JP2001007391A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP2001007391A JP2001007391A JP17693299A JP17693299A JP2001007391A JP 2001007391 A JP2001007391 A JP 2001007391A JP 17693299 A JP17693299 A JP 17693299A JP 17693299 A JP17693299 A JP 17693299A JP 2001007391 A JP2001007391 A JP 2001007391A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- adhesive layer
- silver
- semiconductor light
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体発光装置に関
し、詳細には発光効率が向上された半導体発光装置に関
する。[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device with improved luminous efficiency.
【０００２】[0002]
【従来の技術】近年、半導体発光素子として窒化ガリウ
ム系半導体を用いた半導体発光装置（発光ダイオード）
が注目を浴びている。図１は従来のこの種の半導体発光
装置１を示し、図２はこの発光装置１に使用されている
窒化ガリウム系半導体発光素子２を示す。半導体発光装
置１は、一対のリード端子３、４と、この一方のリード
端子３に形成されたカップ状電極５に固着された半導体
発光素子２と、この発光素子２の電極とリード端子３、
４との間を電気的に接続する接続導体（リード細線）
６、７と、発光素子２及びリード端子３、４の一端側を
被覆する光透過性樹脂封止体８とから構成されている。
発光素子２は、サファイヤ等から成る絶縁性基板９と、
この上面に順次形成された窒化ガリウム系半導体から成
る第１の導電形（例えば、Ｎ形）の第１の半導体領域１
０及び第２の導電形（例えば、Ｐ形）の第２の半導体領
域１１と、第１の半導体領域１０の上面に電気的に接続
された第１の電極（例えば、カソード電極）１２と、第
２の半導体領域１１の上面に電気的に接続された第２の
電極（例えば、アノード電極）１３とを備えている。半
導体素子２の絶縁性基板９はカップ状電極５の底面に例
えばエポキシ系樹脂から成る接着剤層１４を介して固着
されており、第１の電極１２と第２の電極１３とがそれ
ぞれ一方のリード端子３と他方のリード端子４に接続導
体６、７を介して電気的に接続されている。一対のリー
ド端子３、４を通じて一対の電極１２、１３間に所定の
電圧を印加すると、発光素子２の一対の電極１２、１３
間に電流が流れ、キャリヤの再結合に基づく発光が生じ
る。2. Description of the Related Art In recent years, a semiconductor light emitting device (light emitting diode) using a gallium nitride based semiconductor as a semiconductor light emitting element.
Is getting attention. FIG. 1 shows a conventional semiconductor light emitting device 1 of this type, and FIG. 2 shows a gallium nitride-based semiconductor light emitting element 2 used in the light emitting device 1. The semiconductor light emitting device 1 includes a pair of lead terminals 3 and 4, a semiconductor light emitting element 2 fixed to a cup-shaped electrode 5 formed on one of the lead terminals 3, and an electrode of the light emitting element 2 and the lead terminal 3.
Connection conductor (fine lead wire) that electrically connects between 4
6, 7 and a light-transmitting resin sealing body 8 covering one end of the light emitting element 2 and the lead terminals 3 and 4.
The light emitting element 2 includes an insulating substrate 9 made of sapphire or the like;
A first semiconductor region 1 of a first conductivity type (for example, N-type) made of a gallium nitride-based semiconductor sequentially formed on this upper surface
A second semiconductor region 11 of zero and second conductivity type (for example, P-type), a first electrode (for example, cathode electrode) 12 electrically connected to the upper surface of the first semiconductor region 10, A second electrode (for example, an anode electrode) 13 electrically connected to the upper surface of the second semiconductor region 11 is provided. The insulating substrate 9 of the semiconductor element 2 is fixed to the bottom surface of the cup-shaped electrode 5 via an adhesive layer 14 made of, for example, an epoxy resin, and the first electrode 12 and the second electrode 13 are each one of them. The lead terminal 3 and the other lead terminal 4 are electrically connected via connection conductors 6 and 7. When a predetermined voltage is applied between the pair of electrodes 12, 13 through the pair of lead terminals 3, 4, the pair of electrodes 12, 13
An electric current flows between them, and light emission based on the recombination of carriers occurs.
【０００３】[0003]
【発明が解決しようとする課題】ところで、発光素子２
から放出される光の一部は、発光素子２を固着する接着
剤層１４にあたって反射して装置外部に導出される。従
って、この接着剤層１４の反射率を向上することによっ
て、半導体発光装置の発光効率の向上を図ることが可能
になる。特に、発光層の下側に形成された基板９が光透
過性を有し、素子２の下面から相対的に多くの光が導出
されるタイプの半導体発光装置では、接着剤層１４の反
射効率を向上することが望ましい。By the way, the light emitting element 2
A part of the light emitted from the device is reflected on the adhesive layer 14 to which the light emitting element 2 is fixed, and is led out of the device. Therefore, by improving the reflectance of the adhesive layer 14, the luminous efficiency of the semiconductor light emitting device can be improved. In particular, in a semiconductor light emitting device of a type in which the substrate 9 formed below the light emitting layer has light transmissivity and a relatively large amount of light is led out from the lower surface of the element 2, the reflection efficiency of the adhesive layer 14 It is desirable to improve.
【０００４】そこで、本発明の目的は、発光効率を向上
させることができる半導体発光装置を提供することにあ
る。[0004] Therefore, an object of the present invention is to provide a semiconductor light emitting device capable of improving luminous efficiency.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成するための本発明は、半導体発光素子と、こ
の半導体発光素子の支持体と、前記半導体発光素子を前
記支持体に固着するための接着剤層とを備えた半導体発
光装置において、前記接着剤層に光反射層を有する板状
薄片が混入されていることを特徴とする半導体発光装置
に係わるものである。SUMMARY OF THE INVENTION In order to solve the above problems and achieve the above object, the present invention provides a semiconductor light emitting device, a support for the semiconductor light emitting device, and the semiconductor light emitting device fixed to the support. The present invention relates to a semiconductor light emitting device provided with an adhesive layer for performing the above operation, wherein a plate-like flake having a light reflection layer is mixed in the adhesive layer.
【０００６】なお、請求項２に示すように板状薄片を銀
片即ちフレーク状銀片にすることが望ましい。It is desirable that the plate-like flakes be silver flakes, ie, flake-like silver flakes.
【０００７】[0007]
【発明の効果】各請求項の発明によれば、光反射性の板
状薄片が接着剤層に混入されているので、接着剤層の反
射性が高くなり、半導体発光装置の効率が高くなる。According to the invention of each claim, since the light-reflective plate-like flakes are mixed in the adhesive layer, the reflectivity of the adhesive layer increases, and the efficiency of the semiconductor light emitting device increases. .
【０００８】[0008]
【実施形態及び実施例】次に、図３〜図５を参照して本
発明の実施例の半導体発光装置を説明する。但し、図３
において図１及び図２と実質的に同一の部分には同一の
符号を付してその説明を省略する。Embodiments and Examples Next, semiconductor light emitting devices according to examples of the present invention will be described with reference to FIGS. However, FIG.
In FIG. 6, the same reference numerals are given to substantially the same parts as those in FIGS. 1 and 2, and the description thereof is omitted.
【０００９】図３は本発明の実施例の半導体発光装置の
一部を示すものである。図３の半導体発光装置１ａは、
図１の接着剤層１４を新規な接着剤層２０に変え、この
他は図１と同一に構成したものである。従って、実施例
の半導体発光装置１ａは、図３に示されている半導体発
光素子２、金属リード端子３、内部接続導体（リード細
線）６、７、接着剤層２０の他に、図１に示されている
リード端子４、光透過性樹脂封止体８と同様なものも有
している。FIG. 3 shows a part of a semiconductor light emitting device according to an embodiment of the present invention. The semiconductor light emitting device 1a of FIG.
The adhesive layer 14 in FIG. 1 is replaced with a new adhesive layer 20, and the other components are the same as those in FIG. Accordingly, in addition to the semiconductor light emitting element 2, the metal lead terminals 3, the internal connection conductors (lead thin wires) 6, 7 and the adhesive layer 20 shown in FIG. It also has the same lead terminal 4 and light-transmitting resin sealing body 8 as shown.
【００１０】リード端子３に一体に形成された皿状電極
５は、発光素子２の支持体として機能していると共に、
光反射体としても機能している。発光素子２の底面即ち
基板９の下面は、接着剤層２０によって皿状電極５の凹
部５ａの底面に固着されている。発光素子２は、３５０
ｎｍ〜５００ｎｍの紫外線、近紫外線又は可視光青色等
を発光するものであり、絶縁性及び光透過性基板９の上
に窒化ガリウム系半導体領域１０、１１を有する。The dish-shaped electrode 5 formed integrally with the lead terminal 3 functions as a support for the light emitting element 2 and
It also functions as a light reflector. The bottom surface of the light emitting element 2, that is, the bottom surface of the substrate 9 is fixed to the bottom surface of the concave portion 5a of the dish-shaped electrode 5 by an adhesive layer 20. The light emitting element 2 has 350
It emits ultraviolet light of about 500 nm to 500 nm, near-ultraviolet light or visible light blue, and has gallium nitride based semiconductor regions 10 and 11 on an insulating and light transmitting substrate 9.
【００１１】接着剤層２０は、光透過性エポキシ系樹脂
２１と板状薄片としての銀片２２とから成る。樹脂２１
と銀片２２との混合割合は、銀片６０〜８０重量％、樹
脂２０〜４０重量％である。銀片２２の割合を６０重量
％よりも小さくすると、光反射率を高める効果を良好に
得ることができない。また、銀片２２の割合を８０重量
％よりも大きくすると、接着剤層２０の光反射率は向上
するが、接着機能が低下する。The adhesive layer 20 is composed of a light-transmissive epoxy resin 21 and silver flakes 22 as plate-like flakes. Resin 21
The mixing ratio of silver pieces to silver pieces 22 is 60 to 80% by weight of silver pieces and 20 to 40% by weight of resin. If the ratio of the silver pieces 22 is less than 60% by weight, the effect of increasing the light reflectance cannot be obtained satisfactorily. When the proportion of the silver pieces 22 is larger than 80% by weight, the light reflectance of the adhesive layer 20 is improved, but the adhesive function is reduced.
【００１２】銀片２２は、図５の拡大図から明らかなよ
うに平面形状が楕円の板状体であって、長さＬは３０〜
５０μｍ程度、厚みｔは例えば５μｍである。従って、
長さＬと厚みｔとの比は１／６〜１／１０程度である。
板状の銀片２２を溶液状接着剤に混入したものを皿状電
極５の凹部５ａの底面５ｂに塗布すると、銀片２２の大
部分は、銀片の主面２３が凹部５ａの底面５ｂに平行に
なるように配置される。即ち、銀片２２の大部分は、こ
の主面２３が接着剤層２０の主面２４に平行に配置され
る。銀片２２は接着剤層２０に均一に混入されているの
で、接着剤層２０を平面的に見た時に、大部分の領域に
銀片２２が存在し、接着剤層２０の全部が反射体として
機能する。The silver piece 22 is a plate-like body having an elliptical planar shape as apparent from the enlarged view of FIG.
The thickness t is about 50 μm and the thickness t is, for example, 5 μm. Therefore,
The ratio between the length L and the thickness t is about 1/6 to 1/10.
When a plate-like silver piece 22 mixed with a solution adhesive is applied to the bottom surface 5b of the concave portion 5a of the dish-shaped electrode 5, most of the silver piece 22 has the main surface 23 of the silver piece in the bottom surface 5b of the concave portion 5a. Are arranged so as to be parallel to. That is, the main surface 23 of most of the silver pieces 22 is arranged parallel to the main surface 24 of the adhesive layer 20. Since the silver pieces 22 are uniformly mixed in the adhesive layer 20, when the adhesive layer 20 is viewed in a plan view, the silver pieces 22 are present in most areas, and all of the adhesive layer 20 is a reflector. Function as
【００１３】本実施例によれば、発光素子２を皿状電極
５に固着するための接着剤層２０に平板状の銀片２２を
混入したので、発光素子２から下方に放射された光が銀
片２２で良好に上方に反射し、発光効率が向上する。な
お、従来、接着強度を上げるために接着剤の中に球状の
銀粒子を混入することがあるが、従来の球状銀粒子を混
入した場合には光が不特定方向に散乱し、銀粒子は発光
効率の向上にさほど寄与しない。According to this embodiment, since the flat silver pieces 22 are mixed in the adhesive layer 20 for fixing the light emitting element 2 to the dish-shaped electrode 5, the light radiated downward from the light emitting element 2 is reduced. The light is well reflected upward by the silver pieces 22, and the luminous efficiency is improved. In addition, conventionally, spherical silver particles may be mixed in the adhesive in order to increase the adhesive strength, but when the conventional spherical silver particles are mixed, light is scattered in an unspecified direction, and the silver particles are Does not contribute much to the improvement of luminous efficiency.
【００１４】[0014]
【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。 （１） 電極５に凹部５ａが無い場合にも本発明を適用
することができる。 （２） 板状薄片として銀片２２以外の金属等から成る
光反射物体を接着剤２１に混入することができる。 （３） 接着剤２１としてエポキシ系樹脂以外の光透過
性接着剤を使用することができる。 （４） 銀片２２の主面２３を凹部５ａの底面５ｂに平
行にするために、接着剤２１が固化する前に超音波等で
振動を加えることができる。 （５） 銀片２２等の光反射薄片の大きさは、発光素子
２の大きさに合せて変えることができる。図５の長さＬ
は２０〜１００μｍ程度、幅Ｗは１０〜５０μｍ程度、
厚さｔは２〜１０μｍ程度にすることが望ましい。[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) The present invention can be applied even when the electrode 5 does not have the concave portion 5a. (2) A light reflecting object made of a metal or the like other than the silver piece 22 can be mixed into the adhesive 21 as a plate-like thin piece. (3) As the adhesive 21, a light-transmitting adhesive other than the epoxy resin can be used. (4) In order to make the main surface 23 of the silver piece 22 parallel to the bottom surface 5b of the recess 5a, vibration can be applied by ultrasonic waves or the like before the adhesive 21 is solidified. (5) The size of the light reflecting flake such as the silver piece 22 can be changed according to the size of the light emitting element 2. Length L in FIG.
Is about 20 to 100 μm, the width W is about 10 to 50 μm,
It is desirable that the thickness t be about 2 to 10 μm.
【図１】従来の半導体発光装置を概略的に示す断面図で
ある。FIG. 1 is a sectional view schematically showing a conventional semiconductor light emitting device.
【図２】図１の発光ダイオードチップの拡大断面図であ
る。FIG. 2 is an enlarged sectional view of the light emitting diode chip of FIG.
【図３】実施例の半導体発光装置の一部を示す断面図で
ある。FIG. 3 is a cross-sectional view showing a part of the semiconductor light emitting device of the embodiment.
【図４】図３の接着剤層の一部を拡大して示す断面図で
ある。FIG. 4 is an enlarged sectional view showing a part of the adhesive layer of FIG. 3;
【図５】図３の銀片を拡大して示す斜視図である。FIG. 5 is an enlarged perspective view showing a silver piece of FIG. 3;
１ａ 半導体発光装置 ２ 半導体発光素子 ３、４ リード端子 ５ 皿状電極 ２０ 接着剤層 ２１ 接着剤 ２２ 板状銀片 1a semiconductor light emitting device 2 semiconductor light emitting element 3, 4 lead terminal 5 dish-shaped electrode 20 adhesive layer 21 adhesive 22 plate-shaped silver piece
Claims (2)
の支持体と、前記半導体発光素子を前記支持体に固着す
るための接着剤層とを備えた半導体発光装置において、 前記接着剤層に光反射層を有する板状薄片が混入されて
いることを特徴とする半導体発光装置。1. A semiconductor light emitting device comprising: a semiconductor light emitting element; a support for the semiconductor light emitting element; and an adhesive layer for fixing the semiconductor light emitting element to the support. A semiconductor light emitting device, wherein a plate-shaped flake having a reflective layer is mixed.
する請求項１記載の半導体発光装置。2. The semiconductor light emitting device according to claim 1, wherein said plate-like thin piece is a silver piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17693299A JP3028813B1 (en) | 1999-06-23 | 1999-06-23 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17693299A JP3028813B1 (en) | 1999-06-23 | 1999-06-23 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP3028813B1 JP3028813B1 (en) | 2000-04-04 |
| JP2001007391A true JP2001007391A (en) | 2001-01-12 |
Family
ID=16022273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17693299A Expired - Fee Related JP3028813B1 (en) | 1999-06-23 | 1999-06-23 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3028813B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175427A (en) * | 2003-12-05 | 2005-06-30 | Internatl Resistive Co Of Texas Lp | Light emitting assembly with support for heat dissipation |
| JP2009010360A (en) * | 2007-05-31 | 2009-01-15 | Toshiba Lighting & Technology Corp | Lighting device |
| JP2011086823A (en) * | 2009-10-16 | 2011-04-28 | Sony Chemical & Information Device Corp | Light-reflective conductive particle, anisotropic conductive adhesive, and light-emitting device |
| DE102016113969A1 (en) * | 2016-07-28 | 2018-02-01 | Osram Opto Semiconductors Gmbh | A radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips, radiation-emitting component and method for producing a radiation-emitting component |
-
1999
- 1999-06-23 JP JP17693299A patent/JP3028813B1/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175427A (en) * | 2003-12-05 | 2005-06-30 | Internatl Resistive Co Of Texas Lp | Light emitting assembly with support for heat dissipation |
| JP2009010360A (en) * | 2007-05-31 | 2009-01-15 | Toshiba Lighting & Technology Corp | Lighting device |
| JP2011086823A (en) * | 2009-10-16 | 2011-04-28 | Sony Chemical & Information Device Corp | Light-reflective conductive particle, anisotropic conductive adhesive, and light-emitting device |
| US8796725B2 (en) | 2009-10-16 | 2014-08-05 | Dexerials Corporation | Light-reflective conductive particle, anisotropic conductive adhesive and light-emitting device |
| TWI450280B (en) * | 2009-10-16 | 2014-08-21 | Dexerials Corp | Light reflective conductive particles, anisotropic conductive adhesives and light-emitting devices |
| US9340710B2 (en) | 2009-10-16 | 2016-05-17 | Dexerials Corporation | Light-reflective conductive particle, anisotropic conductive adhesive and light-emitting device |
| DE102016113969A1 (en) * | 2016-07-28 | 2018-02-01 | Osram Opto Semiconductors Gmbh | A radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips, radiation-emitting component and method for producing a radiation-emitting component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3028813B1 (en) | 2000-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8823031B2 (en) | Semiconductor light emitting device including metal reflecting layer | |
| TW541724B (en) | Light-emitting device using LED chip | |
| US7956364B2 (en) | Thin film light emitting diode | |
| US6833566B2 (en) | Light emitting diode with heat sink | |
| US10686108B2 (en) | Semiconductor device package | |
| JP5509307B2 (en) | Light emitting diode package | |
| US20080035948A1 (en) | Light emitting diode package | |
| KR20080049828A (en) | Light emitting device | |
| JP2003197972A (en) | High-luminance light emitting diode | |
| TWI603506B (en) | Light emitting diode package | |
| JP2004296882A (en) | Semiconductor light emitting device | |
| KR20040092512A (en) | A semiconductor light emitting device with reflectors having a cooling function | |
| US6091084A (en) | Semiconductor light emitting device | |
| CN100454587C (en) | Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same | |
| TWI628811B (en) | Light-emitting element | |
| JP4345591B2 (en) | Light emitting device | |
| US20190355888A1 (en) | Light emitting chip and associated package structure | |
| JP2003243704A (en) | Light emitting semiconductor device and method | |
| JP3028813B1 (en) | Semiconductor light emitting device | |
| WO2008038997A1 (en) | Light emitting diode package employing leadframe with plated layer of high brightness | |
| TW506145B (en) | High Luminescence LED having transparent substrate flip-chip type LED die | |
| CN1194424C (en) | High-brightness light-emitting bipolar body with transparent base and light-emitting bipolar crystallite | |
| CN103000794B (en) | LED package structure | |
| TWI491078B (en) | Smd light-emitting diode | |
| JP2001358367A (en) | Chip type light emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080204 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090204 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100204 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |