JP2000301085A - Device and method for treating substrate - Google Patents
Device and method for treating substrateInfo
- Publication number
- JP2000301085A JP2000301085A JP11110480A JP11048099A JP2000301085A JP 2000301085 A JP2000301085 A JP 2000301085A JP 11110480 A JP11110480 A JP 11110480A JP 11048099 A JP11048099 A JP 11048099A JP 2000301085 A JP2000301085 A JP 2000301085A
- Authority
- JP
- Japan
- Prior art keywords
- ozone water
- substrate
- ozone
- ozonic water
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体基板、液晶表示
器用基板等のFPD(Flat PanelDispl
ay)用基板およびフォトマスク用基板などの各種の基
板をオゾン水中に浸漬させて処理する基板処理装置およ
び基板処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display (FPD) such as a semiconductor substrate or a substrate for a liquid crystal display.
The present invention relates to a substrate processing apparatus and a substrate processing method for immersing various substrates such as an ay) substrate and a photomask substrate in ozone water for processing.
【0002】[0002]
【従来の技術】硫酸と過酸化水素水との混合液中に基板
を浸漬させて、混合液中に生成されたカロー酸の酸化力
によって基板に付着したレジストなどの有機物を除去す
る方法が一般に知られている。しかしながら、この方法
によると硫酸や過酸化水素水などの薬液が高価なため半
導体素子などの製品を生産する上での生産コストが増大
したり、薬液を再利用するための設備や廃棄するための
処理設備が必要になり装置コストや設備コストが増すと
いう問題が発生する。この問題を解決するために、純水
にオゾンが溶解されたオゾン水中に基板を浸漬させ、オ
ゾン水の酸化力を用いて有機物を除去する方法が提案さ
れている。2. Description of the Related Art In general, a method of immersing a substrate in a mixed solution of sulfuric acid and hydrogen peroxide water to remove organic substances such as resist adhered to the substrate by the oxidizing power of caloic acid generated in the mixed solution. Are known. However, according to this method, a chemical solution such as sulfuric acid or hydrogen peroxide solution is expensive, so that the production cost in producing a product such as a semiconductor element increases, or equipment for reusing the chemical solution or disposal of the chemical solution is required. A problem arises in that processing equipment is required and equipment costs and equipment costs increase. In order to solve this problem, a method has been proposed in which a substrate is immersed in ozone water in which ozone is dissolved in pure water, and organic substances are removed using the oxidizing power of ozone water.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、一般に
オゾン水による酸化力は薬液による酸化力よりも弱いの
で基板に付着した有機物を十分に除去できないという問
題が発生する。本発明の目的は、上述のような点に鑑
み、オゾン水によって有機物の除去などの処理が基板に
対し十分に実行できる基板処理装置および基板処理方法
を提供することにある。However, since the oxidizing power of ozone water is generally weaker than the oxidizing power of chemicals, there is a problem that organic substances attached to the substrate cannot be sufficiently removed. An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of sufficiently performing processing such as removal of organic substances with ozone water on a substrate in view of the above points.
【0004】[0004]
【課題を解決するための手段】かかる課題を解決するた
めに、請求項1に係る発明は、オゾン水中に基板を浸漬
させて基板を処理する基板処理装置において、オゾン水
を貯留する処理槽と、処理槽に貯留されたオゾン水中で
基板を支持する支持手段と、処理槽にオゾン水を供給し
支持手段に支持された基板にオゾン水を供給する供給手
段と、供給手段によって基板に供給されるオゾン水を加
熱する加熱手段とを備えたことを特徴とする。According to a first aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate by immersing the substrate in ozone water. Supporting means for supporting the substrate in the ozone water stored in the processing tank, supply means for supplying ozone water to the processing tank and supplying ozone water to the substrate supported by the supporting means, and supply to the substrate by the supply means. And heating means for heating the ozone water.
【0005】また、請求項2に係る発明は、処理槽に貯
留されたオゾン水中に基板を浸漬させて基板を処理する
基板処理方法において、前記処理槽内に基板を導入する
導入工程と、処理槽内に導入された基板にオゾン水を供
給する供給工程と、供給工程で基板に供給されるオゾン
水を加熱する加熱工程とを含むことを特徴とする。According to a second aspect of the present invention, there is provided a substrate processing method for processing a substrate by immersing the substrate in ozone water stored in a processing tank. It is characterized by including a supply step of supplying ozone water to the substrate introduced into the tank, and a heating step of heating the ozone water supplied to the substrate in the supply step.
【0006】[0006]
【発明の実施の形態】以下、この発明の好適な実施形態
について図面を参照しながら説明する。図1はこの発明
の実施形態の一つを示す模式図である。図1において基
板洗浄装置1は、レジストなどの有機物が付着した複数
の基板をオゾン水中に浸漬させて基板から有機物を除去
するものである。基板洗浄装置1はオゾン水OLを貯留
する洗浄槽2と、洗浄槽2上部の周囲に設けられ洗浄槽
2からオーバーフローしたオゾン水OLを一旦受け止め
る外槽3とを備えている。洗浄槽2の底部付近には複数
の基板Wを支持する一対の支持部材4が配置されてい
る。支持部材4は紙面に垂直な方向に沿って延設される
とともに、この延設方向に沿って複数の溝が形成されて
いる。そして、複数の基板Wの下部端縁が一対の支持部
材4に形成された複数の溝にそれぞれ挿入されて、複数
の基板Wが紙面に垂直な方向に沿って互いに平行に洗浄
槽2内で配列される。Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing one embodiment of the present invention. In FIG. 1, a substrate cleaning apparatus 1 removes organic substances from a substrate by immersing a plurality of substrates to which organic substances such as resist are attached in ozone water. The substrate cleaning apparatus 1 includes a cleaning tank 2 for storing ozone water OL, and an outer tank 3 provided around the upper part of the cleaning tank 2 for temporarily receiving the ozone water OL overflowing from the cleaning tank 2. A pair of support members 4 that support a plurality of substrates W are arranged near the bottom of the cleaning tank 2. The support member 4 extends in a direction perpendicular to the plane of the paper, and has a plurality of grooves formed in the extending direction. Then, lower edges of the plurality of substrates W are inserted into a plurality of grooves formed in the pair of support members 4, respectively, so that the plurality of substrates W are parallel to each other in the cleaning tank 2 along a direction perpendicular to the paper surface. Are arranged.
【0007】洗浄槽2にはオゾン水供給管L3が流路接
続されている。オゾン水供給管L3は洗浄槽2内に設け
られた図示しない液中パイプに流路接続され、オゾン水
供給管L3および液中パイプを介して洗浄槽2内にオゾ
ン水OLが供給される。オゾン水供給管L3にはオゾン
水生成部5およびオゾン水加熱部6などがそれぞれ介設
されている。An ozone water supply pipe L3 is connected to the cleaning tank 2 in a flow path. The ozone water supply pipe L3 is connected to a submerged pipe (not shown) provided in the cleaning tank 2, and the ozone water OL is supplied into the cleaning tank 2 via the ozone water supply pipe L3 and the submerged pipe. The ozone water supply pipe L3 is provided with an ozone water generation section 5, an ozone water heating section 6, and the like.
【0008】オゾン水生成部5には半導体素子製造工場
などの工場設備として設けられた純水供給源WSと流路
接続された純水供給管L1と、工場設備であるオゾン供
給源OSと流路接続されたオゾン供給管L2とがそれぞ
れ流路接続されている。オゾン水生成部5は、その内部
に供給された純水とオゾンとを混合し純水中にオゾンを
溶解させてオゾン水を生成する。このオゾン水生成部5
は基板洗浄装置1内に設けても良いし、工場設備として
オゾン水生成設備が設けられている場合は基板洗浄装置
1内に設けなくても良い。オゾン水生成部5で生成され
たオゾン水は、純水供給源WSからオゾン水生成部5に
圧送される純水の圧力によってオゾン水供給管L3およ
びオゾン水加熱部6を介して洗浄槽2まで圧送される。
また、排液管L4は外槽3に貯留されたオゾン水OLを
外槽3外に排液する配管である。The ozone water generator 5 is connected to a pure water supply pipe L1 connected to a pure water supply source WS provided as factory equipment such as a semiconductor device manufacturing factory, and an ozone supply source OS as factory equipment. The channel-connected ozone supply pipes L2 are connected to the respective channels. The ozone water generation unit 5 mixes pure water and ozone supplied therein and dissolves ozone in the pure water to generate ozone water. This ozone water generator 5
May be provided in the substrate cleaning apparatus 1, or may not be provided in the substrate cleaning apparatus 1 when ozone water generation equipment is provided as factory equipment. The ozone water generated by the ozone water generation unit 5 is supplied to the cleaning tank 2 via the ozone water supply pipe L3 and the ozone water heating unit 6 by the pressure of the pure water sent from the pure water supply source WS to the ozone water generation unit 5 under pressure. Pumped up to.
The drain pipe L4 is a pipe for draining the ozone water OL stored in the outer tank 3 to the outside of the outer tank 3.
【0009】オゾン水加熱部6はその内部に供給された
例えば約20℃から約25℃の範囲内にあるオゾン水を
例えば3℃から60℃だけ昇温し、約23℃から約85
℃の範囲内まで加熱する。図2はオゾン水加熱部6を示
す模式図である。オゾン水加熱部6は略箱型のケース本
体61を有し、ケース本体61にはオゾン水供給管L3
とそれぞれ流路接続された流入口62および流出口63
が形成されている。ケース本体61内には円筒状の3本
のランプヒータ64,65,66が互い違いに設けられ
ている。各ランプヒータ64,65,66は、石英管G
1,G2,G3と各石英管G1,G2,G3内にそれぞ
れ挿入された赤外線ランプH1,H2,H3とから構成
されている。ランプヒータ64,65,66のそれぞれ
の電極部には電源67に電気的に接続された配線68が
それぞれ電気的に接続されている。オゾン水加熱部6で
加熱されたオゾン水の温度はオゾン水加熱部6のケース
本体61内またはオゾン水加熱部6と洗浄槽2とを流路
接続するオゾン水供給管L3に介設された図示しない温
度センサによって検出され、その検出結果が電源67に
フィードバックされる。検出結果がフィードバックされ
た電源67は、ランプヒータ64,65,66に供給す
る電力を制御することにより、オゾン水を加熱する温度
を調整しオゾン水の温度を変更する。The ozone water heating section 6 raises the temperature of the ozone water supplied, for example, within a range of about 20 ° C. to about 25 ° C. by, for example, 3 ° C. to 60 ° C., and increases the temperature by about 23 ° C. to about 85 ° C.
Heat to within ° C. FIG. 2 is a schematic diagram showing the ozone water heating unit 6. The ozone water heating unit 6 has a substantially box-shaped case body 61, and the case body 61 has an ozone water supply pipe L3.
Inlet 62 and outlet 63 respectively connected to the flow path
Are formed. Three cylindrical lamp heaters 64, 65, 66 are provided alternately in the case main body 61. Each of the lamp heaters 64, 65, 66 is a quartz tube G
1, G2, G3 and infrared lamps H1, H2, H3 inserted into the respective quartz tubes G1, G2, G3. Wirings 68 electrically connected to a power supply 67 are electrically connected to the respective electrode portions of the lamp heaters 64, 65, 66. The temperature of the ozone water heated by the ozone water heating unit 6 is provided in the case main body 61 of the ozone water heating unit 6 or an ozone water supply pipe L3 that connects the ozone water heating unit 6 and the cleaning tank 2 in a flow path. The temperature is detected by a temperature sensor (not shown), and the detection result is fed back to the power supply 67. The power supply 67 to which the detection result is fed back controls the power supplied to the lamp heaters 64, 65, and 66 to adjust the temperature for heating the ozone water and change the temperature of the ozone water.
【0010】次に、上述の基板洗浄装置1の動作につい
て説明する。複数の基板Wは図示しない搬送ロボットに
よって洗浄槽2内に配置された一対の支持部材4に受け
渡されて洗浄槽2内に導入される。このとき洗浄槽2内
にはオゾン水OLまたは純水が満たされていても良い
し、何も満たされていない空の状態でも良い。また、オ
ゾン水生成部5では、純水供給源WSからの圧力により
純水供給管L1を介して供給された純水とオゾン供給源
OSからオゾン供給管L2を介して供給されたオゾンと
が混合され、オゾンが純水に溶解されてオゾン水が生成
される。オゾン水生成部5で生成されたオゾン水は、オ
ゾン水供給管L3を介してオゾン水加熱部6に圧送され
る。オゾン水加熱部6に圧送されケース本体61内を流
れる例えば約20℃から約25℃の範囲内にあるオゾン
水は、ランプヒータ64,65,66によって例えば約
23℃から約80℃まで加熱される。加熱されたオゾン
水はオゾン水供給管L3および図示しない液中パイプを
介して洗浄槽2内に圧送され、一対の支持部材4に支持
された複数の基板Wにそれぞれ供給される。Next, the operation of the above-described substrate cleaning apparatus 1 will be described. The plurality of substrates W are transferred to a pair of support members 4 arranged in the cleaning tank 2 by a transfer robot (not shown) and introduced into the cleaning tank 2. At this time, the cleaning tank 2 may be filled with ozone water OL or pure water, or may be empty without any filling. Further, in the ozone water generator 5, pure water supplied through the pure water supply pipe L1 by pressure from the pure water supply source WS and ozone supplied from the ozone supply source OS through the ozone supply pipe L2 are mixed. After mixing, ozone is dissolved in pure water to produce ozone water. The ozone water generated by the ozone water generation unit 5 is pressure-fed to the ozone water heating unit 6 via the ozone water supply pipe L3. The ozone water, for example, within the range of about 20 ° C. to about 25 ° C., which is pressure-fed to the ozone water heating unit 6 and flows in the case body 61, is heated by the lamp heaters 64, 65, 66 to, for example, about 23 ° C. to about 80 ° C. You. The heated ozone water is pumped into the cleaning tank 2 via an ozone water supply pipe L3 and a not-shown submerged pipe, and is supplied to a plurality of substrates W supported by the pair of support members 4, respectively.
【0011】オゾン水加熱部6内で加熱されたオゾン水
中ではオゾン(O3)の分解が急速に進行し、その結
果、オゾン水中の活性酸素(O)濃度が高くなる。この
活性酸素(O)はオゾン(O3)と比べて酸化力が強い
のでオゾン水の酸化力が強まる。この酸化力が強まった
オゾン水が洗浄槽2に供給されることにより、洗浄槽2
に貯留されたオゾン水OL中の活性酸素濃度が高まりオ
ゾン水OLの酸化力が強まる。この酸化力が強まったオ
ゾン水OLが複数の基板Wに供給されて、オゾン水の酸
化力により複数の基板Wに付着したレジストなどの有機
物が十分に除去される。オゾン水中の活性酸素は不安定
でその寿命が短いので、加熱されたオゾン水はできるだ
け速く、例えばオゾン水加熱部6で加熱された後、10
秒以内に基板Wに供給した方が良い。できるだけ速くオ
ゾン水を基板Wに供給するためにオゾン水加熱部6を洗
浄槽2に近接させて配置し、オゾン水加熱部6と洗浄槽
2とを流路接続するオゾン水供給管L3の長さ寸法を例
えば3m以内と短く設定することが好ましい。In the ozone water heated in the ozone water heating section 6, the decomposition of ozone (O 3 ) proceeds rapidly, and as a result, the active oxygen (O) concentration in the ozone water increases. Since the active oxygen (O) has a stronger oxidizing power than ozone (O 3 ), the oxidizing power of the ozone water is increased. The oxidized ozone water is supplied to the cleaning tank 2 so that the cleaning tank 2
The active oxygen concentration in the ozone water OL stored in the tank increases, and the oxidizing power of the ozone water OL increases. The oxidized ozone water OL is supplied to the plurality of substrates W, and the oxidizing power of the ozone water sufficiently removes organic substances such as resist adhered to the plurality of substrates W. Since the active oxygen in the ozone water is unstable and has a short life, the heated ozone water is heated as quickly as possible.
It is better to supply the substrate W within seconds. In order to supply the ozone water to the substrate W as quickly as possible, the ozone water heating unit 6 is disposed close to the cleaning tank 2, and the length of the ozone water supply pipe L3 that connects the ozone water heating unit 6 and the cleaning tank 2 to each other is connected. It is preferable that the length is set as short as 3 m or less, for example.
【0012】洗浄槽2内にオゾン水供給管L3からオゾ
ン水が供給されるに連れて、洗浄槽2の上端からオゾン
水OLがオーバーフローする。このとき、洗浄槽2内に
貯留されたオゾン水OLには上向きの流れが発生し、こ
の上昇流によって効率よく基板Wに付着した有機物など
を除去できる。洗浄槽2からオーバーフローしたオゾン
水は外槽3に一旦受け止められた後、排液管L4によっ
て排液される。排液管L4によって排液されたオゾン水
は基板洗浄装置1外に排液する構成としても良いし、オ
ゾン水供給管L3などに供給して洗浄槽2にオゾン水を
循環供給する構成としても良い。洗浄槽2内に貯留され
たオゾン水OL中に浸漬され所定時間経過し洗浄処理を
終えた複数の基板Wは図示しない搬送ロボットによって
洗浄槽2外に搬出される。As the ozone water is supplied from the ozone water supply pipe L3 into the cleaning tank 2, the ozone water OL overflows from the upper end of the cleaning tank 2. At this time, an upward flow is generated in the ozone water OL stored in the cleaning tank 2, and the upward flow can efficiently remove organic substances and the like attached to the substrate W. The ozone water overflowing from the washing tank 2 is once received by the outer tank 3 and then drained by a drain pipe L4. The ozone water drained by the drain pipe L4 may be drained out of the substrate cleaning apparatus 1, or may be supplied to the ozone water supply pipe L3 or the like to circulate and supply the ozone water to the cleaning tank 2. good. The plurality of substrates W that have been immersed in the ozone water OL stored in the cleaning tank 2 and have been subjected to the cleaning process after a lapse of a predetermined time and have finished the cleaning processing are carried out of the cleaning tank 2 by a transfer robot (not shown).
【0013】上述の実施形態においては、洗浄槽12に
供給される前のオゾン水を加熱する構成としたが、この
構成に代えて洗浄槽12に貯留されたオゾン水OLを加
熱する構成としても良い。具体的には洗浄槽12の周囲
に加熱ヒータなどの加熱手段を設け、この加熱手段によ
って洗浄槽12を加熱して洗浄槽12に貯留されたオゾ
ン水OLを加熱する。オゾン水OLは加熱されることに
より活性酸素濃度が高まりオゾン水OLの酸化力が強く
なる。ここで、洗浄槽12に貯留されたオゾン水OLは
有機物の除去に寄与して疲労したオゾン水とオゾン水供
給管L3から供給された新鮮なオゾン水との混合液であ
るため、新鮮なオゾン水と比べてそのオゾン濃度が低下
している。このようにオゾン濃度が低いオゾン水OLを
加熱する構成では、オゾン濃度が高い新鮮なオゾン水の
みを加熱する上述の実施形態(図1参照)と比較してオ
ゾン水中での活性酸素の発生が緩慢に進行する。したが
って、短時間で十分な活性酸素濃度を得られるという点
では図1に示す実施形態が好ましい。In the above embodiment, the ozone water before being supplied to the cleaning tank 12 is heated, but instead of this configuration, the ozone water OL stored in the cleaning tank 12 may be heated. good. Specifically, a heating means such as a heater is provided around the cleaning tank 12, and the heating means heats the cleaning tank 12 to heat the ozone water OL stored in the cleaning tank 12. When the ozone water OL is heated, the active oxygen concentration increases and the oxidizing power of the ozone water OL increases. Here, the ozone water OL stored in the cleaning tank 12 is a mixed liquid of ozone water that has contributed to the removal of organic substances and has been fatigued and fresh ozone water supplied from the ozone water supply pipe L3. Its ozone concentration is lower than that of water. In the configuration in which the ozone water OL having a low ozone concentration is heated as described above, generation of active oxygen in the ozone water is smaller than that in the above-described embodiment (see FIG. 1) in which only the fresh ozone water having a high ozone concentration is heated. Progress slowly. Therefore, the embodiment shown in FIG. 1 is preferable in that a sufficient active oxygen concentration can be obtained in a short time.
【0014】上述の実施形態においてオゾン水加熱部6
は、図2に示すように加熱源として複数のランプヒータ
64,65,66を用いる構成であるが、ランプヒータ
に代えて加熱源として電磁式の加熱源やニクロム線など
を用いる構成でも良い。また、図1に示すオゾン水供給
管L3に、オゾン水を洗浄槽2に向けて圧送するポン
プ、洗浄槽2に供給されるオゾン水を清浄するフィル
タ、オゾン水供給管L3を開閉してオゾン水を洗浄槽2
に供給するタイミングを制御する開閉弁などを介設させ
ても良い。さらに、上述の実施形態は基板を洗浄処理す
るものであるが、本発明は洗浄処理に限定されるもので
はなく、例えば基板の表面上に自然酸化膜を形成する処
理などオゾン水の酸化力を用いて基板を処理するもので
あれば本発明を適用することができる。In the above embodiment, the ozone water heating unit 6
Has a configuration in which a plurality of lamp heaters 64, 65, and 66 are used as a heating source as shown in FIG. 2, but a configuration in which an electromagnetic heating source, a nichrome wire, or the like is used as a heating source instead of the lamp heater may be used. Also, a pump for pumping ozone water toward the cleaning tank 2 to the ozone water supply pipe L3 shown in FIG. 1, a filter for purifying ozone water supplied to the cleaning tank 2, and an ozone water supply pipe L3 for opening and closing the ozone water supply pipe L3. Water washing tank 2
An on-off valve or the like for controlling the timing of supply to the power supply may be provided. Further, in the above embodiment, the substrate is cleaned, but the present invention is not limited to the cleaning process. For example, the oxidizing power of ozone water such as a process of forming a natural oxide film on the surface of the substrate is reduced. The present invention can be applied as long as the substrate is processed by using the method.
【0015】[0015]
【発明の効果】以上詳細に説明した如く、請求項1また
は請求項2に係る発明によれば、処理槽内の基板に供給
されるオゾン水が加熱されることによって、基板に供給
されるオゾン水中の活性酸素濃度が高ってオゾン水の酸
化力が強くなる。この酸化力の強まったオゾン水により
基板に付着した有機物を除去するなどの基板に対する処
理を十分に実行することができる。As described in detail above, according to the first or second aspect of the present invention, the ozone water supplied to the substrate is heated by heating the ozone water supplied to the substrate in the processing tank. The concentration of active oxygen in the water increases and the oxidizing power of the ozone water increases. Substrate processing such as removal of organic substances attached to the substrate with the oxidized ozone water can be sufficiently performed.
【図1】この発明の実施形態の一つを示す模式図であ
る。FIG. 1 is a schematic diagram showing one embodiment of the present invention.
【図2】図1に示す実施形態のオゾン水加熱部を示す模
式図である。FIG. 2 is a schematic diagram showing an ozone water heating unit of the embodiment shown in FIG.
1 基板洗浄装置 2 洗浄槽 4 支持部材 6 オゾン水加熱部 L3 オゾン水供給管 64、65,66 ランプヒータ DESCRIPTION OF SYMBOLS 1 Substrate cleaning apparatus 2 Cleaning tank 4 Support member 6 Ozone water heating part L3 Ozone water supply pipe 64, 65, 66 Lamp heater
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/304 642 H01L 21/304 647Z 647 648K 648 21/30 572B ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/304 642 H01L 21/304 647Z 647 648K 648 21/30 572B
Claims (2)
する基板処理装置において、 オゾン水を貯留する処理槽と、 処理槽に貯留されたオゾン水中で基板を支持する支持手
段と、 処理槽にオゾン水を供給し支持手段に支持された基板に
オゾン水を供給する供給手段と、 供給手段によって基板に供給されるオゾン水を加熱する
加熱手段と、を備えたことを特徴とする基板処理装置。1. A substrate processing apparatus for processing a substrate by immersing the substrate in ozone water, comprising: a processing tank for storing ozone water; support means for supporting the substrate in the ozone water stored in the processing tank; Substrate processing, comprising: supply means for supplying ozone water to the substrate and supplying ozone water to the substrate supported by the support means; and heating means for heating the ozone water supplied to the substrate by the supply means. apparatus.
漬させて基板を処理する基板処理方法において、 前記処理槽内に基板を導入する導入工程と、 処理槽内に導入された基板にオゾン水を供給する供給工
程と、 供給工程で基板に供給されるオゾン水を加熱する加熱工
程と、を含むことを特徴とする基板処理方法。2. A substrate processing method for processing a substrate by immersing the substrate in ozone water stored in a processing bath, comprising: introducing an substrate into the processing bath; A substrate processing method comprising: a supply step of supplying ozone water; and a heating step of heating ozone water supplied to the substrate in the supply step.
Priority Applications (1)
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JP11110480A JP2000301085A (en) | 1999-04-19 | 1999-04-19 | Device and method for treating substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11110480A JP2000301085A (en) | 1999-04-19 | 1999-04-19 | Device and method for treating substrate |
Publications (1)
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Family
ID=14536798
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JP11110480A Pending JP2000301085A (en) | 1999-04-19 | 1999-04-19 | Device and method for treating substrate |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003043751A1 (en) * | 2001-11-21 | 2003-05-30 | Agency For Science, Technology And Research | An apparatus and method for cleaning glass substrates using a cool hydrogen flame |
CN110718448A (en) * | 2018-07-11 | 2020-01-21 | 胜高股份有限公司 | Method for cleaning semiconductor wafer and method for manufacturing semiconductor wafer using the same |
-
1999
- 1999-04-19 JP JP11110480A patent/JP2000301085A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003043751A1 (en) * | 2001-11-21 | 2003-05-30 | Agency For Science, Technology And Research | An apparatus and method for cleaning glass substrates using a cool hydrogen flame |
CN110718448A (en) * | 2018-07-11 | 2020-01-21 | 胜高股份有限公司 | Method for cleaning semiconductor wafer and method for manufacturing semiconductor wafer using the same |
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