JP2001015433A - Circuit device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a circuit device, in which elements formed on a plurality of substrates mixedly exist, and provide a method for manufacturing the device. SOLUTION: A circuit device 100 is formed on a first substrate 10, on which a first element group 30 containing at least one element, a second element group 12 containing at least one element, and thin-film conductor wiring 18 which electrically connects the first and second element groups 30 and 12 to each other are provided. The wiring 18 is formed by using metal wiring technology. The first substrate 10 has a recessed section 22 for the second element group 12. It is preferable to form the recessed section 22 according to the shape of the second element group 12. The element group 12 is fitted and fixed in the recessed section 22. Since the element group 12 is fitted and fixed in the recessed section 22, the thin-film conductor wiring 18 can be formed with accuracy, and the reliability of the circuit device 100 can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a circuit device and a method of manufacturing the same, and more particularly, to a circuit device in which elements formed on a plurality of substrates are mixed and a method of manufacturing the same.

[0002]

2. Description of the Related Art At present, there are various methods for forming a circuit device which realizes a required function according to a purpose and an application. First, as a typical circuit forming method, there is a method of attaching circuit components to a printed circuit board by soldering.
Although this method is simple, it has a drawback that it is not suitable for downsizing the circuit.

There is also a method in which wiring is formed on an insulating substrate such as alumina, a circuit component is mounted on the substrate, and a circuit is formed by connecting the wiring and the component with a gold wire. Although this method is simple, it is very difficult to strictly define the length and shape of the gold wire, and an indefinite capacity or the like occurs at the gold wire portion. Therefore, this method has a disadvantage that it is not suitable for forming a circuit that operates at high speed.

There is also an integrated circuit forming method for simultaneously forming elements and wirings on the same substrate by a semiconductor process.
This method enables the shape and length of wiring to be formed with good reproducibility by a semiconductor process, and is suitable for miniaturization of circuits. However, this method has a drawback that a substrate to be used is limited and a complicated process is required depending on the type of element to be formed.

In a semiconductor circuit using a compound semiconductor, an active element portion is often formed by crystal growth. In the conventional integrated circuit technology, it has been very difficult to form elements having completely different layer structures, such as a bipolar transistor and a field-effect transistor, on the same substrate at once without deteriorating the characteristics of both. For example, "IEE
E Microwave and Guided Wave Lett vol.7, pp222-224,
1997 "discloses a method for forming bipolar transistors and field effect transistors by selective growth on a compound semiconductor substrate. This method complicates the circuit manufacturing process and consequently increases the circuit manufacturing time. In addition, this method has the disadvantage that the cost of the semiconductor manufacturing equipment to be used increases, the unit price of the semiconductor circuit to be manufactured increases, and further, this method has the disadvantage that the substrate material is restricted.

Further, it is necessary to perform aging (burn-in) in the initial state of the dielectric film, which is a component of the capacitor element, in order to obtain stable characteristics. Therefore, the newly formed dielectric film is usually subjected to a heat treatment. However, since transistors such as active elements are not suitable for high-temperature processing, a complicated process is required to form both a dielectric film and a transistor on the same substrate.

[0007]

At present, various circuit forming techniques as described above have been established, but all of these methods have various disadvantages. An object of the present invention is to provide a novel circuit device forming method capable of reducing the disadvantages of the conventional circuit forming technology.

In the conventional integrated circuit technology, it is impossible to integrate an element made of an elemental semiconductor such as Si and an element made of a compound semiconductor such as GaAs on the same substrate. . An object of the present invention is to provide a semiconductor circuit device in which semiconductor elements made of different materials are integrated.

Accordingly, an object of the present invention is to provide a circuit device and a method of manufacturing the same which can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0010]

In order to solve the above-mentioned problems, a first embodiment of the present invention is directed to a first embodiment in which a first element is formed.
A circuit comprising: a substrate; a second element formed on a second substrate and fixed to the first substrate; and a thin-film conductor wiring for electrically connecting the first element and the second element. Provide equipment. According to the first aspect of the present invention, the first element and the second element are connected by a thin film conductor wiring,
It is possible to improve the reliability of a circuit device that performs a high-speed operation.

[0011] In one embodiment of the first mode, the second element may be attached and fixed to the first substrate.

[0012] In another aspect of the first aspect, the second aspect
The element may be fitted and fixed in a recess provided in the first substrate.

[0013] In still another aspect of the first aspect, the second substrate may be made of a semiconductor material. Second
When the substrate is made of a semiconductor material, the circuit device is configured as a semiconductor circuit device.

In still another mode of the first mode, the first substrate may be made of an insulating material.

[0015] In still another aspect of the first aspect, the first substrate may be made of a semiconductor material. First
When the substrate is made of a semiconductor material, the circuit device is configured as a semiconductor circuit device.

In still another aspect of the first aspect, the semiconductor material forming the first substrate may be Si, and the semiconductor material forming the second substrate may be GaAs.

[0017] In still another aspect of the first aspect, the second element may include an active element. At this time, by further configuring the first element as a passive element,
The passive element and the active element may be formed on different substrates. By forming the passive element and the active element separately, it is possible to provide a circuit device in which the characteristics of each other are not deteriorated.

In still another aspect of the first aspect, one of the first element and the second element may include a field-effect transistor, and the other may include a bipolar transistor. By forming the field-effect transistor and the bipolar transistor on different substrates, it is possible to provide a circuit device in which both characteristics are not deteriorated.

[0019] In still another mode of the first mode, the first substrate may be made of a material having higher thermal conductivity than the second substrate. In this case, it is possible to provide a circuit device having an excellent heat radiation effect.

In still another mode of the first mode, the first element may have a dielectric film. By forming the first element including a dielectric film requiring heat treatment separately from the second element, a circuit device can be formed without performing heat treatment on the second element.

In still another mode of the first mode, the material forming the thin-film conductor wiring may include Al or Cu.

According to a second aspect of the present invention, there is provided a first element forming step of forming a first element on a first substrate, a second element forming step of forming a second element on a second substrate, The second
Fixing a second element to the first substrate;
Electrically connecting the first element and the second element by a thin-film conductor wiring. According to a second aspect of the present invention,
A circuit in which good characteristics of the first element and the second element are not deteriorated by fixing the second element to the first substrate on which the first element is formed after forming the first element and the second element separately. A device can be formed.

According to a third aspect of the present invention, there is provided a first element forming step of forming a first element on a first substrate;
A step of forming a thin-film conductor wiring having one end electrically connected to the first element on the substrate; a second element forming step of forming a second element on the second substrate; First
Fixing a second element to the first substrate so as to be connected to the other end of the thin film conductor wiring formed on the substrate. According to the third aspect of the present invention, after the first element and the second element are separately formed, the first element and the second element are fixed to the first substrate on which the first element is formed. It is possible to form a circuit device in which good characteristics of two elements are not deteriorated.

In one aspect of the second or third embodiment, the step of forming the first element includes the step of providing a recess for the second element in the first substrate, and the step of fixing the second element includes: The method may include a step of fitting the second element into the recess provided in the first substrate.

In another aspect of the second or third aspect, the step of forming the first element includes the step of preparing the first substrate made of a semiconductor material, and the step of forming the second element includes The method may include preparing the second substrate made of a semiconductor material different from the semiconductor material constituting the first substrate.

According to a fourth aspect of the present invention, there is provided a first element forming step of forming a first element on a first substrate, and a second substrate fixing step of fixing a second substrate to the first substrate. Forming a second element on the second substrate fixed to the first substrate, and electrically connecting the first element and the second element by a thin film conductor wiring; A method for manufacturing a circuit device, comprising: According to the fourth aspect of the present invention, the first element and the second element are formed by forming the first element on the first substrate and then forming the second element on the second substrate fixed to the first substrate. It is possible to form a circuit device in which good characteristics of the element are not deteriorated.

In one embodiment of the fourth mode, the step of forming the first element includes the step of providing a recess for the second element in the first substrate, and the step of fixing the second substrate includes the step of fixing the first substrate.
The method may include a step of fitting the second substrate into a concave portion provided in the substrate.

Note that the above summary of the present invention does not list all of the necessary features of the present invention, and sub-combinations of these features can also constitute the present invention.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the claims, and are described in the embodiments. Not all combinations of features are essential to the solution of the invention.

FIG. 1 is a sectional view of a circuit device 100 according to a first embodiment of the present invention. The circuit device 100 has a first
A circuit device formed on the substrate 10;
Is an insulating material such as alumina, or silicon (Si),
It is composed of a semiconductor material such as gallium arsenide (GaAs). A first element group 30 including at least one element and a second element group 1 including at least one element are provided on a first substrate 10.
2, a thin film conductor wiring 18 for electrically connecting the first element group 30 and the second element group 12 is provided.

The first element group 30 is formed directly on the substrate 10. On the other hand, the second element group 12 is not formed directly on the substrate 10. For example, the second element group 12 is formed on a second substrate different from the first substrate 10 by a process different from the process of forming the first element group 30, and then the first element group 30 is formed.
It is fixed to the substrate 10. The second element group 12 includes the first substrate 1
It may be formed on a second substrate fixed to zero. The second substrate is made of either an insulating material or a semiconductor material depending on the required circuit characteristics. The second element group 12 includes:
It may be fixed on the first substrate 10 by being attached thereto. In order to fix the second element group 12 to the first substrate 10, various methods such as soldering and an adhesion method using an adhesive can be used.

The elements included in the first element group 30 and the elements included in the second element group 12 are electrically connected by the thin film conductor wiring 18. The thin-film conductor wiring 18 can be formed of a low-resistance metal material by a known metal wiring technique (metallization technique). As a typical metal wiring technique, for example, a physical vapor deposition method (PVD method) such as a vacuum evaporation method or a sputter evaporation method is given. As the metal material, for example, a typical wiring material such as Al or Cu can be used. A metal material such as Al or Cu is deposited or deposited on the first substrate 10 by a PVD method or the like. Compared with a conventional connection method in which elements are bonded to each other with gold wires, the length and shape of the thin film conductor wiring 18 can be accurately formed, so that stable operation of the circuit can be realized. In particular, the thin film conductor wiring 18 is very suitable for the high-speed operation of the circuit device 100.

When the first substrate 10 is an insulating substrate such as an alumina substrate, the first element group 30 may include a passive element such as a resistance element or a capacitor element. On the other hand, the second
When the substrate is made of a semiconductor material such as a Si substrate or a GaAs substrate, the second element group 12 may include an active element such as a transistor. In one example of the present embodiment, the first substrate 10 is provided with a first element group 3 which is a passive element.
0, and then the second element group 12
May be fixed to form the circuit device 100. According to this embodiment, since the passive element and the active element are formed on separate substrates, it is possible to provide an excellent circuit device 100 without deteriorating the characteristics of the passive element and the active element.

In FIG. 1, a first element group 30 has a resistance element 14 and a capacitor element 20. The capacitor element 20 has a dielectric film 16 that is heated and aged in an initial state. When the second element group 12 includes an active element such as a field-effect transistor, the active element such as the transistor is not resistant to heat, and is fixed on the first substrate 10 after the heat treatment of the dielectric film 16 is completed. Preferably.

When both the first substrate 10 and the second substrate are semiconductor substrates, the first element group 30 and the second
One of the element groups 12 may include a field-effect transistor, and the other may include a bipolar transistor.
In one example of the present embodiment, the circuit device 100 is formed by forming the field-effect transistor and the bipolar transistor on separate substrates by independent processes, and thereafter, electrically connecting them. Is also good. Since the field effect transistor and the bipolar transistor have different element structures, if the field effect transistor and the bipolar transistor are formed at once by the conventional integrated circuit technology, there is a problem that the element characteristics are deteriorated. However, according to this embodiment, since the field effect transistor and the bipolar transistor are formed independently on separate substrates, it is possible to provide the circuit device 100 incorporating both without deteriorating the element characteristics of both. Becomes

When both the first substrate 10 and the second substrate are semiconductor substrates, the first substrate 10 may be formed of an elemental semiconductor such as Si, and the second substrate may be formed of a compound semiconductor such as GaAs. Good. Conversely, the first substrate 10 may be formed from a compound semiconductor, and the second substrate may be formed from an elemental semiconductor. Both the first substrate 10 and the second substrate may be formed of an element semiconductor, or both the first substrate 10 and the second substrate may be formed of a compound semiconductor.

The circuit device 100 includes a plurality of second element groups 12
May be provided. According to the required circuit characteristics, the second element group 1
2 can be formed on various types of substrates.
For example, each second element group 12 is composed of a GaAs substrate, an AlGaAs substrate,
It may be formed on a plurality of types of substrates such as an InP substrate. A plurality of second element groups 12 formed on a plurality of types of substrates
By fixing to the substrate 10, it is possible to provide the circuit device 100 having the unprecedented excellent characteristics utilizing the characteristics of the respective second element groups 12.

The first substrate 10 is preferably made of a material having high thermal conductivity. For example, the first substrate 10 may be made of sapphire or the like. The first substrate 10
It may be made of a material having higher thermal conductivity than the second substrate. A circuit device 1 that has an excellent heat dissipation effect and maintains stable operating characteristics by increasing the thermal conductivity of the first substrate 10.
00 can be provided.

FIG. 2 is a sectional view of a circuit device 100 according to a second embodiment of the present invention. The circuit device 100 has a first
A circuit device formed on a substrate 10. The first substrate 10 includes a first element group 30 including at least one element, a second element group 12 including at least one element, and a first element group 3
Thin film conductor wiring 1 for electrically connecting the first element group 0 to the second element group 12
8 are provided. In this example, the first element group 30
Has a resistor element 14 and a capacitor element 20 including a dielectric film 16. 1 have the same or similar functions as / to those in FIG. 1 and will not be described in detail.

In the second embodiment, the first substrate 10
Have a concave portion 22 for the second element group 12. The shape of the concave portion 22 is formed according to the shape of the second element group 12.
The recess 22 may be formed by etching during the formation of the first element group 30. The second element group 12 is fitted and fixed in the recess 22. According to this embodiment, the second
Since the element group 12 can be fixed with high accuracy, the thin film conductor wiring 18 can be formed with high accuracy, and the reliability of the circuit device 100 can be improved.

FIG. 3 is a sectional view of a circuit device 100 according to a third embodiment of the present invention. The circuit device 100 has a first
A semiconductor circuit device formed on a substrate, wherein a first element group including at least one element, a second element group including at least one element, and a first element group and a second element group are electrically connected to each other. And a thin film conductor wiring 18 which is electrically connected. In the third embodiment, the first substrate 10 is made of silicon (Si), and the second substrate is made of gallium arsenide (G).
aAs). In another example, the first substrate 10 and the second substrate may be made of different semiconductor materials. The second element group 12 is fitted and fixed in a concave portion 22 provided in the first substrate 10.

The first substrate 10 is doped with n-type, and an oxide film 32 is formed on the surface of the first substrate 10. A window is provided at a predetermined position of oxide film 32, and a resistance element 14 and a capacitor element 20 are formed by ion-implanting p-type impurities through the window. The resistance value of the resistance element 14 and the capacitance of the capacitor element 20 can be adjusted by the amount of the p-type impurity to be implanted.

On the other hand, the second element group 12 is a compound semiconductor element formed on a GaAs substrate. In FIG. 3, the second
Although one field effect transistor is shown as the element group 12, the second element group 12 may include another plurality of semiconductor elements. After the second element group 12 is fitted and fixed in the concave portion 22, the electrode 34 is formed. Then, the thin film conductor wiring 18 is formed so as to electrically connect the electrode 34 and the capacitor element 20. The thin-film conductor wiring 18 is preferably formed of a low-resistance material such as Al or Cu.

As shown in FIG. 3, the third embodiment of the present invention can realize a circuit device 100 in which semiconductor elements formed on a plurality of types of substrates are mixed, which has been impossible in the past. Semiconductor elements formed on a substrate such as Si or GaAs have advantages and disadvantages. Therefore, according to the third embodiment, it is possible to provide an excellent circuit device 100 that utilizes the advantages of each semiconductor element.

In this embodiment, as in the first and second embodiments, the elements included in the first element group 30 and the elements included in the second element group 12 are replaced by the thin-film conductor wiring 18. May be electrically connected. The thin-film conductor wiring 18 is formed of a low-resistance metal material by a known metal wiring technique (metallization technique). However, the third embodiment is characterized by providing a circuit device 100 in which semiconductor elements formed on a plurality of types of substrates are mixed, and the wiring is not necessarily formed by a semiconductor manufacturing process such as metal wiring technology. You don't need to be. Therefore, the wiring connecting the first element group 30 and the second element group 12 can be formed by gold wires using a conventional gold wire bonding technique.

FIG. 4A shows a modification of the concave portion 22 provided in the first substrate 10. In this modification, a hole 24 is provided at the bottom of the recess 22. A projection formed below the second element group 12 is inserted into the hole 24, and the second element group 12 can be positioned with high accuracy with respect to the first substrate 10.

FIG. 4B shows a cross section in a state where the second element group 12 is fitted in the concave portion 22 shown in FIG. 4A. The second element group 12 has a protrusion 36 at the lower part. The protrusion 36 is formed according to the shape of the hole 24, and is inserted into the hole 24. By inserting the protrusion 36 into the hole 24, the second element group 12 is moved to the first substrate 10.
Can be securely fixed.

FIG. 4C shows a cross section in a state where the second element group 12 having a plurality of projections 36 is fitted into the recess 22 having the plurality of holes 24. By inserting the plurality of protrusions 36 into the corresponding plurality of holes 24, the second element group 12 can be more securely fixed to the first substrate 10.

FIG. 5A is an embodiment showing an electrical connection between the second element group 12 and the thin film conductor wiring 18 when an electrode is provided below the second element group 12. In this embodiment, before the second element group 12 is fitted into the recess 22, the thin film conductor wiring 18 is formed in advance on the first substrate 10 in accordance with the position of the electrode formed in the second element group 12. Keep it. This thin-film conductor wiring 18 extends to the bottom of the recess 12. By fitting the second element group 12 into the concave portion 22, the thin-film conductor wiring 18 and the second element group 12 are electrically connected.
In order to electrically connect the thin film conductor wiring 18 and the second element group 12 reliably, the upper surface of the second element group 12 and the upper surface of the first substrate 10 around the second element group 12 are masked with an insulating material. The two-element group 12 may be pressed down so as not to float.

FIG. 5B is a modification showing the electrical connection between the second element group 12 and the thin-film conductor wiring 18 when an electrode is provided below the second element group 12. In this modification, the thin film conductor wiring 18 is formed in advance on the first substrate 10 in accordance with the positions of the electrodes formed in the second element group 12. Then, the thin film conductor wiring 18 and the second element group 12 are electrically connected by placing the second element group 12 on the first substrate 10.

FIG. 6 is a diagram for explaining an example of a circuit device manufacturing method for manufacturing the circuit device 100 according to the present invention. A specific process for manufacturing the circuit device 100 shown in FIG. 2 will be described with reference to FIG. This process can be applied to the manufacturing process of another circuit device 100 according to the present invention.

As shown in FIG. 6A, first, a first substrate 10 which is an alumina substrate is prepared. Then, the first element group 30 and the recess 22 are formed on the first substrate. In this example, the first element group 30 includes a resistance element and a capacitor element. The capacitor element includes a dielectric film, and the dielectric film is heated and aged. The recess 22 is provided in the second element group 1 to be fitted later.
2 is formed in accordance with the shape of FIG. In FIG. 6A,
Although only one recess 22 is shown, a plurality of recesses 22 corresponding to the number of second element groups to be incorporated in the first substrate 10 may be formed.

Then, as shown in FIG.
A second substrate 40, which is a semiconductor substrate, is prepared.
The second element group 12 is formed thereon. The second element group 12 is preferably formed by a predetermined semiconductor manufacturing process such as an epitaxial crystal growth method. The second substrate 40
A region other than the second element group 12 is removed by etching so that only the predetermined second element group 12 becomes a convex portion. The shape of the convex portion is formed according to the shape of the concave portion 22 provided on the first substrate 10. The plurality of second element groups 12 may be formed on the second substrate 40.

Then, as shown in FIG.
The protrusion (second element group 12) of the second substrate 40 is
0 in the recess 22. After the dielectric film of the first element group 30 is heated, the second element group 12 is fixed to the first substrate 10, so that the second element group 12 is formed without being affected by the heat treatment of the dielectric film. It is possible to be. First
The element group 30 and the second element group 12 can be formed independently without adversely affecting each other in the manufacturing process.

FIG. 6D shows a state where the second substrate 40 which does not constitute the second element group 12 is removed. Second substrate 40
Various methods for removing the unnecessary portion can be considered. For example, the unnecessary portion may be removed by polishing (polishing) the second substrate 40. Then, as a finish, the second element group 12 is subjected to chemical etching.
Can be formed flat. First substrate 1
By forming the surface of the second element group 12 flat with respect to the surface of the zero, the focusing in the photolithography step becomes easy when the thin film conductor wiring 18 is formed later. Further, since the first element group 30 and the second element group 12 can be formed on substantially the same plane, the length of the wiring connecting the first element group 30 and the second element group 12 can be reduced. And the stray capacitance of the wiring can be reduced. Further, unlike the conventional integrated circuit, it is not necessary to form an element on the element, so that the entire element thickness can be reduced and heat radiation is facilitated.

FIG. 6E shows a state in which a predetermined region of the second element group 12 has been removed by etching to form an electrode at a predetermined position. Then, as shown in FIG. 6F, the thin film conductor wiring 18 is formed, and the first element group 30 and the second element group 12 are electrically connected. Thin film conductor wiring 18
Is preferably formed by depositing and depositing a material containing Al or Cu on the substrate 10, but may be formed of another metal material. The thin film conductor wiring 18 is preferably formed using a known semiconductor process such as a lift-off method, plating, vacuum evaporation method, or sputter evaporation method. Through the above process, the circuit device 100 according to the present invention can be formed.

FIG. 7 is a diagram for explaining another example of the circuit device manufacturing method for manufacturing the circuit device 100 according to the present invention.

As shown in FIG. 7A, the first substrate 1
The first element group 30 and the concave portion 22 are formed on the first substrate 10. The recess 22 is formed according to the shape of the second element group 12 to be fitted later.
In FIG. 7A, only one concave portion 22 is shown, but a plurality of concave portions 22 corresponding to the number of the second element groups to be incorporated in the first substrate 10 may be formed.

Then, as shown in FIG. 7B,
The thin film conductor wiring 18 is formed on the first substrate 10. The thin film conductor wiring 18 is preferably formed by depositing and depositing a material containing Al or Cu on the substrate 10, but may be formed of another metal material. One end of the thin film conductor wiring 18
It is electrically connected to at least one of the elements in the first element group 30. In this example, one end of the thin film conductor wiring 18 is
Connected to the capacitor element 20. Thin film conductor wiring 18
Is formed to extend into the concave portion 22 corresponding to the position of the electrode of the second element group 12 to be inserted into the concave portion 22 later.

Then, as shown in FIG.
A second substrate 40, which is a semiconductor substrate, is prepared.
The second element group 12 is formed thereon. The second substrate 40 is formed such that only the predetermined second element group 12 becomes a convex portion.
Areas other than 2 are removed by etching. The shape of the convex portion is formed according to the shape of the concave portion 22 in which the thin film conductor wiring 18 is formed. The second element group 12 includes:
A plurality may be formed on the second substrate 40.

Then, as shown in FIG.
The protrusion (second element group 12) of the second substrate 40 is
0 and fitted into the recess 22. Second element group 12
Is electrically connected to one end of the thin-film conductor wiring 18. Then, the region of the second substrate 40 other than the second element group 12 is removed by polishing. The upper part of the second element group 12 may be covered with an insulating material and fixed so that the second element group 12 does not float. Through the above process, the circuit device 100 according to the present invention can be formed.

FIG. 8 is a diagram for explaining another example of a circuit device manufacturing method for manufacturing the circuit device 100 according to the present invention.

As shown in FIG. 8A, first, the first
A substrate 10 is prepared. Then, the first element group 30 and the recess 22 are formed on the first substrate. In this example,
The first element group 30 includes a resistance element and a capacitor element. The recess 22 is provided in the second substrate 40 to be fitted later.
It is formed according to the shape of.

Then, as shown in FIG.
A second substrate 40, which is a semiconductor substrate, is prepared. Second substrate 4
0 is processed by etching so that only a predetermined region becomes a convex portion according to the shape of the concave portion 22 provided in the first substrate 10. Then, as shown in FIG. 8C, the convex portion of the second substrate 40 is fitted into the concave portion 22 of the first substrate 10, and the second substrate 40 is fixed to the first substrate 10.

FIG. 8D shows a state in which unnecessary regions of the second substrate 40 have been removed so that the second substrate 40 is flat with respect to the surface of the first substrate 10. For example, unnecessary portions of the second substrate 40 are removed by polishing (polishing). Thereafter, by performing chemical etching as a finish, the surface of the second element group 12 can be formed flat.

Then, as shown in FIG.
A mask 44 is formed of a mask material in a region of the first substrate 10 other than a region where the second substrate 40 is exposed. Then, as shown in FIG. 8F, on the second substrate 40,
The second element group 12 is formed by using a semiconductor manufacturing process or the like. After the formation of the second element group 12, the mask 44 is removed. Then, as shown in FIG. 8 (g), the thin film conductor wiring 18 is formed by using a metal wiring technique, and the first element group 30 and the second element group 12 are electrically connected. Through the above process, the circuit device 100 according to the present invention can be formed.

As apparent from the above description, according to the present invention, it is possible to provide a circuit device having excellent characteristics and a method of manufacturing the same. As described above, the present invention has been described using the embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It is apparent to those skilled in the art that various changes or improvements can be made to the above embodiment. It is apparent from the description of the appended claims that embodiments with such modifications or improvements are also included in the technical scope of the present invention.

[0068]

According to the present invention, a circuit device combining elements formed on a plurality of substrates can be provided.

[Brief description of the drawings]

FIG. 1 is a circuit device 100 according to a first embodiment of the present invention.
FIG.

FIG. 2 is a circuit device 100 according to a second embodiment of the present invention.
FIG.

FIG. 3 is a circuit device 100 according to a third embodiment of the present invention;
FIG.

FIG. 4A shows a concave portion 22 provided on a first substrate 10;
(B) shows the concave portion 22 shown in (a).
2 shows a cross section in a state where the second element group 12 is fitted.
(C) shows a cross section in a state where the second element group 12 having a plurality of projections 36 is fitted into the recess 22 having the plurality of holes 24.

FIG. 5A is an embodiment relating to the electrical connection between the second element group 12 and the thin-film conductor wiring 18 when an electrode is provided below the second element group 12, and FIG. , When an electrode is provided below the second element group 12,
This is a modification example relating to electrical connection between the thin film conductor wiring 18 and the thin film conductor wiring 18.

FIG. 6 is a diagram for explaining an example of a circuit device manufacturing method for manufacturing the circuit device 100 according to the present invention.

FIG. 7 is a diagram for explaining another example of the circuit device manufacturing method for manufacturing the circuit device 100 according to the present invention.

FIG. 8 is a diagram for explaining another example of the circuit device manufacturing method for manufacturing the circuit device 100 according to the present invention.

[Explanation of symbols]

10 ... first substrate, 12 ... second element group, 14 ...
・ Resistor element, 16 ・ ・ ・ Dielectric film, 18 ・ ・ ・ Thin film conductor wiring, 20 ・ ・ ・ Capacitor element, 22 ・ ・ ・ Concave part, 2
4 ... Hole, 30 ... First element group, 32 ... Oxide film, 34 ... Electrode, 36 ... Protrusion, 40 ... Second substrate, 44 ... Mask

Claims (18)

[Claims] A first element on which a first element is formed; a second element formed on a second substrate and fixed to the first substrate; and electrically connecting the first element and the second element. A circuit device comprising: a thin film conductor wiring to be connected. 2. The circuit device according to claim 1, wherein the second element is attached and fixed to the first substrate. 3. The circuit device according to claim 1, wherein the second element is fitted and fixed in a recess provided in the first substrate. 4. The circuit device according to claim 1, wherein said second substrate is made of a semiconductor material. 5. The circuit device according to claim 4, wherein the first substrate is made of an insulating material. 6. The circuit device according to claim 4, wherein said first substrate is made of a semiconductor material. 7. The semiconductor material constituting the first substrate is Si, and the semiconductor material constituting the second substrate is Si.
The circuit device according to claim 6, wherein the circuit device is GaAs. 8. The circuit device according to claim 1, wherein the second element includes an active element. 9. The semiconductor device according to claim 1, wherein one of the first element and the second element includes a field-effect transistor, and the other includes a bipolar transistor.
8. The circuit device according to any one of claims 1 to 7. 10. The circuit device according to claim 1, wherein the first substrate is made of a material having higher thermal conductivity than the second substrate. 11. The circuit device according to claim 1, wherein the first element has a dielectric film. 12. A material for forming the thin film conductor wiring,
The circuit device according to claim 1, wherein the circuit device contains Al or Cu. 13. A first substrate for forming a first element on a first substrate.
An element forming step; a second element forming step of forming a second element on the second substrate; a second element fixing step of fixing the second element to the first substrate; Electrically connecting the two elements by a thin-film conductor wiring. 14. A first substrate for forming a first element on a first substrate.
An element forming step, a step of forming a thin film conductor wiring having one end electrically connected to the first element on the first substrate, and a second element forming step of forming a second element on the second substrate. ,
A second element fixing step of fixing the second element to the first substrate so that the second element is connected to the other end of the thin film conductor wiring formed on the first substrate. Production method. 15. The step of forming the first element includes the step of providing a second element concave portion in the first substrate, and the step of fixing the second element includes forming the second element concave portion in the concave portion provided in the first substrate. 15. The method according to claim 13, further comprising the step of fitting the second element. 16. The step of forming the first element includes the step of preparing the first substrate made of a semiconductor material, and the step of forming the second element includes the step of forming the first substrate and the semiconductor material forming the first substrate. Is a second semiconductor made of a different semiconductor material.
2. The method according to claim 1, further comprising the step of providing a substrate.
16. The method for manufacturing a circuit device according to any one of items 3 to 15. 17. A first substrate for forming a first element on a first substrate.
An element forming step, a second substrate fixing step of fixing a second substrate to the first substrate, and a second element forming step of forming a second element on the second substrate fixed to the first substrate. Electrically connecting the first element and the second element by a thin film conductor wiring. 18. The method according to claim 18, wherein the step of forming the first element includes the step of providing a second element concave portion in the first substrate, and the step of fixing the second substrate includes the steps of: The method of claim 17, further comprising fitting the second substrate.