JP2000315698A - Manufacture of semiconductor package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the mechanical strength of the connecting section between a semiconductor element and a circuit board, by reinforcing the adhesion between the element and board with an insulating resin before injecting a sealing resin composed of an inorganic filler and a liquid thermosetting resin, by injecting the sealing resin between the element and board by utilizing a capillary phenomenon and curing the resin by heating. SOLUTION: After a conductive adhesive 3 is applied to the front end of a gold bump 2 formed on the electrode terminal 5 of a semiconductor element 1, the element 1 is mounted on a circuit board 4 on which an appropriate amount of insulating adhesive 7 containing an inorganic filler is applied to an appropriate position. From the position, the adhesive 7 does not reach the connecting section between the element 1 and board 4 in the mounting area for the element 1 by aligning the bump 2 with an electrode terminal 5 formed on the board 4. The bump 2 is electrically connected to the terminal 5 by curing the resin 3 through heat treatment which is performed at about 120 deg.C for about one hour. Then, after a sealing resin is injected between the element 1 and board 4, a semiconductor package is manufactured by curing the resin 8 by heating the resin to about 150 deg.C. In the step of injecting the sealing resin 8, the semiconductor element 1 connected to the circuit board 4 is placed on a heat generating plate 9 and the surface of the substrate 4 is heated to 60-90 deg.C by means of the plate 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor package used for various electric and electronic devices, and more particularly to a method for manufacturing a semiconductor package having a size substantially equal to a semiconductor chip.

[0002]

2. Description of the Related Art Semiconductor packages contribute to miniaturization of industrial electronic equipment such as information communication equipment, office electronic equipment, home electronic equipment, measuring equipment, assembly robots, medical electronic equipment, and electronic toys. In addition, it is a component that protects and strengthens the semiconductor itself.

In order to manufacture a semiconductor package, a semiconductor element and a circuit board on which the semiconductor element is mounted are required. Conventionally, a wire bonding method has been mainly used for mounting a semiconductor element on a circuit board. However, recently, a flip chip method capable of reducing a mounting area of a semiconductor element has become mainstream.

In a circuit board on which a semiconductor element is mounted,
In the mounting of the semiconductor element by the wire bonding method, since the wire spreads from the electrode on the semiconductor element to the electrode of the wiring board located outside the semiconductor element, the arrangement of the electrodes on the wiring board is arranged at a pitch coarser than the electrode pitch of the semiconductor element. Is fine.

On the other hand, in the mounting of a semiconductor element by the flip-chip method, since the semiconductor element is mounted face down, the electrode arrangement of the semiconductor element and the electrode arrangement of the circuit board must be one-to-one. Therefore, a circuit board on which semiconductor elements are mounted by the flip-chip method is preferably a high-density substrate, that is, a substrate on which fine lines are formed. Further, in order to reduce the size of the semiconductor device, a circuit board in which wiring layers are connected by inner vias is required. A ceramic multilayer wiring board, a glass epoxy board, an aramid epoxy board, and the like satisfying the above demands.

On the other hand, since the semiconductor element is mounted face-down, it is necessary to protect the semiconductor element and ensure the reliability of the flip chip connection part. For this purpose, a sealing resin is injected between the semiconductor element and the circuit board. Regarding the reliability of the connection part, the thermal expansion coefficient of the semiconductor element often does not match the thermal expansion coefficient of the circuit board during a thermal shock test such as a heat cycle. In some cases, problems such as the occurrence of problems may occur. To cope with this, it is important to select a sealing resin material by adjusting the thermal expansion coefficient of the sealing resin. As a countermeasure, a method of adjusting the thermal expansion coefficient by selecting an inorganic filler material to be added to the sealing resin is adopted. Specifically, by adding a suitable amount of molten SiO ₂ having a small thermal expansion or crystalline SiO ₂ powder having a relatively large thermal expansion, the coefficient of thermal expansion can be controlled to an arbitrary value. By setting the coefficient of thermal expansion to about the middle of the coefficient of thermal expansion of the substrate, it becomes an effective means for the above-mentioned thermal shock test.

[0007]

However, according to the above-described conventional structure, when the sealing resin is injected into the gap between the semiconductor element and the circuit board, the gap is small, about 50 μm, so that the injection speed is slow and completely. A lot of time is spent before injection. For example, a semiconductor having a size of 10 mm × 10 mm requires 10 minutes or more, which is a problem in productivity. This is because the inclusion of the inorganic filler for adjusting the coefficient of thermal expansion as described above increases the viscosity of the sealing resin and takes time for injection. Furthermore, the remaining air bubbles often cause serious problems related to connection quality.

As shown in FIG. 7, a specific conventional method of injecting a sealing resin is that a sealing resin 8 to be injected has a somewhat low viscosity via a circuit board 4 on which a semiconductor element 1 is flip-chip mounted. Generally, a method of heating the heating plate 9 and gradually injecting it from one piece of the semiconductor element with a syringe is used. At this time, the sealing resin 8 is designed to have a low viscosity and a high fluidity when heated to a high temperature, so that the injection speed is increased. However, in the configuration using the conductive adhesive 3 for the bonding layer, the sealing resin 8 has a temperature higher than 60 ° C. If the temperature is increased, the conductive adhesive is softened, the bonding strength is reduced, and the wire is broken, resulting in poor connection. At this time, if one or more sides are simultaneously injected, bubbles in the gap between the circuit board 4 and the semiconductor element 1 cannot be removed but remain.

Therefore, a method using a pressure difference to speed up the injection of the sealing resin is conceivable. For example, there is a method in which after a semiconductor element is placed in a depressurized mold, a sealing resin is injected from the outside. However, in the face-down mounting by the bump connection, since the bonding area is small, the mechanical strength of the connection portion is low and not sufficient until the sealing resin is cured and integrated. For this reason, the connection part may be broken and disconnected due to mechanical or thermal shock.

[0010] A transfer molding method is a method used for general semiconductor packages, and a method using this method is also conceivable. The transfer molding method is used for QFP (Quad Flat Package) in which a semiconductor element is mounted on a lead frame by a wire bonding method, and a thermosetting resin such as an epoxy resin which is solid at room temperature is melted at a high temperature to form an inorganic filler. This is a method in which the granules kneaded, pulverized again, and powder molded are poured into a mold heated to a high temperature and cured. However, also in this case, the sealing resin melted at high temperature and high pressure is forcibly filled in a very thin gap by face-down mounting, but since the impact is further strengthened, the connection portion is easily broken, and the flip chip It was difficult to use as a sealing method.

In addition, in the conventional flip-chip mounting, it is difficult to perform an electrical inspection of the semiconductor package until the sealing resin is cured, so that a package with insufficient connection is produced and the yield is reduced. was there.

Accordingly, the present invention provides a production method in which a sealing resin is injected into a gap between a semiconductor element mounted face-down and a circuit board in a short time so that air bubbles do not enter, and curing can be performed in a short time. It is an object of the present invention to provide a method of manufacturing a semiconductor package which is highly efficient and can be manufactured at low cost.

[0013]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor package, comprising mounting at least one semiconductor element face down on a wiring pattern formed on a circuit board. A method for manufacturing a semiconductor package in which a sealing resin is sealed between the circuit board and the semiconductor element, wherein (a) when mounting the semiconductor element face down on a circuit board having a wiring pattern, In a region other than the connection electrode portion, after bonding the semiconductor element and the circuit board with an insulating resin,
(B) placing the face-down mounted circuit board such that the bottom surface of the circuit board is in contact with a heating plate;
(C) after heating the heating plate, and (d) after injecting a sealing resin composed of at least an inorganic filler and a liquid thermosetting resin between the semiconductor element and the circuit board by using a capillary phenomenon. By heating and curing,
A region including the face-down mounted semiconductor element and the circuit board and a region including a side surface portion are integrally formed with a sealing resin.

According to this manufacturing method, a sufficient mechanical strength of the connection portion is obtained because the adhesive is reinforced with an insulating resin before the sealing resin is injected. Therefore, even in a semiconductor element having a bonding portion made of a conductive adhesive, even if the surface temperature of the circuit board is 60 ° C. or more at the time of injection of the sealing resin, a connection failure does not occur. Provide a complete manufacturing method.

According to a second method of manufacturing a semiconductor package of the present invention, at least one semiconductor element is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is attached to the circuit board and the semiconductor element. (A) when mounting a semiconductor element face down on a circuit board having a wiring pattern, in a region other than the connection electrode portion, using a resin having an insulating property. After bonding the semiconductor element and the circuit board, (b) installing the face-down mounted circuit board in the chamber such that the bottom surface of the circuit board is in contact with the heating plate of the chamber; After depressurizing the inside of the chamber, (d) at least an inorganic material is provided around the semiconductor element so as to block a gap between the chamber and the circuit board immediately below the semiconductor element. And (e) injecting the sealing resin by increasing the pressure in the chamber, (f) returning to normal pressure, and (g) heating the sealing resin. By performing the processing, a region including the face-down mounted semiconductor element and the circuit board and a region including a side surface portion is integrally formed with a sealing resin.

In the second method of manufacturing a semiconductor package according to the present invention, it is preferable that the pressure is returned to the normal pressure after the sealing resin is sufficiently injected by repeating the processes (d) and (e). .

According to this manufacturing method, since the adhesive is reinforced with the insulating resin before the injection of the sealing resin as described above, sufficient mechanical strength of the connection portion is obtained. Therefore, even if the sealing resin is forcibly sealed using the pressure difference, the sealing resin can be injected in a very short time without causing a connection failure, and the semiconductor package can be manufactured with high productivity. Is possible. Further, in the present invention, since the capillary phenomenon is not used, the wettability between the sealing resin and the circuit board does not affect the injection property. Therefore, the range of combinations of materials constituting the semiconductor package is widened, and the provision of the semiconductor package suitable for a wider range of uses is realized.

According to a third method of manufacturing a semiconductor package of the present invention, at least one semiconductor element is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is mounted on the circuit board and the semiconductor element. (A) when mounting a semiconductor element face down on a circuit board having a wiring pattern, in a region other than the connection electrode portion, using a resin having an insulating property. After bonding the semiconductor element and the circuit board, (b) placing the face-down mounted circuit board in a mold such that the bottom surface of the circuit board is in contact with the circuit board; After heating (d), a sealing resin composed of at least an inorganic filler and a liquid thermosetting resin is injected into the mold by applying a pressure higher than the pressure in the mold, and then cured. Rukoto by, and forming integrally the region comprised between and side portions of the face-down mounting the semiconductor element and the circuit board with a sealing resin.

In the third method of manufacturing a semiconductor package according to the present invention, the mold heating temperature for curing the sealing resin is preferably in the range of 100 to 150 ° C., and the injection pressure of the sealing resin is 1 MPa. It is preferable to perform the following.

According to this manufacturing method, since the adhesive resin is bonded and reinforced by the insulating resin before the injection of the sealing resin, a sufficient mechanical strength of the connection portion is obtained. Therefore, even if the sealing resin is forcibly sealed by a high pressure, no connection failure occurs and the curing process can be performed at the same time, so that the sealing resin can be injected and cured in an extremely short time, thereby further improving productivity. It is possible to manufacture a semiconductor package having improved characteristics.

According to a fourth method of manufacturing a semiconductor package of the present invention, at least one semiconductor element is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is mounted on the circuit board and the semiconductor element. (A) when mounting a semiconductor element face down on a circuit board having a wiring pattern, in a region other than the connection electrode portion, using a resin having an insulating property. After bonding the semiconductor element and the circuit board, (b) placing the face-down mounted circuit board in a mold such that the bottom surface of the circuit board is in contact with the circuit board; A solid sealing resin containing an inorganic filler is melted by high-temperature heating, and then injected under pressure and cured, whereby the face-down mounted semiconductor element and the circuit board are cured. And forming integrally with the sealing resin region comprised between and side portions of the.

According to this manufacturing method, as described above, since the adhesive is reinforced with the insulating resin before the injection of the sealing resin, a sufficient mechanical strength of the connection portion is obtained, which is conventionally considered to be difficult. In addition, flip chip encapsulation by a transfer molding method that achieves high productivity and low cost can be realized. As a result, it is possible to provide a semiconductor package which has extremely high productivity and is manufactured at low cost without causing a connection failure.

According to a fifth method of manufacturing a semiconductor package of the present invention, at least one semiconductor is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is provided between the circuit board and the semiconductor. A method of manufacturing a semiconductor package encapsulated in a circuit board, wherein when the semiconductor is mounted face down on a circuit board having a wiring pattern, the semiconductor and the circuit board are insulative resin in a region other than the connection electrode portion. After the bonding, the inspection pins are pressed from the bottom of the circuit board to the terminals that were taken out to conduct electrical inspection of the semiconductor mounted face-down from the bottom of the circuit board until the curing of the sealing resin to be injected is completed. And performing an electrical inspection of the semiconductor.

According to this manufacturing method, as described above, since the adhesive is reinforced with the insulating resin before the injection of the sealing resin, a sufficient mechanical strength of the connection portion is obtained. In order to improve the accuracy of the electrical inspection, it is necessary to press the test pins securely to the terminals.However, if the test pins are strongly applied, the board will be distorted and mechanical shock will be applied to the connection. If sufficient mechanical strength is obtained, no new connection failure is caused. Therefore, in the present invention, it is possible to perform a stable electrical inspection before the curing of the sealing resin, it is possible to repair the defects found here,
It can contribute to improvement in yield.

In the first to third methods of manufacturing a semiconductor package of the present invention, the liquid thermosetting resin in the sealing resin is preferably at least one selected from the group consisting of an epoxy resin, a phenol resin and a polyimide resin.

In the fourth method of manufacturing a semiconductor package according to the present invention, the solid sealing resin may include at least one selected from the group consisting of epoxy resin, polyimide resin, acrylic resin, urea resin and polyurethane resin. preferable.

In the first to fourth methods of manufacturing a semiconductor package according to the present invention, the inorganic filler contained in the sealing resin may be Al ₂ O ₃ , MgO, SiC, SiO ₂ and AlN.
One or more selected from the group consisting of powders is preferable, and the sealing resin further contains one or more selected from the group consisting of a coupling agent, a dispersant, a stress relieving agent, a colorant, and a release agent. Is preferred. The content of the inorganic filler is preferably in the range of 50 to 95% by weight in the resin, and the content of the coupling agent and the like is preferably in the range of 0% to less than 10% by weight in the resin.

In the first to fifth methods of manufacturing a semiconductor package according to the present invention, it is preferable that the electrical connection in the face-down mounting of the semiconductor element is performed using a gold bump and a thermoplastic conductive adhesive. In the second to fourth methods of manufacturing a semiconductor package according to the present invention, the electrical connection in the face-down mounting of the semiconductor element may be performed using solder. Examples of the conductive adhesive include a thermoplastic resin containing 70 to 95% by weight of silver, gold, nickel, copper, and the like in the resin, and examples of the thermoplastic resin include an epoxy resin material.

In the first to fifth methods of manufacturing a semiconductor package according to the present invention, the resin having an insulating property for bonding the circuit board and the semiconductor element may be an epoxy resin, a polyimide resin, an acrylic resin, a urea resin or a polyurethane resin. One or more selected from the group is preferable, and the resin having an insulating property is further silica, titanium oxide, an oxide compound containing alumina, a nitride compound containing aluminum nitride,
It is preferable to include one or more inorganic fillers selected from the group consisting of a carbide compound containing silicon carbide and a silicon compound. The content of the inorganic filler is 30 to 95% by weight in the resin.
Is preferable.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described below based on examples.

(Embodiment 1) FIG. 1 is a cross-sectional view showing a sealing resin injecting step in a first method of manufacturing a semiconductor package according to the present invention, and FIGS. Shows the characteristics of an example of the resin material constituting the above.

In FIG. 1, reference numeral 1 denotes a semiconductor element;
Numeral denotes a bump formed on the semiconductor element, and numeral 3 denotes a conductive adhesive composed of silver powder applied to the tip of the bump 2 and a thermoplastic resin. On the other hand, 4 is a chip size package (CS
P) is a circuit board as an interposer, and a glass printed board or an aramid epoxy board, which is a normal printed board, is mainly used. 5 is the circuit board 4
Reference numeral 6 denotes a wiring and an electrode terminal formed on the back surface of the circuit board. Further, 8 is a sealing resin made of a liquid thermosetting insulating resin, and 7 is an insulating adhesive made of a thermosetting resin. Reference numeral 9 denotes a heating plate (hot plate).

The method for manufacturing a semiconductor package according to the present invention comprises:
First, a gold bump 2 is formed on a predetermined electrode terminal of the semiconductor element 1. This is generally formed by cutting a gold wire bonded by a wire bonding method and pressing down the wire to make the height constant. Thereafter, a conductive adhesive 3 is applied to the tip of the gold bump 2, and an appropriate amount of the insulating adhesive 7 is applied in advance to an appropriate position in the mounting area of the semiconductor element 1 so as not to reach the connection portion. After mounting on the surface of the substrate 4 at a position where the predetermined wiring and the electrode terminal 5 overlap, a heat treatment is performed at 120 ° C. for about 1 hour, and the conductive adhesive 3 and the insulating adhesive 7 are cured and fixed. Make electrical connections. Note that the insulating adhesive 7 may be applied to a plurality of locations as long as it does not reach the connection portion. The insulating adhesive 7 is made of epoxy resin, polyimide resin,
Acrylic resin, at least one resin selected from the group consisting of urea resin and polyurethane resin, silica, titanium oxide, an oxide compound containing alumina, a nitride compound containing aluminum nitride, a carbon compound containing silicon carbide, if necessary,
And at least one inorganic filler selected from the group consisting of silicon compounds.

Next, after injecting the sealing resin 8,
A heat treatment is performed at 50 ° C. for about one hour to cure the sealing resin 8 to produce a semiconductor package. At this time, in the step of injecting the sealing resin, the semiconductor element 1 connected to the circuit board 4 is placed on the heating plate 9, and then the heating plate 9 heats the surface of the circuit board 4 to 60 to 90 ° C. I do. this is,
This is because the heating lowers the viscosity of the sealing resin 8, increases the injection speed, and improves the productivity.

As the sealing resin, epoxy resins, phenol resins and polyimide resins which are liquid thermosetting resins at room temperature can be used, a carbon colorant for improving heat dissipation, and a small thermal expansion coefficient. Inorganic fillers such as fused silica for blending are used.

FIG. 2B shows an example of the sealing resin 8.
A graph showing the relationship between the temperature of the chip coat 8423 manufactured by Namics Corporation and the injection completion time is described. According to this, it is understood that the injection time can be shortened by setting the temperature as high as possible to around 80 ° C. On the other hand, the thermoplastic conductive adhesive 3 starts to soften when the temperature increases, and the adhesive strength is weakened. As an example, the graph of FIG. 2A shows the relationship between the bonding strength and temperature of Unimec H9807 manufactured by Namics Corporation. According to this,
At around 60 ° C., the adhesive strength approaches about 0 gf / bump, indicating that it is extremely weak to thermal and mechanical shock.

Therefore, conventionally, the injection of the sealing resin is carried out for 30 to 30 minutes.
It has to be performed at a temperature of about 40 ° C., and it takes more than 10 minutes to complete the injection, resulting in poor productivity. However, in the method of manufacturing a semiconductor package of the present invention, the semiconductor element 1 and the circuit board 4 are bonded by the insulating adhesive 7 before the step of injecting the sealing resin 8, so that a sufficient bonding strength is obtained. Even if the temperature of the surface of the circuit board 4 is set to 60 ° C. or more by heating the heating plate 9, the connection portion does not cause a connection failure. Is realized.

Therefore, the first embodiment provides a method of manufacturing a semiconductor package in which the injection of the sealing resin is completed in a short time without causing a connection failure.

(Embodiment 2) FIG. 3 is a sectional view showing a process of manufacturing a sealing resin in a second method of manufacturing a semiconductor package according to the present invention. In the figure, the same reference numerals as those in FIG. 1 indicate the same or corresponding parts. In FIG. 3, reference numeral 10 denotes a chamber, 11 denotes an exhaust port, and 12 denotes an intake port.

With such a configuration, a second method of manufacturing a semiconductor package according to the present invention will be described. As in the first embodiment, the circuit board 4 and the semiconductor element 1 that have been electrically connected are again filled with the sealing resin 8 at 150 ° C.
Heat treatment for about an hour is performed to cure the sealing resin 8 to produce a semiconductor package.

At this time, in the step of injecting the sealing resin, unlike the first embodiment, after being placed on the heating plate 9 of the chamber 10, the exhaust port 11 is opened and the pressure in the chamber 10 is reduced to a predetermined pressure. I do. Next, a sealing resin 8 is applied between the semiconductor element 1 around the semiconductor element 1 and the circuit board 4 by screen printing or a dispenser method to fill and close the gap without any gap. Thereafter, when the intake port 12 is opened and the pressure is increased to a predetermined pressure, the sealing resin 8 around the semiconductor element 1
Inject just below. At this time, when the filling amount of the sealing resin 8 is insufficient, it is sufficient to repeat the above-described procedure, that is, the sealing resin injection in the decompression chamber and the injection of the sealing resin by the pressure increase a required number of times. A large filling amount can be obtained.

As the liquid encapsulating resin, epoxy resin, phenol resin, and polyimide resin which are liquid thermosetting resins at room temperature can be used, and a carbon colorant for improving heat dissipation, a thermal expansion coefficient, and the like. And inorganic fillers such as fused silica for reducing the particle size.

Also in this embodiment, as described above, before the step of injecting the sealing resin 8, the semiconductor element having sufficient adhesive strength is obtained by the insulating adhesive 7. Thus, even if the sealing resin is sealed, the connection of the sealing resin can be performed in a very short time without causing a connection failure, so that a semiconductor package can be manufactured with high productivity. Further, in the present embodiment, since the capillary phenomenon is not used, the wettability of the sealing resin and the circuit board hardly affects the injection property. Therefore, the range of combinations of materials constituting the semiconductor package is widened, and the provision of the semiconductor package suitable for a wider range of uses is realized.

(Embodiment 3) FIG. 4 is a cross-sectional view showing a sealing resin injection and curing step in a third method of manufacturing a semiconductor package according to the present invention. In the drawings, the same reference numerals as those in FIGS. 1 to 3 indicate the same or corresponding parts. In FIG. 3, 13 is a lower mold for sealing, 14 is an upper mold for sealing, 15 is an exhaust port, and 16 is a nozzle for injecting the sealing resin 8.

With this configuration, a third method of manufacturing a semiconductor package according to the present invention will be described. After the semiconductor element 1 and the circuit board 4 which are manufactured and connected in the same manner as in the first embodiment, the circuit board 4 is positioned and held on a lower mold 13 which is processed so as to be flush with the surface of the circuit board. A mold 14 is installed. At this time, as shown in FIG.
Set so that the load is applied to the opposite side of. Further, the side surface is slightly smaller than the size of the circuit board 4, so that the sealing resin 8 is fixed between the fixing of the circuit board 4 and the upper and lower molds.
It works to suppress the flow of water. Thereby, even a circuit board which is thin and has a large warpage can be sealed. In this state, the pressure inside the cavity surrounded by the mold is reduced through the exhaust port 15. Thereafter, the liquid sealing resin 8 is injected from the nozzle 16 into the heated and evacuated upper and lower molds. Since the inside of the heated cavity has a low pressure, the sealing resin 8 is injected all over a very thin gap, and the curing is completed. The process from injection to curing can be completed in a short time of about 5 minutes. Thereafter, the cured and integrated product is taken out of the mold to form a semiconductor package.

As the liquid sealing resin, epoxy resin, phenol resin, and polyimide resin which are liquid thermosetting resins at room temperature can be used, and a carbon colorant for improving heat dissipation, a thermal expansion coefficient, and the like. And inorganic fillers such as fused silica for reducing the particle size.

Since such a sealing resin is in a liquid state, it is easy to inject, and since the mold is heated to a temperature of 100 to 150 ° C., it has a viscosity enough to be injected into a fine gap. Injection is possible at low pressure. Also, just before injecting the sealing resin into the mold, the resin, filler,
By adopting a configuration in which a curing agent or the like is mixed, storage stability of the sealing resin and an increase in viscosity during the process can be suppressed as much as possible. Thereby, a resin composition that can be cured in a short time can be realized.

The side surface of the CSP thus manufactured not only has a stable shape which is vertical in appearance,
Since the side surfaces of the semiconductor element are also protected, the reliability is good. Further, according to the method of the present embodiment, a semiconductor package can be manufactured at a significantly higher process speed than the conventional method by using a multi-cavity mold capable of simultaneously sealing a large number of the molds. Further, in the method of manufacturing a semiconductor package according to the present embodiment, there is an effect that even a resin circuit board having a large warpage can be fixed flat, and flip-chip mounting of a semiconductor element can be stably performed.

According to the above-described manufacturing method, since the adhesive is reinforced with the insulating resin before the injection of the sealing resin, a sufficient mechanical strength of the connection portion is obtained. Therefore, even if a liquid sealing resin is sealed at a high pressure, the connection from the injection of the sealing resin to the curing can be completed in a very short time without causing a connection failure.

(Embodiment 4) FIG. 5 is a sectional view showing the steps of injecting and curing a sealing resin in a fourth method of manufacturing a semiconductor package according to the present invention. In the drawings, the same reference numerals as those in FIGS. 1 to 4 indicate the same or corresponding parts. In FIG. 5, 17 is a sprue, 18 is a transfer molding material, 19 is a transfer pot, and 20 is a plunger.

With this configuration, a fourth method of manufacturing a semiconductor package according to the present invention will be described. The semiconductor element 1 and the circuit board 4 manufactured and connected in the same manner as in the first embodiment are aligned with the lower mold 13 in which the circuit board 4 is processed so as to be flush with the surface of the circuit board as in the third embodiment. Then, the upper mold 14 is set.

In this state, a transfer molding material 18 which is a resin in the form of a solid powder is heated and melted in a transfer pot 19, and is melted by a high pressure applied to a plunger 20 through a sprue 17 to a cavity surrounded by a mold. It is pumped into and cured. For molding in this case,
Since a pressure of 10 to 100 kg / cm ² is required even at a low pressure, the mechanical shock applied to the connection is large. However, in addition to the resin material having liquid characteristics used in Examples 1 to 3 as the transfer molding material 18, a solid resin material can be used as the sealing resin material. This is advantageous for cost reduction because a non-existent material (such as phenol novolak type epoxy resin) can be used. In addition, transfer molding is characterized by high productivity such that a large number of moldings can be performed in one shot, and the curing time is hardened in several seconds to several tens of seconds.

According to the above-described manufacturing method, as described above, since the adhesive is reinforced with the insulating resin before the injection of the sealing resin, sufficient mechanical strength of the connection portion is obtained. Therefore, even if the transfer molding material is pressure-fed into the mold by a very high pressure and temperature, the connection and injection of the sealing resin can be performed in a very short time without causing a connection failure, and the productivity is improved and the cost is reduced. It is possible to manufacture a simple semiconductor package.

(Embodiment 5) FIG. 6 is a sectional view showing an electrical inspection step in a fifth method of manufacturing a semiconductor package according to the present invention. In the drawings, the same reference numerals as those in FIGS. 1 to 5 indicate the same or corresponding parts. Reference numeral 21 denotes an electric inspection jig, which includes an upper holding plate 22, a lower holding plate 23, and an inspection pin 24.
It is composed of

With such a configuration, a fifth method of manufacturing a semiconductor package according to the present invention will be described. The semiconductor element 1 and the circuit board 4 manufactured and connected in the same manner as in the first embodiment are installed on the electric inspection jig 21, and the back surface of the circuit board 4 is placed in contact with the lower holding plate 23. After placing
Next, the upper holding plate 22 is brought into contact with the back surface of the semiconductor element 1. After the semiconductor element 1 and the circuit board 4 are sandwiched in this manner, the inspection pins 24 are pressed against predetermined wiring and electrode terminals 6 through the openings formed in the required portions of the lower holding plate 23. At this time, if the pressure of the inspection pin 24 to be pressed is low, the contact between the inspection pin 24 and the wiring and the electrode terminal 6 is often unstable, and the connection resistance at this portion becomes too large. In some cases, a connection resistance between the four cannot be obtained, and a highly accurate electrical test cannot be performed. Therefore, it is necessary to press the inspection pin 24 against the wiring and the electrode terminal 6 with high pressure.
The pressure is locally applied only to the area where the circuit board 4 hits, and the circuit board 4 is distorted. Due to this distortion, a mechanical shock is applied to the connection between the semiconductor element 1 and the circuit board 4. Therefore, in the conventional semiconductor package manufacturing process, a connection failure may be caused, and it is difficult to perform an electrical inspection.

However, in the present invention, since the adhesive is reinforced with the insulating resin before the electrical inspection step by the above-described manufacturing method as described above, the inspection pins 24 are connected to the circuit board 4 with high pressure.
Even if it is pressed against the wiring and the electrode terminal 5, no connection failure occurs, and a highly accurate electrical inspection can be performed. That is, in the present invention, a stable electrical inspection can be performed before the sealing resin is cured, and the defects found here can be repaired, thereby contributing to an improvement in yield.

In the second to fifth embodiments, the same effect can be obtained when the semiconductor element 1 and the circuit board 4 are electrically connected not only with the conductive adhesive 3 but also with a solder bonding layer.

[0058]

According to the method of manufacturing a semiconductor package of the present invention, by introducing a step of bonding with an insulating resin before injecting a sealing resin, sufficient thermal and mechanical strength of a connection portion can be obtained. Have been. Therefore, even in the case of a semiconductor element in which the bonding portion is made of a thermoplastic conductive adhesive, the surface temperature of the circuit board at the time of injecting the sealing resin can be 60 ° C. or higher, which is shorter than the conventional manufacturing method. The injection of the sealing resin can be completed in a short time.

In the method of manufacturing a semiconductor package according to the present invention, the encapsulating resin can be injected in a shorter time by encapsulating the encapsulating resin by utilizing the pressure difference. Can be manufactured. Further, in the manufacturing method of the present invention, since the capillary phenomenon is not used, the wettability of the sealing resin and the circuit board hardly affects the injection property. Therefore, the range of combinations of materials constituting the semiconductor package is widened, and the provision of the semiconductor package suitable for a wider range of uses is realized.

In the method of manufacturing a semiconductor package according to the present invention, the semiconductor element and the circuit board are placed in a mold heated to a high temperature, and a high-pressure liquid sealing resin is filled thereinto, so that the sealing is performed in an extremely short time. The process from injection of the resin to hardening can be completed.

Further, in the method of manufacturing a semiconductor package according to the present invention, flip chip encapsulation can be realized by a transfer molding method, which has been considered to be difficult in the past, and which achieves high productivity and low cost. A semiconductor package can be manufactured with high cost and low cost.

On the other hand, in order to improve the accuracy of the electrical inspection,
It is necessary to press the test pins securely to the terminals.
If it is strongly applied, the substrate will be distorted and a mechanical shock will be applied to the connection portion. At this time, if sufficient mechanical strength is obtained, no new connection failure will be caused. Therefore, in the semiconductor package manufacturing method of the present invention, it is possible to perform a stable electrical inspection before the sealing resin is cured,
The defect found here can be repaired, which can contribute to an improvement in yield.

As described above, according to the manufacturing method of the present invention, a semiconductor package having extremely high productivity and high reliability can be obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a sealing resin injecting step in a method for manufacturing a semiconductor package according to a first embodiment.

FIG. 2 is a characteristic diagram of an example of a resin material forming a semiconductor package according to the first embodiment.

FIG. 3 is a cross-sectional view illustrating a step of manufacturing a sealing resin in the method of manufacturing a semiconductor package according to a second embodiment.

FIG. 4 is a cross-sectional view showing a sealing resin injecting and curing step in a method for manufacturing a semiconductor package according to a third embodiment.

FIG. 5 is a cross-sectional view showing a sealing resin injecting and curing step in the method for manufacturing a semiconductor package of Example 4.

FIG. 6 is a cross-sectional view illustrating an electrical inspection step in a method for manufacturing a semiconductor package according to a fifth embodiment.

FIG. 7 is a cross-sectional view showing a sealing resin injection step in a conventional semiconductor package manufacturing method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Bump 3 Conductive adhesive 4 Circuit board 5 Wiring and electrode terminal (on the front surface) 6 Wiring and electrode terminal (on the back surface) 7 Insulating adhesive 8 Sealing resin 9 Heating plate 10 Chamber 11 Exhaust port 12 Intake Mouth 13 Lower mold for sealing 14 Upper mold for sealing 15 Exhaust port 16 Nozzle for injection of sealing resin 17 Sprue 18 Transfer molding material 19 Transfer pot 20 Plunger 21 Electrical inspection jig 22 Upper holding plate 23 Lower holding Board 24 inspection pin

Continuing on the front page (72) Inventor Seiichi Nakatani 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F term (reference) 4M109 AA01 BA04 CA04 CA10 CA21 EA01 EA02 EA07 EB06 EB08 EB09 EB12 5F047 AA17 BA33 BA34 BA51 5F06A BA04 CA04 CA10 CA21 CB02 CB12 DA16 DB01 GA03

Claims (17)

[Claims] 1. A method of manufacturing a semiconductor package in which at least one semiconductor element is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is sealed between the circuit board and the semiconductor element. And (a)
When the semiconductor element is mounted face down on a circuit board having a wiring pattern, the semiconductor element and the circuit board are bonded to each other with an insulating resin in a region other than the connection electrode portion. The down-mounted circuit board is installed such that the bottom surface of the circuit board is in contact with the heating plate, and (c) after heating the heating plate,
(D) by injecting at least an inorganic filler and a liquid thermosetting resin into the sealing resin between the semiconductor element and the circuit board by using a capillary phenomenon, followed by heat treatment to cure the resin, A method of manufacturing a semiconductor package, wherein a region including a face-down mounted semiconductor element and the circuit board and a region including a side surface portion are integrally formed with a sealing resin. 2. The method according to claim 1, wherein the heating plate is heated so that the temperature of the surface of the circuit board becomes 60 ° C. or higher. 3. A method of manufacturing a semiconductor package wherein at least one semiconductor element is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is sealed between the circuit board and the semiconductor element. And (a)
When the semiconductor element is mounted face down on a circuit board having a wiring pattern, the semiconductor element and the circuit board are bonded to each other with an insulating resin in a region other than the connection electrode portion. The down-mounted circuit board is placed in the chamber such that the bottom surface of the circuit board is in contact with the heating plate of the chamber, and (c) the inside of the chamber is depressurized. A sealing resin made of at least an inorganic filler and a liquid thermosetting resin is applied to the periphery of the semiconductor element so as to block a gap with a circuit board, and (e) the pressure of the sealing resin is increased by increasing the pressure in the chamber. (F) After that, the pressure is returned to normal pressure, and (g) this is subjected to a heat treatment, so that the side face portion between the semiconductor element mounted face-down and the circuit board is The method of manufacturing a semiconductor package, which comprises integrally formed regions with a sealing resin containing. 4. The method of manufacturing a semiconductor package according to claim 3, wherein the steps (d) and (e) are repeated to sufficiently inject the sealing resin and then return to normal pressure. 5. A method of manufacturing a semiconductor package in which at least one semiconductor element is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is sealed between the circuit board and the semiconductor element. And (a)
When the semiconductor element is mounted face down on a circuit board having a wiring pattern, the semiconductor element and the circuit board are bonded to each other with an insulating resin in a region other than the connection electrode portion. The down-mounted circuit board is placed in a mold such that the bottom surface of the circuit board is in contact with the circuit board. (C) After heating the inside of the mold, (d)
Into the mold, a sealing resin made of at least an inorganic filler and a liquid thermosetting resin is injected by applying a pressure higher than the pressure in the mold, and then cured, whereby the face-down mounted semiconductor element and A method of manufacturing a semiconductor package, comprising: forming a region including a side portion with the circuit board integrally with a sealing resin. 6. The method of manufacturing a semiconductor package according to claim 5, wherein a mold heating temperature for curing the sealing resin is in a range of 100 to 150 ° C. 7. The method of manufacturing a semiconductor package according to claim 5, wherein the injection of the sealing resin is performed at a pressure of 1 MPa or less. 8. A method of manufacturing a semiconductor package in which at least one semiconductor element is mounted face down on a wiring pattern formed on a circuit board, and a sealing resin is sealed between the circuit board and the semiconductor element. And (a)
When the semiconductor element is mounted face down on a circuit board having a wiring pattern, the semiconductor element and the circuit board are bonded to each other with an insulating resin in a region other than the connection electrode portion. The down-mounted circuit board is placed in a mold such that the bottom surface of the circuit board is in contact with the circuit board. (C) A mold obtained by melting a solid sealing resin containing an inorganic filler in the mold by high-temperature heating is added. And manufacturing the semiconductor package by pressurizing, injecting, and curing to integrally form a region including the side surface and between the face-down mounted semiconductor element and the circuit board with the sealing resin. Method. 9. The semiconductor package according to claim 1, wherein the liquid thermosetting resin in the sealing resin is at least one selected from the group consisting of an epoxy resin, a phenol resin and a polyimide resin. Production method. 10. The method of manufacturing a semiconductor package according to claim 8, wherein the solid sealing resin includes at least one selected from the group consisting of an epoxy resin, a polyimide resin, an acrylic resin, a urea resin, and a polyurethane resin. 11. An inorganic filler contained in a sealing resin is A
The method of manufacturing a semiconductor package according to claim 1, wherein the semiconductor package is at least one selected from the group consisting of l ₂ O ₃ , MgO, SiC, SiO _2, and AlN powder. 12. The sealing resin further comprises a coupling agent,
The method of manufacturing a semiconductor package according to any one of claims 1 to 11, further comprising at least one selected from the group consisting of a dispersant, a stress relieving agent, a coloring agent, and a release agent. 13. mounting at least one semiconductor face down on a wiring pattern formed on a circuit board;
A method of manufacturing a semiconductor package in which a sealing resin is sealed between the circuit board and the semiconductor, wherein when mounting the semiconductor face down on a circuit board having a wiring pattern, in a region other than the connection electrode portion, After bonding the semiconductor and the circuit board with an insulating resin, before the step of completing the curing of the sealing resin to be injected later,
A method of manufacturing a semiconductor package, wherein an inspection pin is pressed against a terminal taken out from a bottom surface of a circuit board to perform an electrical inspection of a semiconductor mounted face-down, and an electrical inspection of the semiconductor is performed. 14. The semiconductor device according to claim 1, wherein the electrical connection in the face-down mounting of the semiconductor element is performed using a gold bump and a thermoplastic conductive adhesive. A method for manufacturing a semiconductor package. 15. The method of manufacturing a semiconductor package according to claim 3, wherein the electrical connection in the face-down mounting of the semiconductor element is performed using solder. 16. The resin having an insulating property for bonding a circuit board and a semiconductor element is at least one selected from the group consisting of an epoxy resin, a polyimide resin, an acrylic resin, a urea resin and a polyurethane resin. The method for manufacturing a semiconductor package according to any one of the above items. 17. An insulating resin for bonding a circuit board and a semiconductor element, the insulating resin further comprising silica, titanium oxide, an oxide compound containing alumina, a nitride compound containing aluminum nitride, a carbide compound containing silicon carbide, and a silicon compound. The method for manufacturing a semiconductor package according to claim 1, further comprising one or more inorganic fillers selected from the group consisting of: