JP2000332050A - Wire bonding equipment - Google Patents
Wire bonding equipmentInfo
- Publication number
- JP2000332050A JP2000332050A JP14287099A JP14287099A JP2000332050A JP 2000332050 A JP2000332050 A JP 2000332050A JP 14287099 A JP14287099 A JP 14287099A JP 14287099 A JP14287099 A JP 14287099A JP 2000332050 A JP2000332050 A JP 2000332050A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- substrate
- horn
- bonding
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子の外部
接続用電極と基板の回路電極とをワイヤによって電気的
に接続するワイヤボンディング装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for electrically connecting external connection electrodes of a semiconductor element and circuit electrodes of a substrate by wires.
【０００２】[0002]
【従来の技術】半導体素子を基板の回路電極と電気的に
接続する方法としてワイヤボンディングが広く用いられ
ている。このワイヤボンディングでは、半導体素子の外
部接続用電極に金線などのワイヤの一端部をキャピラリ
ツールによってボンディングし、このボンディングされ
た状態のワイヤをキャピラリツールを移動させることに
より基板の回路電極上のボンディング点まで引き回して
ボンディングするものである。ボンディング対象によっ
てはボンディング時にボンディング対象面を予め加熱す
る必要があるため、基板が載置される基板載置部は電気
ヒータなどの加熱手段を備えている。このため、高温で
のボンディングを必要とする場合は、基板載置部によっ
て加熱された基板からの輻射熱がホーンに伝達され、ホ
ーンの温度が上昇する。2. Description of the Related Art Wire bonding is widely used as a method for electrically connecting a semiconductor element to a circuit electrode on a substrate. In this wire bonding, one end of a wire such as a gold wire is bonded to an external connection electrode of a semiconductor element by a capillary tool, and the wire in the bonded state is moved by a capillary tool to form a bond on a circuit electrode of a substrate. The wire is drawn to the point and bonded. Since the bonding target surface needs to be heated in advance during bonding depending on the bonding target, the substrate mounting portion on which the substrate is mounted has a heating unit such as an electric heater. Therefore, when high-temperature bonding is required, radiant heat from the substrate heated by the substrate mounting portion is transmitted to the horn, and the temperature of the horn rises.
【０００３】[0003]
【発明が解決しようとする課題】ところが、ボンディン
グワイヤを保持するキャピラリツールは片持ち状態で支
持されたホーンの先端部に装着されているため、ホーン
の温度変化によって位置が変動しやすい。このため、基
板を加熱しながらボンディングを行う場合には、キャピ
ラリツールのボンディング位置に位置ずれを生じやす
く、ボンディング不良を招く原因となっていた。However, since the capillary tool for holding the bonding wire is mounted on the tip of the horn supported in a cantilever state, the position tends to fluctuate due to a temperature change of the horn. For this reason, when bonding is performed while heating the substrate, the bonding position of the capillary tool is likely to be displaced, which has caused a bonding failure.
【０００４】そこで本発明は、基板からの輻射熱による
熱影響を防止して位置ずれのないボンディングを行うこ
とができるワイヤボンディング装置を提供することを目
的とする。Accordingly, an object of the present invention is to provide a wire bonding apparatus capable of performing bonding without displacement by preventing a thermal effect due to radiant heat from a substrate.
【０００５】[0005]
【課題を解決するための手段】請求項１記載のワイヤボ
ンディング装置は、基板に搭載された半導体素子の外部
接続用電極と基板の回路電極とをワイヤによって電気的
に接続するワイヤボンディング装置であって、前記基板
を載置し加熱する基板載置部と、ワイヤを供給するワイ
ヤ供給部と、ワイヤが挿通しこのワイヤを押し付けるこ
とにより前記外部接続用電極および回路電極にワイヤを
ボンディングするキャピラリツールと、このキャピラリ
ツールを保持するホーンと、前記ホーンの下方に配設さ
れ前記基板載置部から前記ホーンへの伝熱を遮断する遮
熱手段とを備えた。According to a first aspect of the present invention, there is provided a wire bonding apparatus for electrically connecting external connection electrodes of a semiconductor element mounted on a substrate and circuit electrodes of the substrate by wires. A substrate mounting portion for mounting and heating the substrate, a wire supply portion for supplying a wire, and a capillary tool for inserting a wire through the wire and pressing the wire to bond the wire to the external connection electrode and the circuit electrode. A horn for holding the capillary tool; and a heat shielding means disposed below the horn to block heat transfer from the substrate mounting portion to the horn.
【０００６】請求項２記載のワイヤボンディング装置
は、請求項１記載のワイヤボンディング装置であって、
前記遮熱手段を冷却する冷却手段を備えた。A wire bonding apparatus according to a second aspect is the wire bonding apparatus according to the first aspect,
A cooling means for cooling the heat shielding means is provided.
【０００７】本発明によれば、ホーンの下方に配設され
前記基板載置部から前記ホーンへの伝熱を遮断する遮熱
手段を備えることにより、基板からの輻射熱がホーンに
伝達されることによる熱影響を防止して位置ずれのない
ボンディングを行うことができる。According to the present invention, radiant heat from the substrate is transmitted to the horn by providing a heat shielding means disposed below the horn to block heat transfer from the substrate mounting portion to the horn. Can prevent the influence of heat, and can perform bonding without displacement.
【０００８】[0008]
【発明の実施の形態】次に、本発明の実施の形態を図面
を参照して説明する。図１は本発明の一実施の形態のワ
イヤボンディング装置の斜視図、図２（ａ），（ｂ）は
同ワイヤボンディング装置の部分側面図、図３、図４は
同ワイヤボンディング動作の説明図である。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a perspective view of a wire bonding apparatus according to an embodiment of the present invention, FIGS. 2 (a) and 2 (b) are partial side views of the wire bonding apparatus, and FIGS. It is.
【０００９】まず、図１を参照してワイヤボンディング
装置の全体構造を説明する。基板載置部１の上面には、
基板２が載置されている。基板２にはワイヤボンディン
グ対象のチップ（半導体素子）３が搭載されている。チ
ップ３の周辺にはワイヤボンディング点である回路電極
５が多数形成されており、ワイヤボンディングにおいて
は、チップ３の外部接続用電極と回路電極５とをワイヤ
によって接続する。First, the overall structure of the wire bonding apparatus will be described with reference to FIG. On the upper surface of the substrate mounting portion 1,
The substrate 2 is placed. A chip (semiconductor element) 3 to be wire-bonded is mounted on the substrate 2. A large number of circuit electrodes 5 serving as wire bonding points are formed around the chip 3. In the wire bonding, the external connection electrodes of the chip 3 and the circuit electrodes 5 are connected by wires.
【００１０】基板２上には押さえ板６が配設されてい
る。押さえ板６はシリンダ７のロッド７ａに連結されて
おり、ロッド７ａが引き込むと基板２は押さえ板６で押
さえつけられて固定される。基板載置部１の側方には可
動テーブル１０が設置されており、可動テーブル１０上
には駆動ボックス１１が設けられている。駆動ボックス
１１からはホーン１２が前方へ延出しており、ホーン１
２の先端部にはキャピラリツール１３が保持されてい
る。A holding plate 6 is provided on the substrate 2. The holding plate 6 is connected to a rod 7 a of a cylinder 7. When the rod 7 a is pulled in, the substrate 2 is pressed and fixed by the holding plate 6. A movable table 10 is provided on the side of the substrate mounting unit 1, and a drive box 11 is provided on the movable table 10. A horn 12 extends forward from the drive box 11, and the horn 1
A capillary tool 13 is held at the tip of the second tool 2.
【００１１】キャピラリツール１３には、ワイヤボンデ
ィングに用いられるワイヤ１５が挿通する。ワイヤ１５
はワイヤ供給部であるスプール１４に卷回された状態で
供給され、スプール１４から繰り出されたワイヤ１５は
ガイドクランパ１７によってガイドされ、カットクラン
パ１６を経てキャピラリツール１３に挿通する。カット
クランパ１６は開閉動作を行うことによりワイヤ１５を
クランプして固定する。すなわち、カットクランパ１６
はワイヤをクランプするクランプ手段となっている。キ
ャピラリツール１３の下端部に近接して、トーチ１９が
配設されている。トーチ１９は、キャピラリツール１３
の下端部から突出したワイヤ１５との間でスパークを発
生させることにより、ワイヤ１５の下端部に金属のボー
ルを形成する。A wire 15 used for wire bonding is inserted through the capillary tool 13. Wire 15
Is supplied in a state of being wound on a spool 14 serving as a wire supply unit. The wire 15 fed from the spool 14 is guided by a guide clamper 17, and is inserted into a capillary tool 13 via a cut clamper 16. The cut clamper 16 performs opening and closing operations to clamp and fix the wire 15. That is, the cut clamper 16
Are clamping means for clamping the wire. A torch 19 is provided near the lower end of the capillary tool 13. The torch 19 is a capillary tool 13
A metal ball is formed at the lower end of the wire 15 by generating a spark with the wire 15 protruding from the lower end of the wire 15.
【００１２】Ｘ方向モータ１０ＸとＹ方向モータ１０Ｙ
が駆動して可動テーブル１０が作動すると、可動テーブ
ル１０上の駆動ボックス１１、ホーン１２、キャピラリ
ツール１３などはＸ方向やＹ方向へ水平移動する。ま
た、キャピラリツール１３は駆動ボックス１１内に収納
され図示しないＺ方向モータに駆動され上下動を行う。X direction motor 10X and Y direction motor 10Y
Is driven to move the movable table 10, the drive box 11, the horn 12, the capillary tool 13 and the like on the movable table 10 move horizontally in the X direction and the Y direction. The capillary tool 13 is housed in the drive box 11 and driven up and down by a Z-direction motor (not shown).
【００１３】図２（ａ），（ｂ）に示すように、ホーン
１２の下方には遮熱板２０がほぼホーン１２の全長にわ
たって配設されている。遮熱板２０は基板載置部１に内
蔵されたヒータ１ａによって加熱された基板２からホー
ン１２に対して輻射される輻射熱を遮蔽する。したがっ
て遮熱板２０は遮熱手段となっている。また遮熱板２０
の側方には遮熱板２０に沿ってノズルパイプ２１が配設
されている。ノズルパイプ２１には長さ方向に多数のエ
アノズル孔２２が設けられており、図外の給気手段を駆
動することにより、エアノズル孔２２から遮熱板２０に
対してエアが吹き付けられる。これにより、基板２から
の輻射熱により加熱され温度が上昇した遮熱板２０は冷
却され、遮熱板２０の温度が過度に上昇することがな
い。したがって、ノズルパイプ２１及び図外の給気手段
は遮熱板２０を冷却する冷却手段となっている。As shown in FIGS. 2A and 2B, a heat shield plate 20 is provided below the horn 12 over substantially the entire length of the horn 12. The heat shield plate 20 shields radiant heat radiated from the substrate 2 heated by the heater 1 a incorporated in the substrate mounting portion 1 to the horn 12. Therefore, the heat shield plate 20 is a heat shield means. In addition, heat shield plate 20
A nozzle pipe 21 is arranged along the heat shield plate 20 on the side of the nozzle pipe 21. A large number of air nozzle holes 22 are provided in the nozzle pipe 21 in the length direction. By driving an air supply means (not shown), air is blown from the air nozzle holes 22 to the heat shield plate 20. Accordingly, the heat shield plate 20 heated by the radiant heat from the substrate 2 and raised in temperature is cooled, and the temperature of the heat shield plate 20 does not excessively increase. Therefore, the nozzle pipe 21 and the air supply means (not shown) are cooling means for cooling the heat shield plate 20.
【００１４】このワイヤボンディング装置は上記の構成
より成り、以下その動作について図３、図４を参照して
説明する。なお、図３（ａ）〜（ｃ）および図４（ａ）
〜（ｃ）は、一連の動作を動作順に示している。図３
（ａ）は初期状態であって、この状態でキャピラリツー
ル１３の下端部からワイヤ１５を下方へ導出し、キャピ
ラリツール１３の上方のクランパ１６でワイヤ１５をク
ランプしてワイヤ１５を固定している。１５’は、前回
のワイヤボンディング動作でチップ３と基板２を接続し
たワイヤである。This wire bonding apparatus has the above-described configuration, and its operation will be described below with reference to FIGS. 3 (a) to 3 (c) and FIG. 4 (a)
(C) shows a series of operations in the order of operation. FIG.
(A) is an initial state. In this state, the wire 15 is led out from the lower end of the capillary tool 13 and the wire 15 is clamped by the clamper 16 above the capillary tool 13 to fix the wire 15. . Reference numeral 15 'denotes a wire connecting the chip 3 and the substrate 2 in the previous wire bonding operation.
【００１５】次に図３（ｂ）に示すように、ワイヤ１５
の下端部に接近したトーチ１９に高電圧を印加すること
により、ワイヤ１５の下端部とトーチ１９の先端部との
間に電気的スパークを発生させ、ワイヤ１５の下端部に
ボール２０を形成する。Next, as shown in FIG.
By applying a high voltage to the torch 19 approaching the lower end of the wire 15, an electric spark is generated between the lower end of the wire 15 and the tip of the torch 19, and the ball 20 is formed at the lower end of the wire 15. .
【００１６】次に図３（ｃ）で示すように、クランパ１
６を開いてワイヤ１５のクランプ状態を解除するととも
に、キャピラリツール１３を下降させてボール２０をチ
ップ３上面の外部接続用電極に押し付けてボンディング
する。次いで図４（ａ）に示すように、キャピラリツー
ル１３を上昇させ、最高点まで到達したならばカットク
ランパ１６を閉じる。そしてこの状態でキャピラリツー
ル１３を基板２の回路電極５の上方に移動させ、キャピ
ラリツール１３の下端部を所定の軌跡を描かせながら下
降させワイヤ１５のループを形成させて、図４（ｂ）に
示すようにワイヤ１５を基板２の回路電極５に押し付け
てボンディングする。Next, as shown in FIG.
6, the wire 15 is released from the clamped state, and the capillary tool 13 is lowered to press the ball 20 against the external connection electrode on the upper surface of the chip 3 for bonding. Next, as shown in FIG. 4A, the capillary tool 13 is raised, and when the capillary tool 13 reaches the highest point, the cut clamper 16 is closed. Then, in this state, the capillary tool 13 is moved above the circuit electrode 5 of the substrate 2, and the lower end of the capillary tool 13 is lowered while drawing a predetermined trajectory to form a loop of the wire 15, and FIG. The wire 15 is pressed against the circuit electrode 5 of the substrate 2 for bonding as shown in FIG.
【００１７】次にキャピラリツール１３を上昇させてカ
ットクランパ１６によってクランプされたワイヤ１５を
引き上げれば、ワイヤ１５はボンディング点ａでカット
される。これにより、１つのボンディング点でのボンデ
ィングが完了し、次いで同様のワイヤボンディング動作
が各ボンディング点について繰り返される。Next, when the capillary tool 13 is raised and the wire 15 clamped by the cut clamper 16 is pulled up, the wire 15 is cut at the bonding point a. This completes the bonding at one bonding point, and then the same wire bonding operation is repeated for each bonding point.
【００１８】このワイヤボンディング動作において、基
板２は基板載置部１に内蔵されたヒータによって加熱さ
れ、温度が上昇している。このため基板２からは上方に
対して熱が輻射され、この輻射熱によって周囲の部品や
機構は加熱される。この状態においても、遮熱板２０に
よりホーン１２に対して輻射される輻射熱は大部分が遮
蔽されており、さらにノズルパイプ２１からの冷却エア
によって遮熱板２０自体が常に冷却されるため、ホーン
１２が過度に温度上昇することがない。したがって、ホ
ーン１２の熱変形に起因するキャピラリツール１３の位
置ずれが発生せず、常に良好なボンディング精度を確保
することができる。In this wire bonding operation, the substrate 2 is heated by a heater built in the substrate mounting portion 1, and the temperature is rising. Therefore, heat is radiated upward from the substrate 2, and the surrounding components and mechanisms are heated by the radiated heat. Even in this state, the radiant heat radiated to the horn 12 by the heat shield plate 20 is mostly shielded, and furthermore, the heat shield plate 20 itself is always cooled by the cooling air from the nozzle pipe 21. 12 does not rise excessively. Therefore, no displacement of the capillary tool 13 due to thermal deformation of the horn 12 occurs, and good bonding accuracy can always be ensured.
【００１９】[0019]
【発明の効果】本発明によれば、ホーンの下方に配設さ
れ前記基板載置部から前記ホーンへの伝熱を遮断する遮
熱手段を備えたので、基板載置部によって加熱された基
板からの輻射熱がホーンに伝達されることによる熱影響
を防止して、位置ずれのない良好なボンディングを行う
ことができる。According to the present invention, since the heat-shielding means provided below the horn for interrupting heat transfer from the substrate mounting portion to the horn is provided, the substrate heated by the substrate mounting portion is provided. The radiant heat from the horn can be prevented from being affected by heat transmitted to the horn, and good bonding without displacement can be performed.
【図１】本発明の一実施の形態のワイヤボンディング装
置の斜視図FIG. 1 is a perspective view of a wire bonding apparatus according to an embodiment of the present invention.
【図２】（ａ）本発明の一実施の形態のワイヤボンディ
ング装置の部分側面図 （ｂ）本発明の一実施の形態のワイヤボンディング装置
の部分側面図FIG. 2A is a partial side view of a wire bonding apparatus according to an embodiment of the present invention; FIG. 2B is a partial side view of a wire bonding apparatus according to an embodiment of the present invention;
【図３】本発明の一実施の形態のワイヤボンディング動
作の説明図FIG. 3 is an explanatory diagram of a wire bonding operation according to an embodiment of the present invention.
【図４】本発明の一実施の形態のワイヤボンディング動
作の説明図FIG. 4 is an explanatory diagram of a wire bonding operation according to an embodiment of the present invention.
１ 基板載置部 ２ 基板 ３ チップ ５ 回路電極 ６ 押さえ板 １０ 移動テーブル １２ ホーン １３ キャピラリツール ２０ 遮熱板 ２１ ノズルパイプ DESCRIPTION OF SYMBOLS 1 Substrate mounting part 2 Substrate 3 Chip 5 Circuit electrode 6 Holding plate 10 Moving table 12 Horn 13 Capillary tool 20 Heat shield plate 21 Nozzle pipe
Claims (2)
電極と基板の回路電極とをワイヤによって電気的に接続
するワイヤボンディング装置であって、前記基板を載置
し加熱する基板載置部と、ワイヤを供給するワイヤ供給
部と、ワイヤが挿通しこのワイヤを押し付けることによ
り前記外部接続用電極および回路電極にワイヤをボンデ
ィングするキャピラリツールと、このキャピラリツール
を保持するホーンと、前記ホーンの下方に配設され前記
基板載置部から前記ホーンへの伝熱を遮断する遮熱手段
とを備えたことを特徴とするワイヤボンディング装置。1. A wire bonding apparatus for electrically connecting an external connection electrode of a semiconductor element mounted on a substrate and a circuit electrode of the substrate by a wire, wherein the substrate mounting portion mounts and heats the substrate. A wire supply unit that supplies a wire, a capillary tool that inserts the wire and presses the wire to bond the wire to the external connection electrode and the circuit electrode, a horn that holds the capillary tool, and a horn of the horn. A wire-bonding apparatus, comprising: heat-shielding means disposed below and configured to interrupt heat transfer from the substrate mounting portion to the horn.
ことを特徴とする請求項１記載のワイヤボンディング装
置。2. The wire bonding apparatus according to claim 1, further comprising cooling means for cooling said heat shielding means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14287099A JP2000332050A (en) | 1999-05-24 | 1999-05-24 | Wire bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14287099A JP2000332050A (en) | 1999-05-24 | 1999-05-24 | Wire bonding equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000332050A true JP2000332050A (en) | 2000-11-30 |
Family
ID=15325525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14287099A Pending JP2000332050A (en) | 1999-05-24 | 1999-05-24 | Wire bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000332050A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7226815B2 (en) | 2002-05-31 | 2007-06-05 | Renesas Technology Corp. | Method for manufacturing semiconductor device |
| US7780056B2 (en) | 2007-02-28 | 2010-08-24 | Kabushiki Kaisha Shinkawa | Horn attachment arm |
-
1999
- 1999-05-24 JP JP14287099A patent/JP2000332050A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7226815B2 (en) | 2002-05-31 | 2007-06-05 | Renesas Technology Corp. | Method for manufacturing semiconductor device |
| US7416970B2 (en) | 2002-05-31 | 2008-08-26 | Renesas Technology Corp. | Method for manufacturing semiconductor device |
| US7780056B2 (en) | 2007-02-28 | 2010-08-24 | Kabushiki Kaisha Shinkawa | Horn attachment arm |
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