JP2000331640A - Ion implanting device and manufacture of semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion implanting device allowing two types of ion implanting processing, batch type and single wafer type, and a manufacturing method of a semiconductor device using the ion implanting device. SOLUTION: (1) An ion implanting device has multiple ion implantation subject material supporting parts 4 placing plate like ion implanting subject materials 2 (wafer) at places corresponding to a periphery of a cylinder along the periphery with ion implantation subject surfaces facing outward. The individual ion implantation subject material supporting parts 4 are placed sequentially to an ion beam irradiated position by a rotation of the cylinder correspondent. (2) A manufacturing method of a semiconductor device obtains the semiconductor device processing the single or the multiple semiconductor wafers 2 using the ion implanting device in (1).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an ion implantation apparatus and a method for manufacturing a semiconductor device using the same. The ion implantation apparatus according to the present invention can be used for ion implantation technology in various fields such as a semiconductor manufacturing process, and the method for manufacturing a semiconductor device according to the present invention includes a step of performing ion implantation on a semiconductor wafer. It can be used when manufacturing various semiconductor devices.

[0002]

2. Description of the Related Art Conventionally, ion implantation techniques have been used in various fields such as formation of electronic materials. For example, it is used as an important process in the process of manufacturing a semiconductor device. For example, in order to form a desired impurity distribution on a semiconductor wafer such as silicon, impurity ions are introduced by ion implantation into an ion-implanted surface (usually, a device forming surface) of a silicon substrate or the like as an ion-implanted material. Because of that, it is widely used.

[0003] A conventional ion implantation apparatus will be described with reference to an apparatus in which ions are implanted into a wafer.

[0004] Conventional ion implantation apparatuses of this type include those of the "batch type" and those of the "single-wafer type". In the "batch method", a disk-shaped wafer supporting member called a disk is used, a plurality of wafers are mounted on the disk, and ion implantation is performed while rotating the disk at high speed and scanning up and down. In the “single wafer method”, a wafer supporting member called a disk (or a platen) is used, and only one wafer is placed on the member, and the ion beam is scanned in the X direction (referred to on the wafer surface). The ion implantation is performed while moving the wafer up and down (Y direction on the wafer surface). The structure, operation, and operation of the two systems will be described below.

[0005] Fig. 5 is a schematic diagram showing a state at the time of ion implantation in a general batch-type ion implantation apparatus. Ion implanted material 2 (wafer) on rotating disk 1a
The ion beam 3 is irradiated to perform ion implantation. The scanning directions are indicated by reference numerals A and B. That is, ion implantation is performed while rotating in the direction A at high speed and scanning up and down in the direction B. The disk 1a is provided with a plurality of platens for supporting the ion-implanted material 2 (wafer), and a plurality of wafers corresponding to the number of platens are usually supported on the disk 1a. According to this batch-type ion implantation apparatus, a plurality of wafers can be ion-implanted at one time, but on the other hand, there is a problem that a large space of an implantation part is required, and ion implantation is performed under different conditions one by one. Is difficult to perform. In addition, it is necessary to arrange a wafer on the entire platen of the disk 1a, and there is a problem that the transport time of the ion-implanted material 2 (wafer) to be set is long. That is, even when ion implantation is performed on a small number of ion implanted materials 2 (wafers), the platen will be damaged unless a dummy wafer or the like is set on an empty platen.

FIG. 6 is a schematic diagram showing a state of a general single-wafer ion implantation apparatus at the time of ion implantation. Here, a platen 1b that supports one ion-implanted material 2 (wafer) is provided on a disk, and ions are implanted one by one into the ion-implanted material 2 (wafer) set on the platen 1b. At this time, in general, the ion beam 3 is scanned in the X direction as shown by reference
On the other hand, ion implantation is performed while vertically moving the ion-implanted material 2 (wafer) as indicated by reference numeral D. In this method, since the ion-implanted material 2 (wafer) is processed one by one, there is a problem that the processing time required for one wafer is increased depending on conditions.

[0007]

As described above, each of the prior arts has its own advantages and disadvantages. The single-wafer method cannot process a plurality of ion-implanted materials, and the batch method requires only one or a small number of ions. There is a drawback that processing is difficult.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and is capable of processing a plurality of ion-implanted materials, and capable of processing a larger number of sheets. The ion implantation can be performed in a short time, and one ion implantation material can be processed. A small number of ion implantation materials can be easily processed, and the ion implantation can be performed under different conditions one by one. It is an object of the present invention to provide an ion implantation apparatus which can perform processing under different conditions even in a state where a plurality of wafers are set, or can easily achieve ion implantation under different conditions by a small number of wafers. It is another object of the present invention to provide a method for manufacturing a semiconductor device using such an ion implantation apparatus.

[0009]

According to the ion implantation apparatus of the present invention, a plurality of flat ion-implanted materials are placed at positions corresponding to the outer periphery of a cylindrical shape so that the ion-implanted surface is formed along the outer periphery. It has a plurality of ion-implanted material support portions that can be arranged at positions facing outward, and the ion-implanted material support portions are sequentially rotated by rotating around a point corresponding to the cylindrical rotation center axis. The ion implanted material supporting portion can come to the ion beam irradiation position.

In a method of manufacturing a semiconductor device according to the present invention, a semiconductor wafer is supported on at least one of the plurality of ion-implanted material support portions by using the ion implanter according to the present invention. The method includes a step of performing ion implantation on the wafer.

According to the present invention, it can be said that an effect combining the advantages of the conventional single-wafer ion implantation apparatus and the advantages of the batch method can be obtained.

That is, since a plurality of flat ion-implanted materials can be arranged at positions corresponding to the outer periphery of a cylindrical shape, a plurality of ion-implanted materials can be processed in one step of the ion implantation operation. Can be achieved. This is because the surface to be ion-implanted is at a position facing outward, so that the ion-implantation process can be sequentially and continuously performed by rotating the surface. In addition, a plurality of the support structures can be used in combination to process a larger number of ion implantation materials. Since the ion-implanted material is arranged at a position corresponding to the outer periphery of the cylindrical shape, this support structure can be combined with a plurality of cylindrical structures by connecting the end faces of the cylindrical shape. A large number of ion-implanted materials can be ion-implanted in one step of the ion-implantation operation. Therefore, the processing time can be further reduced, and the efficiency can be increased.

Further, a plurality of flat ion-implanted materials are
Since it is arranged at a position corresponding to the outer periphery of the cylindrical shape, it is possible to process only one sheet (or a small number of sheets) or to change the conditions one by one (or a small number of sheets). This is because the ion-implanted material is not arranged on a plane, so that the ion-implanted material other than the ion-implanted material being processed is not irradiated with ions, and even if only one sheet is used or the conditions are changed, it can be arbitrarily performed. . For this reason, what is called a dummy wafer for protecting the support portion is unnecessary. As described above, in this configuration, it is possible to perform ion implantation under different conditions one by one, even in a state where a plurality of processing under different conditions are set, or to easily perform ion implantation under different conditions for a small number of wafers. Can be achieved.

As described above, according to the present invention, two types of ion implantation processes, a batch system and a single wafer system, can be performed by one ion implantation apparatus. That is, it is possible to realize a process having the advantages of the conventional device.

According to the present invention, one semiconductor wafer is supported by using the above-mentioned advantageous ion implantation apparatus.
A semiconductor device can be obtained by performing ion implantation on the semiconductor wafer, or a semiconductor device can be obtained by supporting two or more or a large number of semiconductor wafers. It is possible to obtain a highly reliable semiconductor device by performing ion implantation under appropriate conditions for each semiconductor wafer, or to process a large number of semiconductor devices in a short time to increase productivity. .

Japanese Patent Application Laid-Open Nos. 4-366540 and 5-159736 describe a technique in which a semiconductor substrate is arranged on an inner wall of a drum and the substrate is pressed against the inner wall of the drum by centrifugal force. But this is a uniform ion implantation,
Alternatively, the configuration and the operation and effect are completely different from those of the present invention, which is a technique for achieving damage-free holding and which can be disposed at a position corresponding to the outer periphery of a cylindrical shape at a position where an ion implantation surface faces outward.

[0017]

Embodiments of the present invention will be further described below. In a specific embodiment described below, the present invention is applied to ion implantation for implanting impurities into a silicon semiconductor substrate (wafer), and ion implantation having the above-described advantages is performed. Is what you get. Here, each of the above-mentioned advantages is obtained by providing a specific new mechanism as described below in the ion implantation apparatus. However, it goes without saying that it can be used for ion implantation not only in the case of manufacturing silicon semiconductor devices but also in various fields.

First Embodiment FIG. 1 shows the concept of an ion implantation apparatus according to this embodiment. Here, on the outer periphery of the cylindrical (drum-shaped) support member 1, a plurality of ion-implanted material support portions 4 (platens) for supporting a wafer as the flat ion-implanted material 2 are provided. The flat ion-implanted material 2 (wafer) is set on the ion-implanted material support portion 4 so that the ion-implanted surface faces outward.

As described above, the cylindrical (drum-shaped) support member 1
An ion-implanted material 2 (wafer) is set on the outer peripheral side of the substrate, and an ion beam 3 is irradiated to perform ion implantation. The ion beam 3 is scanned in the X direction (direction E in FIG. 1), and the cylindrical (drum-shaped) support member 1 is rotationally scanned (reference F in FIG. 1) with respect to the ion beam 3. As a result, the ion beam 3 is always implanted at a constant angle into all the ion implanted materials 2 (all wafers).

The cylindrical (drum-shaped) support member 1 can change the implantation tilt angle by changing the angle with respect to the ion beam 3. That is, FIG. 2 shows a cylindrical (drum-shaped) support member 1 provided with the ion-implanted material support 4 and having the ion-implanted material 2 (wafer) set thereon, as shown in FIG. Figure seen from
In other words, FIG.
As shown by reference numeral H in the figure, a cylindrical (drum-shaped) support member 1
By tilting the injection angle, the injection angle can be changed. As described above, according to this configuration, the ion implantation material 2 (wafer) can be brought to a position where it can be tilted with respect to the ion beam, and the implantation angle can be arbitrarily changed. is there.

According to this embodiment, ions can be implanted into one ion-implanted material 2 (wafer) by a single wafer method. That is, the rotation scan of the cylindrical (drum-shaped) support member 1 is stopped, and the symbol G in FIG.
By performing the vertical scan (scan moving along the surface corresponding to the cylindrical end surface) shown in FIG. 5, the ion implantation operation in the single wafer mode becomes possible. At this time, no dummy wafer is required. Therefore, the problem of the conventional batch method,
That is, although the number of wafers to be processed is small (one or a few), a problem that wasteful transport time is required because a dummy wafer must be mounted does not occur.

As described above, in this embodiment,
A plurality of ion-implanted materials in which a plurality of plate-like ion-implanted materials 2 (wafers) can be arranged at positions corresponding to the outer periphery of a cylindrical shape so that their ion-implanted surfaces face outward along the outer periphery. The ion-implanted material support portion 4 has a support portion 4 (platen), and the ion-implanted material support portion 4 is sequentially rotated around a point corresponding to the rotation center axis of the cylindrical shape so that each ion-implanted material support portion is irradiated with an ion beam. In this configuration, it is possible to come to the position.
Since it is configured to be formed on the outer periphery of the cylindrical support member 1, the advantage that the ion implantation can be performed by a single wafer system or a batch system can be exhibited. Further, the space of the implantation part can be reduced compared with the conventional batch-type ion implantation apparatus, and the installation area can be reduced. Therefore, for example, there is an advantage that it can contribute to effective use of the clean room.

Second Embodiment Next, a second embodiment will be described with reference to FIG. This embodiment is obtained by combining a plurality of structures of the first embodiment shown in FIG. That is, as shown in FIG. 3, the support member 1 on which the ion-implanted material support portion 4 is formed is composed of a plurality of (three in the figure) support members 1 by connecting the side surfaces thereof with alligators. Things. This becomes possible as a result of providing the ion-implanted material supporting portion 4 in a form along the outer periphery at a position corresponding to the outer periphery of the cylindrical shape, which is impossible with the conventional technique as shown in FIG. That is.

With such a combination, two or more support structures can be installed for one ion implantation apparatus, so that a large number of ion-implanted materials 2 (many wafers) can be processed in a short time. Is possible. Therefore, the efficiency can be further improved. The effect of being able to use a single-wafer method and facilitating the processing of a small number of sheets remains unchanged.

Third Embodiment Next, a third embodiment will be described with reference to FIG. This embodiment is different from the first embodiment shown in FIG. 1 in that it has a structure including a cylindrical support member 1, whereas the support member 5 has a skeleton shape. That is, FIG.
As shown in the figure, a plurality of lines (three in the illustrated example) corresponding to the diameter of the circle are constituted by a skeleton in which the lines are combined at a position indicated by reference numeral 6 corresponding to the center of the circle. An ion-implanted material 2 (wafer) is arranged at the outer end of the skeleton. At this time, the ion-implanted material 2 (wafer) is arranged at right angles to a line corresponding to the diameter of the circle. This makes it possible to arrange the ion-implanted material 2 (wafer) with its surface facing outward.

This embodiment has the same advantages as those of the above-described embodiment.

Embodiment 4 This embodiment is different from the supporting member 5 of Embodiment 3 described above.
Are connected on the side as in Embodiment 2 (for example, they are connected to each other through a connecting rod at the connecting point 6), and a plurality of these are combined (not shown). This example has the same effect as the second embodiment.

[0028]

According to the ion implantation apparatus of the present invention,
It is possible to process a plurality of ion-implanted materials (having an ion-implanted material support portion), and it is also possible to perform a large number of treatments (combination of two or more is possible). Injection is possible, and one ion implanted material can be processed (use of a single wafer method is possible), and a small number of ion implanted materials can be easily processed.
It is possible to perform ion implantation under different conditions one by one, and it is also possible to perform processing under different conditions even when a plurality of wafers are set, or to easily perform ion implantation under different conditions for a small number of wafers. Further, according to the method for manufacturing a semiconductor device of the present invention, a semiconductor device can be manufactured with high reliability or high productivity by using such an ion implantation apparatus.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of an ion implantation apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a case where an ion implantation angle is changed in the first embodiment.

FIG. 3 is a diagram illustrating a configuration of an ion implantation apparatus according to a second embodiment of the present invention.

FIG. 4 is a diagram illustrating a configuration of an ion implantation apparatus according to a third embodiment of the present invention.

FIG. 5 is a view showing a conventional ion implantation apparatus (batch type).

FIG. 6 is a view showing a conventional ion implantation apparatus (single wafer type).

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Support member, 2 ... Ion-implanted material (wafer), 3 ... Ion beam, 4 ... Ion-implanted material support part, 5 ... Support member.

Claims (8)

[Claims] 1. A plurality of ion-implanted substrates in which a plurality of plate-like ion-implanted materials can be arranged at positions corresponding to the outer periphery of a cylindrical shape so that their ion-implanted surfaces face outward along the outer periphery. The ion-implanted material support portion is rotated around a point corresponding to the rotation axis of the cylindrical shape so that each ion-implanted material support portion sequentially comes to the ion beam irradiation position. An ion implantation apparatus characterized in that: 2. The ion implantation apparatus according to claim 1, wherein the ion-implanted material support is formed on an outer periphery of a cylindrical support member. 3. The ion implantation apparatus according to claim 1, wherein the ion implantation apparatus is movable along a surface corresponding to the cylindrical end surface. 4. The ion implantation apparatus according to claim 1, wherein the ion implantation material can be brought to a position where it can be tilted with respect to the ion beam. 5. The ion implantation apparatus according to claim 2, wherein a plurality of structures in which the ion-implanted material support portion is formed on the cylindrical support member are combined. 6. A skeleton having a form in which a plurality of lines corresponding to the diameter of a circle are combined and combined at a position corresponding to the center of the circle, and an outer end of the skeleton has a shape corresponding to the diameter of the circle. 2. The ion implanting apparatus according to claim 1, wherein the ion implanted material supporting portion is provided so that the ion implanted material is arranged at a right angle to the corresponding line. 7. The ion implantation apparatus according to claim 6, wherein a plurality of structures having an ion-implanted material support at the outer end of the skeleton are combined. 8. A plurality of ion-implanted substrates, wherein a plurality of plate-shaped ion-implanted materials can be arranged at positions corresponding to the outer periphery of a cylindrical shape so that their ion-implanted surfaces face outward along the outer periphery. The ion-implanted material support portion is rotated around a point corresponding to the rotation axis of the cylindrical shape so that each ion-implanted material support portion sequentially comes to the ion beam irradiation position. Using an ion implanter that enables the semiconductor wafer to be supported on at least one of the plurality of ion-implanted material supports, and performing ion implantation on the semiconductor wafer. Semiconductor device manufacturing method.