JP2000345398A - Deposition method - Google Patents
Deposition methodInfo
- Publication number
- JP2000345398A JP2000345398A JP11153985A JP15398599A JP2000345398A JP 2000345398 A JP2000345398 A JP 2000345398A JP 11153985 A JP11153985 A JP 11153985A JP 15398599 A JP15398599 A JP 15398599A JP 2000345398 A JP2000345398 A JP 2000345398A
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- Prior art keywords
- film
- plating
- solution
- copper
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Electroplating Methods And Accessories (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電気メッキや無電
解メッキ、電気泳動被膜などのように、溶液中に存在す
るイオンなどの成分を析出させて成膜する方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a film by depositing components such as ions existing in a solution, such as electroplating, electroless plating, and electrophoretic coating.
【０００２】[0002]
【従来の技術】従来から溶液中に溶けているものを析出
させて成膜する技術が存在しており、その代表的なもの
が金属イオンを析出させて金属膜を形成するメッキであ
る。また、近年は、金属以外の物質を溶液から析出させ
て成膜する技術開発が開発され、種々の特性を有する膜
が成膜できるようになってきている。2. Description of the Related Art Conventionally, there has been a technique for depositing a substance dissolved in a solution to form a film, and a typical example thereof is plating for depositing metal ions to form a metal film. In recent years, technology development for depositing a substance other than metal from a solution to form a film has been developed, and a film having various characteristics can be formed.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来の成膜用
の液種は充分でなく、高品質の膜を得ようとした場合、
スパッタリングや蒸着などのドライ成膜で得られる膜の
ような満足のいく特性を有するものが得られるに至って
いない。これは、液を用いた成膜の場合、溶液に対して
制御可能なパラメータが温度や電界などであって、少な
いことによる。However, the conventional liquid type for film formation is not sufficient, and when a high quality film is to be obtained,
Films having satisfactory characteristics such as films obtained by dry film formation such as sputtering and vapor deposition have not been obtained. This is because, in the case of film formation using a liquid, parameters that can be controlled with respect to the solution are temperature and electric field and are small.
【０００４】本発明は、前記従来技術の欠点を解消する
ためになされたもので、成膜用の液種を豊富にするとと
もに、成膜した膜の特性を向上させることを目的として
いる。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks of the prior art, and has as its object to enrich the kinds of liquids for film formation and to improve the characteristics of the film formed.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明に係る成膜方法は、溶液中に存在する成分
を基材の表面に析出させて成膜する成膜方法において、
前記溶液を脱ガスしたのち、前記成膜する膜の種類また
は成膜する膜の特性に応じて予め定めたガス種を前記溶
液に溶解させつつ、または溶解させたのちに前記成分を
析出させることを特徴としている。Means for Solving the Problems To achieve the above object, a film forming method according to the present invention is directed to a film forming method for forming a film by depositing a component present in a solution on a surface of a substrate.
After degassing the solution, dissolving a gas species predetermined according to the type of the film to be formed or the characteristics of the film to be formed in the solution, or precipitating the component after dissolving. It is characterized by.
【０００６】このように構成した本発明は、溶存酸素な
どを含まない液種を得ることができるとともに、成膜し
た膜中に酸素が取り込まれないため、例えば金属の膜の
場合、導電率や延性、展性を向上することができる。す
なわち、例えば電気メッキの場合、溶液であるメッキ液
中には一般に空気が溶け込んでいる。このため、シアン
化銅浴、硫酸銅浴などによって配線用の銅メッキを行な
った場合、メッキ液中に溶存している酸素が成膜された
銅の内部に取り込まれ、導電率が真空蒸着やスパッタリ
ングなどによって得た銅皮膜に比較して大きく劣る。し
かし、メッキ液を脱ガスすると、無酸素状態のメッキ液
が得られるために成膜された銅皮膜中には酸素が存在せ
ず、導電率が大きくなって電気的特性が向上するととも
に、延性や展性が大きくなって機械的特性も向上する。According to the present invention constructed as described above, a liquid type containing no dissolved oxygen or the like can be obtained, and oxygen is not taken into a formed film. Ductility and malleability can be improved. That is, for example, in the case of electroplating, air is generally dissolved in a plating solution which is a solution. Therefore, when copper plating for wiring is performed using a copper cyanide bath, a copper sulfate bath, or the like, oxygen dissolved in the plating solution is taken into the inside of the formed copper, and the conductivity is reduced by vacuum deposition or the like. It is significantly inferior to a copper film obtained by sputtering or the like. However, when the plating solution is degassed, an oxygen-free plating solution is obtained.Therefore, oxygen is not present in the formed copper film, the electrical conductivity is increased, the electrical characteristics are improved, and the ductility is improved. In addition, the malleability increases and the mechanical properties also improve.
【０００７】また、本発明に係る成膜方法は、溶液中に
存在する成分を基材の表面に析出させて成膜する成膜方
法において、前記成膜する膜の種類または成膜する膜の
特性に応じて予め定めたガス種を前記溶液に溶解させつ
つ、または溶解させたのちに前記成分を析出させること
を特徴としている。Further, according to the film forming method of the present invention, in the film forming method of forming a film by depositing a component present in a solution on the surface of a substrate, the type of the film to be formed or the film to be formed is The present invention is characterized in that the components are deposited while dissolving a gas species predetermined according to characteristics in the solution or after dissolving them.
【０００８】一般に、溶液中には空気が溶け込んでお
り、溶液中の成分を析出させて成膜した場合、溶液中に
溶存している酸素や窒素が成膜した膜の中に取り込まれ
る。このため、溶液を用いて成膜した膜は、膜中に存在
する酸素や窒素の影響を受けることになり、膜の性質、
特性を望むように制御することが困難である。In general, air is dissolved in a solution, and when a film is formed by precipitating components in the solution, oxygen and nitrogen dissolved in the solution are taken into the formed film. Therefore, a film formed using a solution is affected by oxygen and nitrogen existing in the film, and the properties of the film,
It is difficult to control the properties as desired.
【０００９】そこで、本発明は、溶液を一度脱ガスして
溶存している酸素や窒素を除去したのち、所望のガスを
溶解して成膜する。これにより、溶解させたガスが成膜
した膜中に取り込まれるため、従来では得ることができ
ない性質、特性を有する膜を成膜することができる。し
たがって、成膜するための液種を豊富にすることができ
る。Therefore, according to the present invention, after the solution is once degassed to remove dissolved oxygen and nitrogen, a desired gas is dissolved to form a film. Thus, the dissolved gas is taken into the formed film, so that a film having properties and characteristics that cannot be obtained conventionally can be formed. Therefore, it is possible to enrich the liquid type for forming a film.
【００１０】溶解するガス種としては、例えばより還元
度の高い膜を得ようとする場合、脱ガスした溶液中に水
素を溶解するとよい。また、逆により酸化度の高い膜を
必要とする場合、酸素を溶解する。なお、この発明にお
いては、酸素には、その同位体であるオゾンを含む。こ
のオゾンを溶解することにより、一層酸化度の高い膜が
得られる。As a gas species to be dissolved, for example, when a film having a higher degree of reduction is to be obtained, hydrogen is preferably dissolved in the degassed solution. Conversely, when a film having a high degree of oxidation is required, oxygen is dissolved. In the present invention, oxygen includes its isotope, ozone. By dissolving the ozone, a film having a higher oxidation degree can be obtained.
【００１１】また、膜を形成する基材を回転させて成膜
すると、成膜した膜の全体にわたって容易に厚さや特性
を一様にすることができ、品質の優れた膜を得ることが
できる。In addition, when the film is formed by rotating the substrate on which the film is formed, the thickness and characteristics can be easily made uniform throughout the formed film, and a film of excellent quality can be obtained. .
【００１２】[0012]
【発明の実施の形態】本発明に係る成膜方法の好ましい
実施の形態を、銅のメッキを例にして添付図面に従って
詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a film forming method according to the present invention will be described in detail with reference to the accompanying drawings, taking copper plating as an example.
【００１３】図１は、第１実施形態を説明するためのメ
ッキ装置の図である。図１において、メッキ浴１０の内
部に貯溜したメッキ液１２は、通常の電気メッキ用に調
整されたシアン化銅メッキ液、ピロリン酸銅メッキ液ま
たは硫酸銅メッキ液からなっている。そして、メッキ浴
１０の上部には、密閉蓋１４が設けてあって、メッキ浴
１０内を外気から遮断できるようにしてある。この密閉
蓋１４には、攪拌機１５が設けてあり、メッキ浴１０内
のメッキ液１２を攪拌できるようにしてある。FIG. 1 is a view of a plating apparatus for explaining a first embodiment. In FIG. 1, a plating solution 12 stored in a plating bath 10 is composed of a copper cyanide plating solution, a copper pyrophosphate plating solution, or a copper sulfate plating solution adjusted for normal electroplating. A sealing lid 14 is provided above the plating bath 10 so that the inside of the plating bath 10 can be shielded from the outside air. The sealing lid 14 is provided with a stirrer 15 so that the plating solution 12 in the plating bath 10 can be stirred.
【００１４】メッキ液１２には、陰極となる鋼板１６と
陽極となる銅電極１８とが浸漬してあり、基材である鋼
板１６に銅メッキができるようになっている。そして、
これらの鋼板１６と銅電極１８とは、直流電源２０の陰
極と陽極とに接続してある。また、メッキ浴１０の上部
には、排気管２２を介して吸引ポンプ２４が接続してあ
り、メッキ浴１０の内部を吸引排気できるようにしてあ
る。メッキ浴１０の底部には、ガス配管２７を介してオ
ゾン供給源２８が接続してある。そして、ガス配管２７
には、メッキ浴１０に供給するガス種であるオゾンの供
給量を制御する流量制御弁２９が設けてある。さらに、
メッキ浴１０の下部には、多孔板４０が配設してあっ
て、底部に供給されたオゾンをメッキ浴１０の全体に分
散できるようになっている。なお、図１に示した符号２
６は、排気管２２を開閉する弁である。A steel plate 16 serving as a cathode and a copper electrode 18 serving as an anode are immersed in the plating solution 12, so that the steel plate 16 serving as a base material can be plated with copper. And
These steel plate 16 and copper electrode 18 are connected to the cathode and anode of DC power supply 20. A suction pump 24 is connected to the upper part of the plating bath 10 via an exhaust pipe 22 so that the inside of the plating bath 10 can be suctioned and exhausted. An ozone supply source 28 is connected to the bottom of the plating bath 10 via a gas pipe 27. And the gas pipe 27
Is provided with a flow control valve 29 for controlling the supply amount of ozone, which is a gas species supplied to the plating bath 10. further,
A perforated plate 40 is provided below the plating bath 10 so that ozone supplied to the bottom can be dispersed throughout the plating bath 10. Note that reference numeral 2 shown in FIG.
Reference numeral 6 denotes a valve for opening and closing the exhaust pipe 22.
【００１５】鋼板１６の銅メッキは、次のようにして行
われる。The copper plating of the steel plate 16 is performed as follows.
【００１６】まず、所定の組成に調整したメッキ液１２
と鋼板１６、銅電極１８とをメッキ浴１０の内部に配置
したのち、密閉蓋１４によってメッキ浴１０の上部を覆
う。鋼板１６は、銅メッキをするための脱脂処理やエッ
チング処理などの前処理が施してある。そして、弁２６
を開放するとともに吸引ポンプ２４を作動し、メッキ浴
１０の内部を排気してメッキ液１２の脱ガスを行なう。
これにより、メッキ液１２に溶解している酸素、窒素な
どのガスが放出され、メッキ液１２が無酸素状態にな
る。First, a plating solution 12 adjusted to a predetermined composition is prepared.
After the steel plate 16 and the copper electrode 18 are arranged inside the plating bath 10, the upper portion of the plating bath 10 is covered with the sealing lid 14. The steel plate 16 has been subjected to a pre-treatment such as a degreasing treatment or an etching treatment for copper plating. And the valve 26
Is released and the suction pump 24 is operated to exhaust the inside of the plating bath 10 and degas the plating solution 12.
As a result, gases such as oxygen and nitrogen dissolved in the plating solution 12 are released, and the plating solution 12 becomes oxygen-free.
【００１７】その後、吸引ポンプ２４の作動を停止し、
流量制御弁２９を開いてオゾン供給源２８からオゾンを
メッキ浴１０に供給し、メッキ浴１０内のメッキ液１２
に所定量のオゾンを溶解する。そして、攪拌機１５によ
ってメッキ液１２を攪拌するとともに、直流電源２０に
よって鋼板１６と銅電極１８との間に直流電圧を印加す
る。これにより、メッキ液１２内にプラスイオンとして
存在している成分である銅イオンは、拡散と電気泳動現
象とによって、陰極となる鋼板１６側に移動して表面に
吸着し、鋼板１６から電子を受け取って金属銅として析
出する。一方、陽極である銅電極１８を構成している金
属銅は、直流電源２０からプラスの電荷を受け取って銅
イオンとなり、メッキ液１２中に溶け出す。そして、時
間が経過するのに従って鋼板１６の表面に銅が堆積して
成膜される。このとき、メッキ液１２には、オゾンを溶
解させてあるので、鋼板１６の表面に成膜された銅皮膜
には、通常より多くの酸素が取り込まれる。このため、
成膜された銅皮膜は、比較的電気抵抗が大きくなるとと
もに、硬度が高くなり、疵のつきにくい銅皮膜となる。Thereafter, the operation of the suction pump 24 is stopped,
The flow control valve 29 is opened to supply ozone from the ozone supply source 28 to the plating bath 10, and the plating solution 12 in the plating bath 10
Is dissolved in a predetermined amount of ozone. Then, the plating solution 12 is stirred by the stirrer 15, and a DC voltage is applied between the steel plate 16 and the copper electrode 18 by the DC power supply 20. As a result, copper ions, which are components existing as positive ions in the plating solution 12, move toward the steel plate 16 serving as a cathode and are adsorbed on the surface by diffusion and electrophoresis, and electrons are emitted from the steel plate 16. Receives and precipitates as metallic copper. On the other hand, the metallic copper constituting the copper electrode 18 serving as the anode receives positive charges from the DC power supply 20 and becomes copper ions, which are dissolved in the plating solution 12. Then, as time passes, copper is deposited on the surface of the steel plate 16 to form a film. At this time, since ozone is dissolved in the plating solution 12, more copper is taken in than usual in the copper film formed on the surface of the steel plate 16. For this reason,
The formed copper film has a relatively high electric resistance and a high hardness, and is a copper film that is hardly flawed.
【００１８】なお、オゾンを溶解する場合、攪拌機１５
によってメッキ液１２を攪拌しながら行なってもよい。When dissolving ozone, the stirrer 15
May be performed while stirring the plating solution 12.
【００１９】図２は、第２実施形態を説明するためのメ
ッキ装置の図である。図２において、メッキ液槽３０に
は、硫酸銅メッキ液などのメッキ液３１が貯溜してあ
る。このメッキ液３１は、通常の無電解メッキ用のメッ
キ液であって、還元剤としてホルムアルデヒドが添加し
てある。また、メッキ液槽３０の上部には、密閉蓋１４
が取り付けられるようになっているとともに、排気管２
２を介して吸引ポンプ２４が接続してある。さらに、メ
ッキ液槽３０の底部には、流量制御弁３２を備えたガス
配管３４を介して水素ガス供給源３６が接続してあっ
て、メッキ液３１に水素ガス３８を吹き込むことができ
るようになっている。そして、メッキ液槽３０の下部に
は、多孔板４０が配設してあり、ガス配管３４を介して
導入された水素ガス３８をメッキ液槽３０の全体に分散
することができるようにしてある。FIG. 2 is a diagram of a plating apparatus for explaining a second embodiment. In FIG. 2, a plating solution 31 such as a copper sulfate plating solution is stored in a plating solution tank 30. The plating solution 31 is a usual plating solution for electroless plating, and contains formaldehyde as a reducing agent. In addition, a sealing lid 14 is provided above the plating solution tank 30.
And the exhaust pipe 2
2, a suction pump 24 is connected. Further, a hydrogen gas supply source 36 is connected to the bottom of the plating solution tank 30 via a gas pipe 34 having a flow control valve 32 so that a hydrogen gas 38 can be blown into the plating solution 31. Has become. A perforated plate 40 is provided below the plating bath 30 so that the hydrogen gas 38 introduced through the gas pipe 34 can be dispersed throughout the plating bath 30. .
【００２０】メッキ液槽３０内のメッキ液３１は、流量
制御弁４１を有する液供給配管４２を介して液供給ノズ
ル４４に導くようになっている。また、液供給ノズル４
４の下方には、モータ４６によって矢印４８のように回
転する処理テーブル５０が配置してあり、この処理テー
ブル５０の上面にメッキを施す金属やプラスチック、ガ
ラスなどの基材５２を配置するようになっている。The plating solution 31 in the plating solution tank 30 is guided to a solution supply nozzle 44 via a solution supply pipe 42 having a flow control valve 41. The liquid supply nozzle 4
A processing table 50 which is rotated by a motor 46 as shown by an arrow 48 is disposed below the processing table 4, and a base material 52 such as metal, plastic, or glass to be plated is disposed on the upper surface of the processing table 50. Has become.
【００２１】このように構成したメッキ装置によるメッ
キは、次のように行なう。The plating by the plating apparatus having the above structure is performed as follows.
【００２２】まず、所定の組成のメッキ液３１をメッキ
液槽３０内に入れ、吸引ポンプ２４によってメッキ液３
１の脱ガスを行なう。その後、流量制御弁３２を開いて
水素ガス供給源３６からガス配管３４を介してメッキ液
槽３０に水素ガス３８を供給し、メッキ液３１に水素ガ
ス３８を溶解する。そして、メッキ液３１の水素ガス３
８の溶解度が所定の値に達したならば、水素ガスの供給
を停止し、流量制御弁４１を開いてメッキ液３１を供給
ノズル４４に導き、処理テーブル５０とともに回転して
いる基材５２の上面にメッキ液３１を滴下、供給する。
液供給ノズル４４から滴下されたメッキ液３１は、基材
５２の表面と接触すると、自己触媒作用によって溶液の
成分である銅イオンが還元されて基材５２の上面に析出
して銅皮膜５４を形成する。First, a plating solution 31 having a predetermined composition is put into a plating solution tank 30, and the plating solution 3 is
Degas 1 is performed. After that, the flow control valve 32 is opened to supply the hydrogen gas 38 from the hydrogen gas supply source 36 to the plating solution tank 30 via the gas pipe 34, and the hydrogen gas 38 is dissolved in the plating solution 31. And the hydrogen gas 3 of the plating solution 31
When the solubility of No. 8 reaches a predetermined value, the supply of hydrogen gas is stopped, the flow control valve 41 is opened, the plating solution 31 is guided to the supply nozzle 44, and the base material 52 rotating with the processing table 50 is removed. The plating solution 31 is dropped and supplied to the upper surface.
When the plating solution 31 dropped from the solution supply nozzle 44 comes into contact with the surface of the substrate 52, copper ions, which are components of the solution, are reduced by autocatalysis and precipitate on the upper surface of the substrate 52 to form the copper film 54. Form.
【００２３】このように、第２の実施形態においては、
脱ガスしたメッキ液３１に水素ガス３８を溶解したこと
により、基材５２の上面に成膜された銅皮膜５４に水素
ガスが取り込まれて還元度が大きくなるとともに、結晶
内の格子欠陥である原子空孔などに水素がトラップされ
るため、銅皮膜５４の導電率が高まる。また、基材５２
を回転させながら銅皮膜５４を成膜しているため、膜の
厚さを容易に均一にすることができる。なお、成膜の際
に空気中の酸素の影響を避けるために、処理テーブル５
２の周囲を窒素雰囲気などにしてもよい。As described above, in the second embodiment,
By dissolving the hydrogen gas 38 in the degassed plating solution 31, the hydrogen gas is taken into the copper film 54 formed on the upper surface of the base material 52 to increase the degree of reduction, and it is a lattice defect in the crystal. Since hydrogen is trapped in atomic vacancies or the like, the conductivity of the copper film 54 increases. The base material 52
Since the copper film 54 is formed while rotating the film, the thickness of the film can be easily made uniform. In order to avoid the influence of oxygen in the air during the film formation, the processing table 5
The periphery of 2 may be a nitrogen atmosphere or the like.
【００２４】なお、前記実施形態においては、メッキ液
３１に水素ガスを溶解した場合について説明したが、窒
素ガスなどの他のガスを溶解してもよい。また、酸化膜
などの酸化度の大きな膜を形成する場合には、酸素やオ
ゾンを溶解する。このように、溶解させるガス種を変え
ることにより、豊富な成膜用液種を形成することができ
る。また、前記実施の形態においては、成膜がメッキで
ある場合について説明したが、電気泳動皮膜や電鋳など
にも適用することができる。In the above embodiment, the case where hydrogen gas is dissolved in the plating solution 31 has been described, but another gas such as nitrogen gas may be dissolved. When a film having a high degree of oxidation such as an oxide film is formed, oxygen and ozone are dissolved. As described above, by changing the type of gas to be dissolved, an abundant liquid type for film formation can be formed. In the above embodiment, the case where the film is formed by plating is described. However, the present invention can be applied to an electrophoretic film, electroforming, or the like.
【００２５】[0025]
【発明の効果】以上に説明したように、本発明によれ
ば、溶液を一度脱ガスして溶存している酸素や窒素を除
去したのち、所望のガスを溶解して成膜することによ
り、溶解させたガスが成膜した膜中に取り込まれるた
め、従来では得ることができない性質、特性を有する膜
を成膜することができる。したがって、成膜するための
液種を豊富にすることができる。As described above, according to the present invention, a solution is degassed once to remove dissolved oxygen and nitrogen, and then a desired gas is dissolved to form a film. Since the dissolved gas is taken into the formed film, a film having properties and characteristics that cannot be obtained conventionally can be formed. Therefore, it is possible to enrich the liquid type for forming a film.
【００２６】また、膜を形成する基材を回転させて成膜
すると、成膜した膜の全体にわたって容易に厚さや特性
を一様にすることができ、品質の優れた膜を得ることが
できる。When the substrate on which the film is formed is rotated, the thickness and characteristics can be easily made uniform throughout the formed film, and a film of excellent quality can be obtained. .
【図１】本発明の第１実施形態の説明図である。FIG. 1 is an explanatory diagram of a first embodiment of the present invention.
【図２】本発明の第２実施形態の説明図である。FIG. 2 is an explanatory diagram of a second embodiment of the present invention.
１０ メッキ浴 １２、３１ 溶液(メッキ液) １６ 基材(鋼板) １８ 銅電極 ２４ 吸引ポンプ ２８ オゾン供給源 ３０ メッキ液槽 ３６ 水素ガス供給源 ３８ 水素ガス ４４ 液供給ノズル ４６ モータ ５２ 基材 ５４ 銅皮膜 Reference Signs List 10 plating bath 12, 31 solution (plating solution) 16 substrate (steel plate) 18 copper electrode 24 suction pump 28 ozone supply source 30 plating solution tank 36 hydrogen gas supply source 38 hydrogen gas 44 liquid supply nozzle 46 motor 52 substrate 54 copper Film
Claims (3)
出させて成膜する成膜方法において、前記溶液を脱ガス
したのち、前記成膜する膜の種類または成膜する膜の特
性に応じて予め定めたガス種を前記溶液に溶解させつ
つ、または溶解させたのちに前記成分を析出させること
を特徴とする成膜方法。1. A film forming method for forming a film by precipitating a component present in a solution on a surface of a substrate, wherein after degassing the solution, the type of the film to be formed or the characteristics of the film to be formed. A film forming method comprising: dissolving or preliminarily dissolving a gas species in the solution according to the above-mentioned method, and then depositing the component.
は酸素であることを特徴とする請求項１に記載の成膜方
法。2. The method according to claim 1, wherein the gas dissolved in the solution is hydrogen or oxygen.
るとともに、基材の上面に前記溶液を供給しつつ行なう
ことを特徴とする請求項１または２に記載の成膜方法。3. The method according to claim 1, wherein the deposition of the components is performed while rotating the substrate and supplying the solution to the upper surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15398599A JP3589090B2 (en) | 1999-06-01 | 1999-06-01 | Film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15398599A JP3589090B2 (en) | 1999-06-01 | 1999-06-01 | Film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000345398A true JP2000345398A (en) | 2000-12-12 |
| JP3589090B2 JP3589090B2 (en) | 2004-11-17 |
Family
ID=15574399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15398599A Expired - Fee Related JP3589090B2 (en) | 1999-06-01 | 1999-06-01 | Film formation method |
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| Country | Link |
|---|---|
| JP (1) | JP3589090B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10248556A1 (en) * | 2002-10-18 | 2004-04-29 | Volkswagen Ag | Vehicle bodywork coating system with an immersion bath, for corrosion protection, has a degassing vessel where gas is extracted from over the process medium level by a vacuum pump |
| JP2006161156A (en) * | 2004-11-10 | 2006-06-22 | Dainippon Printing Co Ltd | Method for producing metal oxide film |
| JP2006161157A (en) * | 2004-11-10 | 2006-06-22 | Dainippon Printing Co Ltd | Process for forming metal oxide film |
| JP2008303417A (en) * | 2007-06-06 | 2008-12-18 | Toshiba Corp | Plating film forming apparatus and plating film forming method |
| CN103276414A (en) * | 2013-06-08 | 2013-09-04 | 苏州市金翔钛设备有限公司 | Electroforming apparatus for high open porosity micro orifice plate |
| JP2014139341A (en) * | 2012-12-11 | 2014-07-31 | Novellus Systems Incorporated | Electric loading vacuum plating cell |
| JP2015137374A (en) * | 2014-01-21 | 2015-07-30 | 株式会社荏原製作所 | plating apparatus and plating method |
| US10128102B2 (en) | 2013-02-20 | 2018-11-13 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
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1999
- 1999-06-01 JP JP15398599A patent/JP3589090B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10248556A1 (en) * | 2002-10-18 | 2004-04-29 | Volkswagen Ag | Vehicle bodywork coating system with an immersion bath, for corrosion protection, has a degassing vessel where gas is extracted from over the process medium level by a vacuum pump |
| DE10248556B4 (en) * | 2002-10-18 | 2015-07-09 | Volkswagen Ag | Process for the treatment of a substrate for the purpose of corrosion protection and apparatus for degassing the liquid process medium used in the process |
| JP2006161156A (en) * | 2004-11-10 | 2006-06-22 | Dainippon Printing Co Ltd | Method for producing metal oxide film |
| JP2006161157A (en) * | 2004-11-10 | 2006-06-22 | Dainippon Printing Co Ltd | Process for forming metal oxide film |
| JP4594846B2 (en) * | 2004-11-10 | 2010-12-08 | 大日本印刷株式会社 | Method for producing metal oxide film |
| JP2008303417A (en) * | 2007-06-06 | 2008-12-18 | Toshiba Corp | Plating film forming apparatus and plating film forming method |
| JP4575401B2 (en) * | 2007-06-06 | 2010-11-04 | 株式会社東芝 | Plating film forming apparatus and plating film forming method |
| US10840101B2 (en) | 2009-06-17 | 2020-11-17 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
| JP2014139341A (en) * | 2012-12-11 | 2014-07-31 | Novellus Systems Incorporated | Electric loading vacuum plating cell |
| US10128102B2 (en) | 2013-02-20 | 2018-11-13 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| CN103276414A (en) * | 2013-06-08 | 2013-09-04 | 苏州市金翔钛设备有限公司 | Electroforming apparatus for high open porosity micro orifice plate |
| TWI634234B (en) * | 2014-01-21 | 2018-09-01 | 荏原製作所股份有限公司 | Plating apparatus and plating method |
| JP2015137374A (en) * | 2014-01-21 | 2015-07-30 | 株式会社荏原製作所 | plating apparatus and plating method |
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