JP2000348307A - Magneto-resistive element, thin-film magnetic head and their production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magneto-resistive(MR) element which can be enhanced in heat radiation efficiency and a thin-film magnetic head as well as a process for producing the same. SOLUTION: The MR element includes a laminate 5 formed by laminating a free layer 54 which is a magnetic layer changing freely in a magnetization direction, a magnetic separation layer 53 consisting of a nonmagnetic metal, a bid layer 52 which is a magnetic layer fixed in the magnetization direction to one direction and an antiferromagnetic material layer 15 for fixing the magnetization direction of this bid layer 52. A tapered surface 5A inclined with respect to a medium-facing surface S is formed on the end face of the laminate 5 on the side opposite to the medium-facing surface S. The element is so constituted that the distance to the surface opposite to the medium-facing surface S of the antiferromagnetic material layer 51 is greater than the distance to the surface opposite to the medium-facing surface S of the free layer 54. As a result, a sufficient heat radiation quantity from the antiferromagnetic material layer 51 may be assured and the heating of the MR element may be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a magneto-resistance effect element, a thin-film magnetic head using the same, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as the areal recording density of a hard disk drive has been improved, the performance of a thin film magnetic head has been required to be improved. As the thin film magnetic head, a composite structure in which a recording head having an inductive magnetic transducing element for writing and a reproducing head having a magnetoresistive element for reading (hereinafter also referred to as an MR (Magneto Resistive) element) is laminated. Type thin film magnetic heads are widely used.

As the MR element, an AMR element using a magnetic film exhibiting an anisotropic magnetoresistive effect (AMR) and a giant magnetoresistive (GMR) effect are shown. There is a GMR element using a magnetic film (GMR film).

A reproducing head using an AMR element is called an AMR head or simply an MR head, and a reproducing head using a GMR element is called a GMR head. The AMR head is used as a reproducing head having a surface recording density exceeding 1 gigabit / (inch) ² , and the GMR head is used as a reproducing head having a surface recording density exceeding 3 gigabit / (inch) ² .

Incidentally, as the GMR film, a "multilayer type (antiferro type)", an "induction ferri type", a "granular type", a "spin valve type" and the like have been proposed. Among these, the GMR film, which has a relatively simple structure, shows a large resistance change even in a weak magnetic field, and is considered preferable for mass production, is a spin valve type.

FIG. 23 shows a composite head 200 using a spin valve type GMR film (hereinafter abbreviated as a spin valve film).
It is a sectional side view showing the schematic structure of. Composite head 200
Is disposed to face a magnetic recording medium such as a hard disk. The composite head 200 is made of, for example, Al ₂ O ₃ .Ti
It has a substrate 201 made of C (Altic), and a lower part made of a magnetic material is formed on the substrate 201 via an insulating layer 202 made of, for example, Al ₂ O ₃ (alumina). The shield layer 203 is laminated. On the lower shield layer 203, for example, Al ₂ O ₃ or AlN
A lower shield gap layer 204 and an upper shield gap layer 206 made of (aluminum nitride) are stacked. A laminate 205 is buried between the lower shield gap layer 204 and the upper shield gap layer 206. In this case, the stacked body 205 is the spin valve type GMR film described above.

On the upper shield gap layer 206,
Upper shield layer 207 made of magnetic material (also serves as lower magnetic pole)
Are formed. The upper magnetic pole layer 210 is opposed to the upper shield layer 207 with the recording gap layer 208 made of, for example, Al ₂ O ₃ therebetween. A thin-film coil 211 is formed between the lower shield layer 207 and the upper magnetic pole layer 210 while being buried in the insulating layer 209.

[0008] The lower shield layer 203, the lower shield gap layer 204, the laminate 205 and the upper shield gap layer 206 constitute a reproducing head for reading information from the magnetic recording medium. The upper shield layer (also serving as a lower magnetic pole) 207, the write gap layer 208, the insulating layer 209, the upper magnetic pole layer 210, and the thin-film coil 211 constitute a recording head unit for writing information on a magnetic recording medium. The surface indicated by S in the drawing is a medium facing surface (air bearing surface: ABS) in which the composite head 200 faces the magnetic recording medium.
It is.

Here, the structure of the laminated body 205 which is a spin valve film will be described with reference to FIGS.
24 is a cross-sectional view (that is, a cross-sectional view taken along XXIV-XXIV in FIG. 23) of the laminate 205 parallel to the medium facing surface S, and FIG. 25 is a cross-sectional view of the laminate 205 perpendicular to the medium facing surface S (that is, FIG. 23 is an enlarged view of the laminate 205)
It is. The spin valve film is basically made of, for example, PtMn.
(Platinum-manganese alloy) antiferromagnetic layer 251, for example, pinned layer 2 which is a magnetic layer made of Co (cobalt)
52, a nonmagnetic metal layer 253 made of, for example, Cu (copper);
For example, a free layer 254 made of NiFe (permalloy)
And a multilayer film in which four layers are sequentially laminated. When the pinned layer 252 and the antiferromagnetic layer 251 are laminated and heat-treated at, for example, 250 degrees Celsius, the pinned layer 252 is subjected to an exchange anisotropic magnetic field due to exchange coupling at the interface between the pinned layer 252 and the antiferromagnetic layer 251. Is fixed, for example, in the direction indicated by Y in the figure. Since the free layer 254 is separated from the antiferromagnetic layer 251 by the nonmagnetic metal layer 253, its magnetization direction is not fixed and changes with an external magnetic field.

The reproduction of information using such a spin valve film, that is, the detection of a signal magnetic field from a magnetic recording medium is performed as follows. First, the pinned layer 252,
A detection current (sense current), which is a DC constant current, flows through the nonmagnetic metal layer 253 and the free layer 254, for example, in a direction indicated by X in the drawing. Upon receiving a signal magnetic field from the magnetic recording medium, the direction of magnetization of the free layer 254 changes. The electric resistance changes depending on the relative angle between the magnetization direction of the free layer 254 and the (fixed) magnetization direction of the pinned layer 252, and information is detected as a voltage change accompanying the change.

Here, generally, the medium facing surface S of the MR element
The distance from to the opposite surface is MR height (MR-H)
is called. In the case of an MR element using a spin valve film, the distance from the medium facing surface S of the free layer to the opposite surface determines the MR height. As shown in FIG. 25, in the conventional laminate 205, the antiferromagnetic layer 251 and the pinned layer 2
The distance from the medium facing surface to the opposite surface of the non-magnetic metal layer 253 and the free layer 254 is substantially the same.

The reproduction track width Tw of the MR element is:
It is getting smaller with higher recording density. Accordingly, the MR height of the MR element tends to decrease. For example, when the track width of the magnetic recording medium is 1 μm, the reproduction track width of the MR element is 1 μm and the MR height is 0.6 μm. On the other hand, when the track width of the magnetic recording medium is 0.5 μm, the reproduction track width of the MR element is 0.5 μm.
At μm, the MR height is 0.3 μm.

[0013]

As described above, the miniaturization of the MR element is progressing. However, with the miniaturization, the following problem occurs due to the heat generated in the MR element.
That is, the heat generated in the MR element is radiated to the upper and lower shield layers (the shield layers 203 and 207 in FIG. 23) via the upper and lower shield gap layers. However, M
When the reproduction track width of the R element and the MR height become smaller,
The heat radiation area of the MR element (that is, the product of the reproduction track width and the MR height) is significantly reduced. Such heat generation of the MR element due to the reduction of the heat radiation area causes electromigration (a phenomenon in which metal atoms move in a conductor to form local voids) and interlayer diffusion. as a result,
There is a problem that the life of the MR element is shortened.

It should be noted that JP-A-6-223331 and JP-A-10-222816 disclose that layers around the MR element (shield layer, insulating layer, substrate, etc.) are made of a material having high thermal conductivity. A technology for efficiently dissipating heat generated in an MR element has been disclosed. However, when the heat dissipation area of the MR element is reduced with the miniaturization of the MR element described above, even if the thermal conductivity of the layer around the MR element is increased, the improvement of the heat dissipation ability cannot be expected much.

The present invention has been made in view of such a problem, and an object of the present invention is to provide a magnetoresistive element, a thin-film magnetic head, and a method of manufacturing the same, which can enhance the heat radiation capability.

[0016]

According to the present invention, there is provided a magnetoresistive element comprising: a magnetic separation layer; a soft magnetic layer formed on one surface of the magnetic separation layer and having a magnetization direction freely changed by an external magnetic field; A ferromagnetic layer formed on the other surface of the separation layer, and an antiferromagnetic layer formed on a surface of the ferromagnetic layer opposite to the surface in contact with the magnetic separation layer; , The ferromagnetic layer and the antiferromagnetic layer are configured such that one end surface forms a surface facing an external magnetic field, and the distance from the one end surface to the opposite surface of the antiferromagnetic layer is at least the soft magnetic layer. It is configured to be larger than the distance from the one end face to the opposite face.

In the magnetoresistive element of the present invention, the electric resistance changes according to the change in the magnetization direction of the free layer due to an external magnetic field (for example, a signal magnetic field from a recording medium or the like). Magnetic information is detected based on the output. Joule heat generated by a detection current (sense current) flowing through the magnetoresistive element is radiated through the antiferromagnetic layer having a larger distance from the one end face to the opposite face.

In the magnetoresistive element of the present invention, the difference between the distance from the one end face of the antiferromagnetic layer to the opposite face and the distance from the one end face of the soft magnetic layer to the opposite face is: The thickness is preferably 0.05 μm or more and 1.0 μm or less. If this difference in distance is less than 0.05 μm,
There is almost no improvement in the heat radiation effect, and when it is larger than 1.0 μm, the positive and negative asymmetry of the read output increases.

In the magnetoresistive element according to the present invention, the surfaces of the soft magnetic layer, the magnetic separation layer, the ferromagnetic layer and the antiferromagnetic layer opposite to the one end face are inclined with respect to the one end face. Is also good. By forming such an inclination, the above-described configuration in which the distance from the one end surface of the antiferromagnetic layer to the opposite surface is at least larger than the distance from the one end surface of the soft magnetic layer to the opposite surface is relatively simple. Can be obtained.

In the magnetoresistive element according to the present invention, the surface of the soft magnetic layer opposite to the one end surface is a surface parallel to the one end surface, and the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer The opposite side of the one end face of the layer may be inclined with respect to the one end face. If the end faces of the soft magnetic layer are perpendicular, the MR height can be determined more accurately.

The magnetoresistive element of the present invention is a thin-film magnetic head having a magnetoresistive element. The magnetoresistive element has a magnetic separation layer and an external magnetic field formed on one surface of the magnetic separation layer. A soft magnetic layer in which the magnetization direction changes freely, a ferromagnetic layer formed on the other surface of the magnetic separation layer,
The ferromagnetic layer includes an antiferromagnetic layer formed on the surface of the ferromagnetic layer opposite to the surface in contact with the magnetic separation layer, and one end surface of the soft magnetic layer, the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer is recorded. A surface facing the medium is formed, and the distance from the one end surface of the antiferromagnetic layer to the opposite surface is at least larger than the distance from the one end surface of the soft magnetic layer to the opposite surface.

Further, the thin-film magnetic head of the present invention may be provided with two magnetic shield layers disposed so as to face each other with the magnetoresistive effect element interposed therebetween and for magnetically shielding the magnetoresistive effect element. Joule heat generated in the magnetoresistive film is transmitted to one magnetic shield film through the antiferromagnetic layer.

Also, in the thin-film magnetic head of the present invention, a portion of the side facing the recording medium is magnetically connected to each other and includes a magnetic pole portion facing each other via the gap layer. And two thin-film coils disposed between the two magnetic layers. When a current is passed through the coil, a magnetic field (in the direction traversing the gap layer) is generated in the magnetic pole portion,
Information is written to the magnetic recording medium by this magnetic field.

The method for manufacturing a magnetoresistive element of the present invention comprises:
Forming a laminated body including an antiferromagnetic layer, a ferromagnetic layer, a magnetic separation layer, and a soft magnetic layer on a substrate, wherein the distance from one end surface to the opposite surface of the antiferromagnetic layer is at least ( Patterning the stack to be greater than the distance from one end face (on the same side as the one end face of the antiferromagnetic layer) to its opposite face. According to this manufacturing method, the antiferromagnetic layer, the ferromagnetic layer, the magnetic separation layer, and the soft magnetic layer
A laminate formed in this order is obtained.

According to the method of manufacturing a magnetoresistive element of the present invention, an antiferromagnetic layer having a large distance from the one end face to the opposite face (at least larger than the soft magnetic layer) is formed. Joule heat generated by the current flowing in the laminate is radiated through the antiferromagnetic layer.

In the method of manufacturing a magnetoresistive element of the present invention, an ion milling method may be used in the patterning step. In addition, by adjusting at least one of the incident angle of ions or the thickness of the resist mask in the ion milling method, the inclination angle of the inclined surface of the laminate may be controlled.

The method of manufacturing a thin film magnetic head according to the present invention is a method of manufacturing a thin film magnetic head having a magnetoresistive effect element, wherein the step of forming the magnetoresistive effect element comprises forming an antiferromagnetic layer on a substrate. Forming a laminate including a ferromagnetic layer, a magnetic separation layer, and a soft magnetic layer, wherein the distance from the one end surface to the opposite surface of the antiferromagnetic layer is at least one of the soft magnetic layer And a step of patterning the stacked body so as to be larger than a distance from one end face (on the same side as the end face) to the opposite face.

According to the method of manufacturing a thin film magnetic head of the present invention,
Forming a first magnetic shield layer, forming a first shield gap layer on the first magnetic shield layer, and forming a magnetoresistive element on the first shield gap layer And a step of forming a second shield gap layer on the magnetoresistive element, and a step of forming a second magnetic shield layer on the second shield gap layer.

[0029]

Embodiments of the present invention will be described below in detail with reference to the drawings.

[First Embodiment] Referring to FIGS. 1 to 16, an MR element as a magnetoresistive element according to a first embodiment of the present invention and a thin film magnetic head using the same will be described. Will be described.

Configuration of MR Element and Composite Head FIG. 1 is a sectional view showing a basic configuration of a composite head 100 according to the first embodiment. The composite head 100 has a recording head unit 101 for recording information on a magnetic recording medium such as a hard disk, and a reproducing head unit 102 for reproducing information on a magnetic recording medium. Composite head 10
0 is an end surface (or an air bearing surface; ABS) S facing the magnetic recording medium, and is referred to as a “surface facing an external magnetic field” or “surface” in the present invention. Surface facing the recording medium ". In FIG. 1, the moving direction of the magnetic recording medium is indicated by an arrow Z, and the direction of the track width of the magnetic recording medium (that is, the direction of the reproducing track width of the composite head) is indicated by an arrow X.
It is represented by In addition, the magnetic recording medium and the composite head 10
The direction in which 0 is opposed is represented by an arrow Y.

The composite head 100 is made of, for example, Al ₂ O _3.
It has a substrate 1 made of TiC (Altic).
An insulating layer 2 made of, for example, Al ₂ O ₃ (alumina) and having a thickness of 2 to 10 μm, and a lower shield layer 3 made of a magnetic material such as NiFe (permalloy) having a thickness of 1 to ₃ μm are formed on the base 1. It is laminated. On the lower shield layer 3, Al ₂ O ₃ or AlN (aluminum nitride)
A lower shield gap layer 4 and an upper shield gap layer 6 having a film thickness of 10 to 100 nm are formed.

Between the lower shield gap layer 4 and the upper shield gap layer 6, a laminated body 5 which is a spin valve film is provided.
Is embedded therein (FIG. 2). Ni—Fe (permalloy) is formed on the upper shield gap layer 6.
An upper shield layer and lower magnetic pole (hereinafter, referred to as an upper shield layer) 9 having a film thickness of 1 to 4 μm and formed of a magnetic material such as the above is used for both the reproducing head unit 102 and the recording head unit 101.

On the upper shield layer 9, for example, Al ₂ O
A recording gap layer 10 having a thickness of 0.1 to 0.5 μm made of an insulating film such as ₃ is formed. On the recording gap layer 10, a first layer thin film coil 12 (2 to 3 μm in thickness) for a recording head is interposed via a photoresist layer 11 having a thickness of 1.0 to 5.0 μm. A covering photoresist layer 13 is formed. On the photoresist layer 13, a second-layer thin-film coil 14 (thickness: 2 to 3 μm) and a photoresist layer 15 covering the second-layer thin film coil 14 are formed. In this embodiment, the example in which the number of the thin film coils is two is described, but the total number of the thin film coils may be one or three or more.

An upper magnetic pole 16 having a thickness of about 3 μm and made of a magnetic material for a recording head, for example, NiFe (permalloy) or FeN, which is a high saturation magnetic flux density material, is provided so as to cover the photoresist layers 11, 13 and 15. Is formed.
Although not shown in FIG. 1, the upper magnetic pole 16 is covered with an overcoat layer (overcoat layer 17 in FIG. 9) made of, for example, Al ₂ O ₃ and having a thickness of 20 to 30 μm.

The lower shield layer 3, the lower shield gap layer 4, the MR element 50, the upper shield gap layer 6, and the upper shield layer 9 form a reproducing head for detecting information on a magnetic recording medium (ie, a signal magnetic field from the magnetic recording medium). Part 10
2. The reproducing head unit 102 detects a change in electric resistance generated in the MR element 50 by a signal magnetic field from a magnetic recording medium.

An upper magnetic shield part (also a lower magnetic pole)
The recording gap layer 10, the coils 12, 14 and the upper magnetic pole 16 constitute a recording head unit 101 for writing information on a magnetic recording medium. The recording head unit 101 causes upper and lower magnetic poles 16, 9 by the current flowing through the coils
A magnetic flux generated in the vicinity of the recording gap layer 10 between the magnetic poles 16 and 9 magnetizes the magnetic layer of the magnetic recording medium.

The lower shield layer 3 corresponds to a specific example of "first shield layer" in the present invention. The upper shield layer 9 corresponds to a specific example of “second shield layer” in the present invention. The upper shield layer 9 and the lower shield layer 3 correspond to a specific example of “two magnetic shield layers” in the present invention. The shield gap layers 4 and 8 correspond to specific examples of “first shield gap layer” and “second shield gap layer” in the present invention, respectively. The lower magnetic pole (upper shield layer) 9 and the upper magnetic pole 16 correspond to a specific example of “two magnetic layers” in the present invention, and include the lower magnetic pole 9, the upper magnetic pole 16, the thin film coils 12 and 14, and the recording gap layer 10. The portion corresponds to a specific example of “inductive magnetic transducer” in the present invention.

FIG. 2 is a diagram showing the MR element 50 including the laminated body 5, and shows a cross section (II-II cross section in FIG. 1) parallel to the medium facing surface S of the composite head 100. The laminated body 5 of the MR element 50 of the present embodiment has an antiferromagnetic layer 51 made of, for example, PtMn (platinum-manganese), for example, Co (cobalt) on the lower shield gap layer 4.
Layer 52 which is a magnetic layer made of, for example, Cu (copper)
A nonmagnetic metal layer 53 made of, for example, a free layer 54 made of NiFe (permalloy) is sequentially laminated.

When the pinned layer 52 and the antiferromagnetic layer 51 are stacked and heat-treated at, for example, 250 ° C., the exchange coupling at the interface between the pinned layer 52 and the antiferromagnetic layer 51 causes the magnetization direction of the pinned layer 52 to change. Is fixed. In the present embodiment, the direction of magnetization of pinned layer 52 is fixed in the Y direction in FIG.

On both sides of the laminate 5 in the X direction in FIG.
A bias application film is provided for aligning the magnetization directions of the free layer 54 to suppress generation of noise (so-called Barkhausen noise). In this embodiment, the bias applying film is composed of two layers of bias ferromagnetic layers 55a and 55b and bias antiferromagnetic layers 56a and 56b laminated on the bias ferromagnetic layers 55a and 55b. I have. The exchange coupling at the interface between the bias ferromagnetic layers 55a and 55b and the bias antiferromagnetic layers 56a and 56b generates a bias magnetic field for the free layer 54. In this embodiment, a bias magnetic field in the X direction in FIG. 2 is applied to the free layer 54.

Here, the antiferromagnetic layer 51 corresponds to a specific example of the “antiferromagnetic layer” in the present invention, and the pinned layer 52 corresponds to a specific example of the “ferromagnetic layer” in the present invention. Further, the nonmagnetic metal layer 53 is the “magnetic separation layer” in the present invention.
The free layer 54 corresponds to a specific example of the “soft magnetic layer” in the present invention.

FIG. 3 is a sectional view of the laminate 5 taken along the line III-III in FIG.
FIG. 3 is a sectional view taken along a line III, and shows a section perpendicular to a medium facing surface S. In the medium facing surface S of the multilayer body 5, one end (the left end in FIG. 3) of each of the antiferromagnetic layer 51, the pinned layer 52, the nonmagnetic metal layer 53, and the free layer 54 coincides with the medium facing surface S. . On the other hand, the medium facing surface S of the laminate 5
The end surface on the opposite side (the right end surface in FIG. 3) is a tapered surface 5A inclined with respect to the medium facing surface S, and includes a free layer 54, a nonmagnetic metal layer 53, a pinned layer 52, and an antiferromagnetic layer. The distance from the medium facing surface S to the opposite surface increases in the order of the layer 51. More specifically, the distance D1 from the medium facing surface S to the opposite surface of the antiferromagnetic layer 51 on the side opposite to the free layer 54 (the lower surface in FIG. 3) and the opposite side of the free layer 54 to the antiferromagnetic layer 51 The difference (D2) from the distance D2 from the medium facing surface S to the opposite surface (the upper surface in FIG. 3)
1-D2) is 0.05 μm to 1 μm. The distance D from the medium facing surface S of the free layer 54 to the opposite surface thereof.
2 corresponds to the MR height.

The method for manufacturing a composite head Next, with reference to FIGS. 4 to 15, combined head 100
A method of manufacturing the device will be described. 4 to 9 and FIG. 12B show cross sections perpendicular to the medium facing surface S. FIGS. 10, 11, 12A, 13 and 14 show enlarged cross sections of the composite head portion parallel to the medium facing surface. FIG. 15 shows the composite head 1
00 shows a plan configuration.

In the manufacturing method according to the present embodiment, first,
As shown in FIG. 4, for example on the Al ₂ O ₃ · TiC substrate 1 made of (AlTiC), for example, Al ₂ O ₃ insulating layer 2 made of (alumina), deposited to a thickness of approximately 2~10μm I do.

Next, a lower shield layer 3 for a reproducing head made of a magnetic material is formed to a thickness of 1 to 3 μm on the insulating layer 2 by, for example, a plating method. Next, on the lower shield layer 3, for example, Al ₂ O ₃ or AlN
A lower shield gap layer 4 as an insulating layer is formed by sputtering to a thickness of 00 nm.

Next, on the lower shield gap layer 4, a laminated film 5 'for forming the laminated body 5 is formed to a thickness of several tens nm. Specifically, as shown in FIG. 10 on an enlarged scale, an antiferromagnetic layer 51,
The pinned layer 52, the nonmagnetic metal layer 53, the free layer 54, and the protective layer 58 are laminated in this order by a sputtering method to form a laminated film 5 '.

Here, the antiferromagnetic layer 51 is made of, for example, PtM
It is formed to a thickness of about 20 nm using a material such as n (platinum-manganese) or NiMn (nickel-manganese).
The pinned layer 52 is formed to a thickness of about 2 nm using a material such as Co (cobalt). Non-magnetic metal layer 53
Is formed to a thickness of 2.5 nm using a material such as Cu (copper). The free layer 54 is formed to a thickness of 8 nm using a material such as NiFe (permalloy). In FIG. 10, the antiferromagnetic layer 51, the pinned layer 52,
The thicknesses of the nonmagnetic metal layer 53, the free layer 54, and the protective layer 58 are exaggerated as compared with the thicknesses of the other layers.

The protective layer 58 is made of Ta, Nb, Mo, Zr,
Hf, Cu, Al, Rh, Ru, Pt, RuRhMn,
A single-layer film of one material selected from PtMn, PtMnRh and TiW, or Ta / PtMn, Ta / C
u, Ta / Al, Ta / Ru, TiW / Cu, TiW /
One two-layer film selected from Rh and TiW / Ru is used (note that “/” between elements indicates that both elements are stacked).

Next, as shown in FIGS. 5 and 11,
A photoresist pattern 6a is selectively formed at a position on the stacked film 5 'where the stacked body 5 is to be formed. At this time, the photoresist pattern 6a has, for example, a T-shaped cross section so that lift-off described later can be easily performed.

Next, the laminated film 5 ′ is etched using the photoresist pattern 6 a as a mask to form the antiferromagnetic layer 5 ′.
1, pinned layer 52, non-magnetic metal layer 53 and free layer 5
The pattern of the laminated body 5 made of 4 is formed.

More specifically, FIGS. 12A and 12B
As shown in FIG. 5, the laminated film 5 'is etched obliquely by an ion milling method using, for example, Ar (argon) using the photoresist pattern 6a as a mask, and the end face on the side opposite to the medium facing surface S is etched. Then, a tapered surface 5A is formed. Here, the taper angle θ is controlled by adjusting at least one of the ion incident angle α and the thickness of the photoresist pattern t. It is desirable that the ion incident angle α be adjusted in the range of 10 to 60 degrees, and the thickness t of the photoresist pattern 6a be adjusted in the range of 0.5 to 5.0 μm. For example, if the incident angle α of the ion is 10
When the thickness of the photoresist pattern 6a is 3 μm, the taper angle θ of the tapered surface 5A can be set to 15 degrees. The greater the thickness of the photoresist pattern 6a and the greater the incident angle α of ions, the smaller the taper angle θ.

Next, as shown in FIG. 13, the ferromagnetic layers 55a and 55b for bias and the antiferromagnetic layers 56a and 56b for bias for applying a bias magnetic field to the free layer 54 are provided on both sides of the laminated body 5. Laminate. Further, the electrode layers 7a and 7b are formed on the anti-ferromagnetic layers 56a and 56b for bias.
It is formed to a thickness of about 0 to 200 nm. The electrode layer 7 is formed as, for example, a laminated film of Ta (tantalum) and Au (gold), or a laminated film of Ti.W (titanium-tungsten alloy) and Ta.

The materials of the antiferromagnetic layer 56 for bias and the antiferromagnetic layer 51 of the laminated body 5 are Pt47 to Pt47.
PtMn having a composition of 52 at% and Mn of 48 to 53 at% (most preferably Pt 48 at% and Mn 52 at%);
Pt 33-52 at%, Mn 45-57 at%, Rh0
~ 17at% composition (most preferably Pt40at
%, Mn 51 at%, Rh 9%) PtMnRh, Ru
0 to 20 at%, Rh 0 to 20 at%, Mn 75 to 85
at% composition (most preferably Ru3 at%, Rh1
(5 at%, Mn 82 at%).

Next, by a lift-off process, the photoresist pattern 6a and the deposit D
(The materials for the bias ferromagnetic layer, the bias antiferromagnetic layer, and the lead conductor layer) are removed.

Next, as shown in FIGS. 6 and 14,
An upper shield gap layer 8 made of an insulating film such as AlN is formed to a thickness of about 10 to 100 nm so as to cover the lower shield gap layer 4 and the laminated body 5. Buried inside.

Next, on the upper shield gap layer 8, an upper shield layer / lower magnetic pole (hereinafter referred to as an upper shield layer) 9 made of a magnetic material and used for both the read head and the write head is approximately 1 in size. It is formed to a thickness of 4 μm.

Next, as shown in FIG. 7, a recording gap layer 10 made of an insulating film, for example, an Al ₂ O ₃ film is formed on the upper shield layer 9 to a thickness of 0.1 to 0.5 μm. And
On this recording gap layer 10, a photoresist layer 11 for determining the throat height is formed in a predetermined pattern with a thickness of about 1.0 to 2.0 μm. Next, a first-layer thin film coil 12 for an inductive recording head is formed on the photoresist layer 11 to a thickness of 2 to 3 μm. Next, a photoresist layer 13 is formed in a predetermined pattern so as to cover the photoresist layer 11 and the thin film coil 12. Next, a second-layer thin-film coil 14 is formed on the photoresist layer 13 to a thickness of 2 to 3 μm. next,
A photoresist layer 15 is formed in a predetermined pattern so as to cover the photoresist layer 13 and the coil 14. Here, the thin film coils 12, 14 correspond to the "thin film coil" in the present invention.

Next, as shown in FIG.
At a position behind (right side in FIG. 8) than 14,
In order to form a magnetic path, the recording gap layer 10 is partially etched to form an opening 10a. Next, the recording gap layer 10, the opening 10a, the photoresist layers 11, 1
An upper magnetic pole 16 made of a magnetic material for a recording head, for example, a high saturation magnetic flux density material of NiFe (permalloy) or FeN is formed to a thickness of about 3 μm so as to cover the magnetic heads 3 and 15. The upper magnetic pole 16 is in contact with the upper shield layer (lower magnetic pole) 9 at the opening 10 a behind the coils 12 and 14 and is magnetically connected thereto.

Next, as shown in FIG.
Is used as a mask, the recording gap layer 10 and the upper shield layer (lower magnetic pole) 9 are etched by ion milling. Next, an overcoat layer 17 made of, for example, Al ₂ O ₃ is formed on the upper magnetic pole 16 to a thickness of 20 to 30 μm.

Next, in order to fix (pin) the direction of the magnetic field of the pinned layer 52, the antiferromagnetic layer 51 and the pinned layer 5 are fixed.
2 and a bias antiferromagnetic layer 56a, 5b for generating a bias magnetic field.
A process for causing exchange coupling at each interface between the bias ferromagnetic layers 55a and 55b is performed.

The temperature at which exchange coupling can occur at the interface between the antiferromagnetic layer 51 and the pinned layer 52 (blocking temperature), the biasing antiferromagnetic layers 56a and 56b, and the biasing ferromagnetic layer 5
It is desirable that the temperatures at which exchange coupling can occur at the interface between 5a and 55b be different from each other. When the former is higher in temperature than the latter, the composite head 100 is moved to the former (the antiferromagnetic layer 51 and the pinned layer 52) using a chamber with a magnetic field generator or the like.
(Blocking temperature). Then, the composite head 100 is gradually cooled, and the antiferromagnetic layer 51 is cooled.
And when the blocking temperature of the pinned layer 52 is reached,
A magnetic field in a predetermined magnetization direction (Y direction in FIG. 2 or 3) is applied to the pinned layer 52. Thereby, the pinned layer 52
Is fixed.

Then, the temperature of the composite head 100 is controlled by the bias antiferromagnetic layers 56a and 56b and the bias ferromagnetic layer 5a.
When the temperature drops to the blocking temperature of 5a, 55b, a magnetic field in a predetermined magnetization direction (X direction in FIG. 2 or 3) is applied to the ferromagnetic layers for bias 55a, 55b.
Thereby, the magnetization directions of the bias ferromagnetic layers 55a and 55b are fixed. The bias ferromagnetic layers 55a and 55b whose magnetization directions are fixed form the bias ferromagnetic layers 5a and 55b.
A bias magnetic field is applied to the laminated body 5 sandwiched between 5a and 55b. If the blocking temperatures of the antiferromagnetic layer 51 and the pinned layer 52 are lower than the blocking temperatures of the biasing antiferromagnetic layers 56a and 56b and the biasing ferromagnetic layers 55a and 55b, the above-described operation order is reversed. become.

Finally, the slider is machined to form the medium facing surface S of the recording head and the reproducing head,
The composite head 100 is completed. As shown in FIG. 9, the structure in which the respective sidewalls of the upper magnetic pole 16, the write gap layer 10, and the upper shield layer (lower magnetic pole) 9 are formed in a self-aligned manner vertically is a trim (Trim) structure. Called. According to this trim structure, it is possible to prevent the effective track width from increasing due to the spread of the magnetic flux generated when writing in a narrow track.

FIG. 15 is a plan view of the composite head 100 manufactured as described above. In FIG. 15, the overcoat layer 17 is omitted. FIGS. 4 to 9 and FIG. 12B show cross sections taken along line AA ′ in FIG. 10, 11 and 12
(A), FIG. 13 and FIG.
It shows a cross section taken along line B ′.

Note that PtMn and NiMn used as the material of the antiferromagnetic layer 51 in the present embodiment have a CuAu-I type ordered crystal structure, and a heat treatment is required to generate exchange coupling. . On the other hand, when a compound having an irregular crystal structure such as FeMn (iron-manganese) is used as the antiferromagnetic layer 51, the pinned layer 52 and the antiferromagnetic layer 51 are used.
, The direction of magnetization of the pinned layer 52 is fixed, so that heat treatment is unnecessary. Similarly, as the biasing antiferromagnetic layers 56a and 56b, a compound having an irregular crystal structure such as FeMn can be used.

Operation of Composite Head Next, the operation (reproduction operation) of the composite head 100 thus configured will be described.

2 and 3, the magnetization direction of the pinned layer 52 is changed in the Y direction in the figures due to the exchange anisotropic magnetic field due to the exchange coupling at the interface between the pinned layer 52 and the antiferromagnetic layer 51 of the laminate 5. Fixed. The magnetization direction of the free layer 54 is determined by the bias ferromagnetic layers 5 arranged on both sides of the stacked body 5.
By the bias magnetic fields generated by 5a and 55b, they are aligned in the track width direction (X direction in the figure).

A detection current (sense current), which is a DC constant current, flows in the pinned layer 52, the nonmagnetic metal layer 53, and the free layer 54 through the electrode layers 7a and 7b in the X direction in the figure. When receiving a signal magnetic field from the magnetic recording medium, the direction of magnetization of the free layer 54 changes. The electric resistance changes according to the relative angle between the magnetization direction of the free layer 54 and the magnetization direction (fixed) of the pinned layer 52, and the change in the electric resistance is detected as a voltage change.

At this time, Joule heat is generated by the detection current flowing through the laminate 5. This Joule heat
The current is mainly generated when a current flows through the pinned layer 52, the nonmagnetic metal layer 53, and the free layer 54. This Joule heat is radiated from the antiferromagnetic layer 51 through the lower shield gap layer 4 and the lower shield layer 3.

In this embodiment, as described above, the distance from the medium facing surface S to the opposite surface of the free layer 54, the nonmagnetic metal layer 53, the pinned layer 52, and the antiferromagnetic layer 51 increases in this order. ing. That is, since the area of the antiferromagnetic layer 51 is larger than the area of the free layer 54,
The heat radiation ability is improved as compared with the case where the first and the free layer 54 have the same area.

Since the detection of the signal magnetic field is performed based on the fluctuation of the magnetization direction in the free layer 54, in order to cope with the high density of the magnetic recording medium, the MR element 50 is adjusted to the track width of the magnetic recording medium. , The reproduction track width and the MR height may be reduced. In the present embodiment, since the area of the antiferromagnetic layer 51 is larger than the area of the free layer 54,
Even if the free layer 54 is made small, the heat dissipation area can be secured by the antiferromagnetic layer 51. That is, the heat dissipation capability of the MR element can be improved while supporting high-density recording.

FIG. 16 shows the result of measuring the temperature rise of the MR element 50 at this time by applying a current of 4 to 8 mA to the MR element 50 of the present embodiment. Here, the distance D1 from the medium facing surface S to the opposite surface at the edge (lower surface in FIG. 3) of the antiferromagnetic layer 51 opposite to the free layer 54 in FIG. The distance D2 from the medium facing surface S to the opposite surface at the edge (upper surface in FIG. 3) opposite to the layer 51 was 0.5 μm. That is, the distance D1 from the medium facing surface S to the opposite surface at the edge of the antiferromagnetic layer 51 opposite to the free layer 54.
Of the free layer 54 and the distance D2 from the medium facing surface S to the opposite surface at the edge of the free layer 54 opposite to the antiferromagnetic layer 51 (D
1-D2) is 0.5 μm. In FIG. 16, for comparison, the distance from the medium facing surface S of the antiferromagnetic layer to the opposite surface is the same as the distance from the medium facing surface S of the free layer to the opposite surface (both 0.5 μm). ) Are also shown.

As shown in FIG. 16, a tapered surface 5A is provided on the end face of the laminated body 5, and the distance from the medium facing surface S of the antiferromagnetic layer 51 to the opposite surface is set to be equal to the medium facing surface S of the free layer 54. By increasing the distance to the opposite side, the temperature rise could be reduced by 25% to 30%.

FIG. 17 shows the free layer 54 of the antiferromagnetic layer 51.
Between the medium facing surface S and the opposite surface at the edge opposite to the antiferromagnetic layer 51 of the free layer 54, and the distance D2 from the medium facing surface S to the opposite surface at the edge of the free layer 54 opposite to the antiferromagnetic layer 51. FIG. 4 is a characteristic diagram showing a relationship between (D1−D2) and a temperature rise of an MR element. In FIG. 17, the temperature rise
It is expressed as a relative value to the temperature rise (° C.) when the tapered portion is not provided in the laminate 5, that is, when (D1−D2) is zero. Here, a DC constant current of 6 mA is applied to the laminate 5.

FIG. 17 shows the read output (voltage output) of the MR element 50 when the magnetic field (S and N) of the magnetic recording medium is switched with the composite head 100 facing the magnetic recording medium. The asymmetry (asymmetry) of the positive output and the negative output is shown. As shown in FIG. 18, a positive peak value V1 and a negative peak value V2 (V1 and V2 are absolute values) of the output waveform of the MR element 50 are asymmetry Asym.
Is defined as Asym = (V1−V2) / V1 × 100. Generally, in an MR element, it is required that the asymmetry be suppressed to within ± 10%.

As shown in FIG. 17, when the difference (D1-D2) of the distances is less than 0.05 μm, the heat radiation effect of the MR element 50 is hardly observed. On the other hand, if the distance difference (D1-D2) is larger than 1.0 μm, the asymmetry exceeds 10% (this is due to the effect of the magnetic field due to the detection current shunted to the tapered portion of the antiferromagnetic layer 51). Due to). Therefore, the distance D1 from the medium facing surface S to the opposite surface at the edge of the antiferromagnetic layer 51 on the side opposite to the free layer 54 is different from the distance D1 between the antiferromagnetic layer 51 and the free layer 54.
(D1−D2) between the distance D2 from the medium facing surface S to the opposite surface at the end edge on the opposite side from (D1−D2) is 0.05 μm to 1
μm is desirable.

As described above, according to the present embodiment, the distance from the medium facing surface S of the antiferromagnetic layer 51 is smaller than the distance from the medium facing surface S of the free layer 54 of the multilayer body 5 of the MR element 50 to the opposite surface. Since the distance to the surface is large, the MR height and the like of the MR element 50 can be reduced in accordance with the track width of the magnetic recording medium, and at the same time, the area of the antiferromagnetic layer 51 can be secured as much as necessary for heat dissipation. . That is, it is possible to cope with the increase in the density of the magnetic recording medium and at the same time, to enhance the heat radiation capability.

The Joule heat of the MR element 50 is particularly large at the center of the laminated body 5 in the reproduction track width direction.
In the present embodiment, since the distance from the medium facing surface S to the opposite surface of the antiferromagnetic layer 51 is increased, the antiferromagnetic layer 5
The heat generated in the central portion of the stacked body 5 can be efficiently radiated as compared with the case where the length in the reproduction track width direction is increased.

In the present embodiment, the free layer 54
Nonmagnetic metal layer 53, pinned layer 52 and antiferromagnetic layer 51
Since the tapered surface 5A is formed on the end face of the layered product on the side opposite to the medium facing surface S, a relatively simple method (such as a method of inclining the angle of incidence of ions in the ion milling method).
Accordingly, the distance from the medium facing surface S of the antiferromagnetic layer 51 to the opposite surface can be made larger than the distance from the medium facing surface S of the free layer 54 to the opposite surface.

[Second Embodiment] Next, a second embodiment of the present invention will be described.
An embodiment will be described.

FIG. 19 is a sectional view showing the structure of a laminated body of the MR element according to the second embodiment. The laminated film 105 of the MR element of the second embodiment is similar to that of the first embodiment.
For example, a 20 nm-thick antiferromagnetic layer 151 made of PtMn and a 2 nm-thick film made of Co, for example.
A non-magnetic metal layer 153 made of, for example, Cu and having a thickness of 2.5 nm, and a free layer 154 made of, for example, NiFe having a thickness of 8 nm, such as C
The protective layer 158 made of u is laminated.

In the second embodiment, the free layer 154
The end surface 154A on the side opposite to the medium facing surface S is
And a medium facing surface S of three layers of an antiferromagnetic layer 151, a pinned layer 152, and a nonmagnetic metal layer 153.
The end surface on the opposite side is a tapered surface 105A inclined with respect to the medium facing surface S. The difference (D1−) between the distance D1 from the medium facing surface S to the opposite surface at the edge of the antiferromagnetic layer 151 opposite to the free layer 154 and the distance D2 from the medium facing surface S to the opposite surface of the free layer 154. D2) is, for example, 0.05 μm to 1 μm. The configuration of the MR element according to the second embodiment other than the laminated body 105 is the same as the configuration of the MR element 50 according to the first embodiment (FIG. 2).

Next, a method of manufacturing the MR element according to the second embodiment will be described. As in the first embodiment,
For example, on the substrate 1 made of Al ₂ O ₃ · TiC, Al ₂ O _3, for example from consisting insulating layer 2, the lower shield layer 3 for a reproducing head made of a magnetic material, for example Al ₂ O ₃ or A
A lower shield gap layer 4 of 1N is sequentially laminated. Then, on the lower shield gap layer 4, the laminate 1
A multilayer film 5 'for forming the layer 05 is formed to a thickness of several tens of nm. Specifically, on the lower shield gap layer 4,
Antiferromagnetic layer 151, pinned layer 152, nonmagnetic metal layer 15
3. The free layer 154 and the protective layer 158 are laminated in this order by a sputtering method to form a laminated film 5 '.

Next, as shown in FIG. 20, the laminated film 5 '
A photoresist pattern 6a is selectively formed at a position where a laminated body 105 is to be formed on the substrate, and the laminated film 5 'is etched using the photoresist pattern 6a as a mask. Specifically, using the photoresist pattern 6a as a mask, the laminated film 5 'is etched by an ion milling method using, for example, Ar (argon).

The etching process of the laminated film 5 ′
It includes the following two steps. As shown in FIG.
When etching the free layer 154 and the protective layer 158, the ion incidence direction of the ion milling method is perpendicular to the film surface (that is, parallel to the medium facing surface S). Thus, the end surface 154A of the free layer 154 on the side opposite to the medium facing surface S becomes vertical. Free layer 154 and protective layer 1
When the etching of 58 is completed, the incident direction of the ions is inclined, and the remaining three layers (the non-magnetic metal layer 153 and the pinned layer 15) are formed.
2. A tapered surface 105A is formed on the antiferromagnetic layer 151).

Also in this case, similarly to the first embodiment, the ion incident angle α is adjusted in the range of 10 to 60 degrees, and the thickness t of the photoresist pattern 6a is adjusted in the range of 0.5 to 5.0 μm. It is desirable to adjust. For example, assuming that the incident angle α of the ions is 10 degrees and the thickness t of the photoresist pattern 6a is 3 μm, the taper angle θ of the tapered surface 105A is
Can be 15 degrees.

Thus, as shown in FIG. 21, the end faces of the free layer 154 and the protective layer 158 are not tapered, and the remaining three layers (the nonmagnetic metal layer 153 and the pinned layer 1) are not provided.
52, a tapered surface 105A can be formed on the antiferromagnetic layer 151). Subsequent steps are the same as those in the first embodiment. That is, the composite head is completed by the same steps as those shown in FIGS. 4 to 9 in the first embodiment.

In the composite head according to the second embodiment, since the area (radiation area) of the antiferromagnetic layer 151 is larger than the area of the free layer 154, the radiation efficiency is increased while the density of the magnetic recording medium is increased. Can be obtained, which is the same effect as in the first embodiment. Furthermore, in the present embodiment, one end face of the free layer 154 and the opposite face are parallel, so that the MR height can be determined more accurately.

Also, in the etching process of the laminate by the ion milling method, by changing the incident direction of ions between the processing of the free layer 154 and the processing of the remaining three layers, only the end face of the free layer 154 is made vertical. Tapers 105A can be formed on the end faces of the remaining three layers.

As described above, the present invention has been described with reference to some embodiments. However, the present invention is not limited to these embodiments, and various modifications are possible. For example, in each of the above embodiments, the surface of the MR element stack opposite to the medium facing surface is a tapered surface, but as shown in FIG.
5 (antiferromagnetic layer 351, pinned layer 352, nonmagnetic metal layer 353, free layer 354) by changing the distance from the medium-facing surface to the opposite surface to form a step-like structure. For this purpose, for example, each layer may be etched such that its end face is perpendicular to the substrate.

As the bias magnetic field application film, instead of the bias ferromagnetic films 55a and 55b and the bias antiferromagnetic films 56a and 56b (FIG. 2), a hard magnetic film (Hard M
agnet). Further, the free layer and the pinned layer may each be a laminated film in which a plurality of layers are laminated.

In each of the above embodiments, the case where the magnetoresistive effect element of the present invention is used for a composite type thin film magnetic head has been described. However, it is also possible to use the magnetoresistive effect element for a read-only thin film magnetic head. Further, the laminate may be laminated in the order of a free layer, a nonmagnetic metal layer, a pinned layer, and an antiferromagnetic layer from the substrate side. Further, the stacking order of the recording head and the reproducing head may be reversed.

In each of the above embodiments, the magnetic separation layer is a nonmagnetic metal layer (eg, Cu). However, an insulating layer may be used instead of the nonmagnetic metal layer. In this case, each of the above embodiments is replaced with a tunnel junction type magnetoresistive film (TMR).
Film).

Further, in addition to the thin-film magnetic head described in each of the above embodiments, the magnetoresistance effect element of the present invention
For example, the present invention can be applied to a sensor that detects a magnetic signal, a memory that stores a magnetic signal, and the like.

[0096]

As described above, claims 1 to 5
12. The thin film magnetic head according to claim 6, wherein:
According to the method of manufacturing a magnetoresistive element according to any one of Items 2 to 16, or the method of manufacturing a thin-film magnetic head according to any one of Claims 17 to 19, the antiferromagnetic layer (external magnetic field Since the distance from one end surface to the opposite surface is larger than the distance from one end surface of the soft magnetic layer to the opposite surface (facing the external magnetic field), the area of the antiferromagnetic layer is larger than the area of the soft magnetic layer. And the heat radiation ability is improved. Further, since the heat dissipation area can be secured by the antiferromagnetic layer even if the soft magnetic layer is made smaller, the heat dissipation capability of the magnetoresistive element can be improved while supporting high-density recording.

In particular, according to the magnetoresistive element according to the second aspect and the thin-film magnetic head according to the seventh aspect, the distance from the one end face (facing the external magnetic field) of the antiferromagnetic layer to the opposite face is different. The difference between the distance from one end surface (facing the external magnetic field) of the soft magnetic layer to the opposite surface is 0.05 μm or more and 1.0 μm or less.
m, the radiation effect can be surely obtained, and the positive and negative symmetry of the read output can be obtained.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a cross section perpendicular to a medium facing surface of a thin-film magnetic head according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a cross section of the MR element of the thin film magnetic head of FIG. 1 parallel to a medium facing surface.

FIG. 3 is a diagram illustrating a cross section perpendicular to a medium facing surface of the multilayer body of the MR element in FIG. 2;

FIG. 4 is a cross-sectional view for explaining one step in the method of manufacturing the thin-film magnetic head according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view for explaining a step following the step shown in FIG. 4;

FIG. 6 is a cross-sectional view for explaining a step following the step shown in FIG. 5;

FIG. 7 is a cross-sectional view for explaining a step following the step shown in FIG. 6;

FIG. 8 is a cross-sectional view for explaining a step following the step shown in FIG. 7;

FIG. 9 is a cross-sectional view for explaining a step following the step shown in FIG. 8;

FIG. 10 is a cross-sectional view for explaining one step in the method of manufacturing the thin-film magnetic head according to the first embodiment of the present invention, and is an enlarged view of a cross section parallel to the medium facing surface.

FIG. 11 is an enlarged cross-sectional view for explaining a step following the step shown in FIG. 10;

FIG. 12 is an enlarged sectional view for explaining a step following FIG. 11;

FIG. 13 is an enlarged sectional view for explaining a step following the step shown in FIG. 12;

FIG. 14 is an enlarged sectional view for explaining a step following the step shown in FIG. 13;

FIG. 15 is a plan view of the thin-film magnetic head according to the first embodiment of the present invention.

FIG. 16 is a characteristic diagram illustrating an experimental result of a heat radiation effect according to the first embodiment of the present invention.

FIG. 17 is a characteristic diagram illustrating experimental results of a heat radiation effect and asymmetry according to the first embodiment of the present invention.

FIG. 18 is a diagram illustrating the concept of asymmetry.

FIG. 19 is a diagram illustrating a cross section perpendicular to a medium facing surface of a stacked body of a thin-film magnetic head according to a second embodiment of the present invention.

20 is an enlarged cross-sectional view for explaining one step of the method for manufacturing the thin-film magnetic head of FIG.

FIG. 21 is an enlarged cross-sectional view for explaining a step following the step shown in FIG. 20.

FIG. 22 is a diagram illustrating an example of another laminating method of the composite head.

FIG. 23 is a diagram illustrating a cross-sectional configuration of a conventional thin-film magnetic head.

24 is a diagram illustrating a cross-sectional configuration of a stacked body of the MR element of the thin-film magnetic head of FIG.

FIG. 25 is a diagram illustrating a cross-sectional configuration of a stacked body of the MR elements of the thin-film magnetic head of FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... insulating layer, 3 ... lower shield layer, 4 ... lower shield gap layer, 5 ... laminated body, 5 '... laminated film, 50
... MR element, 51 ... Antiferromagnetic layer, 52 ... Pinned layer (ferromagnetic layer), 53 ... Non-magnetic metal layer (magnetic separation layer), 54 ... Free layer (soft magnetic layer), 55a, 55b ... Strong for bias Magnetic layers, 56a, 56b: antiferromagnetic layer for bias, 58 ...
Protective layer, 6a, 6b: photoresist pattern, 7: first electrode layer, 8: upper shield gap layer, 9: upper shield layer and lower magnetic pole, 10: recording gap layer, 11, 1
3, 15: photoresist layer, 16: upper magnetic pole, 17:
Overcoat layer, 18... Second electrode layer.

Claims (19)

[Claims] A magnetic separation layer, a soft magnetic layer formed on one surface of the magnetic separation layer, the magnetization direction of which is freely changed by an external magnetic field; and a strong magnetic layer formed on the other surface of the magnetic separation layer. A magnetic layer, and an antiferromagnetic layer formed on a surface of the ferromagnetic layer opposite to a surface in contact with the magnetic separation layer; the soft magnetic layer, the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer; The ferromagnetic layers are configured such that one end surfaces thereof form a surface facing an external magnetic field, and the distance from the one end surface of the antiferromagnetic layer to the opposite surface is at least the soft magnetic layer. Wherein the distance from the one end surface to the opposite surface is larger than the distance from the one end surface. 2. A difference between a distance from the one end surface of the antiferromagnetic layer to the opposite surface thereof and a distance from the one end surface of the soft magnetic layer to the opposite surface thereof is not less than 0.05 μm and not more than 1.0 μm.
2. The magnetoresistance effect element according to claim 1, wherein m is equal to or less than m. 3. A surface of the soft magnetic layer, the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer opposite to the one end surface,
The magnetoresistance effect element according to claim 1, wherein the element is inclined with respect to the one end face. 4. A surface of the soft magnetic layer opposite to the one end surface,
The one end face of the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer, which is parallel to the one end face, is inclined with respect to the one end face. The magnetoresistance effect element according to claim 1 or 2. 5. The soft magnetic layer according to claim 1, wherein a protective layer is formed on a surface of the soft magnetic layer opposite to a surface in contact with the magnetic separation layer. The magnetoresistive effect element as described in the above. 6. A thin-film magnetic head including a magnetoresistive element disposed to face a recording medium, wherein the magnetoresistive element is formed on a magnetic separation layer and on one surface of the magnetic separation layer. A soft magnetic layer whose magnetization direction is freely changed by an external magnetic field; a ferromagnetic layer formed on the other surface of the magnetic separation layer; and a surface of the ferromagnetic layer opposite to a surface in contact with the magnetic separation layer. The soft magnetic layer, the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer each have an end face facing the recording medium. Wherein the distance from the one end surface of the antiferromagnetic layer to the opposite surface is at least larger than the distance from the one end surface of the soft magnetic layer to the opposite surface. Thin film magnetic head. 7. The difference between the distance from the one end surface of the antiferromagnetic layer to the opposite surface thereof and the distance from the one end surface of the soft magnetic layer to the opposite surface thereof is 0.05 μm or more and 1.0 μm or less.
7. The thin-film magnetic head according to claim 6, wherein m is equal to or less than m. 8. A surface of the soft magnetic layer, the magnetic separation layer, the ferromagnetic layer and the antiferromagnetic layer opposite to the one end surface,
8. The thin film magnetic head according to claim 6, wherein the thin film magnetic head is inclined with respect to the one end face. 9. A surface of the soft magnetic layer opposite to the one end surface,
The one end face of the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer, which is parallel to the one end face, is inclined with respect to the one end face. The thin film magnetic head according to claim 6 or 7. 10. The device according to claim 6, further comprising: two magnetic shield layers disposed so as to face each other with the magnetoresistive effect element interposed therebetween and magnetically shielding the magnetoresistive effect element. A thin-film magnetic head according to claim 9. 11. Two magnetic layers each comprising at least one layer, each of which is magnetically coupled to each other, and includes a magnetic pole part whose part on the side facing the recording medium faces each other via a gap layer. The thin-film magnetic head according to any one of claims 6 to 10, further comprising: an inductive magnetic transducer having a thin-film coil disposed between the two magnetic layers. 12. A step of forming a laminated body including an antiferromagnetic layer, a ferromagnetic layer, a magnetic separation layer and a soft magnetic layer on a substrate, wherein a distance from one end face to the opposite face of the antiferromagnetic layer is At least a step of patterning the laminated body so as to be longer than a distance from an end face of the soft magnetic layer on the same side as the one end face to an opposite face of the soft magnetic layer. Method. 13. The method of manufacturing a magnetoresistive element according to claim 12, wherein in the patterning step, patterning is performed such that an opposite surface is inclined with respect to one end surface of the stacked body. 14. The method according to claim 13, wherein an ion milling method is used in the patterning step. 15. The method according to claim 14, wherein in the ion milling method, at least one of an incident angle of the ions and a thickness of the resist mask is adjusted to control an inclination angle of the inclined surface of the laminate. A method for manufacturing the magnetoresistive element according to the above. 16. In the patterning step, an incident angle of ions at the time of ion milling of the soft magnetic layer is perpendicular to a surface of the stacked body, and the magnetic separation layer, the ferromagnetic layer, and the antiferromagnetic layer. The method of manufacturing a magnetoresistive element according to claim 15, wherein the angle of incidence of ions during ion milling of the magnetic layer is inclined with respect to the surface of the laminate. 17. A method for manufacturing a thin-film magnetic head having a magnetoresistive element, wherein the step of forming the magnetoresistive element comprises: forming an antiferromagnetic layer, a ferromagnetic layer, and a magnetic separation layer on a substrate. And a step of laminating the soft magnetic layer, wherein the distance from the one end face to the opposite face of the antiferromagnetic layer is at least, from the end face of the soft magnetic layer on the same side as the one end face to the opposite face. So that it is larger than the distance
Patterning the laminate. A method for manufacturing a thin-film magnetic head, comprising: 18. A step of forming a first magnetic shield layer, a step of forming a first shield gap layer on the first magnetic shield layer, and a step of forming a first shield gap layer on the first magnetic shield layer. A step of forming a magnetoresistive element; a step of forming a second shield gap layer on the magnetoresistive element; and a step of forming a second magnetic shield layer on the second shield gap layer 2. The method according to claim 1, further comprising:
8. The method for manufacturing a thin-film magnetic head according to 7. 19. Two magnetic layers each comprising at least one layer, each magnetically coupled to each other, and including a magnetic pole portion having a part facing the recording medium and facing each other via a gap layer. 19. The method according to claim 17, further comprising: forming an inductive magnetic transducer having a thin-film coil disposed between the two magnetic layers. Of manufacturing a thin film magnetic head.