JP2000306858A - Manufacture of electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form an impurity-diffused layer with high dimensional accuracy, regardless of the depth of a recessed groove by patterning the surface of a substrate after filling up the recessed groove formed on the substrate with packing and flattening the packing, opening vertical grooves in the packing by using the patterned grooves as a mask, and the providing the impurity- diffused layer on the bottom of the recessed groove by using the vertical grooves as a mask. SOLUTION: After a silicon substrate 1 on which a recessed groove is formed is cleaned, the groove is filled up by applying and thermosetting an SOG2. Then the packing may be flattened by dry etching. The packing can also be flattened by the CMP. Then the flattened surface is patterned by applying a photoresist film 3 to the surface, and vertical grooves are formed to the bottom of the recessed groove by performing anisotropic dry etching through the use of the pattern as a mask. Successively, an impurity-diffused layer 5 is formed on the bottom of the recessed groove through ion implantation. Finally, the photoresist film 3 and SOG2 are removed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing an electronic component such as a semiconductor component, and more particularly to a method of manufacturing an LSI such as a bipolar transistor, a MOS transistor, an acceleration sensor, and a composite circuit.

[0002]

2. Description of the Related Art FIG. 2 shows a method for forming an impurity diffusion layer by ion implantation into the bottom of a concave groove of a silicon substrate in a conventional method for manufacturing electronic components such as semiconductor components.
Conventionally, as shown in FIG. 2, a photoresist film 7 is applied and patterned on a shallow concave groove having a depth of 1 μm or less formed in a silicon substrate 6 and then an impurity diffusion layer 8 is formed by an ion implantation process. Had formed.

[0003]

However, in the conventional impurity diffusion by ion implantation into the bottom of the concave groove, when the depth of the concave groove is 1 μm or more, the coating of the photoresist film is incomplete. Thus, there are problems such as ion implantation into a portion other than the desired portion and dimensional accuracy being different from a target as the photoresist film becomes thicker.

Accordingly, the present invention provides a method of manufacturing an electronic component capable of forming an impurity diffusion layer with high dimensional accuracy without being affected by the depth of a concave groove provided on a silicon substrate. It is in.

[0005]

According to the present invention, a concave groove on a silicon substrate is filled with a filler such as a chemical solution (SOG) mixed with a silica filler commonly used in the manufacture of semiconductors. After that, through a flattening step, patterning by photolithography is performed, and using it as a mask, an anisotropic dry etching process or the like is used to open a groove perpendicular to the filling material, and use the mask as a mask to form a concave groove. It is characterized in that an impurity diffusion layer having a target value is provided on the bottom surface.

That is, the present invention relates to a method of manufacturing an electronic component in which an impurity diffusion layer is formed on the bottom surface of a concave groove having a depth of 1 μm or more provided in a silicon substrate. After flattening the surface of the filler, after patterning a photoresist film on the surface by photolithography, etching is performed until the bottom of the concave groove is reached, thereby forming a groove perpendicular to the bottom. This is a method for manufacturing an electronic component in which an impurity diffusion layer is formed by doping an impurity by ion implantation on the entire surface or a part of the bottom surface of the formed and opened concave groove.

[0007] The present invention also relates to a method of manufacturing an electronic component, wherein SOG is filled as the filler by a spin coating method.

Further, the present invention is the above-mentioned method for manufacturing an electronic component, wherein the filling is formed by a CVD method.

Further, the present invention is the above-mentioned method for manufacturing an electronic component, wherein the surface of the filler is flattened by a wet etching process.

[0010] The present invention also relates to a method of manufacturing an electronic component, wherein the surface of the filling is flattened by a dry etching process.

The present invention also provides a method of manufacturing an electronic component, wherein the surface of the filler is flattened by a CMP method.

Further, the present invention provides the method for manufacturing an electronic component, wherein the vertical groove is formed by a wet etching process.

Further, the present invention is the above-mentioned electronic component manufacturing method, wherein the vertical groove is formed by a dry etching process.

[0014]

Embodiments of the present invention will be described below.

FIG. 1 is a sectional view schematically showing a method of forming an impurity diffusion layer on the bottom surface of a concave groove of a silicon substrate in a method of manufacturing an electronic component such as a semiconductor component according to an embodiment of the present invention. .

First, as shown in FIG. 1A, the silicon substrate 1 on which the concave grooves are formed is washed, and then the silicon substrate 1 shown in FIG.
As shown in FIG. 7, SOG2 was applied and thermally cured to fill the groove. Here, in this embodiment, SOG is used as a form for filling the groove, but a CVD film or the like may be used.

Next, the surface of the application surface of SOG2 was dry-etched and flattened as shown in FIG. Although a dry etching process is used for the planarization step, a method using CMP (chemical mechanical polishing) or the like can be used.

Next, as shown in FIG. 1D, a photoresist film 3 was applied to the flattened surface of the SOG 2 and patterned. Thereafter, anisotropic dry etching was performed using the resultant as a mask to form a vertical groove 4 reaching the bottom of the concave groove, as shown in FIG.

Next, ions were implanted from a certain surface of the photoresist film 3 to form an impurity diffusion layer 5 on the bottom surface of the concave groove as shown in FIG.

Next, the photoresist film 3 and the SOG 2 are removed from the silicon substrate 1 by wet etching, and as shown in FIG. 1G, the silicon substrate 1 having the impurity diffusion layer 5 formed on the bottom of the concave groove is formed. Could be obtained.

[0021]

As described above, according to the present invention,
It is possible to provide a method of manufacturing an electronic component that can form an impurity diffusion layer with high dimensional accuracy without being affected by the depth of a concave groove provided on a silicon substrate.

[Brief description of the drawings]

FIG. 1 is a sectional view schematically showing a method of forming an impurity diffusion layer on a silicon substrate in a method of manufacturing an electronic component according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view schematically showing a method for forming an impurity diffusion layer on a silicon substrate in a conventional method for manufacturing an electronic component.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 silicon substrate 2 SOG 3 photoresist film 4 vertical groove 5 impurity diffusion layer 6 silicon substrate 7 photoresist film 8 impurity diffusion layer

Claims (8)

[Claims] 1. A method for manufacturing an electronic component, wherein an impurity diffusion layer is formed on a bottom surface of a concave groove having a depth of 1 μm or more provided in a silicon substrate, wherein the concave groove is filled with a filling material.
After flattening the surface of the filler, after patterning a photoresist film on the surface by photolithography, etching is performed until the bottom of the concave groove is reached, thereby forming a groove perpendicular to the bottom. A method for manufacturing an electronic component, comprising doping an impurity by ion implantation on the entire surface or a part of the bottom surface of the formed and opened concave groove to form an impurity diffusion layer. 2. The method for manufacturing an electronic component according to claim 1, wherein SOG is filled as said filler by a spin coating method. 3. The method for manufacturing an electronic component according to claim 1, wherein said filling is formed by a CVD method. 4. The method for manufacturing an electronic component according to claim 2, wherein the surface of the filling is flattened by a wet etching process. 5. The method for manufacturing an electronic component according to claim 2, wherein the surface of the filling is flattened by a dry etching process. 6. The method for manufacturing an electronic component according to claim 2, wherein the surface of the filling is flattened by a CMP method. 7. The method for manufacturing an electronic component according to claim 4, wherein said vertical groove is formed by a wet etching process. 8. The method for manufacturing an electronic component according to claim 4, wherein said vertical groove is formed by a dry etching process.