JP2000340859A5 - - Google Patents
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- JP2000340859A5 JP2000340859A5 JP1999324037A JP32403799A JP2000340859A5 JP 2000340859 A5 JP2000340859 A5 JP 2000340859A5 JP 1999324037 A JP1999324037 A JP 1999324037A JP 32403799 A JP32403799 A JP 32403799A JP 2000340859 A5 JP2000340859 A5 JP 2000340859A5
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- 238000004544 sputter deposition Methods 0.000 description 16
- 230000005415 magnetization Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 230000001629 suppression Effects 0.000 description 10
- 229910019041 PtMn Inorganic materials 0.000 description 9
- 239000004020 conductor Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052803 cobalt Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 229910034327 TiC Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001105 regulatory Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
Description
【特許請求の範囲】
【請求項１】 非磁性層を介して積層された二つの磁性層の積層膜を主構成要素とする磁気抵抗効果素子であって、
一方の前記磁性層が磁化回転抑制層と磁気的に結合して固定層を構成し、
前記一方の磁性層が２層の界面磁性膜と前記２層の界面磁性膜に挟まれたＭFe 2 Ｏ 4 磁性膜（ＭはFe,Co,Niから選ばれる１種もしくは２種以上の元素）との積層膜より構成され、
一方の前記界面磁性膜が[磁性膜／非磁性膜／磁性膜]から成り、前記非磁性膜を介して前記二つの磁性膜が反強磁性的に結合し、
前記非磁性層を介して積層された二つの磁性層の積層膜の膜面の主に垂直方向に電流を流す、
磁気抵抗効果素子。
【請求項２】 前記一方の磁性層が外部磁界に対して磁化回転し難く、他方の磁性層が磁化回転し易い、請求項１に記載の磁気抵抗効果素子。
【請求項３】 他方の前記界面磁性膜がFe,Co,Niから選ばれる１種もしくは２種以上の元素より成る、請求項１に記載の磁気抵抗効果素子。
【請求項４】 前記磁化回転抑制層がＰ-Mn系（ＰはPt,Ni,Pd,Ir,Rh,Ru,Crから選ばれる１種もしくは２種以上の元素）合金より成る、請求項１に記載の磁気抵抗効果素子。
【請求項５】 請求項１〜４のいずれかに記載の磁気抵抗効果素子に、更にシールド部を具備してなる磁気抵抗効果型ヘッド。
【請求項６】 請求項１〜４のいずれかに記載の磁気抵抗効果素子に、更に検知すべき磁界を磁気抵抗素子部に導入するヨ−クを具備してなる磁気抵抗効果型ヘッド。
【請求項７】 情報を記録するための磁界を発生させる導体線、
情報を記録するために設けられた磁気抵抗効果素子、及び
前記磁気抵抗効果素子の磁気抵抗変化より情報読み出しするための導体線
を主構成要素とするメモリ素子において、
前記磁気抵抗効果素子が請求項１に記載の磁気抵抗効果素子である、メモリ素子。
[Claims]
1. Lamination of two magnetic layers laminated via a non-magnetic layer.MembraneMagnetoresist sensor as the main componentAnd,
One of the magnetic layers is magnetically coupled with the magnetization rotation suppressing layer to form a fixed layer.
MFe in which one of the magnetic layers is sandwiched between the two interfacial magnetic films and the two interfacial magnetic films. 2 O Four It is composed of a laminated film with a magnetic film (M is one or more elements selected from Fe, Co, Ni).
One of the interfacial magnetic films is composed of [magnetic film / non-magnetic film / magnetic film], and the two magnetic films are antiferrophilically bonded via the non-magnetic film.
A current flows mainly in the vertical direction on the film surface of the laminated film of the two magnetic layers laminated via the non-magnetic layer.
Magneto resistance effect element.
2. One of the magnetic layersMagnetizes and rotates with respect to the external magnetic fieldDifficult,The other magnetic layerThe magnetoresistive element according to claim 1, which is easily magnetized and rotated.
3. The other saidThe magnetoresistive sensor according to claim 1, wherein the interfacial magnetic film is composed of one or more elements selected from Fe, Co, and Ni.
4. SaidThe magnetoresistive effect according to claim 1, wherein the magnetization rotation suppressing layer is made of a P-Mn-based (P is one or more elements selected from Pt, Ni, Pd, Ir, Rh, Ru, Cr) alloy. element.
5. A magnetoresistive head that further includes a shield portion in addition to the magnetoresistive element according to any one of claims 1 to 4.
6. A magnetoresistive head comprising the magnetoresistive element according to any one of claims 1 to 4 and a yoke for introducing a magnetic field to be detected into the magnetoresistive element.
7. A conductor wire that generates a magnetic field for recording information.
Provided to record informationMagneto Resistive Sensor,as well as
The magnetoresistive sensorConductor wire for reading information from the change in magnetoresistance of
In a memory element whose main component is
A memory element in which the magnetoresistive element is the magnetoresistive element according to claim 1.
【０００８】
【課題を解決するための手段】
上記の非磁性層に高抵抗の酸化物膜を用いた従来のＴＭＲ膜とは全く異なり、本発明は、非磁性層（２）を介して積層された二つの磁性層の積層膜を主構成要素とする磁気抵抗効果素子であって、一方の前記磁性層が磁化回転抑制層（４）と磁気的に結合して固定層を構成し、前記一方の磁性層が２層の界面磁性膜（５）と前記２層の界面磁性膜に挟まれたＭFe 2 Ｏ 4 磁性膜（３、ＭはFe,Co,Niから選ばれる１種もしくは２種以上の元素）との積層膜より構成され、一方の前記界面磁性膜が[磁性膜（５−１）／非磁性膜（５−２）／磁性膜（５−３）]から成り、前記非磁性膜を介して前記二つの磁性膜（５−１、５−３）が反強磁性的に結合し、前記非磁性層を介して積層された二つの磁性層の積層膜の膜面の主に垂直方向に電流を流す。ＭがFeの場合は比較的低抵抗となり、ＭがNi,Coとなるに従って比較的高抵抗となるので、組成を適当に選ぶことにより素子のインピ−ダンスの調整が可能である。
0008
[Means for solving problems]
Unlike the conventional TMR film in which a high-resistance oxide film is used for the non-magnetic layer, the present invention mainly comprises a laminated film of two magnetic layers laminated via the non-magnetic layer (2). A magnetic resistance effect element as an element , wherein one of the magnetic layers is magnetically coupled with the magnetization rotation suppressing layer (4) to form a fixed layer, and the one magnetic layer is a two-layer interfacial magnetic film ( It is composed of a laminated film of 5) and an MFe 2 O 4 magnetic film (3, M is one or more elements selected from Fe, Co, Ni ) sandwiched between the two layers of interfacial magnetic films. One of the interfacial magnetic films is composed of [magnetic film (5-1) / non-magnetic film (5-2) / magnetic film (5-3)], and the two magnetic films (5) are interposed via the non-magnetic film. -1, 5-3) are antiferrophilically coupled, and a current flows mainly in the direction perpendicular to the film surface of the laminated film of the two magnetic layers laminated via the non-magnetic layer . When M is Fe, the resistance becomes relatively low, and as M becomes Ni, Co, the resistance becomes relatively high. Therefore, the impedance of the device can be adjusted by appropriately selecting the composition.
図１に参考例の磁気抵抗効果素子の構成を示す断面図の一例を示す。図１は、非磁性層２によって磁気的に隔離された二つの酸化物磁性層１,３より成る磁気抵抗効果素子を示す。酸化物磁性層１,３は主としてＭFe2Ｏ4（ＭはFe,Co,Niから選ばれる１種もしくは２種以上の元素）より構成される。 FIG. 1 shows an example of a cross-sectional view showing the configuration of the magnetoresistive sensor of the reference example. FIG. 1 shows a magnetoresistive element composed of two oxide magnetic layers 1 and 3 magnetically separated by a non-magnetic layer 2. The oxide magnetic layers 1 and 3 are mainly composed of MFe 2 O 4 (M is one or more elements selected from Fe, Co, and Ni).
以上述べたような参考例の磁気抵抗効果素子を用いて、磁気抵抗効果型ヘッドを構成することができる。図に示したものはセンサ−等の磁気抵抗効果素子として使用できるし、ヨ−クの形状により読み取るべき信号磁界の領域を規制することにより磁気抵抗効果型ヘッドともなるものである。 The magnetoresistive head can be configured by using the magnetoresistive element of the reference example as described above. The one shown in the figure can be used as a magnetoresistive element such as a sensor, and can also be a magnetoresistive head by regulating the region of the signal magnetic field to be read by the shape of the yoke.
（参考例１）
多元スパッタリング装置を用いて図１に示した構成の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のターケ゛ットには焼結したNi0.5Fe2.5O4、Co0.5Fe2.5O4を用い、又非磁性層用にはCuタ−ゲットを用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を作製した。
試料A Ni0.5Fe2.5O4(30)/Cu(25)/Co0.5Fe2.5O4(20) （()内は膜厚nmを示す）
試料Aの磁化曲線を室温で200kA/mの磁界を印可して磁界振動磁力計で測定したところ、保磁力が異なる２種類の磁性層からなる積層膜特有の２段曲線を示した。この磁気抵抗効果素子の上下に電極を設けて、そのMR特性を室温で最高200kA/mの磁界を印可して測定した。その結果ＭＲ比は30%と極めて高い値を示した。
( Reference example 1)
A magnetoresistive sensor having the configuration shown in FIG. 1 was manufactured using a multi-dimensional sputtering apparatus. Si was used for the substrate, sintered Ni 0.5 Fe 2.5 O 4 and Co 0.5 Fe 2.5 O 4 were used for the target for the magnetic layer, and Cu target was used for the non-magnetic layer. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration was produced by using the sputtering method while flowing Ar gas to 0.8 m Torr.
Sample A Ni 0.5 Fe 2.5 O 4 (30) / Cu (25) / Co 0.5 Fe 2.5 O 4 (20) (The numbers in parentheses indicate the film thickness nm)
When the magnetization curve of Sample A was measured with a magnetic field vibration magnetic field meter by applying a magnetic field of 200 kA / m at room temperature, a two-step curve peculiar to a laminated film composed of two types of magnetic layers having different coercive forces was shown. Electrodes were provided above and below this magnetoresistive sensor, and its MR characteristics were measured by applying a magnetic field of up to 200 kA / m at room temperature. As a result, the MR ratio was extremely high at 30%.
（参考例２）
参考例１と同様に多元スパッタリング装置を用いて図２に示した構成の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のタ−ゲットには焼結したNi0.1Fe2.9O4、Co0.2Fe2.8O4を用い、又非磁性層用にはCuを、磁化回転抑制層にはIrMnタ−ゲットを用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を作製した。
試料B Ni0.1Fe2.9O4(50)/Cu(22)/Co0.2Fe2.8O4(20)/IrMn(15)
この磁気抵抗効果素子の上下に電極を設けて、そのMR特性を室温で最高200kA/mの磁界を印可して測定した。その結果ＭＲ比は28%と極めて高い値を示した。
( Reference example 2)
Similar to Reference Example 1, a magnetoresistive sensor having the configuration shown in FIG. 2 was manufactured using a multi-dimensional sputtering apparatus. Si is used for the substrate, sintered Ni 0.1 Fe 2.9 O 4 and Co 0.2 Fe 2.8 O 4 are used for the target for the magnetic layer, and Cu is used for the non-magnetic layer as the magnetization rotation suppression layer. Used the IrMn target. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration was produced by using the sputtering method while flowing Ar gas to 0.8 m Torr.
Sample B Ni 0.1 Fe 2.9 O 4 (50) / Cu (22) / Co 0.2 Fe 2.8 O 4 (20) / IrMn (15)
Electrodes were provided above and below this magnetoresistive sensor, and its MR characteristics were measured by applying a magnetic field of up to 200 kA / m at room temperature. As a result, the MR ratio was 28%, which was extremely high.
（参考例３）
参考例１と同様に多元スパッタリング装置を用いて図３に示した構成の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のタ−ゲットには焼結したNi0.1Fe2.9O4、Co0.2Fe2.8O4を用い、又非磁性層用にはCuタ−ゲットを、磁化回転抑制層にはIrMnを、界面磁性層にはCo0.9Fe0.1を用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を作製した。
試料C Ni0.1Fe2.9O4(50)/Co0.9Fe0.1(2)/Cu(22)/Co0.9Fe0.1(2)/Co0.2Fe2.8O4(20)/Co0.9Fe0.1(2)/IrMn(15)
この磁気抵抗効果素子の上下に電極を設けて、そのMR特性を室温で最高200kA/mの磁界を印可して測定した。その結果ＭＲ比は32%と極めて高い値を示した。
( Reference example 3)
A magnetoresistive sensor having the configuration shown in FIG. 3 was manufactured using a multi-dimensional sputtering apparatus in the same manner as in Reference Example 1. Si is used for the substrate, sintered Ni 0.1 Fe 2.9 O 4 and Co 0.2 Fe 2.8 O 4 are used for the target for the magnetic layer, and Cu target is used for the non-magnetic layer. IrMn was used for the suppression layer, and Co 0.9 Fe 0.1 was used for the interfacial magnetic layer. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration was produced by using the sputtering method while flowing Ar gas to 0.8 m Torr.
Sample C Ni 0.1 Fe 2.9 O 4 (50) / Co 0.9 Fe 0.1 (2) / Cu (22) / Co 0.9 Fe 0.1 (2) / Co 0.2 Fe 2.8 O 4 (20) / Co 0.9 Fe 0.1 (2) / IrMn (15)
Electrodes were provided above and below this magnetoresistive sensor, and its MR characteristics were measured by applying a magnetic field of up to 200 kA / m at room temperature. As a result, the MR ratio was 32%, which was extremely high.
（参考例４）
参考例１と同様に多元スパッタリング装置を用いて類似の構成の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のタ−ゲットには焼結したFe3O4を用い、又非磁性層用にはCuタ−ゲットを、磁化回転抑制層にはPtMnを、界面磁性層にはCo0.9Fe0.1とNi0.8Fe0.2を用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を成膜し、280℃で磁界中熱処理を行った。
試料C’ Ni0.8Fe0.2(2)/Fe3O4(1)/Co0.9Fe0.1(0.5)/Cu(2.2)/Co0.9Fe0.1(2)/Fe3O4(1)/Co0.9Fe0.1(2)/PtMn(15)
この磁気抵抗効果素子の上下に電極を設けて、そのMR特性を室温で最高200kA/mの磁界を印可して測定した。その結果ＭＲ比は40%と極めて高い値を示した。
( Reference example 4)
Similar to Reference Example 1, a magnetoresistive sensor having a similar configuration was produced using a multi-dimensional sputtering apparatus. Si is used for the substrate, sintered Fe 3 O 4 is used for the target for the magnetic layer, Cu target is used for the non-magnetic layer, PtMn is used for the magnetization rotation suppression layer, and interfacial magnetism. Co 0.9 Fe 0.1 and Ni 0.8 Fe 0.2 were used as layers. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration is formed using the sputtering method while flowing Ar gas to 0.8 m Torr, and in a magnetic field at 280 ° C. Heat treatment was performed.
Sample C'Ni 0.8 Fe 0.2 (2) / Fe 3 O 4 (1) / Co 0.9 Fe 0.1 (0.5) / Cu (2.2) / Co 0.9 Fe 0.1 (2) / Fe 3 O 4 (1) / Co 0.9 Fe0 .1 (2) / PtMn ( 15)
Electrodes were provided above and below this magnetoresistive sensor, and its MR characteristics were measured by applying a magnetic field of up to 200 kA / m at room temperature. As a result, the MR ratio was as high as 40%.
（参考例５）
参考例１と同様に多元スパッタリング装置を用いて図１と図２に示した構成の２種類の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のターケ゛ットには焼結したNi0.2Fe2.8O4、Co0.2Fe2.8O4を用い、又非磁性層用にはCuを、磁化回転抑制層としてはPtMnタ−ゲットを用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を作製した。
試料D Ni0.2Fe2.8O4(50)/Cu(25)/Co0.2Fe2.8O4(20)
試料E Ni0.2Fe2.8O4(50)/Cu(25)/Co0.2Fe2.8O4(20)/PtMn(20)
成膜後試料Eは280℃で磁界中熱処理を施し、PtMnの規則化を行った。
( Reference example 5)
Similar to Reference Example 1, two types of magnetoresistive sensor having the configurations shown in FIGS. 1 and 2 were produced by using a multi-dimensional sputtering apparatus. The substrate using Si, a Ni 0.2 Fe2 .8 O 4, Co 0.2 Fe 2.8 O 4 was sintered using the Take Bu Tsu preparative for the magnetic layer, and the Cu is for non-magnetic layer, a magnetization rotation suppressing layer A PtMn target was used. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration was produced by using the sputtering method while flowing Ar gas to 0.8 m Torr.
Sample D Ni 0.2 Fe 2.8 O 4 (50) / Cu (25) / Co 0.2 Fe 2.8 O 4 (20)
Sample E Ni 0.2 Fe 2.8 O 4 (50) / Cu (25) / Co 0.2 Fe 2.8 O 4 (20) / PtMn (20)
After film formation, sample E was heat-treated in a magnetic field at 280 ° C to normalize PtMn.
（参考例６）
参考例１と同様に多元スパッタリング装置を用いて図３に示した構成の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のタ−ゲットには焼結したNi0.1Fe2.9O4、Co0.1Fe2.9O4を用い、又非磁性層用にはCuタ−ゲットを、磁化回転抑制層にはPtMnを、界面磁性層にはCo0.9Fe0.1を用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を作製した。
試料F Ni0.1Fe2.9O4(50)/Co0.9Fe0.1(2)/Cu(22)/Co0.9Fe0.1(2)/Co0.1Fe2.9O4(20)/Co0.9Fe0.1(2)/PtMn(20)
この磁気抵抗効果素子を用いて図に示すようなシ−ルド型の磁気抵抗効果ヘッドを作製した。基板としてはAl2O3-TiC基板を用い、シールド材にはNi0.8Fe0.2合金を用い、絶縁膜にはAl2O3を用いた。電極にはAuを用いた。自由層Ni0.1Fe2.9O4(50)/Co0.9Fe0.1(2)の磁化容易方向が検知すべき信号磁界方向と垂直になるように、固定層Co0.9Fe0.1(2)/Co0.2Fe2.8O4(20)/Co0.9Fe0.1(2)/IrMn(15)の磁化容易軸の方向が検知すべき信号磁界方向と平行になるように磁性膜に異方性を付与した。この方法は、磁気抵抗効果素子を作成後、まず、磁界中280℃で熱処理して、固定層の容易方向を規定した後、更に、200℃で上記と直交する方向に磁界を印加して熱処理し、自由層の容易軸を規定した。
( Reference example 6)
A magnetoresistive sensor having the configuration shown in FIG. 3 was manufactured using a multi-dimensional sputtering apparatus in the same manner as in Reference Example 1. Si is used for the substrate, sintered Ni 0.1 Fe 2.9 O 4 and Co 0.1 Fe 2.9 O 4 are used for the target for the magnetic layer, and Cu target is used for the non-magnetic layer. PtMn was used for the suppression layer, and Co 0.9 Fe 0.1 was used for the interfacial magnetic layer. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration was produced by using the sputtering method while flowing Ar gas to 0.8 m Torr.
Sample F Ni 0.1 Fe 2.9 O 4 (50) / Co 0.9 Fe 0.1 (2) / Cu (22) / Co 0.9 Fe 0.1 (2) / Co 0.1 Fe 2.9 O 4 (20) / Co 0.9 Fe 0.1 (2) / PtMn (20)
Using this magnetoresistive element, a shield-type magnetoresistive head as shown in the figure was manufactured. An Al 2 O 3- TiC substrate was used as the substrate, a Ni 0.8 Fe 0.2 alloy was used as the shielding material, and Al 2 O 3 was used as the insulating film. Au was used as the electrode. Free layer Ni 0.1 Fe 2.9 O 4 (50) / Co 0.9 Fe 0.1 (2) Fixed layer Co 0.9 Fe 0.1 (2) / Co 0.2 Fe so that the easy magnetization direction is perpendicular to the signal magnetic field direction to be detected. Anisotropy was added to the magnetic film so that the direction of the easy magnetization axis of 2.8 O 4 (20) / Co 0.9 Fe 0.1 (2) / IrMn (15) was parallel to the direction of the signal magnetic field to be detected. In this method, after creating a magnetoresistive sensor, first heat treatment is performed in a magnetic field at 280 ° C. to define the easy direction of the fixed layer, and then a magnetic field is further applied at 200 ° C. in a direction orthogonal to the above to heat treatment. However, the easy axis of the free layer was defined.
（参考例７）
参考例１と同様に多元スパッタリング装置を用いて図１と図２に示した構成の２種類の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のターケ゛ットには焼結したNi0.1Fe2.9O4とCo0.1Fe2.9O4を用い、又非磁性層用にはCuを、磁化回転抑制層としてはIrMnを、界面磁性層用としてNi0.8Fe0.2,Co0.9Fe0.1をタ−ゲットを用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を作製した。
試料G Ni0.1Fe2.9O4(50)/Ni0.8Fe0.2(2)/Cu(25)/Co0.9Fe0.1(1)/Co0.1Fe2.9O4(50)
試料H Ni0.1Fe2.9O4(50)/Ni0.8Fe0.2(2)/Cu(25)/Co0.9Fe0.1(1)/Ni0.1Fe2.9O4(20)/Co0.9Fe0.1(2)/IrMn(15)
これら磁気抵抗効果素子G,Hを用いて、図７に示したようなメモリ−素子を作製した。導体線にはAuを用い、情報読出用導体線と磁気抵抗効果素子部とを接合する電極にはPtを用いた。又情報記録用導体線と磁気抵抗効果素子部及び情報読出用導体線部との絶縁にはAl2O3を用いた。
( Reference example 7)
Similar to Reference Example 1, two types of magnetoresistive sensor having the configurations shown in FIGS. 1 and 2 were produced by using a multi-dimensional sputtering apparatus. Si is used for the substrate, sintered Ni 0.1 Fe 2.9 O 4 and Co 0.1 Fe 2.9 O 4 are used for the target for the magnetic layer, Cu is used for the non-magnetic layer, and IrMn is used for the magnetization rotation suppression layer. A target of Ni 0.8 Fe 0.2 and Co 0.9 Fe 0.1 was used for the interfacial magnetic layer. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration was produced by using the sputtering method while flowing Ar gas to 0.8 m Torr.
Sample G Ni 0.1 Fe 2.9 O 4 (50) / Ni 0.8 Fe 0.2 (2) / Cu (25) / Co 0.9 Fe 0.1 (1) / Co 0.1 Fe 2.9 O 4 (50)
Sample H Ni 0.1 Fe 2.9 O 4 ( 50) / Ni 0.8 Fe 0.2 (2) / Cu (25) / Co 0.9 Fe 0.1 (1) / Ni0 .1 Fe 2.9 O 4 (20) / Co 0.9 Fe 0.1 (2 ) / IrMn (15)
Using these magnetoresistive elements G and H, a memory element as shown in FIG. 7 was manufactured. Au was used for the conductor wire, and Pt was used for the electrode that joins the conductor wire for reading information and the magnetoresistive sensor. Al 2 O 3 was used to insulate the conductor wire for information recording from the magnetoresistive sensor and the conductor wire for reading information.
（実施例１）
参考例１と同様に多元スパッタリング装置を用いて図４の構成の磁気抵抗効果素子を作製した。基板にはSiを用い、磁性層用のタ−ゲットには焼結したFe3O4を用い、又非磁性層用にはCuタ−ゲットを、磁化回転抑制層にはPtMnを、界面磁性層にはRuを介して反強磁性的に交換結合したCo0.9Fe0.1とNi0.8Fe0.2を用いた。真空チャンバー内を1x10-8Torr以下まで排気した後、Arガスを0.8mTorrになるように流しながら、スハ゜ッタリンク゛法を用いて、下記の構成の磁気抵抗効果素子を成膜し、280℃で磁界中熱処理を行った。
試料I Ni0.8Fe0.2(2)/Ru(0.7)/Ni0.8Fe0.2(1)/Fe2O3(0.6)/Co0.9Fe0.1(1)/Cu(2.2)/Co0.9Fe0.1(2)/Fe 3 O 4 (0.6)/Co0.9Fe0.1(2)/Ru(0.7)/Co0.9Fe0.1(2)/PtMn(15)
この磁気抵抗効果素子の上下に電極を設けて、そのMR特性を室温で最高200kA/mの磁界を印可して測定した。その結果ＭＲ比は36%と極めて高い値を示した。
(Example 1 )
Similar to Reference Example 1, a magnetoresistive sensor having the configuration shown in FIG. 4 was manufactured using a multi-dimensional sputtering apparatus. Si is used for the substrate, sintered Fe 3 O 4 is used for the target for the magnetic layer, Cu target is used for the non-magnetic layer, PtMn is used for the magnetization rotation suppression layer, and interfacial magnetism. For the layer, Co 0.9 Fe 0.1 and Ni 0.8 Fe 0.2, which were antiferromagnetically exchange-bonded via Ru, were used. After exhausting the inside of the vacuum chamber to 1 x 10 -8 Torr or less, a magnetoresistive sensor having the following configuration is formed using the sputtering method while flowing Ar gas to 0.8 m Torr, and in a magnetic field at 280 ° C. Heat treatment was performed.
Sample I Ni 0.8 Fe 0.2 (2) / Ru (0.7) / Ni 0.8 Fe 0.2 (1) / Fe 2 O 3 (0.6) / Co 0.9 Fe 0.1 (1) / Cu (2.2) / Co 0.9 Fe 0.1 (2) ) / Fe 3 O 4 (0.6) / Co 0.9 Fe 0.1 (2) / Ru (0.7) / Co 0.9 Fe 0.1 (2) / PtMn (15)
Electrodes were provided above and below this magnetoresistive sensor, and its MR characteristics were measured by applying a magnetic field of up to 200 kA / m at room temperature. As a result, the MR ratio was 36%, which was extremely high.
作製したこの素子を用いて実施例５と同様な方法で磁気ヘッドを作製し、センス電流として約1kA/mの交流信号磁界を印加してこの膜を用いたヘッドと実施例５のヘッドの出力を比較した。その結果このヘッドの出力は、参考例５のヘッドよりも更に感度が高くなることがわかった。 A magnetic head is manufactured by the same method as in Example 5 using the manufactured element, and an AC signal magnetic field of about 1 kA / m is applied as a sense current to output the head using this film and the head of Example 5. Was compared. As a result, it was found that the output of this head was more sensitive than the head of Reference Example 5.
又この膜を用いて参考例６と同様な方法でメモリ−素子を作製した。このメモリ−素子と参考例６のメモリ−素子の反転磁界を測定したところ、同じ形状の素子であれば、このメモリ−素子の反転磁界は参考例６のそれより小さくなることがわかった。
Further, using this film, a memory element was manufactured by the same method as in Reference Example 6. When the reversing magnetic fields of this memory element and the memory element of Reference Example 6 were measured, it was found that the reversing magnetic field of this memory element was smaller than that of Reference Example 6 if the elements had the same shape.
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| WO2002099906A1 (en) * | 2001-06-04 | 2002-12-12 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance element and magnetoresistance storage element and magnetic memory |
| JP2003031867A (en) | 2001-07-17 | 2003-01-31 | Hitachi Ltd | Magnetoresistive effect element constituted by laminating oxide magnetic layer and metallic magnetic layer upon another |
| FR2830971B1 (en) | 2001-10-12 | 2004-03-12 | Commissariat Energie Atomique | MAGNETORESISTIVE DEVICE WITH IMPROVED PERFORMANCE SPIN VALVE |
| US7477490B2 (en) * | 2004-06-30 | 2009-01-13 | Seagate Technology Llc | Single sensor element that is naturally differentiated |
| JP6553857B2 (en) * | 2014-09-18 | 2019-07-31 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Magnetic tunnel junction device and magnetic random access memory |
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| EP0672303B1 (en) * | 1993-10-06 | 1997-12-03 | Koninklijke Philips Electronics N.V. | Magneto-resistance device, and magnetic head employing such a device |
| JPH1041561A (en) * | 1996-07-25 | 1998-02-13 | Sanyo Electric Co Ltd | Magnetoresistance effect element |
| JP2924825B2 (en) * | 1996-10-31 | 1999-07-26 | 日本電気株式会社 | Magnetoresistive element and magnetoresistive sensor using the same |
| JP3601690B2 (en) * | 1999-03-02 | 2004-12-15 | 松下電器産業株式会社 | Magnetoresistive element and manufacturing method thereof, magnetoresistive head, magnetic recording device, magnetoresistive memory element |
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