JP2000357827A - Magnetic resistance element - Google Patents
Magnetic resistance elementInfo
- Publication number
- JP2000357827A JP2000357827A JP2000107612A JP2000107612A JP2000357827A JP 2000357827 A JP2000357827 A JP 2000357827A JP 2000107612 A JP2000107612 A JP 2000107612A JP 2000107612 A JP2000107612 A JP 2000107612A JP 2000357827 A JP2000357827 A JP 2000357827A
- Authority
- JP
- Japan
- Prior art keywords
- wiring pattern
- magnetic sensing
- temperature compensating
- temperature
- magnetoresistive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 90
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 10
- 238000001514 detection method Methods 0.000 abstract description 12
- 230000007261 regionalization Effects 0.000 abstract description 2
- 230000007935 neutral effect Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 description 11
- 239000003302 ferromagnetic material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910018106 Ni—C Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 width Substances 0.000 description 1
Landscapes
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気ドラム等の位
置を検出する磁気センサー等に使用される磁気抵抗素子
に関し、更に詳しくは、通電時における磁気抵抗素子の
感磁部と温度補償部間の中点電圧を一定に保持するため
の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element used for a magnetic sensor or the like for detecting a position of a magnetic drum or the like, and more particularly, between a magnetic sensing portion and a temperature compensating portion of a magnetoresistive element when energized. For maintaining the midpoint voltage constant.
【０００２】[0002]
【従来の技術】磁気抵抗素子は、強磁性体の異方性磁気
抵抗が電流と磁力線とが平行になった時に抵抗値が最大
になり、直交した時に最少となるという強磁性体の異方
性磁気抵抗効果を利用して検出信号を生成するものであ
る。このような素子は、例えば、特許第２５８９４５７
号公報に開示されている。この公報に開示の磁気抵抗素
子は、図４に示すように、駆動電圧Ｖｃｃに接続される
電極４２と、接地される電極４６と、温度補償部４３
と、感磁部４５と、温度補償部４３および感磁部４５を
相互に接続している配線部４４から構成されている。2. Description of the Related Art A magnetoresistive element is an anisotropic ferromagnetic material in which the anisotropic magnetoresistance of a ferromagnetic material has a maximum value when current and magnetic lines of force are parallel, and has a minimum value when crossed orthogonally. The detection signal is generated using the magneto-resistance effect. Such an element is disclosed, for example, in Japanese Patent No. 2589457.
No. 6,009,045. As shown in FIG. 4, the magnetoresistive element disclosed in this publication includes an electrode 42 connected to the drive voltage Vcc, an electrode 46 grounded, and a temperature compensator 43.
, A magnetic sensing part 45, and a wiring part 44 interconnecting the temperature compensating part 43 and the magnetic sensing part 45.
【０００３】磁気抵抗素子４１の感磁部４５および温度
補償部４３の配線パターンは同一強磁性体薄膜から形成
されており、感磁部４５の配線パターンは、上下方向に
つづら折れ状とされ、磁気抵抗素子４１の温度補償部４
３の配線パターンは、直交する方向、すなわち、左右方
向につづら折れ状とされている。The wiring patterns of the magnetic sensing part 45 and the temperature compensating part 43 of the magnetoresistive element 41 are formed of the same ferromagnetic thin film, and the wiring pattern of the magnetic sensing part 45 is bent in the vertical direction. Temperature compensator 4 of magnetoresistive element 41
The wiring pattern No. 3 is bent in a direction perpendicular to the wiring pattern, that is, in the left-right direction.
【０００４】この構成の磁気抵抗素子では、一般に、そ
の感磁面において感磁部の配線パターンを温度補償部の
配線パターンに比べてその形成領域を広くすることによ
り、検出感度を高めている。In the magnetoresistive element having this configuration, the detection sensitivity is generally increased by making the wiring pattern of the magnetosensitive part on the magnetosensitive surface wider than the wiring pattern of the temperature compensation part.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、感磁部
および温度補償部の配線パターンの形成領域が相互に異
なっていると、すなわち、その形状あるいは面積が相違
していると、それらの間の発熱量および熱拡散量も異な
ったものとなる。この結果、通電時におけるそれぞれの
熱収支（単位面積当たりの発熱量と熱拡散量の差）が違
ってくる。However, if the formation regions of the wiring patterns of the magnetic sensing part and the temperature compensation part are different from each other, that is, if their shapes or areas are different, heat is generated between them. The amount and the amount of thermal diffusion will also be different. As a result, each heat balance (difference between the amount of heat generated per unit area and the amount of heat diffusion) during energization differs.
【０００６】よって、感磁部と温度補償部を通る電流の
大きさにより、各部の温度差が生じて内部抵抗に差が生
じ、感磁部と温度補償部との間の中点電位が変動してし
まう。通電時の発熱により感磁部と温度補償部間の中点
電位が変動すると、その変動量が、磁力線の方向の変化
による感磁部と温度補償部間の電圧変化量に加算され、
精度のよい検出動作が保証されなくなってしまう。Therefore, the magnitude of the current passing through the magnetic sensing part and the temperature compensating part causes a temperature difference between the parts, causing a difference in the internal resistance, and the midpoint potential between the magnetic sensing part and the temperature compensating part fluctuating. Resulting in. When the midpoint potential between the magnetic sensing part and the temperature compensating part fluctuates due to heat generated during energization, the amount of the fluctuation is added to the amount of voltage change between the magnetic sensing part and the temperature compensating part due to a change in the direction of the line of magnetic force,
Accurate detection operation cannot be guaranteed.
【０００７】本発明の課題は、この点に鑑みて、検出動
作中において感磁部と温度補償部の中点電位が変動する
ことのない磁気抵抗素子を提案することにある。In view of the above, an object of the present invention is to propose a magnetoresistive element in which the midpoint potential of the magnetic sensing unit and the temperature compensating unit does not fluctuate during the detecting operation.
【０００８】[0008]
【課題を解決するための手段】上記の課題を解決するた
めに、本発明は、強磁性体薄膜の配線パターンからなる
感磁部と、強磁性体薄膜の配線パターンからなる温度補
償部と、これらを相互に接続している配線部とを有する
磁気抵抗素子において、前記感磁部および前記温度補償
部のそれぞれにおける配線パターンの通電時の熱収支が
同一となるようにしたことを特徴としている。In order to solve the above-mentioned problems, the present invention provides a magnetic sensing part comprising a wiring pattern of a ferromagnetic thin film, a temperature compensating part comprising a wiring pattern of a ferromagnetic thin film, In a magnetoresistive element having a wiring portion interconnecting them, a heat balance at the time of energization of the wiring pattern in each of the magnetic sensing portion and the temperature compensating portion is the same. .
【０００９】これら感磁部および温度補償部の熱収支を
同一とするための典型的な構成は、前記感磁部の配線パ
ターンと前記温度補償部の配線パターンを、材質、膜
厚、幅、長さが同一の配線から形成すると共に、これら
の配線パターンの形成領域も同一形状（従って、同一面
積）とすることである。A typical configuration for equalizing the heat balance of the magnetic sensing part and the temperature compensating part is that the wiring pattern of the magnetic sensing part and the wiring pattern of the temperature compensating part are formed of a material, a film thickness, a width, In addition to forming the wirings from the same length, the formation regions of these wiring patterns have the same shape (accordingly, the same area).
【００１０】望ましい形態は、前記感磁部の配線パター
ンの形成領域の形状と、前記温度補償部の配線パターン
の形成領域の形状とを、駆動電圧側電極（Ｖｃｃ）と接
地電極（ＧＮＤ）の中間線に対して対称とすることであ
る。In a desirable mode, the shape of the wiring pattern forming area of the magneto-sensitive section and the shape of the wiring pattern forming area of the temperature compensating section are determined by changing the drive voltage side electrode (Vcc) and the ground electrode (GND). That is, it is symmetric with respect to the intermediate line.
【００１１】次に感磁部および温度補償部の熱収支を同
一とするために、配線パターンの形成領域の形状が同一
ならば、前記感磁部の配線パターンと前記温度補償部の
配線パターンの幅、長さが異なる配線としてもよい。つ
まり、感磁部は検出感度を高めるために温度補償部より
パターンの幅を広くする。温度補償部は、感磁部よりパ
ターンの幅を狭くし、また、長さを長く調整することで
感磁部と内部抵抗を同一とする。感磁部の配線パターン
と温度補償部の配線パターンは、折り返しでのパターン
間のギャップを感磁部は狭く、温度補償部は広く形成す
ることにより形成領域を同一形状とすることで、熱収支
を同一とすることができる。Next, in order to make the heat balance of the magnetic sensing portion and the temperature compensating portion the same, if the shapes of the wiring pattern forming regions are the same, the wiring pattern of the magnetic sensing portion and the wiring pattern of the temperature compensating portion are formed. Wirings having different widths and lengths may be used. That is, the width of the pattern of the magnetic sensing unit is made wider than that of the temperature compensating unit in order to increase the detection sensitivity. The temperature compensating unit makes the width of the pattern narrower than that of the magnetic sensing unit and adjusts the length to be longer so that the internal resistance of the magnetic sensing unit is the same as that of the magnetic sensing unit. The wiring pattern of the magnetic sensing part and the wiring pattern of the temperature compensating part have a narrow gap between the folded patterns in the magnetic sensing part and a wide temperature compensating part. Can be the same.
【００１２】さらに、感磁部および温度補償部の熱収支
を同一とするためには、前記感磁部の配線パターンと前
記温度補償部の配線パターンを、材質、膜厚、幅、長さ
のうちの少なくとも二つの要素が相互に異なる配線から
形成してもよい。Further, in order to make the heat balance of the magnetic sensing portion and the temperature compensating portion the same, the wiring pattern of the magnetic sensing portion and the wiring pattern of the temperature compensating portion are made of different materials, film thickness, width and length. At least two of the elements may be formed from mutually different wirings.
【００１３】この構成の代わりに、あるいはこの構成に
加えて、前記感磁部の配線パターンと前記温度補償部の
配線パターンを、材質、膜厚、幅、長さのうち少なくと
も一つの要素が相互に異なっている配線から形成すると
共に、前記感磁部と前記温度補償部の配線パターンの形
成領域を、それらの形状あるいは面積が相違するものと
してもよい。Instead of or in addition to this configuration, the wiring pattern of the magneto-sensitive section and the wiring pattern of the temperature compensating section may be made of at least one of material, film thickness, width and length. And the wiring patterns of the magnetic sensing part and the temperature compensation part may have different shapes or areas.
【００１４】本発明の磁気抵抗素子においては、通電時
における感磁部と温度補償部のそれそれの熱収支（単位
面積当たりの発熱量と熱拡散量の差）が等しい。従っ
て、感磁部と温度補償部の配線パターンの加熱状態が相
違することに起因してそれらの内部抵抗が変動してしま
うことを回避できる。よって、これらの間の中点電位を
常に一定に保持することができるので、精度の良い検出
動作が保証される。In the magnetoresistive element of the present invention, the heat balance (the difference between the amount of heat generated per unit area and the amount of heat diffusion) of the magnetosensitive portion and that of the temperature compensator during energization are equal. Therefore, it is possible to prevent the internal resistance of the magnetic sensing unit and the temperature compensation unit from fluctuating due to different heating states of the wiring patterns. Therefore, the midpoint potential between them can always be kept constant, and a highly accurate detection operation is guaranteed.
【００１５】[0015]
【発明の実施の形態】以下に、図面を参照して、本発明
を適用した磁気抵抗素子について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A magnetoresistive element to which the present invention is applied will be described below with reference to the drawings.
【００１６】（第１の実施例）図１は本発明の第１の実
施例に係る磁気抵抗素子の感磁面に形成された感磁部と
温度補償部の配線パターンを示す説明図である。磁気抵
抗素子１１の感磁面には、感磁部１２と温度補償部１３
が形成されており、感磁部１２は、強磁性体薄膜を図面
上下方向に等しい間隔でつづら折れ状に引き回した配線
パターンからなっている。温度補償部１３は、強磁性体
薄膜を図面左右方向に等しい間隔でつづら折れ状に引き
回した配線パターンからなっている。(First Embodiment) FIG. 1 is an explanatory view showing a wiring pattern of a magnetic sensing portion and a temperature compensating portion formed on a magnetic sensing surface of a magnetoresistive element according to a first embodiment of the present invention. . A magnetic sensing part 12 and a temperature compensating part 13 are provided on a magnetic sensing surface of the magnetoresistive element 11.
The magnetic sensing part 12 is formed of a wiring pattern in which a ferromagnetic thin film is drawn in a zigzag manner at equal intervals in the vertical direction in the drawing. The temperature compensator 13 is formed of a wiring pattern in which a ferromagnetic thin film is drawn in a zigzag manner at equal intervals in the horizontal direction of the drawing.
【００１７】感磁部１２および温度補償部１３は配線部
１６を介して相互に接続されている。感磁部１２は電極
１５を介して接地側に接続され、温度補償部１３は電極
１４を介して駆動電圧Ｖｃｃの側に接続される。The magnetic sensing part 12 and the temperature compensating part 13 are connected to each other via a wiring part 16. The magnetic sensing unit 12 is connected to the ground side via an electrode 15, and the temperature compensating unit 13 is connected to the driving voltage Vcc side via an electrode 14.
【００１８】ここで、本例では、感磁部１２および温度
補償部１３の配線パターンを構成している強磁性体薄膜
は同一の材質であり、膜厚、線幅、長さも同一とされて
いる。また、感磁部１２および温度補償部１３の配線パ
ターンの形成領域の形状が同一とされている（従って、
双方が同一面積とされている。）。すなわち、駆動電圧
側電極１４と接地電極１５の中間線、換言すると、これ
らの電極を結ぶ直線の垂直２等分線に対して、感磁部１
２および温度補償部１３の配線パターンの形成領域の形
状が対称とされている。In this embodiment, the ferromagnetic thin films forming the wiring patterns of the magnetic sensing part 12 and the temperature compensating part 13 are made of the same material, and have the same film thickness, line width and length. I have. Further, the shapes of the wiring pattern forming regions of the magnetic sensing portion 12 and the temperature compensating portion 13 are the same (accordingly,
Both have the same area. ). In other words, the magnetic sensing unit 1 is positioned with respect to an intermediate line between the drive voltage side electrode 14 and the ground electrode 15, in other words, a perpendicular bisector of a straight line connecting these electrodes.
2 and the shape of the wiring pattern forming region of the temperature compensator 13 are symmetrical.
【００１９】このように構成した本例の磁気抵抗素子１
１では、感磁部１２における単位面積当たりの発熱量と
熱拡散量の差と、温度補償部１３における単位面積当た
りの発熱量と熱拡散量の差が等しいので、通電時に温度
変化も同一である。また、同一材質、同一厚さおよび幅
の配線からなるので、温度変化に伴う内部抵抗変化も同
一である。従って、通電時における双方の中間電位が一
定に保持される。The magnetoresistive element 1 according to the present embodiment thus constructed
In No. 1, since the difference between the heat generation amount per unit area and the heat diffusion amount in the magnetic sensing unit 12 and the difference between the heat generation amount per unit area and the heat diffusion amount in the temperature compensation unit 13 are equal, the temperature change during energization is the same. is there. Further, since the wiring is made of the same material, the same thickness and the same width, the change of the internal resistance with the temperature change is also the same. Therefore, both intermediate potentials at the time of energization are kept constant.
【００２０】よって、感磁部１２と温度補償部１３の間
の電圧変化は磁力線の方向にのみ依存し、熱による電圧
変化が生じず、検出精度の低下を招くことがない。Therefore, the voltage change between the magnetic sensing unit 12 and the temperature compensating unit 13 depends only on the direction of the line of magnetic force, the voltage does not change due to heat, and the detection accuracy does not decrease.
【００２１】なお、配線パターンの形成領域の形状が同
一ならば、感磁部１２の配線パターンと温度補償部１３
の配線パターンの幅、長さが異なる配線としてもよい。
つまり、感磁部１２は感度を得るために温度補償部１３
よりパターンの幅を広くする。温度補償部１３は、感磁
部１２よりパターンの幅を狭くし、また、長さを長く調
整することで感磁部１２と内部抵抗を同一とする。感磁
部１２の配線パターンと温度補償部１３の配線パターン
は、折り返しでのパターン間のギャップを感磁部１２は
狭く、温度補償部１３は広く形成することにより形成領
域を同一形状とすることで、熱収支を同一とすることが
できる。If the shape of the wiring pattern forming region is the same, the wiring pattern of the magnetic sensing unit 12 and the temperature compensating unit 13
May have different widths and lengths.
That is, the magnetic sensing unit 12 is used to obtain the sensitivity by the temperature compensation unit 13.
Make the pattern wider. The temperature compensating section 13 makes the width of the pattern narrower than the magnetic sensing section 12 and adjusts the length to be longer so that the internal resistance is the same as that of the magnetic sensing section 12. The wiring pattern of the magnetic sensing part 12 and the wiring pattern of the temperature compensating part 13 are formed so that the gap between the folded patterns is narrow in the magnetic sensing part 12 and wide in the temperature compensating part 13 so that the formation regions have the same shape. Thus, the heat balance can be made the same.
【００２２】（第１の実施例の変形例）上記の本例の実
施例において、感磁部１２および温度補償部１３の配線
パターンの形成領域の形状は長方形で説明したが、円形
状、三角形状等形状は自由である。以下に、感磁部１２
および温度補償部１３の配線パターンの形成領域の形状
が五角形状の磁気抵抗素子について説明する。(Modification of First Embodiment) In the above-described embodiment of the present embodiment, the shapes of the wiring pattern forming regions of the magnetic sensing portion 12 and the temperature compensating portion 13 have been described as rectangular. The shape such as the shape is free. Below, the magnetic sensing part 12
A description will be given of a magnetoresistive element having a pentagonal shape in a wiring pattern forming region of the temperature compensating unit 13.
【００２３】図２は本発明の第１の実施例の変形例に係
る磁気抵抗素子の感磁面に形成された感磁部と温度補償
部の配線パターンを示す説明図である。磁気抵抗素子１
１の感磁面には、感磁部１２と温度補償部１３が形成さ
れており、感磁部１２は、強磁性体薄膜を図面上下方向
につづら折れ状に引き回した配線パターンからなってい
る。温度補償部１３は、強磁性体薄膜を図面左右方向に
つづら折れ状に引き回した配線パターンからなってい
る。FIG. 2 is an explanatory diagram showing a wiring pattern of a magnetic sensing part and a temperature compensating part formed on a magnetic sensing surface of a magnetoresistive element according to a modification of the first embodiment of the present invention. Magnetic resistance element 1
A magneto-sensitive portion 12 and a temperature compensating portion 13 are formed on the magneto-sensitive surface 1. The magneto-sensitive portion 12 is formed of a wiring pattern in which a ferromagnetic thin film is wound in a vertical direction in the drawing. . The temperature compensator 13 is formed of a wiring pattern in which a ferromagnetic thin film is drawn in a zigzag manner in the horizontal direction of the drawing.
【００２４】感磁部１２および温度補償部１３は配線部
１６を介して相互に接続されている。感磁部１２は電極
１５を介して接地側に接続され、温度補償部１３は電極
１４を介して駆動電圧Ｖｃｃの側に接続される。The magnetic sensing part 12 and the temperature compensating part 13 are connected to each other via a wiring part 16. The magnetic sensing unit 12 is connected to the ground side via an electrode 15, and the temperature compensating unit 13 is connected to the driving voltage Vcc side via an electrode 14.
【００２５】ここで、本例でも、感磁部１２および温度
補償部１３の配線パターンを構成している強磁性体薄膜
は同一の材質であり、膜厚、線幅、長さも同一とされて
いる。また、本例では、感磁部１２および温度補償部１
３の配線パターンの形成領域は五角形状であり、形状が
同一とされている（従って、双方が同一面積とされてい
る。）。すなわち、駆動電圧側電極１４と接地電極１５
の中間線、換言すると、これらの電極を結ぶ直線の垂直
２等分線に対して、感磁部１２および温度補償部１３の
配線パターンの形成領域の形状が対称とされている。更
に、感磁部１２と温度補償部１３とはその形成方向が直
交方向となっているので、磁石の回転に応じて感磁部１
２と温度補償部１３とは入れ替わりながら検出動作をお
こなうことができる。Here, also in this example, the ferromagnetic thin films forming the wiring patterns of the magnetic sensing part 12 and the temperature compensating part 13 are made of the same material, and have the same film thickness, line width and length. I have. In this example, the magnetic sensing unit 12 and the temperature compensating unit 1
The formation region of the third wiring pattern has a pentagonal shape and the same shape (therefore, both have the same area). That is, the drive voltage side electrode 14 and the ground electrode 15
In other words, the shape of the region where the wiring pattern of the magnetic sensing portion 12 and the temperature compensating portion 13 is formed is symmetrical with respect to the middle line of the above, in other words, the perpendicular bisector of a straight line connecting these electrodes. Further, since the magnetic sensing part 12 and the temperature compensating part 13 are formed in a direction orthogonal to each other, the magnetic sensing part 1 and the temperature compensating part 13 are rotated in accordance with the rotation of the magnet.
2 and the temperature compensating unit 13 can perform the detecting operation while being interchanged.
【００２６】このように構成した本例の磁気抵抗素子１
１においても、たとえば、下側が感磁部の場合、感磁部
１２における単位面積当たりの発熱量と熱拡散量の差
と、温度補償部１３における単位面積当たりの発熱量と
熱拡散量の差が等しいので、通電時に温度変化も同一で
ある。また、同一材質、同一厚さおよび幅の配線からな
るので、温度変化に伴う内部抵抗変化も同一である。従
って、通電時における双方の中間電位が一定に保持さ
れ、また、感磁部１２と温度補償部１３が入れ替わって
も一定に保持することができる。The magnetoresistive element 1 of the present embodiment thus constructed
1, the difference between the amount of heat generated per unit area and the amount of heat diffusion in the magneto-sensitive portion 12 and the difference between the amount of heat generated and the amount of heat diffusion in the temperature compensator 13 when the lower side is a magnetically sensitive portion. Are equal, the temperature change during energization is also the same. Further, since the wires are made of the same material, the same thickness and the same width, the change in internal resistance due to the temperature change is also the same. Therefore, both intermediate potentials at the time of energization are kept constant, and can be kept constant even when the magnetic sensing unit 12 and the temperature compensating unit 13 are switched.
【００２７】よって、感磁部１２と温度補償部１３の間
の電圧変化は磁力線の方向にのみ依存し、熱による電圧
変化が生じず、検出精度の低下を招くことがない。Therefore, the voltage change between the magnetic sensing unit 12 and the temperature compensating unit 13 depends only on the direction of the line of magnetic force, the voltage does not change due to heat, and the detection accuracy does not decrease.
【００２８】（第２の実施例）図３は本発明の第２の実
施例に係る磁気抵抗素子の感磁面に形成された感磁部と
温度補償部の配線パターンを示す説明図である。(Second Embodiment) FIG. 3 is an explanatory view showing a wiring pattern of a magnetic sensing portion and a temperature compensating portion formed on a magnetic sensing surface of a magnetoresistive element according to a second embodiment of the present invention. .
【００２９】本例の磁気抵抗素子２１の感磁部２２も、
強磁性体薄膜を図面の上下方向に等しい間隔でつづら折
れ状に引き回した配線パターンからなり、温度補償部２
３も同様に、強磁性体薄膜を図面の左右方向に等しい間
隔でつづら折れ状に引き回した配線パターンからなって
いる。The magnetic sensing part 22 of the magnetoresistive element 21 of the present embodiment also
The temperature compensator 2 is formed of a wiring pattern in which a ferromagnetic thin film is drawn in a zigzag pattern at equal intervals in the vertical direction of the drawing.
Similarly, the wiring pattern 3 is formed of a wiring pattern in which the ferromagnetic thin film is drawn in a zigzag manner at equal intervals in the horizontal direction of the drawing.
【００３０】本例では、感磁部２１と温度補償部２３の
配線は、それらの幅、厚さは同一であるが、材質が異な
っている。すなわち、温度補償部２３の強磁性体には、
単位面積当たりの発熱量と熱拡散量の差が大きいＮｉ−
Ｃｏが使用され、感磁部２２の強磁性体には、単位面積
当たりの発熱量と熱拡散量の差が小さいＮｉ−Ｆｅが使
用される。In this embodiment, the wiring of the magnetic sensing part 21 and the wiring of the temperature compensating part 23 have the same width and thickness, but different materials. That is, the ferromagnetic material of the temperature compensation unit 23 includes:
Ni- which has a large difference between the amount of heat generated per unit area and the amount of heat diffusion
Co is used, and Ni—Fe having a small difference between the heat generation amount and the heat diffusion amount per unit area is used as the ferromagnetic material of the magnetic sensing part 22.
【００３１】そのため、感磁部２２の強磁性体薄膜の配
線パターンの形成領域の形状を広幅の長方形とし、温度
補償部２３の配線パターンの形成領域の形状を狭幅の長
方形とし、これにより、双方の熱収差を等しくしてあ
る。For this reason, the shape of the wiring pattern forming region of the ferromagnetic thin film of the magneto-sensitive portion 22 is made a wide rectangular shape, and the shape of the wiring pattern forming region of the temperature compensating portion 23 is made a narrow rectangular shape. Both thermal aberrations are made equal.
【００３２】この結果、通電時における感磁部２２の温
度変化と、温度補償部２３の温度変化が等しくなる。従
って、通電時において感磁部２２と温度補償部２３の間
を繋ぐ配線部２６に現れる中間電位は変動せずに一定の
保持される。よって、磁気抵抗素子２１の検出精度が良
好な状態に保持される。As a result, the temperature change of the magnetic sensing part 22 and the temperature change of the temperature compensating part 23 during energization become equal. Therefore, the intermediate potential appearing in the wiring section 26 connecting the magnetic sensing section 22 and the temperature compensating section 23 at the time of energization is kept constant without fluctuating. Therefore, the detection accuracy of the magnetoresistive element 21 is maintained in a good state.
【００３３】なお、強磁性体に用いる物質は、Ｎｉ−Ｃ
ｏ、Ｎｉ−Ｆｅに限定されるものではない。異なる材質
を採用した場合には、それらの熱収支が等しくなるよう
に、配線パターンの表面積、パターン輪郭形状等を適宜
変更すればよい。The material used for the ferromagnetic material is Ni-C
It is not limited to o and Ni-Fe. When different materials are used, the surface area of the wiring pattern, the pattern contour shape, and the like may be appropriately changed so that their heat balances become equal.
【００３４】（第２の実施例の変形例）ここで、上記の
磁気抵抗素子の感磁部と温度補償部の熱収差を等しくす
るためには、例えば次のようにしてもよい。(Modification of the Second Embodiment) Here, in order to equalize the thermal aberration of the magnetic sensing part of the magnetoresistive element and the thermal aberration of the temperature compensating part, for example, the following may be performed.
【００３５】すなわち、感磁部と温度補償部の配線の材
質、線幅を同一とし、それらの配線の膜厚を異なったも
のとしてもよい。例えば、温度補償部の強磁性体の膜厚
を薄くし、単位面積当たりの熱拡散量を小さくする。逆
に、感磁部の強磁性体の膜厚を温度補償部の強磁性体の
膜厚に比べて厚くし、単位面積当たりの熱拡散量を大き
くする。That is, the material and the line width of the wiring of the magnetic sensing part and the temperature compensating part may be the same, and the thicknesses of the wirings may be different. For example, the film thickness of the ferromagnetic material of the temperature compensation unit is reduced, and the amount of heat diffusion per unit area is reduced. Conversely, the thickness of the ferromagnetic material in the magneto-sensitive portion is made thicker than the thickness of the ferromagnetic material in the temperature compensating portion, and the amount of heat diffusion per unit area is increased.
【００３６】双方の配線パターン形成領域の形状は、図
３に示す場合と同様に、感磁部側の配線パターンの形成
領域を広い長方形とし、他方の温度補償部の方を狭い長
方形とする。As in the case shown in FIG. 3, the shape of the wiring pattern forming regions is such that the wiring pattern forming region on the magneto-sensitive portion side is a wide rectangle and the other temperature compensating portion is a narrow rectangle.
【００３７】この構成によっても、双方の部分の膜厚、
双方の配線パターン形成領域の形状および面積を調整す
ることにより、双方の部分の熱収支を等しくできる。こ
れにより、通電による感磁部と温度補償部の温度変化を
等しくできるので、通電時における感磁部および温度補
償部の中間電位を一定に保持でき、精度の良い検出が保
証される。According to this configuration, the film thickness of both portions can be improved.
By adjusting the shape and area of both wiring pattern formation regions, the heat balance of both portions can be made equal. Thereby, the temperature change of the magnetic sensing unit and the temperature compensating unit due to energization can be made equal, so that the intermediate potential between the magnetic sensing unit and the temperature compensating unit during energization can be kept constant, and accurate detection is guaranteed.
【００３８】なお、温度補償部の強磁性体の膜厚を厚く
し、感磁部と温度補償部の配線パターン形成領域の面積
差をより大きくする等して、双方の部分の熱収支を等し
くすることも可能である。It is to be noted that the thickness of the ferromagnetic material in the temperature compensating portion is increased, and the difference between the areas of the magnetic sensing portion and the wiring pattern forming region in the temperature compensating portion is increased, so that the heat balance of both portions is equalized. It is also possible.
【００３９】[0039]
【発明の効果】以上説明したように、本発明の磁気抵抗
素子においては、感磁部と温度補償部の強磁性体薄膜の
材質、幅、膜厚、長さ、並びに、それらの部分の配線パ
ターン形成領域の輪郭形状や面積を調整することにによ
り、双方の部分の熱収支を等しくしている。As described above, in the magnetoresistive element of the present invention, the material, width, film thickness, and length of the ferromagnetic thin film of the magnetic sensing portion and the temperature compensating portion, and the wiring of those portions. By adjusting the contour shape and area of the pattern forming region, the heat balance of both portions is made equal.
【００４０】従って、本発明によれば、動作時に、双方
の部分の加熱状態の相違に起因して内部抵抗が変動し
て、それらの中点電位が変動してしまうことを回避でき
る。よって、精度の良い検出動作を保証することができ
る。Therefore, according to the present invention, it is possible to prevent the internal resistance from fluctuating due to the difference between the heating states of the two parts during operation, thereby fluctuating the midpoint potential. Therefore, a highly accurate detection operation can be guaranteed.
【図１】本発明の第１の実施例に係る磁気抵抗素子にお
ける感磁部および温度補償部の配線パターンを示す説明
図である。FIG. 1 is an explanatory diagram showing a wiring pattern of a magnetic sensing part and a temperature compensating part in a magnetoresistive element according to a first example of the present invention.
【図２】本発明の第１の実施例の変形例に係る磁気抵抗
素子における感磁部および温度補償部の配線パターンを
示す説明図である。FIG. 2 is an explanatory diagram showing a wiring pattern of a magnetic sensing part and a temperature compensating part in a magnetoresistive element according to a modification of the first embodiment of the present invention.
【図３】本発明の第２の実施例に係る磁気抵抗素子にお
ける感磁部および温度補償部の配線パターンを示す説明
図である。FIG. 3 is an explanatory diagram showing a wiring pattern of a magnetic sensing part and a temperature compensating part in a magnetoresistive element according to a second example of the present invention.
【図４】従来の磁気抵抗素子の配線パターンを示す説明
図である。FIG. 4 is an explanatory diagram showing a wiring pattern of a conventional magnetoresistive element.
１１、２１ 磁気抵抗素子 １２、２２ 感磁部 １３、２３ 温度補償部 １４、１５、２４、２５ 電極 １６、２６ 配線 11, 21 Magnetoresistance element 12, 22 Magnetic sensing part 13, 23 Temperature compensation part 14, 15, 24, 25 Electrode 16, 26 Wiring
Claims (5)
磁部と、強磁性体薄膜の配線パターンからなる温度補償
部と、これらを相互に接続している配線部とを有する磁
気抵抗素子において、 前記感磁部および前記温度補償部のそれぞれの配線パタ
ーンにおける通電時の熱収支が同一であることを特徴と
する磁気抵抗素子。1. A magnetoresistive element having a magneto-sensitive part formed of a wiring pattern of a ferromagnetic thin film, a temperature compensation part formed of a wiring pattern of a ferromagnetic thin film, and a wiring part interconnecting these parts. A magnetoresistive element, wherein the wirings of the magnetic sensing part and the temperature compensating part have the same heat balance when energized.
度補償部の配線パターンの形成領域の形状とは、駆動電
圧側電極と接地電極の中間線に対して対称であることを
特徴とする磁気抵抗素子。2. The configuration according to claim 1, wherein the shape of the wiring pattern forming region of the magneto-sensitive portion and the shape of the wiring pattern forming region of the temperature compensating portion are in the middle line between the drive voltage side electrode and the ground electrode. A magnetoresistive element characterized by being symmetrical to the element.
ーンは、配線パターンの形成領域の形状が同一であり、
且つ、幅、長さが異なる配線から形成されていることを
特徴とする磁気抵抗素子。3. The wiring pattern according to claim 1, wherein the wiring pattern of the magnetic sensing part and the wiring pattern of the temperature compensation part have the same shape of a wiring pattern forming region.
A magnetoresistive element formed of wirings having different widths and lengths.
ーンは、材質、膜厚、幅、長さのうちの少なくとも二つ
が相互に異なる配線から形成されていることを特徴とす
る磁気抵抗素子。4. The wiring pattern according to claim 1, wherein the wiring pattern of the magnetic sensing part and the wiring pattern of the temperature compensating part are formed of wirings different from each other in at least two of a material, a film thickness, a width, and a length. A magnetoresistive element.
ーンは、材質、膜厚、幅、長さのうちの少なくとも一つ
が相互に異なる配線から形成されており、前記感磁部と
前記温度補償部のそれぞれの配線パターンの形成領域の
形状および表面積が相違していることを特徴とする磁気
抵抗素子。5. The wiring pattern according to claim 1, wherein the wiring pattern of the magnetic sensing part and the wiring pattern of the temperature compensating part are formed of wirings having at least one of a material, a film thickness, a width, and a length different from each other. A magneto-resistive element, wherein the shape and surface area of the wiring pattern forming regions of the magnetic sensing part and the temperature compensating part are different from each other.
Priority Applications (1)
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|---|---|---|---|
| JP2000107612A JP3749649B2 (en) | 1999-04-16 | 2000-04-10 | Magnetoresistive element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-108756 | 1999-04-16 | ||
| JP10875699 | 1999-04-16 | ||
| JP2000107612A JP3749649B2 (en) | 1999-04-16 | 2000-04-10 | Magnetoresistive element |
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| Publication Number | Publication Date |
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ID=26448582
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005327934A (en) * | 2004-05-14 | 2005-11-24 | Denso Corp | Thin-film resistance device, and method for adjusting resistance-temperature characteristic |
| CN106461742A (en) * | 2014-06-18 | 2017-02-22 | 三菱电机株式会社 | Magnetic sensor device and method for producing same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021044429A (en) | 2019-09-12 | 2021-03-18 | キオクシア株式会社 | Magnetic storage device |
-
2000
- 2000-04-10 JP JP2000107612A patent/JP3749649B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005327934A (en) * | 2004-05-14 | 2005-11-24 | Denso Corp | Thin-film resistance device, and method for adjusting resistance-temperature characteristic |
| JP4498819B2 (en) * | 2004-05-14 | 2010-07-07 | 株式会社デンソー | Thin film resistance device and resistance temperature characteristic adjusting method |
| CN106461742A (en) * | 2014-06-18 | 2017-02-22 | 三菱电机株式会社 | Magnetic sensor device and method for producing same |
| CN106461742B (en) * | 2014-06-18 | 2019-05-28 | 三菱电机株式会社 | Magnet sensor arrangement and its manufacturing method |
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| Publication number | Publication date |
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