JP2001007565A - Semiconductor relay device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a semiconductor relay to be easily used even if it is used in place of a mechanical relay by a method wherein a connection terminal is so formed as to be connected to a lead terminal by welding. SOLUTION: This semiconductor relay device is equipped with a built-in semiconductor relay 2 which is used in place of a mechanical relay such as an electromagnetic relay or the like and lead terminals 10, connection terminals 11 and others besides the semiconductor relay 2. The lead terminals 10 are provide so as to operate the semiconductor relay 2 and fixed to a base plate penetrating through it. The connection terminals 11 are provided so as to connect a board 1 where the semiconductor relay 2 is provided on the lead terminals 10 because the semiconductor relay 2 is provided on the board 1 in place of a mechanical relay. In more detail, the connection terminals 11 which are previously welded to the lead terminals 10 are soldered to the board 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor relay device having a built-in semiconductor relay.

[0002]

2. Description of the Related Art Conventionally, as this type of semiconductor relay device, there is one shown in FIGS. This one is
Built-in semiconductor relay A used as a substitute for so-called mechanical relays such as electromagnetic relays.In addition to semiconductor relay A, it has board B, base C, case D, lead terminal E, and connection terminal F. .

[0003] The semiconductor relay A is composed of packages A ₁ and the relay terminal A _2. Package A ₁ accommodates an output circuit A ₅ the input signal and outputs an output signal in response to an input signal input to the input circuit A ₄ and the input circuit A ₄ includes a light emitting diode A ₃ being energized. Relay terminal A ₂ is, package A ₁
Is derived from The semiconductor relay A is provided on one side of the substrate B.

The base C is made of resin, and has a substrate B mounted thereon. Case D is made of resin like Base C, is attached to Base C, and is a semiconductor relay together with Base C.
A is accommodated, and there is a gap between the semiconductor relay A and A.

The lead terminal E is provided for operating the semiconductor relay A, and is fixed through the base C. The connection terminal F has a semiconductor relay A, which is used as a substitute for the mechanical relay, provided on the board B.
It is provided so as to connect the board B on which the semiconductor relay A is provided and the lead terminal E. For details, refer to
Is first soldered to one of the substrate A or the lead terminal E and then soldered to the other.

[0006]

In the above-described conventional semiconductor relay device, the connection terminal F is first soldered to one of the substrate A or the lead terminal E and then soldered to the other. Therefore, when heating to connect the other, the solder attached for one connection melts, making it difficult to perform solder connection, and it is difficult to use the semiconductor relay A as a substitute for a mechanical relay. There was a problem.

[0007] Unlike the mechanical relay, the semiconductor relay A generates heat up to about 60 to 70 ° C.
If another component is provided above, the other component is heated, and as a result, there is a problem that it is difficult to use the semiconductor relay A as a substitute for a mechanical relay.

Further, the operating voltage is about 50 to 60 of the rated voltage.
% And a low-voltage less than impressed voltage is compared to a mechanical relay that does not work is applied, the semiconductor relay A is about 10 input signal current applied to the light emitting diode A ₃ of the input circuit A ₄ is the rated current Since the output signal is output even at ~ 20%,
When applied to the input circuit A ₄ even at a low voltage that does not operate if the mechanical relay, and is energized input signal current to the light emitting diode A ₃ of the input circuit A ₄ I outputs an output signal, there is a risk of malfunction However, there is a problem that the semiconductor relay A is difficult to use as a substitute for the mechanical relay.

The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor relay device which is not difficult to use even when a semiconductor relay is used as a substitute for a mechanical relay. is there.

[0010]

According to a first aspect of the present invention, there is provided a semiconductor relay, a board provided with the semiconductor relay, a lead terminal, and a lead connected to the board by soldering. A connection terminal connected to the terminal;
In the semiconductor relay device provided with, the connection terminal,
It is configured to be connected to the lead terminal by welding.

According to a second aspect of the present invention, there is provided a semiconductor relay,
In a semiconductor relay device including a substrate provided with a semiconductor relay, a lead terminal, and a connection terminal connected to the lead terminal while being soldered to the substrate, the connection terminal is formed integrally in advance. It is configured to be connected to lead terminals.

According to a third aspect of the present invention, there is provided a semiconductor relay,
A substrate provided with a semiconductor relay, a base on which the substrate is mounted, and a case attached to the base and accommodating the semiconductor relay together with the base, the semiconductor relay includes an input circuit and an input signal input to the input circuit. In a semiconductor relay device including a package accommodating an output circuit that outputs an output signal in accordance with and a relay terminal derived from the package, the package has a configuration in which a contact surface that contacts an inner surface of the case is provided. ing.

According to a fourth aspect of the present invention, in the third aspect of the present invention, the substrate is provided with the semiconductor relays on both surfaces thereof, and the contact surfaces of the semiconductor relays are mutually opposed among the inner surfaces. It is configured to be in contact with opposing parts.

According to a fifth aspect of the present invention, in the first aspect of the present invention, a filling member is filled between the semiconductor relay, the base, and the case. .

According to a sixth aspect of the present invention, in the fifth aspect of the invention, the filling member is made of an epoxy resin.

According to a seventh aspect of the present invention, in the third aspect of the present invention, the case and the base are both made of aluminum, nickel silver or copper.

According to an eighth aspect of the present invention, in the seventh aspect of the present invention, the base is connected to a ground terminal.

According to a ninth aspect of the present invention, there is provided a semiconductor relay having an input circuit including a light emitting diode to which an input signal is supplied, an output circuit for outputting an output signal in accordance with an input signal input to the input circuit, and a semiconductor. And a shunt resistor connected in parallel to the light emitting diode of the input circuit of the relay.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. This semiconductor relay device has a built-in semiconductor relay 2 used as a substitute for a so-called mechanical relay such as an electromagnetic relay. In addition to the semiconductor relay 2, a substrate 1, a shunt resistor 3, and a conversion resistor
4, a protection diode 5, a base 6, a ground terminal 7, a case 8, a filling member 9, a lead terminal 10, and a connection terminal 11.

The substrate 1 comprises a semiconductor relay 2 and a shunt resistor 3
, A conversion resistor 4 and a protection diode 5 are provided. Semiconductor relay 2 consists of package 21 and relay terminals
22 and is provided on one side of the substrate 1. The package 21 contains an input circuit 21b including a light emitting diode 21a to which an input signal is supplied, and an output circuit 21c for outputting an output signal in accordance with an input signal input to the input circuit 21b. The relay terminal 22 is derived from the package 21.

The shunt resistor 3 is connected in parallel to the light emitting diode 21a of the input circuit 21b. The conversion resistor 4 is connected to an input signal conduction path so as to change a voltage value to a current value. Note that these conversion resistors 4
For the design resistance value R ₂ of the resistance value R ₁ and the shunt resistor 3 will be described later in detail. The protection diode 5 is connected in parallel to the light emitting diode 21a by connecting its anode to the cathode of the light emitting diode 21a of the input circuit 21b and connecting the cathode to the anode of the light emitting diode 21a of the input circuit 21b, respectively. Light emitting diode 21a
Is prevented from being applied with a reverse voltage.

The base 6 is made of nickel silver and has the substrate 1 mounted thereon. The base 6 may be made of aluminum or copper. The base 6 is connected to a ground terminal 7. Case 8 is made of nickel silver like base 6,
The semiconductor relay 2 is attached to the base 6 and accommodates the semiconductor relay 2 together with the base 6, and has a gap between itself and the semiconductor relay 2. This case 8 may be made of aluminum or copper.
A space between the base 6 and the case 8 and the semiconductor relay 2 is filled with a filling member 9 made of epoxy resin.

The lead terminal 10 is provided to operate the semiconductor relay 2, has a columnar shape, and is fixed to the base 6. The connection terminal 11 is provided so as to connect the lead terminal 10 with the substrate 1 on which the semiconductor relay 2 is provided, since the semiconductor relay 2 used as a substitute for the mechanical relay is provided on the substrate 1. Specifically, the connection terminal 11 is soldered to the substrate 1 in a state where the connection terminal 11 is connected to the lead terminal 10 in advance by welding.

Next, the design resistance value R ₂ of the resistance value R ₁ and the shunt resistor 3 of the converting resistor 4, by way of example,
This will be specifically described. As shown in FIG. 5, when each element is connected, for example, a rated voltage of 24 V is applied between the input terminals and the recommended operating current of the light emitting diode 21a is 10
mA and the voltage drop by the light emitting diode 21a is 1.2 V, the current value flowing through the conversion resistor 4 is i ₁ , the current value flowing through the shunting resistor 3 is i ₂ , and the current value flowing through the light emitting diode 21a Is i ₃ , the following (1)
Equations (2) and (3) hold.

R ₂ × i ₂ = 1.2 (1) i ₁ = i ₂ + i ₃ = i ₂ +0.01 (2) R ₁ × i ₁ = 24−1.2 = 22.8 (3) If the sensing voltage value of the semiconductor relay 2 is 12 V and the current value of the light emitting diode 21a in which the semiconductor relay 2 operates is 1 mA, the following equation (4) is established.

(1.2 / R_Two) + 0.001 = (12−1.2) / R₁ (4) Solving the simultaneous equations consisting of these equations (1) (2) (3) (4) gives
R₁= 1333Ω, R _Two= 169Ω.

In such a semiconductor relay device, since the connection terminal 11 connected to the lead terminal 10 by welding without soldering has no solder, the connection terminal 11 is heated by the solder connection with the substrate 1. Even if it is done, the solder will not melt, so unlike the conventional example, the solder connection should not be difficult, and even if the semiconductor relay 2 is used as a substitute for the mechanical relay, the solder connection is difficult. Therefore, it is not difficult to use the semiconductor relay 2 as a substitute for the mechanical relay.

Further, the inside of the base 6 and the case 8 is filled with a filling member 9 having relatively high thermal conductivity, such as epoxy resin, so that heat generated from the semiconductor is removed.
And case 8 is easily transferred.

Further, since the case 8 and the base 6 are both made of a metallic material having a high thermal conductivity, such as nickel silver, heat is more easily dissipated.

Further, since the case 8 and the base 6 are both made of a nickel-white metal material, the inside of the case 8 and the base 6 can be easily shielded by connecting the ground terminal 7 to the base 6. .

Further, even when a voltage is applied to the input circuit 21b, the input signal current accompanying the voltage is applied not only to the light emitting diode 21a but also to the shunt resistor 3 connected in parallel to the light emitting diode 21a. Therefore, when only a low voltage is applied, the input signal current supplied to the light emitting diode 21a becomes small, the output signal is not output, no malfunction occurs, and the semiconductor relay 2 is used as a substitute for the mechanical relay. Even if it is used, malfunctioning when a low voltage is applied does not make it difficult to use the semiconductor relay 2 as a substitute for a mechanical relay.

[0032] This will be based on the example given when describing the time of designing the resistance value R ₂ of the resistance value R ₁ and the shunt resistor 3 of the converting resistor 4 will be specifically described. As described above, when designing the resistance value R ₂ of the resistance value R ₁ and the shunt resistor 3 of the converting resistor 4, is applied between the input terminals impressed voltage value 12V, 1 mA to the light emitting diode 21a of the semiconductor relay 2 When a rated voltage of 24 V is applied between the input terminals, a current of 10 mA flows through the light emitting diode 21a of the semiconductor relay 2. In addition,
Even if a voltage of 12 V or less is applied between the input terminals, the semiconductor relay 2 will not be turned ON because only a current of 1 mA or less flows through the light emitting diode 21a of the semiconductor relay 2.

On the other hand, as shown in FIG. 6, when the shunt resistor 3 is not provided, when the rated voltage of 24 V is applied between the input terminals, the recommended operating current of the light emitting diode 21a is 10 mA. and flowing a current i of the resistance value of the converting resistor 4 When R _1, (5) the following equation is established.

24 = R ₁ × 0.01 + 1.2 (5) By solving the equation consisting of the equation (5), R ₁ = 2280Ω
Becomes Therefore, when the conversion resistor 4 having this resistance value is connected, the light-emitting diode that operates the semiconductor relay 2
21a Assuming that the current value is 1 mA, the sensing voltage Vs is expressed by the equation (6).

The moving voltage Vs = 2280 × 0.001 + 1.2 (6) The moving voltage Vs = 3.48 V is calculated from the equation (6).

On the other hand, in the mechanical relay, the operating voltage is 12 V, which is about 50% of the rated voltage. Therefore, even if a voltage that does not operate the mechanical relay is applied, the semiconductor relay 2 shown in FIG. In this embodiment, malfunction does not occur, and the semiconductor relay 2 does not become difficult to use as a substitute for a mechanical relay.

Next, a second embodiment of the present invention will be described below with reference to FIGS. Parts having substantially the same functions as those of the first embodiment are denoted by the same reference numerals,
Only different points from the first embodiment will be described. In the first embodiment, the connection terminal 11 is connected to the lead terminal 10 by welding, and the semiconductor relay 2 has a gap between the semiconductor relay 2 and the case 8. The package 11 is connected to the lead terminal 10 by being integrally formed in advance, and the package 21 has a configuration in which a contact surface 21d that contacts the inner surface of the case 8 is provided.

More specifically, the semiconductor relays 2 are provided on both surfaces of the substrate 1, and the contact surfaces 21 d of the semiconductor relays 2 are in contact with mutually opposing portions on the inner surface of the case 8.

In such a semiconductor relay device, the first
Similarly to the embodiment, by connecting the ground terminal 7 to the base 6, the inside of the case 8 and the inside of the base 6 can be easily shielded, and the input signal current accompanying the voltage application can be reduced only by the light emitting diode 21a. And the current also flows through the shunt resistor 3 connected in parallel to the light emitting diode 21a, so that when only a low voltage is applied, the input signal current supplied to the light emitting diode 21a decreases,
No malfunction is caused, and the effect that the semiconductor relay 2 is not difficult to use as a substitute for the mechanical relay can be obtained.

Also, since the connection terminal 11 connected to the lead terminal 10 by being formed in advance in advance has no solder attached thereto, the solder is melted even when heated to be connected to the substrate 1 by soldering. Therefore, unlike the conventional example, the solder connection should not be difficult, and even if the semiconductor relay 2 is used as a substitute for the mechanical relay, the solder connection is difficult. 2 is not difficult to use as a substitute for a mechanical relay.

Moreover, since the connection terminals 11 are formed integrally in advance, there is no need to form the connection terminals 11 and the lead terminals 10 separately and then connect them by welding or the like, which facilitates manufacture.

The heat generated from the package 21, which is the main heat source of the semiconductor relay 2, is transferred directly to the inner surface of the case 8 through the contact surface 21d and is radiated from the case 8, so that the heat is easily radiated. Even if the semiconductor relay 2 is used as a substitute for a mechanical relay, the effect that the semiconductor relay 2 does not become difficult to use as a substitute for the mechanical relay can be obtained because the semiconductor relay 2 generates heat more than the mechanical relay.

Further, since the contact surfaces 21d of the semiconductor relays 2 provided on both sides of the substrate 1 contact the opposing portions of the inner surface of the case 8, respectively, the semiconductor relay 2 is accommodated. When the case 8 is attached to the base 6, the case 8 contacts the contact surface 21 of the semiconductor relay 2.
Since it is guided along d, the work of attaching the case 8 to the base 6 becomes easier.

Further, by filling the inside of the base 6 and the case 8 with the filling member 9, the heat generated from the semiconductor is easily transmitted to the base 6 and the case 8.
Since the heat is radiated from the case 8 and the semiconductor relay 2, even if the semiconductor relay 2 is used as a substitute for the mechanical relay, it generates more heat than the mechanical relay. be able to.

Further, since the filling member 9 having relatively high thermal conductivity such as epoxy resin is filled, the semiconductor relay
Since the heat generated from 2 becomes more easily transferred to the base 6 and the case 8 and the heat radiation effect is further increased, the effect that the semiconductor relay 2 does not become difficult to use as a substitute for the mechanical relay can be further exerted.

Further, since both the case 8 and the base 6 are made of a metallic material such as nickel silver which has a high thermal conductivity, the heat radiation effect is further enhanced, and the semiconductor relay 2 is not difficult to use as a substitute for a mechanical relay. Can be played further.

[0047]

According to the first aspect of the present invention, since the connection terminal connected to the lead terminal by welding has no solder attached thereto, the solder is melted even when heated to be connected to the substrate by soldering. Since it is not, unlike the conventional example,
Solder connection should not be difficult, and even if a semiconductor relay is used as a substitute for a mechanical relay, it is not difficult to use a semiconductor relay as a substitute for a mechanical relay because of the difficulty in solder connection.

According to the second aspect of the present invention, since the connection terminals connected to the lead terminals by being formed in advance in advance are not soldered, even if they are heated to be connected to the substrate by soldering, Since the solder does not melt, unlike the conventional example, solder connection should not be difficult, and even if a semiconductor relay is used as a substitute for a mechanical relay, solder connection is difficult, Semiconductor relays are not difficult to use as alternatives to mechanical relays. In addition, since the connection terminal is formed integrally in advance, it is not necessary to form the connection terminal and the lead terminal separately and then connect them by welding or the like, which facilitates the manufacture.

According to the third aspect of the present invention, the heat generated from the package, which is the main heat source of the semiconductor relay, is transmitted directly to the inner surface of the case through the contact surface and is radiated from the case, so that the ambient temperature is reduced. If it is high, it will not be unusable, and if other parts are provided on the board, other parts will not be heated,
Even if a semiconductor relay is used as a substitute for a mechanical relay,
The fact that it generates more heat than a mechanical relay does not make it difficult to use a semiconductor relay as a substitute for a mechanical relay.

According to a fourth aspect of the present invention, in addition to the effect of the third aspect of the present invention, the contact surfaces of the semiconductor relays provided on both surfaces of the substrate contact the opposing portions of the inner surface of the case. Therefore, when attaching the semiconductor relay to the base to accommodate the semiconductor relay,
Since the case is guided along the contact surface of the semiconductor relay, the work of attaching the case to the base becomes easier.

According to the fifth aspect of the present invention, since the filling member fills the inside of the base and the case, heat generated from the semiconductor is easily transmitted to the base and the base, and the heat radiation effect is further enhanced. In addition, the effect of the invention according to claim 3 can be further enhanced because the semiconductor relay is not difficult to use as a substitute for the mechanical relay.

According to the sixth aspect of the present invention, since a filling member such as an epoxy resin having a relatively high thermal conductivity is filled, the heat generated from the semiconductor is more easily transmitted to the base and the base, and the heat radiation effect is improved. Since the semiconductor relay is further increased, the effect of the invention described in claim 3 that the semiconductor relay is not difficult to use as a substitute for the mechanical relay can be further exhibited.

According to the seventh aspect of the present invention, since both the case and the base are made of a metallic material having high thermal conductivity such as nickel silver or copper, the heat radiation effect is further enhanced, and it is difficult to use the semiconductor relay as a substitute for the mechanical relay. Thus, the effect of the invention described in claim 3 can be further achieved.

According to an eighth aspect of the present invention, in addition to the effect of the seventh aspect, since the case and the base are both made of a metallic material such as nickel silver or copper, by connecting the ground terminal to the base, The inside of the case and the base can be easily shielded.

According to the ninth aspect of the present invention, even if a voltage is applied to the input circuit, the input signal current accompanying the voltage application is not only for the light emitting diode but also for the shunt current connected in parallel to the light emitting diode. When only a low voltage is applied, the input signal current supplied to the light emitting diode becomes small, so that no output signal is output and malfunction does not occur. Even when used, the fact that a malfunction occurs when a low voltage is applied does not make it difficult to use a semiconductor relay as a substitute for a mechanical relay.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a connection state of a connection terminal, a substrate, and a lead terminal according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing a connection state between a connection terminal and a lead terminal of the above.

FIG. 3 is a front sectional view of the same.

FIG. 4 is a side sectional view of the same.

FIG. 5 is a circuit diagram of the same.

FIG. 6 is a circuit diagram of an input circuit when a shunt resistor is not connected.

FIG. 7 is a side sectional view of a second embodiment of the present invention.

FIG. 8 is a perspective view of the lead terminal of the above.

FIG. 9 is a perspective view showing a connection state between a connection terminal, a substrate, and a lead terminal of a conventional example.

FIG. 10 is a front sectional view of the same.

FIG. 11 is a side sectional view of the same.

FIG. 12 is a circuit diagram of the same.

[Explanation of symbols]

 1 Board 2 Semiconductor relay 21 Package 21a Light emitting diode 21b Input circuit 21c Output circuit 21d Contact surface 22 Relay terminal 3 Shunt resistor 6 Base 7 Ground terminal 8 Case 9 Filling member 10 Lead terminal 11 Connection terminal

Claims (9)

[Claims] 1. A semiconductor relay device comprising: a semiconductor relay; a substrate on which the semiconductor relay is provided; a lead terminal; and a connection terminal soldered to the substrate and connected to the lead terminal. A semiconductor relay device connected to the lead terminal by welding. 2. A semiconductor relay device comprising: a semiconductor relay; a substrate provided with the semiconductor relay; a lead terminal; and a connection terminal connected to the lead terminal while being soldered to the substrate. A semiconductor relay device which is connected to a lead terminal by being formed integrally in advance. 3. A semiconductor relay, comprising: a substrate provided with the semiconductor relay; a base on which the substrate is mounted; and a case attached to the base and accommodating the semiconductor relay together with the base;
The semiconductor relay is a semiconductor relay device including a package that houses an input circuit and an output circuit that outputs an output signal in accordance with an input signal input to the input circuit, and a relay terminal that is derived from the package. And a contact surface for contacting an inner surface of the case. 4. The semiconductor device according to claim 1, wherein the semiconductor relays are provided on both surfaces of the substrate, and contact surfaces of the semiconductor relays are in contact with mutually opposing portions of the inner surface. 4. The semiconductor relay device according to 3. 5. The semiconductor relay device according to claim 3, wherein a filling member is filled between the semiconductor relay and the base and the case. 6. The semiconductor relay device according to claim 5, wherein the filling member is an epoxy resin. 7. The semiconductor relay device according to claim 3, wherein each of the case and the base is made of aluminum, nickel silver, or copper. 8. The semiconductor relay device according to claim 7, wherein a ground terminal is connected to the base. 9. A semiconductor relay having an input circuit including a light emitting diode to which an input signal is supplied, an output circuit for outputting an output signal in accordance with the input signal input to the input circuit, and light emission of an input circuit of the semiconductor relay. A semiconductor relay device comprising: a shunt resistor connected in parallel to a diode.