JP2000340843A - Light emitting diode element - Google Patents
Light emitting diode elementInfo
- Publication number
- JP2000340843A JP2000340843A JP15047499A JP15047499A JP2000340843A JP 2000340843 A JP2000340843 A JP 2000340843A JP 15047499 A JP15047499 A JP 15047499A JP 15047499 A JP15047499 A JP 15047499A JP 2000340843 A JP2000340843 A JP 2000340843A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- light
- phosphor
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオードチ
ップと、その発光を吸収して波長変換した光を放出する
蛍光体などの色変換材料を備える発光ダイオード素子に
関する。[0001] 1. Field of the Invention [0002] The present invention relates to a light emitting diode chip including a light emitting diode chip and a color conversion material such as a phosphor that absorbs the emitted light and emits light whose wavelength is converted.
【０００２】[0002]
【従来の技術】発光ダイオードと、発光ダイオードから
の発光を吸収して波長変換された光を放出する蛍光体な
どの色変換材料を組み合わせた素子は、特開平７−９９
３４５号公報等に示されているが、蛍光体が発光ダイオ
ードモールド用樹脂の全体に分散するように混入されて
いるので、次のような問題がある。まず第一に、発光ダ
イオードの発光点からその光によって励起される蛍光体
までの距離に大きなバラツキが有る。そのため、発光ダ
イオードの光と蛍光体の光の混色として観察される光の
色相が一定せず（励起点までの距離が長くなると変換光
が長波長側にシフトする）、発光色にムラが生じ易い。
第2に、発光点と励起点の間隔が比較的長い状態が存在
し、この場合は弱い光で蛍光体が励起されるので、光変
換効率が小さくなり、発光素子全体の光度減少につなが
る。2. Description of the Related Art An element combining a light emitting diode and a color conversion material such as a phosphor that absorbs light emitted from the light emitting diode and emits light whose wavelength has been converted is disclosed in Japanese Patent Application Laid-Open No. 7-99.
Although disclosed in Japanese Patent Publication No. 345/345, etc., the following problem arises because the phosphor is mixed so as to be dispersed throughout the light emitting diode molding resin. First, there is a large variation in the distance from the light emitting point of the light emitting diode to the phosphor excited by the light. As a result, the hue of light observed as a mixture of light of the light emitting diode and light of the phosphor is not constant (the converted light shifts to the longer wavelength side as the distance to the excitation point increases), resulting in uneven emission colors. easy.
Secondly, there is a state where the distance between the light emitting point and the excitation point is relatively long. In this case, the phosphor is excited by weak light, so that the light conversion efficiency is reduced and the luminous intensity of the entire light emitting element is reduced.
【０００３】上記の点を回避できる構造として、特開平
１１−４０８５８号公報に開示の構成が知られている。
この公報に開示の構成は、発光ダイオード並びにそれを
配置する台座の上面に蛍光体を一定の厚さで形成するも
ので、このような構成とすることにより、発光点から励
起点までの距離が短くほぼ一定となり、上記の問題を解
消することができる。但し、発光ダイオード台座部のチ
ップから離れた部分の蛍光体には上記と同様の問題が残
るが、素子全体の発光特性に寄与する割合は少ないの
で、この点による影響は少ない。As a structure capable of avoiding the above-described points, a structure disclosed in Japanese Patent Application Laid-Open No. 11-40858 is known.
According to the configuration disclosed in this publication, a phosphor is formed with a certain thickness on the upper surface of a light emitting diode and a pedestal on which the light emitting diode is arranged. With such a configuration, the distance from the light emitting point to the excitation point is reduced. It is short and almost constant, and the above problem can be solved. However, the same problem as described above remains in the phosphor at a portion of the light emitting diode pedestal portion away from the chip, but the influence of this point is small because the ratio of the phosphor to the entire device is small.
【０００４】[0004]
【発明が解決しようとする課題】一般に発光ダイオード
は、基板の上面と平行に発光層が形成されるので、横方
向に放出される光の割合が多い。しかしながら、従来構
造では発光層の横方向に蛍光体が存在しない場合が有
り、この部分においては発光ダイオードの光が波長変換
されない状態が起こりうる。その結果、発光領域内の色
相の均一性が悪くなり、色むらの原因に成る。そこで本
発明は、上記の点を解決することを課題とする。すなわ
ち、色相が均一な発光ダイオード素子を提供することを
課題の1つとする。また、蛍光体による変換効率を高め
ることを課題の１つとする。Generally, in a light emitting diode, a light emitting layer is formed in parallel with the upper surface of a substrate, so that a large proportion of light is emitted in the lateral direction. However, in the conventional structure, there is a case where the phosphor does not exist in the lateral direction of the light emitting layer, and in this portion, the state where the wavelength of the light of the light emitting diode is not converted may occur. As a result, the uniformity of the hue in the light emitting region is deteriorated, which causes color unevenness. Then, this invention makes it a subject to solve said point. That is, an object is to provide a light-emitting diode element having a uniform hue. Another object is to increase the conversion efficiency of the phosphor.
【０００５】[0005]
【課題を解決するための手段】本発明は、請求項１に記
載のように、基板上面に発光層を含んだ半導体層が形成
された発光ダイオードチップと、このチップの上面を覆
う色変換材料とを備える発光ダイオード素子において、
前記チップの上面外周部に前記発光層を貫通する溝を形
成し、この溝に前記色変換材料を配置したことを特徴と
する。According to the present invention, there is provided a light emitting diode chip in which a semiconductor layer including a light emitting layer is formed on an upper surface of a substrate, and a color conversion material covering the upper surface of the chip. In a light emitting diode element comprising:
A groove penetrating the light emitting layer is formed in an outer peripheral portion of an upper surface of the chip, and the color conversion material is disposed in the groove.
【０００６】また、本発明は、請求項２に記載のよう
に、台座に配置し配線が施されて装着された発光ダイオ
ードチップと、前記発光ダイオードチップの装着後にそ
の上面を覆うように形成された色変換材料とを備える発
光ダイオード素子において、前記発光ダイオードチップ
の上面にその半導体層の外周縁よりも内側に位置して環
状の溝を形成し、この溝に前記色変換材料を配置してい
ることを特徴とする。According to a second aspect of the present invention, there is provided a light emitting diode chip which is mounted on a pedestal with wiring provided thereon, and is formed so as to cover an upper surface thereof after the light emitting diode chip is mounted. In the light emitting diode element comprising a color conversion material, an annular groove is formed on the upper surface of the light emitting diode chip inside the outer peripheral edge of the semiconductor layer, and the color conversion material is disposed in this groove. It is characterized by being.
【０００７】[0007]
【発明の実施の形態】以下本発明の発光ダイオード素子
の一実施例を、青色発光ダイオードチップとＹＡＧ系蛍
光体を組み合わせて白色発光を行う場合を例にとり図面
を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the light-emitting diode device of the present invention will be described below with reference to the drawings, taking as an example a case where white light is emitted by combining a blue light-emitting diode chip and a YAG-based phosphor.
【０００８】発光ダイオードチップ１は、図２に断面
図、図３に平面図を示すように、基板２の上面に発光層
３を含む半導体層４を形成し、この半導体層４の上面外
周部には、環状の溝５を形成している。基板2は、例え
ばサファイヤ基板とし、半導体層４は、窒化ガリウム
（ＧａＮ）系材料で形成し、その発光層３は、発光ピー
ク波長が４６０ｎｍ前後になるように設定された窒化イ
ンジウムガリウム（ＩｎＧａＮ）／窒化ガリウム（Ｇａ
Ｎ）の多重量子井戸構造としている。これらの半導体層
は、有機金属化学気相成長（ＭＯＣＶＤ）法を用いて形
成される。半導体層４のＰ，Ｎの層には、Ｐ型電極６と
Ｎ型電極７が接続されている。Ｐ電極６はパラジウム
（Ｐｄ）系材料、Ｎ電極７はアルミニウム（Ａｌ）系材
料で形成され、それらはチップ１の上面に配置されてい
る。As shown in a sectional view of FIG. 2 and a plan view of FIG. 3, a light emitting diode chip 1 has a semiconductor layer 4 including a light emitting layer 3 formed on an upper surface of a substrate 2. Has an annular groove 5 formed therein. The substrate 2 is, for example, a sapphire substrate, the semiconductor layer 4 is formed of a gallium nitride (GaN) -based material, and the light emitting layer 3 is formed of indium gallium nitride (InGaN) whose emission peak wavelength is set to about 460 nm. / Gallium nitride (Ga
N). These semiconductor layers are formed using a metal organic chemical vapor deposition (MOCVD) method. A P-type electrode 6 and an N-type electrode 7 are connected to the P and N layers of the semiconductor layer 4. The P electrode 6 is formed of a palladium (Pd) -based material, and the N electrode 7 is formed of an aluminum (Al) -based material.
【０００９】前記環状の溝５やその外側に位置する段差
８は、半導体層４の選択エッチングによって形成され
る。選択エッチングは、反応ガスとして塩素ガスを用い
た反応性イオンエッチング（ＲＩＥ）によって行うこと
ができる。溝５は、その周囲に半導体層４が位置するよ
うに、半導体層４の外周縁よりも内側に形成し、段差８
の幅よりも若干広く形成されている。溝５は、半導体層
４、この例で発光層３の下側に位置するｎ層を貫通して
基板２に至る深さとしている。The annular groove 5 and the step 8 located outside the annular groove 5 are formed by selective etching of the semiconductor layer 4. The selective etching can be performed by reactive ion etching (RIE) using chlorine gas as a reaction gas. The groove 5 is formed inside the outer peripheral edge of the semiconductor layer 4 so that the semiconductor layer 4 is located therearound.
Is formed slightly wider than the width of. The groove 5 has a depth reaching the substrate 2 through the semiconductor layer 4, in this example, an n-layer located below the light-emitting layer 3.
【００１０】このような構成の発光ダイオードチップ1
は図１に示すように、台座９にチップボンドされた後
に、電極６，７に金ワイヤー１０等を用いた配線が施さ
れることにより、台座９に装着される。チップ１は、チ
ップの高さ寸法よりも深くなるように台座９に形成され
たくぼみ１１の底部に配置されている。電極６，７は、
台座９と別体のあるいは一体の電極（図示せず）にワイ
ヤボンド接続される。The light emitting diode chip 1 having such a configuration
As shown in FIG. 1, after being chip-bonded to the pedestal 9, the electrodes 6 and 7 are mounted on the pedestal 9 by wiring using gold wires 10 or the like. The chip 1 is arranged at the bottom of a recess 11 formed in the pedestal 9 so as to be deeper than the height dimension of the chip. The electrodes 6, 7 are
A wire bond connection is made to an electrode (not shown) separate from or integrated with the pedestal 9.
【００１１】上記のように発光ダイオードチップ1を台
座９に装着した後で、図1に示すように、発光ダイオー
ドチップ１の上面を覆うように蛍光体被膜１２の形成が
行われる。蛍光体被膜１２は、色変換材料として機能す
るものであり、発光ダイオードチップ１から発光された
光によって励起されて発光する粒子状の蛍光体を発光ダ
イオードチップ１に結着することにより形成される。蛍
光体としては、イットリウム・アルミニウム・ガーネッ
ト系（ＹＡＧ系）の蛍光体を用いることができ、白色の
光を得る場合には、発光ダイオードチップ１の発光色と
補色関係の発光色が得られる蛍光体が用いられる。蛍光
体被膜１２は、粒子状蛍光体を気相や液層中に分散させ
て均一に放出させ、粒子状蛍光体の自重による沈降によ
ってチップ１表面に一定の厚さで形成することができ
る。この例では、低粘度の樹脂中に粒子状蛍光体を分散
させてそれを沈降させ、余分な樹脂を除去後に樹脂を硬
化させることにより、蛍光体被膜１２を形成している。
蛍光体被膜１２は、チップ１の溝５の中にも形成され
る。蛍光体被膜１２を上記のようにチップ１を台座９に
装着後に形成する場合は、台座９の一部にも蛍光体被膜
１２が形成される。このようにして、発光ダイオードチ
ップ１の表面に蛍光体被膜１２を備える発光ダイオード
素子１３を形成することができる。After the light emitting diode chip 1 is mounted on the pedestal 9 as described above, a phosphor coating 12 is formed so as to cover the upper surface of the light emitting diode chip 1 as shown in FIG. The phosphor coating 12 functions as a color conversion material, and is formed by binding a particulate phosphor that emits light by being excited by light emitted from the light emitting diode chip 1 to the light emitting diode chip 1. . As the phosphor, an yttrium-aluminum-garnet-based (YAG-based) phosphor can be used. When white light is to be obtained, a fluorescent light having a color complementary to that of the light emitting diode chip 1 is obtained. The body is used. The phosphor coating 12 can be formed in a uniform thickness on the surface of the chip 1 by dispersing the particulate phosphor in a gas phase or a liquid layer to uniformly discharge the phosphor, and sedimentation of the particulate phosphor by its own weight. In this example, the phosphor film 12 is formed by dispersing the particulate phosphor in a low-viscosity resin, causing the particulate phosphor to settle, removing excess resin, and curing the resin.
The phosphor coating 12 is also formed in the groove 5 of the chip 1. When the phosphor film 12 is formed after the chip 1 is mounted on the pedestal 9 as described above, the phosphor film 12 is also formed on a part of the pedestal 9. Thus, the light emitting diode element 13 including the phosphor coating 12 on the surface of the light emitting diode chip 1 can be formed.
【００１２】そして、この発光ダイオード素子１３に通
電して発光ダイオードチップ１を発光させると、チップ
１の上面側並びに側面側から良好な白色光が観察され
た。ここで、環状の溝５に蛍光体を配置しているので、
発光ダイオードチップ１から出力される光の内でその割
合が比較的高い側面発光、特に、半導体層４を介して側
方に発光する光の通路に、蛍光体を配置したので、蛍光
体による色変換をより確実に行うことができるようにな
った。その結果、発光ダイオードチップ１からの光とそ
の光によって励起された蛍光体からの光を発光ダイオー
ドチップ１の近くで確実に混色して色相の均一性を高め
ることができた。When the light-emitting diode element 13 was energized to emit light from the light-emitting diode chip 1, good white light was observed from the top and side surfaces of the chip 1. Here, since the phosphor is arranged in the annular groove 5,
Since the phosphor is arranged in the side emission of the light emitted from the light emitting diode chip 1 in a relatively high proportion, particularly in the side of the light emitted laterally via the semiconductor layer 4, the color of the phosphor is reduced. Conversion can now be performed more reliably. As a result, the light from the light emitting diode chip 1 and the light from the phosphor excited by the light were surely mixed near the light emitting diode chip 1 to improve the hue uniformity.
【００１３】尚、上記実施例は、白色発光の素子１３を
例に取ったが、本発明は、発光ダイオードチップ１の種
類や蛍光体の種類を変えることで、また、蛍光体以外の
色変換材料を用いることで、他の発光色の発光ダイオー
ド素子を作成した場合においても同様の効果（色相の均
一性の向上）が得られる。In the above embodiment, the white light emitting element 13 is taken as an example. However, the present invention is not limited to the case in which the type of the light emitting diode chip 1 and the type of the phosphor are changed, and the color conversion other than the phosphor is performed. By using a material, a similar effect (improvement of hue uniformity) can be obtained even when a light emitting diode element of another emission color is produced.
【００１４】また、上記実施例は粒子状蛍光体を沈降さ
せて蛍光体被膜１２を形成する場合を例にとったが、本
発明は蒸着、スパッタ、インクジェット印刷法などによ
り蛍光体被膜を形成した場合においても、上記と同様の
効果（色相の均一性の向上）が得られる。In the above embodiment, the case where the phosphor layer 12 is formed by sedimenting the particulate phosphor is taken as an example. In the present invention, the phosphor layer is formed by vapor deposition, sputtering, ink jet printing or the like. In this case, the same effect (improvement of hue uniformity) as described above can be obtained.
【００１５】また、上記実施例は発光層の下側に位置す
る半導体層を貫通するように溝5を形成した例を示した
が、本発明はこれに限られるものではなく、例えば、先
の溝に変えて、発光ダイオードチップ１が図4に示すよ
うな溝５を備える場合にも本発明を適用することができ
る。すなわち、発光ダイオードチップ１として、発光層
３の上側に位置する半導体層４を貫通するように溝５を
形成した構成のものを用いる場合にも、本発明を適用す
ることができる。この場合の溝5は、基板２に至る深さ
とすることもできるが、少なくとも発光層３を貫通する
深さを備えていれば良い。このように溝５を形成し、そ
の中に蛍光体被膜１２を配置することにより、発光層３
からその側方に放射される光を確実に蛍光体被膜１２に
照射して発光点の近傍で蛍光体による励起光を発生させ
ることができる。Although the above embodiment shows an example in which the groove 5 is formed so as to penetrate the semiconductor layer located below the light emitting layer, the present invention is not limited to this. The present invention can be applied to a case where the light emitting diode chip 1 has a groove 5 as shown in FIG. 4 instead of the groove. That is, the present invention can be applied to a case where the light emitting diode chip 1 has a configuration in which the groove 5 is formed so as to penetrate the semiconductor layer 4 located above the light emitting layer 3. In this case, the groove 5 may have a depth reaching the substrate 2, but it is sufficient that the groove 5 has at least a depth penetrating the light emitting layer 3. By forming the groove 5 and arranging the phosphor film 12 therein, the light emitting layer 3 is formed.
Thus, light radiated to the side of the phosphor film 12 can be reliably irradiated to the phosphor coating 12 to generate excitation light by the phosphor near the light emitting point.
【００１６】[0016]
【発明の効果】以上説明したように本発明の発光ダイオ
ード素子によれば、発光ダイオードチップの光放出点と
色変換材料の励起点の間隔を短く設定でき、両者の混色
を良好に行って色相の均一性の向上を図ることができる
とともに、色変換材料の変換効率を高く保つことができ
る。さらに、半導体層の外周縁よりも内側に環状の溝を
形成してその中に色変換材料を配置しているので、出力
光に占める割合が高い側面光の利用効率を高めることが
できる。As described above, according to the light emitting diode element of the present invention, the interval between the light emitting point of the light emitting diode chip and the excitation point of the color conversion material can be set short, and the color mixing of both can be performed well, and the hue can be improved. And the conversion efficiency of the color conversion material can be kept high. Furthermore, since the annular groove is formed inside the outer peripheral edge of the semiconductor layer and the color conversion material is arranged therein, the utilization efficiency of the side light, which accounts for a high proportion of the output light, can be increased.
【図１】本発明の一実施例の要部断面図である。FIG. 1 is a sectional view of a main part of an embodiment of the present invention.
【図２】同実施例の発光ダイオードチップの断面図であ
る。FIG. 2 is a sectional view of the light emitting diode chip of the embodiment.
【図３】同実施例の発光ダイオードチップの平面図であ
る。FIG. 3 is a plan view of the light emitting diode chip of the embodiment.
【図４】発光ダイオードチップの他の構成例を示す断面
図である。FIG. 4 is a cross-sectional view illustrating another configuration example of the light emitting diode chip.
１ 発光ダイオードチップ ３ 発光層 ４ 半導体層 ５ 溝 ９ 台座 １２ 蛍光体被膜 １３ 発光ダイオード素子 DESCRIPTION OF SYMBOLS 1 Light emitting diode chip 3 Light emitting layer 4 Semiconductor layer 5 Groove 9 Pedestal 12 Phosphor coating 13 Light emitting diode element
Claims (2)
成された発光ダイオードチップと、このチップの上面を
覆う色変換材料とを備える発光ダイオード素子におい
て、前記チップの上面外周部に前記発光層を貫通する溝
を形成し、この溝に前記色変換材料を配置したことを特
徴とする発光ダイオード素子。1. A light-emitting diode device comprising: a light-emitting diode chip having a semiconductor layer including a light-emitting layer formed on an upper surface of a substrate; and a color conversion material covering an upper surface of the chip. A light emitting diode element, wherein a groove penetrating a layer is formed, and the color conversion material is disposed in the groove.
発光ダイオードチップと、前記発光ダイオードチップの
装着後にその上面を覆うように形成された色変換材料と
を備える発光ダイオード素子において、前記発光ダイオ
ードチップの上面にその半導体層の外周縁よりも内側に
位置して環状の溝を形成し、この溝に前記色変換材料を
配置していることを特徴とする発光ダイオード素子。2. A light-emitting diode element comprising: a light-emitting diode chip disposed on a pedestal, mounted with wiring, and a color conversion material formed to cover an upper surface of the light-emitting diode chip after the light-emitting diode chip is mounted. A light-emitting diode element, comprising: an annular groove formed on the upper surface of a light-emitting diode chip inside an outer peripheral edge of a semiconductor layer; and the color conversion material disposed in the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15047499A JP3519986B2 (en) | 1999-05-28 | 1999-05-28 | Light emitting diode element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15047499A JP3519986B2 (en) | 1999-05-28 | 1999-05-28 | Light emitting diode element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000340843A true JP2000340843A (en) | 2000-12-08 |
| JP3519986B2 JP3519986B2 (en) | 2004-04-19 |
Family
ID=15497702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15047499A Expired - Fee Related JP3519986B2 (en) | 1999-05-28 | 1999-05-28 | Light emitting diode element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3519986B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003163381A (en) * | 2001-11-26 | 2003-06-06 | Citizen Electronics Co Ltd | Surface mount light emitting diode and its manufacturing method |
| JP2010092897A (en) * | 2008-10-03 | 2010-04-22 | Stanley Electric Co Ltd | Semiconductor light-emitting apparatus |
| JP2010166031A (en) * | 2009-01-16 | 2010-07-29 | Yiguang Electronic Ind Co Ltd | Led package structure and method for manufacturing the same |
| JP2013041866A (en) * | 2011-08-11 | 2013-02-28 | Rohm Co Ltd | Semiconductor light-emitting device |
| JP2013065641A (en) * | 2011-09-16 | 2013-04-11 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2013239586A (en) * | 2012-05-15 | 2013-11-28 | Stanley Electric Co Ltd | Semiconductor light-emitting device and lighting appliance |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3048368U (en) | 1997-10-27 | 1998-05-06 | 興 陳 | Light emitting diode |
-
1999
- 1999-05-28 JP JP15047499A patent/JP3519986B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003163381A (en) * | 2001-11-26 | 2003-06-06 | Citizen Electronics Co Ltd | Surface mount light emitting diode and its manufacturing method |
| JP2010092897A (en) * | 2008-10-03 | 2010-04-22 | Stanley Electric Co Ltd | Semiconductor light-emitting apparatus |
| JP2010166031A (en) * | 2009-01-16 | 2010-07-29 | Yiguang Electronic Ind Co Ltd | Led package structure and method for manufacturing the same |
| US8193551B2 (en) | 2009-01-16 | 2012-06-05 | Everlight Electronics Co., Ltd. | LED packaging structure and fabricating method thereof |
| JP2013041866A (en) * | 2011-08-11 | 2013-02-28 | Rohm Co Ltd | Semiconductor light-emitting device |
| JP2013065641A (en) * | 2011-09-16 | 2013-04-11 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2013239586A (en) * | 2012-05-15 | 2013-11-28 | Stanley Electric Co Ltd | Semiconductor light-emitting device and lighting appliance |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3519986B2 (en) | 2004-04-19 |
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