability.

【0024】(比較例1)画面の対角15.2インチ、
アスペクト比16:9、解像度が縦768X横1364
RGBのIPSモードTFT液晶パネルを以下のように
して作製した。このパネルの画素部のアレイ形状の平面
模式図は図1と同様であり、断面模式図を図3に示す。
Comparative Example 1 15.2 inch diagonal of screen
Aspect ratio 16: 9, resolution is 768 vertical x 1364 horizontal
An RGB IPS mode TFT liquid crystal panel was manufactured as follows. A schematic plan view of the array shape of the pixel portion of this panel is similar to FIG. 1, and a schematic cross-sectional view is shown in FIG.

【0025】図1、図3において、11は走査配線電
極、13は共通配線電極であり、図3に示すように基板
1の上に形成されている。走査配線電極11、共通配線
電極13は、アルミニウムを主成分とする金属膜を製膜
し、フォトリソグラフ法で同一平面状にパターン形成し
て作成した。次に、走査配線電極11及び共通配線電極
13を構成するアルミニウム膜の陽極酸化層19aと、
窒化珪素(SiNx)層19bからなる絶縁層19を形
成した。半導体層10としてアモルファスシリコンを堆
積した後、走査配線電極11上の陽極酸化層19aと窒
化珪素層19bの一部を取り除き、さらにスパッタリン
グ法によりアルミニウム/チタン(Al/Ti)の2層
を堆積させて薄膜トランジスタ(TFT)15、信号配
線電極12、画素配線電極14をフォトリソグラフ法で
パターン形成した。これにより、画素配線電極14と走
査配線電極11の間で蓄積容量16が形成された。さら
に画素部全面に絶縁層17として窒化珪素(SiNx)
を堆積した。
1 and 3, reference numeral 11 denotes a scanning wiring electrode, and 13 denotes a common wiring electrode, which is formed on the substrate 1 as shown in FIG. The scanning wiring electrode 11 and the common wiring electrode 13 were formed by forming a metal film containing aluminum as a main component and forming a pattern on the same plane by photolithography. Next, an anodic oxide layer 19a of an aluminum film constituting the scanning wiring electrode 11 and the common wiring electrode 13,
An insulating layer 19 made of a silicon nitride (SiNx) layer 19b was formed. After depositing amorphous silicon as the semiconductor layer 10, a part of the anodic oxide layer 19a and the silicon nitride layer 19b on the scanning wiring electrode 11 is removed, and two layers of aluminum / titanium (Al / Ti) are deposited by a sputtering method. The thin film transistor (TFT) 15, the signal wiring electrode 12, and the pixel wiring electrode 14 were patterned by photolithography. As a result, a storage capacitor 16 was formed between the pixel wiring electrode 14 and the scanning wiring electrode 11. Further, silicon nitride (SiNx) is used as an insulating layer 17 on the entire surface of the pixel portion.
Was deposited.

【0026】このアレイ基板とカラーフィルタ基板をギ
ャップ3.5μm間隔で貼り合わせ、液晶を真空注入し
てIPSパネルを形成した。注入した液晶は、p型成分
としてシアノ置換フェニルシクロヘキサンを主成分とす
るp型のネマチック液晶である。液晶は電界無印加時に
は上下基板間で捻れを持たずに配向しており、そのダイ
レクター方向は、走査配線電極11と80度の角度を成
している。偏光板は基板の上下に互いの偏光軸を直交さ
せ、かつ一方の偏光軸を液晶のダイレクター方向と一致
させて貼り付けた。
The array substrate and the color filter substrate were bonded at a gap of 3.5 μm, and liquid crystal was injected under vacuum to form an IPS panel. The injected liquid crystal is a p-type nematic liquid crystal mainly containing cyano-substituted phenylcyclohexane as a p-type component. The liquid crystal is aligned without twist between the upper and lower substrates when no electric field is applied, and its director direction forms an angle of 80 degrees with the scanning wiring electrode 11. The polarizing plate was attached on the upper and lower sides of the substrate so that the respective polarizing axes were orthogonal to each other, and one of the polarizing axes was aligned with the director direction of the liquid crystal.

【0027】走査配線電極11上の絶縁層19の欠損部
分をモデル的に作り込むために、走査配線電極11の一
部分にレーザービームを照射し、走査配線電極11部分
の絶縁層19の一部を除去した。
In order to model a defective portion of the insulating layer 19 on the scanning wiring electrode 11, a part of the scanning wiring electrode 11 is irradiated with a laser beam, and a part of the insulating layer 19 on the scanning wiring electrode 11 is removed. Removed.

【0028】このパネルに駆動回路を接続し、60℃の
雰囲気温度中で連続駆動させたところ、20時間で走査
配線電極11上の絶縁層の欠損部分から黒点むらの発生
が認められた。
When a driving circuit was connected to this panel and the panel was continuously driven at an ambient temperature of 60 ° C., black spots were found to be generated from a defective portion of the insulating layer on the scanning wiring electrode 11 in 20 hours.

【0029】本比較例では走査配線電極11上の絶縁層
19の欠損部分近傍の他の電極がすべて絶縁層17で被
覆されているため、比較的短時間で黒斑点が発生してし
まう。
In this comparative example, since all the other electrodes near the defective portion of the insulating layer 19 on the scanning wiring electrode 11 are covered with the insulating layer 17, black spots are generated in a relatively short time.

【0030】(実施の形態2)画面の対角15.2イン
チ、アスペクト比16:9、解像度が縦768X横13
64RGBのIPSモードTFT液晶パネルを以下のよ
うにして作製した。このパネルの画素部のアレイ形状の
平面模式図を図4に、断面模式図を図5に示す。
(Embodiment 2) The diagonal of the screen is 15.2 inches, the aspect ratio is 16: 9, and the resolution is 768 × 13.
A 64 RGB IPS mode TFT liquid crystal panel was produced as follows. FIG. 4 is a schematic plan view of an array shape of a pixel portion of this panel, and FIG. 5 is a schematic cross-sectional view thereof.

【0031】図4、図5において、11は走査配線電
極、13は共通配線電極であり、図5に示すように基板
1上に形成されている。走査配線電極11、共通配線電
極13は、アルミニウムを主成分とする金属膜を製膜
し、フォトリソグラフ法で同一平面状にパターン形成し
て作成した。走査配線電極11として使用する材料は配
線抵抗の低い金属が望ましいが、とくにアルミニウム系
金属に限定するものではなく、また、単層膜でも多層膜
であってもよい。次に、走査配線電極11及び共通配線
電極13を構成するアルミニウム膜の陽極酸化層19a
と、窒化珪素(SiNx)層19bからなる絶縁層19
を形成した。次に半導体層10としてアモルファスシリ
コンを堆積した後、走査配線電極11上の陽極酸化層1
9aと窒化珪素層19bの一部を取り除き、さらにスパ
ッタリング法によりアルミニウム/チタン(Al/T
i)の2層を堆積させて薄膜トランジスタ(TFT)1
5、信号配線電極12、画素配線電極14をフォトリソ
グラフ法でパターン形成した。これにより画素配線電極
14と走査配線電極11の間で蓄積容量16が形成され
た。さらに画素部全面に絶縁層17として窒化珪素(S
iNx)を堆積した。そして蓄積容量部16の画素配線
電極14上の絶縁層17の一部をフォトリソグラフ法で
除去し、電極露出部18をパターン形成した。この電極
露出部18の形状およびサイズには、とくに制約はな
く、図4および図5に示した形状は一例である。但し、
黒斑点防止のためには、電極露出部18の面積が大きい
ほうがより効果的である。
In FIGS. 4 and 5, reference numeral 11 denotes a scanning wiring electrode, and 13 denotes a common wiring electrode, which is formed on the substrate 1 as shown in FIG. The scanning wiring electrode 11 and the common wiring electrode 13 were formed by forming a metal film containing aluminum as a main component, and forming a pattern on the same plane by photolithography. The material used for the scanning wiring electrode 11 is preferably a metal having low wiring resistance, but is not particularly limited to an aluminum-based metal, and may be a single-layer film or a multilayer film. Next, an anodic oxide layer 19a of an aluminum film constituting the scanning wiring electrode 11 and the common wiring electrode 13
And an insulating layer 19 made of a silicon nitride (SiNx) layer 19b
Was formed. Next, after depositing amorphous silicon as the semiconductor layer 10, the anodic oxide layer 1 on the scanning wiring electrode 11 is formed.
9a and a portion of the silicon nitride layer 19b are removed, and aluminum / titanium (Al / T
i) two layers are deposited to form a thin film transistor (TFT) 1
5, the pattern of the signal wiring electrode 12 and the pixel wiring electrode 14 were formed by photolithography. As a result, a storage capacitor 16 was formed between the pixel wiring electrode 14 and the scanning wiring electrode 11. Further, silicon nitride (S
iNx). Then, a part of the insulating layer 17 on the pixel wiring electrode 14 of the storage capacitor 16 was removed by photolithography to form an electrode exposed portion 18 in a pattern. The shape and size of the electrode exposed portion 18 are not particularly limited, and the shapes shown in FIGS. 4 and 5 are examples. However,
In order to prevent black spots, it is more effective that the area of the electrode exposed portion 18 is large.

【0032】このアレイ基板とカラーフィルタ基板をギ
ャップ3.5μm間隔で貼り合わせ、液晶を真空注入し
てIPSパネルを形成した。注入した液晶は、p型成分
としてシアノ置換フェニルシクロヘキサンを主成分とす
るp型のネマチック液晶である。液晶は電界無印加時に
は上下基板間で捻れを持たずに配向しており、そのダイ
レクター方向は、走査配線電極11と80度の角度を成
している。偏光板は基板の上下に互いの偏光軸を直交さ
せ、かつ一方の偏光軸を液晶のダイレクター方向と一致
させて貼り付けた。
The array substrate and the color filter substrate were bonded at a gap of 3.5 μm, and liquid crystal was injected under vacuum to form an IPS panel. The injected liquid crystal is a p-type nematic liquid crystal mainly containing cyano-substituted phenylcyclohexane as a p-type component. The liquid crystal is aligned without twist between the upper and lower substrates when no electric field is applied, and its director direction forms an angle of 80 degrees with the scanning wiring electrode 11. The polarizing plate was attached on the upper and lower sides of the substrate so that the respective polarizing axes were orthogonal to each other, and one of the polarizing axes was aligned with the director direction of the liquid crystal.

【0033】走査配線電極11上の絶縁層19の欠損部
分をモデル的に作り込むために、走査配線電極部分にレ
ーザービームを照射し、走査配線電極11部分の絶縁層
19の一部を除去した。
In order to model a defective portion of the insulating layer 19 on the scanning wiring electrode 11, a laser beam was irradiated to the scanning wiring electrode portion, and a part of the insulating layer 19 at the scanning wiring electrode 11 was removed. .

【0034】このパネルに駆動回路を接続し、60℃の
雰囲気温度中で500時間まで連続駆動させたが、走査
配線電極11上の絶縁層19の欠損部分から黒点むらの
発生は認められなかった。
A driving circuit was connected to this panel, and the panel was continuously driven at an ambient temperature of 60 ° C. for up to 500 hours, but no black spot unevenness was observed from a defective portion of the insulating layer 19 on the scanning wiring electrode 11. .

【0035】本実施の形態では、電極露出部18におい
て画素配線電極14の一部が露出しているため、走査配
線電極11上の絶縁層の欠損部分があっても黒点むら発
生を防止することができる。本実施の形態では、画素配
線電極14の一部を露出させたが、信号配線電極12ま
たは共通配線電極13を露出させても同様な効果が得ら
れる。
In the present embodiment, since a part of the pixel wiring electrode 14 is exposed in the electrode exposed portion 18, even if there is a defective portion of the insulating layer on the scanning wiring electrode 11, it is possible to prevent black spot unevenness from occurring. Can be. Although a part of the pixel wiring electrode 14 is exposed in the present embodiment, the same effect can be obtained by exposing the signal wiring electrode 12 or the common wiring electrode 13.

【0036】また、この構成ではTFT15上には絶縁
層17が存在するため、60℃の雰囲気温度中の連続動
作によってもTFT特性のシフトはほとんど発生せず、
素子の信頼性上もまったく問題がない。
In this configuration, since the insulating layer 17 is present on the TFT 15, the TFT characteristics hardly shift even by continuous operation at an ambient temperature of 60 ° C.
There is no problem in the reliability of the device.

【0037】(実施の形態3)画面の対角15.2イン
チ、アスペクト比16:9、解像度が縦768X横13
64RGBのIPSモードTFT液晶パネルを以下のよ
うにして作製した。このパネルの画素部のアレイ形状の
平面模式図は図1と同様であり、断面模式図は図6に示
す。
(Embodiment 3) The diagonal of the screen is 15.2 inches, the aspect ratio is 16: 9, and the resolution is 768 × 13.
A 64 RGB IPS mode TFT liquid crystal panel was produced as follows. A schematic plan view of the array shape of the pixel portion of this panel is the same as FIG. 1, and a schematic cross-sectional view is shown in FIG.

【0038】図1および6において、11は走査配線電
極、13は共通配線電極であり、図6に示すように基板
1上に形成されている。走査配線電極11、共通配線電
極13は、アルミニウムを主成分とする金属膜を製膜
し、フォトリソグラフ法で同一平面状にパターン形成し
て作成した。走査配線電極11として使用する材料は配
線抵抗の低い金属が望ましいが、とくにアルミニウム系
金属に限定するものではなく、また、単層膜でも多層膜
であってもよい。次に、走査配線電極11及び共通配線
電極13を構成するアルミニウム膜の陽極酸化層19a
と、窒化珪素(SiNx)層19bからなる絶縁層19
を形成した。次に、半導体層10としてアモルファスシ
リコンを堆積した後、走査配線電極11上の陽極酸化層
19aと窒化珪素層19bの一部を取り除き、さらにス
パッタリング法によりアルミニウム/チタン(Al/T
i)の2層を堆積させて薄膜トランジスタ(TFT)1
5、信号配線電極12、画素配線電極14をフォトリソ
グラフ法でパターン形成した。これにより画素配線電極
14と走査配線電極11の間で蓄積容量16が形成され
た。さらに画素部全面に絶縁層17として窒化珪素(S
iNx)を堆積した。
1 and 6, reference numeral 11 denotes a scanning wiring electrode, and 13 denotes a common wiring electrode, which is formed on the substrate 1 as shown in FIG. The scanning wiring electrode 11 and the common wiring electrode 13 were formed by forming a metal film containing aluminum as a main component and forming a pattern on the same plane by photolithography. The material used for the scanning wiring electrode 11 is preferably a metal having low wiring resistance, but is not particularly limited to an aluminum-based metal, and may be a single-layer film or a multilayer film. Next, an anodic oxide layer 19a of an aluminum film constituting the scanning wiring electrode 11 and the common wiring electrode 13
And an insulating layer 19 made of a silicon nitride (SiNx) layer 19b
Was formed. Next, after depositing amorphous silicon as the semiconductor layer 10, a part of the anodic oxide layer 19a and the silicon nitride layer 19b on the scanning wiring electrode 11 is removed, and aluminum / titanium (Al / T
i) two layers are deposited to form a thin film transistor (TFT) 1
5, the pattern of the signal wiring electrode 12 and the pixel wiring electrode 14 were formed by photolithography. As a result, a storage capacitor 16 was formed between the pixel wiring electrode 14 and the scanning wiring electrode 11. Further, silicon nitride (S
iNx).

【0039】このアレイ基板とカラーフィルタ基板をギ
ャップ3.5μm間隔で貼り合わせ、液晶を真空注入し
てIPSパネルを形成した。注入した液晶は、p型成分
としてシアノ置換フェニルシクロヘキサンを主成分とす
るp型のネマチック液晶である。液晶は電界無印加時に
は上下基板間で捻れを持たずに配向しており、そのダイ
レクター方向は、走査配線電極11と80度の角度を成
している。偏光板は基板の上下に互いの偏光軸を直交さ
せ、かつ一方の偏光軸を液晶のダイレクター方向と一致
させて貼り付けた。
The array substrate and the color filter substrate were bonded with a gap of 3.5 μm, and liquid crystal was injected under vacuum to form an IPS panel. The injected liquid crystal is a p-type nematic liquid crystal mainly containing cyano-substituted phenylcyclohexane as a p-type component. The liquid crystal is aligned without twist between the upper and lower substrates when no electric field is applied, and its director direction forms an angle of 80 degrees with the scanning wiring electrode 11. The polarizing plate was attached on the upper and lower sides of the substrate so that the respective polarizing axes were orthogonal to each other, and one of the polarizing axes was aligned with the director direction of the liquid crystal.

【0040】走査配線電極11上の絶縁層19の欠損部
分をモデル的に作り込むために、走査配線電極11の一
部分にレーザービームを照射し、走査配線電極11上の
絶縁層19の一部を除去した。この時に欠損部に隣接す
る共通配線電極13の部分にもレーザービームを照射し
て、共通配線電極13上の絶縁層17を部分的に除去し
た。
In order to model a defective portion of the insulating layer 19 on the scanning wiring electrode 11, a part of the scanning wiring electrode 11 is irradiated with a laser beam, and a part of the insulating layer 19 on the scanning wiring electrode 11 is removed. Removed. At this time, the portion of the common wiring electrode 13 adjacent to the defective portion was also irradiated with a laser beam to partially remove the insulating layer 17 on the common wiring electrode 13.

【0041】このパネルに駆動回路を接続し、60℃の
雰囲気温度中で連続駆動させたところ、約150時間ま
では走査配線電極上の絶縁層の欠損部分から黒点むらの
発生は認められなかった。150時間で微小な黒点むら
の発生が認められた。
When a driving circuit was connected to this panel and the panel was continuously driven at an ambient temperature of 60 ° C., no black spot unevenness was observed from a defective portion of the insulating layer on the scanning wiring electrode until about 150 hours. . At 150 hours, generation of minute black spots was observed.

【0042】また、走査配線電極11上の絶縁層19の
欠損部を中心に絶縁層19の欠損部を取り囲むように、
約100μmの距離にある共通配線電極13の絶縁層1
9をレーザービームを用いて除去すると、60℃の雰囲
気温度中で連続駆動を500時間させても黒点むらは発
生しなかった。
Also, the defective portion of the insulating layer 19 is surrounded by the defective portion of the insulating layer 19 on the scanning wiring electrode 11.
The insulating layer 1 of the common wiring electrode 13 at a distance of about 100 μm
When 9 was removed using a laser beam, black spots did not occur even after continuous driving for 500 hours at an ambient temperature of 60 ° C.

【0043】本実施の形態では、走査配線電極11上の
絶縁層19の欠損部分近傍の共通配線電極13が一部露
出しているため、走査配線電極11の絶縁層19に欠損
部分があっても黒点むら発生を抑制することができる。
In this embodiment, since the common wiring electrode 13 near the defective portion of the insulating layer 19 on the scanning wiring electrode 11 is partially exposed, there is a defective portion in the insulating layer 19 of the scanning wiring electrode 11. Also, the occurrence of black spot unevenness can be suppressed.

【0044】この黒点むら抑制効果は、走査配線電極1
1の絶縁層欠損部分を別の電極の露出部分で取り囲むこ
とにより、さらに効果的となる。本実施の形態では、共
通配線電極13の一部を露出させたが、信号配線電極1
2または画素配線電極14を露出させても同様な効果が
得られる。
The effect of suppressing black spot unevenness is due to the fact that the scanning wiring electrode 1
It is more effective to surround one defective portion of the insulating layer with the exposed portion of another electrode. In the present embodiment, a part of the common wiring electrode 13 is exposed, but the signal wiring electrode 1 is exposed.
The same effect can be obtained even if the second or pixel wiring electrode 14 is exposed.

【0045】黒点むらは半径が0.5mm以上になると
はっきりと認識されるため、走査配線電極11上の絶縁
層の欠損部分から最大0.5mm以内の距離に電極露出
部を形成することが好ましい。さらに好ましくは、0.
2mm以内に形成するとよい。
Since the black spot unevenness is clearly recognized when the radius is 0.5 mm or more, it is preferable to form the electrode exposed portion within a distance of at most 0.5 mm from a defective portion of the insulating layer on the scanning wiring electrode 11. . More preferably, it is 0.
It is good to form within 2 mm.

【0046】この構成でもTFT15上には絶縁層17
が存在するため、60℃の雰囲気温度中の連続動作によ
ってもTFT特性のシフトはほとんど発生しないことは
言うまでもない。
Also in this configuration, the insulating layer 17 is formed on the TFT 15.
, It is needless to say that the TFT characteristics hardly shift even by continuous operation at an ambient temperature of 60 ° C.

【0047】なお、本発明の実施の形態においては、走
査配線電極11と画素配線電極14の間で蓄積容量16
を形成したTFTアレイの例について述べたが、共通配
線電極13と画素配線電極14の間で蓄積容量を形成し
た場合でも同様の効果が得られる。
In the embodiment of the present invention, the storage capacitor 16 is provided between the scanning wiring electrode 11 and the pixel wiring electrode 14.
Has been described above, but the same effect can be obtained when a storage capacitor is formed between the common wiring electrode 13 and the pixel wiring electrode 14.

【0048】[0048]

【発明の効果】本発明の液晶表示パネルおよびその製造
方法によれば、走査配線上の絶縁層にピンホール等の欠
損が存在する場合でも黒点むらが発生しにくい液晶表示
装置を得ることができ、容易に表示品位の高いパネルを
製造することが可能である。
According to the liquid crystal display panel and the method of manufacturing the same of the present invention, it is possible to obtain a liquid crystal display device in which black spot unevenness is unlikely to occur even when a defect such as a pinhole exists in an insulating layer on a scanning wiring. It is possible to easily manufacture a panel with high display quality.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施の形態1、3および比較例にお
ける液晶表示パネルの画素部を示す平面模式図
FIG. 1 is a schematic plan view showing a pixel portion of a liquid crystal display panel according to Embodiments 1 and 3 of the present invention and a comparative example.

【図2】 本発明の実施の形態1における液晶表示パネ
ルの画素部を示す断面模式図
FIG. 2 is a schematic cross-sectional view illustrating a pixel portion of a liquid crystal display panel in Embodiment 1 of the present invention.

【図3】 本発明の比較例における液晶表示パネルの画
素部を示す断面模式図
FIG. 3 is a schematic cross-sectional view showing a pixel portion of a liquid crystal display panel according to a comparative example of the present invention.

【図4】 本発明の実施の形態2における液晶表示パネ
ルの画素部を示す平面模式図
FIG. 4 is a schematic plan view illustrating a pixel portion of a liquid crystal display panel according to Embodiment 2 of the present invention.

【図5】 本発明の実施の形態2における液晶表示パネ
ルの画素部を示す断面模式図
FIG. 5 is a schematic cross-sectional view illustrating a pixel portion of a liquid crystal display panel in Embodiment 2 of the present invention.

【図6】 本発明の実施の形態3における液晶表示パネ
ルの画素部を示す断面模式図
FIG. 6 is a schematic cross-sectional view illustrating a pixel portion of a liquid crystal display panel in Embodiment 3 of the present invention.

【図7】 黒点むらの発生メカニズムを示す模式図FIG. 7 is a schematic diagram showing the mechanism of occurrence of black spot unevenness.

【符号の説明】[Explanation of symbols]

10 半導体層 11 走査配線電極 12 信号配線電極 13 共通配線電極 14 画素配線電極 15 薄膜トランジスタ(TFT) 16 蓄積容量 17、19 絶縁層(SiNx) 18 電極露出部 20 アレイ基板 Reference Signs List 10 semiconductor layer 11 scanning wiring electrode 12 signal wiring electrode 13 common wiring electrode 14 pixel wiring electrode 15 thin film transistor (TFT) 16 storage capacitor 17, 19 insulating layer (SiNx) 18 electrode exposed part 20 array substrate

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成12年4月3日(2000.4.3)[Submission date] April 3, 2000 (200.4.3)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】請求項1[Correction target item name] Claim 1

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】請求項2[Correction target item name] Claim 2

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0011[Correction target item name] 0011

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0011】そして、第1の本発明にかかる液晶表示パ
ネルは、画素配線電極、信号配線電極及び共通配線電極
のうちの少なくともいずれかの電極の一部のみが、配向
膜のみを介して、または直接に液晶組成物と接している
ことを特徴とする。画素配線電極、信号配線電極、共通
配線電極の少なくともいずれかの電極の一部を露出させ
て、配向膜のみを介してか、または直接に液晶組成物と
接するようにした構成は、信号配線電極や画素配線電極
上に部分的に絶縁層を形成しないか、絶縁層を形成した
後、部分的に絶縁層を除去することによって形成可能で
ある。
In the liquid crystal display panel according to the first aspect of the present invention, at least a part of at least one of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode is provided only through the alignment film or It is characterized by being in direct contact with a liquid crystal composition. The pixel wiring electrode, the signal wiring electrode, and a configuration in which at least a part of the electrode of the common wiring electrode is exposed to be in contact with the liquid crystal composition only through the alignment film or directly to the signal wiring electrode Alternatively, it can be formed by not forming an insulating layer partially on the pixel wiring electrode or by forming the insulating layer and then removing the insulating layer partially.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0012[Correction target item name] 0012

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0012】第2の本発明にかかる液晶表示パネルは、
画素配線電極、信号配線電極及び共通配線電極のうちの
少なくともいずれかの電極の一部のみが、配向膜のみを
介して、または直接に液晶組成物と接しており、かつ薄
膜トランジスタ部分の上部には絶縁層が存在することを
特徴とする。信号配線電極や画素配線電極上に形成する
絶縁層は、TFT特性の変化を抑える役目も持ってお
り、薄膜トランジスタ部分の上部には絶縁層を形成する
ことにより、TFT特性の変化を抑制することができ
る。絶縁層の部分除去はフォトリソグラフ法等により容
易に行うことができる。
A liquid crystal display panel according to a second aspect of the present invention comprises:
Only a part of at least one of the pixel wiring electrode, the signal wiring electrode and the common wiring electrode is in contact with the liquid crystal composition only through the alignment film, or directly on the thin film transistor part. An insulating layer is present. The insulating layer formed on the signal wiring electrode and the pixel wiring electrode also has a role of suppressing a change in the TFT characteristics. By forming an insulating layer on the thin film transistor portion, the change in the TFT characteristics can be suppressed. it can. Partial removal of the insulating layer can be easily performed by a photolithographic method or the like.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H090 HA03 HB03X HD05 LA01 LA04 LA09 MA01 2H092 GA14 JA26 JB33 JB56 JB64 KA05 KB04 MA05 MA13 MA24 MA37 NA01 PA02 PA08 PA11 5C094 AA03 BA03 BA43 CA19 EA03 EA04 EA07 GA10 GB01 5F110 AA03 AA26 CC07 EE03 EE04 EE14 EE44 FF01 FF03 FF09 FF24 GG02 GG15 HK03 HK04 HK21 HK33 HM18 NN02 NN24 NN72  ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2H090 HA03 HB03X HD05 LA01 LA04 LA09 MA01 2H092 GA14 JA26 JB33 JB56 JB64 KA05 KB04 MA05 MA13 MA24 MA37 NA01 PA02 PA08 PA11 5C094 AA03 BA03 BA43 CA19 EA03 EA04 EA07 AGA10A01 5 EE03 EE04 EE14 EE44 FF01 FF03 FF09 FF24 GG02 GG15 HK03 HK04 HK21 HK33 HM18 NN02 NN24 NN72

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも一方が透明な一対の基板と、
該基板間に挟持され配向した誘電率異方性と屈折率異方
性とを有する液晶組成物層と、偏光手段と、前記基板上
にマトリクス状に配置された複数の画素と、画素配線電
極と、信号配線電極と、走査配線電極と、前記画素ごと
に設けられ前記画素配線電極、前記信号配線電極及び前
記走査配線電極に接続された薄膜トランジスタ素子と、
共通配線電極と、前記画素の光透過率または反射率を変
化させる信号波形電圧を印加する手段とを備え、前記信
号波形電圧による電界が、前記画素配線電極と前記共通
配線電極との間に前記基板面に略平行に印加されるよう
に構成された液晶表示パネルにおいて、 前記画素配線電極、前記信号配線電極及び前記共通配線
電極のうちの少なくともいずれかの電極の少なくとも一
部が、前記配向膜のみを介して、または直接に前記液晶
組成物と接していることを特徴とする液晶表示パネル。
1. A pair of substrates, at least one of which is transparent;
A liquid crystal composition layer having a dielectric anisotropy and a refractive index anisotropy aligned and sandwiched between the substrates, a polarizing means, a plurality of pixels arranged in a matrix on the substrate, and a pixel wiring electrode A signal wiring electrode, a scanning wiring electrode, a thin film transistor element provided for each pixel, the pixel wiring electrode, the thin film transistor element connected to the signal wiring electrode and the scanning wiring electrode,
A common wiring electrode, and means for applying a signal waveform voltage for changing the light transmittance or the reflectance of the pixel, wherein an electric field due to the signal waveform voltage is applied between the pixel wiring electrode and the common wiring electrode. In a liquid crystal display panel configured to be applied substantially parallel to a substrate surface, at least a part of at least one of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode includes the alignment film. A liquid crystal display panel, which is in contact with the liquid crystal composition via only or directly.
【請求項2】 少なくとも一方が透明な一対の基板と、
該基板間に挟持され配向した誘電率異方性と屈折率異方
性とを有する液晶組成物層と、偏光手段と、前記基板上
にマトリクス状に配置された複数の画素と、画素配線電
極と、信号配線電極と、走査配線電極と、前記画素ごと
に設けられ前記画素配線電極、前記信号配線電極及び前
記走査配線電極に接続された薄膜トランジスタ素子と、
共通配線電極と、前記画素の光透過率または反射率を変
化させる信号波形電圧を印加する手段とを備え、前記信
号波形電圧による電界が、前記画素配線電極と前記共通
配線電極との間に前記基板面に略平行に印加されるよう
に構成された液晶表示パネルにおいて、 前記画素配線電極、前記信号配線電極及び共通配線電極
のうちの少なくともいずれかの電極の少なくとも一部
が、配向膜のみを介して、または直接に液晶組成物と接
しており、かつ薄膜トランジスタ部分の上部には絶縁層
が存在することを特徴とする液晶表示パネル。
2. A pair of substrates at least one of which is transparent;
A liquid crystal composition layer having a dielectric anisotropy and a refractive index anisotropy aligned and sandwiched between the substrates, a polarizing means, a plurality of pixels arranged in a matrix on the substrate, and a pixel wiring electrode A signal wiring electrode, a scanning wiring electrode, a thin film transistor element provided for each pixel, the pixel wiring electrode, the thin film transistor element connected to the signal wiring electrode and the scanning wiring electrode,
A common wiring electrode, and means for applying a signal waveform voltage for changing the light transmittance or the reflectance of the pixel, wherein an electric field due to the signal waveform voltage is applied between the pixel wiring electrode and the common wiring electrode. In a liquid crystal display panel configured to be applied substantially parallel to a substrate surface, at least a part of at least one of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode includes only an alignment film. A liquid crystal display panel which is in direct contact with a liquid crystal composition through or directly, and has an insulating layer over a thin film transistor portion.
【請求項3】 少なくとも一方が透明な一対の基板と、
該基板間に挟持され配向した誘電率異方性と屈折率異方
性とを有する液晶組成物層と、偏光手段と、前記基板上
にマトリクス状に配置された複数の画素と、画素配線電
極と、信号配線電極と、走査配線電極と、前記画素ごと
に設けられ前記画素配線電極、前記信号配線電極及び前
記走査配線電極に接続された薄膜トランジスタ素子と、
共通配線電極と、前記画素の光透過率または反射率を変
化させる信号波形電圧を印加する手段を備え、前記信号
波形電圧による電界が、前記画素配線電極と前記共通配
線電極との間に前記基板面に略平行に印加されるように
構成された液晶表示パネルにおいて、 前記走査配線電極上に存在する絶縁層欠落部分の近傍
に、前記画素配線電極、前記信号配線電極及び前記共通
配線電極のうちの少なくともいずれかの電極が配向膜の
みを介して、または直接に液晶組成物と接している部分
を設けたことを特徴とする液晶表示パネル。
3. A pair of substrates, at least one of which is transparent;
A liquid crystal composition layer having a dielectric anisotropy and a refractive index anisotropy aligned and sandwiched between the substrates, a polarizing means, a plurality of pixels arranged in a matrix on the substrate, and a pixel wiring electrode A signal wiring electrode, a scanning wiring electrode, a thin film transistor element provided for each pixel, the pixel wiring electrode, the thin film transistor element connected to the signal wiring electrode and the scanning wiring electrode,
A common wiring electrode, and means for applying a signal waveform voltage for changing light transmittance or reflectance of the pixel, wherein an electric field due to the signal waveform voltage causes the substrate to be interposed between the pixel wiring electrode and the common wiring electrode. In a liquid crystal display panel configured to be applied substantially in parallel to a surface, a portion of the pixel wiring electrode, the signal wiring electrode, and the common wiring electrode in the vicinity of an insulating layer missing portion present on the scanning wiring electrode. A liquid crystal display panel provided with a portion in which at least one of the electrodes is in direct contact with the liquid crystal composition via only the alignment film or directly.
【請求項4】 少なくとも一方が透明な一対の基板と、
該基板間に挟持され配向した誘電率異方性と屈折率異方
性とを有する液晶組成物層と、偏光手段と、前記基板上
にマトリクス状に配置された複数の画素と、画素配線電
極と、信号配線電極と、走査配線電極と、前記画素ごと
に設けられ前記画素配線電極、前記信号配線電極及び前
記走査配線電極に接続された薄膜トランジスタ素子と、
共通配線電極と、前記画素の光透過率または反射率を変
化させる信号波形電圧を印加する手段を備え、前記信号
波形電圧による電界が、前記画素配線電極と前記共通配
線電極との間に前記基板面に略平行に印加されるように
構成された液晶表示パネルにおいて、 前記走査配線電極上に絶縁層欠落部分が存在する場合、
該絶縁層欠落部分の近傍における、前記画素配線電極、
前記信号配線電極及び前記共通配線電極のうちの少なく
ともいずれかの電極に、当該電極が配向膜のみを介し
て、または直接に液晶組成物と接する部分を、レーザー
ビームを照射することにより形成することを特徴とする
液晶表示パネルの製造方法。
4. A pair of substrates, at least one of which is transparent,
A liquid crystal composition layer having a dielectric anisotropy and a refractive index anisotropy aligned and sandwiched between the substrates, a polarizing means, a plurality of pixels arranged in a matrix on the substrate, and a pixel wiring electrode A signal wiring electrode, a scanning wiring electrode, a thin film transistor element provided for each pixel, the pixel wiring electrode, the thin film transistor element connected to the signal wiring electrode and the scanning wiring electrode,
A common wiring electrode, and means for applying a signal waveform voltage for changing light transmittance or reflectance of the pixel, wherein an electric field due to the signal waveform voltage causes the substrate to be interposed between the pixel wiring electrode and the common wiring electrode. In a liquid crystal display panel configured to be applied substantially parallel to the surface, when there is an insulating layer missing part on the scanning wiring electrode,
In the vicinity of the insulating layer missing portion, the pixel wiring electrode,
At least one of the signal wiring electrode and the common wiring electrode is formed by irradiating a laser beam at a portion where the electrode is in direct contact with the liquid crystal composition via only the alignment film or directly. A method for manufacturing a liquid crystal display panel, comprising:
JP21872199A 1999-08-02 1999-08-02 Liquid crystal display panel and method of manufacturing the same Expired - Fee Related JP3209730B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21872199A JP3209730B2 (en) 1999-08-02 1999-08-02 Liquid crystal display panel and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21872199A JP3209730B2 (en) 1999-08-02 1999-08-02 Liquid crystal display panel and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JP2001042359A true JP2001042359A (en) 2001-02-16
JP3209730B2 JP3209730B2 (en) 2001-09-17

Family

ID=16724408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21872199A Expired - Fee Related JP3209730B2 (en) 1999-08-02 1999-08-02 Liquid crystal display panel and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP3209730B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016095307A1 (en) * 2014-12-19 2016-06-23 深圳市华星光电技术有限公司 Array substrate and display apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016095307A1 (en) * 2014-12-19 2016-06-23 深圳市华星光电技术有限公司 Array substrate and display apparatus
US9836155B2 (en) 2014-12-19 2017-12-05 Shenzhen China Star Optoelectrics Technology Co., Ltd. Array substrate and display device

Also Published As

Publication number Publication date
JP3209730B2 (en) 2001-09-17

Similar Documents

Publication Publication Date Title
US8314915B2 (en) Liquid crystal display panel
US7379145B2 (en) In-plane switching mode liquid crystal display device and method of fabricating the same
JP5148819B2 (en) Liquid crystal display element
JPH0736058A (en) Active matrix type liquid crystal display device
JP2008058337A (en) Display device, liquid crystal display, and manufacturing method of display device,
KR20060001662A (en) In plane switching mode liquid crystal display device and method for fabricating thereof
KR101258129B1 (en) Liquid crystal display, manufacturing method thereof, and repairing method thereof
US7599036B2 (en) In-plane switching active matrix liquid crystal display apparatus
KR101093253B1 (en) In-Plane Switching mode LCD and the fabrication method thereof
US7365819B2 (en) In-plane switching mode liquid crystal display device and method of fabricating the same
JP4875702B2 (en) Transflective liquid crystal display device and manufacturing method thereof
RU2511647C1 (en) Liquid crystal display panel and liquid crystal display device
JP2009025639A (en) Liquid crystal display device and manufacturing method of liquid crystal display device
JP3346354B2 (en) LCD panel
JP2003241155A (en) Liquid crystal display device, and method and device for correcting defect of the liquid crystal display device
JP3209730B2 (en) Liquid crystal display panel and method of manufacturing the same
JP2002040400A (en) Liquid crystal display device
KR20020017436A (en) In-plane switching mode liquid crystal display device and method for manufacturing the same
JP2008116866A (en) Liquid crystal display
US9599868B2 (en) Liquid crystal display panel comprising a contact site for a pixel electrode that is wider than a line portion of a lead-out line when viewed in a plan view
JPH10228032A (en) Active matrix type liquid crystal display device
KR101604273B1 (en) Liquid crystal display device and method of fabricating the same
JPH0915619A (en) Active matrix type liquid crystal display device
JP3778407B2 (en) Method for correcting defects in active matrix substrate and method for manufacturing liquid crystal panel
KR20070060815A (en) Method for manufacturing liquid crystal display device having wide viewing angle using ion beam and liquid crystal display dievice having wide viewing

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20070713

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080713

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090713

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090713

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100713

Year of fee payment: 9

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110713

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120713

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130713

Year of fee payment: 12

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130713

Year of fee payment: 12

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140713

Year of fee payment: 13

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees