JP2000290468A - Die attach paste for semiconductor - Google Patents

Die attach paste for semiconductor

Info

Publication number
JP2000290468A
JP2000290468A JP11101924A JP10192499A JP2000290468A JP 2000290468 A JP2000290468 A JP 2000290468A JP 11101924 A JP11101924 A JP 11101924A JP 10192499 A JP10192499 A JP 10192499A JP 2000290468 A JP2000290468 A JP 2000290468A
Authority
JP
Japan
Prior art keywords
resin
weight
paste
epoxy resin
viscosity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11101924A
Other languages
Japanese (ja)
Other versions
JP3482153B2 (en
Inventor
Toshiro Takeda
敏郎 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP10192499A priority Critical patent/JP3482153B2/en
Publication of JP2000290468A publication Critical patent/JP2000290468A/en
Application granted granted Critical
Publication of JP3482153B2 publication Critical patent/JP3482153B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Paints Or Removers (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a resin paste not causing characteristic inferiority due to chip crack and warp even in a combination of a large-sized chip such as an IC and a copper frame, and capable of rapidly being cured and imparting a void-free cured product by lowering the elasticity of a cured product without lowering the adhesive strength while hot. SOLUTION: This die attach paste comprises a liquid epoxy resin in a liquid state at room temperature, a polycarbodiimide resin, a latently curing agent, an imidazole compound and an inorganic filler. The liquid epoxy resin of 100 pts.wt. is formulated with the polycarbodiimide resin of 1-30 pts.wt.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はIC、LSI等の半
導体素子を金属フレーム、有機基板等に接着する樹脂ペ
ーストに関するものである。
The present invention relates to a resin paste for bonding a semiconductor element such as an IC or an LSI to a metal frame, an organic substrate or the like.

【0002】[0002]

【従来の技術】エレクトロニクス業界の最近の著しい発
展により、トランジスター、IC、LSI、超LSIと進化して
きており、これら半導体素子に於ける回路の集積度が急
激に増大すると共に大量生産が可能となり、これらを用
いた半導体製品の普及に伴って、その量産に於ける作業
性の向上並びにコストダウンが重要な問題となってき
た。従来は半導体素子を金属フレームなどの導体にAu-S
i共晶法により接合し、次いでハーメチックシールによ
って封止して、半導体製品とするのが普通であった。し
かし量産時の作業性、コストの面より、樹脂封止法が開
発され、現在は一般化されている。これに伴い、マウン
ト工程に於けるAu-Si共晶法の改良としてハンダ材料や
樹脂ペースト即ちマウント用樹脂による方法が取り上げ
られるようになった。
2. Description of the Related Art Recent remarkable developments in the electronics industry have evolved into transistors, ICs, LSIs, and ultra-LSIs. The integration of circuits in these semiconductor devices has rapidly increased, and mass production has become possible. With the spread of semiconductor products using these, improvement in workability and cost reduction in mass production have become important issues. Conventionally, semiconductor elements were replaced with Au-S
In general, they were joined by an eutectic method and then sealed by a hermetic seal to obtain a semiconductor product. However, in view of workability and cost during mass production, a resin encapsulation method has been developed and is now generally used. Along with this, a method using a solder material or a resin paste, that is, a mounting resin has come to be taken up as an improvement of the Au-Si eutectic method in the mounting step.

【0003】しかし、ハンダ法では信頼性が低いこと、
素子の電極の汚染を起こし易いこと等が欠点とされ、高
熱伝導性を要するパワートランジスター、パワーICの素
子に使用が限られている。これに対しマウント用樹脂は
ハンダ法に較べ、作業性に於いても信頼性等に於いても
優れており、その需要が急激に増大している。
However, the solder method has low reliability,
The disadvantage is that the electrodes of the element are liable to be contaminated, and the use thereof is limited to power transistors and power IC elements that require high thermal conductivity. On the other hand, the mounting resin is superior in workability and reliability as compared with the soldering method, and the demand thereof is rapidly increasing.

【0004】更に近年、IC等の集積度の高密度化によ
り、チップが大型化してきており、一方従来用いられて
きたリードフレームである42合金フレームが高価なこと
より、コストダウンの目的から銅フレームが用いられる
ようになってきた。ここでIC等のチップの大きさが約4
〜5mm角より大きくなると、IC等の組立工程での加熱に
より、マウント法としてAu-Si共晶法を用いると、チッ
プの熱膨張率と銅フレームの熱膨張率との差からチップ
のクラックや反りによる特性不良が問題となってきてい
る。
Further, in recent years, the chip has been increased in size due to the increase in the degree of integration of ICs and the like. On the other hand, since the 42 alloy frame, which has been conventionally used, is expensive, copper is used for cost reduction purposes. Frames have come to be used. Here, the size of the chip such as IC is about 4
When the size is larger than ~ 5 mm square, chip cracking or cracking may occur due to the difference between the coefficient of thermal expansion of the chip and the coefficient of thermal expansion of the copper frame when Au-Si eutectic method is used as the mounting method due to heating during the assembly process of ICs and the like. Defective characteristics due to warpage have become a problem.

【0005】即ちこれは、チップの材料であるシリコン
等の熱膨張率が3×10-6/℃であるのに対し、42合金フレ
ームでは8×10-6/℃であるが、銅フレームでは20×10-6
/℃と大きくなる為である。これに対し、マウント法と
してマウント用樹脂を用いることが考えられるが、従来
のエポキシ樹脂系ペーストでは、熱硬化性樹脂で三次元
硬化する為、弾性率が高く、チップと銅フレームとの歪
を吸収するには至らなかった。
That is, the thermal expansion coefficient of silicon or the like as a chip material is 3 × 10 −6 / ° C., whereas that of a 42 alloy frame is 8 × 10 −6 / ° C. 20 × 10 -6
/ ° C. On the other hand, it is conceivable to use a mounting resin as the mounting method.However, with a conventional epoxy resin-based paste, since the thermosetting resin is three-dimensionally cured, the elastic modulus is high, and the distortion between the chip and the copper frame is reduced. Did not absorb.

【0006】また、硬化時に架橋密度を小さくするよう
なエポキシ樹脂、例えばエポキシモノマーを多量に含む
ものを使用すれば弾性率を低くできるが、接着強度が低
下するという欠点があった。更に通常のエポキシ樹脂は
粘度が高く、これに無機フィラーを配合すると粘度が高
くなりすぎ、ディスペンス時の糸ひきが発生し作業性が
悪くなる。
If an epoxy resin which reduces the crosslink density during curing, for example, a resin containing a large amount of an epoxy monomer, is used, the modulus of elasticity can be lowered, but there is a disadvantage that the adhesive strength is reduced. Furthermore, a normal epoxy resin has a high viscosity, and if an inorganic filler is added thereto, the viscosity becomes too high, and threading occurs during dispensing, resulting in poor workability.

【0007】作業性を改良するために多量の溶剤を添加
するとボイドが発生するという問題があった。また従来
のマウント用樹脂は硬化に150〜200℃のオーブンで1〜2
時間加熱処理する必要があった。最近では半導体組立工
程の合理化のため、オーブンで30分以内に硬化するイ
ンライン化の要求が高まっている。速硬化にするために
は、硬化促進剤を多量に添加する方法があるが、常温ま
たは低温での保存性、すなわちポットライフやシェルラ
イフが短くなり、1液タイプでは実用性がなく、熱時の
接着強度も低いという欠点があった。
When a large amount of solvent is added to improve workability, there is a problem that voids are generated. In addition, conventional mounting resins are cured in an oven at 150-200 ° C for 1-2
It was necessary to heat for hours. Recently, there has been an increasing demand for in-line curing in an oven within 30 minutes in order to streamline the semiconductor assembly process. To achieve fast curing, there is a method of adding a large amount of a curing accelerator, but the shelf life at room temperature or low temperature, that is, the pot life and shell life is shortened, and the one-pack type is not practical and Had a disadvantage that the adhesive strength was low.

【0008】[0008]

【発明が解決しようとする課題】本発明の目的は、熱時
接着強度を低下させないで、硬化物の低弾性率化を計る
ことにより、IC等の大型チップと銅フレーム等の組合
せでもチップクラックや反りによるIC等の特性不良が
起こらず、速硬化でかつボイドの発生のない樹脂ペース
トを提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to reduce the modulus of elasticity of a cured product without lowering the adhesive strength when hot, and to achieve chip cracking even in a combination of a large chip such as an IC and a copper frame. It is an object of the present invention to provide a resin paste which does not cause characteristic defects such as IC due to warpage and which is fast-cured and free from voids.

【0009】[0009]

【課題を解決するための手段】本発明は(A)室温で液
体である液状エポキシ樹脂、(B)ポリカルボジイミド
樹脂、(C)潜在性硬化剤、(D)イミダゾール化合
物、(E)無機フィラーを必須成分とし、成分(A)1
00重量部に対し、成分(B)が1〜30重量部、成分
(E)が成分(A)、(B)、(C)、(D)の合計1
00重量部に対して10〜400重量部であるダイアタ
ッチペーストである。
The present invention provides (A) a liquid epoxy resin which is liquid at room temperature, (B) a polycarbodiimide resin, (C) a latent curing agent, (D) an imidazole compound, and (E) an inorganic filler. As an essential component, and component (A) 1
Component (B) is 1 to 30 parts by weight, and component (E) is component (A), (B), (C), and (D) in total of 1 part by weight based on 00 parts by weight.
The die attach paste is 10 to 400 parts by weight with respect to 00 parts by weight.

【0010】本発明に用いる液状エポキシ樹脂(A)は
配合するときの作業性及び配合後の粘度の点から液状が
好ましいが特に制限を受けるものではない。一般的に用
いられるものの例を挙げるとビスフェノールA、ビスフ
ェノールF、ビスフェノールE、ビフェノールなどのビ
スフェノール化合物のジグリシジルエーテルやブタンジ
オールジグリシジルエーテル、ネオペンチルグリコール
ジグリシジルエーテル等の脂肪族エポキシ、ジグリシジ
ルヒダントイン等の複素環式エポキシ、ビニルシクロヘ
キセンジオキサイド、ジシクロペンタジエンジオキサイ
ド、アリサイクリックジエポキシーアジペイトのような
脂環式エポキシがあり、これらの内の1種類あるいは複
数種と併用も可能である。
The liquid epoxy resin (A) used in the present invention is preferably a liquid in view of workability at the time of compounding and viscosity after compounding, but is not particularly limited. Examples of those generally used include aliphatic epoxies such as diglycidyl ethers of bisphenol compounds such as bisphenol A, bisphenol F, bisphenol E and biphenol, butanediol diglycidyl ether, and neopentyl glycol diglycidyl ether, and diglycidyl hydantoin. Alicyclic epoxies such as heterocyclic epoxies, vinylcyclohexene dioxide, dicyclopentadiene dioxide, and alicyclic diepoxy-adipate, and can be used in combination with one or more of these. .

【0011】本発明に用いられるポリカルボジイミド樹
脂(B)はイソシアネートの脱炭酸反応により得られる
樹脂である。エポキシ樹脂に配合することによって硬化
物の脆さを改善し、耐熱性と接着性を大幅に改良するこ
とが出来る。ポリカルボジイミド樹脂の添加量は成分
(A)100重量部に対して1〜30重量部が望まし
い。1重量部未満では接着性向上効果に乏しく、30重
量部を越えると硬化速度を低下させたり、粘度が高くな
りすぎ作業性を低下させるので好ましくない。
The polycarbodiimide resin (B) used in the present invention is a resin obtained by a decarboxylation reaction of isocyanate. By blending with an epoxy resin, the brittleness of the cured product can be improved, and the heat resistance and adhesiveness can be significantly improved. The addition amount of the polycarbodiimide resin is preferably 1 to 30 parts by weight based on 100 parts by weight of the component (A). If the amount is less than 1 part by weight, the effect of improving the adhesiveness is poor, and if it exceeds 30 parts by weight, the curing speed is lowered or the viscosity becomes too high, and the workability is undesirably lowered.

【0012】本発明に用いる潜在性硬化剤(C)はエポ
キシ樹脂の硬化剤として用いられ、例えばアジピン酸ジ
ヒドラジド、ドデカン酸ジヒドラジド、イソフタル酸ジ
ヒドラジド、P-オキシ安息香酸ジヒドラジド等のカルボ
ン酸ジヒドラジドやジシアンジアミド等の潜在性硬化剤
である。潜在性硬化剤を用いるとフェノール硬化剤単独
で硬化した場合に比べ著しく熱時接着強度が高くなる。
又潜在性硬化剤はフェノール硬化剤よりも当量が小さい
ため、併用することにより粘度がそれ程高くなく、又潜
在性であるため保存性にも優れたペーストを得ることが
できる。潜在性硬化剤(C)の配合量は全エポキシ樹脂に
対し、0.5〜5重量%使用するのが好ましい。0.5重量%
未満では熱時接着強度が弱く、5重量%を越えると低応
力性が低下する。
The latent curing agent (C) used in the present invention is used as a curing agent for epoxy resins. And latent curing agents. When a latent curing agent is used, the adhesive strength when heated becomes significantly higher than when cured with a phenol curing agent alone.
Further, since the latent curing agent has a smaller equivalent weight than the phenol curing agent, it is possible to obtain a paste which is not so high in viscosity when used in combination and which has excellent preservability due to the latent curing agent. The compounding amount of the latent curing agent (C) is preferably 0.5 to 5% by weight based on the entire epoxy resin. 0.5% by weight
If it is less than 5%, the adhesive strength upon heating is weak, and if it exceeds 5% by weight, the low stress property is reduced.

【0013】本発明においては,速硬化を可能とするた
めイミダゾール化合物(E)を使用することを必須とし
ている.一般にイミダゾール化合物は、目的とする温度
170〜250℃で硬化時間が短いことが知られてい
る。イミダゾール化合物としては、2−メチルイミダゾ
ール,2−エチルイミダゾール,2−フェニルイミダゾ
ール,2−フェニル−4−メチルイミダゾール,2−フ
ェニル−4−メチル−5−ヒドロキシメチルイミダゾー
ル,2−フェニル−4,5−ジヒドロキシメチルイミダ
ゾール,2−C1123−イミダゾール等の一般的なイミ
ダゾールやトリアジンやイソシアヌル酸を付加し、保存
安定性を付与した2,4−ジアミノ−6−{2−メチル
イミダゾール−(1)}−エチル−S−トリアジン、ま
たそのイソシアネート付加物等があり、これらの内の1
種類あるいは複数種と併用可能である。イミダゾール化
合物の配合量は、全エポキシ樹脂に対し、0.5〜10
重量%使用するのが好ましい。0.5重量%未満では熱
時接着強度が弱く、10重量%を越えるとポットライフ
が著しく短くなる。
In the present invention, it is essential to use an imidazole compound (E) in order to enable rapid curing. Generally, it is known that an imidazole compound has a short curing time at a target temperature of 170 to 250 ° C. Examples of the imidazole compound include 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5. - dihydroxy methyl imidazole, 2-C 11 H 23 - adds a generic imidazole or triazine and isocyanuric acid such as imidazole, to impart storage stability of 2,4-diamino-6- {2-methylimidazole - (1 )} -Ethyl-S-triazine and its isocyanate adducts.
It can be used in combination with one or more types. The amount of the imidazole compound is 0.5 to 10 with respect to all epoxy resins.
It is preferred to use% by weight. If it is less than 0.5% by weight, the adhesive strength at the time of heating is weak, and if it exceeds 10% by weight, the pot life is significantly shortened.

【0014】本発明に用いる無機フィラー(E)として
は銀粉、シリカフィラー等があり、本発明のダイアタッ
チペーストにおいては樹脂成分100重量部に対して1
0〜400重量部配合される。10重量部未満では導電
性が発現しなかったり、線膨張係数を下げる効果に乏し
いので好ましくない。400重量部を越えるとペースト
粘度が上昇し、作業性が低下するので好ましくない。
The inorganic filler (E) used in the present invention includes silver powder and silica filler. In the die attach paste of the present invention, 1 to 100 parts by weight of the resin component is used.
0 to 400 parts by weight is blended. If the amount is less than 10 parts by weight, conductivity is not exhibited or the effect of lowering the coefficient of linear expansion is poor. If the amount exceeds 400 parts by weight, the viscosity of the paste increases, and the workability decreases, which is not preferable.

【0015】銀粉は導電性を付与するために用いられ、
ハロゲンイオン、アルカリ金属イオン等のイオン性不純
物の含有量は10ppm以下であることが好ましい。又銀粉
の形状としてはフレーク状、樹脂状や球状等が用いられ
る。必要とするペーストの粘度により、使用する銀粉の
粒径は異なるが、通常平均粒径は2〜10μm、最大粒径
は50μm程度のものが好ましい。又比較的粗い銀粉と細
かい銀粉とを混合して用いることもでき、形状について
も各種のものを適宜混合してもよい。
The silver powder is used for imparting conductivity,
The content of ionic impurities such as halogen ions and alkali metal ions is preferably 10 ppm or less. The shape of the silver powder may be flake, resin, sphere or the like. The particle size of the silver powder to be used varies depending on the required viscosity of the paste, but usually the average particle size is preferably 2 to 10 μm, and the maximum particle size is preferably about 50 μm. In addition, a mixture of relatively coarse silver powder and fine silver powder can be used, and various shapes may be appropriately mixed.

【0016】本発明に用いるシリカフィラーは平均粒径
1〜20μmで最大粒径50μm以下のものである。平均粒
径が1μm未満だと粘度が高くなり、20μmを越えると
塗布又は硬化時に樹脂分が流出するのでブリードが発生
するため好ましくない。最大粒径が50μmを越えるとデ
ィスペンサーでペーストを塗布するときに、ニードルの
出口を塞ぎ長時間の連続使用ができない。又比較的粗い
シリカフィラーと細かいシリカフィラーとを混合して用
いることもでき、形状についても各種のものを適宜混合
してもよい。
The silica filler used in the present invention has an average particle size.
It has a maximum particle size of 50 μm or less with a size of 1 to 20 μm. If the average particle size is less than 1 μm, the viscosity increases, and if the average particle size exceeds 20 μm, bleeding occurs because the resin component flows out during coating or curing, which is not preferable. If the maximum particle size exceeds 50 μm, the outlet of the needle is blocked when applying the paste with a dispenser, so that long-time continuous use cannot be performed. Further, a mixture of a relatively coarse silica filler and a fine silica filler may be used, and various shapes may be appropriately mixed.

【0017】又、必要とされる特性を付与するために本
発明以外の無機フィラーを添加してもよい。
Further, an inorganic filler other than the present invention may be added in order to impart required properties.

【0018】本発明における樹脂ペーストには、必要に
より用途に応じた特性を損なわない範囲内で、シランカ
ップリング剤、チタネートカップリング剤、顔料、染
料、消泡剤、界面活性剤、溶剤等の添加剤を用いること
ができる。本発明の製造法としては、例えば各成分を予
備混合し、三本ロール等を用いて混練してペーストを得
た後、真空下脱抱すること等がある。
The resin paste of the present invention may contain a silane coupling agent, a titanate coupling agent, a pigment, a dye, a defoaming agent, a surfactant, a solvent, etc. as long as the properties according to the intended use are not impaired. Additives can be used. The production method of the present invention includes, for example, premixing the components, kneading using a three-roll mill or the like to obtain a paste, and then deconcentrating under vacuum.

【0019】[0019]

【実施例】本発明を実施例で具体的に説明する。各成分
の配合割合は重量部である。
EXAMPLES The present invention will be specifically described with reference to Examples. The mixing ratio of each component is part by weight.

【0020】<実施例1〜7、比較例1〜8>表1に示
した組成の各成分と無機フィラーを配合し、三本ロール
で混練して樹脂ペーストを得た。この樹脂ペーストを真
空チャンバーにて2mmHgで30分間脱泡して半導体用ダイ
アタッチペーストを得た。得られたペーストは、以下の
方法により各種の性能を評価した。評価結果を表1及び
表2に示す。
<Examples 1 to 7, Comparative Examples 1 to 8> Each component having the composition shown in Table 1 was mixed with an inorganic filler, and kneaded with a three-roll mill to obtain a resin paste. This resin paste was defoamed in a vacuum chamber at 2 mmHg for 30 minutes to obtain a die attach paste for semiconductors. Various performances of the obtained paste were evaluated by the following methods. The evaluation results are shown in Tables 1 and 2.

【0021】<用いる原料成分> ・ポリカルボジイミド樹脂(B1);日清紡(株)製:
カルボジライト10M−SP ・ポリカルボジイミド樹脂(B2);日清紡(株)製:
カルボジライトV−05
<Raw materials used> Polycarbodiimide resin (B1); manufactured by Nisshinbo Co., Ltd .:
Carbodilite 10M-SP • Polycarbodiimide resin (B2); manufactured by Nisshinbo Co., Ltd .:
Carbodilite V-05

【0022】・ビスフェノールA型エポキシ樹脂(BP
A):粘度9000mPa・s、エポキシ当量185 ・ビスフェノールF型エポキシ樹脂(BPF):粘度50
00mPa・s、エポキシ当量170 ・潜在性硬化剤(C):ジシアンジアミド(DDA) ・イミダゾール化合物(D):2−フェニル−4−メチ
ル−5−ヒドロキシメチルイミダゾール(2P4MH
Z) ・ 無機フィラー(E): 銀粉 :粒径が0.1〜50μmで平均粒径3μmのフレーク状 シリカフィラー:平均粒径5μmで最大粒径20μmのシ
リカフィラー
Bisphenol A type epoxy resin (BP
A): viscosity 9000 mPas, epoxy equivalent 185 bisphenol F type epoxy resin (BPF): viscosity 50
00 mPa · s, epoxy equivalent 170 ・ Latent curing agent (C): dicyandiamide (DDA) ・ Imidazole compound (D): 2-phenyl-4-methyl-5-hydroxymethylimidazole (2P4MH)
Z)-Inorganic filler (E): Silver powder: Flake-like silica filler with particle diameter of 0.1 to 50 m and average particle diameter of 3 m: Silica filler with average particle diameter of 5 m and maximum particle diameter of 20 m

【0023】<評価方法> ・粘度 :E型粘度計(3°コーン)を用い25
℃、2.5rpmでの値を測定し粘度とした。 ・弾性率 :テフロンシート上にペーストを幅10
mm長さ約150mm厚さ100μmに塗布し、200
℃オーブン中30分間硬化した後、引っ張り試験機で試
験長100mm引っ張り速度1mm/分にて測定し得ら
れた応力―ひずみ曲線の初期勾配より弾性率を算出し
た。 ・接着強度 :2×2mmのシリコンチップをペース
トを用いて銅フレームにマウントし200℃中30分間
オーブン中で硬化した。硬化後マウント強度測定装置を
用い25℃,250℃での熱時ダイシェア強度を測定し
た。 ・反り量 :6×15×0.3mmシリコンチップ
を銅フレーム(200μm厚さ)に得られたペーストで
マウントし、200℃20分間硬化した後、チップの反
りを表面粗さ計(測定長13mm)で測定した。 ・ポットライフ:25℃の恒温槽内に樹脂ペーストを放
置した時の粘度が初期粘度の1.2倍以上増粘するまで
の日数を測定した。
<Evaluation method> Viscosity: 25 using an E-type viscometer (3 ° cone)
The viscosity was measured at a temperature of 2.5 ° C. and a temperature of 2.5 ° C., and the viscosity was determined.・ Elastic modulus: paste 10 width on Teflon sheet
about 150 mm length and 100 μm thickness, 200
After curing in an oven at 30 ° C. for 30 minutes, the modulus of elasticity was calculated from the initial gradient of the stress-strain curve obtained by measuring with a tensile tester a test length of 100 mm and a pulling rate of 1 mm / min. Adhesive strength: A 2 × 2 mm silicon chip was mounted on a copper frame using a paste and cured in an oven at 200 ° C. for 30 minutes. After curing, the die shear strength under heat at 25 ° C. and 250 ° C. was measured using a mount strength measuring device. Amount of warpage: A silicon chip of 6 × 15 × 0.3 mm was mounted on a copper frame (200 μm thick) with the obtained paste, and cured at 200 ° C. for 20 minutes. ). Pot life: The number of days until the viscosity when the resin paste was allowed to stand in a thermostat at 25 ° C. increased to 1.2 times or more the initial viscosity was measured.

【0024】[0024]

【表1】 [Table 1]

【0025】[0025]

【表2】 [Table 2]

【0026】実施例1〜7では熱時接着強度、低応力性
(低弾性率、低反り量)及びポットライフが長い優れた
ペーストが得られるが、比較例1はビスフェノールA型
エポキシ樹脂を使用したため低応力性が悪く、反り量が
大きくなりチップクラックが発生する。比較例2はビス
フェノールF型エポキシ樹脂を使用したため低応力性が
悪く、反り量が大きくなりチップクラックが発生する。
比較例3は化合物B1の配合量が多く、粘度が高くなり
作業性が著しく低下する。比較例4はビスフェノールA
型エポキシのみで、反りが著しく大きくなる。比較例5
は銀フィラーの量が多く、粘度が高く、接着強度が著し
く低下する。比較例6は化合物B2の配合量が多く、反
り量が小さくなるが粘度は大幅に上昇する。比較例7は
シリカフィラーの配合量が少なく、熱時の接着強度が著
しく低下する。比較例8は化合物B1の配合量が多くま
たイミダゾールの配合量も多いため粘度が高い上に、ポ
ットライフが著しく短くなる。
In Examples 1 to 7, an excellent paste having a hot adhesive strength, low stress (low elastic modulus, low warpage) and a long pot life can be obtained. In Comparative Example 1, a bisphenol A type epoxy resin is used. As a result, the low stress property is poor, the amount of warpage increases, and chip cracks occur. In Comparative Example 2, a bisphenol F type epoxy resin was used, so that the low stress property was poor, the amount of warpage was large, and chip cracks occurred.
In Comparative Example 3, the compounding amount of the compound B1 was large, the viscosity was increased, and the workability was significantly reduced. Comparative Example 4 is bisphenol A
The warpage is significantly increased only with the type epoxy. Comparative Example 5
Has a large amount of silver filler, a high viscosity and a remarkable decrease in adhesive strength. In Comparative Example 6, the compounding amount of the compound B2 was large and the amount of warpage was small, but the viscosity was significantly increased. In Comparative Example 7, the amount of the silica filler was small, and the adhesive strength when heated was significantly reduced. In Comparative Example 8, since the compounding amount of the compound B1 was large and the compounding amount of imidazole was large, the viscosity was high and the pot life was significantly shortened.

【0027】[0027]

【発明の効果】本発明の半導体用ダイアタッチペースト
は、オーブン硬化での速硬化が可能で、熱時接着強度が
高く、かつ応力緩和性に優れているため、IC等の大型チ
ップと銅フレームとの接着に適しており、IC組立工程で
のチップクラックやチップ歪みによるIC等の特性不良を
防止できる。
The die attach paste for semiconductors of the present invention can be rapidly cured by oven curing, has a high adhesive strength when heated, and has excellent stress relaxation properties. It is suitable for bonding with ICs, and can prevent the characteristic failure of ICs and the like due to chip cracks and chip distortion in the IC assembly process.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/52 H01L 21/52 E //(C08L 63/00 79:02) Fターム(参考) 4J002 CD011 CD021 CD051 CD131 CM042 DJ018 EQ026 ER026 ET006 EU117 FD018 FD146 FD157 HA01 4J036 AB01 AB07 AB11 AB15 AD01 AD08 DA05 DC31 DC35 DC41 FA05 FB14 JA07 KA01 4J038 DB001 JB17 JB32 KA03 KA08 PB09 5F047 AA11 AA17 BA34 BB11 BB16──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/52 H01L 21/52 E // (C08L 63/00 79:02) F-term (Reference) 4J002 CD011 CD021 CD051 CD131 CM042 DJ018 EQ026 ER026 ET006 EU117 FD018 FD146 FD157 HA01 4J036 AB01 AB07 AB11 AB15 AD01 AD08 DA05 DC31 DC35 DC41 FA05 FB14 JA07 KA01 4J038 DB001 JB17 JB32 KA03 KA08 PB09 A11A11A

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 (A)室温で液体である液状エポキシ樹
脂、(B)ポリカルボジイミド樹脂、(C)潜在性硬化
剤、(D)イミダゾール化合物、(E)無機フィラーを
必須成分とし、成分(A)100重量部に対し、成分
(B)が1〜30重量部、成分(E)が成分(A)、
(B)、(C)、(D)の合計100重量部に対して1
0〜400重量部であることを特徴とする半導体用ダイ
アタッチペースト。
1. An essential component comprising (A) a liquid epoxy resin which is liquid at room temperature, (B) a polycarbodiimide resin, (C) a latent curing agent, (D) an imidazole compound, and (E) an inorganic filler. A) 100 parts by weight of component (B) is 1 to 30 parts by weight, component (E) is component (A),
(B), (C), 1 (D) for a total of 100 parts by weight
A die attach paste for a semiconductor, wherein the amount is 0 to 400 parts by weight.
JP10192499A 1999-04-09 1999-04-09 Die attach paste for semiconductor Expired - Fee Related JP3482153B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10192499A JP3482153B2 (en) 1999-04-09 1999-04-09 Die attach paste for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10192499A JP3482153B2 (en) 1999-04-09 1999-04-09 Die attach paste for semiconductor

Publications (2)

Publication Number Publication Date
JP2000290468A true JP2000290468A (en) 2000-10-17
JP3482153B2 JP3482153B2 (en) 2003-12-22

Family

ID=14313471

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3482153B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1357576A3 (en) * 2002-04-22 2006-04-26 Nisshinbo Industries, Inc. Highly heat-resistant plasma etching electrode and dry etching device including the same
JP2008031357A (en) * 2006-07-31 2008-02-14 Sumitomo Bakelite Co Ltd Liquid resin composition and semiconductor device prepared by using liquid resin composition
JP2008189815A (en) * 2007-02-05 2008-08-21 Nitto Denko Corp Dispersant, filler, heat-conductive resin composition and heat-conductive sheet
US10266644B2 (en) * 2015-04-06 2019-04-23 Nisshinbo Chemical Inc. Epoxy resin composition
TWI668269B (en) * 2014-06-30 2019-08-11 日商味之素股份有限公司 Resin composition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1357576A3 (en) * 2002-04-22 2006-04-26 Nisshinbo Industries, Inc. Highly heat-resistant plasma etching electrode and dry etching device including the same
JP2008031357A (en) * 2006-07-31 2008-02-14 Sumitomo Bakelite Co Ltd Liquid resin composition and semiconductor device prepared by using liquid resin composition
JP2008189815A (en) * 2007-02-05 2008-08-21 Nitto Denko Corp Dispersant, filler, heat-conductive resin composition and heat-conductive sheet
TWI668269B (en) * 2014-06-30 2019-08-11 日商味之素股份有限公司 Resin composition
US10266644B2 (en) * 2015-04-06 2019-04-23 Nisshinbo Chemical Inc. Epoxy resin composition

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