JP2000319089A - Separation of inner vessel crucible in single crystal semiconductor production device and separation member for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily separate the inner vessel crucible (inner crucible) from an outer vessel crucible (outer crucible) without causing breakage of the inner crucible, to reuse the inner crucible and to easily handle the inner crucible, in a separation method for an inner vessel crucible in a single crystal semiconductor production device. SOLUTION: In this device, a separation member 12 which has high purity, excellent high-temperature resistance, good separability from both an outer crucible 2 and an inner crucible 3 and also consists of such a flexible material as to enable wrapping of the inner crucible 3, is interposed between the outer crucible 2 and the inner crucible 3. After the pulling-up of a single crystal semiconductor, by fastening a lifting-up means to a peripheral end 13 of the separation member 12 and lifting up the separation member 12, the inner crucible 3 is separated from the outer crucible 2. Thus, the inner crucible 3 can easily be separated from the outer crucible 2 without causing any breakage of the inner crucible 3, and also the inner crucible 3 can be reused and further, handling of the inner crucible 3 can be facilitated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for separating an inner crucible from an outer crucible in an apparatus for manufacturing a single crystal semiconductor having an outer crucible and an inner crucible, and more particularly, to breaking the inner crucible. The present invention relates to a method for separating an inner tank crucible, which can be easily separated and reused without difficulty, and further facilitates handling of the inner tank crucible, and a separating member thereof.

[0002]

2. Description of the Related Art A single crystal semiconductor manufacturing apparatus of this type has been provided with an outer tank crucible and an inner tank crucible with the recent increase in diameter of single crystal semiconductors. As shown in FIG. 1, the apparatus for manufacturing a single crystal semiconductor has an outer tank crucible 2 made of, for example, carbon and fitted inside the outer tank crucible 2 made of, for example, quartz, as shown in FIG. Inner crucible 3
And a heater 4 provided around the outside of the outer tank crucible 2 and a heat shield 5 provided around the outside of the heater 4. In FIG. 1, reference numeral 6 denotes a rotation axis for rotating the outer tank crucible 2, reference numeral 7 denotes an electrode of the heater 4, and reference numeral 8 denotes a wire serving as a seed crystal pulling shaft described later. I have.

Then, an inner tank crucible 3 is fitted inside the outer tank crucible 2, a high-purity semiconductor material 9 is put in the inner tank crucible 3, and the inside of the housing 1 is kept in a vacuum state. Together with the heater 4 in an atmosphere of argon (Ar) gas.
Is heated to a high temperature of 1500 to 1600 ° C and melted.
A seed crystal 10 attached to the tip of the wire 8 is brought into contact with the molten material (9) and pulled up while rotating in accordance with the growth of the single crystal, thereby obtaining a round bar-shaped single crystal semiconductor 11 (called an “ingot”). ) Was going to manufacture.

[0004]

However, in the above-described apparatus for manufacturing a single-crystal semiconductor, the current 1500-1600 ° C.
Under such a use condition, the inner tank crucible 3 was fused inside the outer tank crucible 2, and it was not possible to remove the inner tank crucible 3 after manufacturing the single crystal semiconductor 11 even when trying to remove it. Therefore, the used inner tank crucible 3 is broken and removed using, for example, a rag and a hammer. Therefore, an expensive inner tank crucible 3 made of, for example, quartz cannot be reused, and a new inner tank crucible 3 must be used every time a single crystal semiconductor is manufactured, which increases costs. there were. Also, when the used inner tank crucible 3 is broken and removed by using the above-mentioned rag and hammer, the outer tank crucible 2 may be scratched or damaged, for example, an expensive outer tank crucible made of carbon. The use of No. 2 could be hindered.

Accordingly, the present invention has been made to solve the above-mentioned problems, and it has been found that the inner tank crucible can be easily separated without being destroyed and can be reused, and furthermore, the inner tank crucible can be easily handled. An object of the present invention is to provide a method of separating an inner tank crucible in a crystal semiconductor manufacturing apparatus and a separation member thereof.

[0006]

In order to achieve the above object, a method for separating an inner tank crucible according to the present invention comprises fitting an inner tank crucible inside an outer tank crucible and placing a semiconductor in the inner tank crucible. In a device for manufacturing a single-crystal semiconductor by putting a material and melting it, bringing a seed crystal into contact with the molten material, and pulling up while rotating in accordance with the growth of the single crystal, a device between the outer tank crucible and the inner tank crucible is used. In addition, a member made of a material having high purity, excellent high-temperature heat resistance, good separability from both crucibles, and flexibility and capable of wrapping the inner tank crucible is interposed, and the above-mentioned member is pulled after the single crystal semiconductor is pulled up. The inner crucible is separated from the outer crucible by hanging and lifting the peripheral end of the inner crucible.

[0007] Further, the separating member of the inner tank crucible according to the present invention is such that the inner tank crucible is fitted inside the outer tank crucible, the semiconductor material is put into the inner tank crucible and melted, and the molten material is seeded. In a device for producing a single crystal semiconductor by bringing a crystal into contact and pulling up while rotating in accordance with the growth of the single crystal, a member interposed between the outer tank crucible and the inner tank crucible, with high purity It is made of a material having excellent high-temperature heat resistance, good separability from both crucibles and flexibility, and formed so as to wrap the inner crucible, and lifts the inner crucible from the outer crucible at the peripheral end. It has a hook for separating.

[0008] The member interposed between the outer tank crucible and the inner tank crucible is made of carbon fiber. The member interposed between the outer tank crucible and the inner tank crucible may be formed in a net shape.

Furthermore, the member interposed between the outer tank crucible and the inner tank crucible may be formed in a sheet shape.

[0010]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional explanatory view showing an apparatus for manufacturing a single crystal semiconductor to which the method for separating an inner tank crucible according to the present invention is applied. This single crystal semiconductor manufacturing apparatus
An outer tank crucible 2 made of, for example, carbon, an inner tank crucible 3 made of, for example, quartz and fitted inside the outer tank crucible 2, and an outer side of the outer tank crucible 2 are provided inside the housing 1. A heater 4 is provided so as to be surrounded, and a heat shield 5 is provided so as to surround the outside of the heater 4. In FIG. 1, reference numeral 6 denotes a rotation axis for rotating the outer tank crucible 2, reference numeral 7 denotes an electrode of the heater 4, and reference numeral 8 denotes a wire serving as a seed crystal pulling shaft described later. I have.

Then, the inner tank crucible 3 is fitted inside the outer tank crucible 2 and silicon as a high-purity semiconductor material 9 is put into the inner tank crucible 3. In the atmosphere of argon (Ar) gas, the heater 4 is heated to a high temperature of 1500 to 1600 ° C. and melted, and the seed crystal 10 attached to the tip of the wire 8 is melted on the molten material (9). The rod-shaped single-crystal semiconductor 11 (single-crystal silicon, which is referred to as an “ingot”) is manufactured by bringing it into contact and pulling up while rotating according to the growth of the single crystal. The single crystal semiconductor 11 manufactured in this way has been increasing in diameter in recent years.

A method for separating the inner crucible 3 from the outer crucible 2 after manufacturing the single crystal semiconductor 11 in the apparatus for manufacturing a single crystal semiconductor will be described with reference to FIG. First, as shown in FIG. 2A, in the process of manufacturing a single crystal semiconductor, when the inner tank crucible 3 is fitted inside the outer tank crucible 2, the outer tank crucible 2 and the inner tank crucible 3 are fitted.
Between the two crucibles with high purity and high heat resistance
A separating member 12 made of a material having good separability from the material 3 and having flexibility and capable of surrounding the inner tank crucible 3 is interposed. At this time, the peripheral end 13 of the separating member 12
The outer tank crucible 2 hangs around the upper edge.

After the inner crucible 3 is fitted inside the outer crucible 2 in this manner, a high-purity semiconductor material 9 is put in the inner crucible 3 in FIG. By heating to a high temperature of 1500 to 1600 ° C. and melting, the seed material 10 attached to the tip of the wire 8 is brought into contact with the molten material (9) and pulled up while rotating according to the growth of the single crystal, thereby obtaining a round shape. The rod-shaped single crystal semiconductor 11 is manufactured.

Next, after the single crystal semiconductor 11 is pulled up, as shown in FIG. 2 (b), the peripheral end 13 of the separating member 12 is gathered at one place, and this gathered part is hooked up with a hook such as a crane. Hook at 14. Then, the crane is operated to raise the hook 14 by an appropriate amount as shown by the arrow A, and the peripheral end 13 of the separating member 12 is tensioned. At this time, if necessary, the end surface of the upper edge of the outer tank crucible 2 may be held down by a stopper member or the like.

Thereafter, as shown in FIG. 2 (c), the crane is fully operated to further raise the hook 14 as shown by the arrow A. Then, the separating member 12 is lifted by the hook 14 of the crane, and the inner tank crucible 3 wrapped by the separating member 12 is lifted together with the separating member 12. As a result, the inner tank crucible 3 is separated upward from the outer tank crucible 2 as shown in FIG. Thus, the inner tank crucible 3 can be easily separated without breaking. At this time, there is no possibility that the outer tank crucible 2 will be damaged.

Further, the inner tank crucible 3 separated as described above can be handled at an arbitrary place by a crane or the like while being wrapped in the separating member 12 as it is.
Further, the inner tank crucible 3 thus separated is handled at a predetermined place, and then the separating member 12 is removed, and the separated member 12 is carried to the next washing step, where the semiconductor material 9 remaining inside is washed. It is washed, dried with nitrogen or the like, stored, and reused.

Next, the separating member 12 used for carrying out the above-described method for separating the inner tank crucible will be described with reference to FIG. First, also in this case, an apparatus for manufacturing a single crystal semiconductor to which the separation member 12 is applied is configured as shown in FIG. 1 described above. The separating member 12 interposed between the outer tank crucible 2 and the inner tank crucible 3 shown in FIG. 2 is high in purity and excellent in high-temperature heat resistance, has good separation properties from the two crucibles 2 and 3, and It is made of a material having flexibility and is formed so as to surround the inner tank crucible 3, as shown in FIG.
At the peripheral end of the wrapping portion 15, hooks 16, 16, for lifting and separating the inner tank crucible 3 from the outer tank crucible 2.
….

Here, silicon as a high-purity semiconductor material is put into the inner tank crucible 3 and the surroundings are kept in a vacuum state, and the temperature is raised to 1500 to 1600 ° C. by a heater in an argon (Ar) gas atmosphere. Under the use condition of heating and melting at a high temperature, as the material of the separating member 12, carbon fiber excellent in high temperature heat resistance is used. Further, since a high-purity single crystal semiconductor is manufactured, carbon fibers as a material of the separation member 12 are:
High purity treatment is applied.

The separating member 12 is formed by twisting carbon fibers to form a string, knitting a net having a mesh of an appropriate size with the string, and the wrapping portion 15 is formed in a net shape. . Therefore, the wrapping portion 15
Has the flexibility to wrap the inner tank crucible 3. The wrapping portion 15 is formed, for example, in a rectangular shape as a whole, and has a size such that it can wrap the entire inner tank crucible 3. Further, at the peripheral end, for example, at the four corners, of the rectangular wrapping portion 15, the hooking portions 16, 1 formed in a ring shape with the carbon fiber string are provided.
6, ... are provided.

The use of the inner tank crucible separating member 12 thus configured is similar to the method of separating the inner tank crucible described with reference to FIG. Are collectively hung at one place with a hook such as a crane and lifted, whereby the inner tank crucible 3 can be separated from the outer tank crucible 2 upward. Thereby, the inner tank crucible 3
Can be easily separated without breaking. At this time, there is no possibility that the outer tank crucible 2 will be damaged.

FIG. 4 is an explanatory plan view showing another embodiment of the separating member 12 of the inner tank crucible. The separation member 12 of this embodiment is formed by weaving carbon fibers to form a cloth, and forming the wrapping portion 15 in a sheet shape with the cloth.
The wrapping portion 15 is formed, for example, in a rectangular shape as a whole, and has a size such that it can wrap the entire inner tank crucible 3. Further, at the peripheral end, for example, at the four corners of the rectangular wrapping portion 15, ring-shaped hooking portions 16, 1 made of the carbon fiber cloth are provided.
6, ... are provided. In this case, the temperature distribution transmitted from the outer tank crucible 2 to the inner tank crucible 3 can be prevented from changing much.

In the embodiment of FIGS. 3 and 4, the shape of the wrapping portion 15 of the separating member 12 is rectangular, but the present invention is not limited to this, and may be a hexagon, an octagon, a circle, or the like. It may be shaped. In addition, the hook 16 is not limited to the ring shape, and may have another shape as long as it can be hooked on a hook such as a crane.

[0023]

According to the method for separating an inner crucible of the present invention, the inner crucible can be separated from the outer crucible with high purity, high heat resistance, good separability from both crucibles, and flexibility. Separating the inner crucible from the outer crucible by interposing a member made of a material capable of wrapping the inner crucible, and suspending and lifting the peripheral end of the member after pulling up the single crystal semiconductor. Can be. In this case, the inner crucible can be easily separated without breaking. In addition,
At this time, there is no risk of damaging the outer tank crucible. Also,
The inner crucible separated as described above can be handled at an arbitrary place while being wrapped in the separating member as it is. Furthermore, the inner tank crucible thus separated can be washed and dried in the next washing step and reused, thereby reducing the cost.

Further, the separating member of the inner tank crucible of the present invention comprises:
A member interposed between the outer tank crucible and the inner tank crucible, made of a material having high purity, excellent high-temperature heat resistance, good separability from both the crucibles, and flexibility, and It is formed so that it can be wrapped, and has a latching portion at the peripheral end for lifting and separating the inner tank crucible from the outer tank crucible, so that the latching portion is latched after the single crystal semiconductor is pulled up. By lifting, the inner tank crucible can be separated from the outer tank crucible. in this case,
It can be easily separated without destroying the inner crucible. At this time, there is no possibility of damaging the outer tank crucible. Further, the inner tank crucible separated as described above can be handled at an arbitrary place while being wrapped in the separating member as it is.

[Brief description of the drawings]

FIG. 1 is an explanatory cross-sectional view showing a single crystal semiconductor manufacturing apparatus to which an inner tank crucible separation method according to the present invention is applied.

FIG. 2 is an explanatory sectional view showing a procedure of a method for separating an inner tank crucible according to the present invention.

FIG. 3 is an explanatory plan view showing an embodiment of a separation member of the inner tank crucible according to the present invention.

FIG. 4 is an explanatory plan view showing another embodiment of the separating member of the inner tank crucible.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Housing 2 ... Outer crucible 3 ... Inner crucible 4 ... Heater 5 ... Heat shield 9 ... Semiconductor material 10 ... Seed crystal 11 ... Single crystal semiconductor 12 ... Separation member 13 ... Peripheral edge 14 ... Hook 15 ... Envelope Part 16: Hanging part

Claims (5)

[Claims] 1. An inner tank crucible is fitted inside an outer tank crucible, a semiconductor material is put into the inner tank crucible and melted, and a seed crystal is brought into contact with the molten material to match the growth of a single crystal. In a device for manufacturing a single crystal semiconductor by pulling up while rotating, between the outer tank crucible and the inner tank crucible, high purity, high temperature heat resistance, good separation properties from both crucibles, and flexibility. A member made of a material having the above-mentioned structure and capable of enclosing the inner crucible is interposed, and after pulling up the single crystal semiconductor, the inner peripheral crucible is hooked and lifted to separate the inner crucible from the outer crucible. A method for separating an inner tank crucible, comprising: 2. An inner tank crucible is fitted inside an outer tank crucible, a semiconductor material is put into the inner tank crucible and melted, and a seed crystal is brought into contact with the molten material to match the growth of a single crystal. In a device for manufacturing a single crystal semiconductor by pulling up while rotating, a member interposed between the outer tank crucible and the inner tank crucible, having high purity, high heat resistance, and separation from the both crucibles It is made of a material having good properties and flexibility, and is formed so as to wrap the inner tank crucible, and has a hook at a peripheral end for lifting and separating the inner tank crucible from the outer tank crucible. Characteristic separation member for inner tank crucible. 3. The separating member for an inner tank crucible according to claim 2, wherein the member interposed between the outer tank crucible and the inner tank crucible is made of carbon fiber. 4. The separating member for an inner tank crucible according to claim 3, wherein the member interposed between the outer tank crucible and the inner tank crucible is formed in a net shape. 5. The separating member according to claim 3, wherein the member interposed between the outer tank crucible and the inner tank crucible is formed in a sheet shape.