JP2000288909A - Method for manufacturing highly flat wafer - Google Patents
Method for manufacturing highly flat waferInfo
- Publication number
- JP2000288909A JP2000288909A JP9264299A JP9264299A JP2000288909A JP 2000288909 A JP2000288909 A JP 2000288909A JP 9264299 A JP9264299 A JP 9264299A JP 9264299 A JP9264299 A JP 9264299A JP 2000288909 A JP2000288909 A JP 2000288909A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing step
- carrier plate
- pressure
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は高平坦度ウェーハ
の作製方法、詳しくはバッチ式の研磨装置による表面研
磨において、半導体ウェーハの平坦度を高める高平坦度
ウェーハの作製方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a high flatness wafer, and more particularly to a method for manufacturing a high flatness wafer for improving the flatness of a semiconductor wafer in surface polishing by a batch type polishing apparatus.
【０００２】[0002]
【従来の技術】表面がエッチングされたシリコンウェー
ハ（半導体ウェーハ）は、次工程のポリッシング工程
で、そのウェーハ表面に機械的化学的研磨が施される。
すなわち、研磨装置により、このウェーハ表面が平滑で
無歪の鏡面に仕上げられる。研磨装置の一種として、バ
ッチ式の研磨装置が知られている。これは、上面に研磨
布が展張された研磨定盤と、ワックスを介して裏面に複
数枚のシリコンウェーハが貼着されたキャリアプレート
が着脱自在に装着される研磨ヘッドとを備えている。な
お、各シリコンウェーハは、キャリアプレートにてその
中心点を中心とした同心円上に配置される。このバッチ
式の研磨装置での研磨は、研磨布上に焼成シリカやコロ
イダルシリカ（シリカゾル）などの研磨砥粒を含む研磨
液（スラリー）を供給しながら、研磨布とシリコンウェ
ーハとの間に、所定の荷重および相対速度を与えること
で行われる。ところで、この研磨段階は、通常、複数の
工程（研磨段数）から構成される。すなわち、例えば１
次研磨工程、２次研磨工程、３次研磨工程、および、仕
上げ研磨工程の４つの研磨段数で構成される。それぞれ
の研磨工程では、例えば各工程に配備された研磨装置の
研磨定盤に、硬度が異なる研磨布を展張させたりして、
各々の研磨工程の研磨条件を相違させている。2. Description of the Related Art A silicon wafer (semiconductor wafer) whose surface has been etched is subjected to mechanical and chemical polishing on the wafer surface in a polishing step of the next step.
That is, the wafer surface is finished to a smooth and non-distorted mirror surface by the polishing apparatus. As one type of polishing apparatus, a batch-type polishing apparatus is known. It has a polishing platen on which a polishing cloth is spread on the upper surface, and a polishing head on which a carrier plate having a plurality of silicon wafers adhered on the rear surface via wax is detachably mounted. Each silicon wafer is arranged on a concentric circle centered on the center point of the carrier plate. Polishing with this batch-type polishing apparatus involves supplying a polishing liquid (slurry) containing polishing abrasive grains such as calcined silica or colloidal silica (silica sol) onto a polishing cloth while supplying a polishing liquid between the polishing cloth and the silicon wafer. This is performed by applying a predetermined load and a relative speed. Incidentally, this polishing step usually comprises a plurality of steps (the number of polishing steps). That is, for example, 1
It is composed of four polishing steps of a secondary polishing step, a secondary polishing step, a tertiary polishing step, and a finish polishing step. In each polishing step, for example, by spreading a polishing cloth having a different hardness on a polishing platen of a polishing device provided in each step,
The polishing conditions in each polishing step are different.
【０００３】ところで、従来のバッチ式研磨装置として
は、キャリアプレートの中心部に空気圧による中心荷重
（変化する研磨荷重）をかけ、しかもプレート外周部
に、おもりによる外周荷重（一定の静荷重）をかける研
磨装置が知られている。このような研磨装置では、空気
圧でプレート中心部にかけられた荷重の集中を原因とし
た突出変形、具体的には、シリコンウェーハのプレート
中心部側が薄くなったテーパ状の変形を、キャリアプレ
ートの中心部と外周部との荷重バランスを調整すること
により解消している。In a conventional batch-type polishing apparatus, a center load (changing polishing load) is applied to the center of a carrier plate by air pressure, and an outer peripheral load (a constant static load) caused by a weight is applied to an outer peripheral portion of the plate. 2. Description of the Related Art Applied polishing apparatuses are known. In such a polishing apparatus, the projecting deformation caused by the concentration of the load applied to the center of the plate by air pressure, specifically, the tapered deformation in which the center portion of the silicon wafer becomes thinner at the center of the carrier plate. The problem is solved by adjusting the load balance between the portion and the outer peripheral portion.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな荷重調整機能を備えた従来の研磨装置でシリコンウ
ェーハを研磨しても、若干の変形がキャリアプレート１
００に生じていた。すなわち、図７および図８に示すよ
うに、このプレート１００の中心部への圧力を原因にし
て、各シリコンウェーハＷのキャリアプレート１００中
心部側に小さなダレａが発生していた。しかも、上記お
もりにより、キャリアプレート１００の外周部にかかる
外周荷重で、シリコンウェーハＷの中央部からキャリア
プレート１００外周側の端部にかけて、比較的大きな波
形の凹部ｂが形成されていた。その結果、ＴＴＶ(Total
Thickness Variation) およびＳＢＩＲ(Site Back-side
Ideal Range)などで評価される、シリコンウェーハＷ
の表面の平坦度が低下していた。なお、図７は従来手段
に係る研磨ヘッドの底面図である。また、図８は従来手
段に係る研磨後のシリコンウェーハの断面形状を示す模
式図である。However, even if a silicon wafer is polished by a conventional polishing apparatus having such a load adjusting function, a slight deformation is caused on the carrier plate 1.
00 had occurred. That is, as shown in FIGS. 7 and 8, due to the pressure applied to the center of the plate 100, a small sag occurred on the side of the center of the carrier plate 100 of each silicon wafer W. Moreover, due to the above-mentioned weight, the concave portion b having a relatively large waveform was formed from the central portion of the silicon wafer W to the end portion on the outer peripheral side of the carrier plate 100 by the outer peripheral load applied to the outer peripheral portion of the carrier plate 100. As a result, TTV (Total
Thickness Variation) and SBIR (Site Back-side
Silicon wafer W evaluated by (Ideal Range) etc.
Had a reduced surface flatness. FIG. 7 is a bottom view of the polishing head according to the conventional means. FIG. 8 is a schematic diagram showing a cross-sectional shape of a polished silicon wafer according to a conventional means.
【０００５】そこで、発明者らは、鋭意研究の結果、こ
の研磨時の押圧力（研磨圧力）の大きさが、キャリアプ
レートの中心部とその外周部とで異なることにより研磨
後のシリコンウェーハの表面形状に変化が生じる点、お
よび、研磨工程が複数の研磨段数から構成される点に着
目した。すなわち、各段階の研磨時におけるプレート中
心部側の押圧力と、プレート外周部側の押圧力との大小
関係が適切となるように調整すれば、研磨後のシリコン
ウェーハの平坦度が高まることを見い出し、この発明を
完成させるに至った。[0005] The inventors of the present invention have conducted intensive studies and as a result, the magnitude of the pressing force (polishing pressure) at the time of polishing differs between the central portion of the carrier plate and the outer peripheral portion thereof. Attention was paid to the point that the surface shape is changed and that the polishing step is composed of a plurality of polishing steps. That is, by adjusting the pressing force on the central portion of the plate and the pressing force on the outer peripheral portion of the plate during polishing at each stage to be appropriate, the flatness of the polished silicon wafer is increased. Have found and completed the present invention.
【０００６】[0006]
【発明の目的】そこで、この発明は、半導体ウェーハの
平坦度を高めることができる高平坦度ウェーハの作製方
法を提供することを、その目的としている。また、この
発明は、研磨布の張り替え直後における半導体ウェーハ
の平坦度の低下を防ぐことができる高平坦度ウェーハの
作製方法を提供することを、その目的としている。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing a high flatness wafer capable of increasing the flatness of a semiconductor wafer. It is another object of the present invention to provide a method for manufacturing a high flatness wafer that can prevent a decrease in flatness of a semiconductor wafer immediately after the polishing cloth is replaced.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載の発明
は、研磨定盤上に展張された研磨布に、研磨砥粒を含む
研磨液を供給しながら、キャリアプレートにワックスで
貼着された複数枚の半導体ウェーハの表面を、所定の研
磨圧力でもって上記研磨布の研磨作用面に押しつけるこ
とにより研磨する研磨段階を含む高平坦度ウェーハの作
製方法において、上記研磨段階が、１次研磨工程、仕上
げ研磨工程を含む３つ以上の研磨段数で構成され、上記
仕上げ研磨工程の直前の研磨工程より前の研磨工程での
研磨圧力は、上記キャリアプレートの中心部よりその外
周部の方を大きくし、上記仕上げ研磨工程の直前の研磨
工程の研磨圧力は、これとは反対に、上記キャリアプレ
ートの中心部の方をその外周部より大きくし、上記仕上
げ研磨工程では、上記キャリアプレートの中心部と外周
部との研磨圧力を同等にした高平坦度ウェーハの作製方
法である。According to the first aspect of the present invention, a polishing pad containing wax is adhered to a carrier plate while supplying a polishing liquid containing polishing abrasive grains to a polishing cloth spread on a polishing platen. In a method for producing a high flatness wafer including a polishing step of polishing by pressing the surfaces of the plurality of semiconductor wafers against a polishing surface of the polishing cloth with a predetermined polishing pressure, the polishing step includes a primary polishing. And a polishing pressure in a polishing step prior to the polishing step immediately before the final polishing step, the outer peripheral portion of the carrier plate being closer to the outer peripheral portion than the central portion of the carrier plate. On the contrary, the polishing pressure in the polishing step immediately before the final polishing step, on the contrary, the central part of the carrier plate is made larger than the outer peripheral part thereof. The polishing pressure between the center portion and the peripheral portion of the carrier plate is a high flatness wafer manufacturing method which is equivalent.
【０００８】この高平坦度ウェーハの作製方法に適用さ
れる研磨装置は、研磨ヘッドに取り付けられたキャリア
プレートに複数枚の半導体ウェーハをワックス貼着する
タイプであれば限定されない。キャリアプレートに貼着
されるこの半導体ウェーハの枚数も複数枚であれば限定
されない。半導体ウェーハには、例えばシリコンウェー
ハ，ガリウム砒素ウェーハなどが挙げられる。研磨布の
種類は限定されず、例えば硬質ウレタンパッド，ＣｅＯ
２パッドなどが挙げられる。研磨液の種類は限定されな
い。例えば、焼成シリカ，コロイダルシリカ（研磨砥
粒），アミン（加工促進材）および有機高分子（ヘイズ
抑制材）などを混合したものを採用することができる。
コロイダルシリカは、珪酸微粒子の凝集が起こらないで
一次粒子のまま水中に分散した透明もしくは不透明の乳
白色のコロイド液を形成して存在する。また、この研磨
砥粒の平均粒径は限定されない。好ましくは０．００５
〜０．１μｍ、特に約０．０３μｍである。The polishing apparatus applied to the method for producing a high flatness wafer is not limited as long as a plurality of semiconductor wafers are attached to a carrier plate attached to a polishing head by wax. The number of semiconductor wafers to be attached to the carrier plate is not limited as long as the number is also plural. Examples of the semiconductor wafer include a silicon wafer and a gallium arsenide wafer. The type of the polishing cloth is not limited. For example, a hard urethane pad, CeO
And two pads. The type of the polishing liquid is not limited. For example, a mixture of calcined silica, colloidal silica (abrasive grains), amine (a processing accelerator), and an organic polymer (a haze inhibitor) can be used.
Colloidal silica is present as a transparent or opaque milky white colloid liquid dispersed in water as primary particles without agglomeration of silicate fine particles. The average particle size of the abrasive grains is not limited. Preferably 0.005
０．１0.1 μm, especially about 0.03 μm.
【０００９】キャリアプレートの中心部に中心荷重をか
ける方法は限定されない。例えば、キャリアプレートの
中心部に空気圧により荷重をかける方法などが挙げられ
る。また、キャリアプレートの外周部に荷重をかける方
法も限定されない。例えば、おもりによってプレート外
周部に荷重をかけるようにしてもよい。仕上げ研磨工程
を含む研磨段数は、３つ以上であれば限定されない。す
なわち、請求項２に記載の発明および請求項３に記載の
発明のように、３つまたは４つの研磨段数でもよいし、
５つ以上の研磨段数で構成してもよい。各研磨工程にお
ける中心荷重および外周荷重の大きさは限定されない。
また、それぞれの研磨工程間において、同じ中心荷重＜
外周荷重の関係であっても、各研磨工程内での、中心荷
重および外周荷重の荷重比は限定されない。例えば中心
荷重１：外周荷重２、または、中心荷重２：外周荷重３
としてもよい。The method of applying a center load to the center of the carrier plate is not limited. For example, there is a method of applying a load to the center of the carrier plate by air pressure. Further, a method of applying a load to the outer peripheral portion of the carrier plate is not limited. For example, a load may be applied to the outer peripheral portion of the plate by a weight. The number of polishing steps including the finish polishing step is not limited as long as it is three or more. That is, as in the invention described in claim 2 and the invention described in claim 3, three or four polishing stages may be used,
The number of polishing stages may be five or more. The magnitude of the center load and the outer peripheral load in each polishing step is not limited.
In addition, the same center load <
Even in the relationship of the outer peripheral load, the load ratio of the center load and the outer peripheral load in each polishing step is not limited. For example, center load 1: outer circumference load 2, or center load 2: outer circumference load 3
It may be.
【００１０】各研磨工程での半導体ウェーハの研磨量
は、仕上げ研磨の直前の研磨工程時に高平坦度が得ら
れ、しかも仕上げ研磨時にこの高平坦度を維持すること
ができる量であれば限定されない。同様に、各研磨工程
での研磨時間も限定されない。また、おのおのの研磨工
程で使用される研磨布の種類、硬度なども限定されな
い。例えば４次研磨まで有する場合、例えば、１次研磨
時にローデル・ニッタ株式会社製の「Ｓｕｂａ９００」
（プレス加工品）を用い、２次研磨時に「Ｓｕｂａ８０
０」を用い、３次研磨時に「Ｓｕｂａ６００」を用い、
仕上げ研磨時に第１レース株式会社製「シーガル」を用
いる。なお、この商品名「Ｓｕｂａ」シリーズの研磨布
の場合、その数字が小さくなるにつれて硬度が小さくな
る。The polishing amount of the semiconductor wafer in each polishing step is not limited as long as a high flatness can be obtained in the polishing step immediately before the final polishing and the high flatness can be maintained during the final polishing. . Similarly, the polishing time in each polishing step is not limited. Further, the type, hardness, and the like of the polishing cloth used in each polishing step are not limited. For example, in the case of having up to the fourth polishing, for example, at the time of the first polishing, “Suba900” manufactured by Rodel Nitta Corporation
(Pressed product) using “Suba80” during secondary polishing.
0 ”, using“ Suba600 ”during the third polishing,
"Seagull" manufactured by Daiichi Race Co., Ltd. is used at the time of finish polishing. In the case of the abrasive cloth of the trade name “Suba” series, the hardness decreases as the number decreases.
【００１１】また、請求項２に記載の発明は、上記研磨
段階は、１次研磨工程、２次研磨工程、３次研磨工程お
よび上記仕上げ研磨工程により構成され、１次研磨工程
での研磨時および２次研磨工程での研磨時は、上記キャ
リアプレートの中心部の研磨圧力よりその外周部の研磨
圧力を大きくし、これとは反対に、３次研磨時には、上
記キャリアプレートの中心部の研磨圧力をその外周部の
研磨圧力より大きくした請求項１に記載の高平坦度ウェ
ーハの作製方法である。Further, in the invention according to claim 2, the polishing step comprises a primary polishing step, a secondary polishing step, a tertiary polishing step and the finish polishing step, and the polishing step is performed in the primary polishing step. During the polishing in the secondary polishing step, the polishing pressure at the outer peripheral portion is set to be larger than the polishing pressure at the central portion of the carrier plate. Conversely, during the third polishing, the polishing at the central portion of the carrier plate is performed. 2. The method for producing a high flatness wafer according to claim 1, wherein the pressure is higher than the polishing pressure of the outer peripheral portion.
【００１２】さらに、請求項３に記載の発明は、上記研
磨段階が、１次研磨工程と、２次研磨工程と、上記仕上
げ研磨工程とで構成され、１次研磨工程での研磨時は、
上記キャリアプレートの外周部の研磨圧力を中心部のそ
れより大きくし、これとは反対に、２次研磨工程での研
磨時は、上記キャリアプレートの中心部の研磨圧力をそ
の外周部の研磨圧力より大きくした請求項１に記載の高
平坦度ウェーハの作製方法である。Further, in the invention according to claim 3, the polishing step comprises a primary polishing step, a secondary polishing step, and the finish polishing step, and at the time of polishing in the primary polishing step,
The polishing pressure at the outer peripheral portion of the carrier plate is set to be larger than that at the central portion. Conversely, during the polishing in the secondary polishing step, the polishing pressure at the central portion of the carrier plate is reduced by the polishing pressure at the outer peripheral portion. 2. The method for producing a high flatness wafer according to claim 1, wherein the wafer is made larger.
【００１３】さらにまた、請求項４に記載の発明は、上
記各研磨工程では、研磨定盤に冷却水を流しながら、半
導体ウェーハの表面を研磨するとともに、特定の研磨工
程で研磨定盤の研磨布を交換するとき、交換しない研磨
定盤への冷却水の供給を制御することにより、その研磨
定盤の温度を一定に保持する請求項１〜請求項３のうち
のいずれか１項に記載の高平坦度ウェーハの作製方法で
ある。各研磨定盤の水冷構造は限定されない。どのよう
な方式でもよい。例えば、研磨定盤の表面側に渦巻き形
状のウォータジャケットを設け、このウォータジャケッ
トに研磨定盤の回転軸の内部に穿孔された軸水路を経
て、外設の冷却水タンクから循環ポンプにより冷却水を
循環させてもよい。非交換の研磨定盤への冷却水の供給
制御は、例えば冷却水を流し続けることで行う。Further, the invention according to claim 4 is characterized in that in each of the polishing steps, the surface of the semiconductor wafer is polished while flowing cooling water to the polishing table, and the polishing of the polishing table is performed in a specific polishing step. The method according to any one of claims 1 to 3, wherein when the cloth is replaced, the temperature of the polishing platen is kept constant by controlling the supply of cooling water to the polishing platen that is not replaced. This is a method for producing a high flatness wafer. The water cooling structure of each polishing platen is not limited. Any method may be used. For example, a spiral water jacket is provided on the surface side of the polishing platen, and the cooling water is supplied from an external cooling water tank to the water jacket by a circulation pump through an axial water passage formed inside the rotating shaft of the polishing platen. May be circulated. The supply control of the cooling water to the non-replacement polishing platen is performed by, for example, continuously flowing the cooling water.
【００１４】そして、請求項５に記載の発明は、上記研
磨布が交換される研磨定盤は、仕上げ研磨用の研磨定盤
である請求項４に記載の高平坦度ウェーハの作製方法で
ある。According to a fifth aspect of the present invention, there is provided the method of manufacturing a high flatness wafer according to the fourth aspect, wherein the polishing platen on which the polishing pad is replaced is a polishing platen for finish polishing. .
【００１５】[0015]
【作用】この発明に係る半導体ウェーハの研磨装置によ
れば、まず１次研磨工程から、仕上げ研磨工程の直前の
研磨工程より前の研磨工程（仕上げ研磨より２段前）ま
では、キャリアプレートの中心部の研磨圧力よりプレー
ト外周部の研磨圧力の方を大きくして半導体ウェーハの
研磨を行う（中心荷重＜外周荷重）。これにより、半導
体ウェーハの表面のプレート外周部側の端部付近に凹部
が形成されやすい。次の仕上げ研磨直前の研磨工程で
は、キャリアプレートの中心部の研磨圧力を、このプレ
ート外周部の研磨圧力より大きくして所定の研磨を行う
（中心荷重＞外周荷重）。この結果、それ以前の研磨段
数の研磨工程において、相対的に厚肉化していたウェー
ハ内側部分の研磨量が増える反面、それまで相対的に薄
肉化していたウェーハ外側部分の研磨量が減少する。そ
の結果、半導体ウェーハの表面の平坦度が高まる。続く
仕上げ研磨工程では、キャリアプレートの中心部と外周
部との研磨圧力を略等しくして、仕上げ研磨が施され
る。よって、仕上げ研磨直前の研磨により得られた高い
平坦度状態を維持したまま仕上げ研磨が行われる。その
結果、半導体ウェーハの研磨後の変形量が従来よりも小
さくなる。よって、半導体ウェーハ表面の平坦度（ＴＴ
Ｖなど）が高まる。According to the semiconductor wafer polishing apparatus of the present invention, from the first polishing step to the polishing step (two steps before the final polishing) prior to the polishing step immediately before the final polishing step, the carrier plate is polished. The semiconductor wafer is polished by making the polishing pressure on the outer peripheral portion of the plate larger than the polishing pressure on the central portion (center load <outer peripheral load). As a result, a concave portion is likely to be formed near the edge of the surface of the semiconductor wafer on the outer peripheral side of the plate. In the polishing process immediately before the next finish polishing, predetermined polishing is performed by setting the polishing pressure at the center of the carrier plate to be larger than the polishing pressure at the outer periphery of the plate (center load> outer peripheral load). As a result, in the previous polishing step of the number of polishing steps, the polishing amount of the relatively thick inner portion of the wafer increases, but the polishing amount of the relatively thin outer portion of the wafer decreases. As a result, the flatness of the surface of the semiconductor wafer increases. In the subsequent finish polishing step, the polishing pressure is substantially equalized between the central portion and the outer peripheral portion of the carrier plate, and the final polishing is performed. Therefore, the final polishing is performed while maintaining the high flatness state obtained by the polishing immediately before the final polishing. As a result, the amount of deformation of the semiconductor wafer after polishing becomes smaller than before. Therefore, the flatness of the semiconductor wafer surface (TT
V, etc.).
【００１６】特に、請求項４および請求項５の発明よれ
ば、例えば交換頻度が高い仕上げ研磨用の研磨定盤に展
張された研磨布を交換する際には、通常、この交換され
る研磨定盤に対する冷却水の供給を一時中断して、その
交換が行われる。なお、通常、この特定の研磨布（仕上
げ研磨用の研磨布など）の交換時には、各研磨段数の研
磨工程における研磨の流れ上、その他の研磨工程も一時
中断される。この際、従来では、交換されない他の研磨
定盤への冷却水の供給が一時中断していた。このように
他の研磨定盤への冷却水の供給も一時中断すると、各研
磨段数において、それまで、研磨時の研磨熱による研磨
布および研磨定盤の熱変形量（定盤の上方への反り量）
を考慮して、他の研磨工程での研磨量の配分を行ってい
た、研磨工程全体にわたったウェーハ厚さの制御が無駄
になる。In particular, according to the fourth and fifth aspects of the present invention, for example, when replacing a polishing cloth spread on a polishing platen for finish polishing, which is frequently exchanged, usually the exchanged polishing table is replaced. The supply of the cooling water to the panel is temporarily suspended, and the replacement is performed. Normally, when the specific polishing cloth (polishing cloth for finish polishing, etc.) is replaced, other polishing steps are temporarily interrupted due to the flow of polishing in the polishing step of each polishing step. At this time, conventionally, the supply of cooling water to another polishing platen that is not replaced has been temporarily suspended. When the supply of the cooling water to the other polishing platens is temporarily stopped in this way, the amount of thermal deformation of the polishing cloth and the polishing platen due to the polishing heat at the time of polishing (the upward deformation of the polishing platen) at each polishing stage. Warpage)
In consideration of the above, the control of the wafer thickness over the entire polishing process, which has been performed to distribute the polishing amount in another polishing process, becomes useless.
【００１７】すなわち、研磨定盤への冷却水（例えば１
８℃）の供給を中断すると研磨定盤の温度が上昇し、研
磨布および研磨定盤の反りが、それまでより小さくな
る。これにより、研磨布交換の直後において、当該研磨
段数の研磨工程での、半導体ウェーハのプレート中心部
側とその外周部側との研磨量が、研磨布を交換する前と
異なる。よって、その後の研磨段数の研磨工程における
研磨量とのバランスがくずれる。その結果、半導体ウェ
ーハが、プレート中心部側より外周部側が薄くなったテ
ーパ状のウェーハになる。このため、平坦度の高い半導
体ウェーハＷが得られなかった。That is, cooling water (for example, 1
When the supply of (8 ° C.) is interrupted, the temperature of the polishing table increases, and the warpage of the polishing cloth and the polishing table becomes smaller than before. As a result, immediately after the replacement of the polishing cloth, the amount of polishing between the central portion of the plate and the outer peripheral portion of the plate of the semiconductor wafer in the polishing step of the corresponding number of polishing steps differs from that before the replacement of the polishing cloth. Therefore, the balance between the number of polishing steps and the polishing amount in the polishing step is lost. As a result, the semiconductor wafer becomes a tapered wafer in which the outer peripheral portion is thinner than the plate central portion. Therefore, a semiconductor wafer W having high flatness could not be obtained.
【００１８】一方、この請求項４および請求項５の発明
では、研磨布が交換されない他の研磨工程に配備された
研磨定盤への冷却水の供給を継続したままにする。これ
により、他の研磨工程に配備された研磨布および研磨定
盤の熱変形を原因とした反りの低下が抑えられる。この
ため、上記張り替え直後の半導体ウェーハ表面の平坦度
の低下を防ぐことができる。[0018] On the other hand, in the inventions according to the fourth and fifth aspects, the supply of the cooling water to the polishing platen provided in another polishing step in which the polishing cloth is not exchanged is maintained. Thereby, a reduction in warpage due to thermal deformation of the polishing cloth and the polishing platen provided in another polishing step can be suppressed. For this reason, it is possible to prevent a decrease in the flatness of the surface of the semiconductor wafer immediately after the replacement.
【００１９】[0019]
【発明の実施の形態】以下、この発明の実施例を図面を
参照して説明する。まず、図１〜図３に基づいて、４つ
の研磨工程からなるこの発明の第１実施例を説明する。
図１はこの発明の第１実施例に係る高平坦度ウェーハの
作製方法を用いたウェーハ研磨中の研磨ヘッド部分の拡
大断面図である。図２はこの発明の第１実施例に係るウ
ェーハ研磨中の研磨ヘッドの底面図である。図３はこの
発明の第１実施例に係る各研磨段数の研磨工程での半導
体ウェーハの変形を示す説明図である。Embodiments of the present invention will be described below with reference to the drawings. First, a first embodiment of the present invention comprising four polishing steps will be described with reference to FIGS.
FIG. 1 is an enlarged sectional view of a polishing head portion during wafer polishing using the method for producing a high flatness wafer according to the first embodiment of the present invention. FIG. 2 is a bottom view of the polishing head during wafer polishing according to the first embodiment of the present invention. FIG. 3 is an explanatory view showing the deformation of the semiconductor wafer in the polishing step of each polishing step number according to the first embodiment of the present invention.
【００２０】図１において、１０は第１実施例のバッチ
式の研磨装置であり、１次〜３次研磨用と、仕上げ研磨
用の４台が配備されている。各研磨装置１０は、表面に
硬質ウレタンパッド製の研磨布１１が展張された研磨定
盤１２と、この上方に配設された研磨ヘッド１３とを備
えている。各研磨布１１としては、１次研磨用としてロ
ーデル・ニッタ株式会社製の「Ｓｕｂａ９００」，２次
研磨用に同社製「Ｓｕｂａ８００」，３次研磨用に同社
製「Ｓｕｂａ６００」を用い、仕上げ研磨時に第１レー
ス株式会社製の「シーガル」が用いられる。In FIG. 1, reference numeral 10 denotes a batch-type polishing apparatus according to the first embodiment, which is provided with four units for primary to tertiary polishing and for final polishing. Each polishing apparatus 10 includes a polishing platen 12 on the surface of which a polishing cloth 11 made of hard urethane pad is spread, and a polishing head 13 disposed above the polishing platen. As each polishing cloth 11, "Suba900" manufactured by Rodel Nitta Co., Ltd. is used for primary polishing, "Suba800" manufactured by the company for secondary polishing, and "Suba600" manufactured by the company for tertiary polishing. "Seagull" manufactured by Daiichi Race Co., Ltd. is used.
【００２１】研磨ヘッド１３は、円盤状のヘッド本体１
４を有している。このヘッド本体１４の外周部下面に
は、厚肉な環状フランジ１４ａが一体形成されている。
環状フランジ１４ａの下端面には、Ｏリング１５を介し
て、セラミック製のキャリアプレート１６が着脱可能に
固着されている。このプレート１６の裏面には、直径イ
ンチ，厚さ７４０±７μｍの４枚のシリコンウェーハＷ
がワックスにより貼着されている。なお、各シリコンウ
ェーハＷは、このキャリアプレート１６の中心点から半
径方向に所定距離だけ離間した仮想円上に、周方向へ９
０度ごと離間して貼着されている（図２参照）。The polishing head 13 is a disk-shaped head body 1.
Four. On the lower surface of the outer peripheral portion of the head main body 14, a thick annular flange 14a is integrally formed.
A ceramic carrier plate 16 is detachably fixed to the lower end surface of the annular flange 14a via an O-ring 15. On the back surface of the plate 16 are four silicon wafers W having a diameter of inch and a thickness of 740 ± 7 μm.
Are attached by wax. In addition, each silicon wafer W is placed on an imaginary circle radially separated from the center point of the carrier plate 16 by a predetermined distance in the circumferential direction by 9 mm.
It is stuck at a distance of 0 degrees (see FIG. 2).
【００２２】一方、このキャリアプレート１６の中心部
一帯の上面には、円板状のセンター押圧治具１７が取り
付けられている。センター押圧治具１７の中心部上に
は、ヘッド本体１４の貫通孔１４ｂを介して、その上方
に配設されたヘッド駆動部（図外）側へと延びるセンタ
ー押し用シャフト１８の下端が固着されている。なお、
このセンター押し用シャフト１８は空気圧シリンダのピ
ストンロッドまたはこれに連結されているものとする。
このヘッド本体１４の上面には、円板形状をしたおもり
１９が装着されている。なお、図１において、１９ａは
おもり１９の中央部に穿孔されて、センター押し用シャ
フト１８を遊挿するための貫通孔である。On the other hand, a disc-shaped center pressing jig 17 is attached to the upper surface of the entire central portion of the carrier plate 16. At the center of the center pressing jig 17, the lower end of a center pressing shaft 18 extending toward a head driving unit (not shown) disposed above through the through hole 14 b of the head body 14 is fixed. Have been. In addition,
The center pushing shaft 18 is assumed to be connected to a piston rod of a pneumatic cylinder or to the piston rod.
A disk-shaped weight 19 is mounted on the upper surface of the head body 14. In FIG. 1, reference numeral 19a denotes a through hole formed in the center of the weight 19 for loosely inserting the center pushing shaft 18.
【００２３】次に、この研磨装置１０を用いた第１実施
例のシリコンウェーハＷの研磨方法を説明する。図１，
図２に示すように、まず４枚のシリコンウェーハＷをキ
ャリアプレート１６の裏面に９０度ごとにワックス貼着
する。その後、このキャリアプレート１６は、研磨ヘッ
ド１３のヘッド本体１４の環状フランジ１４ａの下縁面
と、センター押圧治具１７の裏面とに固着される。ま
ず、１次研磨工程での研磨時には、センター押し用シャ
フト１８を用いたセンター押圧治具１７により、おもり
１９による荷重（３１５ｇｆ／ｃｍ２）の中心荷重と外
周荷重とのバランスを外周荷重の方が大きくなるように
して研磨する。その他の研磨条件は、研磨定盤１２の回
転速度３０ｒｐｍ、研磨ヘッド１３の回転速度を３０ｒ
ｐｍとする。研磨液の供給量は１分間当たり７リット
ル、研磨量は５μｍ、研磨時間は６分間である。研磨液
としては、デュポン社製「マジンＳＲＳ１」を用いる。
研磨後には、図３（ａ）に示すように、各シリコンウェ
ーハＷのキャリアプレート１６中心部側に小さなダレａ
が生じる一方、シリコンウェーハＷの中央部からキャリ
アプレート１６外周側の端部にかけて、比較的大きな波
形の凹部ｂが発生する。Next, a method for polishing a silicon wafer W of the first embodiment using the polishing apparatus 10 will be described. Figure 1
As shown in FIG. 2, first, four silicon wafers W are attached to the back surface of the carrier plate 16 by wax every 90 degrees. Thereafter, the carrier plate 16 is fixed to the lower edge surface of the annular flange 14 a of the head body 14 of the polishing head 13 and the back surface of the center pressing jig 17. First, at the time of polishing in the primary polishing step, the center pressing jig 17 using the center pressing shaft 18 determines the balance between the center load and the outer load of the weight 19 (315 gf / cm 2 ) by the outer load. Is polished so as to increase. Other polishing conditions include a rotation speed of the polishing table 12 of 30 rpm and a rotation speed of the polishing head 13 of 30 rpm.
pm. The supply amount of the polishing liquid is 7 liters per minute, the polishing amount is 5 μm, and the polishing time is 6 minutes. As the polishing liquid, "Mazin SRS1" manufactured by DuPont is used.
After the polishing, as shown in FIG. 3A, a small sag is formed on the center side of the carrier plate 16 of each silicon wafer W.
On the other hand, a recess b having a relatively large waveform is generated from the center of the silicon wafer W to the end on the outer peripheral side of the carrier plate 16.
【００２４】次いで、２次研磨工程での研磨時には、１
次研磨工程での研磨装置１０からキャリアプレート１６
を外し、これを２次研磨工程用の研磨装置１０の研磨ヘ
ッド１３の裏面に取り付ける。この２次研磨も同様の方
法で、キャリアプレート１６の中心荷重を、外周荷重に
比べて小さくし、研磨する。総荷重としては２５８ｇｆ
／ｃｍ２である。その他の研磨条件は、研磨定盤１２の
回転速度が３０ｒｐｍ、研磨ヘッド１３の回転速度が３
０ｒｐｍである。研磨液の供給量は１分間当たり７リッ
トル、研磨量は４μｍ、研磨時間は６分間である。研磨
液としては、デュポン社製「マジンＳＲＳ１」を用い
る。研磨後、１次研磨工程後と同じように、大小のダレ
ａ，凹部ｂが残った（図３（ｂ）参照）。Next, at the time of polishing in the secondary polishing step, 1
In the next polishing step, the polishing apparatus 10 moves the carrier plate 16
, And attached to the back surface of the polishing head 13 of the polishing apparatus 10 for the secondary polishing step. In this secondary polishing, the center load of the carrier plate 16 is reduced by a similar method as compared with the outer peripheral load, and polishing is performed. The total load is 258gf
/ Cm 2 . Other polishing conditions are as follows: the rotation speed of the polishing table 12 is 30 rpm, and the rotation speed of the polishing head 13 is 3 rpm.
0 rpm. The supply amount of the polishing liquid is 7 liters per minute, the polishing amount is 4 μm, and the polishing time is 6 minutes. As the polishing liquid, "Mazin SRS1" manufactured by DuPont is used. After polishing, large and small sags a and concave portions b remained in the same manner as after the primary polishing step (see FIG. 3B).
【００２５】次に、３次研磨工程での研磨時は、２次研
磨工程での研磨装置１０からキャリアプレート１６を外
し、これを３次研磨用の研磨ヘッド１３の裏面に取り付
ける。３次研磨のウエイト荷重は２０７ｇｆ／ｃｍ２で
ある。３次研磨では、キャリアプレート１６の中心荷重
を、外周荷重に対して大きくする。その他の研磨条件
は、研磨定盤１２の回転速度が３０ｒｐｍ、研磨ヘッド
１３の回転速度が３０ｒｐｍである。しかも、研磨液の
供給量は１分間当たり７リットル、研磨量は３μｍ、研
磨時間は６分間である。研磨液としては、デュポン社製
「マジンＳＲＳ１」を使用する。この３次研磨により、
１次研磨および２次研磨で生じた大小のダレａ，凹部ｂ
のほとんどが除去される（図３（ｃ）参照）。これによ
り、シリコンウェーハＷの表面が略平坦になる。Next, at the time of polishing in the third polishing step, the carrier plate 16 is removed from the polishing apparatus 10 in the second polishing step, and the carrier plate 16 is attached to the back surface of the polishing head 13 for the third polishing. The weight load for the third polishing is 207 gf / cm 2 . In the third polishing, the center load of the carrier plate 16 is increased with respect to the outer peripheral load. As other polishing conditions, the rotation speed of the polishing table 12 is 30 rpm, and the rotation speed of the polishing head 13 is 30 rpm. Moreover, the supply amount of the polishing liquid is 7 liters per minute, the polishing amount is 3 μm, and the polishing time is 6 minutes. As the polishing liquid, "Mazin SRS1" manufactured by DuPont is used. By this third polishing,
Large and small sags a and recesses b generated by primary polishing and secondary polishing
(See FIG. 3 (c)). Thereby, the surface of the silicon wafer W becomes substantially flat.
【００２６】そして、最後の仕上げ研磨が行われる。こ
の仕上げ研磨時は、３次研磨用の研磨装置１０からキャ
リアプレート１６を外し、これを仕上げ研磨用の研磨装
置１０の研磨ヘッド１３の裏面に取り付ける。この仕上
げ研磨の場合には、キャリアプレート１６の中心荷重
と、外周荷重とを等しくして研磨する。中押し圧の設定
範囲は０〜１ｋｇ／ｃｍ２とする。他の研磨条件として
は、研磨定盤１２の回転速度が３０ｒｐｍ、研磨ヘッド
１３の回転速度が３０ｒｐｍである。研磨液の供給量は
１分間当たり２〜３リットル、研磨量は１μｍ以下、研
磨時間は６分間である（図３（ｄ）参照）。研磨液とし
ては、フジミコーポレーテッド社製「グランゾックス３
９００ＲＳ」を用いる。こうして、４つの研磨工程（仕
上げ研磨工程を含む）を行った後のシリコンウェーハＷ
の表面の平坦度は、ＴＴＶで１．０μｍであった。これ
は、従来の平坦度１．２〜１．４μｍに比べて高い平坦
度である。Then, final polishing is performed. At the time of this final polishing, the carrier plate 16 is removed from the polishing device 10 for tertiary polishing, and the carrier plate 16 is attached to the back surface of the polishing head 13 of the polishing device 10 for final polishing. In the case of this finish polishing, polishing is performed with the center load of the carrier plate 16 equal to the outer peripheral load. The setting range of the intermediate pressing pressure is 0 to 1 kg / cm 2 . As other polishing conditions, the rotation speed of the polishing table 12 is 30 rpm, and the rotation speed of the polishing head 13 is 30 rpm. The supply amount of the polishing liquid is 2 to 3 liters per minute, the polishing amount is 1 μm or less, and the polishing time is 6 minutes (see FIG. 3D). As polishing liquid, "Gran Zox 3" manufactured by Fujimi Corporation
900RS "is used. Thus, the silicon wafer W after performing the four polishing steps (including the final polishing step)
The surface flatness was 1.0 μm in TTV. This is a higher flatness than the conventional flatness of 1.2 to 1.4 μm.
【００２７】次に、図４に基づいて、この発明の第２実
施例に係る高平坦度ウェーハの作製方法を説明する。図
４は、この発明の第２実施例に係る高平坦度ウェーハの
作製方法を用いた各研磨工程の半導体ウェーハの変形を
示す説明図である。第２実施例では、１次研磨用と、２
次研磨用と、仕上げ研磨用との３台の研磨装置１０が用
いられる。１次研磨用の研磨布には第１実施例と同様に
「Ｓｕｂａ９００」または「Ｓｕｂａ８００」が用いら
れ、２次研磨用には第１実施例の３次研磨と同じ「Ｓｕ
ｂａ６００」が用いられる。また、仕上げ研磨用として
は、第１レース株式会社製の「シーガル」が用いられ
る。Next, a method of manufacturing a high flatness wafer according to a second embodiment of the present invention will be described with reference to FIG. FIG. 4 is an explanatory view showing deformation of a semiconductor wafer in each polishing step using the method for manufacturing a high flatness wafer according to the second embodiment of the present invention. In the second embodiment, for the primary polishing,
Three polishing apparatuses 10 for next polishing and for final polishing are used. "Suba900" or "Suba800" is used as the polishing cloth for the primary polishing similarly to the first embodiment, and "Su" which is the same as the tertiary polishing of the first embodiment is used for the secondary polishing.
ba600 ”is used. For final polishing, "Seagull" manufactured by Daiichi Race Co., Ltd. is used.
【００２８】次に、図４に基づいて、この第２実施例の
シリコンウェーハＷの研磨方法を説明する。図４に示す
ように、まず１次研磨時には、センター押し用シャフト
１８を用いることにより、センター押圧治具１７による
中心荷重を、外周荷重に比べて小さくして研磨する。お
もりによる総荷重は２７０ｇ／ｃｍ２である。研磨定盤
１２の回転速度３０ｒｐｍ、研磨ヘッド１３の回転速度
を３０ｒｐｍとする。研磨液の供給量は１分間当たり７
リットル、研磨量は６μｍ、研磨時間は１０分間であ
る。研磨後、各シリコンウェーハＷには上記ダレａ，凹
部ｂが発生する（図４（ａ）参照）。研磨液としては、
デュポン社製「マジンＳＲＳ１」を用いる。Next, a method for polishing the silicon wafer W of the second embodiment will be described with reference to FIG. As shown in FIG. 4, at the time of the first polishing, the center load by the center pressing jig 17 is made smaller than the outer peripheral load by using the center pressing shaft 18 for polishing. The total load due to the weight is 270 g / cm 2 . The rotation speed of the polishing table 12 is 30 rpm, and the rotation speed of the polishing head 13 is 30 rpm. The supply amount of the polishing liquid is 7 per minute.
Liter, the polishing amount is 6 μm, and the polishing time is 10 minutes. After the polishing, the sag a and the recess b occur in each silicon wafer W (see FIG. 4A). As a polishing liquid,
"Mazin SRS1" manufactured by DuPont is used.
【００２９】次いで、２次研磨時には、キャリアプレー
ト１６の中心荷重を、外周荷重に対して大きくして研磨
する。ウェーハへの荷重は２２０ｇ／ｃｍ２である。研
磨定盤１２の回転速度３０ｒｐｍ、研磨ヘッド１３の回
転速度を３０ｒｐｍとする。研磨液の供給量は１分間当
たり７リットル、研磨量は６μｍ、研磨時間は１０分間
である。研磨液としては、デュポン社製「マジンＳＲＳ
１」を用いる。この２次研磨により、１次研磨で発生し
たダレａ，凹部ｂが概略取り除かれる（図４（ｂ）参
照）。その結果、シリコンウェーハＷの表面が略平坦に
なる。Next, at the time of the second polishing, the carrier is polished by setting the center load of the carrier plate 16 larger than the outer peripheral load. The load on the wafer is 220 g / cm 2 . The rotation speed of the polishing table 12 is 30 rpm, and the rotation speed of the polishing head 13 is 30 rpm. The supply amount of the polishing liquid is 7 liters per minute, the polishing amount is 6 μm, and the polishing time is 10 minutes. As a polishing liquid, "Mazin SRS" manufactured by DuPont
1 "is used. By this secondary polishing, the sag a and the concave portion b generated by the primary polishing are substantially removed (see FIG. 4B). As a result, the surface of the silicon wafer W becomes substantially flat.
【００３０】仕上げ研磨時には、キャリアプレート１６
の中心荷重と、外周荷重とを略等しくして研磨する。ウ
ェーハ荷重は１２５ｇ／ｃｍ２である。研磨定盤１２の
回転速度が３０ｒｐｍ、研磨ヘッド１３の回転速度が３
０ｒｐｍ、研磨液の供給量は１分間当たり２〜３リット
ル、研磨量は１μｍ以下、研磨時間は６分間である。
（図４（ｃ）参照）。研磨液としては、フジミ社製「グ
ランゾックス３９００ＲＳ」を用いる。こうして３つの
研磨工程（仕上げ研磨工程を含む）により仕上げられた
シリコンウェーハＷの表面の平坦度は、ＴＴＶで１．０
μｍと高い平坦度であった。その他の構成、作用および
効果は、第１実施例と同様であるので、説明を省略す
る。At the time of finish polishing, the carrier plate 16
The center load and the outer peripheral load are substantially equal to each other. The wafer load is 125 g / cm 2 . The rotation speed of the polishing table 12 is 30 rpm, and the rotation speed of the polishing head 13 is 3
At 0 rpm, the supply amount of the polishing liquid is 2-3 liters per minute, the polishing amount is 1 μm or less, and the polishing time is 6 minutes.
(See FIG. 4 (c)). As the polishing liquid, “Gran Zox 3900RS” manufactured by Fujimi Co., Ltd. is used. The surface flatness of the silicon wafer W finished by the three polishing steps (including the final polishing step) is 1.0 by TTV.
The flatness was as high as μm. Other configurations, operations, and effects are the same as those of the first embodiment, and a description thereof will not be repeated.
【００３１】次に、図５，図６に基づいて、この発明の
第３実施例に係る高平坦度ウェーハの作製方法を説明す
る。図５（ａ）は、この発明の第３実施例に係る研磨布
交換待機前の研磨布および研磨定盤の反りを示す要部拡
大断面図である。図５（ｂ）は、この発明の第３実施例
に係る各研磨工程での研磨バランスがとれた状態で研磨
された半導体ウェーハの概略断面図である。図６（ａ）
は、この発明の第３実施例に係る研磨布交換待機中の研
磨布および研磨定盤を示す要部拡大断面図である。図６
（ｂ）は、この発明の第３実施例に係る各研磨工程での
研磨バランスが崩れた状態で研磨された半導体ウェーハ
の概略断面図である。Next, a method for manufacturing a high flatness wafer according to a third embodiment of the present invention will be described with reference to FIGS. FIG. 5A is an enlarged sectional view of a main part showing warpage of a polishing pad and a polishing platen before a polishing pad replacement standby according to a third embodiment of the present invention. FIG. 5B is a schematic cross-sectional view of a semiconductor wafer polished in a state in which polishing is balanced in each polishing step according to the third embodiment of the present invention. FIG. 6 (a)
FIG. 7 is an enlarged sectional view of a main part showing a polishing pad and a polishing platen according to a third embodiment of the present invention while the polishing pad is being replaced. FIG.
(B) is a schematic sectional view of a semiconductor wafer polished in a state where the polishing balance in each polishing step according to the third embodiment of the present invention is lost.
【００３２】この第３実施例の高平坦度ウェーハの作製
方法は、第１実施例の仕上げ研磨用の研磨定盤１２に展
張された研磨布１１の交換時において、交換されない残
りの３つの研磨定盤１２の表面側に刻設された渦巻き形
のウォータジャケット１２ａに、研磨定盤１２の図示し
ない回転軸内に穿孔された軸水路から冷却水を供給し続
けることで、研磨布１１の張り替え直後におけるシリコ
ンウェーハＷの平坦度の低下を防ぐようにした例であ
る。各研磨段数の研磨工程の研磨定盤１２および研磨布
１１は、各研磨時の研磨熱による熱変形量（定盤の上方
への反り量）を考慮して、最終的に平坦度の高いシリコ
ンウェーハＷが得られるように、それぞれの研磨量の配
分がなされている（図５（ａ），（ｂ）参照）。The method of manufacturing a high flatness wafer according to the third embodiment is similar to that of the first embodiment except that when the polishing cloth 11 spread on the polishing platen 12 for finish polishing is replaced, the remaining three polishing parts which are not replaced are removed. The polishing cloth 11 is replaced by continuously supplying cooling water to a spiral water jacket 12a engraved on the surface side of the surface plate 12 from a shaft water channel formed in a rotating shaft (not shown) of the polishing surface plate 12. This is an example in which a decrease in the flatness of the silicon wafer W immediately after is prevented. The polishing platen 12 and the polishing cloth 11 in the polishing process of each polishing step are made of silicon having a high flatness in consideration of the amount of thermal deformation (the amount of warpage upward of the platen) due to polishing heat at each polishing. The respective polishing amounts are distributed so that the wafer W can be obtained (see FIGS. 5A and 5B).
【００３３】ところで、仕上げ研磨用の研磨布１１を交
換する際には、この仕上げ研磨用の研磨装置１０だけで
なく、残りの研磨装置１０も研磨作業が停止され、各研
磨定盤１２に刻設されたウォータジャケット１２ａへの
冷却水の供給も停止される。このため、各研磨工程にお
いて、前述したように、それまで研磨時の研磨熱による
研磨布１１および研磨定盤１２の熱変形量を考慮して他
の研磨工程の研磨量の配分を行っていたことが無駄とな
る。When the polishing cloth 11 for finish polishing is replaced, not only the polishing apparatus 10 for finish polishing but also the remaining polishing apparatuses 10 are stopped, and the polishing work is stopped. The supply of the cooling water to the provided water jacket 12a is also stopped. For this reason, in each polishing step, as described above, the amount of polishing in the other polishing steps is distributed in consideration of the amount of thermal deformation of the polishing pad 11 and the polishing platen 12 due to the polishing heat during polishing. Is wasted.
【００３４】すなわち、残りの研磨定盤１２への冷却水
（例えば１７±３℃）の供給を中断すると研磨定盤１２
の温度が上昇し、研磨布１１および研磨定盤１２の反り
が減少する（図６（ａ）参照）。このため、研磨布交換
の直後において、当該研磨段数の研磨工程での、シリコ
ンウェーハＷのキャリアプレート１６中心部側とその外
周部側との研磨量が、研磨布１１を交換する前と異な
る。その結果、その後しばらくの間は、研磨工程全体に
わたる研磨量のバランスがくずれて、シリコンウェーハ
Ｗが、このプレート中心部側より外周部側が薄いテーパ
状になる（図６（ｂ）参照）。このため、平坦度の高い
シリコンウェーハＷが得られないおそれがあった。That is, when the supply of cooling water (for example, 17 ± 3 ° C.) to the remaining polishing table 12 is interrupted, the polishing table 12
, The warp of the polishing pad 11 and the polishing platen 12 decreases (see FIG. 6A). Therefore, immediately after the replacement of the polishing pad, the polishing amount of the center portion of the carrier plate 16 of the silicon wafer W and the outer peripheral portion thereof in the polishing step of the polishing step number is different from that before the replacement of the polishing pad 11. As a result, for a while thereafter, the balance of the polishing amount over the entire polishing process is lost, and the silicon wafer W becomes tapered at the outer peripheral side thinner than the central part of the plate (see FIG. 6B). For this reason, there was a possibility that a silicon wafer W with high flatness could not be obtained.
【００３５】第３実施例の高平坦度ウェーハの作製方法
は、この問題を解決するものである。すなわち、仕上げ
研磨工程での研磨布の交換時にも、他の研磨段数の研磨
工程に配備された研磨定盤１２への冷却水の供給を継続
したままとする。その結果、使用される冷却水の熱（水
温１７℃）により、研磨布が交換されない研磨工程に配
備された研磨布１１および研磨定盤１２が保温され、よ
って両部材１１，１２の熱変形による反りの低下が抑え
られる。このため、張り替え直後のしばらくの間、シリ
コンウェーハＷの平坦度が低下する現象を防ぐことがで
きる。換言すると、この反り状態を維持するには、研磨
定盤にあって冷却水通路の位置が定盤表面側か否かに拘
わらず、定盤表面側を高温にその裏面側を低温にという
研磨時と同じ温度勾配を維持することが重要である。The method of manufacturing a high flatness wafer according to the third embodiment solves this problem. That is, even when the polishing cloth is replaced in the finishing polishing step, the supply of the cooling water to the polishing platen 12 provided in the polishing steps of the other polishing steps is maintained. As a result, the heat of the cooling water used (water temperature 17 ° C.) keeps the temperature of the polishing pad 11 and the polishing platen 12 provided in the polishing step in which the polishing pad is not replaced, so that both members 11 and 12 are thermally deformed. The reduction in warpage can be suppressed. For this reason, it is possible to prevent a phenomenon in which the flatness of the silicon wafer W decreases for a while immediately after the replacement. In other words, in order to maintain this warped state, regardless of whether the position of the cooling water passage in the polishing platen is on the platen surface side or not, the polishing is performed such that the platen surface side is at a high temperature and the back surface side is at a low temperature. It is important that the same temperature gradient be maintained.
【００３６】[0036]
【発明の効果】この発明によれば、仕上げ研磨工程の直
前の研磨工程より前の研磨工程での研磨圧力を、キャリ
アプレートの中心部よりその外周部の方を大きくし、仕
上げ研磨工程の直前の研磨工程の研磨圧力は、このプレ
ートの中心荷重をその外周荷重よりも大きくし、また仕
上げ研磨工程では、この中心荷重と外周荷重とを略等し
くしたので、半導体ウェーハの平坦度を高めることがで
きる。According to the present invention, the polishing pressure in the polishing step before the polishing step immediately before the final polishing step is made larger at the outer peripheral portion than at the central portion of the carrier plate, and the polishing pressure is increased immediately before the final polishing step. The polishing pressure in the polishing step is such that the center load of the plate is larger than its outer peripheral load, and in the finish polishing step, the center load and the outer peripheral load are substantially equal, so that the flatness of the semiconductor wafer can be increased. it can.
【００３７】また、この請求項４および請求項５の発明
によれば、特定の研磨装置の研磨布の交換時にも、交換
されない残りの研磨定盤に冷却水を供給しながら行うよ
うにしたので、研磨布の張り替え直後における半導体ウ
ェーハの平坦度の低下を防ぐことができる。According to the fourth and fifth aspects of the present invention, when the polishing cloth of a specific polishing apparatus is replaced, the polishing is performed while supplying cooling water to the remaining polishing table which is not replaced. In addition, it is possible to prevent a decrease in the flatness of the semiconductor wafer immediately after the replacement of the polishing cloth.
【図１】この発明の第１実施例に係る高平坦度ウェーハ
の作製方法を用いたウェーハ研磨中の研磨ヘッド部分の
拡大断面図である。FIG. 1 is an enlarged sectional view of a polishing head portion during wafer polishing using a method for producing a high flatness wafer according to a first embodiment of the present invention.
【図２】この発明の第１実施例に係るウェーハ研磨中の
研磨ヘッドの底面図である。FIG. 2 is a bottom view of the polishing head during wafer polishing according to the first embodiment of the present invention.
【図３】この発明の第１実施例に係る各研磨工程の半導
体ウェーハの変形を示す説明図である。FIG. 3 is an explanatory view showing a deformation of the semiconductor wafer in each polishing step according to the first embodiment of the present invention.
【図４】この発明の第２実施例に係る高平坦度ウェーハ
の作製方法を用いた各研磨工程の半導体ウェーハの変形
を示す説明図である。FIG. 4 is an explanatory view showing deformation of a semiconductor wafer in each polishing step using the method for manufacturing a high flatness wafer according to the second embodiment of the present invention.
【図５】（ａ）はこの発明の第３実施例に係る研磨布交
換待機前の研磨布および研磨定盤の反りを示す要部拡大
断面図である。（ｂ）はこの発明の第３実施例に係る各
研磨工程での研磨バランスがとれた状態で研磨された半
導体ウェーハの概略断面図である。FIG. 5A is an enlarged sectional view of a main part showing warpage of a polishing pad and a polishing platen before a polishing pad replacement standby according to a third embodiment of the present invention. (B) is a schematic cross-sectional view of a semiconductor wafer polished in a state in which polishing is balanced in each polishing step according to the third embodiment of the present invention.
【図６】（ａ）はこの発明の第３実施例に係る研磨布交
換待機中の研磨布および研磨定盤を示す要部拡大断面図
である。（ｂ）はこの発明の第３実施例に係る各研磨工
程での研磨バランスが崩れた状態で研磨された半導体ウ
ェーハの概略断面図である。FIG. 6 (a) is an enlarged sectional view of a main part showing a polishing pad and a polishing platen according to a third embodiment of the present invention while the polishing pad is being replaced. (B) is a schematic sectional view of a semiconductor wafer polished in a state where the polishing balance in each polishing step according to the third embodiment of the present invention is lost.
【図７】従来手段に係る研磨ヘッドの底面図である。FIG. 7 is a bottom view of a polishing head according to a conventional means.
【図８】従来手段に係る研磨後のシリコンウェーハの断
面形状を示す模式図である。FIG. 8 is a schematic view showing a cross-sectional shape of a polished silicon wafer according to a conventional means.
１０ 半導体ウェーハの研磨装置、 １１ 研磨布、 １２ 研磨定盤、 １２ａ ウォータジャケット、 １３ 研磨ヘッド、 １６ キャリアプレート、 Ｗ 半導体ウェーハ（シリコンウェーハ）、 ａ ダレ、 ｂ 凹部。 Reference Signs List 10 semiconductor wafer polishing apparatus, 11 polishing cloth, 12 polishing platen, 12a water jacket, 13 polishing head, 16 carrier plate, W semiconductor wafer (silicon wafer), a drip, b recess.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 ▲高崎▼ 義浩 東京都千代田区大手町１丁目５番１号 三 菱マテリアルシリコン株式会社内 (72)発明者 森田 悦郎 東京都千代田区大手町１丁目５番１号 三 菱マテリアルシリコン株式会社内 Ｆターム(参考） 3C058 AA07 AA12 AB08 AC04 CB01 DA17 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor ▲ Takasaki ▼ Yoshihiro 1-5-1, Otemachi, Chiyoda-ku, Tokyo Within Mitsubishi Materials Silicon Co., Ltd. (72) Inventor Etsuro Morita 1-chome, Otemachi, Chiyoda-ku, Tokyo No. 5-1 F-term in Mitsubishi Materials Silicon Corporation (reference) 3C058 AA07 AA12 AB08 AC04 CB01 DA17
Claims (5)
砥粒を含む研磨液を供給しながら、キャリアプレートに
ワックスで貼着された複数枚の半導体ウェーハの表面
を、所定の研磨圧力でもって上記研磨布の研磨作用面に
押しつけることにより研磨する研磨段階を含む高平坦度
ウェーハの作製方法において、 上記研磨段階が、１次研磨工程、仕上げ研磨工程を含む
３つ以上の研磨段数で構成され、 上記仕上げ研磨工程の直前の研磨工程より前の研磨工程
での研磨圧力は、上記キャリアプレートの中心部よりそ
の外周部の方を大きくし、 上記仕上げ研磨工程の直前の研磨工程の研磨圧力は、こ
れとは反対に、上記キャリアプレートの中心部の方をそ
の外周部より大きくし、 上記仕上げ研磨工程では、上記キャリアプレートの中心
部と外周部との研磨圧力を同等にした高平坦度ウェーハ
の作製方法。1. A method for polishing a surface of a plurality of semiconductor wafers bonded to a carrier plate with wax while supplying a polishing liquid containing polishing abrasive grains to a polishing cloth spread on a polishing platen. In a method for producing a high flatness wafer including a polishing step of polishing by pressing against a polishing action surface of the polishing cloth with pressure, the polishing step includes a primary polishing step and a final polishing step. The polishing pressure in the polishing step prior to the polishing step immediately before the final polishing step is larger at the outer periphery than at the center of the carrier plate, and the polishing pressure in the polishing step immediately before the final polishing step is The polishing pressure, on the contrary, makes the center of the carrier plate larger than its outer periphery, and in the finish polishing step, the center and outer periphery of the carrier plate are The method for manufacturing a high flatness wafer where the polishing pressure equal.
磨工程、３次研磨工程および上記仕上げ研磨工程により
構成され、 １次研磨工程での研磨時および２次研磨工程での研磨時
は、上記キャリアプレートの中心部の研磨圧力よりその
外周部の研磨圧力を大きくし、 これとは反対に、３次研磨時には、上記キャリアプレー
トの中心部の研磨圧力をその外周部の研磨圧力より大き
くした請求項１に記載の高平坦度ウェーハの作製方法。2. The polishing step comprises a primary polishing step, a secondary polishing step, a third polishing step, and a finish polishing step, wherein at the time of polishing at the primary polishing step and at the time of polishing at the secondary polishing step. Makes the polishing pressure at the outer peripheral portion larger than the polishing pressure at the central portion of the carrier plate. Conversely, during the third polishing, the polishing pressure at the central portion of the carrier plate is made larger than the polishing pressure at the outer peripheral portion. The method for producing a high flatness wafer according to claim 1, wherein the size is increased.
研磨工程と、上記仕上げ研磨工程とで構成され、 １次研磨工程での研磨時は、上記キャリアプレートの外
周部の研磨圧力を中心部のそれより大きくし、 これとは反対に、２次研磨工程での研磨時は、上記キャ
リアプレートの中心部の研磨圧力をその外周部の研磨圧
力より大きくした請求項１に記載の高平坦度ウェーハの
作製方法。3. The polishing step comprises a primary polishing step, a secondary polishing step, and the finish polishing step. In the polishing in the primary polishing step, a polishing pressure on an outer peripheral portion of the carrier plate is provided. The polishing pressure in the center portion of the carrier plate is set to be larger than that in the outer peripheral portion during polishing in the secondary polishing step. Manufacturing method of high flatness wafer.
を流しながら、半導体ウェーハの表面を研磨するととも
に、 特定の研磨工程で研磨定盤の研磨布を交換するとき、交
換しない研磨定盤への冷却水の供給を制御することによ
り、その研磨定盤の温度を一定に保持する請求項１〜請
求項３のうちのいずれか１項に記載の高平坦度ウェーハ
の作製方法。4. In each of the polishing steps, the surface of the semiconductor wafer is polished while cooling water is supplied to the polishing table, and when a polishing cloth of the polishing table is replaced in a specific polishing step, the polishing table is not replaced. The method for producing a high flatness wafer according to any one of claims 1 to 3, wherein the temperature of the polishing platen is kept constant by controlling the supply of cooling water to the plate.
上げ研磨用の研磨定盤である請求項４に記載の高平坦度
ウェーハの作製方法。5. The method for producing a high flatness wafer according to claim 4, wherein the polishing platen on which the polishing cloth is replaced is a polishing platen for finish polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9264299A JP3680624B2 (en) | 1999-03-31 | 1999-03-31 | High flatness wafer fabrication method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9264299A JP3680624B2 (en) | 1999-03-31 | 1999-03-31 | High flatness wafer fabrication method |
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| Publication Number | Publication Date |
|---|---|
| JP2000288909A true JP2000288909A (en) | 2000-10-17 |
| JP3680624B2 JP3680624B2 (en) | 2005-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP9264299A Expired - Lifetime JP3680624B2 (en) | 1999-03-31 | 1999-03-31 | High flatness wafer fabrication method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112010002227T5 (en) | 2009-06-05 | 2012-06-28 | Sumco Corp. | METHOD OF POLISHING A SILICON WAFERS SOWIESILICIUM WAFER |
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1999
- 1999-03-31 JP JP9264299A patent/JP3680624B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112010002227T5 (en) | 2009-06-05 | 2012-06-28 | Sumco Corp. | METHOD OF POLISHING A SILICON WAFERS SOWIESILICIUM WAFER |
| US8877643B2 (en) | 2009-06-05 | 2014-11-04 | Sumco Corporation | Method of polishing a silicon wafer |
| DE112010002227B4 (en) | 2009-06-05 | 2018-11-29 | Sumco Corp. | Method for polishing a silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3680624B2 (en) | 2005-08-10 |
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