JP2000327418A - Piezoelectric porcelain composition - Google Patents

Piezoelectric porcelain composition

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Publication number
JP2000327418A
JP2000327418A JP11133528A JP13352899A JP2000327418A JP 2000327418 A JP2000327418 A JP 2000327418A JP 11133528 A JP11133528 A JP 11133528A JP 13352899 A JP13352899 A JP 13352899A JP 2000327418 A JP2000327418 A JP 2000327418A
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JP
Japan
Prior art keywords
piezoelectric
strain constant
weight
actuator
piezoelectric strain
Prior art date
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Application number
JP11133528A
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Japanese (ja)
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JP3761355B2 (en
Inventor
Masashi Sasaki
誠志 佐々木
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TDK Corp
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TDK Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric porcelain composition capable of obtaining an element having >200×1012 m/v piezoelectric strain constant (d31) of mode of vibration due to elongation in the major side direction and a sufficiently high Curie temperature, less liable to the deterioration of displacement as an actuator and having high grain boundary strength. SOLUTION: At least one selected form W, Sb, Nb and Ta is added as a subsidiary component to Pbx[(CO1/3Nb2/3)aTiBZr1-a-b]O3 (where 0.98<=x<=0.999, 0.01<=a<=0.03 and 0.43<=b<=0.49) as a principal component by 0.1-1.2 wt.% (expressed in terms of WO3, Sb2O3, Nb2O5 and Ta2O5) based on 1 mol principal component and Si is further added as a subsidiary component by 0.01-0.1 wt.% (expressed in terms of SiO2).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、チタン酸ジルコン
酸鉛を主成分とする圧電磁器組成物に係り、特に高い圧
電歪定数を持ち、耐久性、粒界強度が優れた圧電アクチ
ュエータを構成するのに好適な圧電磁器組成物に関する
ものである。
The present invention relates to a piezoelectric ceramic composition containing lead zirconate titanate as a main component, and particularly to a piezoelectric actuator having a high piezoelectric strain constant, excellent durability, and excellent grain boundary strength. The present invention relates to a piezoelectric ceramic composition suitable for

【0002】[0002]

【従来の技術】従来より、この種の用途に用いられる圧
電磁器組成物としては、PbTiO3 −PbZrO3
の組成物が知られている。例えばPbTiO 3 −PbZ
rO3 系材料にSb2 5 、Nb2 5 、WO3 など
を添加したもの、PbTiO3 −PbZrO3 系材料の
Pbの一部をBa、Sr、Ca、Laで置換したもの
や、第三成分としてPb(Ni1/3 Nb2/3 )O3 、P
b(Mg 1/3 Nb2/3 )O3 などの複合ペロブスカイト
化合物を固溶させたものが知られている。
2. Description of the Related Art Conventionally, the pressure used for this kind of application has been
As the porcelain composition, PbTiOThree-PbZrOThreesystem
Are known. For example, PbTiO Three-PbZ
rOThreeSb for system materialTwoOFive , NbTwoOFive, WOThreeSuch
, PbTiOThree-PbZrOThreeSystem material
Pb partially substituted with Ba, Sr, Ca, La
And Pb (Ni1/3Nb2/3) OThree, P
b (Mg 1/3Nb2/3) OThreeCompound perovskite
A solid solution of a compound is known.

【0003】[0003]

【発明が解決しようとする課題】例えば、圧電アクチュ
エータ用(以下単にアクチュエータと称する)に圧電磁
器組成物を用いる場合には、特性として高い圧電歪定数
(例えば、長辺方向伸び振動モードの圧電歪定数(d3
1)が200×10-12 m/v以上)を持ち、機械的品
質係数(Qm)が低い(例えば100以下)ことが要求
される。
For example, when a piezoelectric ceramic composition is used for a piezoelectric actuator (hereinafter simply referred to as an actuator), the piezoelectric ceramic composition has a high piezoelectric strain constant (for example, a piezoelectric strain in a long-side stretching vibration mode). Constant (d3
1) is 200 × 10 −12 m / v or more) and the mechanical quality factor (Qm) is low (for example, 100 or less).

【0004】一般に高い圧電歪定数を持つ磁器組成物は
キュリー温度(Tc)が低く(Tc<230℃)なると
いう特徴がある。例えば従来より知られている長辺方向
伸び振動モードの圧電歪定数(d31)が200×10
-12 m/vを超えるような圧電磁器組成物はキュリー温
度が200℃前後になり、150℃〜200℃に達する
ような環境では圧電特性が急激に低下し実用できないと
いうことがあった。また圧電歪定数(d31)が高く、
機械的品質係数(Qm)が低く、キュリー温度が比較的
高い圧電磁器組成物も知られているが、これらをアクチ
ュエータとして150℃前後の温度で使用した場合変位
劣化が大きいという問題があった。
In general, a porcelain composition having a high piezoelectric strain constant is characterized by a low Curie temperature (Tc) (Tc <230 ° C.). For example, a conventionally known piezoelectric strain constant (d31) in the long-side direction elongation vibration mode is 200 × 10
When the piezoelectric ceramic composition exceeds −12 m / v, the Curie temperature becomes about 200 ° C., and in an environment where the temperature reaches 150 ° C. to 200 ° C., the piezoelectric characteristics are rapidly lowered, so that it may not be practical. Also, the piezoelectric distortion constant (d31) is high,
Piezoelectric ceramic compositions having a low mechanical quality factor (Qm) and a relatively high Curie temperature are also known. However, when these are used as actuators at a temperature of about 150 ° C., there is a problem that displacement deterioration is large.

【0005】また、従来より知られている圧電歪定数が
高い(d31≧200×10-12 m/v)圧電磁器組成
物を積層型のアクチュエータ用に用いる場合、粒子径が
大きく、層間が薄い(例えば10μm以下)積層体を構
成することが困難であるという問題があった。さらに粒
界強度が弱く、アクチュエータの加工時に割れ・カケ不
良が発生し易く、アクチュエータ駆動時にもクラックが
入り易いという問題があった。
In addition, when a conventionally known piezoelectric ceramic composition having a high piezoelectric strain constant (d31 ≧ 200 × 10 −12 m / v) is used for a laminated actuator, the particle size is large and the interlayer is thin. There is a problem that it is difficult to form a laminate (for example, 10 μm or less). Further, there is a problem that the grain boundary strength is weak, cracks and chipping defects are apt to occur during processing of the actuator, and cracks are liable to occur when the actuator is driven.

【0006】したがって本発明では、これらの問題を解
決すべく、長辺方向伸び振動モードの圧電歪定数(d3
1)が200×10-12 m/vを超え、キュリー温度が
十分に高く、アクチュエータとしての変位の劣化が少な
く、さらに粒界強度が強い素子が得られる圧電磁器組成
物を提供することを目的とするものである。
Accordingly, in the present invention, in order to solve these problems, the piezoelectric strain constant (d3
1) exceeds 200 × 10 −12 m / v, the Curie temperature is sufficiently high, the degradation of displacement as an actuator is small, and an object is to provide a piezoelectric ceramic composition capable of obtaining an element having high grain boundary strength. It is assumed that.

【0007】[0007]

【課題を解決するための手段】前記目的を達成するた
め、本発明では、Pbx〔(Co1/3 Nb2/3 )a T
ib Zr1−a−b〕O3 (但し、0.98≦x≦
0.999、0.01≦a≦0.03、0.43≦b≦
0.49)を主成分とし、主成分1モルの重量に対し、
副成分としてW、Sb、Nb、Taのうち少なくとも一
種をWO3 、Sb2 3 、Nb2 5 、Ta2 5 に換
算して0.1〜1.2重量%添加し、さらに副成分とし
てSiをSiO2 に換算して0.01〜0.1重量%添
加した圧電磁器組成物及び、Pbx〔(Co1/3 Nb
2/3 )a Tib Zr1−a−b〕O3 (但し、0.
98≦x≦0.999、0.01≦a≦0.03、0.
41≦b≦0.48)を主成分とし、Pbの一部をS
r、Baのうち少なくとも一種で0.01〜0.06m
ol置換し、主成分1モルの重量に対し、副成分として
W、Sb、Nb、Taのうち少なくとも一種をWO 3
Sb2 3 、Nb2 5 、Ta2 5 に換算して0.1
〜1.2重量%添加し、さらに副成分としてSiをSi
2 に換算して0.01〜0.1重量%添加した圧電磁
器組成物を提供するものである。
In order to achieve the above object,
Therefore, in the present invention, Pbx [(Co1/3Nb2/3) A T
ib Zr1-ab] OThree(However, 0.98 ≦ x ≦
0.999, 0.01 ≦ a ≦ 0.03, 0.43 ≦ b ≦
0.49) as the main component, and based on 1 mol of the main component,
At least one of W, Sb, Nb, and Ta as a subcomponent
Seeds WOThree, SbTwoOThree, NbTwoOFive, TaTwoOFiveConvert to
0.1 to 1.2% by weight, and
Si to SiOTwo0.01 to 0.1% by weight
And the Pbx [(Co1/3Nb
2/3) A Tib Zr1-ab] OThree(However, 0.
98 ≦ x ≦ 0.999, 0.01 ≦ a ≦ 0.03, 0.
41 ≦ b ≦ 0.48) as a main component, and a part of Pb is S
at least one of r and Ba is 0.01 to 0.06 m
ol-substituted, as an accessory component to 1 mole of the main component
WO, Sb, Nb, Ta at least one of WO Three,
SbTwoOThree, NbTwoOFive, TaTwoOFiveConverted to 0.1
To 1.2% by weight, and Si as a subcomponent
OTwo0.01% to 0.1% by weight of piezoelectric
Container composition.

【0008】この構成によりキュリー温度が十分に高
く、長辺方向伸び振動モードの圧電歪定数(d31)が
200×10-12 m/vを超える圧電磁器が得られ、1
50℃前後の温度での使用に問題がなく、加工時のクラ
ックやカケが少ないアクチュエータを作製することが可
能となる。
With this configuration, a piezoelectric ceramic having a sufficiently high Curie temperature and a piezoelectric strain constant (d31) of 200 × 10 −12 m / v in the long-side extension vibration mode can be obtained.
There is no problem in use at a temperature of about 50 ° C., and it is possible to manufacture an actuator with few cracks and chips during processing.

【0009】チタン酸ジルコン酸鉛に第三成分としてP
b(Co1/3 Nb2/3 )O3 を添加することにより、構
成したアクチュエータを高温(150℃前後)での使用
した場合の劣化を少なくすることができる。
[0009] Lead zirconate titanate contains P as a third component.
By adding b (Co 1/3 Nb 2/3 ) O 3 , deterioration when the constituted actuator is used at a high temperature (around 150 ° C.) can be reduced.

【0010】また副成分としてW、Sb、Nb、Taの
うち少なくとも一種をWO3 、Sb 2 3 、Nb
2 5 、Ta2 5 に換算して主成分1モルの重量に対
し0.1〜1.2重量%添加することにより圧電歪定数
を大きくすることができ、焼成後の粒子径をより小さく
することが可能となる。
[0010] In addition, W, Sb, Nb, Ta
At least one of them is WOThree, Sb TwoOThree, Nb
TwoOFive, TaTwoOFiveTo the weight of 1 mole of the main component
And 0.1 to 1.2% by weight of the piezoelectric strain constant
And the particle size after firing is smaller.
It is possible to do.

【0011】さらに副成分としてSiをSiO2 に換算
して主成分1モルの重量に対し0.01〜0.1重量%
添加することにより、圧電磁器内の粒子間の結合力を大
きくすることができ、その結果加工時のクラックやカケ
を少なくし、アクチュエータを構成した場合の駆動時の
クラック発生を少なくすることが可能となる。
Further, as a subcomponent, Si is converted to SiO 2 and 0.01 to 0.1% by weight based on 1 mol of the main component.
By adding, the bonding force between the particles in the piezoelectric ceramic can be increased, and as a result, cracks and chips during processing can be reduced, and cracks during driving when an actuator is configured can be reduced. Becomes

【0012】Pbの一部をSr、Baのうちの少なくと
も一種で0.01〜0.06mol置換することによ
り、前述の利点を損なうことなく、更に圧電歪定数を高
くすることができる。
By substituting 0.01 to 0.06 mol of at least one of Sr and Ba for part of Pb, the piezoelectric strain constant can be further increased without impairing the above-mentioned advantages.

【0013】[0013]

【発明の実施の形態】本発明の実施例について説明す
る。出発原料として化学的に純粋なPbO、TiO2
ZrO2 、CoO、Nb2 5 、Sb2 3 、Ta2
5 、WO3 、BaCO3 、SrCO3 を用い、焼成後の
成分が表1、表2に示す所定の組成になるように秤量
し、ボールミルにて湿式混合を行った。それから混合粉
を空気中850℃〜950℃で仮焼成した後、ボールミ
ルにて湿式粉砕した。
Embodiments of the present invention will be described. Chemically pure PbO, TiO 2 ,
ZrO 2 , CoO, Nb 2 O 5 , Sb 2 O 3 , Ta 2 O
5 , WO 3 , BaCO 3 , and SrCO 3 were weighed so that the components after firing had the predetermined compositions shown in Tables 1 and 2, and were wet-mixed with a ball mill. Then, the mixed powder was calcined at 850 ° C. to 950 ° C. in the air, and then wet-pulverized by a ball mill.

【0014】次に、このようにして得られた粉体に有機
バインダーを加え造粒を行い、2000kg/cm2
圧力にて成形した。この成形体を空気雰囲気中で110
0℃〜1240℃の温度で焼成した。
Next, an organic binder was added to the powder thus obtained, and granulation was performed, followed by molding at a pressure of 2000 kg / cm 2 . This molded body is placed in an air atmosphere for 110 minutes.
Baking was performed at a temperature of 0 ° C to 1240 ° C.

【0015】このようにして得られた焼結体を厚さ1m
mに研磨した後、得られた素子の両端に銀の焼付電極を
形成後、縦横12×3mmの矩形に加工し、80℃〜1
50℃の絶縁油中で、電圧2kv/mm〜3kv/m
m、30分の条件で分極処理を行った。
[0015] The sintered body obtained in this way has a thickness of 1 m.
After polishing to 2 m, silver printed electrodes were formed on both ends of the obtained device, and then processed into a rectangle of 12 × 3 mm in length and width, and 80 ° C. to 1 ° C.
In insulating oil at 50 ° C, voltage 2 kv / mm to 3 kv / m
Polarization was performed under the conditions of m and 30 minutes.

【0016】そして得られた評価用素子をインピーダン
スアナライザーにより素子静電容量(c)、共振周波数
(fr)、反共振周波数(fa)を測定した。この測定
結果をもとに電圧歪定数(d31)、機械的品質係数
(Qm)を計算により求めた。以上の方法で得られた結
果を表1、表2に示す。
The obtained evaluation element was measured for element capacitance (c), resonance frequency (fr), and anti-resonance frequency (fa) using an impedance analyzer. Based on the measurement results, a voltage distortion constant (d31) and a mechanical quality factor (Qm) were calculated. Tables 1 and 2 show the results obtained by the above method.

【0017】キュリー温度については熱分析装置を用い
て測定を行った。
The Curie temperature was measured using a thermal analyzer.

【0018】また圧電磁器基板の粒子や破断面の状態を
走査型電子顕微鏡にて観察した。
The state of the particles and the fracture surface of the piezoelectric ceramic substrate was observed with a scanning electron microscope.

【0019】高温による変位の劣化度の測定としては積
層型アクチュエータ(層間20μm−20層−縦横15
×2.5mm)を作製し、150℃の温度で層間厚みに
対し2kv/mmになる直流矩形波を印加する高温負荷
試験を行った。そして試験前と250時間連続試験後の
素子の変位を変位計にて測定し、その差より変位の変化
率を測定した。結果を表1、表2に示した。この値がゼ
ロに近い程素子の耐久性が良いと判断できる。なお表
1、表2において*印は本発明の範囲外の比較例であ
る。
As a measurement of the degree of displacement deterioration due to high temperature, a multilayer actuator (interlayer: 20 μm-20 layers—length and width: 15 μm)
× 2.5 mm), and subjected to a high-temperature load test in which a DC rectangular wave having a thickness of 2 kv / mm with respect to the interlayer thickness was applied at a temperature of 150 ° C. The displacement of the element before the test and after the continuous test for 250 hours was measured by a displacement meter, and the rate of change of the displacement was measured from the difference. The results are shown in Tables 1 and 2. It can be determined that the closer the value is to zero, the better the durability of the element. In Tables 1 and 2, an asterisk is a comparative example outside the scope of the present invention.

【0020】[0020]

【表1】 [Table 1]

【0021】[0021]

【表2】 [Table 2]

【0022】本発明における各数値限定は下記の理由に
よるものである。
Each numerical limitation in the present invention is based on the following reasons.

【0023】xが0.98より小さくなると、圧電歪定
数(d31)が所望よりも小さくなり、高温負荷試験後
の変位の変化率も大きくなる(試料No.1、27参
照)。
When x is smaller than 0.98, the piezoelectric strain constant (d31) becomes smaller than desired, and the rate of change in displacement after the high-temperature load test also increases (see Sample Nos. 1 and 27).

【0024】ところで図1は、図1におけるA、B A:Pbx〔(Co1/3 Nb2/3 0.015 Ti0.47Zr
0.515 〕O3 +Sb23 0.6wt%+SiO2 0.
05wt% B:(PbxSr0.03)〔(Co1/3 Nb2/3 0.015
Ti0.46Zr0.525 〕O3 +Sb2 3 0.6wt%+
SiO2 0.05wt% の組成の圧電磁器組成物において、その値を変化させた
場合の3点曲げ強度試験の結果を示す。図1より明らか
なように、xが0.98〜0.999の場合は、いずれ
も3点曲げ強度が12(kgf/mm2 )より大きな値
を示し、xが0.98よりも小さくなる場合及びxが
0.999よりも大きくなる場合は強度が低下すること
がわかる。
FIG. 1 shows A and B A: Pbx [(Co 1/3 Nb 2/3 ) 0.015 Ti 0.47 Zr in FIG.
0.515 ] O 3 + Sb 2 O 3 0.6 wt% + SiO 2
05 wt% B: (PbxSr 0.03 ) [(Co 1/3 Nb 2/3 ) 0.015
Ti 0.46 Zr 0.525 ] O 3 + Sb 2 O 3 0.6 wt% +
The results of a three-point bending strength test when the value is changed in a piezoelectric ceramic composition having a composition of 0.05 wt% of SiO 2 are shown. As is clear from FIG. 1, when x is 0.98 to 0.999, the three-point bending strength shows a value larger than 12 (kgf / mm 2 ), and x becomes smaller than 0.98. In the case and when x is larger than 0.999, the strength decreases.

【0025】aが0.01よりも小さい場合変位変化率
が大きくなり、高温負荷による変位劣化防止の効果が得
られない(試料No.5、31参照)。
When a is smaller than 0.01, the rate of change of displacement becomes large, and the effect of preventing displacement deterioration due to high temperature load cannot be obtained (see Sample Nos. 5, 31).

【0026】逆にaが0.03よりも大きい場合、機械
的品質係数(Qm)が大きくなり、また圧電歪定数も小
さくなる(試料No.8、34参照)。
Conversely, when a is larger than 0.03, the mechanical quality factor (Qm) increases and the piezoelectric strain constant also decreases (see Sample Nos. 8 and 34).

【0027】Ba、Srのうちの一種も含まない場合に
おいて、bが0.43より小さくなると、圧電歪定数が
小さくなり、機械的品質係数も大きくなり(試料No.
23参照)、同じくbが0.49よりも大きくなると、
これまた圧電歪定数が小さくなり、機械的品質係数も大
きくなる(試料No.26参照)。
In the case where one of Ba and Sr is not included, if b is smaller than 0.43, the piezoelectric strain constant becomes smaller and the mechanical quality coefficient becomes larger (sample No.
23), and when b is larger than 0.49,
Also, the piezoelectric strain constant becomes smaller and the mechanical quality factor becomes larger (see Sample No. 26).

【0028】Ba、Srのうちの少なくとも一種を含む
場合において、bが0.41より小さくなると、圧電歪
定数が小さくなり、機械的品質係数も大きくなり(試料
No.56参照)、同じくbが0.48よりも大きくな
ると、これまた圧電歪定数が小さくなり、機械的品質係
数も大きくなる(試料No.59参照)。
When at least one of Ba and Sr is included, if b is smaller than 0.41, the piezoelectric strain constant becomes smaller and the mechanical quality factor becomes larger (see Sample No. 56). When it is larger than 0.48, the piezoelectric strain constant becomes smaller, and the mechanical quality factor also becomes larger (see Sample No. 59).

【0029】また、副成分の含有量が主成分1モルに対
してW、Sb、Nb、Taのうち少なくとも一種がWO
3 、Sb2 3 、Nb2 5 、Ta2 5 に換算して
0.1重量%未満の場合は圧電歪定数が小さくなり(試
料No.9、35参照)、逆に1.2重量%を超える場
合は圧電歪定数が小さくなり高温負荷試験後の変位の劣
化が大きくなる(試料No.12、38参照)。
When the content of the subcomponent is at least one of W, Sb, Nb and Ta relative to 1 mol of the main component,
3, Sb 2 O 3, Nb 2 O 5, ( see Sample Nanba9,35) piezoelectric constant becomes smaller in the case of Ta less than 2 O 5 in terms of 0.1% by weight, 1.2 to reverse If it exceeds 10% by weight, the piezoelectric strain constant becomes small and the deterioration of the displacement after the high temperature load test becomes large (see Sample Nos. 12 and 38).

【0030】図2は本発明の実施例である試料No.1
1の研磨面をエッチング処理した電子顕微鏡写真であ
り、図3は比較例である試料No.9を同様に観察した
電子顕微鏡写真である。
FIG. 2 shows a sample No. 1 according to an embodiment of the present invention. 1
3 is an electron micrograph showing the polished surface of the sample No. 1 etched. 9 is an electron micrograph of the same observation.

【0031】本発明の実施例を示す図2における粒径が
比較例を示す図3に比べ半分以下であり、また実施例の
粒子の大きさも比較例に比べ均一になっていることが分
かる。この比較から、本発明における副成分を添加する
ことによる粒子系の微細化・均一化効果は明らかであ
る。
It can be seen that the particle size in FIG. 2 showing the example of the present invention is less than half that of FIG. 3 showing the comparative example, and the particle size of the example is more uniform than in the comparative example. From this comparison, it is clear that the effect of adding the auxiliary component in the present invention is to make the particle system finer and more uniform.

【0032】またPbの一部をBa、Srの少なくとも
一種で置換した場合も、同様の効果が得られる。
The same effect can be obtained when a part of Pb is replaced with at least one of Ba and Sr.

【0033】図4は本発明の実施例である試料No.1
5の素子破断面の電子顕微鏡写真、図5は比較例として
試料No.15のSiO2 添加量をゼロとし、本発明の
実施例と同様の手法で作製した素子の破断面の電子顕微
鏡写真である。
FIG. 4 shows sample No. 1 according to an embodiment of the present invention. 1
5 is an electron micrograph of the fracture surface of the element, and FIG. 15 is an electron micrograph of a fractured surface of an element manufactured by the same method as in the example of the present invention, with the amount of SiO 2 added being zero.

【0034】副成分であるSiO2 が存在する場合の、
本発明の実施例に対する図4の場合では、破断面に粒子
の形がほとんど見られず、粒子内で破断していることが
わかる。これは粒子同士の結合力が強いことを意味して
いる。
When SiO 2 as a subcomponent is present,
In the case of FIG. 4 for the example of the present invention, the shape of the particles is hardly seen on the fracture surface, and it can be seen that the particles are broken within the particles. This means that the bonding force between the particles is strong.

【0035】一方、比較例である、副成分としてSiO
2 を添加していない図5の場合では、粒子の形がはっき
りしており、破断が粒界で起こっていることがわかる。
これは粒子間の結合力が弱いことを意味している。この
ように図4と図5との比較により副成分のSiO2 の添
加効果は明らかである。
On the other hand, as a comparative example, SiO
In the case of FIG. 5 where 2 was not added, the shape of the particles was clear, and it can be seen that the fracture occurred at the grain boundary.
This means that the bonding force between the particles is weak. As described above, the effect of adding the sub-component SiO 2 is apparent from the comparison between FIG. 4 and FIG.

【0036】またPbの一部をBa、Srの少なくとも
一種で置換した場合も同様の効果が得られる。
The same effect can be obtained when a part of Pb is replaced with at least one of Ba and Sr.

【0037】副成分としてSiをSiO2 に換算して
0.01〜0.1重量%に限定したのは、0.01重量
%未満では粒子間の結合力が強いという本発明の効果が
なく(図4、図5参照)、また0.1重量%を超えると
圧電歪定数が200×10-12m/v以下と小さくな
り、高温負荷試験後の変位劣化も大きくなる(絶対値で
2.0%を超えると信頼性が悪い)ためである(試料N
o.14、40参照)。
The reason why Si is limited to 0.01 to 0.1% by weight in terms of SiO 2 as a subcomponent is that if less than 0.01% by weight, there is no effect of the present invention that the bonding force between particles is strong. (See FIG. 4 and FIG. 5) When it exceeds 0.1% by weight, the piezoelectric strain constant becomes as small as 200 × 10 −12 m / v or less, and the displacement deterioration after the high temperature load test also becomes large (in absolute value, 2%). This is because the reliability is poor if over 0.0%.
o. 14, 40).

【0038】ところでPbの一部をBa、Srの少なく
とも一種で置換する場合、その量が0.01molより
少ない場合は圧電歪定数を大きくする効果が得られず
(試料No.44、45を比較参照することにより、N
o.44にSrを0.01mol添加したときに圧電歪
定数が200→235(×10-12 m/v)に向上する
ことがわかる)、焼成時のPb蒸発量を減らす効果も得
られない。
By the way, when a part of Pb is replaced with at least one of Ba and Sr, if the amount is less than 0.01 mol, the effect of increasing the piezoelectric strain constant cannot be obtained (compared to Sample Nos. 44 and 45). By reference, N
o. It can be seen that when 0.01 mol of Sr is added to 44, the piezoelectric strain constant increases from 200 to 235 (× 10 −12 m / v)), and the effect of reducing the amount of Pb evaporation during firing cannot be obtained.

【0039】また0.06molを超えると高温負荷試
験後の変位劣化が大きくなる(試料No.47参照)。
On the other hand, when the content exceeds 0.06 mol, the displacement deterioration after the high temperature load test becomes large (see Sample No. 47).

【0040】熱分析装置による測定により、本実施例の
圧電磁器組成物はすべて280℃以上のキュリー温度を
有することがわかった。
The measurement by the thermal analyzer revealed that all the piezoelectric ceramic compositions of this example had a Curie temperature of 280 ° C. or higher.

【0041】このような理由により特許請求の範囲の請
求項1、2の数値範囲を限定した。
For these reasons, the numerical ranges of claims 1 and 2 are limited.

【0042】このように本発明では、高い圧電歪定数
(d31)を持ち、機械的品質係数(Qm)が低く、劣
化が少なく、粒子径が微細・均一でかつ粒界強度が強
く、キュリー温度の高い圧電磁器組成物が得られる。
As described above, the present invention has a high piezoelectric strain constant (d31), a low mechanical quality factor (Qm), little deterioration, a fine and uniform particle diameter, a strong grain boundary strength, and a Curie temperature. Thus, a piezoelectric ceramic composition having a high value can be obtained.

【0043】これらのことより、本発明によれば、高い
圧電歪定数を持ち、高温での変位の耐久性がよく、粒子
系が均一で粒界強度が強く、加工時のワレ・カケの少な
く、且つ層間が薄く、駆動時にクラックが入りにくい積
層型アクチュエータの構成が可能となる。
From the above, according to the present invention, it has a high piezoelectric strain constant, good durability against displacement at high temperatures, a uniform particle system, a high grain boundary strength, and a small cracking and chipping during processing. In addition, it is possible to form a laminated actuator having a thin interlayer and hardly causing a crack when driven.

【0044】[0044]

【発明の効果】本発明によれば下記の効果を奏すること
ができる。
According to the present invention, the following effects can be obtained.

【0045】(1)キュリー温度が十分に高く、長辺方
向伸び振動モードの圧電歪定数(d31)が200×1
-12 m/vを超える圧電磁器が得られ、150℃前後
の温度での使用に問題がなく、加工時のクラックやカケ
が少ないアクチュエータを作製することが可能となる。
(1) The Curie temperature is sufficiently high and the piezoelectric strain constant (d31) in the longitudinal vibration mode is 200 × 1.
A piezoelectric ceramic exceeding 0 -12 m / v can be obtained, and there is no problem in use at a temperature of about 150 ° C., and an actuator with few cracks and chips during processing can be manufactured.

【0046】チタン酸ジルコン酸鉛に第三成分としてP
b(Co1/3 Nb2/3 )O3 を添加することにより、構
成したアクチュエータを高温(150℃前後)での使用
した場合の劣化を少なくすることができる。
As a third component, lead zirconate titanate has P
By adding b (Co 1/3 Nb 2/3 ) O 3 , deterioration when the constituted actuator is used at a high temperature (around 150 ° C.) can be reduced.

【0047】また副成分としてW、Sb、Nb、Taの
うち少なくとも一種をWO3 、Sb 2 3 、Nb
2 5 、Ta2 5 に換算して主成分1モルの重量に対
し0.1〜1.2重量%添加することにより圧電歪定数
を大きくすることができ、焼成後の粒子径をより小さく
することが可能となる。
Further, W, Sb, Nb, Ta
At least one of them is WOThree, Sb TwoOThree, Nb
TwoOFive, TaTwoOFiveTo the weight of 1 mole of the main component
And 0.1 to 1.2% by weight of the piezoelectric strain constant
And the particle size after firing is smaller.
It is possible to do.

【0048】さらに副成分としてSiをSiO2 に換算
して主成分1モルの重量に対し0.01〜0.1重量%
添加することにより、圧電磁器内の粒子間の結合力を大
きくすることができ、その結果加工時のクラックやカケ
を少なくし、アクチュエータを構成した場合の駆動時の
クラック発生を少なくすることが可能となる。
Further, as a sub-component, Si is converted to SiO 2 and 0.01 to 0.1% by weight based on 1 mol of the main component.
By adding, the bonding force between the particles in the piezoelectric ceramic can be increased, and as a result, cracks and chips during processing can be reduced, and cracks during driving when an actuator is configured can be reduced. Becomes

【0049】(2)Pbの一部をSr、Baのうちの少
なくとも一種で0.01〜0.06mol置換すること
により、前述の利点を損なうことなく、更に圧電歪定数
を高くすることができる。
(2) By substituting 0.01 to 0.06 mol of at least one of Sr and Ba for a part of Pb, it is possible to further increase the piezoelectric strain constant without deteriorating the aforementioned advantages. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】Pbの値を横軸にしたときの三点曲げ強度の値
を示すものである。
FIG. 1 shows three-point bending strength values when the value of Pb is plotted on the horizontal axis.

【図2】試料No.11(実施例)の素子粒子径を観察
した電子顕微鏡写真である。
FIG. 11 is an electron micrograph showing the observation of the element particle size of Example 11 (Example).

【図3】試料No.9(比較例)の素子粒子径を観察し
た電子顕微鏡写真である。
FIG. 9 is an electron micrograph showing the particle size of an element of Comparative Example 9 (Comparative Example).

【図4】試料No.15(実施例)の素子破断面を観察
した電子顕微鏡写真である。
FIG. 15 is an electron micrograph showing a 15 (Example) element fracture surface.

【図5】前記試料No.15のSiO2 添加量をゼロと
して作製した素子の破断面を観察した電子顕微鏡写真で
ある。
FIG. 15 is an electron micrograph of a fractured surface of a device fabricated with the amount of SiO 2 added being zero.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】Pbx〔(Co1/3 Nb2/3 )a Tib
Zr1−a−b〕O3 (但し、0.98≦x≦0.999、0.01≦a≦
0.03、0.43≦b≦0.49)を主成分とし、 主成分1モルの重量に対し、 副成分としてW、Sb、Nb、Taのうち少なくとも一
種をWO3 、Sb2 3 、Nb2 5 、Ta2 5 に換
算して0.1〜1.2重量%添加し、 さらに副成分としてSiをSiO2 に換算して0.01
〜0.1重量%添加含有していることを特徴とする圧電
磁器組成物。
1. The method of claim 1, wherein Pbx [(Co1/3Nb2/3) A Tib
 Zr1-ab] OThree (However, 0.98 ≦ x ≦ 0.999, 0.01 ≦ a ≦
0.03, 0.43 ≦ b ≦ 0.49) as a main component, and at least one of W, Sb, Nb, and Ta as a subcomponent with respect to 1 mol of the main component.
Seeds WOThree, SbTwoO Three, NbTwoOFive, TaTwoOFiveConvert to
0.1 to 1.2% by weight, and Si as SiOTwoConverted to 0.01
Characterized by containing 0.1 to 0.1% by weight.
Porcelain composition.
【請求項2】Pbx〔(Co1/3 Nb2/3 )a Tib
Zr1−a−b〕O3 (但し、0.98≦x≦0.999、0.01≦a≦
0.03、0.41≦b≦0.48)を主成分とし、P
bの一部をBa、Srのうち少なくとも一種で0.01
〜0.06mol置換し、 主成分1モルの重量に対し、 副成分としてW、Sb、Nb、Taのうち少なくとも一
種をWO3 、Sb2 3 、Nb2 5 、Ta2 5 に換
算して0.1〜1.2重量%添加し、 さらに副成分としてSiをSiO2 に換算して0.01
〜0.1重量%添加含有していることを特徴とする圧電
磁器組成物。
2. The method of claim 2, wherein Pbx [(Co1/3Nb2/3) A Tib
 Zr1-ab] OThree (However, 0.98 ≦ x ≦ 0.999, 0.01 ≦ a ≦
0.03, 0.41 ≦ b ≦ 0.48) as main components, and P
b is at least one of Ba and Sr and is 0.01
To 0.06 mol, and at least one of W, Sb, Nb, and Ta as an accessory component with respect to the weight of 1 mole of the main component.
Seeds WOThree, SbTwoO Three, NbTwoOFive, TaTwoOFiveConvert to
0.1 to 1.2% by weight, and Si as SiOTwoConverted to 0.01
Characterized by containing 0.1 to 0.1% by weight.
Porcelain composition.
JP13352899A 1999-05-14 1999-05-14 Piezoelectric ceramic composition Expired - Lifetime JP3761355B2 (en)

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JP2002293625A (en) * 2001-03-29 2002-10-09 Kyocera Corp Piezoelectric ceramic for actuator, layer-built piezoelectric actuator and jetting apparatus
EP1354861A1 (en) * 2000-12-28 2003-10-22 Bosch Automotive Systems Corporation Ceramic material and piezoelectric element using the same
JP2007022841A (en) * 2005-07-14 2007-02-01 Tdk Corp Piezoelectric porcelain composition
JP2010001200A (en) * 2008-06-23 2010-01-07 Tdk Corp Piezoelectric ceramic and piezoelectric element
JP2012062215A (en) * 2010-09-16 2012-03-29 Nec Tokin Corp Piezoelectric ceramic material and piezoelectric actuator

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1354861A1 (en) * 2000-12-28 2003-10-22 Bosch Automotive Systems Corporation Ceramic material and piezoelectric element using the same
EP1354861A4 (en) * 2000-12-28 2007-02-28 Bosch Automotive Systems Corp Ceramic material and piezoelectric element using the same
JP2002293625A (en) * 2001-03-29 2002-10-09 Kyocera Corp Piezoelectric ceramic for actuator, layer-built piezoelectric actuator and jetting apparatus
JP4688329B2 (en) * 2001-03-29 2011-05-25 京セラ株式会社 Piezoelectric ceramic for actuator, laminated piezoelectric actuator, and injection device
JP2007022841A (en) * 2005-07-14 2007-02-01 Tdk Corp Piezoelectric porcelain composition
JP4736585B2 (en) * 2005-07-14 2011-07-27 Tdk株式会社 Piezoelectric ceramic composition
JP2010001200A (en) * 2008-06-23 2010-01-07 Tdk Corp Piezoelectric ceramic and piezoelectric element
JP2012062215A (en) * 2010-09-16 2012-03-29 Nec Tokin Corp Piezoelectric ceramic material and piezoelectric actuator

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