JP2001006898A - Microwave neutralizer and ion beam treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of a bias in the variation of plasma density. SOLUTION: A microwave introduction tube 34 having microwave introduction passages 34a, 34b is connected to the circumferential side of a band-like electrode 36 formed so as to surround an ion beam generated from an ion source, two lines of magnet groups M1, M2 are arranged, and the permanent magnet groups M1, M2 in the respective lines are so arranged that their magnetizing directions are reversed by using the center axis of the microwave introduction tube 34 as a boundary. Microwave plasma 42a, 42b is generated by the microwave introduced from the respective microwave introduction passages 34a, 34b, the microwave plasma 42a moves in the direction Z1 and the microwave plasma 42b moves in the direction Z2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave neutralizer and an ion beam processing apparatus, and more particularly to a microwave neutralizer suitable for neutralizing an ion beam irradiated on a sample and a microwave neutralizer. The present invention relates to an ion beam processing device using a sump.

[0002]

2. Description of the Related Art As an ion beam treatment apparatus, there are known a sputtering apparatus for forming a film on a sample such as a substrate using an ion beam and a milling apparatus for performing fine processing on a substrate. When performing film formation processing or microfabrication processing on a substrate using these ion beam processing devices, the substrate is irradiated with an ion beam generated from an ion source as it is, and the substrate is irradiated with a positively charged ion beam. Is positively charged. If the substrate is continuously irradiated with the ion beam in this state, a discharge phenomenon occurs on the substrate surface,
The required performance as a substrate may not be obtained. Therefore, a neutralizer for adding electrons to the ion beam irradiated on the substrate to neutralize the ion beam is employed in an ion beam processing apparatus.

Conventionally, a filament type neutralizer using a heavy metal such as tungsten or tantalum has been employed as this type of neutralizer. The filament type neutralizer comprises a filament made of tungsten or tantalum, emits thermoelectrons by heating the filament, and adds the thermoelectrons to the ion beam to neutralize the ion beam.

However, since the filament type neutralizer has a structure in which the filament is directly exposed to the ion beam, the filament must be replaced frequently. Must be opened, and the workability is reduced. In addition, heavy metals such as tungsten may contaminate the object, and the performance of the object (substrate) may be reduced.

On the other hand, as a neutralizer which does not use a filament, for example, as described in JP-A-63-157887, plasma is generated by microwave discharge, and the plasma is passed through micropores. There has been proposed one in which electrons are supplied to an ion beam to neutralize the ion beam. According to this neutralizer, compared to the method of neutralizing an ion beam using a hollow cathode having a filament that emits thermoelectrons inside, it is possible to operate for a long time, particularly when using a reaction gas, Suitable for neutralizing neutral ion beams. Further, since a filament is not used, a heavy metal such as tungsten does not contaminate an object to be processed, and clean ion beam processing can be performed. However, this neutralizer is difficult to apply to a large-diameter ion source due to its configuration.

Therefore, as described in Japanese Patent Application Laid-Open No. 8-296060, a microwave neutralizer that can be applied to a large-diameter ion source has been proposed. In this microwave neutralizer, a band-shaped electrode (cylindrical electrode) formed so as to surround an ion beam generated from an ion source is provided, and two rows of permanent magnets are annularly arranged on the outer peripheral side of the band-shaped electrode. The microwave from a microwave power source is guided to the microwave introduction port formed in a part of the strip electrode, and microwave plasma is formed between the inner peripheral side of the strip electrode and the ion beam. Is used to neutralize the ion beam. According to this microwave neutralizer, the ion beam can be neutralized by enlarging the diameter of the band-shaped electrode even for an ion source having a large diameter. In other words, a microwave neutralizer is called electron cyclotron resonance by introducing microwaves from a microwave power supply through a waveguide to a strip electrode and applying a magnetic field by a permanent magnet to the introduced microwaves. Due to the phenomenon, the energy of the introduced microwave is transmitted to the gas in the annular electrode to form a microwave plasma. This microwave plasma is a multi-ring cusp magnetic field (a magnetic field formed by permanent magnets arranged around the annular electrode).
Thus, the ion beam is confined between the inner peripheral side of the annular electrode and the ion beam, and moves around the ion beam due to a magnetic field gradient drift.

[0007]

In the prior art, when forming a microwave plasma, a multi-ring cusp magnetic field, or the like, two rows of permanent magnets are arranged on the outer peripheral side of the annular electrode, and the permanent magnets in each row are Each magnetic pole is arranged so as to face the radial direction of the annular electrode, and it is arranged in a direction where the polarity is inverted with respect to the opposed permanent magnet, but since a single microwave introduction port is formed in the annular electrode However, when neutralizing a circular ion beam irradiated from an ion source, the microwave plasma moves in only one direction around the ion beam due to a magnetic field gradient drift, so that the plasma density increases sharply in the circumferential direction of the ion beam. In some cases, the plasma density changes discontinuously or non-uniformly, and the ion beam can be neutralized uniformly. It may not come.

It is an object of the present invention to apply a microwave neutralizer and an ion beam processing apparatus which can prevent a change in plasma density from being biased.

[0009]

In order to achieve the above object, the present invention provides an ion beam generated from an ion source, which is formed in an annular shape so as to surround a periphery thereof, and a microwave inlet is formed in a part of the annular shape. An annular electrode, a microwave introduction pipe connected to the microwave introduction port and the microwave generation source, and introducing a microwave from the microwave generation source into the microwave introduction port, and applying a bias voltage to the annular electrode. A bias power source, and applying a magnetic field to the microwaves arranged on the outer peripheral side of the annular electrode and introduced to the microwave introduction port to form microwave plasma between the ion beam in the annular electrode and the annular electrode; Confining and moving the microwave plasma between the ion beam in the annular electrode and the annular electrode according to the magnetic field and magnetic field gradient Comprising a number of magnetic substances, between the ion beam in the annular electrode and the annular electrode, microwave plasma due to a plurality of magnetic field gradient drift in different directions according to the arrangement of the plurality of magnetic substances is moved , A microwave neutralizer.

In constructing the microwave neutralizer, a plurality of microwave inlets are formed in a part of the annular electrode, or a microwave inlet tube is connected to the plurality of microwave inlets and the microwave generation source. What was done can be used.

In constituting each of the microwave neutralizers, the following elements can be added.

(1) The plurality of magnetic bodies are arranged in a plurality of rows on the outer peripheral side of the annular electrode, and the magnetic bodies in each row are arranged such that each magnetic pole is oriented along the radial direction of the annular electrode. In addition, the magnetic members in the different rows are arranged in a direction different in polarity from the magnetic material opposed to the magnetic material.

(2) The plurality of magnetic bodies are arranged in a plurality of rows on the outer peripheral side of the annular electrode, and the magnetic bodies in each row are arranged such that each magnetic pole is oriented along a radial direction of the annular electrode. In addition, the magnetic poles are divided into two groups having different magnetic pole directions with respect to the center axis of the microwave introduction tube, and are arranged in directions different in polarity from the magnetic bodies facing each other among the magnetic bodies in different rows. Be done.

Further, the present invention provides a sample holding means for holding a sample, a vacuum chamber for holding the sample holding means which is kept in a vacuum, and irradiating an ion beam to the sample placed in the vacuum chamber. A microwave neutralizer disposed in the vacuum chamber to neutralize an ion beam from the ion source, wherein the microwave neutralizer includes any one of the microwave neutralizers. This constitutes an ion beam processing apparatus using.

According to the above means, a plurality of microwave plasmas are moved between the ion beam in the annular electrode and the annular electrode due to a magnetic field gradient drift having different directions in accordance with the arrangement of the plurality of magnetic substances. When the microwave plasma moves around the ion beam, the area where the plasma density rapidly changes in the circumferential direction of the ion beam is reduced, and the bias of the change in the plasma density can be reduced. This can contribute to improvement of discontinuity of plasma density change and improvement of ion beam neutralization distribution characteristics.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an overall configuration diagram of an ion beam milling device equipped with a microwave neutralizer. FIG.
In the ion beam milling apparatus, an ion source 10 and a microwave neutralizer 1 are used as an ion beam processing apparatus.
2. It is provided with a substrate holder 14, a processing chamber 16, a DC power supply (neutral power supply) 18 for a neutralizer, and the like. The processing chamber 16 is connected to a vacuum evacuation device, and has a high inside as a vacuum chamber. It is kept in a vacuum.

The ion source 10 has a cylindrical main body 20 having an open end, and the main body 20 is formed on the upper side wall of the processing chamber 16 so as to close the opening 22 on the upper side of the processing chamber 16. Fixed. On the upper side of the main body 20, a gas inlet 24 for introducing a process gas, for example, argon, is formed.
6 are arranged. On the other hand, a plurality of extraction electrodes 28 formed in a disc shape are arranged on the bottom side of the main body 20, and each extraction electrode 28 is connected to an acceleration power supply (positive DC power supply) 1.
9 or a deceleration power supply (negative DC power supply). Each extraction electrode 28 has a plurality of microholes formed over the entire surface as ion beam emission ports. The ion source 10 converts the process gas into plasma by heating the process gas with the filament 26 and applying a voltage to each extraction electrode 28 to extract ions from the plasma-converted gas.
Irradiation is performed toward the processing substrate 32 on the upper surface of the substrate 4.

A processing substrate 32 is fixed as a sample on a substrate holder 14 as a sample holding means. By irradiating the processing substrate 32 with an ion beam 30, fine processing can be performed on the processing substrate 32. it can. In this case, when the processing substrate 32 is irradiated with the positively charged ion beam 30, a discharge phenomenon occurs, which may adversely affect the processing substrate 32. Therefore, in the present embodiment, the microwave neutralizer 12 is used to neutralize the ion beam 30 by adding electrons to the ion beam 30 and irradiate the neutralized ion beam 30 to the processing substrate 32. I have.

The microwave neutralizer 12 includes a microwave introducing tube 34, an annular electrode 36, a DC power supply 18 for the neutralizing device, and a pair of permanent magnet groups M1 and M2. A strip electrode 36 is fixed to an upper side wall surface in the processing chamber 16. In opposition to the microwave introduction tube 34, a disc-shaped quartz glass 38 is provided on the upper side wall surface outside the processing chamber chamber 16 by the microwave waveguide 4.
It is fixed in a state where it is supported on the front end side of the zero. The microwave waveguide 40 is configured as a microwave introduction means together with the microwave introduction tube 34, and the microwave introduction tube 40 is a microwave power source (not shown) serving as a microwave generation source for generating a microwave of 2.45 GHz. )It is connected to the. That is, the microwave from the microwave power source is supplied to the microwave introduction pipe 34 by the microwave waveguide 4.
0, introduced through the quartz glass 38. Further, one end of the microwave introduction tube 34 is integrally fixed to the outer peripheral side of the annular electrode 36, and the microwave introduction tube 34 has two ends on the annular electrode 36 side as shown in FIGS. 2 and 3. One microwave introduction path 34a, 34b is formed.
Then, corresponding to the microwave introduction paths 34a and 34b, the annular electrodes 36 have microwave introduction ports 36a and 36a.
b is formed.

The belt-like electrode 36 is formed in a cylindrical shape as an annular electrode, and permanent magnet groups M1 and M2 as a magnetic material are fixed on the outer peripheral side of the belt-like electrode 36 in two rows. The permanent magnet groups M1 and M2 in each row are arranged so that the magnetic poles are oriented in the radial direction of the strip electrode 36, and the directions of the magnetic poles are different with respect to the center axis of the microwave introduction tube 34. The permanent magnets are divided into two groups and are arranged so that the polarity of the permanent magnets in the different rows is different from that of the opposing permanent magnets.

That is, the permanent magnet group M1 includes a plurality of permanent magnets M10 and M11. Each of the permanent magnets M10 is arranged such that the inside has an N pole and the outside has an S pole. A plurality of permanent magnets M10 and M11 are arranged over a half circumference of the strip-shaped electrode 36, respectively, so that the outer side is an N pole on the S pole. Further, the permanent magnet group M2 includes a plurality of permanent magnets M20 and M21,
Each permanent magnet M20 is arranged such that the inside has an S pole and the outside has an N pole, and each permanent magnet M21 has an inside having an N pole and an outside having an S pole.
A plurality of permanent magnets M20, M2
1 are arranged over a half circumference of the strip electrode 36. The magnetization direction of each of the permanent magnets M10 and M21 is X
The magnetization direction of each of the permanent magnets M11 and M20 is set to the Y direction. The permanent magnet groups M1 and M2 are arranged so as to satisfy the following three conditions.

(1) Electron cyclotron resonance (Elect
tron Cyclotron Resonance;
ECR) condition 875 G for microwave of frequency 2.45 GHz
A (Gaussian) magnetic field strength is given, and a microwave plasma 42 is formed between the strip electrode 36 and the ion beam 30 by the introduced microwave. That is, when the ECR condition is satisfied, the electrons in the annular electrode 36 are excited, and the excited high-energy electrons collide with the gas to generate the microwave plasma 42.

(2) Formation of Multi-Ring Cusp Magnetic Field The generated microwave plasma 42 is confined between the annular electrode 36 and the ion beam 30.

(3) Magnetic Field Gradient Drift (Formation of Plasma Ring) As shown in FIG. 4, the intensity of the magnetic field generated by the magnet groups in each row gradually increases from the inner peripheral side of the strip electrode 36 toward the center. Since it weakens, a magnetic field gradient ΔB is generated in the radial direction of the strip electrode 36. As a result, the electrons in the magnetic field move in a direction orthogonal to the magnetic field gradient ΔB and the magnetic field B (magnetic field gradient drift). This magnetic field gradient drift is caused by the ion beam 30
, And a plasma ring is formed on the inner peripheral side of the strip electrode 36 due to the magnetic field gradient drift.

When the above three conditions are satisfied, microwaves 42a and 42b are formed near the microwave inlets 36a and 36b by the microwaves introduced from the microwave inlets 34a and 34b, respectively. The wave plasma 42a moves in the direction of arrow Z1 due to the magnetic field gradient drift, and the other microwave plasma 42b
Move in the direction of arrow Z2 due to the magnetic field gradient drift.

When the microwave plasmas 42a, 42b having different moving directions (Z1, Z2) move around the ion beam 30, the density of the microwave plasma 42 (microwave plasma including the microwave plasma 42a and the microwave plasma 42b) is increased. 5, as shown in FIG. 5, the region where the plasma density changes rapidly becomes almost uniform in the circumferential direction, and there is no region where the plasma density changes abruptly. Can be reduced.

That is, by using the microwave plasma 42 as a bridge, electrons from the DC power supply 18
And the ion beam 30 is neutralized. In this case, the plasma density changes depending on the gas pressure and the microwave output, and the higher the plasma density, the more the ion beam 30 can be neutralized.

Next, a second embodiment of the present invention will be described with reference to FIG.

In this embodiment, two microwave introduction tubes 4
4 and 46 are arranged adjacent to each other, and the respective microwave introduction tubes 44 and 46 are connected to the outer peripheral side of the annular electrode 36;
Microwaves are introduced into the annular electrode 36 from the respective microwave introduction tubes 44 and 46, and three rows of magnet groups M1, M2 and M3 are arranged on the outer peripheral side of the annular electrode 36 so as to face each other.

Each group of magnets M1, M2, and M3 includes a plurality of permanent magnets M10, M20, and M30. Each of the permanent magnets M10 to M30 is arranged in an annular shape. Each of the permanent magnets M10 is arranged so that the inner side is the north pole and the outer side is the south pole.
0 is arranged such that the inside has an S pole and the outside has an N pole, and each permanent magnet M30 is arranged such that the inside has an N pole and the outside has an S pole, and the magnetization direction of each permanent magnet N10. Is X
The magnetization direction of each permanent magnet M20 is set in the Y direction, and the magnetization direction of each permanent magnet M30 is set in the X direction.

Each of the magnet groups M1 to M3 having the above configuration satisfies the above three conditions, and the microwave introduction tubes 44, 4
6 is introduced into the microwave introduction pipe 44.
Microwave plasma 4 by microwave introduced from
2a is generated, and the microwave plasma 42a moves along the direction of arrow Z1. On the other hand, the microwave introduction pipe 4
Microwave plasma 42b is generated by the microwave introduced from 6, and this microwave plasma 42b moves in the direction of arrow Z2. That is, the annular electrode 36
Inside, a microwave plasma 42 is formed around the ion beam 30 by two magnetic field gradient drifts having different directions.
a and 42b move in mutually different directions.

According to this embodiment, since the microwave plasmas 42a and 42b move around the ion beam 30 according to two magnetic field gradient drifts having different directions, the plasma density is made uniform around the circumference. Thus, the bias of the neutralization distribution characteristic of the ion beam 30 due to the swirling motion of the microwave plasma can be reduced.

Further, in the present embodiment, the description has been given of the case where the two microwave introduction pipes 44 and 46 and the three groups of magnet groups M1 to M3 are provided, but three or more microwave introduction pipes are arranged. By arranging four or more rows of permanent magnet groups, one more than the number of microwave introduction tubes, and arranging the magnet groups of each row so that the magnetization directions are different from each other, three or more magnetic field gradient drifts Accordingly, a plurality of microwave plasmas can be moved around the ion beam 30 in different directions.

Next, a third embodiment of the present invention will be described with reference to FIG.

In this embodiment, a microwave introduction tube 48 having a single microwave introduction path is connected to the outer periphery of the strip electrode 36, and the microwave introduction tube 4 is connected to the outer periphery of the band electrode 36.
8, two rows of magnet groups M1 and M2 are arranged.

The magnet group M1 includes a plurality of permanent magnets M10, M1.
1 and a plurality of permanent magnets M10 and M10.
11 are arranged over a half circumference of the strip electrode 36. The magnet group M2 includes a plurality of permanent magnets M20, M21.
And a plurality of permanent magnets M20, M2
1 are arranged over a half circumference of the strip electrode 36. That is, the permanent magnet groups M1 and M2 in each row are divided into two groups by permanent magnets having different magnetic pole directions, and the permanent magnets M10 and M1 in each group are arranged.
1, M20 and M21 are arranged separately from each other with the center axis of the microwave introduction tube 48 as a boundary. The permanent magnet groups M1 and M2 have a configuration in which the magnetization directions are reversed in the arrow X direction and the arrow Y direction around the center axis of the microwave introduction tube 48.

In the present embodiment, the above three conditions are satisfied, and when microwaves are introduced by the microwave introduction tube 48, a microwave plasma 42 is formed near the microwave introduction port of the strip electrode 36. . In this case, since the magnetization directions of the permanent magnet groups M1 and M2 are reversed around the center axis of the microwave introduction tube 48, the generated microwave plasma 42 is branched into two, and one of the microwave plasmas 42a Moves along the direction of arrow Z1, and the other microwave plasma 42b moves along the direction of arrow Z2. That is, two microwave plasmas 42 are generated according to two magnetic field gradient drifts having different directions.
a and 42b move in different directions.

According to the present embodiment, the microwave plasma 4 is generated according to two magnetic field gradient drifts having different directions.
Since 2a and 42b move around the ion beam 30 in different directions, the plasma density can be made uniform, and the bias of the neutralization distribution characteristic of the ion beam 30 can be reduced.

[0039]

As described above, according to the present invention,
The microwave plasma moves around the ion beam between the ion beam in the ring electrode and the ring electrode because a plurality of microwave plasmas move due to magnetic field gradient drifts having different directions according to the arrangement of the plurality of magnetic substances. When moving the ion beam, the area where the plasma density changes rapidly in the circumferential direction of the ion beam can be reduced, and the bias of the change in the plasma density can be reduced. This can contribute to improvement and improvement of ion beam neutralization distribution characteristics.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of an ion beam milling apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a main part of the microwave neutralizer.

FIG. 3 is a schematic diagram for explaining a relationship between a microwave introduction tube and a permanent magnet.

FIG. 4 is a diagram for explaining a magnetic field gradient drift.

FIG. 5 is a diagram showing plasma density characteristics.

FIG. 6 is a schematic diagram showing a second embodiment of the present invention.

FIG. 7 is a schematic diagram showing a third embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Ion source 12 Microwave neutralizer 14 Substrate holder 16 Processing chamber 18 DC power supply for neutralizer 26 Filament 28 Extraction electrode 30 Ion beam 32 Processing substrate 34 Microwave introduction tube 42 Microwave plasma 44, 46, 48 Microwave introduction tube

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01J 37/08 H01J 37/08 H01L 21/302 H01L 21/302 Z (72) Inventor Satoshi Ogura Hitachi, Ibaraki 1-1-1, Kokubuncho, Ichikuchi-cho Kokubu Factory, Hitachi, Ltd. (72) Inventor Hisao Onuki 1-1-1, Kokubuncho, Hitachi City, Ibaraki Pref. Hitachi, Ltd. Kokubu Factory, Hitachi, Ltd. (72) Satoshi Ichimura 7-2-1, Omika-cho, Hitachi City, Ibaraki Prefecture F-term in the Power & Electricity Development Division, Hitachi, Ltd. 4K029 DC48 DE02 4K057 DA16 DD04 DM04 DM06 DM22 DM29 5C030 DD04 DD05 DE01 DG07 5F004 BA11 BA14 BB07 BB12 BB14 DA23

Claims (5)

[Claims] 1. An annular electrode formed in an annular shape so as to surround an ion beam generated from an ion source and having a microwave introduction port formed in a part of an annular shape, and connected to the microwave introduction port and a microwave generation source. A microwave introduction tube for introducing a microwave from the microwave generation source into the microwave introduction port, a bias power supply for applying a bias voltage to the annular electrode, and the microwave disposed on an outer peripheral side of the annular electrode. A magnetic field is applied to the microwave introduced into the wave inlet to form and confine microwave plasma between the ion beam in the annular electrode and the annular electrode, and to convert the microwave plasma into an ion beam in the annular electrode. A plurality of magnetic substances to move between the annular electrode according to the magnetic field and the magnetic field gradient, and an ion beam in the annular electrode A microwave neutralizer in which microwave plasma due to a plurality of magnetic field gradient drifts having different directions in accordance with the arrangement of the plurality of magnetic bodies is moved between the annular electrode and the annular electrode. 2. An annular electrode formed in an annular shape so as to surround an ion beam generated from an ion source, wherein a plurality of microwave introduction ports are formed in a part of the annular shape, and the plurality of microwave introduction ports and the microwave. A microwave introduction tube connected to a generation source for introducing microwaves from the microwave generation source into the microwave introduction port, a bias power supply for applying a bias voltage to the annular electrode, and arranged on an outer peripheral side of the annular electrode Then, a magnetic field is applied to the microwave introduced into the microwave introduction port to form and confine microwave plasma between the ion beam in the annular electrode and the annular electrode, and the microwave plasma is contained in the annular electrode. A plurality of magnetic materials to move between the ion beam and the annular electrode according to the magnetic field and the magnetic field gradient,
A microwave neutralizer in which microwave plasma due to a plurality of magnetic field gradient drifts having different directions according to the arrangement of the plurality of magnetic substances is moved between the ion beam in the annular electrode and the annular electrode. 3. The plurality of magnetic bodies are arranged in a plurality of rows on the outer peripheral side of the annular electrode, and the magnetic bodies in each row are arranged such that each magnetic pole is oriented along a radial direction of the annular electrode. 3. The microwave neutralizer according to claim 2, wherein the polarizers are arranged in directions different in polarity from opposing magnetic bodies among magnetic bodies in different rows. 4. The plurality of magnetic bodies are arranged in a plurality of rows on the outer peripheral side of the annular electrode, and the magnetic bodies in each row are arranged such that each magnetic pole is oriented along a radial direction of the annular electrode. In addition, the magnetic poles are divided into two groups having different directions with respect to the center axis of the microwave introduction tube, and are arranged in directions different in polarity from the magnetic bodies facing each other among the magnetic bodies in different rows. 3. The method according to claim 1, wherein
The described microwave neutralizer. 5. A sample holding means for holding a sample, a vacuum chamber which is held in a vacuum and houses the sample holding means,
An ion source that irradiates an ion beam toward a sample placed in the vacuum chamber, and a microwave neutralizer that is placed in the vacuum chamber and neutralizes the ion beam from the ion source, An ion beam processing apparatus, wherein the microwave neutralizer is constituted by the microwave neutralizer according to claim 1, 2, 3, or 4.