JP2000349058A - Semiconductor treating device and method - Google Patents

Semiconductor treating device and method

Info

Publication number
JP2000349058A
JP2000349058A JP11155510A JP15551099A JP2000349058A JP 2000349058 A JP2000349058 A JP 2000349058A JP 11155510 A JP11155510 A JP 11155510A JP 15551099 A JP15551099 A JP 15551099A JP 2000349058 A JP2000349058 A JP 2000349058A
Authority
JP
Japan
Prior art keywords
semiconductor material
chemical
substrate
processing
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11155510A
Other languages
Japanese (ja)
Other versions
JP3228915B2 (en
Inventor
Hiroyuki Ohashi
裕之 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Leading Edge Technologies Inc
Original Assignee
Semiconductor Leading Edge Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Leading Edge Technologies Inc filed Critical Semiconductor Leading Edge Technologies Inc
Priority to JP15551099A priority Critical patent/JP3228915B2/en
Priority to KR1020000013958A priority patent/KR20010006830A/en
Publication of JP2000349058A publication Critical patent/JP2000349058A/en
Application granted granted Critical
Publication of JP3228915B2 publication Critical patent/JP3228915B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent treatment liquid or rinsing water from remaining at a substrate or a substrate retention part by providing a supply path for supplying chemical liquid or pure water into a treatment tank while a semiconductor material retaining tool is connected to the supply source of the chemical liquid or the pure water. SOLUTION: A substrate retaining tool 3 is provided with a substrate 4 and three substrate connection parts 5 that are connected to the substrate 4, and the substrate part 4 is provided with an introduction line 8 that is connected to the supply source of external chemical liquid or pure water. The substrate 4 and the substrate contact part 5 of the substrate retaining tool 2 is formed to be hollow or to have a pipeline inside, chemical liquid or pure water that is supplied from the introduction line 8 is circulated inside, and the chemical liquid or rinsing water is allowed to flow out of a supply port 6 that is provided at the substrate contact part 5. A treatment chemical introduction port 9 is provided to introduce the chemical or rinsing water for treatment to a treatment tank 2, and a dry chemical introduction port 10 is provided to introduce drying chemicals or the like from the upper portion of the treatment tank 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体材料の処理
装置及び処理方法の改良に関するもので、特に、バッチ
式の処理装置及び処理方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a processing apparatus and a processing method for semiconductor materials, and more particularly to a batch processing apparatus and a processing method.

【0002】[0002]

【従来の技術】図4は、従来のバッチ式洗浄装置におけ
る処理槽の構造の一例を示す図である。図4において、
1は半導体基板、2は処理槽、3Aは半導体基板1を保
持する基板保持具、4Aはその基体部、5Aは半導体基
板1を載置する基板接触部、9は処理用薬液などの導入
口、10は乾燥用薬品などの導入口を示す。このような
従来のバッチ式洗浄装置における、例えばIPA乾燥装置
(イソプロピルアルコール乾燥装置)においては、基板
乾燥時、半導体基板1と基板接触部5Aの隙間に純水が
残留する傾向があった。この水滴の残留は付近の汚染を
吸着し易く、基板上において異物の発生原因となること
が知られている。図5に、乾燥時に水滴残りにより半導
体基板1に付着した異物1Aの基板マップの例を示す。
2. Description of the Related Art FIG. 4 is a view showing an example of the structure of a processing tank in a conventional batch type cleaning apparatus. In FIG.
1 is a semiconductor substrate, 2 is a processing tank, 3A is a substrate holder for holding the semiconductor substrate 1, 4A is a base portion thereof, 5A is a substrate contact portion on which the semiconductor substrate 1 is placed, and 9 is an inlet for processing chemicals or the like. Reference numeral 10 denotes an inlet for a drying chemical or the like. In such a conventional batch type cleaning apparatus, for example, in an IPA drying apparatus (isopropyl alcohol drying apparatus), pure water tends to remain in the gap between the semiconductor substrate 1 and the substrate contact portion 5A when the substrate is dried. It is known that the residual water droplets easily adsorb contamination in the vicinity and cause foreign matter on the substrate. FIG. 5 shows an example of a substrate map of a foreign substance 1A attached to the semiconductor substrate 1 due to remaining water droplets during drying.

【0003】また、リン酸や硫酸等による粘性の高い薬
液にて、エッチングもしくは洗浄した後の水洗時、基板
保持部にエッチングもしくは洗浄液が残留する。これら
の薬品残留はエッチング後の流水時、基板保持部におけ
る純水置換効率が悪くなり、その部分におけるエッチン
グ量が多くなる現象がある。これらパーティクルの発生
やエッチングの不均一は、半導体デバイスの製造歩留ま
りを低下させる要因となっていた。
[0003] In addition, when washing with water after etching or washing with a highly viscous chemical solution such as phosphoric acid or sulfuric acid, the etching or washing solution remains on the substrate holding portion. The residual of these chemicals causes a phenomenon in which, when flowing water after etching, the efficiency of pure water replacement in the substrate holding portion is deteriorated, and the amount of etching in that portion is increased. The generation of these particles and the non-uniformity of etching have been factors that reduce the manufacturing yield of semiconductor devices.

【0004】[0004]

【発明が解決しようとする課題】本発明は、上述した従
来の課題を解決するためになされてもので、基板処理時
の処理液が基板あるいは基板保持部に残留したり、ま
た、洗浄時の洗浄水が基板あるいは基板保持部に残留し
たりすることを防止し、パーティクル発生の抑制および
エッチング均一性の向上などを目的とした半導体材料の
処理装置および処理方法を提供しようとするものであ
る。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and therefore, a processing solution during substrate processing remains on a substrate or a substrate holding portion, and a cleaning solution during substrate cleaning. An object of the present invention is to provide a semiconductor material processing apparatus and a processing method for preventing cleaning water from remaining on a substrate or a substrate holding portion, suppressing generation of particles, improving etching uniformity, and the like.

【0005】[0005]

【課題を解決するための手段】この発明の請求項1にか
かる半導体処理装置は、半導体材料の処理槽と、この処
理槽の中に配置されて半導体材料を保持する半導体材料
保持具と、前記処理槽に処理用または洗浄用の薬液また
は純水を導入する導入手段とを備え、前記半導体材料保
持具は薬液または純水の供給源に接続されて薬液または
純水を前記処理槽内に供給する供給路を有していること
を特徴とするものである。
According to a first aspect of the present invention, there is provided a semiconductor processing apparatus, comprising: a semiconductor material processing tank; a semiconductor material holder disposed in the processing tank to hold the semiconductor material; Introducing means for introducing a chemical or pure water for processing or cleaning into the processing tank, wherein the semiconductor material holder is connected to a supply source of the chemical or pure water to supply the chemical or pure water into the processing tank. Characterized in that it has a supply path for

【0006】また、請求項2にかかる半導体処理装置
は、請求項1のものにおいて、前記半導体材料保持具
は、薬液または純水の供給口を、半導体材料を保持する
保持面に複数有していることを特徴とするものである。
According to a second aspect of the present invention, in the semiconductor processing apparatus according to the first aspect, the semiconductor material holder has a plurality of supply ports for chemical liquid or pure water on a holding surface for holding the semiconductor material. It is characterized by having.

【0007】また、請求項3にかかる半導体処理装置
は、請求項1のものにおいて、前記半導体材料保持具
は、乾燥用薬液、その蒸気またはそのミストを供給する
ことを特徴とするものである。
In a third aspect of the present invention, in the semiconductor processing apparatus according to the first aspect, the semiconductor material holder supplies a chemical for drying, a vapor thereof, or a mist thereof.

【0008】また、請求項4にかかる半導体処理装置
は、請求項1のものにおいて、前記半導体材料保持具
は、洗浄用薬液または純水を供給することを特徴とする
ものである。
According to a fourth aspect of the present invention, in the semiconductor processing apparatus according to the first aspect, the semiconductor material holder supplies a cleaning chemical or pure water.

【0009】また、請求項5にかかる半導体処理装置
は、請求項1のものにおいて、前記半導体材料保持具
は、エッチング用薬液を供給することを特徴とするもの
である。
According to a fifth aspect of the present invention, in the semiconductor processing apparatus according to the first aspect, the semiconductor material holder supplies an etching chemical.

【0010】また、請求項6にかかる半導体処理装置
は、請求項1のものにおいて、前記処理槽内に配置さ
れ、前記処理槽内の薬液または純水を検知して前記半導
体材料保持具が前記薬液または純水の液面より上に出た
ことを検出する検出手段を備えたことを特徴とするもの
である。
According to a sixth aspect of the present invention, there is provided the semiconductor processing apparatus according to the first aspect, wherein the semiconductor material holder is disposed in the processing tank, and detects the chemical solution or pure water in the processing tank and sets the semiconductor material holder. It is characterized by comprising a detecting means for detecting that the liquid has come out above the liquid surface of the chemical or pure water.

【0011】また、請求項7にかかる半導体処理装置
は、半導体材料の処理槽と、この処理槽の中に配置され
て半導体材料を保持する半導体材料保持具と、前記処理
槽内に処理用または洗浄用の薬液または純水を導入する
導入手段と、前記処理槽内に配置され薬液または純水の
供給源に接続されて薬液または純水を前記半導体材料保
持具の半導体材料の保持面近傍に供給する供給手段とを
備えたことを特徴とするものである。
According to a seventh aspect of the present invention, there is provided a semiconductor processing apparatus, comprising: a semiconductor material processing tank; a semiconductor material holder disposed in the processing tank to hold the semiconductor material; Introducing means for introducing a chemical solution or pure water for cleaning, and connected to a supply source of the chemical solution or pure water disposed in the treatment tank and bringing the chemical solution or pure water into the vicinity of the semiconductor material holding surface of the semiconductor material holder. And supplying means for supplying.

【0012】また、請求項8にかかる半導体処理方法
は、半導体材料の処理槽において、半導体材料保持具に
保持された半導体材料を処理用薬品または純水で処理す
るステップと、前記処理後に前記半導体材料と材料保持
具との接触面近傍に洗浄用または乾燥用の薬品または純
水を供給するステップとを含むことを特徴とするもので
ある。
In a semiconductor processing method according to an eighth aspect of the present invention, in the semiconductor material processing tank, the semiconductor material held in the semiconductor material holder is treated with a processing chemical or pure water; Supplying a cleaning or drying chemical or pure water to the vicinity of the contact surface between the material and the material holder.

【0013】また、請求項9にかかる半導体処理方法
は、半導体材料の処理槽内で半導体材料保持具に保持さ
れた半導体材料を処理用薬品または純水で処理するステ
ップにおいて、前記処理槽内に前記処理用薬液または純
水を導入するとともに、前記半導体材料と前記半導体材
料保持具との接触面の近傍から前記接触面に向かって処
理用薬液または純水を供給することを特徴とするもので
ある。
According to a ninth aspect of the present invention, in the semiconductor processing method, the semiconductor material held in the semiconductor material holder is treated with a processing chemical or pure water in the semiconductor material processing tank. Introducing the processing chemical or pure water, and supplying the processing chemical or pure water from the vicinity of the contact surface between the semiconductor material and the semiconductor material holder toward the contact surface. is there.

【0014】[0014]

【発明の実施の形態】以下、この発明の実施の形態につ
いて、図面を参照して説明する。 実施の形態1.図1は、この発明の実施の形態1を説明
するための半導体材料の処理槽の透視斜視図である。ま
た、図2は、半導体材料保持具の斜視図である。図1お
よび図2において、1は処理される半導体基板(一般に
半導体材料)、2は半導体基板1を処理または洗浄する
ための処理槽、、3は半導体基板1を保持する基板保持
具(一般に半導体材料保持具)、4はその基体部、5は
半導体基板1と接触してこれを支える基板保持具2の基
板接触部、6は基板保持具2の基板接触部5から薬品も
しくは洗浄水を供給するための供給口(開口)、7は基
板接触部5の供給口6から処理槽内に供給される薬品も
しくは洗浄水の向きを示す。
Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. FIG. 1 is a see-through perspective view of a processing tank for semiconductor material for describing Embodiment 1 of the present invention. FIG. 2 is a perspective view of the semiconductor material holder. 1 and 2, reference numeral 1 denotes a semiconductor substrate to be processed (generally, a semiconductor material), 2 denotes a processing tank for processing or cleaning the semiconductor substrate 1, and 3 denotes a substrate holder (generally, a semiconductor) for holding the semiconductor substrate 1. Material holder), 4 is a base portion thereof, 5 is a substrate contact portion of a substrate holder 2 that contacts and supports the semiconductor substrate 1, and 6 is a chemical or cleaning water supplied from the substrate contact portion 5 of the substrate holder 2. The supply port (opening) 7 indicates the direction of the chemical or cleaning water supplied from the supply port 6 of the substrate contact portion 5 into the processing tank.

【0015】また、8は基板保持具2に外部から薬品も
しくは洗浄水を導入するための導入ライン(配管)、9
は処理槽2に処理用の薬品もしくは洗浄水を導入するた
めの、従来から設けてある処理薬品導入口、10は処理
槽2の上部から乾燥用薬品などを導入するために、従来
から設けてある乾燥薬品導入口、11は洗浄水液面セン
サーを示す。
Reference numeral 8 denotes an introduction line (piping) for introducing a chemical or cleaning water into the substrate holder 2 from the outside;
Is a conventionally provided processing chemical inlet for introducing a processing chemical or cleaning water into the processing tank 2, and 10 is a conventionally provided processing chemical introduction port for introducing a drying chemical or the like from above the processing tank 2. A certain dry chemical inlet 11, 11 indicates a cleaning water level sensor.

【0016】図2に示すように、基板保持具3は、基体
部4とこの基体部4に接続された3本の基板接触部5を
備えている。また、基体部4には、外部の薬液または純
水の供給源に接続された導入ライン8を備えている。基
板保持具2の基体部4および基板接触部5は、中空かあ
るいは内部に管路を有するように形成され、導入ライン
8から供給される薬液または純水が内部を流通し、基板
接触部5に設けられた供給口6から、薬液または洗浄水
が流出するようになっている。
As shown in FIG. 2, the substrate holder 3 includes a base 4 and three substrate contacts 5 connected to the base 4. Further, the base portion 4 is provided with an introduction line 8 connected to an external supply source of a chemical solution or pure water. The base portion 4 and the substrate contact portion 5 of the substrate holder 2 are formed so as to be hollow or have a pipe inside, and a chemical solution or pure water supplied from the introduction line 8 flows through the inside, and the substrate contact portion 5 A chemical solution or washing water flows out of a supply port 6 provided in the hopper.

【0017】次に、この処理装置の操作について、説明
する。まず、半導体基板1の薬液によるエッチングもし
くは薬液などによる洗浄時、処理薬品導入口9より薬品
が導入されるが、そのとき同時に基板接触部5の供給口
6より、半導体基板1と基板接触部5の接触部分に向け
て、あるいは、その近傍で、同じ薬品を供給する。これ
により、半導体基板1が基板接触部5と接触している部
分にも、薬品がよく流通し滞留することがない。したが
って、薬液などによる半導体基板1の処理を均一に行う
ことができる。
Next, the operation of the processing apparatus will be described. First, when the semiconductor substrate 1 is etched with a chemical solution or washed with a chemical solution, a chemical is introduced from the processing chemical introduction port 9, and at the same time, the semiconductor substrate 1 and the substrate contact portion 5 are supplied from the supply port 6 of the substrate contact portion 5. The same chemical is supplied toward or near the contact part of the. Thus, the chemical is well circulated and does not stay in the portion where the semiconductor substrate 1 is in contact with the substrate contact portion 5. Therefore, the processing of the semiconductor substrate 1 with a chemical solution or the like can be performed uniformly.

【0018】次に、半導体基板1の薬液によるエッチン
グもしくは薬液による洗浄が終了し、処理した薬液を水
洗する時、処理薬品導入口9から洗浄水が導入されると
同時に、基板接触部5の供給口6からも洗浄水を供給
し、基板接触部5に残留している薬品を積極的に洗浄水
にて置換する。
Next, when the etching of the semiconductor substrate 1 with the chemical solution or the cleaning with the chemical solution is completed and the treated chemical solution is washed with water, the cleaning water is introduced from the processing chemical introduction port 9 and the supply of the substrate contact portion 5 at the same time. Cleaning water is also supplied from the port 6, and the chemical remaining in the substrate contact portion 5 is positively replaced with the cleaning water.

【0019】特に、リン酸、硫酸等の粘性の高いエッチ
ングもしくは洗浄液で半導体基板1を洗浄した場合、通
常はその後の水洗時に、基板接触部5の薬品が置換され
ずらいため残留し、エッチングや洗浄の不均一が生じる
傾向がある。
In particular, when the semiconductor substrate 1 is washed with a highly viscous etching or cleaning solution such as phosphoric acid or sulfuric acid, the chemicals in the substrate contact portion 5 are usually hardly replaced during the subsequent washing with water, and the semiconductor substrate 1 remains. Tends to be uneven.

【0020】そのため、この実施の形態では、基板接触
部5が半導体基板1と接触する部分に向けて、供給口6
からも洗浄水を供給し、洗浄水により残留薬液などを除
去・置換し、エッチングや洗浄の均一性の向上を図る。
この場合、必要に応じ、基板保持部2に導入する薬品や
純水の圧力を調整し、供給口6から薬品あるいは水洗液
を所定の流速で噴出させ、水洗効果などを向上させるこ
とができる。
Therefore, in this embodiment, the supply port 6 is moved toward the portion where the substrate contact portion 5 contacts the semiconductor substrate 1.
Cleaning water is also supplied from the reactor to remove and replace residual chemicals and the like with the cleaning water, thereby improving the uniformity of etching and cleaning.
In this case, if necessary, the pressure of the chemical or pure water introduced into the substrate holding unit 2 is adjusted, and the chemical or rinsing liquid is ejected from the supply port 6 at a predetermined flow rate, so that the rinsing effect and the like can be improved.

【0021】なお、この場合、水洗はエッチングなどの
処理を行った槽と同一の処理槽で行う場合と、別の処理
槽で行う場合があるが、この実施の形態はそのいずれの
場合でも適用できる。
In this case, the water washing may be performed in the same processing tank as the tank which has been subjected to the processing such as etching, or may be performed in another processing tank. This embodiment is applicable to both cases. it can.

【0022】なおまた、エッチングおよび洗浄時は供給
口6を使用せず、処理薬品の水洗時のみ供給口6より水
洗液を導入するようにしてもよい。この場合でも、同様
に、エッチングや洗浄の均一性の向上を図ることができ
る。
In addition, the supply port 6 may not be used at the time of etching and cleaning, and a rinsing liquid may be introduced from the supply port 6 only at the time of rinsing the processing chemical with water. Even in this case, the uniformity of etching and cleaning can be similarly improved.

【0023】次に半導体基板1の水洗を終了した後、半
導体基板1の乾燥工程に入る。例えば、LSIのバッチ
洗浄装置などにおいて現在行われている半導体基板の乾
燥方法は、半導体基板1が水中にある間に、処理槽2上
部の空間に乾燥薬品導入口10より乾燥薬品(イソプロ
ピルアルコール等)を導入する。このとき乾燥薬品は液
体や蒸気あるいはミスト状で、単体もしくは窒素等のガ
スと共に導入される場合が多い。この乾燥薬品の導入
後、半導体基板1を浸漬している洗浄水を除去し、半導
体基板1を乾燥する。そのとき基板保持具2の基板接触
部5に表面張力により水滴が残留し、そこに異物が吸着
する傾向がある。
Next, after the washing of the semiconductor substrate 1 is completed, a drying step of the semiconductor substrate 1 is started. For example, a semiconductor substrate drying method currently used in an LSI batch cleaning apparatus or the like is based on a method in which a dry chemical (such as isopropyl alcohol) is introduced from a dry chemical inlet 10 into a space above the processing tank 2 while the semiconductor substrate 1 is in water. ). At this time, the dry chemical is often introduced in a liquid, vapor, or mist state, alone or together with a gas such as nitrogen. After the introduction of the dry chemical, the cleaning water in which the semiconductor substrate 1 is immersed is removed, and the semiconductor substrate 1 is dried. At this time, water droplets remain on the substrate contact portion 5 of the substrate holder 2 due to surface tension, and foreign matter tends to be adsorbed there.

【0024】これを避けるため、この実施の形態では、
基板乾燥時、この基板接触部5の供給口6よりイソプロ
ピルアルコール等の乾燥薬品もしくはその蒸気やミスト
を、単体もしくは窒素等のガスとともに導入し、基板接
触部5の残留水滴を積極的に乾燥させ、基板接触部5が
半導体基板1に接触している部分と、ここに接触してい
る半導体基板1の乾燥効率の向上を図る。
In order to avoid this, in this embodiment,
At the time of substrate drying, a dry chemical such as isopropyl alcohol or a vapor or mist thereof is introduced from the supply port 6 of the substrate contact portion 5 together with a single substance or a gas such as nitrogen, and the residual water droplets of the substrate contact portion 5 are positively dried. The drying efficiency of the portion where the substrate contact portion 5 is in contact with the semiconductor substrate 1 and the semiconductor substrate 1 in contact therewith are improved.

【0025】次に、この実施の形態では、処理槽2内の
洗浄水などの存在を検出する液面センサー11を設けて
いる。図1に示す例では、液面センサー11は、処理槽
2の底部で、基板接触部5と同じ位置あるいはそれより
低い位置に設けられている。
Next, in this embodiment, a liquid level sensor 11 for detecting the presence of cleaning water or the like in the processing tank 2 is provided. In the example shown in FIG. 1, the liquid level sensor 11 is provided at the same position as the substrate contact part 5 or at a lower position at the bottom of the processing tank 2.

【0026】半導体基板1が洗浄水中に浸漬され、処理
槽2内の上部空間に乾燥薬品(イソプロピルアルコール
等)が導入された後、洗浄水を抜いて徐々に液面をさげ
て乾燥が行われる。このとき、液面センサー11によ
り、液面が基板接触部5より下がったことを判断し、基
板接触部5が乾燥薬品中に露出した時点から、基板接触
部5の供給口6から乾燥薬液の供給を開始するように制
御する。このようにすれば、乾燥薬品の使用量を減少さ
せることが可能となる。
After the semiconductor substrate 1 is immersed in the cleaning water and a dry chemical (such as isopropyl alcohol) is introduced into the upper space in the processing tank 2, the cleaning water is drained and the liquid surface is gradually lowered to perform drying. . At this time, it is determined by the liquid level sensor 11 that the liquid level has dropped below the substrate contact portion 5, and from the time when the substrate contact portion 5 is exposed in the dry chemical, the dry chemical solution is supplied from the supply port 6 of the substrate contact portion 5. Control to start supply. This makes it possible to reduce the amount of dry chemical used.

【0027】なお、上述の説明は、滞留した洗浄水を処
理槽2の下部から抜いて洗浄液面の水位を下げる場合に
ついて説明した。しかし、半導体基板1を基板保持具2
とともに、洗浄液から引き上げて上部の乾燥薬品中に移
す場合もある。この場合には、液面センサー11を基板
保持具2と連結し、基板保持具2とともに洗浄液から引
き上げるようにする。これにより、同様に基板接触部5
の供給口6から乾燥薬品を流出させるタイミングを制御
することができる。
In the above description, the case where the retained cleaning water is drained from the lower part of the processing tank 2 to lower the level of the cleaning liquid has been described. However, the semiconductor substrate 1 is not
At the same time, there is a case where it is pulled up from the cleaning liquid and transferred into the upper dry chemical. In this case, the liquid level sensor 11 is connected to the substrate holder 2 and is pulled up from the cleaning liquid together with the substrate holder 2. As a result, the substrate contact portion 5
The timing at which the dry chemical flows out of the supply port 6 can be controlled.

【0028】以上説明したように、この実施の形態によ
れば、従来技術で問題であった、基板保持具3の水滴残
りに吸着していた異物が、水滴残りの減少と共に発生し
なくなり、異物による製品歩留まり低下を防止すること
が可能となる。また、このような方式であるため、基板
保持部の薬品置換もしくは乾燥効率が改善され、基板内
のエッチング均一性向上、水洗時間の短縮、乾燥時の異
物付着の抑制、乾燥時間の短縮等の作用・効果がある。
As described above, according to this embodiment, the foreign matter adsorbed on the remaining water droplets of the substrate holder 3, which is a problem in the prior art, is not generated with the decrease of the remaining water droplets. It is possible to prevent a decrease in product yield due to the above. In addition, because of such a method, the chemical replacement or drying efficiency of the substrate holding portion is improved, the etching uniformity in the substrate is improved, the washing time is shortened, the adhesion of foreign substances during drying is suppressed, and the drying time is shortened. Has action and effect.

【0029】実施の形態2.図3は、この発明の実施の
形態2を説明するための半導体材料の処理槽の透視斜視
図である。図3において、12は薬品もしくは洗浄水の
導入ライン、13は導入ライン13に設けられた供給口
(開口)、14は導入ライン12に薬品もしくは洗浄水
を導入するための薬液導入口 、15は導入ライン12
の供給口13から処理槽内に供給される薬品もしくは洗
浄水の向きを示す。この場合、基板保持具3自体には、
薬液の供給手段を設けなくてよい。その他の構成部分
は、図1と同様であり、同一または相当部分に同一の符
号を付して、その説明を省略する。
Embodiment 2 FIG. 3 is a perspective view of a semiconductor material processing tank for explaining Embodiment 2 of the present invention. In FIG. 3, reference numeral 12 denotes a chemical or cleaning water introduction line, 13 denotes a supply port (opening) provided in the introduction line 13, 14 denotes a chemical solution introduction port for introducing a chemical or cleaning water into the introduction line 12, and 15 denotes Introduction line 12
Indicates the direction of the chemical or cleaning water supplied from the supply port 13 into the processing tank. In this case, the substrate holder 3 itself includes:
There is no need to provide a chemical liquid supply unit. Other components are the same as those in FIG. 1, and the same or corresponding portions are denoted by the same reference characters and description thereof is omitted.

【0030】この実施の形態では、導入ライン12が基
板保持具3の基板接触部5の近傍に配置され、多数の供
給口6が基板接触部5に面するように設けられている。
外部の薬液または純水の供給源からの薬品は、薬液導入
口14から導入ライン12に導入され、供給口13か
ら、基板接触部5に向けて流出させられる。
In this embodiment, the introduction line 12 is arranged near the substrate contact portion 5 of the substrate holder 3, and a number of supply ports 6 are provided so as to face the substrate contact portion 5.
A chemical from an external chemical solution or pure water supply source is introduced into the introduction line 12 from the chemical solution introduction port 14, and is discharged from the supply port 13 toward the substrate contact portion 5.

【0031】先に述べた実施の形態1では、基板保持具
3の基板接触部5に設けた供給口6から薬液などを流出
させていたのに対し、この実施の形態2では別に導入ラ
イン12を設けたものである。このようにすると、導入
ライン12の配置、あるいは、薬品などの流れ方向を調
整しやすい利点がある。その機能・動作および効果は、
実施の形態1で説明したことと同様であるから、詳細な
説明は省略する。
In the first embodiment described above, a chemical solution or the like is discharged from the supply port 6 provided in the substrate contact portion 5 of the substrate holder 3, whereas in the second embodiment, the introduction line 12 is separately provided. Is provided. In this case, there is an advantage that the arrangement of the introduction line 12 or the flow direction of the chemical or the like can be easily adjusted. Its functions, operations and effects are
Since this is the same as that described in the first embodiment, a detailed description is omitted.

【0032】なお、以上の実施の形態1および2では、
半導体基板の処理・洗浄を例として説明した。しかし、
この発明は、半導体ウェーハなどの半導体材料、液晶部
品その他の材料の処理・洗浄にも適用できる。この明細
書で、半導体材料とはそういうものを含めて包括的に意
味するものとする。
In Embodiments 1 and 2 described above,
The processing and cleaning of the semiconductor substrate has been described as an example. But,
The present invention is also applicable to processing and cleaning of semiconductor materials such as semiconductor wafers, liquid crystal components and other materials. In this specification, the term “semiconductor material” is meant to include all such materials.

【0033】[0033]

【発明の効果】以上説明したように、本発明によれば、
半導体材料とこれを保持する半導体材料保持具との接触
部分に向けて、処理用または洗浄用の薬品もしくは洗浄
水を積極的に供給し、半導体材料と半導体材料保持具の
接触面の近傍の薬品あるいは純水、または残留する残留
液の置換効率を向上させることができ、エッチングや洗
浄もしくは乾燥性能の向上を図り、また処理装置(一般
に半導体製造装置)の処理能力の向上等を図ることがで
きる。
As described above, according to the present invention,
Actively supply processing or cleaning chemicals or cleaning water to the contact portion between the semiconductor material and the semiconductor material holder holding the semiconductor material, and the chemical near the contact surface between the semiconductor material and the semiconductor material holder. Alternatively, the replacement efficiency of pure water or the remaining liquid can be improved, so that the etching, cleaning or drying performance can be improved, and the processing capability of a processing apparatus (generally, a semiconductor manufacturing apparatus) can be improved. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】 この発明の実施の形態1による半導体材料の
処理槽の透視斜視図である。
FIG. 1 is a perspective view of a semiconductor material processing tank according to Embodiment 1 of the present invention.

【図2】 この発明の実施の形態1による半導体材料保
持具の斜視図である。
FIG. 2 is a perspective view of a semiconductor material holder according to the first embodiment of the present invention.

【図3】 この発明の実施の形態2による半導体材料の
処理槽の透視斜視図である。
FIG. 3 is a perspective view of a semiconductor material processing tank according to a second embodiment of the present invention;

【図4】 従来のバッチ式洗浄装置における処理槽の構
造の一例を示す透視斜視図である。
FIG. 4 is a perspective view showing an example of the structure of a processing tank in a conventional batch-type cleaning apparatus.

【図5】 従来のバッチ式洗浄方法において半導体基板
に付着した異物の基板マップを示す図である。
FIG. 5 is a view showing a substrate map of a foreign substance attached to a semiconductor substrate in a conventional batch-type cleaning method.

【符号の説明】[Explanation of symbols]

1 半導体基板(半導体材料)、 2 処理槽、 3 基板保持具(半導体材料保持具)、 4 基体部、 5 基板接触部、 6 供給口(開口)、 7 薬品もしくは洗浄水の向き、 8 導入ライン、 9 処理薬品導入口、 10 乾燥薬品導入口、 11 洗浄水液面センサ、 12 導入ライン、 13 供給口、 14 薬液導入口 、 15 薬品もしくは洗浄水の向き。 Reference Signs List 1 semiconductor substrate (semiconductor material), 2 processing tank, 3 substrate holder (semiconductor material holder), 4 base part, 5 substrate contact part, 6 supply port (opening), 7 direction of chemical or cleaning water, 8 introduction line , 9 treatment chemical inlet, 10 dry chemical inlet, 11 washing water level sensor, 12 introduction line, 13 supply port, 14 chemical inlet, 15 direction of chemical or washing water.

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成12年6月5日(2000.6.5)[Submission date] June 5, 2000 (2006.5.5)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Correction target item name] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【特許請求の範囲】[Claims]

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0005[Correction target item name] 0005

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0005】[0005]

【課題を解決するための手段】この発明の請求項1にか
かる半導体処理装置は、半導体材料の処理槽と、この処
理槽の中に配置されて半導体材料を保持する半導体材料
保持具と、前記処理槽に処理用または乾燥用薬品を導
入する導入手段とを備え、前記半導体材料保持具は前記
処理用または乾燥用の薬品の供給源に接続されて前記処
理用または乾燥用の薬品と同じ薬品を前記処理槽内に供
給する供給路を有していることを特徴とするものであ
る。
According to a first aspect of the present invention, there is provided a semiconductor processing apparatus, comprising: a semiconductor material processing tank; a semiconductor material holder disposed in the processing tank to hold the semiconductor material; and a means for introducing the chemicals for processing or drying processing tank, wherein the semiconductor material retainer wherein
The processing is connected to a source of chemicals processing or drying
It is characterized by having a supply path for supplying the same chemical as the chemical for treatment or drying into the treatment tank.

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0006[Correction target item name] 0006

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0006】また、請求項2にかかる半導体処理装置
は、請求項1のものにおいて、前記半導体材料保持具
は、前記供給路の前記薬品を半導体基板との接触部分に
向けて供給する供給口を有していることを特徴とするも
のである。
According to a second aspect of the present invention, there is provided a semiconductor processing apparatus according to the first aspect, wherein the semiconductor material holder is provided.
Is to transfer the chemical in the supply path to a portion in contact with the semiconductor substrate.
It is characterized by having a supply port for supplying it toward .

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0007[Correction target item name] 0007

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0007】また、請求項3にかかる半導体処理装置
は、請求項1または2のものにおいて、前記半導体材料
保持具は、薬品の供給口を、半導体材料を保持する保持
面に複数有していることを特徴とするものである。
According to a third aspect of the present invention, there is provided a semiconductor processing apparatus according to the first or second aspect , wherein the semiconductor material comprises
The holder is used to hold the chemical supply port to hold the semiconductor material.
It is characterized by having a plurality on the surface .

【手続補正5】[Procedure amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0008[Correction target item name] 0008

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0008】また、請求項4にかかる半導体処理装置
は、請求項1または2のものにおいて、前記半導体材料
保持具は、乾燥用薬液、その蒸気またはそのミストを供
給することを特徴とするものである。
According to a fourth aspect of the present invention, there is provided a semiconductor processing apparatus according to the first or second aspect , wherein the semiconductor material is
Holders provide a chemical for drying, its vapor or its mist.
It is characterized by feeding .

【手続補正6】[Procedure amendment 6]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0009[Correction target item name] 0009

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0009】また、請求項5にかかる半導体処理装置
は、請求項1または2のものにおいて、前記半導体材料
保持具は、エッチング用薬品を供給することを特徴とす
るものである。
According to a fifth aspect of the present invention, in the semiconductor processing apparatus according to the first or second aspect , the semiconductor material holder supplies an etching chemical .

【手続補正7】[Procedure amendment 7]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0010[Correction target item name] 0010

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0010】また、請求項6にかかる半導体処理装置
は、請求項1または2のものにおいて、前記処理槽内に
配置され、前記処理槽内の薬品を検知して前記半導体材
料保持具が前記薬品の液面より上に出たことを検出する
検出手段を備えたことを特徴とするものである。
Further, the semiconductor processing apparatus according to claim 6, in what according to claim 1 or 2, disposed in the processing bath, said semiconductor material holder by detecting the drug product in the processing bath is the it is characterized in that it comprises a detecting means for detecting that comes above the liquid surface of the drug product.

【手続補正8】[Procedure amendment 8]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0011[Correction target item name] 0011

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0011】また、請求項7にかかる半導体処理装置
は、半導体材料の処理槽と、この処理槽の中に配置され
て半導体材料を保持する半導体材料保持具と、前記処理
槽に処理用または洗浄用の薬品または純水を導入する導
入手段と、前記処理槽内に配置され、前記処理槽内の
または純水を検知して前記半導体材料保持具が前記
または純水の液面より上に出たことを検出する検出手
段とを備え、前記半導体材料保持具は前記処理用または
洗浄用の薬品または純水の供給源に接続されて前記処理
用または洗浄用の薬品または純水と同じ薬品または純水
を前記処理槽内に供給する供給路を有していることを特
徴とするものである。
According to a seventh aspect of the present invention, there is provided a semiconductor processing apparatus, comprising: a processing tank for a semiconductor material; a semiconductor material holder disposed in the processing tank to hold the semiconductor material; and introducing means for introducing chemicals or pure water use, is disposed in said processing bath, medicine the processing bath
It detects the goods or pure water wherein the semiconductor material retainer wherein agent
Detection means for detecting that the product or pure water has come out above the liquid level, wherein the semiconductor material holder is used for the processing or
It said processing being connected to a source of chemicals for cleaning or pure water
A supply path for supplying the same chemical or pure water as the chemical or pure water for cleaning or cleaning into the treatment tank.

【手続補正9】[Procedure amendment 9]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0012[Correction target item name] 0012

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0012】また、請求項8にかかる半導体処理装置
は、半導体材料の処理槽と、この処理槽の中に配置され
て半導体材料を保持する半導体材料保持具と、前記処理
槽内に処理用または洗浄用の薬品または純水を導入する
導入手段と、前記半導体材料保持具と別体に構成されて
前記処理槽内に配置され、前記処理用または洗浄用の薬
品または純水の供給源に接続されて前記処理用または洗
浄用の薬品または純水と同じ薬品または純水を前記半導
体材料保持具の半導体材料の保持面近傍に供給する供給
手段とを備えたことを特徴とするものである。
Further, a semiconductor processing according to claim 8 is provided.apparatus
IsA semiconductor material processing tank, and a processing tank disposed in the processing tank.
Semiconductor material holder for holding semiconductor material by
Introduce chemicals or pure water for treatment or cleaning into the tank
Introducing means, which are configured separately from the semiconductor material holder
The treatment or cleaning agent disposed in the treatment tank.
Product or pure water supply for the treatment or washing
The same chemical or pure water as the cleaning chemical or pure water
Supply to supply the body material holder near the semiconductor material holding surface
With meansIt is characterized by the following.

【手続補正10】[Procedure amendment 10]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0013[Correction target item name] 0013

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0013】また、請求項9にかかる半導体処理方法
は、請求項8のものにおいて、前記供給手段は、 前記
薬品または純水を半導体基板との接触部分に向けて供給
する多数の供給口を有していることを特徴とするもので
ある。また、請求項10にかかる半導体処理方法は、半
導体材料の処理槽内で半導体材料保持具に保持された半
導体材料を処理用薬品または純水で処理するステップに
おいて、前記処理槽内に前記処理用薬液または純水を導
入するとともに、前記半導体材料と前記半導体材料保持
具との接触面の近傍から前記接触面に向かって処理用薬
品または純水を供給することを特徴とするものである
また、請求項11にかかる半導体処理方法は、半導体材
料の処理槽と、この処理槽に処理用または乾燥用の薬品
を導入する導入手段と、前記処理槽の中に配置されて半
導体材料を保持し、処理用または乾燥用の薬品を前記処
理槽内に供給する供給路を有している半導体材料保持具
とを備えた半導体処理装置において、前記導入手段と前
記半導体材料保持具とから同じ処理用または乾燥用の薬
品を同時に供給することを特徴とするものである
た、請求項12にかかる半導体処理方法は、請求項11
の方法において、前記半導体材料保持具から、前記薬品
を半導体基板との接触部分に向けて供給することを特徴
とするものである
According to a ninth aspect of the present invention, in the semiconductor processing method according to the eighth aspect, the supply means includes:
Supply chemical or pure water to the contact area with the semiconductor substrate
It is characterized by having a number of supply ports for the supply . Further, the semiconductor processing method according to claim 10 is a semiconductor processing method.
The half held by the semiconductor material holder in the conductor material processing tank
For the step of treating conductor materials with treatment chemicals or pure water
The treatment chemical or pure water is introduced into the treatment tank.
The semiconductor material and the semiconductor material holding
From the vicinity of the contact surface with the tool toward the contact surface
The product or pure water is supplied .
Also, the semiconductor processing method according to claim 11 is a semiconductor material processing method.
Treatment tank and chemicals for treatment or drying in this treatment tank
Introduction means for introducing a gas,
The conductor material is held, and a processing or drying chemical is
Semiconductor material holder having a supply path for supplying into a bath
A semiconductor processing apparatus comprising:
The same processing or drying agent from the semiconductor material holder
It is characterized in that articles are supplied simultaneously . Ma
According to a twelfth aspect of the present invention, there is provided a semiconductor processing method according to the eleventh aspect.
The method according to claim 1, wherein the semiconductor material holder is provided with the chemical
Is supplied to the contact part with the semiconductor substrate
It is assumed that .

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 半導体材料の処理槽と、この処理槽の中
に配置されて半導体材料を保持する半導体材料保持具
と、前記処理槽に処理用または洗浄用の薬液または純水
を導入する導入手段とを備え、前記半導体材料保持具は
薬液または純水の供給源に接続されて薬液または純水を
前記処理槽内に供給する供給路を有していることを特徴
とする半導体処理装置。
1. A processing tank for semiconductor material, a semiconductor material holder disposed in the processing tank to hold a semiconductor material, and an introduction for introducing a chemical or pure water for processing or cleaning into the processing tank. Means, wherein the semiconductor material holder has a supply path connected to a supply source of a chemical or pure water to supply a chemical or pure water into the processing tank.
【請求項2】 前記半導体材料保持具は、薬液または純
水の供給口を、半導体材料を保持する保持面に複数有し
ていることを特徴とする請求項1に記載の半導体処理装
置。
2. The semiconductor processing apparatus according to claim 1, wherein the semiconductor material holder has a plurality of supply ports for chemical liquid or pure water on a holding surface for holding the semiconductor material.
【請求項3】 前記半導体材料保持具は、乾燥用薬液、
その蒸気またはそのミストを供給することを特徴とする
請求項1に記載の半導体処理装置。
3. The semiconductor material holder, comprising:
The semiconductor processing apparatus according to claim 1, wherein the vapor or the mist is supplied.
【請求項4】 前記半導体材料保持具は、洗浄用薬液ま
たは純水を供給することを特徴とする請求項1に記載の
半導体処理装置。
4. The semiconductor processing apparatus according to claim 1, wherein the semiconductor material holder supplies a cleaning chemical or pure water.
【請求項5】 前記半導体材料保持具は、エッチング用
薬液を供給することを特徴とする請求項1に記載の半導
体処理装置。
5. The semiconductor processing apparatus according to claim 1, wherein the semiconductor material holder supplies an etching chemical.
【請求項6】 前記処理槽内に配置され、前記処理槽内
の薬液または純水を検知して前記半導体材料保持具が前
記薬液または純水の液面より上に出たことを検出する検
出手段を備えたことを特徴とする請求項1に記載の半導
体処理装置。
6. A detection device disposed in the processing tank, for detecting a chemical solution or pure water in the processing tank and detecting that the semiconductor material holder has risen above the level of the chemical solution or pure water. 2. The semiconductor processing apparatus according to claim 1, further comprising means.
【請求項7】 半導体材料の処理槽と、この処理槽の中
に配置されて半導体材料を保持する半導体材料保持具
と、前記処理槽内に処理用または洗浄用の薬液または純
水を導入する導入手段と、前記処理槽内に配置され薬液
または純水の供給源に接続されて薬液または純水を前記
半導体材料保持具の半導体材料の保持面近傍に供給する
供給手段とを備えたことを特徴とする半導体処理装置。
7. A processing tank for semiconductor material, a semiconductor material holder disposed in the processing tank for holding a semiconductor material, and introducing a chemical or pure water for processing or cleaning into the processing tank. An introduction unit, and a supply unit disposed in the processing tank, connected to a supply source of a chemical solution or pure water, and supplying a chemical solution or pure water to a vicinity of a semiconductor material holding surface of the semiconductor material holder. Characteristic semiconductor processing equipment.
【請求項8】 半導体材料の処理槽において、半導体材
料保持具に保持された半導体材料を処理用薬品または純
水で処理するステップと、前記処理後に前記半導体材料
と材料保持具との接触面近傍に洗浄用または乾燥用の薬
品または純水を供給するステップとを含むことを特徴と
する半導体処理方法。
8. A step of treating the semiconductor material held in the semiconductor material holder with a processing chemical or pure water in a semiconductor material processing tank, and near a contact surface between the semiconductor material and the material holder after the processing. Supplying a cleaning or drying chemical or pure water to the semiconductor device.
【請求項9】 半導体材料の処理槽内で半導体材料保持
具に保持された半導体材料を処理用薬品または純水で処
理するステップにおいて、前記処理槽内に前記処理用薬
液または純水を導入するとともに、前記半導体材料と前
記半導体材料保持具との接触面の近傍から前記接触面に
向かって処理用薬液または純水を供給することを特徴と
する半導体処理方法。
9. In the step of treating the semiconductor material held in the semiconductor material holder with a processing chemical or pure water in a semiconductor material processing tank, introducing the processing chemical or pure water into the processing tank. And a processing chemical or pure water is supplied from the vicinity of the contact surface between the semiconductor material and the semiconductor material holder toward the contact surface.
JP15551099A 1999-06-02 1999-06-02 Semiconductor processing apparatus and processing method Expired - Fee Related JP3228915B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15551099A JP3228915B2 (en) 1999-06-02 1999-06-02 Semiconductor processing apparatus and processing method
KR1020000013958A KR20010006830A (en) 1999-06-02 2000-03-20 Semiconductor treatment device and methode thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15551099A JP3228915B2 (en) 1999-06-02 1999-06-02 Semiconductor processing apparatus and processing method

Publications (2)

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JP2000349058A true JP2000349058A (en) 2000-12-15
JP3228915B2 JP3228915B2 (en) 2001-11-12

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Country Link
JP (1) JP3228915B2 (en)
KR (1) KR20010006830A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100746645B1 (en) * 2006-02-06 2007-08-06 삼성전자주식회사 Supporter and apparatus for cleaning substrates with the supporter, and method for cleaning substrates

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KR20010006830A (en) 2001-01-26

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