JP2000327476A5 - - Google Patents
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- JP2000327476A5 JP2000327476A5 JP1999143889A JP14388999A JP2000327476A5 JP 2000327476 A5 JP2000327476 A5 JP 2000327476A5 JP 1999143889 A JP1999143889 A JP 1999143889A JP 14388999 A JP14388999 A JP 14388999A JP 2000327476 A5 JP2000327476 A5 JP 2000327476A5
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- JP
- Japan
- Prior art keywords
- single crystal
- cooling
- semiconductor single
- rod
- crystal rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001816 cooling Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 239000012530 fluid Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 102100016709 COIL Human genes 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 108010051876 p80-coilin Proteins 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項１】 加熱コイルにより多結晶棒を溶融し、その溶融部の下方で凝固させて単結晶棒を成長させるフローティングゾーン法の半導体単結晶製造装置において、
単結晶棒の成長域を囲繞する冷却手段を設けたことを特徴とする半導体単結晶製造装置。
【請求項２】 請求項１記載の半導体単結晶製造装置において、
冷却手段は、単結晶棒の成長域を囲繞し、冷却流体を流す配管が付設された冷却板からなることを特徴とする半導体単結晶製造装置。
【請求項３】 請求項１あるいは請求項２記載の半導体単結晶製造装置において、冷却手段は、その上端が溶融部と単結晶棒の界面域以下に配置されていることを特徴とする半導体単結晶製造装置。
【請求項４】 請求項２又は３記載の半導体単結晶製造装置において、前記冷却流体を単結晶棒の界面域側から導入し、順次下方に流すように配管してなることを特徴とする半導体単結晶製造装置。
【請求項５】 請求項２又は３記載の半導体単結晶製造装置において、前記冷却流体の少なくとも入口側配管が前記加熱コイルの給電部の下側に配置されていることを特徴とする半導体単結晶製造装置。
【請求項６】 加熱コイルにより多結晶棒を溶融し、その溶融部の下方で凝固させて単結晶棒を成長させるフローティングゾーン法の半導体単結晶製造方法において、
単結晶棒成長域の周囲を強制的に冷却することにより熱放射量を制御して、溶融部表面の温度勾配を制御して単結晶棒を成長させることを特徴とする半導体単結晶製造方法。
【請求項７】 単結晶棒成長域の周囲を強制的に冷却するとともに誘導加熱コイルへの入力電力量を増加させて溶融部表面の温度勾配を大きくし、溶融部内の対流を活性化することを特徴とする請求項６記載の半導体単結晶製造方法。
【請求項８】 単結晶棒の回転速度を制御することにより単結晶面内の微小領域での抵抗変動を制御することを特徴とする請求項６記載の半導体単結晶製造方法。
【請求項９】 冷却流体を単結晶棒の界面側から周回させながら下方に順次流すようにしてなることを特徴とする請求項６記載の半導体単結晶製造方法。
【請求項１０】 前記加熱コイルによる単結晶棒周方向の加熱温度分布における高温領域の下部にて冷却流体を導入するようにしてなることを特徴とする請求項６記載の半導体単結晶製造方法。
【請求項１１】 冷却流体の導入温度を調節して単結晶棒の温度勾配を制御することを特徴とする請求項６記載の半導体単結晶製造方法。
[Claims]
(1) Heating coilIn the semiconductor single crystal manufacturing apparatus of the floating zone method in which the polycrystalline rod is melted and solidified below the melted portion to grow the single crystal rod,
An apparatus for producing a semiconductor single crystal, comprising cooling means surrounding a growth area of a single crystal rod.
2. The semiconductor single crystal manufacturing apparatus according to claim 1,
The apparatus for manufacturing a semiconductor single crystal, wherein the cooling means comprises a cooling plate surrounding a growth area of the single crystal rod and having a pipe for flowing a cooling fluid.
3. The semiconductor single crystal manufacturing apparatus according to claim 1, wherein the cooling means has an upper end located below an interface area between the molten portion and the single crystal rod. Crystal manufacturing equipment.
(4) 4. The semiconductor single crystal manufacturing apparatus according to claim 2, wherein the cooling fluid is introduced from the interface region side of the single crystal rod and is piped so as to flow sequentially downward.
(5) 4. The semiconductor single crystal manufacturing apparatus according to claim 2, wherein at least an inlet pipe of the cooling fluid is arranged below a power supply portion of the heating coil.
6. Heating coilIn the semiconductor single crystal manufacturing method of the floating zone method to melt the polycrystalline rod and solidify below the molten portion to grow the single crystal rod,
Single crystal rodGrowth areaA method for producing a semiconductor single crystal, characterized in that the amount of heat radiation is controlled by forcibly cooling the periphery to control the temperature gradient on the surface of the molten portion to grow a single crystal rod.
7. Single crystal rodGrowth areaIt is characterized by forcibly cooling the surroundings and increasing the amount of electric power input to the induction heating coil to increase the temperature gradient on the fusion zone surface and activate convection in the fusion zone.Claim 6The method for producing a semiconductor single crystal according to the above.
8. The method according to claim 1, wherein a change in resistance in a minute area within a single crystal plane is controlled by controlling a rotation speed of the single crystal rod.Claim 6The method for producing a semiconductor single crystal according to the above.
9. 7. The method for producing a semiconductor single crystal according to claim 6, wherein the cooling fluid is caused to flow sequentially downward while rotating around the interface side of the single crystal rod.
10. 7. The method for producing a semiconductor single crystal according to claim 6, wherein a cooling fluid is introduced into a lower portion of a high temperature region in a heating temperature distribution in a circumferential direction of the single crystal rod by the heating coil.
11. 7. The method for producing a semiconductor single crystal according to claim 6, wherein a temperature gradient of the single crystal rod is controlled by adjusting an introduction temperature of the cooling fluid.
図７は、他の実施例の冷却手段２１を示す平面図である。
図７において、冷却手段２１がコイル３５と同芯軸上で、コイル３５から一定間隔離間した下側の位置に配設されている。冷却手段２１は、凝固した単結晶棒４３ＡをスキマＴａを介して内部に収容する熱放射率の高い材質よりなる冷却板５と、冷却板５の外周の半分にそれぞれ当接されて巻回付設され、冷却板５を保持する熱伝達率の高い第１配管２３と第２配管２５とから構成されている。冷却板５は、その外周に付設された第１配管２３と第２配管２５により挟持されて保持されている。第１配管２３および第２配管２５は、それぞれ冷却板５の外周に沿って上下方向に複数個配設されている。
FIG. 7 is a plan view showing a cooling unit 21 according to another embodiment.
In FIG. 7, the cooling means 21 is disposed on a concentric axis with the coil 35 at a lower position separated from the coil 35 by a fixed distance. The cooling means 21 is provided with a cooling plate 5 made of a material having a high thermal emissivity for accommodating the solidified single crystal rod 43A therein through a gap Ta, and is wound in contact with a half of the outer periphery of the cooling plate 5 respectively. The first and second pipes 23 and 25 which hold the cooling plate 5 and have a high heat transfer coefficient are configured. The cooling plate 5 is sandwiched and held by a first pipe 23 and a second pipe 25 attached to the outer periphery thereof. A plurality of the first pipes 23 and the second pipes 25 are respectively provided in the vertical direction along the outer periphery of the cooling plate 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14388999A JP4521621B2 (en) | 1999-05-24 | 1999-05-24 | Semiconductor single crystal manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14388999A JP4521621B2 (en) | 1999-05-24 | 1999-05-24 | Semiconductor single crystal manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000327476A JP2000327476A (en) | 2000-11-28 |
| JP2000327476A5 true JP2000327476A5 (en) | 2006-06-01 |
| JP4521621B2 JP4521621B2 (en) | 2010-08-11 |
Family
ID=15349403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14388999A Expired - Lifetime JP4521621B2 (en) | 1999-05-24 | 1999-05-24 | Semiconductor single crystal manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4521621B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104264220A (en) * | 2014-07-02 | 2015-01-07 | 洛阳金诺机械工程有限公司 | Direct silicon core drawing method using product material |
| JP6863240B2 (en) * | 2017-11-13 | 2021-04-21 | 株式会社Sumco | Silicon single crystal manufacturing equipment and manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1644002A1 (en) * | 1967-04-15 | 1970-04-09 | Siemens Ag | Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
| DE2227750C3 (en) * | 1972-06-07 | 1980-08-28 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Device for crucible-free zone melting of a rod-shaped body made of crystalline material, in particular made of semiconductor material |
| DE2438852C3 (en) * | 1974-08-13 | 1980-02-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of homogeneously doped semiconductor single crystal rods |
| JP2845086B2 (en) * | 1993-04-07 | 1999-01-13 | 信越半導体株式会社 | Semiconductor single crystal growth equipment |
| JPH0940492A (en) * | 1995-07-27 | 1997-02-10 | Hitachi Cable Ltd | Production of single crystal and apparatus for production therefor |
-
1999
- 1999-05-24 JP JP14388999A patent/JP4521621B2/en not_active Expired - Lifetime
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