JP2001004877A - Optical waveguide, optical module and optical system - Google Patents
Optical waveguide, optical module and optical systemInfo
- Publication number
- JP2001004877A JP2001004877A JP11175056A JP17505699A JP2001004877A JP 2001004877 A JP2001004877 A JP 2001004877A JP 11175056 A JP11175056 A JP 11175056A JP 17505699 A JP17505699 A JP 17505699A JP 2001004877 A JP2001004877 A JP 2001004877A
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- Japan
- Prior art keywords
- optical
- core
- optical waveguide
- light
- cladding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、導波路型レンズお
よび光モジュールおよび光通信システムに関する。The present invention relates to a waveguide lens, an optical module, and an optical communication system.
【０００２】[0002]
【従来の技術】一般に半導体レーザはビーム放射角が広
いため、光ファイバと直接結合した場合には、十分な光
結合効率は得られない。このため、従来から、光モジュ
ール内で光ファイバと半導体レーザを結合させる場合に
は、光学レンズを用いる方法や、先球ファイバと呼ばれ
る先端にレンズ機能を持たせた光ファイバを用いる方法
が取られてきた。また、半導体レーザにビーム放射角を
狭めるためのビーム拡大器を集積する試みも成されてき
た。なお、先球ファイバに関する記載は、IEEEPhoton.
Technol. Lett.,vol.PTL-16, No.3, pp.465-471,
1998に、また、ビーム拡大器集積化半導体レーザに関
する記載は特開平９−１０２６５１にある。2. Description of the Related Art In general, a semiconductor laser has a wide beam emission angle, so that when directly coupled to an optical fiber, sufficient optical coupling efficiency cannot be obtained. For this reason, conventionally, when an optical fiber and a semiconductor laser are coupled in an optical module, a method using an optical lens or a method using an optical fiber having a lens function at the tip called a tip spherical fiber has been adopted. Have been. Attempts have also been made to integrate a beam expander for narrowing the beam emission angle in a semiconductor laser. The description of the spherical fiber is described in IEEE Photon.
Technol. Lett., Vol. PTL-16, No. 3, pp. 465-471,
A description of a semiconductor laser integrated with a beam expander in 1998 is given in Japanese Patent Application Laid-Open No. 9-102651.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上記光学レ
ンズを用いる方法では、半導体レーザ、光学レンズおよ
び光ファイバの光軸を高い精度で合わせる必要があり、
組み立て工程が複雑になるという問題がある。また、先
球ファイバを用いる場合にも同様の高い位置合わせ精度
が必要である。また、ビーム拡大器集積化半導体レーザ
には、ビーム拡大器の集積に伴い、レーザ発振特性が劣
化し易いという問題があった。By the way, in the method using the above optical lens, it is necessary to align the optical axes of the semiconductor laser, the optical lens and the optical fiber with high accuracy.
There is a problem that the assembly process becomes complicated. Also, when using a spherical fiber, similar high positioning accuracy is required. In addition, the beam expander-integrated semiconductor laser has a problem that the laser oscillation characteristics are likely to deteriorate with the integration of the beam expander.
【０００４】本発明の目的は、簡易な実装工程でかつ発
振特性を損なうことなく、半導体レーザからの光を高効
率で光ファイバに結合させることができる光導波路およ
びそれを用いた光モジュール、光システムを提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an optical waveguide capable of coupling light from a semiconductor laser to an optical fiber with high efficiency in a simple mounting process and without deteriorating oscillation characteristics, an optical module using the same, and an optical module. It is to provide a system.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
には、光源との光軸ズレが大きくても集光が可能なレン
ズがあればよい。そこで、本発明では、クラッド層の少
なくとも一部に、金属もしくはフォトニッククリスタル
（Photonic Crystal；以下、単にＰＣと略記する）と
呼ばれる材料を用い、上記特徴を有する導波路型レンズ
を提供する。In order to solve the above-mentioned problems, it is only necessary to provide a lens capable of condensing light even if the optical axis deviation from the light source is large. Therefore, the present invention provides a waveguide type lens having the above characteristics by using a material called metal or photonic crystal (hereinafter simply abbreviated as PC) for at least a part of the cladding layer.
【０００６】以下に本発明の導波路型レンズが上記特徴
を有する理由を述べる。光の波長がＰＣのPhotonic ba
ndgap内にある場合には、光は入射角度に関わらずＰＣ
の表面で全反射される。このため、光導波路のクラッド
層にＰＣを用いれば、導波路形状に関わらず、コアに入
射した全ての光をコア内に閉じ込めて散逸させることな
く導波することができる。また、クラッド層に金属を用
いてもほぼ同様の効果が得られることが知られている。Hereinafter, the reason why the waveguide type lens of the present invention has the above characteristics will be described. Light wavelength is PC Photonic ba
When in the ndgap, the light is transmitted to the PC regardless of the angle of incidence.
It is totally reflected on the surface of. Therefore, if PC is used for the cladding layer of the optical waveguide, all the light incident on the core can be guided without being confined in the core and dissipated irrespective of the waveguide shape. Also, it is known that substantially the same effect can be obtained even if a metal is used for the cladding layer.
【０００７】このため、本発明の導波路型レンズでは、
コア径を前端面から内部に向いテーパ状に変調すること
によって、コアに入射した半導体レーザからの広がった
光をほぼ全て光ファイバの固有モードに変換して後端面
から放射することができる。光ファイバの固有モード同
士では光軸ズレが多少あっても良好な光結合効率が得ら
れるので、本導波路型レンズから放射された光からは、
光ファイバとの位置合わせ精度が低くても十分な光結合
効率が得られる。Therefore, in the waveguide type lens of the present invention,
By modulating the core diameter in a tapered shape from the front end face toward the inside, almost all of the spread light from the semiconductor laser incident on the core can be converted into the eigenmode of the optical fiber and emitted from the rear end face. Since good optical coupling efficiency can be obtained between the eigenmodes of the optical fiber even if there is a slight optical axis deviation, from the light radiated from the present waveguide type lens,
Sufficient optical coupling efficiency can be obtained even if the alignment accuracy with the optical fiber is low.
【０００８】また、本導波路型レンズでは、半導体レー
ザからの光はコアに入射しさえすればよく、いずれの位
置や角度で入射してもよい。そこで、前端面でのコア径
に余裕を持たせれば、半導体レーザと本導波路型レンズ
との間で光軸ズレが生じていても、半導体レーザの光の
大半を直接コアに入射できるので、位置合わせ精度が低
くても十分な光結合効率が得られる。In the present waveguide type lens, the light from the semiconductor laser only needs to be incident on the core, and may be incident at any position or angle. Therefore, if a margin is provided for the core diameter at the front end face, even if an optical axis shift occurs between the semiconductor laser and the present waveguide type lens, most of the light of the semiconductor laser can directly enter the core. Even if the positioning accuracy is low, sufficient optical coupling efficiency can be obtained.
【０００９】なお、金属もしくはＰＣをクラッドに用い
ると、Ｔ分岐やＬ曲がりを有する低損失導波路が作れる
ことは従来から示されているが、これらの材料の性質を
利用した導波路型レンズの提案はなかった。It has been shown that a low-loss waveguide having a T-branch or an L-bend can be formed by using metal or PC for the clad. However, a waveguide type lens utilizing the properties of these materials has been proposed. There was no suggestion.
【００１０】[0010]
【発明の実施の形態】図１に、本発明の第１の実施例を
示す。本実施例はクラッドにＰＣを用いた導波路型レン
ズである。本実施例では、ＩｎＰコア１の上下左右にＰ
Ｃクラッド２を設け、左側の前端面から半導体レーザの
光を受け、右側の後端面を光ファイバに接続する。本構
造ではクラッドがＰＣであるため、前端面からＩｎＰコ
ア１に入射した光は、入射位置に関わらず、散逸するこ
となくＩｎＰコア１内を伝搬し、すべて後端面から出射
される。FIG. 1 shows a first embodiment of the present invention. This embodiment is a waveguide type lens using a PC as a clad. In the present embodiment, P
The C clad 2 is provided, receives the light of the semiconductor laser from the left front end face, and connects the right rear end face to the optical fiber. In this structure, since the cladding is made of PC, light incident on the InP core 1 from the front end face propagates through the InP core 1 without being dissipated, regardless of the incident position, and is entirely emitted from the rear end face.
【００１１】この時、前端面でＩｎＰコア１の厚さおよ
び幅を３０μm程度に広くしておけば、図２（ａ）に示
すように、レンズを用いなくても半導体レーザ３の出射
光４の大半をＩｎＰコア１に入射させることができる。
また、この時、ＩｎＰコア１の厚さおよび幅が広いの
で、半導体レーザ３の光軸６と本導波路型レンズの光軸
５とがずれても、図２（ｂ）に示すように半導体レーザ
３の出射光４の大半をＩｎＰコア１に入射させることが
できる。さらに、後端面でＩｎＰコア１の厚さおよび幅
を光ファイバのコア径程度にすれば、後端面からの出射
光と光ファイバとの間で高い光結合効率が得られる。At this time, if the thickness and the width of the InP core 1 are increased to about 30 μm at the front end face, as shown in FIG. Can be incident on the InP core 1.
At this time, since the thickness and width of the InP core 1 are large, even if the optical axis 6 of the semiconductor laser 3 and the optical axis 5 of the present waveguide type lens are shifted, as shown in FIG. Most of the emitted light 4 of the laser 3 can be made incident on the InP core 1. Further, when the thickness and width of the InP core 1 at the rear end face are set to be about the core diameter of the optical fiber, high optical coupling efficiency can be obtained between the light emitted from the rear end face and the optical fiber.
【００１２】このように本導波路型レンズを用いれば、
位置合わせ精度が低くても、半導体レーザと光ファイバ
との間で高い光結合効率を得ることができる。また、本
導波路型レンズを光回路と集積すれば、半導体レーザと
光回路との間で容易に高い光結合効率を得ることができ
る。As described above, if the present waveguide type lens is used,
Even if the positioning accuracy is low, high optical coupling efficiency can be obtained between the semiconductor laser and the optical fiber. In addition, if the present waveguide lens is integrated with an optical circuit, high optical coupling efficiency can be easily obtained between the semiconductor laser and the optical circuit.
【００１３】また、コア径の広い導波路の固有モードの
ビーム放射角は狭いので、本発明ではコア径を十分広く
しておけば、コア形状をテーパ状に変化させなくてもレ
ンズ機能を得ることができる。Also, since the beam emission angle of the eigenmode of a waveguide having a large core diameter is narrow, in the present invention, if the core diameter is made sufficiently large, a lens function can be obtained without changing the core shape into a tapered shape. be able to.
【００１４】なお、ＰＣクラッド２は、例えばＩｎＰと
空気からなる格子をウェハー融着法により積層すれば形
成できる。この時、各ウェハーにおいてコアを形成する
部分ではＩｎＰを除去しないように格子の周期を変調す
れば、図１に示すテーパ状のＩｎＰコア１も同時に形成
できる。The PC clad 2 can be formed, for example, by laminating a lattice composed of InP and air by a wafer fusion method. At this time, by modulating the period of the lattice so that InP is not removed from the portion where the core is formed in each wafer, the tapered InP core 1 shown in FIG. 1 can be formed at the same time.
【００１５】また、上記説明ではコア層の材料をＩｎＰ
としたが、空気もしくは絶縁体等の他の材料を用いても
よい。コア層の材料を空気とすれば、この場合もウェハ
ー融着法によりＰＣクラッドおよびコアを同時に作成で
きる。また、ＰＣクラッド２の材料および作成法につい
ても、ＩｎＰおよびウエハー融着法に限定されない。例
えば、バイアススパッタリングによるＳｉおよびＳｉＯ
2の交互成長によりＰＣクラッド２を作成してもよい。In the above description, the material of the core layer is InP.
However, other materials such as air or an insulator may be used. If air is used as the material of the core layer, the PC clad and the core can be formed simultaneously by the wafer fusion method also in this case. Further, the material and the method of forming the PC clad 2 are not limited to the InP and the wafer fusion method. For example, Si and SiO by bias sputtering
The PC clad 2 may be formed by alternate growth of the two.
【００１６】図３に本発明の第２の実施例を示す。本実
施例は、第１の実施例においてＩｎＰコア１の形状を垂
直方向においても対称にしたものである。FIG. 3 shows a second embodiment of the present invention. In this embodiment, the shape of the InP core 1 in the first embodiment is symmetrical also in the vertical direction.
【００１７】図４に、クラッドの一部に金属を用いた導
波路型レンズと光ファイバを集積した本発明の第３の実
施例を示す。本実施例では、通常の光ファイバのＳｉＯ
2コア１１およびＳｉＯ2クラッド１２を、前端面に向け
てテーパ状に広げ、さらにテーパ領域を金属膜１３で覆
う。FIG. 4 shows a third embodiment of the present invention in which a waveguide type lens using a metal for a part of the cladding and an optical fiber are integrated. In this embodiment, the SiO 2 of a normal optical fiber is used.
The two- core 11 and the SiO 2 cladding 12 are tapered toward the front end face, and the tapered region is covered with a metal film 13.
【００１８】本構造の導波路型レンズでは、テーパ領域
のクラッドを金属にすることができるため、前述の実施
例と同様の特徴が得られる。なお、本実施例では、前述
の実施例と異なり、導波路型レンズと光ファイバを接続
する工程は不要となる。本構造において、ＳｉＯ2コア
１１をテーパ状に広げた領域においてＳｉＯ2クラッド
１２を除去し、金属膜１３がＳｉＯ2コア１１を直接覆
うようにしてもよい。また、金属膜１３の代わりにＰＣ
を用いてもよい。In the waveguide type lens of the present structure, the cladding in the tapered region can be made of metal, so that the same features as those of the above-described embodiment can be obtained. Note that, in the present embodiment, unlike the above-described embodiment, the step of connecting the waveguide type lens and the optical fiber becomes unnecessary. In this structure, the SiO 2 core 11 to remove the SiO 2 cladding 12 in a region spread tapered, the metal film 13 may be covered with SiO 2 core 11 directly. Also, instead of the metal film 13, a PC
May be used.
【００１９】本発明は、コア層、金属およびＰＣの組成
および材料に関わらず有効であり、上記実施例で説明し
た場合に制限されない。The present invention is effective irrespective of the composition and material of the core layer, metal and PC, and is not limited to the case described in the above embodiment.
【００２０】[0020]
【発明の効果】本発明の導波路型レンズを用いれば、組
み立て工程が簡単になるため光モジュールの低価格化が
可能となる。また、半導体レーザを良好な特性のまま用
いることができるため、光通信および光情報処理システ
ム全体の温度特性、変調特性、消費電力特性、信頼性等
が向上する。By using the waveguide type lens of the present invention, the assembling process is simplified, so that the cost of the optical module can be reduced. In addition, since the semiconductor laser can be used with good characteristics, the temperature characteristics, modulation characteristics, power consumption characteristics, reliability, and the like of the entire optical communication and optical information processing system are improved.
【図１】本発明による第１の実施例を示す光導波路の斜
視図。FIG. 1 is a perspective view of an optical waveguide showing a first embodiment according to the present invention.
【図２】本発明による第１の実施例の効果を示す光導波
路の側断面図。FIG. 2 is a side sectional view of an optical waveguide showing an effect of the first embodiment according to the present invention.
【図３】本発明による第２の実施例を示す光導波路の斜
視図。FIG. 3 is a perspective view of an optical waveguide showing a second embodiment according to the present invention.
【図４】本発明による第３の実施例を示す光導波路の斜
視図。FIG. 4 is a perspective view of an optical waveguide showing a third embodiment according to the present invention.
１…ＩｎＰコア、２…ＰＣクラッド、３…半導体レー
ザ、４…半導体レーザの出射光、５…導波路型レンズの
光軸、６…半導体レーザの光軸、１１…ＳｉＯ2コア、
１２…ＳｉＯ2クラッド、１３…金属膜。1 ... InP core, 2 ... PC cladding, 3 ... semiconductor laser, 4 ... semiconductor laser emitting light, 5 ... optical axis of the waveguide lens, the optical axis of 6 ... semiconductor laser, 11 ... SiO 2 core,
12: SiO 2 clad, 13: metal film.
Claims (14)
なるように形状が光軸方向の少なくとも一部でテーパ状
に変化するコアを有し、光軸方向の少なくとも一部にお
いて、クラッド層またはクラッド層の外側の層が、フォ
トニッククリスタルまたは金属であることを特徴とする
光導波路。1. A core having a shape that changes in a tapered shape in at least a part of the optical axis direction so that a cross-sectional area in a direction perpendicular to the optical axis is different at both end faces. An optical waveguide, wherein the cladding layer or a layer outside the cladding layer is a photonic crystal or a metal.
では、クラッド層もしくはクラッド層の外側の層がフォ
トニッククリスタルまたは金属であることを特徴とする
請求項１記載の光導波路。2. The optical waveguide according to claim 1, wherein the cladding layer or a layer outside the cladding layer is made of a photonic crystal or a metal at least at an end face having a larger cross-sectional area of the core.
幅もしくは厚さもしくは径が少なくとも３０μm以上あ
ることを特徴とする請求項１または請求項２記載の光導
波路。3. The optical waveguide according to claim 1, wherein a width, a thickness, or a diameter of the core at an end face having a larger sectional area of the core is at least 30 μm or more.
幅もしくは厚さもしくは径が、光ファイバと同等である
ことを特徴とする請求項１ないし請求項３のいずれか記
載の光導波路。4. The light guide according to claim 1, wherein the width, thickness, or diameter of the core at the end face having the smaller cross-sectional area of the core is equal to that of the optical fiber. Wave path.
バもしくは他の導波路と光軸方向に集積することを特徴
とする請求項１ないし請求項４のいずれか記載の光導波
路。5. An optical waveguide according to claim 1, wherein the optical waveguide is integrated with an optical fiber or another waveguide in an optical axis direction at an end face having a smaller sectional area of the core.
で形成されることを特徴とする請求項１ないし請求項５
のいずれか記載の光導波路。6. The semiconductor device according to claim 1, wherein the core is made of a semiconductor, an insulator, or air.
An optical waveguide according to any one of the above.
さもしくは径が少なくとも３０μm以上あり、光軸方向
の少なくとも一部において、クラッド層またはクラッド
層の外側の層がフォトニッククリスタルまたは金属であ
ることを特徴とする光導波路。7. The core has a width, thickness or diameter of at least 30 μm or more in a direction perpendicular to the optical axis, and in at least a part of the optical axis direction, the cladding layer or a layer outside the cladding layer is a photonic crystal or An optical waveguide characterized by being a metal.
はクラッド層の外側の層がフォトニッククリスタルまた
は金属であることを特徴とする請求項７記載の光導波
路。8. The optical waveguide according to claim 7, wherein at least one end face of the cladding layer or a layer outside the cladding layer is made of a photonic crystal or metal.
光導波路の、コアの断面積が大きい方の端面に、光源か
らの光が入射するように組み立てられていることを特徴
とする光モジュール。9. The optical waveguide according to any one of claims 1 to 6, wherein the optical waveguide is assembled so that light from a light source is incident on an end face having a larger cross-sectional area of a core. Optical module.
からの光が入射するように組み立てられていることを特
徴とする光モジュール。10. An optical module characterized in that it is assembled so that light from a light source is incident on the core of the optical waveguide according to claim 7.
たはクラッド層の外側の層がフォトニッククリスタルま
たは金属である方の端面に光源からの光が入射するよう
に組み立てられていることを特徴とする光モジュール。11. The optical waveguide according to claim 8, wherein the cladding layer or the outer layer of the cladding layer is assembled so that light from a light source is incident on an end face of the optical waveguide which is a photonic crystal or metal. Optical module.
する請求項９ないし請求項１１のいずれか記載の光モジ
ュール。12. The optical module according to claim 9, wherein the light source is a semiconductor laser.
の光導波路を少なくとも一個、もしくは、請求項９ない
し請求項１２のいずれか記載の光モジュールを少なくと
も一個用いて形成したことを特徴とする光通信システム13. An optical waveguide formed by using at least one optical waveguide according to any one of claims 1 to 8 or at least one optical module according to any one of claims 9 to 12. Optical communication system
の光導波路を少なくとも一個、もしくは、請求項９ない
し請求項１２のいずれか記載の光モジュールを少なくと
も一個用いて形成したことを特徴とする光情報処理シス
テム。14. An optical waveguide formed by using at least one optical waveguide according to any one of claims 1 to 8, or at least one optical module according to any one of claims 9 to 12. Optical information processing system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11175056A JP2001004877A (en) | 1999-06-22 | 1999-06-22 | Optical waveguide, optical module and optical system |
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| Application Number | Priority Date | Filing Date | Title |
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| JP11175056A JP2001004877A (en) | 1999-06-22 | 1999-06-22 | Optical waveguide, optical module and optical system |
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| JP2001004877A true JP2001004877A (en) | 2001-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP11175056A Pending JP2001004877A (en) | 1999-06-22 | 1999-06-22 | Optical waveguide, optical module and optical system |
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| JP (1) | JP2001004877A (en) |
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