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基板上に高分子材料膜を形成し、該高分子材料膜上に導電体膜を形成し、該導電体膜上に更にレジスト膜を形成し、該レジスト膜にリソグラフィ技術を用いて、微細パターンを形成し、前記導電体膜に対してエッチングを行い前記微細パターンを転写し、該導電体膜に転写された前記微細パターンをマスクとして前記高分子材料膜に対して反応性を有するガスを用いた高速原子線の照射によって、該高分子材料膜のエッチングを行い、該高分子材料膜に前記微細パターンを転写することを特徴とする微細パターンの転写加工方法。The high molecular material film is formed on a substrate, forming a conductive film on a polymer material film, further to form a record resist film conductive film on a lithographic technique 該Re resist film used to form a fine pattern, prior to transferring the fine pattern etched against Kishirube conductor film, before Symbol high molecular material film using the fine pattern transferred to the conductive film as a mask A method of transferring a fine pattern, comprising etching the polymer material film by irradiating the polymer material film with a high-speed atomic beam using a reactive gas, and transferring the fine pattern to the polymer material film. .前記導電体膜のエッチングは、該導電体膜に対して反応性を有するガスを用いた高速原子線の照射によって、行われることを特徴とする請求項１に記載の微細パターンの転写加工方法。2. The method according to claim 1, wherein the etching of the conductive film is performed by irradiation with a high-speed atomic beam using a gas reactive with the conductive film. 3.前記高分子材料膜に形成された微細パターンを備えた基板上に異種材料膜を被着し、前記高分子材料膜を溶解することで、リフトオフにより異種材料膜の微細パターンを前記基板上に形成することを特徴とする請求項１又は２に記載の微細パターンの転写加工方法。A heterogeneous material film is deposited on a substrate having a fine pattern formed on the polymer material film, and the polymer material film is dissolved to form a fine pattern of the heterogeneous material film on the substrate by lift-off. 3. The method according to claim 1, wherein the fine pattern is transferred.前記異種材料膜の微細パターンとして、前記基板上に導電材料からなるコイルが形成されたことを特徴とする請求項３に記載の微細パターンの転写加工方法。4. The method for transferring a fine pattern according to claim 3, wherein a coil made of a conductive material is formed on the substrate as the fine pattern of the dissimilar material film.前記基板上には半導体素子が形成され、導電材料からなる微細配線が形成され、前記半導体素子を接続することを特徴とする請求項３に記載の微細パターンの転写加工方法。4. The method of transferring a fine pattern according to claim 3, wherein a semiconductor element is formed on the substrate, fine wiring made of a conductive material is formed, and the semiconductor element is connected.
JP21095099A1999-07-261999-07-26Method for transferring fine pattern
PendingJP2001033979A
(en)