JP2000344549A - Method for tempering glass substrate - Google Patents
Method for tempering glass substrateInfo
- Publication number
- JP2000344549A JP2000344549A JP11157209A JP15720999A JP2000344549A JP 2000344549 A JP2000344549 A JP 2000344549A JP 11157209 A JP11157209 A JP 11157209A JP 15720999 A JP15720999 A JP 15720999A JP 2000344549 A JP2000344549 A JP 2000344549A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- temp
- substrate
- temperature
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
- C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はガラス基板を化学強
化処理する方法の改良に関する。The present invention relates to an improvement in a method for chemically strengthening a glass substrate.
【0002】[0002]
【従来の技術】HDD(ハードディスクドライブ)の情
報記録媒体用基板として、従来のアルミ基板に代えて、
平滑性と耐久性に優れたガラス基板が注目されている。
このうち、化学強化ガラス基板では、ガラス基板を38
0℃〜500℃程度の硝酸塩等の溶融塩溶液中に浸し
て、イオン交換法によって基板表面の強度向上を図って
いる。この場合の基板温度の経時変化の一例を図3に示
す。2. Description of the Related Art As a substrate for an information recording medium of an HDD (hard disk drive), instead of a conventional aluminum substrate,
Glass substrates with excellent smoothness and durability have attracted attention.
Among them, the glass substrate is 38
It is immersed in a molten salt solution such as nitrate at about 0 ° C. to 500 ° C. to improve the strength of the substrate surface by an ion exchange method. FIG. 3 shows an example of the change over time of the substrate temperature in this case.
【0003】図3において、ガラス基板は溶融塩溶液に
浸漬するのに先だって、温度の急上昇による破壊を防止
するために予め加熱炉中で溶融塩溶液の温度T1(T1=
基板の歪み点温度以下50℃〜100℃の温度範囲)近
くまで時間(t1=10分〜60分)をかけて徐々に温
度上昇させられ、加熱炉から取り出された後(t2=1
分〜2分)、溶液槽内へ所定時間(t3=15分〜5時
間)浸漬されてイオン交換による基板強化がなされる
(低温イオン交換法)。強化後のガラス基板は溶液槽か
ら取り出されて大気中で放冷される(t4=10分)。
なお、歪み点温度とは、ガラスでは粘度が4×1014ポ
アズのときの温度を言い、この温度では粘性流動が事実
上起こり得ないので、これ以上の温度ではガラス中の歪
みを除去できないとされる温度である。In FIG. 3, prior to immersing a glass substrate in a molten salt solution, the temperature T1 of the molten salt solution (T1 = T1 =
The temperature is gradually raised over a period of time (t1 = 10 to 60 minutes) to near the strain point temperature of the substrate below 50 ° C. to 100 ° C., and after being taken out of the heating furnace (t2 = 1).
Minutes to 2 minutes) and immersed in the solution tank for a predetermined time (t3 = 15 minutes to 5 hours) to strengthen the substrate by ion exchange.
(Low temperature ion exchange method). The tempered glass substrate is taken out of the solution tank and allowed to cool in the air (t4 = 10 minutes).
Note that the strain point temperature is a temperature at which the glass has a viscosity of 4 × 10 14 poises. At this temperature, viscous flow cannot practically occur. Temperature.
【0004】[0004]
【発明が解決しようとする課題】しかし、上記従来の処
理方法では、強化処理後のガラス基板に反りを生じるこ
とが問題となっていた。すなわち、図4にはガラス基板
Sの表面の等高線図を示し、図4(A)は強化処理前の
もの、図4(B)は強化処理後のものである。これから
明らかなように、強化処理を行うとその後の冷却時に、
ガラス基板Sの内周部は外周部に比して放熱が悪いため
両部で温度差を生じ、その熱収縮差によってガラス基板
Sに同心円状の反りを生じる。これは、生産効率向上の
ために多数のガラス基板を垂直姿勢で近接して並べた保
持具を使用して上記強化処理を行う場合に甚だしく、例
えば3.5インチ用ガラス基板で、強化処理前の2μm
程度の反りに比して、強化処理後は6〜10μm程度の
反りを生じることがあり、HDDにおける記録再生ヘッ
ドの浮上量を25nm程度で安定的に保証するために
は、ガラス基板の反りを5μm以下に抑える必要があ
る。なお、従来、ガラスにおいては、歪み点温度以下で
の歪みは殆ど無視できると考えられていたが、薄く比較
的大きな面積のガラス基板では化学強化処理の有無にか
かわらず、わずかな面内温度差があっても反りを生じる
のである。However, in the above-mentioned conventional processing method, there is a problem that the glass substrate after the tempering treatment is warped. That is, FIG. 4 shows a contour map of the surface of the glass substrate S, where FIG. 4 (A) is before the strengthening process and FIG. 4 (B) is after the strengthening process. As is clear from this, when the strengthening process is performed, during subsequent cooling,
Since the inner peripheral portion of the glass substrate S has a lower heat radiation than the outer peripheral portion, a temperature difference occurs between the two portions, and a concentric warpage occurs in the glass substrate S due to the difference in thermal contraction. This is remarkable when the above-mentioned tempering treatment is performed using a holder in which a large number of glass substrates are closely arranged in a vertical position in order to improve production efficiency. For example, a 3.5-inch glass substrate is used before the tempering treatment. 2 μm
The warpage of the glass substrate may be about 6 to 10 μm after the strengthening process, and in order to stably guarantee the flying height of the recording / reproducing head in the HDD at about 25 nm, the warpage of the glass substrate must be reduced. It is necessary to suppress it to 5 μm or less. Conventionally, in glass, the strain at or below the strain point temperature was considered to be almost negligible. Even if there is, warpage occurs.
【0005】そこで、本発明はこのような要請に鑑みた
もので、強化処理後のガラス基板の反りを可及的に小さ
くできるガラス基板強化処理方法を提供することを目的
とする。The present invention has been made in view of such a demand, and an object of the present invention is to provide a glass substrate strengthening method capable of minimizing the warpage of a glass substrate after the strengthening process.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明の方法では、ガラス基板を所定温度以上の溶
融塩溶液中に浸漬してイオン交換による基板強化を行な
った後、ガラス基板の歪み点温度よりも低い所定の温度
範囲でガラス基板を再加熱することを特徴としている。
この場合、上記所定の温度範囲は、ガラス基板の歪み点
温度以下150℃〜200℃の温度範囲とすることが望
ましい。In order to achieve the above object, in the method of the present invention, a glass substrate is immersed in a molten salt solution at a predetermined temperature or higher to strengthen the substrate by ion exchange. Is characterized in that the glass substrate is reheated in a predetermined temperature range lower than the strain point temperature.
In this case, the predetermined temperature range is desirably set to a temperature range of 150 ° C. to 200 ° C. or lower than the strain point temperature of the glass substrate.
【0007】本発明の方法において、ガラス基板を上記
温度範囲内で再加熱すると、強化処理後の放冷時に生じ
た反りが解消されるとともに、再加熱後の放冷時に新た
な反りが生じることもなく、この結果、強化処理後のガ
ラス基板の反りを最も小さくすることができる。In the method of the present invention, when the glass substrate is reheated within the above-mentioned temperature range, the warpage caused at the time of cooling after the tempering treatment is eliminated, and a new warpage occurs at the time of cooling after the reheating. Nonetheless, as a result, the warpage of the glass substrate after the tempering treatment can be minimized.
【0008】[0008]
【発明の実施の形態】図1には本発明の処理方法におけ
る基板温度の経時変化を示す。ガラス基板は溶融塩溶液
に浸漬するのに先だって、温度の急上昇による破壊を防
止するために、従来と同様に、予め加熱炉中で溶融塩溶
液の温度T1(T1=基板の歪み点温度以下50℃〜10
0℃の温度範囲)近くまで時間(t1=10分〜60
分)をかけて徐々に温度上昇させられ、加熱炉から取り
出された後(t2=1分〜2分)、溶液槽内へ所定時間
(t3=15分〜5時間)浸漬されて温度T1にてイオン
交換による基板強化がなされる(低温イオン交換法)。FIG. 1 shows a change with time of a substrate temperature in a processing method of the present invention. Prior to immersing the glass substrate in the molten salt solution, the temperature T1 of the molten salt solution (T1 = 50% or less of the strain point temperature of the substrate) is previously set in a heating furnace in order to prevent breakage due to a rapid rise in temperature, as in the prior art. ° C-10
Time (t1 = 10 minutes to 60)
), And after being taken out of the heating furnace (t2 = 1 minute to 2 minutes), immersed in the solution tank for a predetermined time (t3 = 15 minutes to 5 hours) to reach the temperature T1. The substrate is strengthened by ion exchange (low-temperature ion exchange method).
【0009】溶液槽から取り出された後、時間t5(t5
=5分)をかけてほぼ200℃まで大気中で放冷した後
に、ガラス基板は再び加熱炉に入れられて温度T2(T2
=基板の歪み点温度以下150℃〜200℃の温度範
囲)で所定時間(t6=10分)だけ再加熱される。そ
の後、ガラス基板は加熱炉から取り出されて大気中で放
冷される(t4=10分)。After being taken out of the solution tank, time t5 (t5
= 5 minutes) and allowed to cool to about 200 ° C. in the air, and then the glass substrate was put into a heating furnace again and the temperature T2 (T2
= Temperature = 150 ° C. to 200 ° C. below the strain point temperature of the substrate) for a predetermined time (t6 = 10 minutes). Thereafter, the glass substrate is taken out of the heating furnace and allowed to cool in the atmosphere (t4 = 10 minutes).
【0010】このように、強化処理後のガラス基板を加
熱炉で上記温度T2で再加熱することにより、図2に示
すように、ガラス基板の反りは強化処理前の2μm程度
にまで小さくなる。この場合、図2から明らかなよう
に、上記温度T2を基板の歪み点温度以下200℃より
も低くすると、温度T2が低くなるほど強化処理後の放
冷時(t5)に生じる反りが解消されないことにより、
基板の反りは大きくなる。また、上記温度T2を基板の
歪み点温度以下150℃よりも高くすると、再加熱後の
大気放冷時(t4)に新たな反りを生じることにより、
温度T2が高くなるにつれて基板の反りはやはり大きく
なる。結局、温度T2を基板の歪み点温度以下150℃
〜200℃の温度範囲で選ぶことにより、ガラス基板の
反りを最も小さくすることができる。As described above, the glass substrate after the tempering treatment is reheated in the heating furnace at the above temperature T2, so that the warpage of the glass substrate is reduced to about 2 μm before the tempering treatment as shown in FIG. In this case, as is apparent from FIG. 2, when the temperature T2 is lower than 200 ° C. below the strain point temperature of the substrate, the lower the temperature T2, the more the warpage that occurs at the time of cooling (t5) after the strengthening treatment is not eliminated. By
The warpage of the substrate increases. Further, if the temperature T2 is higher than the strain point temperature of the substrate and is higher than 150 ° C., a new warp occurs at the time of cooling to the atmosphere after reheating (t4),
As the temperature T2 increases, the warpage of the substrate also increases. As a result, the temperature T2 is set to 150 ° C. or lower than the strain point temperature of the substrate.
By selecting the temperature in the range of 200 ° C. to 200 ° C., the warpage of the glass substrate can be minimized.
【0011】なお、ガラス基板の反りを最も小さくでき
る温度T2の範囲は50℃程度もあるから(図2参照)、
加熱炉内における、ある程度の温度分布のムラは許さ
れ、加熱炉の温度制御を簡易なものとすることができ
る。また、再加熱時間(t6)は10分程度であるか
ら、全体の処理時間も従来と比してそれほど長くなるこ
とはない。Note that the range of the temperature T2 at which the warpage of the glass substrate can be minimized is about 50 ° C. (see FIG. 2).
A certain degree of unevenness in the temperature distribution in the heating furnace is allowed, and the temperature control of the heating furnace can be simplified. Further, since the reheating time (t6) is about 10 minutes, the entire processing time is not so long as compared with the conventional case.
【0012】[0012]
【発明の効果】以上のように、本発明のガラス基板強化
処理方法によれば、強化処理後のガラス基板の反りを可
及的に小さくすることができるから、HDD(ハードデ
ィスクドライブ)の情報記録媒体用基板として使用した
場合に記録再生ヘッドの浮上量を安定的に保証すること
ができる。As described above, according to the glass substrate strengthening treatment method of the present invention, the warpage of the glass substrate after the strengthening treatment can be reduced as much as possible. When used as a medium substrate, the flying height of the recording / reproducing head can be stably guaranteed.
【図1】本発明の処理方法における、ガラス基板温度の
経時変化を示す図である。FIG. 1 is a diagram showing a change over time of a glass substrate temperature in a processing method of the present invention.
【図2】再加熱温度とガラス基板の反りの関係を示す図
である。FIG. 2 is a diagram showing a relationship between a reheating temperature and a warpage of a glass substrate.
【図3】従来の処理方法における、ガラス基板温度の経
時変化を示す図である。FIG. 3 is a diagram showing a temporal change of a glass substrate temperature in a conventional processing method.
【図4】ガラス基板の反りを示す等高線図である。FIG. 4 is a contour diagram showing warpage of a glass substrate.
Claims (2)
中に浸漬してイオン交換による基板強化を行なった後、
前記ガラス基板の歪み点温度よりも低い所定の温度範囲
で前記ガラス基板を再加熱することを特徴とするガラス
基板強化方法。After immersing a glass substrate in a molten salt solution at a predetermined temperature or higher to strengthen the substrate by ion exchange,
A glass substrate strengthening method, wherein the glass substrate is reheated in a predetermined temperature range lower than a strain point temperature of the glass substrate.
50℃〜200℃の温度範囲である請求項1に記載のガ
ラス基板強化方法。2. The temperature range is equal to or lower than the strain point temperature.
The glass substrate strengthening method according to claim 1, wherein the temperature is in a temperature range of 50C to 200C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11157209A JP2000344549A (en) | 1999-06-04 | 1999-06-04 | Method for tempering glass substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11157209A JP2000344549A (en) | 1999-06-04 | 1999-06-04 | Method for tempering glass substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000344549A true JP2000344549A (en) | 2000-12-12 |
Family
ID=15644606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11157209A Pending JP2000344549A (en) | 1999-06-04 | 1999-06-04 | Method for tempering glass substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000344549A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8413464B2 (en) | 2006-09-29 | 2013-04-09 | Hoya Corporation | Method for producing glass substrate for magnetic disk and method for producing magnetic disk |
-
1999
- 1999-06-04 JP JP11157209A patent/JP2000344549A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8413464B2 (en) | 2006-09-29 | 2013-04-09 | Hoya Corporation | Method for producing glass substrate for magnetic disk and method for producing magnetic disk |
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