JP2000328004A - Composition for forming film and material for forming insulating film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve mechanical strengths of a coating film to enable its formation having uniform thickness, hardly to generate cracks and to have a low dielectric constant by including a hydrolytic condensation product of two silane compounds. SOLUTION: A composition for forming a film is obtained by including a hydrolytic condensation product of (A) 100 pts.wt. (conversion into the fully hydrolytic condensation product) of a silane compound of the formula: (R1)aSi(OR2)4-a and 4-200 pts.wt. (conversion into the fully hydrolytic condensation product) of a silane compound of the formula: (R3)bSi(OR4)4-b. In the formulas, R1 is a monovalent group selected from methyl, ethyl, vinyl and phenyl; a is 0-2; R3 is a 4 or more C straight chain alkyl, branched chain alkyl or alicyclic alkyl; R4 is a monovalent organic group; and b is 1-2. The hydrolytic condensation product is obtained by hydrolyzing and/or condensing the components A and B under the presence of a catalyst and water in an organic solvent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming composition, and more particularly, to a film having a uniform thickness suitable for an interlayer insulating film in a semiconductor device or the like, and in which cracks are formed. The present invention relates to a film-forming composition which is difficult, gives a very low dielectric constant, and has excellent mechanical strength of a coating film.

[0002]

2. Description of the Related Art Conventionally, a silica (SiO ₂ ) film formed by a vacuum process such as a CVD method has been frequently used as an interlayer insulating film in a semiconductor device or the like. And in recent years,
In order to form a more uniform interlayer insulating film, S
A coating type insulating film called a OG (Spin on Glass) film, which is mainly composed of a hydrolysis product of tetraalkoxylan, has been used. Also, with the high integration of semiconductor elements and the like, an interlayer insulating film having a low dielectric constant and mainly containing organopolysiloxane called organic SOG has been developed. However, with higher integration and multilayering of semiconductor devices and the like, better electrical insulation between conductors is required, and therefore, an interlayer insulating film material having a lower dielectric constant and excellent crack resistance is required. It has become.

[0003] Japanese Patent Application Laid-Open No. 6-181201 discloses a coating composition for forming an insulating film having a lower dielectric constant as an interlayer insulating film material. The coating type composition has a low water absorption and is intended to provide an insulating film of a semiconductor device having excellent crack resistance.
Titanium, zirconium, niobium and tantalum; an organometallic compound containing at least one element selected from the group consisting of polycondensation of an organosilicon compound having at least one alkoxy group in the molecule; This is a coating composition for forming an insulating film, which is mainly composed of an oligomer.

[0004] WO96 / 00758 also discloses that
Silica-based insulation, which is used for forming interlayer insulation films of multilayer wiring boards and consists of alkoxysilanes, metal alkoxides other than silane, organic solvents, etc., is capable of thick film coating and has excellent oxygen plasma ashing resistance. A film forming material is disclosed.

Japanese Patent Application Laid-Open No. Hei 3-20377 discloses that
A coating liquid for forming an oxide film, which is useful for flattening the surface of electronic components and the like, insulating between layers, and the like, is disclosed. The coating solution for forming an oxide film provides a uniform coating solution without generation of a gel-like substance. Further, by using this coating solution, curing at a high temperature and treatment by oxygen plasma are performed. Even so, the purpose is to obtain a good oxide film without cracks. The composition is a coating solution for forming an oxide film obtained by hydrolyzing and polymerizing a predetermined silane compound and a predetermined chelate compound in the presence of an organic solvent.

However, as described above, when a metal chelate compound such as titanium or zirconium is combined with a silane compound, the uniformity of the coating film is not excellent, and further, the dielectric constant, crack resistance and the like are not well-balanced.

[0007]

The present invention relates to a film-forming composition for solving the above problems, and more particularly, to a composition suitable for an interlayer insulating film in a semiconductor device or the like.
With the object of providing a film-forming composition capable of forming a coating film having a uniform thickness, hardly causing cracks, giving a very low dielectric constant, and having an excellent balance of mechanical strength and the like of the coating film. I have.

[0008]

The present invention relates to (A) a compound represented by the following general formula (1) (hereinafter also referred to as "component (A)"), and (R ¹ ) _a Si (OR ² ) _4-a (1) (R ¹ represents a monovalent organic group selected from a methyl group, an ethyl group, a vinyl group, and a phenyl group, R ² represents a monovalent organic group, and a represents (B is an integer of 0 to 2.) (B) A compound represented by the following general formula (2) (hereinafter also referred to as “component (B)”) (R ³ ) _b Si (OR ⁴ ) _4-b ... (2) (R ³ represents a linear alkyl group having 4 or more carbon atoms, a branched alkyl group, or an aliphatic cyclic alkyl group, R ⁴ represents a monovalent organic group, and b represents an integer of 1 to 2. Comprising a hydrolyzed condensate obtained by hydrolysis and / or condensation in an organic solvent in the presence of a catalyst and water. A. Here, the ratio of the components (A) and (B) is 10% of the component (A) (in terms of complete hydrolysis and condensate).
It is preferable that the component (B) (complete hydrolyzed condensate) is 40 to 200 parts by weight based on 0 part by weight. The present invention also relates to a material for forming an insulating film, comprising the above-described composition for forming a film.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, as a base polymer for forming a film, a hydrolysis condensate which is a hydrolyzate and / or condensate of the component (A) and the component (B) is two-dimensional.
This is a composition having a three-dimensional structure. When the composition of the present invention is applied to a substrate such as a silicon wafer by dipping or spin coating, for example, the grooves between the fine patterns can be sufficiently filled. When the polymerization is carried out, the hydrolyzed condensate of the component (A) and the component (B) generates a polyorganosiloxane having a high molecular weight, and can form a glassy or macromolecular film. The resulting film has good adhesion,
It is possible to form a thick-film insulator which is excellent in flattening, has no cracks, gives a very low dielectric constant, and has excellent mechanical strength of a coating film.

Here, the above-mentioned hydrolyzate is the above (A)
R ² O— group contained in the component and R ⁴ contained in the component (B).
It is not necessary that all O-groups are hydrolyzed. For example, only one may be hydrolyzed, two or more may be hydrolyzed, or a mixture thereof. In addition, the condensate may be a component (A) or (B)
The silanol groups of the hydrolyzate of the components condense to form Si-O-
In the present invention, all of the silanol groups need not be condensed, but a mixture of a slight condensed silanol group and those having different degrees of condensation may be used in the present invention. It is an included concept.

Hereinafter, the component (A) used in the present invention,
The component (B) will be described, and then the method for preparing the composition of the present invention will be described in detail.

Component (A) In the general formula (1), R ² is a monovalent organic group, and examples thereof include an alkyl group, an aryl group, an allyl group, and a glycidyl group. Here, examples of the alkyl group include a methyl group, an ethyl group, a vinyl group, a propyl group, and a butyl group, and preferably have 1 to 5 carbon atoms. And a hydrogen atom may be substituted with a fluorine atom or the like. In the general formula (1), examples of the aryl group include a phenyl group and a naphthyl group.

Specific examples of the compound represented by the general formula (1) include, for example, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-i
so-propoxysilane, tetra-n-butoxysilane,
Tetra-sec-butoxysilane, tetra-tert-
Butoxysilane, tetraphenoxysilane;

Methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltri-iso-propoxysilane, methyltri-n
-Butoxysilane, methyltri-sec-butoxysilane, methyltri-tert-butoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethyltri-iso-propoxysilane, ethyltri-n -Butoxysilane, ethyltri-sec-butoxysilane, ethyltri-tert-butoxysilane,
Ethyl triphenoxy silane, vinyl trimethoxy silane, vinyl triethoxy silane, vinyl tri-n-propoxy silane, vinyl tri-iso-propoxy silane, vinyl tri-n-butoxy silane, vinyl tri-s
ec-butoxysilane, vinyltri-tert-butoxysilane, vinyltriphenoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltri-n-propoxysilane, phenyltri-iso
-Propoxysilane, phenyltri-n-butoxysilane, phenyltri-sec-butoxysilane, phenyltri-tert-butoxysilane, phenyltriphenoxysilane;

Dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyl-di-n-propoxysilane,
Dimethyl-di-iso-propoxysilane, dimethyl-
Di-n-butoxysilane, dimethyl-di-sec-butoxysilane, dimethyl-di-tert-butoxysilane, dimethyldiphenoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyl-di-n
-Propoxysilane, diethyl-di-iso-propoxysilane, diethyl-di-n-butoxysilane, diethyl-di-sec-butoxysilane, diethyl-di-te
rt-butoxysilane, diethyldiphenoxysilane,
Diphenyldimethoxysilane, diphenyl-di-ethoxysilane, diphenyl-di-n-propoxysilane, diphenyl-di-iso-propoxysilane, diphenyl-di-n-butoxysilane, diphenyl-di-sec-
Butoxysilane, diphenyl-di-tert-butoxysilane, diphenyldiphenoxysilane, divinyldimethoxysilane, divinyldiethoxysilane; γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-glycidoxypropyltrimethoxy Silane, γ-glycidoxypropyltriethoxysilane, γ-trifluoropropyltrimethoxysilane, γ-
Trifluoropropyltriethoxysilane; and the like.

Of these, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane,
Tetra-iso-propoxysilane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane, Diphenyldiethoxysilane can be mentioned as a more preferred example. One or more of these components (A) may be used simultaneously.

(B) Component In the above general formula (2), R ³ is a linear alkyl group having 4 or more carbon atoms, preferably 4 to 20 carbon atoms, a branched alkyl group,
Or it is an aliphatic cyclic alkyl group. Here, as the linear alkyl group, n-butyl group, n-pentyl group, n-
Hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-dodecyl group, n-tridecyl group, n-tetradecyl group, n-pentadecyl group, n-
Hexadecyl group, n-heptadecyl group, n-octadecyl group, n-octadecyl group, n-eicosyl group and the like can be mentioned, and the branched alkyl group can be an iso-butyl group, a tert-butyl group and the like. ,
Examples of the aliphatic cyclic alkyl group include a cyclopentyl group, a cyclohexyl group, a dicyclohexyl group, and a tricyclohexyl group. In the general formula (2), R ⁴ represents a monovalent organic group, and R ⁴ in the component (A)
^The same groups as in ² can be mentioned.

Specific examples of the compound represented by the general formula (2) include n-butyltrimethoxysilane, n-butyltriethoxysilane, n-butyltri-iso-propoxysilane, n-butyltri-n-butoxysilane, n-
Butyltri-iso-butoxysilane, n-butyltri-tert-butoxysilane, iso-butyltrimethoxysilane, iso-butyltriethoxysilane, i
so-butyltri-iso-propoxysilane, iso
-Butyltri-n-butoxysilane, iso-butyltri-iso-butoxysisilane, iso-butyltri-
tert-butoxysilane, tert-butyltrimethoxysilane, tert-butyltriethoxysilane, t
tert-butyltri-iso-propoxysilane, te
rt-butyltri-n-butoxysilane, tert-butyltri-iso-butoxysilane, tert-butyltri-tert-butoxysilane, n-pentyltrimethoxysilane, n-pentyltriethoxysilane, n
-Pentyltri-iso-propoxysilane, n-pentyltri-n-butoxysilane, n-pentyltri-i
so-butoxysilane, n-pentyltri-tert
-Butoxysilane, n-hexyltrimethoxysilane,
n-hexyltriethoxysilane, n-hexyltri-
iso-propoxysilane, n-hexyltri-n-butoxysilane, n-hexyltri-iso-butoxysilane, n-hexyltri-tert-butoxysilane, n-heptyltrimethoxysilane, n-heptyltriethoxysilane, n-heptyltri- iso-propoxysilane, n-heptyltri-n-butoxysilane,
n-heptyltri-iso-butoxysilane, n-heptyltri-tert-butoxysilane, n-octyltrimethoxysilane, n-octyltriethoxysilane, n-octyltri-iso-propoxysilane, n
-Octyltri-n-butoxysilane, n-octyltri-iso-butoxysilane, n-octyltri-t
tert-butoxysilane, n-nonyltrimethoxysilane, n-nonyltriethoxysilane, n-nonyltri-
iso-propoxysilane, n-nonyltri-n-butoxysilane, n-nonyltri-iso-butoxysilane, n-nonyltri-tert-butoxysilane, n-
Decyltrimethoxysilane, n-decyltriethoxysilane, n-decyltri-iso-propoxysilane, n
-Decyltri-n-butoxysilane, n-decyltri-
iso-butoxysilane, n-decyltri-tert
-Butoxysilane, n-dodecyltrimethoxysilane,
n-dodecyltriethoxysilane, n-dodecyltri-
iso-propoxysilane, n-dodecyltri-n-butoxysilane, n-dodecyltri-iso-butoxysilane, n-dodecyltri-tert-butoxysilane, n-tetradecyltrimethoxysilane, n-tetradecyltriethoxysilane, n- Tetradecyltri-i
so-propoxysilane, n-tetradecyltri-n-
Butoxysilane, n-tetradecyltri-iso-butoxysilane, n-tetradecyltri-tert-butoxysilane, n-hexadecyltrimethoxysilane, n
-Hexadecyltriethoxysilane, n-hexadecyltri-iso-propoxysilane, n-hexadecyltri-n-butoxysilane, n-hexadecyltri-is
o-butoxy silane, n-hexadecyl tri-ter
t-butoxysilane, n-octadecyltrimethoxysilane, n-octadecyltriethoxysilane, n-octadecyltri-iso-propoxysilane, n-octadecyltri-n-butoxysilane, n-octadecyltri-iso-butoxysilane, n -Octadecyltri-tert-butoxysilane, cyclopentyltrimethoxysilane, cyclopentyltriethoxysilane, cyclopentyltri-iso-propoxysilane, cyclopentyltri-n-butoxysilane, cyclopentyltri-iso-butoxysilane, cyclopentyltri-t
ert-butoxysilane, cyclohexyltrimethoxysilane, cyclohexyltriethoxysilane, cyclohexyltri-iso-propoxysilane, cyclohexyltri-n-butoxysilane, cyclohexyltri-i
so-butoxy silane, cyclohexyl tri-ter
t-butoxysilane, dicyclohexyltrimethoxysilane, dicyclohexyltriethoxysilane, dicyclohexyltri-iso-propoxysilane, dicyclohexyltri-n-butoxysilane, dicyclohexyltri-iso-butoxysilane, dicyclohexyl-tert-butoxysilane, tricyclohexyltri Methoxysilane, tricyclohexyltriethoxysilane, tricyclohexyltri-iso-propoxysilane, tricyclohexyltri-n-butoxysilane, tricyclohexyltri-iso-butoxysilane, tricyclohexyltri-tert-butoxysilane;

Di-n-butyldimethoxysilane, di-n
-Butyldiethoxysilane, di-iso-butyldimethoxysilane, di-iso-butyldiethoxysilane, di-tert-butyldimethoxysilane, di-tert-
Butyldiethoxysilane, di-n-pentyldimethoxysilane, di-n-pentyldiethoxysilane, di-n-
Hexyldimethoxysilane, di-n-hexyldiethoxysilane, dicyclopentyldimethoxysilane, dicyclopentyldiethoxysilane, disilylhexyldimethoxysilane, disilylhexyldiethoxysilane, bis (dicyclohexyl) dimethoxysilane, bis (dicyclohexyl) diethoxy Silane, bis (tricyclohexyl) dimethoxysilane, bis (tricyclohexyl)
Diethoxysilane; and the like.

As the component (B), n-butyltrimethoxysilane, n-butyltriethoxysilane, iso-butyltrimethoxysilane, iso-butyltriethoxysilane, tert-butyltrimethoxysilane, ter
t-butyltriethoxysilane, n-pentyltrimethoxysilane, n-pentyltriethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, n-octyltrimethoxysilane, n-octyltriethoxysilane, n -Decyltrimethoxysilane, n-decyltriethoxysilane, n-dodecyltrimethoxysilane, n-dodecyltriethoxysilane, n
-Tetradecyltrimethoxysilane, n-tetradecyltriethoxysilane, n-hexadecyltrimethoxysilane, n-hexadecyltriethoxysilane, n-octadecyltrimethoxysilane, n-octadecyltriethoxysilane, cyclopentyltrimethoxysilane, Cyclopentyltriethoxysilane, cyclohexyltrimethoxysilane, cyclohexyltriethoxysilane,
Dicyclohexyltrimethoxysilane, dicyclohexyltriethoxysilane, tricyclohexyltrimethoxysilane, tricyclohexyltriethoxysilane, di-n-butyldimethoxysilane, di-n-butyldiethoxysilane, di-iso-butyldimethoxysilane, di-iso -Butyldiethoxysilane, di-tert-butyldimethoxysilane, di-tert-butyldiethoxysilane, di-n-pentyldimethoxysilane, di-n
-Pentyldiethoxysilane, di-n-hexyldimethoxysilane, di-n-hexyldiethoxysilane, dicyclopentyldimethoxysilane, dicyclopentyldiethoxysilane, disilylhexyldimethoxysilane, and disilylhexyldiethoxysilane are more preferred. Examples can be given. One or more of the above components (B) may be used simultaneously.

The catalyst used for hydrolyzing and / or condensing the components (A) and (B) includes metal chelate compounds, organic acids, inorganic acids, organic bases and inorganic bases. Examples of the metal chelate compound include triethoxy mono (acetylacetonate) titanium, tri-n-propoxy mono (acetylacetonate) titanium, tri-i-propoxy mono (acetylacetonate) titanium, and tri-n- Butoxy mono (acetylacetonate) titanium, tri-sec-butoxy mono (acetylacetonate) titanium, tri-t-butoxy mono (acetylacetonate) titanium, diethoxy.
Bis (acetylacetonato) titanium, di-n-propoxybis (acetylacetonato) titanium, di-i-
Propoxy bis (acetylacetonate) titanium, di-n-butoxybis (acetylacetonate) titanium, di-sec-butoxybis (acetylacetonato) titanium, di-t-butoxybis (acetylacetonate) Titanium, monoethoxy-tris (acetylacetonato) titanium, mono-n-propoxy-tris (acetylacetonato) titanium, mono-i-propoxy.
Tris (acetylacetonate) titanium, mono-n-butoxytris (acetylacetonate) titanium, mono-sec-butoxytris (acetylacetonate)
Titanium, mono-t-butoxy tris (acetylacetonate) titanium, tetrakis (acetylacetonate)
Titanium, triethoxy mono (ethyl acetoacetate) titanium, tri-n-propoxy mono (ethyl acetoacetate) titanium, tri-i-propoxy mono (ethyl acetoacetate) titanium, tri-n-butoxy mono (ethyl acetoacetate) Acetate) titanium, tri-s
ec-butoxy mono (ethyl acetoacetate) titanium, tri-t-butoxy mono (ethyl acetoacetate) titanium, diethoxy bis (ethyl acetoacetate) titanium, di-n-propoxy bis (ethyl acetoacetate) titanium, Di-i-propoxy bis (ethyl acetoacetate) titanium, di-n-butoxy bis (ethyl acetoacetate) titanium, di-sec-butoxy bis (ethyl acetoacetate) titanium, di-t
-Butoxy bis (ethyl acetoacetate) titanium,
Monoethoxy tris (ethyl acetoacetate) titanium, mono-n-propoxy tris (ethyl acetoacetate) titanium, mono-i-propoxy tris (ethyl acetoacetate) titanium, mono-n-butoxy tris (ethyl acetoacetate) ) Titanium, mono-sec
-Butoxy-tris (ethylacetoacetate) titanium, mono-t-butoxytris (ethylacetoacetate) titanium, tetrakis (ethylacetoacetate)
Titanium chelate compounds such as titanium, mono (acetylacetonate) tris (ethylacetoacetate) titanium, bis (acetylacetonate) bis (ethylacetoacetate) titanium, tris (acetylacetonate) mono (ethylacetoacetate) titanium;

Triethoxy mono (acetylacetonato) zirconium, tri-n-propoxy mono (acetylacetonato) zirconium, tri-i-propoxy mono (acetylacetonato) zirconium, tri-n-butoxy mono (acetyl) (Acetonato) zirconium, tri-sec-butoxy mono (acetylacetonato) zirconium, tri-t-butoxy mono (acetylacetonato) zirconium, diethoxy.
Bis (acetylacetonate) zirconium, di-n-
Propoxy bis (acetylacetonate) zirconium, di-i-propoxy bis (acetylacetonate) zirconium, di-n-butoxybis (acetylacetonate) zirconium, di-sec-butoxy.
Bis (acetylacetonate) zirconium, di-t-
Butoxy bis (acetylacetonate) zirconium, monoethoxy tris (acetylacetonate) zirconium, mono-n-propoxy tris (acetylacetonato) zirconium, mono-i-propoxy.
Tris (acetylacetonate) zirconium, mono-
n-butoxy tris (acetylacetonate) zirconium, mono-sec-butoxy tris (acetylacetonate) zirconium, mono-t-butoxy tris (acetylacetonate) zirconium, tetrakis (acetylacetonate) zirconium, triethoxy. Mono (ethyl acetoacetate) zirconium, tri-n-propoxy mono (ethyl acetoacetate) zirconium, tri-i-propoxy mono (ethyl acetoacetate) zirconium, tri-n-butoxy mono (ethyl acetoacetate) zirconium, Tri-s
ec-butoxy mono (ethyl acetoacetate) zirconium, tri-t-butoxy mono (ethyl acetoacetate) zirconium, diethoxy bis (ethyl acetoacetate) zirconium, di-n-propoxy.
Bis (ethylacetoacetate) zirconium, di-i
-Propoxy bis (ethyl acetoacetate) zirconium, di-n-butoxy bis (ethyl acetoacetate) zirconium, di-sec-butoxy bis (ethyl acetoacetate) zirconium, di-t-butoxy bis (ethyl acetoacetate) ) Zirconium, monoethoxy tris (ethyl acetoacetate) zirconium, mono-n-propoxy tris (ethyl acetoacetate) zirconium, mono-i-propoxy tris (ethyl acetoacetate) zirconium, mono-
n-butoxy tris (ethyl acetoacetate) zirconium, mono-sec-butoxy tris (ethyl acetoacetate) zirconium, mono-t-butoxy.
Tris (ethylacetoacetate) zirconium, tetrakis (ethylacetoacetate) zirconium, mono (acetylacetonate) tris (ethylacetoacetate) zirconium, bis (acetylacetonate) bis (ethylacetoacetate) zirconium, tris (acetylacetonate) Zirconium chelate compounds such as mono (ethylacetoacetate) zirconium;

Aluminum chelate compounds such as aluminum tris (acetylacetonate) and aluminum tris (ethylacetoacetate);

Examples of the organic acid include acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, maleic acid, methylmalonic acid, adipic acid and sebacin Acid, gallic acid, butyric acid, melitic acid, arachidonic acid, shikimic acid,
2-ethylhexanoic acid, oleic acid, stearic acid, linoleic acid, linoleic acid, salicylic acid, benzoic acid, p-
Aminobenzoic acid, p-toluenesulfonic acid, benzenesulfonic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoroacetic acid, formic acid, malonic acid, sulfonic acid, phthalic acid, fumaric acid, citric acid, tartaric acid, and the like. it can. Examples of the inorganic acid include hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, phosphoric acid and the like.

Examples of the organic base include pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, trimethylamine, triethylamine, monoethanolamine, diethanolamine, dimethylmonoethanolamine, monomethyldiethanolamine, triethanolamine, diazabicyclooctane, Examples thereof include diazabicyclononane, diazabicycloundecene, and tetramethylammonium hydroxide. Examples of the inorganic base include ammonia, sodium hydroxide, potassium hydroxide, barium hydroxide, calcium hydroxide and the like. Among these catalysts, metal chelate compounds, organic acids, and inorganic acids are preferred,
More preferred are a titanium chelate compound and an organic acid. These catalysts may be used alone or in combination of two or more.

The amount of the catalyst used is usually 0.1 to 100 parts by weight of the total of the components (A) and (B).
It is in the range of 001 to 20 parts by weight, preferably 0.01 to 15 parts by weight.

When the above components (A) and (B) are hydrolyzed and condensed, per mole of the group represented by -OR ^{2 in} component (A) and -OR ⁴ in component (B) ,
It is preferable to use 0.25 to 3 mol of water,
It is particularly preferred to add ~ 2.5 mol of water. When the amount of water to be added falls within the range of 0.25 to 3 mol, there is no possibility that the uniformity of the coating film is reduced, and the storage stability of the film-forming composition is less likely to be reduced. That's why.

Organic Solvent The organic solvent used in the present invention includes, for example, n-pentane, i-pentane, n-hexane, i-hexane and n
Aliphatic hydrocarbon solvents such as heptane, i-heptane, 2,2,4-trimethylpentane, n-octane, i-octane, cyclohexane and methylcyclohexane; benzene, toluene, xylene, ethylbenzene,
Trimethylbenzene, methylethylbenzene, n-propylbenzene, i-propylbenzene, diethylbenzene, i-butylbenzene, triethylbenzene, di-i
Aromatic hydrocarbon solvents such as -propylbenzene, n-amylnaphthalene and trimethylbenzene;

Methanol, ethanol, n-propanol, i-propanol, n-butanol, i-butanol, sec-butanol, t-butanol, n-pentanol, i-pentanol, 2-methylbutanol, s
ec-pentanol, t-pentanol, 3-methoxybutanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, s
ec-heptanol, heptanol-3, n-octanol, 2-ethylhexanol, sec-octanol, n-nonyl alcohol, 2,6-dimethylheptanol-4, n-decanol, sec-undecyl alcohol, trimethylnonyl alcohol, Mono-alcohol solvents such as sec-tetradecyl alcohol, sec-heptadecyl alcohol, phenol, cyclohexanol, methylcyclohexanol, 3,3,5-trimethylcyclohexanol, benzyl alcohol, phenylmethylcarbinol, diacetone alcohol, cresol ;

Ethylene glycol, 1,2-propylene glycol, 1,3-butylene glycol, pentanediol-2,4,2-methylpentanediol-2,
4, hexanediol-2,5, heptanediol-
Polyhydric alcohol solvents such as 2,4,2-ethylhexanediol-1,3, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, and glycerin;

Acetone, methyl ethyl ketone, methyl
n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-i-butyl ketone, methyl-n-
Pentyl ketone, ethyl-n-butyl ketone, methyl-
ketone solvents such as n-hexyl ketone, di-i-butyl ketone, trimethylnonanone, cyclohexanone, 2-hexanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, diacetone alcohol, acetophenone, fenchone;

Ethyl ether, i-propyl ether,
n-butyl ether, n-hexyl ether, 2-ethylhexyl ether, ethylene oxide, 1,2-propylene oxide, dioxolan, 4-methyldioxolan, dioxane, dimethyldioxane, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol diethyl ether , Ethylene glycol mono-n-butyl ether, ethylene glycol mono-n-hexyl ether, ethylene glycol monophenyl ether, ethylene glycol mono-2-ethyl butyl ether, ethylene glycol dibutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether , Diethylene glycol mono-n-butyl Ether, diethylene glycol di -n- butyl ether, diethylene glycol mono -n
-Hexyl ether, ethoxytriglycol, tetraethylene glycol di-n-butyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl Ether solvents such as ether, tripropylene glycol monomethyl ether, tetrahydrofuran, and 2-methyltetrahydrofuran;

Diethyl carbonate, methyl acetate, ethyl acetate, γ-butyrolactone, γ-valerolactone, n-propyl acetate, i-propyl acetate, n-butyl acetate;
I-butyl acetate, sec-butyl acetate, n-pentyl acetate, sec-pentyl acetate, 3-methoxybutyl acetate,
Methylpentyl acetate, 2-ethylbutyl acetate, 2-acetic acid
Ethylhexyl, benzyl acetate, cyclohexyl acetate,
Methyl cyclohexyl acetate, n-nonyl acetate, methyl acetoacetate, ethyl acetoacetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl acetate,
Diethylene glycol mono-n-butyl ether acetate,
Propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, glycol diacetate, methoxytriglycol acetate, Ethyl propionate, propionate n
-Butyl, i-amyl propionate, diethyl oxalate, di-n-butyl oxalate, methyl lactate, ethyl lactate, n-butyl lactate, n-amyl lactate, diethyl malonate, dimethyl phthalate, diethyl phthalate and the like Ester solvents;

Nitrogen-containing compounds such as N-methylformamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N-methylpropionamide and N-methylpyrrolidone System solvents; examples thereof include sulfur-containing solvents such as dimethyl sulfide, diethyl sulfide, thiophene, tetrahydrothiophene, dimethyl sulfoxide, sulfolane, and 1,3-propane sultone. These organic solvents can be used alone or in combination of two or more.

Specific examples of using the components (A) and (B), water and an organic solvent in the composition of the present invention include:
Water is intermittently or continuously added to an organic solvent in which the components (A) and (B) are dissolved. At this time, the catalyst may be added in advance to the organic solvent, or may be dissolved or dispersed in water at the time of adding water. The reaction temperature at this time is usually 0 to 100 ° C, preferably 15 to 80 ° C, and the reaction time is 15 minutes to 24 ° C.
Time, preferably 30 minutes to 12 hours.

In constituting the film-forming composition, the content of the alcohol having a boiling point of 100 ° C. or less in the composition is preferably 20% by weight or less, particularly preferably 5% by weight or less. The alcohol having a boiling point of 100 ° C. or less can be obtained from the above (A)
It may occur during hydrolysis and / or condensation of the compound represented by the component and the component (B), and is removed by distillation or the like so that the content is 20% by weight or less, preferably 5% by weight or less. Is preferred.

(A) in the film-forming composition of the present invention
The use ratio of the component (B) to the component (B) (complete hydrolysis hydrolysis condensate) is 100 parts by weight, and the component (B) (complete hydrolysis hydrolysis condensate) is 40 to 200 parts by weight. Preferably it is 45 to 180 parts by weight. If the content of the component (B) is less than 40 parts by weight, it is difficult to achieve a very low dielectric constant, while if it exceeds 200 parts by weight, the mechanical strength of the coating film is reduced.

The following components may be further added to the film forming composition of the present invention.

Β-diketone β-diketone includes acetylacetone, 2,4-hexanedione, 2,4-heptanedione, 3,5-heptanedione, 2,4-octanedione, 3,5-octanedione, , 4-Nonandione, 3,5-nonandione, 5-methyl-2,4-hexanedione, 2,2
6,6-tetramethyl-3,5-heptanedione, 1,
One or more kinds such as 1,1,5,5,5-hexafluoro-2,4-heptanedione. In the present invention, the content of β-diketone in the film forming composition is preferably 1 to 50% by weight, more preferably 3 to 30% by weight of the total solvent. If the β-diketone is added in such a range, a certain storage stability can be obtained, and characteristics such as uniformity of the coating film of the film-forming composition are less likely to deteriorate.

Other Additives Components such as colloidal silica, colloidal alumina, organic polymer, and surfactant may be further added to the film-forming composition obtained in the present invention. Colloidal silica is, for example, a dispersion in which high-purity silicic anhydride is dispersed in the hydrophilic organic solvent, and usually has an average particle size of 5 to 30 m.
μ, preferably 10-20 μm, solid content concentration of 10-4
It is about 0% by weight. Examples of such colloidal silica include methanol silica sol and isopropanol silica sol manufactured by Nissan Chemical Industry Co., Ltd .; Oscar manufactured by Catalyst Chemical Industry Co., Ltd. Examples of the colloidal alumina include alumina sols 520, 100, and 200 manufactured by Nissan Chemical Industries, Ltd .; alumina clear sols and alumina sols 1 manufactured by Kawaken Fine Chemicals Co., Ltd.
0 and 132.

Examples of the organic polymer include a compound having a polyalkylene oxide structure, a compound having a sugar chain structure, a vinylamide polymer, a (meth) acrylate compound, an aromatic vinyl compound, a dendrimer, a polyimide, a polyamic acid, and a polyarylene. ,polyamide,
Examples thereof include polyquinoxaline, polyoxadiazole, and a fluoropolymer. As a surfactant,
For example, nonionic surfactants, anionic surfactants, cationic surfactants, amphoteric surfactants, and the like, and further, silicone surfactants, polyalkylene oxide surfactants, and fluorine-containing surfactants Agents and the like.

In the film-forming composition obtained by the present invention, the sodium content in the composition is preferably set to a value within 20 ppb. By limiting the sodium content to such a range, there is no danger that the reliability of an electric circuit or the like will be reduced even when it is used for an interlayer insulating film material such as a semiconductor. Further, it is possible to form an interlayer insulating film having a uniform thickness while preventing the occurrence of corrosion more efficiently.

Method for Preparing Film-Forming Composition In preparing the film-forming composition of the present invention, the components (A) and (B) are mixed in an organic solvent as described above.
The components (A) and (B) may be hydrolyzed and condensed in the presence of a catalyst and water, and are not particularly limited. However, when the above-mentioned metal chelate compound and β-diketones are used, a method of preparing the composition and then finally adding β-diketone is adopted.

Specific examples of the method for preparing the composition of the present invention include the following methods. A method in which a predetermined amount of water and a catalyst are added to a mixture comprising the components (A) and (B) and a required amount of an organic solvent to carry out a hydrolysis / condensation reaction. A method in which a predetermined amount of water and a catalyst are added to a mixture comprising the components (A) and (B) and a required amount of an organic solvent to perform a hydrolysis / condensation reaction, and then an alcohol component produced by the reaction is removed under reduced pressure.

A method comprising adding a predetermined amount of water and a catalyst to a mixture comprising the components (A) and (B) and a required amount of an organic solvent to carry out a hydrolysis / condensation reaction, and then adding a β-diketone. After a predetermined amount of water and a catalyst are added to a mixture comprising the components (A) and (B) and a required amount of an organic solvent to carry out a hydrolysis / condensation reaction, an alcohol component produced by the reaction is removed under reduced pressure. A method of adding β-diketone.

A predetermined amount of water and a catalyst are added to a mixture comprising the components (A) and (B) and a required amount of an organic solvent to carry out a hydrolysis / condensation reaction, and then β-diketone is added. A method of removing the alcohol component generated by the above under reduced pressure.

The total solid content of the composition of the present invention thus obtained is preferably 2 to 30% by weight.
It is appropriately adjusted according to the purpose of use. When the total solid content of the composition is 2 to 30% by weight, the thickness of the coating film is in an appropriate range, and the storage stability is more excellent. here,
The solid content concentration can be easily adjusted by the amount of the organic solvent used. The weight-average molecular weight of the hydrolyzed condensate of the components (A) and (B) in the composition thus obtained is usually 1,000 to 120,000, preferably 1,200 to 100,000. It is about.

When the composition of the present invention thus obtained is applied to a substrate such as a silicon wafer, SiO ₂ wafer, SiN wafer, etc., a spin coating method, a dipping method,
A coating means such as a roll coating method and a spray method is used.

In this case, the film thickness may be about 0.05 to 1.5 μm in a single coating, and about 0.1 to 3 μm in a double coating. it can. Thereafter, the coating film can be formed by drying at normal temperature, or by heating and drying at a temperature of about 80 to 600 ° C., usually for about 5 to 240 minutes. As a heating method at this time, a hot plate, an oven, a furnace, or the like can be used, and as a heating atmosphere, the heating is performed in the atmosphere, a nitrogen atmosphere, an argon atmosphere, a vacuum, a reduced pressure with controlled oxygen concentration, or the like. Can be.

Further, the mechanical strength of the coating film can be further improved by applying an electron beam or an ultraviolet ray after applying the coating film to the substrate or after heating the coated substrate.

Further, it is also possible to improve the water absorption of the coating film by subjecting the coating film-formed substrate after the heating to a silylation treatment on the coating film. As the silylation agent, for example,
Allyloxytrimethylsilane, N, O-bis (trimethylsilyl) acetamide, bis (trimethylsilyl) trifluoroacetamide, bis (trimethylsilyl) urea, trimethylchlorosilane, N- (trimethylsilyl) acetamide, trimethylsilyl azide, trimethylsilyl cyananide, N- (trimethylsilyl) ) Imidazole, 3-trimethylsilyl-2-oxazolidinone, trimethylsilyltrifluoromethanesulfonate, hexamethyldisilazane, heptamethyldisilazane, hexamethyldisiloxane, N-methyl-N-trimethylsilyltrifluoroacetamide, (N, N-dimethyl Amino) trimethylsilane, nonamethyltrisilazane, 1,1,3,3-tetramethyldisilazane, trimethyliodosilane, etc. It can be mentioned. The silylation of the coating film can be performed by dip coating or spin coating on the coating film directly or after diluting the above silylating agent with a solvent, or by exposing the coating film to a vapor atmosphere of the silylating agent. Furthermore, you may heat a coating film to 50-400 degreeC after a silylation process.

The film (material for an interlayer insulating film) thus obtained is excellent in insulating properties and excellent in uniformity of the coating film, dielectric constant, crack resistance of the coating film and surface hardness of the coating film. LSI, system LSI, DRAM, SDRAM,
It is useful for applications such as interlayer insulating films for semiconductor devices such as RDRAMs and D-RDRAMs, protective films such as surface coating films for semiconductor devices, interlayer insulating films for multilayer wiring boards, protective films for LCD devices, and insulation preventing films. is there.

[0053]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below based on examples. However, the following description generally shows an embodiment of the present invention, and the present invention is not limited by the description. The composition for film formation was evaluated as follows.

The composition for forming a uniform film thickness was coated on an 8-inch silicon wafer by using a spin coater under the conditions of a rotation speed of 1,800 rpm and 20 seconds. Then, on a hot plate 80
The substrate was dried at 200 ° C. for 5 minutes and at 200 ° C. for 5 minutes.
The substrate was baked in a vacuum oven at 60 ° C. and 0.1 Torr for 60 minutes. The film thickness of the coating film thus obtained is
Optical film thickness meter (Rudolph Technology)
Measurement was performed at 50 points in the coating film surface using Spectra Laser 200 (manufactured by es Co., Ltd.). 3σ of the obtained film thickness was calculated and evaluated according to the following criteria. ：: 3σ of coating film is less than 100 nm ×: 3σ of coating film is 100 nm or more

[0055] crack resistance 8-inch silicon on the wafer is coated with a composition sample by spin coating, for 5 minutes at 80 ° C. on a hot plate, and dried for 5 minutes the substrate at 200 ° C., further 460 ° C.,
The substrate was baked in a 0.1 Torr vacuum oven for 60 minutes. The appearance of the obtained coating film was observed with a 350,000 lux surface observation lamp, and evaluated according to the following criteria. The maximum film thickness without crack generation was defined as the crack limit film thickness. ：: No crack is observed on the coating film surface. ×: Crack is observed on the coating film surface.

A composition sample was coated on a silicon wafer having a dielectric constant of 8 inches by a spin coating method, and the substrate was dried on a hot plate at 80 ° C. for 5 minutes and at 200 ° C. for 5 minutes.
The substrate was baked in a 0.1 Torr vacuum oven for 60 minutes. Aluminum was vapor-deposited on the obtained substrate to produce a substrate for permittivity evaluation. Dielectric constant was measured by using Yokogawa-Hewlett-Packard Co., Ltd., HP16451B electrode and HP4
100k using 284A Precision LCR meter
It calculated from the capacitance value in Hz.

[0057] the elastic of 8-inch silicon wafer, and applying the composition sample by spin coating, for 5 minutes at 80 ° C. on a hot plate, and dried for 5 minutes the substrate at 200 ° C., further 460 ° C.,
The substrate was baked in a 0.1 Torr vacuum oven for 60 minutes. The obtained film was measured by a continuous stiffness measuring method using a nano indenter XP (manufactured by Nano Instruments).

Synthesis Example 1 In a quartz separable flask, 203.6 g of methyltrimethoxysilane and 109.2 g of iso-butyltrimethoxysilane were dissolved in 353 g of propylene glycol monomethyl ether, and the mixture was stirred with a three-one motor to obtain a solution. The temperature was stabilized at 50 ° C. Next, 125 g of ion-exchanged water in which 8.8 g of malonic acid was dissolved was added to the solution over 1 hour. Then, after reacting at 50 ° C. for 2 hours, the reaction solution was cooled to room temperature. In this reaction solution,
405 g of propylene glycol monomethyl ether was added, a solution containing methanol and water was removed from the reaction solution at 50 ° C. by evaporation of 405 g, and the reaction solution (A-
1) was obtained.

Synthesis Example 2 In a quartz separable flask, 203.6 g of methyltrimethoxysilane and 101.1 g of cyclohexyltrimethoxysilane were dissolved in 368 g of propylene glycol monopropyl ether, and the mixture was stirred with a three-one motor. Was stabilized at 50 ° C. Next, 118 g of ion-exchanged water in which 8.8 g of malonic acid was dissolved was added to the solution over 1 hour. Then, after reacting at 50 ° C. for 2 hours, the reaction solution was cooled to room temperature. To this reaction solution, 38 g of propylene glycol monopropyl ether was added.
2 g was added, and a solution containing methanol and water was removed from the reaction solution at 50 ° C. by 382 g of evaporation to obtain a reaction solution (A-2).

Synthesis Example 3 In a quartz separable flask, 135.7 g of methyltrimethoxysilane and 151.6 g of cyclohexyltrimethoxysilane were dissolved in 401 g of propylene glycol monomethyl ether acetate, and the mixture was stirred with a three-one motor to obtain a solution temperature. Was stabilized at 50 ° C. Next, ion-exchanged water 103 in which 8.8 g of malonic acid was dissolved
g was added to the solution over 1 hour. Then, at 50 ° C, 2
After reacting for an hour, the reaction solution was cooled to room temperature. To this reaction solution was added 334 g of propylene glycol monomethyl ether acetate, and at 50 ° C., 334 g of a solution containing methanol and water was removed from the reaction solution by evaporation to obtain a reaction solution (A-3).

Synthesis Example 4 In a quartz separable flask, 135.7 g of methyltrimethoxysilane, 151.6 g of cyclohexyltrimethoxysilane, and 1.1 g of diisopropoxytitanium bisethylacetyl acetate were dissolved in 401 g of propylene glycol monomethyl ether acetate. Thereafter, the solution was stirred by a three-one motor, and the solution temperature was stabilized at 50 ° C. Next, 103 g of ion-exchanged water was added to the solution over 1 hour. Then, after reacting at 50 ° C. for 2 hours, the reaction solution was cooled to room temperature. To this reaction solution, 334 g of propylene glycol monomethyl ether acetate was added, and at 50 ° C., 334 g of a solution containing methanol and water was removed from the reaction solution by evaporation, and the reaction solution (A-
4) was obtained.

Synthesis Example 5 In a quartz separable flask, only 339.3 g of methyltrimethoxysilane was dissolved in 304 g of propylene glycol monomethyl ether, followed by stirring with a three-one motor to stabilize the solution temperature at 50 ° C. Next, ion-exchanged water 14 in which 8.8 g of maleic acid was dissolved was used.
8 g was added to the solution over 1 hour. Then, after reacting at 50 ° C. for 2 hours, the reaction solution was cooled to room temperature. To this reaction solution, 479 g of propylene glycol monomethyl ether was added, and at 50 ° C., 479 g of a solution containing methanol and water was removed from the reaction solution by evaporation to obtain a reaction solution (B-1).

Synthesis Example 6 In a quartz separable flask, 169.7 g of methyltrimethoxysilane and 211.8 g of tetramethoxysilane
Was dissolved in 225 g of propylene glycol monomethyl ether, and stirred with a three-one motor to stabilize the solution temperature at 50 ° C. Next, 8.8 g of maleic acid
Was dissolved in 184 g of ion-exchanged water over 1 hour. Then, after reacting at 50 ° C for 2 hours,
The reaction was cooled to room temperature. 596 g of propylene glycol monomethyl ether was added to the reaction solution,
596 g of a solution containing methanol and water from the reaction solution with
It was removed by evaporation to obtain a reaction solution (B-2).

Example 1 The reaction solution (A-1) obtained in Synthesis Example 1 was filtered through a polytetrafluoroethylene filter having a pore size of 0.2 μm, and applied to a silicon wafer by spin coating.
The thickness of the obtained coating film was 580 nm, and 3σ
Was as good as 60 nm. The maximum film thickness without cracks was evaluated by changing the film thickness of the coating film.
and excellent crack resistance. Further, the dielectric constant of the coating film was measured and found to be a very low value of 2.43. Furthermore, when the elastic modulus of the coating film was evaluated, it was 3.9 G
It showed a high value of Pa.

Example 2 In Example 1, the substrate was baked for 60 minutes in a vacuum oven at 460 ° C. and 0.1 Torr for 60 minutes, and then the substrate was placed in an ethylene glycol dimethyl ether solution containing 5% by weight of hexamethyldisilazane. After soaking for 10 minutes,
Heated in a vacuum oven at 300 ° C. for 1 hour. The thickness of the obtained coating film was 570 nm, and 3σ was 80 nm.
And was good. When the film thickness of the coating film was changed to evaluate the maximum film thickness at which cracks did not occur, the film showed excellent crack resistance of 1,450 nm. Further, the dielectric constant of the coating film was measured, and was a very low value of 2.20. further,
When the elastic modulus of the coating film was evaluated, it showed a high value of 3.8 GPa.

Examples 3 to 5 Reaction solutions (A-2) and (A-3) obtained in Synthesis Examples 2 to 4
Example 1 except that (A-4) and (A-4) were used, respectively.
The coating film was evaluated in the same manner as described above. Table 1 shows the evaluation results.

Comparative Example 1 A coating film was evaluated in the same manner as in Example 1 except that the reaction solution (B-1) obtained in Synthesis Example 5 was used. Although the film thickness of the coating film was 500 nm, 3σ was 77 nm, and the dielectric constant was a relatively small value of 2.64, the crack limit film thickness of the obtained coating film was inferior to 820 nm, and the elastic modulus was 2.5 GPa. Was a low value.

Comparative Example 2 A coating film was evaluated in the same manner as in Example 1 except that the reaction solution (B-2) obtained in Synthesis Example 6 was used. Although the elastic modulus of the coating film was as high as 3.5 GPa,
The thickness of the coating film is 570 nm, 3σ is 160 nm, the dielectric constant is 3.11, and the crack limit thickness of the obtained coating film is 990 n.
m was inferior.

[0069]

[Table 1]

[0070]

According to the present invention, by combining a specific two kinds of alkoxysilanes to contain a hydrolyzed condensate which is hydrolyzed and condensed, uniformity of thickness in a coating film, crack resistance, It is possible to provide a film-forming composition (material for an interlayer insulating film) having a very small balance between dielectric constant and elasticity characteristics.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tomotaka Shinoda 2--11-24 Tsukiji, Chuo-ku, Tokyo Inside JSR Co., Ltd. F term in reference (reference) 4J035 AA03 BA06 BA16 CA01N CA062 CA112 CA142 CA162 CA192 LA03 LB20 4J038 DL051 DL052 NA21 PB09 5F058 AA02 AA03 AA10 AC03 AC04 AF04 AF10 AG01 AG09 AG10 AH02 AH03

Claims (3)

[Claims] (A) a compound represented by the following general formula (1) and (R ¹ ) _a Si (OR ² ) _4-a ... (1) (R ¹ is a methyl group or an ethyl group , A vinyl group, a phenyl group, a monovalent organic group, R ² represents a monovalent organic group, and a is an integer of 0 to 2.) (B) Table represented by the following general formula (2) (R ³ ) _b Si (OR ⁴ ) _4-b (2) (R ³ represents a linear alkyl group having 4 or more carbon atoms, a branched alkyl group, or an aliphatic cyclic alkyl group; R ⁴ represents a monovalent organic group, and b is an integer of 1 to 2.). 2. Component (A) (in terms of complete hydrolysis condensate)
The film-forming composition according to claim 1, wherein the component (B) (in terms of a complete hydrolysis condensate) is 40 to 200 parts by weight based on 100 parts by weight. 3. An insulating film forming material comprising the film forming composition according to claim 1.